TWI271765B - Field emission device - Google Patents

Abstract

The present invention provides a field-emission device employing carbon nanotubes. The device includes a cathode, a carbon nanotube array, the carbon nanotube array prepared by the chemical vapor deposition method has a top surface and a bottom portion. The top surface of the carbon nanotube array is electrically conductively connected with the cathode, and the bottom portion of the array is provided for emitting electrons. The nanotubes of the bottom of the carbon nanotube array are orderly arranged and aligned, and terminate at a common plane, accordingly, an improved field emission performance is desirably achieved.

Description

1271765 ta.J21〇7714__年月日 修正 五、發明說明（1) 【發明所屬之技術領域】 本發明係關於一種場發射元件，尤指一種利用奈米碳 管之場發射元件。 【先前技術】 奈米碳管以其優良之導電性能、完美之晶格結構、奈 米尺度之失端等特性成為優良之場發射陰極材料，具體參 見Walt A· de Heer 等人在Science 270，1179-1180 (1995)’ A Carbon Nanotube Field-Emission Electron1271765 ta.J21〇7714__年月日日 Revision 5. Invention Description (1) Technical Field The present invention relates to a field emission element, and more particularly to a field emission element using a carbon nanotube. [Prior Art] The carbon nanotubes have become excellent field emission cathode materials due to their excellent electrical conductivity, perfect lattice structure, and nanometer-scale misalignment. For details, see Walt A·de Heer et al. in Science 270. 1179-1180 (1995)' A Carbon Nanotube Field-Emission Electron

Source —文。先前由美國專利第6, 232，、7〇6號揭示一種利 用奈米碳管場發射元件，該場發射元件包括一基板，沈積 於基板上之催化劑，以及從催化劑上長出一束或多束相互 平行且垂直於基底之奈米破管陣列。 奈米碳管之場發射特性在場發射平面顯示器件、電真 空器件、大功率微波器件等領域具有廣闊之應用前景。 200 1年3月7日公開之中國專利"利用奈米碳管之場發射顯 示裝置及其製造方法"，其申請號為〇〇12114〇，該專利揭 不利用奈米碳管作為場發射顯示中電子發射源，請參閱第 圖’在該專利中，奈米碳管9〇用作發射尖端，其通過超 聲振動’外加電壓等方法噴射進細孔8 〇，故，無法確保該 奈米碳管9 0之高度及其頂部之平整性。 化學氣相沈積法（CVD)易於矽片、玻璃等基板上生長 出位置、取向、高度均確定之奈米碳管陣列，具體參見范 守善等人 Science 283， 51 2 - 51 4 ( 1 999)，Self-orienUd Regular Arrays of Carbon Nanotubes and Their FieldSource - text. U.S. Patent No. 6,232,7,6, the disclosure of which is incorporated herein incorporated by reference in its entirety, in its entirety, in its entirety, in its entirety, in its entirety, in its entirety, it is incorporated herein by reference. The bundles of nanotubes are parallel to each other and perpendicular to the substrate. The field emission characteristics of carbon nanotubes have broad application prospects in fields such as field emission planar display devices, electrical vacuum devices, and high-power microwave devices. The Chinese patent published on March 7, 2001, "the field emission display device using nano carbon tube and its manufacturing method", the application number is 〇〇12114〇, the patent discloses that the carbon nanotube is not used as the field. In the emission display electron emission source, please refer to the figure 'In this patent, the carbon nanotube 9〇 is used as the emission tip, which is injected into the pores 8 by ultrasonic vibration 'applied voltage, etc., so the nevus cannot be ensured. The height of the carbon tube 90 and the flatness of the top. Chemical vapor deposition (CVD) is easy to grow carbon nanotube arrays with position, orientation and height on the substrate such as enamel and glass. For details, see Fan Shoushan et al. Science 283, 51 2 - 51 4 (1 999). Self-orienUd Regular Arrays of Carbon Nanotubes and Their Field

f on F^pert les —文，點陣之尺寸可 光刻工藝控制催化劑薄膣 、k干^r to _%£；__ ®皇刹楚a 達到很高之製造精度。先前，美 ° , ^ 揭示—種利用薄膜電晶體（TF Τ)來栌 制奈米碳管電子發射之場發射顯示器。體⑴1)來控 優化奈米碳管陣列之JP ,e ^ 社槎 ^ ^ ^ 之千面场發射性能必須採用三級型 結構：：該結構中為達到電子發射之均句隱，作為陰極： 奈米奴官陣列需要在大面積上確保微米量； 然，㈣生長工藝要達到大面積均勾相當困難 所示之奈米碳管陣列掃描顯微（SEM)肖片顯示 破 =:;7ί奈米碳管頂部均有彎#，同-束内奈米碳 官之頂部也相h平整’ a該頂部表面夾雜有少量雜 佈之催化劑顆粒及無定形碳等雜質，這些因素之存在將 致場發射性能之不穩定及不均勻，影響奈米碳管陣列之 發射性能。 有鑑於此，提供一種發射端奈米碳管陣列表面平整之 奈米碳管場發射元件實為必要。 【發明内容】 本發明之目的在於提供一 平整之奈米破管場發射元件。 種發射端奈米碳管陣列表面 為實現上述發明目的，本發明採用之技術方案係提供 一種奈米碳管場發射元件，其包括一陰極，一奈米碳管陣 列’該奈米碳管陣列由CVD法製備而成且包括一頂部及一 生長根部，其中該陰極與該奈米碳管陣列頂部電連接、該 生長根部為場發射之電子發射端。 人 1271765 __一案號92107714 年月日 修正_ 五、發明說明（3) 與先前技術中奈米碳管場發射元件之發射端表面參差 不齊相比’本發明提供之場發射元件於大面積上保持奈米 碳管陣列發射端端部平整且其高度在微米量級可控，極大 降低奈米碳管場發射元件電子發射之不均勻性，提高場發 射元件之場發射性能。 【實施方式】 請參閱第六圖：本發明所揭示之場發射元件包括一陰 極50 ’ 一奈来碳管陣列4〇，該奈米碳管陣列4〇 *CVD法製 備而成，其包括一頂部42及一生長根部44，該頂部42植入f on F^pert les — text, the size of the dot matrix can be controlled by photolithography process catalyst thin, k dry ^ r to _% £; __ ® 皇 楚 a 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到Previously, the United States °, ^ revealed a field emission display using a thin film transistor (TF Τ) to suppress the electron emission of carbon nanotubes. Body (1) 1) to control the optimization of the carbon nanotube array of JP, e ^ 槎 ^ ^ ^ Thousand-face field emission performance must adopt a three-stage structure:: In this structure, to achieve the electron emission of the uniform sentence, as the cathode: The nano slave array needs to ensure the micron amount on a large area; however, (4) the growth process to reach a large area is quite difficult. The carbon nanotube array scanning microscopy (SEM) shows the broken film::; The top of the carbon tube has a bend #, and the top of the same-beam nano-carbon official is also flat. ' The top surface is mixed with a small amount of catalyst particles and amorphous carbon, etc., and these factors will be present. The instability and unevenness of the emission performance affect the emission performance of the carbon nanotube array. In view of this, it is necessary to provide a carbon nanotube field emission element having a flat surface on the surface of the emitter carbon nanotube array. SUMMARY OF THE INVENTION It is an object of the present invention to provide a flat nano tube field emission element. In order to achieve the above object, the technical solution adopted by the present invention provides a carbon nanotube field emission element comprising a cathode, a carbon nanotube array 'the carbon nanotube array Prepared by CVD and comprising a top portion and a growth root, wherein the cathode is electrically connected to the top of the carbon nanotube array, and the growth root is a field emission electron emission end. Person 1271765 __ a case number 92107714 year and month correction _ five, invention description (3) compared with the prior art nano-carbon nanotube field emission element surface unevenness The emission end of the carbon nanotube array is flat on the surface and its height is controllable on the order of micrometer, which greatly reduces the non-uniformity of electron emission of the carbon nanotube field emission element and improves the field emission performance of the field emission element. [Embodiment] Please refer to the sixth figure: the field emission device disclosed in the present invention comprises a cathode 50'-carbon nanotube array 4〇, which is prepared by a 4〇*CVD method, which includes a Top 42 and a growing root 44, the top 42 is implanted

陰極與該陰極50形成電連接，該平整、整潔、有序之 奈米碳官陣列40之生長根部44作為場發射之電子發射端裸 露0 本發明由以下步驟製備而成。 ^驟1，請參閱第-圖，首先提供一工作模板1〇，該 工作梹板1 0帶微小氣孔丨2，該微小氣孔i 2可確保後續工藝 中工作模板10易脫附。該工作模板1〇表面平整度 ;米：：：其材料要求耐受700 °c左右奈米碳管生長溫 又本灵施方式選用多孔矽作為工作模板1 〇。 步驟2 ’ 4參閱第二圖，於工作模板J 〇上製作一絕緣 隔離體2 0，本實施方式採用供瞄 ' 之絕緣隔雜雜90，坊π用鍍膜方式製作厚度為20 〇微米 匕啄h離體20製作方法除鍍膜方式 外、還可採用印刷或直接搡用筠土、十π淡—t ^ ^ ^ ^ ^ ai ^ ^ ^ 刼用現成之絶緣溥板，採用現成 、，巴緣涛板則而要其面向工作模板1 〇 一面之 米以下。此絕緣隔離體2 〇 厘 又在1破 要而定， 之厚度根據奈未碳管陣列生長需The cathode is electrically connected to the cathode 50, and the growth root of the flat, clean, ordered nanocarbon array 40 is exposed as the electron emission end of the field emission. The present invention is prepared by the following steps. ^1, please refer to the first figure. First, a working template 1 is provided. The working raft 10 has a small air hole 丨2, which ensures that the working template 10 is easily detached in the subsequent process. The working template has a flat surface roughness; m::: its material is required to withstand the growth temperature of the carbon nanotubes around 700 °c, and the porous method is used as the working template 1 〇. Step 2 ' 4 Referring to the second figure, an insulating spacer 20 is formed on the working template J ,. In this embodiment, the insulating spacer 90 for the aiming is used, and the thickness of the π is coated by a coating method of 20 〇 micron. h In vitro 20 production method In addition to the coating method, it can also be printed or directly used in bauxite, ten π light-t ^ ^ ^ ^ ^ ai ^ ^ ^ 现 using ready-made insulating raft, using ready-made, slab The board is supposed to face the working template 1 below the side of the meter. The insulating spacer 2 〇 厘 is also determined by the thickness of 1

第8頁 1271765Page 8 1271765

月 五、發明說明（4) 曰 修正 其厚f範圍可為5微米〜10毫米，優選厚度範圍為10〜50 0微 米。$緣隔離體20之材料應能夠耐受70 0。C左右奈米碳管 生長/m度可彳文下列材料中選取：耐溫玻璃、塗敷絕緣層 之金屬、矽、氧化矽、陶瓷或雲母。該絕緣隔離體20之作 用係^供奈米碳管生長之空間。 步驟3，請參閱第三圖，通過電子束蒸鍍法於工作模 板10上沈積一催化劑層30，沈積厚度為5奈米，一般要求 催化劑層沈積厚度為卜丨0奈米，優選厚度為4〜6奈米。其 沈積方式除電子束蒸鍍法之外還可採用熱蒸鍍或者濺鍍 法’催化劑材料可為Fe、C〇、Ni等過渡元素金屬或其合 金，本實施方式選用Fe為催化劑。 步驟4 ’請參閱第四圖，將第三圖所示之催化劑層3 〇 於200。C〜4 0 0。C之高溫下退火，使催化劑氧化、收縮成奈 米級催化劑顆粒（圖未示），再將工作模板丨〇置於反應爐 (圖未不）中’於保護氣體氬氣存在下，通入碳源氣乙炔， 2用CVD法，於6 〇〇〜7〇〇。c溫度下生長奈米碳管陣列4〇。通 常所生長奈米碳管陣列4〇之生長根部44之端面（圖未示）與 絕緣隔離體20之上表面22基本位於同一平面。本實施方式 中所生長之奈米碳管陣列4 〇之頂部4 2略高於絕緣隔離體2 〇 之上表面22 〇 步驟5 ’請參閱第五圖，該奈米碳管陣列4 〇之頂部4 2 平整度低、雜亂無序。於該頂部42沈積陰極50，沈積方法 可採用電子束蒸鍍法、熱蒸鍍法或濺鍍法等。該陰極5 〇與 系巴緣隔離體2〇之上表面22相連接。陰極50之材料可選用任 何Month 5, Invention Description (4) 修正 Correction The thickness f can range from 5 μm to 10 mm, preferably from 10 to 50 μm. The material of the edge separator 20 should be able to withstand 70 0. The growth/m degrees of the C carbon nanotubes can be selected from the following materials: temperature resistant glass, metal coated with insulating layer, tantalum, niobium oxide, ceramic or mica. The function of the insulating spacer 20 is to provide a space for the carbon nanotube to grow. Step 3, referring to the third figure, a catalyst layer 30 is deposited on the working template 10 by electron beam evaporation, and the deposition thickness is 5 nm. Generally, the deposition thickness of the catalyst layer is required to be 0 nm, preferably 4 ~ 6 nm. The deposition method may be carried out by hot evaporation or sputtering in addition to the electron beam evaporation method. The catalyst material may be a transition element metal such as Fe, C〇 or Ni or an alloy thereof. In the present embodiment, Fe is used as a catalyst. Step 4 ‘Please refer to the fourth figure, and the catalyst layer 3 shown in the third figure is at 200. C~4 0 0. Annealing at a high temperature of C, oxidizing and shrinking the catalyst into nanometer-sized catalyst particles (not shown), and then placing the working template in a reaction furnace (not shown) in the presence of protective gas argon. Carbon source gas acetylene, 2 by CVD method, at 6 〇〇~7〇〇. The carbon nanotube array 4〇 was grown at a temperature of c. The end faces (not shown) of the growing root portion 44 of the normally grown carbon nanotube array 4 are substantially coplanar with the upper surface 22 of the insulating spacer 20. The top 4 2 of the carbon nanotube array 4 grown in the present embodiment is slightly higher than the upper surface 22 of the insulating separator 2 〇 Step 5 'Please refer to the fifth figure, the top of the carbon nanotube array 4 4 2 Low level of flatness and disorder. The cathode 50 is deposited on the top portion 42, and the deposition method may be electron beam evaporation, thermal evaporation or sputtering. The cathode 5 is connected to the upper surface 22 of the rim spacer 2 。. The material of the cathode 50 can be selected from any of the materials

第9頁 1271765 案號 92107714 年 月 曰 修正 五、發明說明（5广 ^ - 金屬或合金。本實施方式採用電子束蒸鍍法沈積金屬銅作 為陰極50 ’直至奈米碳管陣列4〇之頂部42完全被銅覆蓋。 步驟6，請參閱第六圖，將第五圖所示之結構翻轉， 並將工作模板1 0去除，使奈米碳管陣列4 0之生長根部4 4完 全裸露，再通過物理方式或化學方式將奈米碳管陣列4 〇之 生長根部44枯有之催化劑顆粒鐵去除，得到一平整、整 潔、有序之奈米碳管生長根部44，其平整性與工作模板j 〇 之表面一致，平整度在1微米以下。該生長根部44作為場 發射之電子發射端，具有優良之均勻性，且其均為開口。 請參閱第七圖，於絕緣隔離體2 〇與陰極相對之表面 (圖未示）沈積一栅極60，該柵極60之沈積方式可採用電子 束蒸鍍法、熱蒸鍍法或濺鍍法等方式，其材料與陰極5〇之 要求相同，可選用任何金屬或合金。本實施方式選用電子 束4錢沈積金屬銅製備柵極。 一 本發明利用奈米碳管陣列40之生長根部44作為場發射 元件之電子發射端，相較先前場發射元件之奈米碳管陣列 4 〇之頂部4 2作為場發射之電子發射端，奈米碳管陣列之生 長根部44相較頂部42更為平整、整潔、有序，可極大改善 奈米碳管陣列頂部42發射電子之不穩定性及不均勻性。 綜上所述，本發明確已符合發明專利要件，爰依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施例， 牛凡熟悉本案技藝之人士，於援依本案發明精神所作之等 效修飾或變化，皆應包含於以下之申請專利範圍内。Page 9 1271765 Case No. 92107714 Rev. 5, invention description (5 Guang ^ - metal or alloy. This embodiment uses electron beam evaporation to deposit metal copper as cathode 50 ' until the top of the carbon nanotube array 4 42 is completely covered by copper. Step 6, please refer to the sixth figure, flip the structure shown in the fifth figure, and remove the working template 10, so that the growth root 4 4 of the carbon nanotube array 40 is completely exposed, and then Physically or chemically removing the catalyst particle iron from the growing root portion 44 of the carbon nanotube array 4 to obtain a flat, clean, ordered carbon nanotube growth root 44, and its flatness and working template The surface of the crucible is uniform, and the flatness is below 1 micrometer. The growth root portion 44 serves as an electron emission end of the field emission, and has excellent uniformity, and both of them are openings. Please refer to the seventh figure, in the insulating separator 2, the cathode and the cathode. A gate electrode 60 is deposited on the surface (not shown). The gate electrode 60 can be deposited by electron beam evaporation, thermal evaporation or sputtering, and the material is the same as that of the cathode. Optional The metal or alloy is used in the present embodiment. The present invention uses the electron beam 4 to deposit metal copper to prepare the gate. The invention utilizes the growth root 44 of the carbon nanotube array 40 as the electron emission end of the field emission element, compared with the previous field emission element. The top 4 of the carbon nanotube array 4 is used as the electron emission end of the field emission, and the growth root 44 of the carbon nanotube array is more flat, neat and orderly than the top 42, which can greatly improve the top of the carbon nanotube array. 42 The instability and non-uniformity of the emitted electrons. In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above is only a preferred embodiment of the present invention, Niu Fan Equivalent modifications or variations made by the person skilled in the art in the present invention should be included in the scope of the following patent application.

第10頁 1271765 案號 92107714 曰 修正 圖式簡單說明 第一圖係本發明多孔工作模 第二圖 第三圖 第四圖 第五圖 第六圖 第七圖 上製作一 上沈積一 上長出奈 陣列之頂 掉工作模 示場發射 係工作模板 係工作模板 係催化劑層 係奈米碳管 係第五圖去 係第六圖所 極之示意圖。 第八圖係先前之場發射顯示 第九圖係奈米碳管陣列之顯 主要元件符號說明】 板之示意圖。 絕緣隔離體之示意圖。 催化劑層之示意圖。 米碳管陣列之示意圖。 部沈積有陰極之示意圖。 板後之場發射元件示意圖。 元件之絕緣隔離體上沈積柵 裝置示意、.圖。 微照片。 工作模板 10 微小氣孔 12 絕緣隔離體 20 絕緣隔離體上表面 22 催化劑層 30 奈米碳管陣列 40 頂部 42 生長根部 44 陰極 50 拇極 60 第11頁Page 10 1271765 Case No. 92107714 曰Revision Diagram Simple Description The first diagram is the porous working mode of the present invention, the second figure, the third figure, the fourth figure, the fifth figure, the sixth figure, the seventh figure, the seventh figure, the upper one, the upper one, the upper one. The top of the array is the working mode. The field emission system is the working template. The working template is the catalyst layer. The fifth figure of the carbon nanotube system is the schematic diagram of the sixth figure. The eighth picture shows the previous field emission display. The ninth picture shows the main components of the carbon nanotube array. Schematic diagram of an insulating spacer. Schematic diagram of the catalyst layer. Schematic diagram of a carbon nanotube array. A schematic diagram of the cathode is deposited. Schematic diagram of the field emission elements behind the board. A device for depositing a gate on an insulating spacer of a component is shown. Micro photo. Working template 10 Micropores 12 Insulation separator 20 Insulation separator upper surface 22 Catalyst layer 30 Carbon nanotube array 40 Top 42 Growing root 44 Cathode 50 Thumb electrode 60 Page 11

Claims (1)

1271765 92107714 ' i申4專利範圍 種場發射元件，其包括： 一 及 月 曰 修正 陰極，及 ，奈米碳管陣列，該奈米破管陣列由化學氣相沈積法 製備而成，其包括一頂部及一生長根部， 其中該奈米碳管陣列頂部與該陰極電連接，該生長根 作為場發射之電子發射踹。 2 ·如申請專利範圍第1項所述之場發射元件，其中 該奈米碳管陣列之生長根部平整度在1微米以下。 3·如申請專利範圍第1項所述之場發射元件，其中 該場發射元件進一步包括，絕緣隔離體，該絕緣隔離 體之一表面與該陰極相連。 4 ·如申請專利範圍第3,項所述之場發射元件，其中 該絕緣隔離體之製作方法包括鍍膜、印刷。 5 ·如申請專利範圍第3項所述之場發射元件，其中 該絕緣隔離體直接採用現成絕緣薄板。 6 ·如申請專利範圍第3項所述之場發射元件，其中 該絕緣隔離體厚度為5微米〜1 0毫米。 7·如申請專利範圍第3項所述之場發射元件，其中1271765 92107714 'I claim 4 patent range field emission element, comprising: a first and a later modified cathode, and a carbon nanotube array, the nano tube array is prepared by chemical vapor deposition, which comprises a a top portion and a growth root, wherein the top of the carbon nanotube array is electrically connected to the cathode, and the growth root acts as a field emission electron emission enthalpy. 2. The field emission element of claim 1, wherein the carbon nanotube array has a growth root flatness of less than 1 micron. 3. The field emission element of claim 1, wherein the field emission element further comprises an insulating spacer, a surface of the insulating spacer being connected to the cathode. 4. The field emission device of claim 3, wherein the method of fabricating the insulating spacer comprises coating and printing. 5. The field emission element of claim 3, wherein the insulating spacer directly uses a ready-made insulating sheet. 6. The field emission element of claim 3, wherein the insulating spacer has a thickness of 5 micrometers to 10 millimeters. 7. The field emission element as described in claim 3, wherein 第12 !12th! 1271765 隸 921077“ 六、 申請專利範圍 年 月 曰 修正 該絶緣隔離體厚度範圍為1 0〜5 0 0微米。 8·如申請專利範圍第3項所述之場發射元件，其中 該生長根^之端面與該絕緣隔離體靠近該陰極之表面 基本位於同一平面。 9 ·如申請專利範圍第3項所述之場發射元件，其中 該絕緣隔離體之製作材料包括耐溫玻璃，塗敷絕緣層 之金屬、石夕、氧化石夕、陶瓷或雲母。 1 0.如申請專利範圍第3項所述之場發射元件，其中 該纟e*緣1¾離體與該陰極相對之表面進一步包括一概 極。 11 ·如申請專利範圍第1· 〇項所述之場發射元件，其中 該柵極通過沈積方法沈積於該表面之上。 1 2 ·如申請專利範圍第1 2項所述之場發射元件，其中 該栅極之沈積方法包括電子束蒸鑛法、熱蒸鍍法或錢 鍍法。 1 3 ·如申請專利範圍第1項所述之場發射元件，其中 2 該奈米碳管陣列之生長根部均開口。 1271765· _案號92107714_年月曰 修正_ 六、申請專利範圍 1 4.如申請專利範圍第1項所述之場發射元件，其中 該陰極通過沈積方法沈積於該奈米碳管之頂部。 1 5.如申請專利範圍第1 4項所述之場發射元件，其中 該陰極之沈積方法包括電子束蒸鍍法、熱蒸鍍法或濺 鑛法。1271765 立 921077" 6. The scope of application for patents 曰 曰 该 该 该 该 该 该 该 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场The end face and the insulating spacer are substantially in the same plane as the surface of the cathode. The field emission device of claim 3, wherein the insulating spacer is made of a temperature resistant glass, coated with an insulating layer. The field emission element of claim 3, wherein the surface of the body opposite the cathode further comprises a substantially pole. The field emission element of claim 1, wherein the gate is deposited on the surface by a deposition method. 1 2 · The field emission element according to claim 12, The deposition method of the gate includes an electron beam evaporation method, a thermal evaporation method or a money plating method. 1 3 · The field emission element according to claim 1, wherein 2 the carbon nanotube array The growth roots are all open. 1271765· _ Case No. 92107714 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The field emission element of claim 14, wherein the method of depositing the cathode comprises electron beam evaporation, thermal evaporation or sputtering. 第14頁 1271765 、Page 14 1271765, 本發明揭示一種奈米碳管場發射元件，其包括一陰 2供一奈米碳管陣列，該奈米碳管陣列由化學氣相沈積法 =備而成且包括一頂部及一生長根部，其中，該陰極與該 奈f破管陣列頂部電連接、該生長根部為場發射之電子發 射端。.發明通過反向製程方式利用平整之奈米碳管陣列 5部作為場發射-元件之電士 米碳管陣列端部作為電子發射端因其端部不平整而導致電 子發射之不均勻性，提高場發射元件電子發射之性能。〉 五、（一）、本案代表圖為：第六 圖 (二）、本案代表圖之元件代表符號簡單說明： 絕緣隔離體 20 絕緣隔離體上表面， 22 奈米碳管陣列 40 頂部 42 生長根部 44 陰極 50 五、英文發明摘要（發明名稱：FIELD EMISSION DEVICE) The present invention provides a f i e1d-emi ss i on device employing carbon nanotubes. The device includes a cathode, a carbon nanotube array, the carbon nanotube array prepared by the Chemical Vapor Deposition Method has a top surface and a bottom portion. The top surface of the carbon nanotube array is electrically conduct i ve1y connected with the cathode, and the bottom portionThe invention discloses a carbon nanotube field emission element comprising an anode 2 for a carbon nanotube array, the carbon nanotube array being prepared by chemical vapor deposition and comprising a top portion and a growing root portion. Wherein, the cathode is electrically connected to the top of the array of nanotubes, and the root of the growth is an electron emission end of field emission. The invention utilizes the end portion of the array of the carbon nanotube arrays of the field-emission-element as the electron-emitting end by the inverse process, and the electron emission is uneven due to the unevenness of the ends thereof. Improve the performance of electron emission from field emission components. 〉 V. (1) The representative figure of this case is: Figure 6 (II), the representative symbol of the representative figure in this case is a simple description: Insulation separator 20 Insulation separator upper surface, 22 Carbon nanotube array 40 Top 42 Growth root 44 cathode 50 5. English invention summary (invention name: FIELD EMISSION DEVICE) The present invention provides afi e1d-emi ss i on device employed carbon nanotubes. The device includes a cathode, a carbon nanotube array, the carbon nanotube array prepared by the The top surface of the carbon nanotube array is electrically conduct i ve1y connected with the cathode, and the bottom portion 1271765 ， _案號92107714_年月日 修正 六、指定代表圖1271765 , _ Case No. 92107714_年月月日 Revision 6. Designated representative map 第4頁Page 4