TWI236696B - A method for making a carbon nanotube field emission display device - Google Patents

Abstract

A method for making a carbon nanotube field emission display device includes the following steps: providing a working plate; forming an insulative layer on the working plate; depositing a layer of catalyst on the insulative layer; forming a spacer on the layer of catalyst such that a number of pixel areas defined therein; forming arrays of carbon nanotubes on the corresponding pixel areas; depositing a cathode on the top of the arrays of carbon nanotubes; attaching a cover to the cathode; removing the working plate, forming a gate electrode on the insulative layer; removing portions of the insulative layer corresponding to the pixel areas so that the arrays of carbon nanotubes are exposed; and packaging the above structure with an anode.

Description

1236696 案號 92107716 五、發明說明（1) 【發明所屬之技術領域】 本發明係關於一種奈米碳管場發射顯示裝置之製備方 法。 【先前技術】 奈米碳管係一種新型碳材料，由日本研究人員 于 1991 年發現，請參見” HeHcal fflicr〇tubuUs 〇f graphitic carbon’’，S Iijima，Nature，vol.354，p56 (1991)。奈米碳官具有極優異的導電性能，且其具有幾乎 接近理論極限之尖端表面積（尖端表面積愈小，其局部電 場愈集中），故，奈米碳管係已知最佳場發射材料。另， 奈米碳管具有極低的場發射電壓（小於丨〇〇 =㈣度，且電流極穩定，目此，奈米碳管非傳常輪適極合 衣備場發射顯示器之發射元件。 如圖13所示，戴宏傑、範守善等人在美國專利 /32’ 70 6號揭示一種奈米碳管場發射裝置及 置製借方法是在基底⑴表面形成多 ^ ::催化劑層130 ’直接於催化劑層13〇上生長得 ； =11二f米碳管束100作為場發射元件， ς :於:狀。該方法實現奈米碳管陣列二 θ如美國專利第6,515,415號所揭露，奈米石户总庙田 场發射顯示-般包括以下步驟面、A 6^用於 劑；形成絕緣層；在陰極表 ：^ =金屬催化 發射元件；在-巴绫居二：f 反官陣列作為電子 一 緣丄上形成柵極，最後將含有熒光物質之 1236696 修正 案號 921ί)771β 五、發明說明（2) 陽極與陰極真空封裝形成平面顯示器，通過控制栅極而控 制奈米碳管尖端發射電子。 、 惟，上述方法生成之奈米碳管高度不完全一致，有部 分奈米碳管較長，另一部分較短，造成不同奈米碳管發射 尖端不在同一平面，在發射電子時，容易產生電子發射不 均之缺點，且，傳統方法生成的奈米碳管高度雖然大體可 調，但很難精確控制H奈米碳管發射尖端與柵極之 間的間距也因此難以控制。 故，提供一種製備奈米碳管發射尖端位於同一平面、1236696 Case No. 92107716 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for preparing a nano carbon tube field emission display device. [Previous technology] Nano carbon tube is a new type of carbon material, which was discovered by Japanese researchers in 1991. Please refer to "HeHcal fflicr〇tubuUs 〇f graphitic carbon", S Iijima, Nature, vol. 354, p56 (1991) Nanocarbon has excellent electrical conductivity, and it has a tip surface area that is close to the theoretical limit (the smaller the tip surface area, the more concentrated the local electric field). Therefore, nanocarbon tubes are known as the best field emission materials. In addition, the carbon nanotube has a very low field emission voltage (less than 〇〇〇 = ㈣ degrees, and the current is extremely stable. For this reason, the nano carbon tube is suitable for the field emission display of the emission element. As shown in FIG. 13, Dai Hongjie, Fan Shoushan, et al. Disclosed a nano carbon tube field emission device and a method for making a carbon nanotube on the surface of a substrate 70 :: catalyst layer 130 ' Grow directly on the catalyst layer 13; = 11 2m carbon tube bundle 100 as a field emission element, ς: Yu: shape. This method realizes the carbon nanotube array 2θ as disclosed in US Patent No. 6,515,415, nanometer Ishido main temple field The emission display generally includes the following steps: A 6 ^ is used as an agent; an insulating layer is formed; on the cathode surface: ^ = metal catalytic emission element; 绫 绫 二 2: f diaphragm array as an electron edge 形成 to form a grid 1236696 Amendment No. 921ί) 771β containing fluorescent substances. V. Description of the invention (2) The anode and cathode are vacuum-sealed to form a flat display, and the tip of the nano carbon tube is controlled to emit electrons by controlling the grid. However, the above method The height of the generated carbon nanotubes is not exactly the same. Some carbon nanotubes are longer, while others are shorter. As a result, the emission tips of different carbon nanotubes are not in the same plane. When emitting electrons, it is easy to produce electrons with uneven emission. Moreover, although the height of the nano carbon tube generated by the traditional method is generally adjustable, it is difficult to accurately control the distance between the emission tip and the grid of the H nano carbon tube, and therefore it is difficult to control. Therefore, a method for preparing a nano carbon tube is provided. The emission tips are in the same plane,

t可控制發射尖端與柵極電極之間距的場發射 方法實為必要。 丨衣置I 【内容】 本發明之目的在於提供一 且可控制發射尖端與栅極電極 置之製備方法。 種發射尖端位於同一平面、 之間距的奈米碳管場發射裝 本發明提供一種奈 不喊& %發射顯示裝置 法， 述工 平整 面選 區域 列頂 之底 板， 去除 包括下列步驟：提供一工作板，其具 =的ΐ面形成一定厚度之絕緣層，胃絕緣層呈有： ” Α在絕緣層表面形成一催化劑層；在催化劑 形成具有一定高度之阻隔f，並形成顯；：： ，在示點陣區域生成奈米碳管陣 1 y、”車 部形成陰極電㉟；形成盘陰極；二列，在奈米碳管陣 路出絕緣層H緣層I面選定區域开::=工作A field emission method that can control the distance between the emission tip and the gate electrode is necessary.丨 Clothing device I [Content] The object of the present invention is to provide a manufacturing method capable of controlling the position of the emitting tip and the gate electrode. A nano carbon tube field emission device with emission tips located on the same plane and spaced apart. The present invention provides a nanoscale &% emission display device method. The flat surface selects the bottom plate of the column top. The removal includes the following steps: providing a The working plate has an insulating layer with a certain thickness on the facing surface, and the gastric insulating layer has: "A forms a catalyst layer on the surface of the insulating layer; forms a barrier f with a certain height on the catalyst, and forms a visible layer ::,, Generate a carbon nanotube array 1 y in the dot matrix area, and form a cathode electrode at the car part; form a disk cathode; two columns, open the selected area of the insulating layer H edge layer I surface on the nano carbon tube array :: = jobs

r…所述陰極電極和阻=和=壁外形相應 顯示點陣之區域，碳管陣列極封 1236696 修正 曰 _案號 92107716 五、發明說明（3) 裝陽極 山，、先前技術相較，本發明具有如下優點：奈米碳管發 射端在同一平面’ |而實現電子均勻發射·’且，奈米碳管 與柵極之間距可以控制，從而降低發射電壓。 【實施方式】 •明芩見第一圖，為本發明奈米碳管場發射顯示裝置之 製備方法流程圖。本發明方列步驟： /，驟1，提供工作板。此工二^ 後項步驟之支撐基礎，應當可以耐受奈米碳管生長時之溫 度，可_用对熱的非金屬材料。 …步驟2，在工作板表面形成一絕緣層。本步驟係在所 述ΐ作板之表面形成一定厚度之絕緣層，可以通過調節絕 、’象㈢之厚度控制奈米碳管與柵極之間的距離，該絕緣層具 有刀平整表面，以利於奈米碳管從同一平面開始生長；所 =、、巴緣層可以包括一層保護層，以便在後續步驟丨〇形成像 素孔時保護奈米碳管陣列。 =步驟3，在絕緣層表面形成一催化劑層。通過蒸鍍或 =子沈積的方法，在絕緣層表面形成具有一定厚度之薄 層，一般為過渡金屬Fe、Co、^或其合金，沈積厚度卜 10_，優選為3〜5nm。優選地，可以將催化劑層在3〇(rc〜 4〇〇 C溫度下退火，以利於催化劑奈米顆粒之形成。r ... the cathode electrode and the resistance = and = the area of the wall corresponding to the dot matrix, the carbon tube array pole seal 1236696 Amendment _ Case No. 92107716 V. Description of the invention (3) Mounted anode mountain, compared with the prior art, The invention has the following advantages: the emission end of the carbon nanotube is on the same plane, and the electrons are uniformly emitted; and the distance between the carbon nanotube and the grid can be controlled, thereby reducing the emission voltage. [Embodiment] • See the first figure, which is a flowchart of a method for preparing a nano carbon tube field emission display device according to the present invention. The steps of the present invention are as follows: Step 1. Provide a work board. The supporting foundation of the second step of this process should be able to withstand the temperature at which the carbon nanotubes grow, and non-metallic materials for heat can be used. … Step 2. Form an insulating layer on the surface of the work board. This step is to form an insulation layer with a certain thickness on the surface of the work plate. The distance between the carbon nanotube and the grid can be controlled by adjusting the thickness of the insulation layer. The insulation layer has a flat surface and It is beneficial for the carbon nanotubes to grow from the same plane; therefore, the edge layer can include a protective layer to protect the carbon nanotube array when the pixel holes are formed in subsequent steps. = Step 3, forming a catalyst layer on the surface of the insulating layer. A thin layer having a certain thickness is formed on the surface of the insulating layer by evaporation or sub-deposition, and is generally a transition metal such as Fe, Co, or an alloy thereof, and the deposition thickness is preferably 10 to 5 nm. Preferably, the catalyst layer may be annealed at a temperature of 30 ° C. to 400 ° C. to facilitate the formation of catalyst nano particles.

步驟4，在催化劑層表面形成阻隔壁並形成顯示點陣 :域。在催化劑層表面選定區域形成具有一定高度之阻隔 土其用來絶緣陰極電極和拇極電極，$時阻隔壁之間形 陣區域，以供生^米碳營所愛;阻隔壁之高度 1236696 -$S_J21〇ZI16__年月日 修正 五、發明說明（4) -~— 一' 可視奈米唉管所需長度而定，一般為1微米〜1 0 0 0微米之 間^，選1 0微米〜5 ο 〇微米；阻隔壁之材料應當能夠耐受奈 米，管生長之溫度（一般7〇〇艺左右），如高溫玻璃、塗" 覆絕緣層之金屬、矽、氧化矽、陶瓷或雲母等。 步驟5，生長奈米碳管陣列。通入碳氫氣體，加熱至 反應溫度，通過催化劑之催化作用，碳氫氣體發生化學反 應，使得在顯示點陣區域生成奈米碳管陣列，·生長奈米石户 官陣列之溫度視碳氫氣體成分、催化劑材料而定，一般^ 70 0 t左右；奈米碳管陣列之長度和阻隔壁高度大致相& 即可。 步驟6，形成陰極。在奈米碳管陣列頂部形成陰極電 極，一般以蒸鍍或化學沈積的方法沈積金屬材料形 電極，根據需要，陰極電極還可以包括一層電阻負反f 層。 、貝 驟7 ’ 底板 玎選 騍8 ’ 後， 〇 驟9 ’ 所述 步 形狀之 材料， 步 體翻轉 絕緣層 步 電極， 區域。 步 奈米碳In step 4, a barrier wall is formed on the surface of the catalyst layer and a display lattice: domain is formed. A barrier soil with a certain height is formed in a selected area on the surface of the catalyst layer, which is used to insulate the cathode electrode and the thumb electrode. When the barrier area is formed, it is for the love of ^ carbon camp; the height of the barrier wall is 1236696- $ S_J21〇ZI16__Year Month Day Amendment V. Description of the Invention (4)-~-One 'Depending on the required length of the nano tube, it is generally between 1 micron and 100 micron ^, choose 10 micron ~ 5 ο 〇 micron; the material of the barrier should be able to withstand nanometer and tube growth temperature (usually about 700 art), such as high-temperature glass, coated " insulating metal, silicon, silicon oxide, ceramic or Mica and so on. Step 5. Grow the carbon nanotube array. Pass in the hydrocarbon gas and heat it to the reaction temperature. Through the catalytic action of the catalyst, the hydrocarbon gas undergoes a chemical reaction, so that a nano-carbon tube array is generated in the display dot matrix area. Depending on the gas composition and catalyst material, it is generally around 70 0 t; the length of the nano carbon tube array and the height of the barrier wall can be roughly & Step 6. A cathode is formed. A cathode electrode is formed on the top of the carbon nanotube array. Generally, a metal material-shaped electrode is deposited by evaporation or chemical deposition. According to requirements, the cathode electrode may further include a negative resistance f layer. Step 7: After selecting 骒 8 'for the bottom plate, step 9', the step-shaped material, the step body is turned over, the insulating layer, the step electrode, and the area. Step Nano Carbon

々取低极，即形成與陰極電極和阻隔壁相應 用=i撐所述陰極電極和阻隔壁，底板為絕緣 用玻璃、塑膠、陶莞等。 :所轉述並广脫上工作板。將上述步驟μ形成之整 a &板作為支撐基礎，脫去工作板，露出 形成柵極。在絕緣層表面選 潠宕「从、虚咏 欠^域形成柵極 k疋£域應避開奈米碳管陣列 r ^顯不點陣之相應 ，形成像素孔。去除絕緣層相 传太半r〇i μ , W之區域，露出 --—-通過，從而形Take the low pole, that is, form the cathode electrode and the barrier wall corresponding to the cathode electrode and the barrier wall. The bottom plate is made of insulating glass, plastic, or ceramic. : Recited and widely off the work board. Using the entire a & plate formed in the above step as a support base, the work plate was removed to expose and form a grid. On the surface of the insulation layer, select the "from the imaginary and negative domains to form the gates. The domains should avoid the corresponding carbon nanotube arrays and display the corresponding dot matrix to form pixel holes. Remove the insulation layer and pass half of the r 〇i μ, the area of W, exposed --- --- through, thus shaped

便不未石反官尖端發射之電 路出 1236696 _案號91101716 玍月日 修正_ 五、發明說明（5) 成像素孔，去除方法包括濕法刻姓、幹法刻触等。 步驟1 1是封裝陽極，形成平面顯示器，其中陽極表面 包括熒光層。 請參見第二圖至第十二圖，下面將以第一實施例詳細 說明本發明之各個步驟。 如第二圖所示，提供帶有細微凹槽（圖未標示）之模 板2 0，以作為步驟1所需之工作板，所設細微凹槽有利於 後續步驟順利脫去模板2 0，為使表面平整，可用石蠟等容 易去除之物質塗平’該模板2 〇作為後續步驟之支撐基礎。 如第三圖所不，在模板2〇表面通過鍍膜、印刷或直接 採用現成的模板形成表面平整的氧化矽層2 2作為絕緣層， 其表面平整度要求小於1微米，厚度為1微米至丨〇 〇 〇微米， 優選1 0微米〜2 0 0 料，能夠耐受奈 氧化石夕層2 2可以 如第四圖所 保護層2 4，其沈 該石夕保護層2 4厚 〜1〇〇奈米，氧化 和柵極電極40間 成的奈米碳管陣 法钱刻去除。 微米，該 米碳管生 通過濕法 示 進一 積方法可 度在允許 碎層2 2和 距，所述 列3 0之作 氧化矽層2 2也可選用其他絕緣材 長所需溫度（約7 0 0 °C )，且該 蝕刻去除。 步在氧化矽層2 2表面沈積形成矽 採用電子束蒸發或磁控濺射法， 的情況下儘量薄，一般為丨〇奈米 石夕保護層2 4 —起控制陰極電極3 4 石夕保護層2 4起到保護後續步驟形 用，可耐文濕法钱刻，但可用幹 尺丹 i ，尤積方法可按田f工击— 、熱蒸發或去牆从i „仲，丨_ ♦用電子束洛 化劑層26 #^用^ 優The circuit emitted by the tip of the anti-government is 1236696 _Case No. 91101716 玍 月 日 Amendment _ V. Description of the invention (5) The pixel holes are removed, and the removal methods include wet engraving and dry engraving. Step 11 is to package the anode to form a flat display, wherein the anode surface includes a fluorescent layer. Referring to the second to twelfth figures, each step of the present invention will be described in detail with the first embodiment. As shown in the second figure, a template 20 with fine grooves (not shown in the figure) is provided as the working board required in step 1. The fine grooves are set to facilitate the subsequent steps to remove the template 20 smoothly. Make the surface smooth, and use easy-to-remove materials such as paraffin to flatten the template 20 as the supporting foundation for subsequent steps. As shown in the third figure, the surface of the template 20 is coated, printed, or a ready-made template is used to form a flat silicon oxide layer 22 as an insulating layer. The surface flatness is required to be less than 1 micrometer and the thickness is 1 micrometer to 丨〇〇〇 micron, preferably 10 micron ~ 200 material, able to withstand the nano-oxide stone layer 22 can be protected layer 24 as shown in the fourth figure, the Shen Xi protective layer 24 is thick ~ 100. Nanometer carbon nanotube array method formed between the oxidation and the gate electrode 40 can be removed. Micron, the meter carbon tube can be broken through the wet method to allow the chip layer 2 2 and the distance. The silicon oxide layer 2 2 in the column 30 can also use other insulation materials. The temperature required (about 7) 0 0 ° C), and the etching is removed. Step silicon is deposited on the surface of the silicon oxide layer 2 2 using electron beam evaporation or magnetron sputtering. In the case, it is as thin as possible. Generally, it is a nanometer stone protective layer 2 4 — controlling the cathode electrode 3 4 Layers 2 and 4 play a role in protecting the subsequent steps, and can withstand wet-money money engraving, but can be used with dry ruler i. You can use the field method to hit according to the field f, thermal evaporation or removing the wall from i „仲, 丨 _ ♦ Use an electron beam ionizing agent layer 26 # ^ 用 ^ 优

如第五圖所示，在矽保護層24表面沈藉俏# % s 9β 般是Fe、C〇、Ni或直合全，$沈積催化劑層Μ 1236696 五 1 號 92i(mift 、發明說明（6) 曰 修正 。優選地’可以將催化劑層3 ~4 下2:退火’以利於催化劑奈米顆粒之形成。 阻隔-d示，在催化劑層26上形成具有-定高度之 隔壁之間f極電極34與拇極電極40，同時在阻 述氧化矽声22 :::::域生長奈米碳管陣列30 ’因為所 證奈米碳“;夕保護層24厚度很薄，故可保 間ίΐ之長度大致相同’-般為1微米〜1 000微米之 二V】：且微米〜5°°微米；m隔壁之材料應當能夠耐受奈 =長之溫度（一般700 °c左右），如高溫玻璃、塗 之^你s ,金屬、矽、氧化矽、陶瓷或雲母等；該阻隔壁 衣太可採用鍍膜、印刷或直接採用現成的模板。 Μ 奈米碳管陣列30係通過化學氣相沈積法生成，在一定 腹度條件下通入碳氫氣體，通過催化劑層2 6之催化作用， ^氣體發生化學反應，使得在顯示點陣區域生成奈米碳 &陣列3 0，生長奈米碳管陣列3 〇之溫度一般在了 〇 〇。〇左 右，奈米碳管陣列3〇之長度和阻隔壁28高度大致相同即 〇 如第七圖所示，在奈米碳管陣列3 〇頂部沈積形成電阻 負反饋層32，其材料可選用合適電阻之矽、合金等，厚度 可根據電阻需要而決定，該電阻大小由電路設計及使用時 的柵極電壓決定。該電阻負反饋層32可採用電子束蒸發、 熱蒸發或濺射法沈積。該電阻負反饋層32係可選擇的。 如第八圖所示，在電阻負反饋層32表面沈積形成陰極 電極34，一般以蒸鍍或化學沈積的方法沈積金屬材料形 1236696 修正 ΜΆ 92107716 五、發明說明（7) 成2 f材料之熱膨張係數應與電阻負反饋層3 2匹配。 ^九圖所示形成與陰極電極3 4和阻隔壁2 8外形相 ’以支撐所述陰極電極34與阻隔壁28，底板 為j材料’可以選用破璃、塑膠、陶竞等，可採用印 刷、粘接、融合等方法製作之。 m如圖所示，將第九圖形成之整體翻轉後，以所述 / ?為支撐基礎’脫去模板20，露出氧化矽層22，麸 ί用t::匕！層22表：相應區域形成柵極電極4。。沈積可 I列：蓺推Γ發、熱瘵發或濺射法’可採用鏤空之模板或 積在氧化碎層22表面相應區域，所選相 應£域2避開奈米碳管陣列30作為顯示點陣之區域。 石夕伴$ 一圖：t丄去除顯示點陣區域之氧化矽層22 ' Πί! 除催化劑層26反應剩餘的材料，露 =奈=官：列30,使奈米碳管陣列3。發射之電子可以ς 二像素孔；氧化石夕層22可用濕法刻姓去除，而 =保濩層24可以耐受濕法刻蝕，保護奈米碳管陣列3〇 1環，去除氧化石夕層22之後，彳用幹法刻#去 ^，必要時用鐳射轟擊去除催化劑層26。 又9 如第十二圖所示，封裝陽極5〇，形成平面顯示*，宜 中％極50表面與奈米碳管陣列3〇對應處包括熒光層μ。/、 =月第二實施例與上述第一實施例步驟大“ 不同：處在於’石夕氧化層22形成之後，As shown in the fifth figure, on the surface of the silicon protective layer 24, Shen Qiao #% s 9β is generally Fe, Co, Ni, or straight, and the catalyst layer M 1236696 No. 5 92i (mift, invention description (6 ) Said correction. It is preferred that the catalyst layer 3-4 can be annealed to facilitate the formation of catalyst nano particles. Blocking -d shows that an f-electrode between the partition walls with a fixed height is formed on the catalyst layer 26. 34 and the thumb electrode 40, while blocking the sound of silicon oxide 22 ::::: domain growth nano carbon tube array 30 'Because the proven nano carbon "; the protective layer 24 is very thin, so it can be maintained The length is roughly the same-usually 1 μm to 1 000 μm [V]: and μm to 5 ° ° μm; the material of the m next door should be able to withstand the temperature of Nai = long (usually about 700 ° c), such as high temperature Glass, coated glass, metal, silicon, silicon oxide, ceramic, or mica, etc. The barrier coat can be coated, printed, or directly using a ready-made template. Μ carbon nanotube array 30 is through chemical vapor deposition It is produced by the method, and the hydrocarbon gas is introduced under a certain degree of abdominal conditions, and the catalysis of the catalyst layer 26 is performed. A chemical reaction occurs in the body, so that the nano-carbon & array 30 is generated in the display dot matrix area, and the temperature of growing the nano-carbon tube array 30 is generally around 0.000. The barrier wall 28 has approximately the same height, that is, as shown in the seventh figure, a negative resistance feedback layer 32 is formed on the top of the nano-carbon tube array 30. The material can be silicon, alloy, etc. of suitable resistance, and the thickness can be according to the resistance requirements. It is determined that the resistance is determined by the circuit design and the gate voltage during use. The negative resistance feedback layer 32 can be deposited by electron beam evaporation, thermal evaporation or sputtering. The negative resistance feedback layer 32 is optional. As shown in Figure 8, a cathode electrode 34 is formed on the surface of the negative resistance feedback layer 32. Generally, a metal material is deposited by evaporation or chemical deposition. 1236696 Modified MΆ 92107716 V. Description of the invention (7) Thermal expansion coefficient of 2 f material It should match the resistance negative feedback layer 32. ^ The shape shown in the figure is formed with the cathode electrode 34 and the barrier wall 28 to support the cathode electrode 34 and the barrier wall 28. The bottom plate is made of j material. It can be made with broken glass, plastic, Tao Jing, etc. by printing, bonding, fusion, etc. m As shown in the figure, after turning over the whole formed in the ninth figure, use the / as the support base to remove it. The template 20, the silicon oxide layer 22 is exposed, and the t :: dagger layer is used. Table 22: The gate electrode 4 is formed in the corresponding area. The deposition can be performed in column I: push, thermal, or sputtering. The hollowed out template may be accumulated on the corresponding area on the surface of the oxidized debris layer 22, and the corresponding £ 2 is selected to avoid the nano-carbon tube array 30 as the area for displaying the dot matrix. The silicon oxide layer 22 ′ Πί! In addition to the remaining material of the catalyst layer 26 reaction, dew = nano = official: column 30, making the nano carbon tube array 3. The emitted electrons can be two pixel holes; the oxidized stone layer 22 can be removed by wet engraving, and the protective layer 24 can withstand wet etching, protect the carbon nanotube array 301 ring, and remove the oxidized stone layer. After the layer 22, the catalyst layer 26 is removed by dry etching, and if necessary, by laser bombardment. 9 As shown in the twelfth figure, the anode 50 is packaged to form a flat display *, and it is desirable that the surface of the middle electrode 50 corresponds to the nano-carbon tube array 30 and includes a fluorescent layer μ. /, = The steps of the second embodiment are greatly different from the steps of the first embodiment described above: the reason is that after the formation of the 'shixi oxide layer 22,

24之步驟，直接於石夕氧化層22表面沈積催 早J :::電極40之後’去除顯示點陣區域之氧化石夕層22在： —»__去$乘彳餘#催化劑材料’即可y奈米碳管陣列30， 1236696 ---tS__i2107716_年月 日 佟,τ 五、發明說明（8) ' " " '— -----— 然後進行後續步驟。 太、，^ ΐ明上述方法形成之奈米碳管場發射顯示裝置，因 $ :碳管陣列30生長在同一平面’故翻轉後； 官陣列30之端位于同一平面，從而實現電子均勾之目 的’另=，奈米碳管陣列30與栅極電極4〇之間的距離基本 取決於氧化矽層22之厚度（若有矽保護層24時，加上石夕保 護之厚度），如此，通過控制其厚度即可達到控制奈 米峡管陣列3 0與栅極電極4 〇的間距之目的。 本發明第三實施例包括以下步驟： 提供一絕緣基底，該絕緣基底之材料可為玻璃、矽、 氧化矽等可耐受奈米碳管生長溫度之絕緣材料，其表面可 用機械拋光等方法拋光形成一定平整度，以利於夺米碳管 P車列生長； 在泫絶緣基底表面形成一催化劑層，可利用化學沈積 方法形成Fe、Co、Ni等過渡金屬或其合金，形成催化劑 層； 在催化劑層表面選定區域形成一阻隔壁，並形成顯示 點陣區域’該阻隔壁之高度一般為1微米〜丨〇 〇 〇微米之間， 優選1 0微米〜5 0 0微米，阻隔壁之材料應當能夠耐受奈米碳 管生長之溫度（一般7〇〇 t：左右），如高溫玻璃、塗覆絕 緣層之金屬、矽、氧化矽、陶瓷或雲母等； 在顯不點陣區域形成奈米碳管陣列，利用化學氣相沈 積法生成奈米碳管陣列，其高度與阻隔壁高度大致相同即 町； 以#石炭㈣歹,J頂部形成陰極電極，一般以蒸鍍或化 1236696 案號 9210771R 丘、發明說明（9) 月 日 修正 學沈積法沈積金屬材科形成陰極電極. 形成與陰極電極及阻隔壁外形相痛 為絕緣材料，可選用破璃、塑膠、陶底板，該底 接、融合等方法製作之； 尤寺，採用印刷、在絕，基底表面選定區域形成柵 枯去除絕緣基底對應_ *點陣之區《，露出次 列； 路奈米碜營陣 最後’封t陽極’形成場發射顯示裝置。 綜上所述，本發明確已符合發明專利之要件 提出專利申請。惟’以上所述者僅為本發明之依法 例：自不能：此限制本案之申請專利範圍。舉“：；素 技藝之人士杈依本發明之精神所作之等效修飾或變化，皆 應涵蓋於以下申請專利範圍内。 鲁 第14頁 1236696 _案號92107716_年月日_ί±^_ 圖式簡單說明 第一圖係本發明奈米碳管場發射顯示裝置之製備方法 流程圖。 第二圖至第十二圖係本發明具體實施例各步驟示意 圖。 第十三圖係先前技術奈米碳管場發射裝置示意圖。 【主要元件符號說明】Step 24, directly deposit the early J ::: electrode 40 on the surface of the oxidized layer 22 of the stone to remove the oxidized stone layer 22 in the display lattice region at: — »__ 去 $ 乘 彳 余 #catalyst material, that is, However, the carbon nanotube array 30, 1236696 --- tS__i2107716_ year, month and day, τ V. Description of the invention (8) '" "' — -----— Then proceed to the next step. 、, ^ ΐ Ming Ming The nano-carbon tube field emission display device formed by the above method, because the carbon tube array 30 grows on the same plane, so it is turned over; the ends of the official array 30 are on the same plane, so that the electrons are uniformly connected. Purpose 'another =, the distance between the nano carbon tube array 30 and the gate electrode 40 is basically determined by the thickness of the silicon oxide layer 22 (if there is a silicon protective layer 24, plus the thickness of Shi Xi protection), so, By controlling its thickness, the purpose of controlling the distance between the nano-gap tube array 30 and the gate electrode 40 can be achieved. The third embodiment of the present invention includes the following steps: An insulating substrate is provided. The material of the insulating substrate can be glass, silicon, silicon oxide, or other insulating materials that can withstand the growth temperature of carbon nanotubes. The surface can be polished by mechanical polishing or other methods. A certain flatness is formed to facilitate the growth of the rice-growing carbon tube P train. A catalyst layer is formed on the surface of the rhenium insulating substrate. The chemical deposition method can be used to form transition metals such as Fe, Co, and Ni or their alloys to form a catalyst layer. A barrier wall is formed in a selected area of the layer surface, and a display dot matrix area is formed. The height of the barrier wall is generally between 1 micrometer and 1000 micrometers, preferably 10 micrometers to 500 micrometers. The material of the barrier wall should be able to Temperature to withstand the growth of carbon nanotubes (generally 700t: about), such as high-temperature glass, metal coated with insulation, silicon, silicon oxide, ceramics, or mica, etc .; nanocarbon is formed in the area of the visible lattice Tube array, using chemical vapor deposition method to generate a nano carbon tube array, the height of which is about the same as the height of the barrier; ie, the cathode electrode is formed on the top of # 石炭 ㈣ 歹, Generally, the cathode electrode is formed by vapor deposition or chemical conversion of 1236696, case number 9210771R, and the invention description (9). Modified metal deposition method is used to form the cathode electrode. The formation of the cathode electrode and the shape of the barrier wall is an insulating material. Plastic, pottery floor, made by the bottom connection, fusion and other methods; You Temple, using printing, forming grids on selected areas of the substrate surface to remove the insulation substrate corresponding to the _ * lattice area ", exposed secondary columns; The battalion formation finally 'sealed the anode' to form a field emission display device. In summary, the present invention has indeed met the requirements of the invention patent and filed a patent application. However, the above is only the law according to the present invention: since it cannot: this limits the scope of patent application in this case. For example: "; equivalent modifications or changes made by those skilled in the art in accordance with the spirit of the present invention should be covered by the following patent applications. Lu Page 14 1236696 _ Case No. 92107716_ 年月 日 _ί ± ^ _ The drawings briefly explain the first diagram is a flowchart of a method for preparing a nano-carbon tube field emission display device of the present invention. The second to twelfth diagrams are schematic diagrams of each step of a specific embodiment of the present invention. The thirteenth diagram is the prior art Schematic diagram of the meter carbon field emission device.

模板 20 氧化石夕層 22 矽保護層 24 催化劑層 26 阻隔壁 28 奈米碳管陣列 30 電阻負反饋層 32 陰極電極 34 底板 36 棚' 極電極 40 陽極 50 熒光層 52Template 20 Stone oxide layer 22 Silicon protective layer 24 Catalyst layer 26 Barrier wall 28 Nano carbon tube array 30 Resistive negative feedback layer 32 Cathode electrode 34 Base plate 36 Shed 'pole electrode 40 Anode 50 Fluorescent layer 52

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Claims (1)

1236696 案號 9210771g_ 曰 修正 六、申請專利範圍 1 · 一種奈米碳管場發射顯示梦 驟： 之‘備方法，包括下列步 提供一工作板，其具有—李 · 在所述工作板之表面形杰 心成一絕緣層； 在絕緣層表面形成一催化劑層； 在催化劑層表面選定區域: 示點陣區域； h 亚形成顯 在顯示點陣區域形成奈米碳管陣列； 在奈米碳管陣列頂部形成陰極電極I 形成與陰極電極和阻隔壁外形相應之底板； 脫去工作板，露出絕緣層； 在纟S緣層表面選定區域形成柵極電極； 去除纟巴緣層對應顯示點陣之區域，露出奈米碳管陣 封裝陽極。 2.如申請專利範圍第1項所述之奈米碳管場發射顯示裝置 之製備方法，其中該絕緣層表面平整度小於1微米。 3 ·如申請專利範圍第2項戶斤述之奈米峻管場發射顯示裝置 之製備方法，其中該絕緣層厚度為1微米〜1 〇 0 0微米。 4 ·如申請專利範圍第2項戶斤述之奈米碳管場發射顯示裝置 之製備方法，其中該絕緣層可用濕、法刻姓去除。 5 ·如申請專利範圍第1項所述之奈米碳管場發射顯示裝置 之製備方法，其中該絕緣層進一步包括一保護層。 6 ·如申請專利範圍第丨項所述之奈米碳管場發射顯示裝置1236696 Case No. 9210771g_ Amendment VI. Patent application scope 1 · A nano carbon tube field emission display dream step: The preparation method includes the following steps to provide a working plate with-Lee · The shape of the surface of the working plate Jiexin formed an insulating layer; a catalyst layer was formed on the surface of the insulating layer; a selected area on the surface of the catalyst layer: a dot matrix area; h sub-formation was formed in the display dot matrix area to form a nano carbon tube array; on top of the nano carbon tube array Forming the cathode electrode I forming a bottom plate corresponding to the shape of the cathode electrode and the barrier wall; removing the working plate to expose the insulating layer; forming a gate electrode on a selected area of the surface of the 缘 S edge layer; The anode of the carbon nanotube array package is exposed. 2. The method for manufacturing a nano-carbon tube field emission display device according to item 1 of the scope of patent application, wherein the flatness of the surface of the insulating layer is less than 1 micron. 3. The method for preparing a nanometer field emission display device described in the second item of the patent application, wherein the thickness of the insulating layer is 1 micrometer to 1000 micrometers. 4 · According to the method for preparing the nano carbon tube field emission display device described in the second item of the patent application scope, the insulating layer can be removed by wet or carved name. 5. The method for manufacturing a nano-carbon tube field emission display device according to item 1 of the scope of patent application, wherein the insulating layer further includes a protective layer. 6 · Nano carbon tube field emission display device as described in item 丨 of patent application scope 第〗6頁 1236696 _案號 92107716_年月日__ 六、申請專利範圍 之製備方法，其中該保護層位于絕緣層表面，介於絕 緣層與催化劑層之間。 7. 如申請專利範圍第4項或第5項所述之奈米碳管場發射顯 示裝置之製備方法，其中該保護層厚度為1 0奈米〜1微 米。 8. 如申請專利範圍第4項或第5項所述之奈米碳管場發射顯 示裝置之製備方法，其中該保護層耐受濕法刻蝕，且 可用幹法刻蝕去除。 9. 如申請專利範圍第1項所述之奈米碳管場發射顯示裝置 之製備方法，其中該催化劑層厚度為1奈米〜1 0奈米。 1 〇.如申請專利範圍第1項所述之奈米碳管場發射顯示裝置 之製備方法，其中該催化劑層可用鐳射轟擊法去除。 11.如申請專利範圍第1項所述之奈米碳管場發射顯示裝置 之製備方法，其中該阻隔壁高度為1微米〜1 0 0 0微米。 1 2.如申請專利範圍第1項所述之奈米碳管場發射顯示裝置 之製備方法，其中形成奈米碳管陣列包括通入反應氣 體，升溫到反應溫度，在催化劑作用下生成奈米碳管 陣歹1J 。 1 3.如申請專利範圍第1項所述之奈米碳管場發射顯示裝置 之製備方法，其中該奈米碳管陣列高度與阻隔壁高度 大致相同。 1 4.如申請專利範圍第1項所述之奈米碳管場發射顯示裝置 之製備方法，其中該陰極電極進一步包括電阻負反饋 層0Page 6 1236696 _Case No. 92107716_ YYYY__ VI. A method for preparing a patent, wherein the protective layer is located on the surface of the insulating layer, between the insulating layer and the catalyst layer. 7. The method for preparing a nanometer carbon tube field emission display device as described in item 4 or item 5 of the scope of the patent application, wherein the thickness of the protective layer is 10 nanometers to 1 micrometer. 8. The method for preparing a nano-carbon tube field emission display device according to item 4 or item 5 of the scope of patent application, wherein the protective layer is resistant to wet etching and can be removed by dry etching. 9. The method for preparing a nanometer carbon tube field emission display device according to item 1 of the scope of the patent application, wherein the thickness of the catalyst layer is 1 nm to 10 nm. 10. The method for preparing a nano-carbon tube field emission display device according to item 1 of the scope of the patent application, wherein the catalyst layer can be removed by laser bombardment. 11. The method for preparing a nano-carbon tube field emission display device according to item 1 of the scope of the patent application, wherein the height of the barrier rib is 1 μm to 100 μm. 1 2. The method for preparing a nano-carbon tube field emission display device as described in item 1 of the scope of patent application, wherein forming the nano-carbon tube array includes passing in a reaction gas, heating up to a reaction temperature, and generating nano-particles under the action of a catalyst. Carbon tube array 歹 1J. 1 3. The method for preparing a nano-carbon tube field emission display device as described in item 1 of the scope of the patent application, wherein the height of the nano-carbon tube array is substantially the same as the height of the barrier wall. 14. The method for manufacturing a nano-carbon tube field emission display device as described in item 1 of the scope of patent application, wherein the cathode electrode further includes a resistive negative feedback layer. 第17頁 案號 9210771ft 1236696 六、申請專利範圍 1 5 ·如申請專利範圍第丨4項所述之奈米碳管場發射顯示壯 置之製備方法，其中該電阻負反饋層位於陰極衣 面，介於奈米碳管與陰極電極之間。 蚀表 16.如申*請專利範圍第丨項所述之奈米碳管場發射 之衣備方法，其中該陽極包括熒光層。 ”、、不羞置 包括下 列 ιγ. 一+種驟奈米碳管場發射顯示裝置之製備0方法， 提供一絕緣基底； 在絕緣基底表面形成一催化劑層. ，並形成顯 在催化劑層表面選定區域 \ 示點陣區域； 取阻壁 在顯示點陣區域形成 在奈米碳管陣列頂二二^奴官陣列’· 形成與陰極電極和陰極電極； 在絕緣基底表面選定土外形相應之底板； 去除絕緣基底對應& :域形成柵極電極； 陣列；及 一不點陣之區域，露出奈米石山〜 封裝陽極。 &Case No. 9210771ft 1236696 on page 17 6. Application for patent scope 1 5 · The preparation method of nanometer carbon tube field emission display as described in item 4 of the patent application scope, wherein the resistance negative feedback layer is located on the cathode surface, Between the carbon nanotube and the cathode electrode. Etching table 16. The method for preparing a nano-carbon tube field emission device as described in the application item 丨, wherein the anode includes a fluorescent layer. ", Not shameless includes the following ιγ. A + method of preparing a nano-nano carbon tube field emission display device, providing an insulating substrate; forming a catalyst layer on the surface of the insulating substrate, and forming a selection selected on the surface of the catalyst layer Area \ display dot matrix area; take the barrier wall in the display dot matrix area to form the top of the nano carbon tube array 222 slave array 'to form the cathode electrode and cathode electrode; select the base plate corresponding to the shape of the soil on the surface of the insulating substrate; Remove the insulating substrate corresponding to the &: domains forming the gate electrode; the array; and a non-lattice area, exposing the nano-stone mountains ~ the package anode.