TWI248626B

TWI248626B - Method for fabricating a field emission device

Info

Publication number: TWI248626B
Application number: TW92107708A
Authority: TW
Inventors: Liang Liu; Shou-Shan Fan
Original assignee: Hon Hai Prec Ind Co Ltd
Priority date: 2003-04-04
Filing date: 2003-04-04
Publication date: 2006-02-01
Also published as: TW200421386A

Abstract

A method for fabricating a field emission device includes the following steps: providing a working plate; depositing a layer of catalyst on the working plate; forming an array of carbon nanotubes on the layer of catalyst; depositing a cathode on the top of the array of carbon nanotubes; removing the working plate and exposing the bottom of the carbon nanotubes array to an exterior.

Description

1248626 _案號_ 9·7708___年月日修正五、發明說明（1) " '" ' 【發明所屬之技術領域】本發明涉及一種場發射元件之製備方法，尤其涉及一種奈米破管陣列場發射元件之製備方法。【先前技術】奈米碳官係一種新型碳材料，由曰本研究人員丨丨』丨職於1991年發現，請參見” HeUcal of graphitic carbon\ S Iijima, Nature? Vol.354, P56 (1 9 9 1 )。奈米碳管具有極優異之導電性能，且其具有接近理論極限之尖端表面積（尖端表面積愈小，其局部電場愈集中），故奈米碳管係已知最佳之場發射材料，直且有極低之場發射電壓（小於1〇〇伏），可傳輸極大之^二密度，且電流極穩定，目而非常適合做場發之；如第十二圖所示，戴宏杰、范守善等人於美國 6’ 232, 706號揭示—種奈米碳管場發射裝置及盆法，該裝置製備方法係於基底21〇表面形成多；=方沈積催化劑層23 0，直接於催化劑層23〇基底21°之奈米碳管伽作為場發射元件， f管束2 0 0高度可達到3〇。微米，奈 2〇之不未用於場發射顯示器。 S 1早夕〗生長並應太半二μ t Ϊ方/去生成之奈米碳管高度不完全一致，部八不米石反官較長，另一部分 =刀端不於同一平面凡个丨」不木石反官發射尖特別係如第十二圖所示之凹面1248626 _ Case No. _ 9·7708___ Year Month Day Amendment 5, Invention Description (1) "'" 'Technical Field of the Invention The present invention relates to a method for preparing a field emission element, and more particularly to a nano-breaking A method of preparing a tube array field emission element. [Prior Art] Nano carbon official is a new type of carbon material, which was discovered in 1991 by the researcher, "HeUcal of graphitic carbon\ S Iijima, Nature? Vol.354, P56 (1 9 9 1 ). The carbon nanotubes have excellent electrical conductivity and have a tip surface area close to the theoretical limit (the smaller the tip surface area, the more concentrated the local electric field), so the best carbon emission is known. The material is straight and has a very low field emission voltage (less than 1 〇〇V), which can transmit a very large density, and the current is extremely stable, which is very suitable for field emission; as shown in the twelfth figure, Dai Hongjie , Fan Shoushan et al., US 6' 232, No. 706, discloses a nano-carbon nanotube field emission device and a pot method. The preparation method of the device is formed on the surface of the substrate 21; the square deposition catalyst layer 230, directly to the catalyst Layer 23 〇 substrate 21 ° nano carbon tube gamma as a field emission element, f tube bundle 200 0 height can reach 3 〇. Micron, Nai 2 is not used for field emission display. S 1 morning and evening growth and should Too half μ μ Ϊ square / to generate nano carbon Is not exactly the same height, no portion eight meters long stone anti officer, the other end portion of the knife = not on the same plane where a Shu "is not particularly sharp wood and stone trans official emission lines of the concave surface as shown in FIG XII

第6頁 1248626 修正曰案號 92107708 五、發明說明（2) 米碳管陣列表© ’於發射電子時，極易產生電子發射不均，從而導致顯示不均之缺點。 X 、故，提供-種製備電子發射均勾之場實為必要。卞力【内容】本發明之目的在於提供一種發射端面平整、電子發射均勻之場發射元件之製備方法。 χ 為實現本發明目的，本發明提供一種場發射元件之製 ;方法，包括下列步驟··提供-基底，、該基底 ί:;於：述基底表面形成一催化劑|;通入碳源氣體， ί陣；反^二作用τ ’碳源氣體生成奈米碳頂端形成陰極電極，·去除基底，與先前技術相較，本發明且右^ 列發射端於同一平面，從而4實奈米碳管陣【實施方式】 τ-現電子均勾發射。請參見第一圖，本發明方法主要步驟1，提供一基底，此基底俜後鋒 V驟· 當選用能夠财受奈米破管生長妙、氧化石夕等材料度之材料’如高溫玻璃、步驟2’於基底表面形成一平整表面，可通過機械拋光或化學拋光等方法， * — 整度越小越好，以利後續步驟太乎I 土 &表面平正，平生長；〜佼貝/鄉不未碳管可從同一平面開始 1248626 ~Γ--— 921 °770^--年月曰修正_' 五、發明說明（3) -----—---- 步驟3，於基底表面形成一催化劑層，通過化學沈積方法，於該表面形成催化劑層，催化劑一般為過渡金屬 =、〇、Nl或其合金，沈積厚度卜10奈米，優選為3〜5奈；；優選地，可進一步將催化劑層於3 0 0 °C〜4 0 0 °C溫度下退火，以利催化劑奈米顆粒之形成；又下太$二，生長奈米碳管陣列，以化學氣相沈積法生長妷官陣列，一般包括：通入碳源氣體，加熱至反應溫Page 6 1248626 Amendment 曰 Case No. 92107708 V. INSTRUCTIONS (2) Carbon tube array table © ' When electrons are emitted, it is easy to produce electron emission unevenness, which leads to the disadvantage of uneven display. X, therefore, it is necessary to provide a kind of preparation for electronic emission.卞力 [Contents] An object of the present invention is to provide a method for preparing a field emission element having a flat end surface and uniform electron emission. χ In order to achieve the object of the present invention, the present invention provides a field emission device, a method comprising the steps of: providing a substrate, the substrate; forming a catalyst on the surface of the substrate; and introducing a carbon source gas, ί Array; anti-two action τ 'carbon source gas to generate nano carbon tip to form a cathode electrode, · remove the substrate, compared with the prior art, the present invention and the right column emission end in the same plane, thus 4 carbon nanotubes Array [Embodiment] τ-current electrons are hooked. Referring to the first figure, the main step 1 of the method of the present invention provides a substrate, and the substrate has a back-end V-curve. When a material such as high-temperature glass is used, which is capable of being subjected to nano-tubes, oxidized stone, etc. Step 2' forms a flat surface on the surface of the substrate, which can be mechanically polished or chemically polished. * - The smaller the degree, the better, so that the subsequent steps are too much I soil & the surface is flat, flat growth; ~ mussel / The township does not have carbon tubes can start from the same plane 1248626 ~ Γ - 921 ° 770 ^ - year 曰曰 _ _ 5, invention description (3) ---------- Step 3, on the base Forming a catalyst layer on the surface, forming a catalyst layer on the surface by a chemical deposition method, the catalyst is generally a transition metal =, ruthenium, Nl or an alloy thereof, and the deposition thickness is 10 nm, preferably 3 to 5 na;; The catalyst layer can be further annealed at a temperature of 300 ° C to 400 ° C to facilitate the formation of the catalyst nanoparticle; and the lower carbon dioxide array is grown by chemical vapor deposition. The array of eunuchs generally consists of: introducing carbon source gas and heating to Should warm

:太ί t ?化劑之催化作$，碳源氣體發生化學反應，生八=炭笞陣列，生長奈米碳管陣列之溫度視碳源氣體成 :I催化劑材料而t，-般為700 °c左右；奈米碳管陣列 =之長度可視要求而定，一般為10微米〜500微米。因上 J步驟2形成之表面平整，&，奈米碳管陣列生長於同一平面，奈米碳管陣列之生長面平整；步驟5，形成陰極電極，於奈米碳管陣列頂端形成陰雪，極，一般可用化學沈積之方法沈積金屬材料形成陰極電極，根據需要，陰極電極還可包括一層電阻負反饋層； ^步驟6，去除基底，可利用化學刻蝕方法去除基底，路出奈米碳官陣列生長面，形成發射面平整之場發射元件。: too ̄ ̄ ̄ catalyzed by the catalyst, the carbon source gas chemical reaction, the raw eight = anthrax array, the temperature of the growing carbon nanotube array depends on the carbon source gas into: I catalyst material and t, generally 700 Around °c; the length of the carbon nanotube array = can be determined according to requirements, generally 10 microns ~ 500 microns. Because the surface formed by step J above is flat, &, the carbon nanotube array is grown on the same plane, the growth surface of the carbon nanotube array is flat; step 5, the cathode electrode is formed, and the snow is formed at the top of the carbon nanotube array. The electrode is generally deposited by a chemical deposition method to form a cathode electrode. The cathode electrode may further include a resistor negative feedback layer as needed; ^Step 6, the substrate is removed, the substrate may be removed by chemical etching, and the substrate is removed. The carbon official array grows to form a field-emitting element whose emission surface is flat.

請參見第二圖至第八圖，本發明第一實施例主要包括下面步驟。如第二圖所示’提供帶有細微凹槽2〇1之金屬板2〇，以作為後續步驟之工作板，所設細微凹槽2〇1有利於後續步驟完成後順利脫去金屬板20，為使表面平整，可用石堪Referring to the second to eighth figures, the first embodiment of the present invention mainly includes the following steps. As shown in the second figure, 'the metal plate 2〇 with the fine groove 2〇1 is provided as the working plate of the subsequent step, and the fine groove 2〇1 is provided to facilitate the smooth removal of the metal plate 20 after the subsequent steps are completed. In order to make the surface flat, the stone can be used

1248626 ___案號92107708_年 L 日倦，下_ 五、發明說明（4) 等易去除之物質塗平凹槽201及金屬板2〇表面，該金屬板 2 〇作為後續步驟之支撐基礎。如第三圖所示，於金屬板20表面通過鑛膜、印刷或直接採用現成之模板等方法形成表面平整之氧化石夕層2 2，作為後續步驟生長奈米碳管陣列30之基底，可通過^械拋光專方法使彳于其表面平整光滑’表面平整度要求小於1微米’厚度為1微米至1000微米，優選1〇微米〜2⑽微米，該乳化石夕層2 2也可選用其他絕緣材料，能夠耐受奈米碳管生長所需溫度（約7 0 0 C ) ’該氧化矽層2 2可通過化學餘刻方法去除。如第四圖所示，進一步於氧化矽層22表面沈積催化劑層24，一般係鐵、鈷、鎳或其合金。催化劑層24厚度為卜 1 〇奈米，優選為3〜5奈米。優選地，可將催化劑層2 4於 3 0 0 C〜4 0 0 C溫度下進行退火，以利於催化劑奈米顆粒之形成。如第五圖所示，於氧化矽層22表面生長奈米碳管陣列 3 0，奈米碳管陣列3 0係通過化學氣相沈積法生成，於一定溫度條件下通入碳源氣體，如乙炔或乙烯，通過催化劑層 24之催化作用，碳源氣體發生化學反應，使得於氧化矽層 22表面生成奈米碳管陣列30 ;生長奈米碳管陣列3〇之溫度一般於70 0 C左右。因所述氧化矽層22之表面平整，故可保證奈米碳管陣列30生長於同一平面；奈米碳管陣列3〇之長度視生長過程而定，一般微米〜1〇〇〇微米之間，用於場發射優選10微米〜500微米。1248626 ___ Case No. 92107708_Year L Day Tired, bottom _ V. Invention Description (4) The easily removable material is coated with the groove 201 and the surface of the metal plate 2, which serves as the supporting basis for the subsequent steps. As shown in the third figure, the surface of the metal plate 20 is formed by a mineral film, printing or directly using a ready-made template or the like to form a surface smoothed oxidized layer 2 2 as a substrate for growing the carbon nanotube array 30 in a subsequent step. The surface of the enamel layer is required to be smooth and smooth by the mechanical polishing method. The surface flatness requirement is less than 1 micrometer. The thickness is from 1 micrometer to 1000 micrometers, preferably from 1 micrometer to 2 (10) micrometer. The emulsified stone layer 2 2 may also be provided with other insulation. The material is capable of withstanding the temperature required for the growth of the carbon nanotubes (about 700 C). The ruthenium oxide layer 22 can be removed by chemical re-etching. As shown in the fourth figure, the catalyst layer 24 is further deposited on the surface of the ruthenium oxide layer 22, typically iron, cobalt, nickel or alloys thereof. The catalyst layer 24 has a thickness of from 1 to 5 nm, preferably from 3 to 5 nm. Preferably, the catalyst layer 24 is annealed at a temperature of 300 ° C to 400 ° C to facilitate the formation of catalyst nanoparticle. As shown in the fifth figure, the carbon nanotube array 30 is grown on the surface of the yttrium oxide layer 22, and the carbon nanotube array 30 is formed by chemical vapor deposition, and a carbon source gas is introduced under a certain temperature condition, such as Acetylene or ethylene, through the catalytic action of the catalyst layer 24, the carbon source gas undergoes a chemical reaction, so that the carbon nanotube array 30 is formed on the surface of the ruthenium oxide layer 22; the temperature of the growth carbon nanotube array 3 一般 is generally about 70 ° C . Since the surface of the ruthenium oxide layer 22 is flat, the carbon nanotube array 30 can be ensured to grow on the same plane; the length of the carbon nanotube array 3 视 depends on the growth process, generally between micrometers and 1 micrometer. For field emission preferably from 10 microns to 500 microns.

1248626 9210770«1248626 9210770«

五、發明說明（5) 如第六圖所示，於奈米碳負反饋層402及陰極電極4〇，_ 積之方法沈積金屬材料形成，電阻之矽、合金等，厚度可根如第七圖所示，脫去金屬除，洛出奈米碳管陣列3 〇 ;氧去除，必要時用雷射轟擊去除出奈米碳管陣列30生長面作為射元件。因奈米碳管陣列3〇生子均勻之目的。如第八圖所示，進一步於極電極44，即可通過柵極電極電子，所述栅極電極44形成於陰極電極40。管陣列30頂部沈積形成電阻 -般陰極電極40係以化學沈電阻負反饋層402可選合適據電阻需要而決定。板2 0，並將氧化矽層2 2去化矽層22可用化學刻蝕方法反應剩餘之催化劑層2 4，露電子發射端，從而形成場發長面平整，故，可達發射電奈米碳管陣列30兩側形成柵來控制奈米碳管陣列3 〇發射絕緣層4 2表面，以絕緣隔開V. Description of the invention (5) As shown in the sixth figure, the nano-carbon negative feedback layer 402 and the cathode electrode are formed by depositing a metal material, a resistor, a metal, etc., and the thickness may be as a seventh. As shown in the figure, the metal stripping is removed, and the carbon nanotube array 3 is removed; the oxygen is removed, and if necessary, the growth surface of the carbon nanotube array 30 is removed by laser bombardment as an emitting element. The carbon nanotube array 3 has a uniform purpose. Further, as shown in the eighth embodiment, the electrode electrode 44 is further passed through the gate electrode, and the gate electrode 44 is formed on the cathode electrode 40. The top of the tube array 30 is deposited to form a resistor - the cathode electrode 40 is a chemically resistive resistor. The negative feedback layer 402 is optionally adapted to the needs of the resistor. The plate 20 and the yttrium oxide layer 2 2 are removed from the ruthenium layer 22. The remaining catalyst layer 24 can be chemically etched to expose the electron-emitting end, thereby forming a long surface of the field, so that the nano-emission can be reached. A grid is formed on both sides of the carbon tube array 30 to control the surface of the carbon nanotube array 3 〇 emission insulating layer 42, separated by insulation

請參見第九圖至第十一圖步驟示意圖。為本發明第二實施例主要Please refer to the ninth to eleventh steps. Mainly for the second embodiment of the present invention

、如第九圖所示，提供一工作板11〇，通過機械拋光等方法，使其表面平整光滑，優選表面平整度小於丨微米，再通過化學沈積方法，於所述表面形成biO奈米厚度之催化劑層（圖未標示），催化劑一般為過渡金屬鐵、鈷、鎳或其合金，然後，通入碳源氣體乙炔或乙烯，加熱至反應溫度（700 C〜1000 C)，於催化劑作用下，於工作板11〇表面生長奈米碳管陣列1 30，所得之奈米碳管陣列丨3 〇頂端係否均勻不影響電子發射效果。因工作板110表面平整光滑As shown in the ninth figure, a working plate 11 is provided, and the surface thereof is smoothed by mechanical polishing or the like, preferably, the surface flatness is less than 丨 micrometer, and then the surface thickness of the biO nanometer is formed by the chemical deposition method. Catalyst layer (not shown), the catalyst is generally transition metal iron, cobalt, nickel or its alloy, and then, through the carbon source gas acetylene or ethylene, heated to the reaction temperature (700 C ~ 1000 C), under the action of the catalyst The carbon nanotube array 1 30 is grown on the surface of the working plate 11 , and the obtained carbon nanotube array 丨 3 〇 top is uniform and does not affect the electron emission effect. Because the surface of the working plate 110 is smooth and smooth

第10頁 1248626 ---號議7708__年_月曰_修正 _ 五、發明說明（6) 故，奈米碳管陣列1 3 0之生長面平整均勻。如第十圖所示，於奈米碳管陣列1 3 0頂端沈積金屬材料，形成陰極電極1 5 0，所述陰極電極1 5 0與奈米碳管陣列 1 3 0頂端電性連接。如第十一圖所示，將工作板1 1 〇去除，保留奈米碳管陣列1 3 0及陰極電極1 5 0，以奈米碳管陣列1 3 0之生長面作為電子發射端面，即可作為場發射元件，應用於場發射顯示器等電子器件。因奈米碳管陣列130生長面與工作板110表面一致，其表面平整度與工作板11 0表面平整度相同，小於1微米，故’奈米碳管陣列1 3 0之電子發射端面均勻一致，從而實現電子發射均勻一致之目的。综上所述’本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡孰釆技藝之人士援依本發明之精神所作之等效修飾或^，皆應涵蓋於以下申請專利範圍内。Page 10 1248626 --- No. 7708__ years _ month 曰 _ correction _ five, invention description (6) Therefore, the growth surface of the carbon nanotube array 130 is even and even. As shown in the tenth figure, a metal material is deposited on the top of the carbon nanotube array 130 to form a cathode electrode 150, which is electrically connected to the top of the carbon nanotube array 130. As shown in the eleventh figure, the working plate 1 1 〇 is removed, and the carbon nanotube array 130 and the cathode electrode 150 are retained, and the growth surface of the carbon nanotube array 130 is used as the electron emission end face, that is, It can be used as a field emission element for electronic devices such as field emission displays. The growth surface of the carbon nanotube array 130 is consistent with the surface of the working plate 110, and the surface flatness is the same as the surface flatness of the working plate 110, which is less than 1 micrometer, so the electron emission end face of the carbon nanotube array 130 is uniform. In order to achieve uniform electron emission. In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application in accordance with the law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or modifications made by those skilled in the art to the spirit of the present invention are intended to be included in the scope of the following claims.

1248626 _案號92107708_年月曰修正_ 圖式簡單說明第一圖係本發明場發射元件之製備方法流程圖。第二圖至第八圖係本發明第一實施例各步驟示意圖。第九圖至第十一圖係本發明第二實施例各步驟示意圖。第十二圖係先前技術奈米碳管場發射裝置示意圖。【主要元件符號說明】1248626 _ Case No. 92107708_年月曰修正 Revision _ Schematic description of the drawings The first figure is a flow chart of the preparation method of the field emission element of the present invention. 2 to 8 are schematic views of steps of the first embodiment of the present invention. The ninth to eleventh drawings are schematic views of the steps of the second embodiment of the present invention. Figure 12 is a schematic diagram of a prior art carbon nanotube field emission device. [Main component symbol description]

金屬板 20 工作板 1 10 氧化矽層 22 奈米碳管陣列 130 催化劑層 24 陰極電極 150 奈米碳管陣列 30 奈米碳管束 200 陰極電極 40 細微凹槽 201 絕緣層 42 垂直基底 210 桃極電極 44 多孔石夕 220 電阻負反饋層 402 催化劑層 230Metal plate 20 working plate 1 10 yttrium oxide layer 22 carbon nanotube array 130 catalyst layer 24 cathode electrode 150 carbon nanotube array 30 carbon nanotube bundle 200 cathode electrode 40 fine groove 201 insulating layer 42 vertical substrate 210 peach electrode 44 Porous Shixia 220 Resistance Negative Feedback Layer 402 Catalyst Layer 230

第12頁Page 12

Claims

1248626 _ 案號 92107708 六、申請專利範圍 i 一種場發射元件之製備方法，包括下列步驟：提供一工作板，該工作板具有一平整表面；於所述工作板表面形成一催化劑層；劑通入碳源氣體’加熱至反應溫度，碳源氣體於作用下，生成奈米碳管陣列；；化於奈米碳管陣列頂端形成陰極電極；去除工作板使奈米破管陣列根部端露出。 2 ·如申請專利範圍第1項所述之場發射元件之製備方去其中戶斤述工作板之表面之平整度小於1微米。 3 ·如申請專利範圍第1項所述之場發射元件之製備方、去其中所述工作板係由能夠耐受奈米碳管生長溫度之材&料製成。 4 ·如申請專利範圍第1項戶斤述之場發射元件之製備方法其中所述工作板之材料包栝高溫玻璃、矽或氧化石夕。~ 5·如申請專利範圍第1項所述之場發射元件之製備方法，其中所述碳源氣體包括乙快或乙烯。 6 ·如申請專利範圍第1項所述之場發射元件之製備方法，其中所述催化劑為過渡金屬鐵、鈷、鎳或其合金。、 7·如申請專利範圍第1項所述之場發射元件之製備方法，其中所述催化劑層厚度為1奈米至1 0奈米。 8 ·如申請專利範圍第7項所述之場發射元件之製備方法，其中所述催化劑層厚度為3奈米至5奈米。 9 ·如申請專利範圍第1項所述之場發射元件之製備方法，其中所述陰極電極係通過沈積金屬材料形成陰極電極。 1248626 _ _案號92107708____本月日修正__ 六、申請專利範圍 I 〇 ·如申請專利範圍第9項所述之場發射元件之製備方法，其中所述形成陰極電極可進一步包括一電阻負反饋層。 II ·如申請專利範圍第1 0項所述之場發射元件之製備方法，其中所述電阻負反饋層為矽或合金。 1 2 · 一種場發射元件之製備方法，包括下列步驟：提供一工作板，該工作板具有一平整表面；於所述工作板表面形成一催化劑層；通入碳源氣體，加熱至反應溫度，碳源氣體於催化劑作用下，生成奈米碳管陣列；、-於奈米碳管陣列頂端形成陰極電極；去除工作板使奈米碳管陣列根部端露出；於奈米破管陣列兩端形成一柵極。 1 3.如申請專利範圍第1 2項所述之場發射元件之製備方法，其中所述工作板之表面之平整度小於1微米。 1 4.如申請專利範圍第1 2項所述之場發射元件之製備方法，其中所述工作板係由能夠耐受奈米碳管生長溫度之材料製成。 1 5.如申請專利範圍第1 2項所述之場發射元件之製備方法，其中所述碳源氣體包栝乙炔或乙烯。 1 6.如申請專利範圍第1 2項所述之場發射元件之製備方法，其中所述催化劑為過渡金屬鐵、銘、鎳或其合金。 /了·如申請專利範圍第1 2項所述之場發射元件之製備方法，其中戶斤述催化劑層之厚度為1〜1 〇奈米。 ι\·如申請專利範圍第17項所述之場發射元件之製備方 1248626 _案號92107708_年月日__ 六、申請專利範圍法，其中所述催化劑層之厚度為3奈米至5奈米。 1 9.如申請專利範圍第1 2項所述之場發射元件之製備方法，其中所述陰極電極係通過沈積金屬材料形成陰極電極。 2 0.如申請專利範圍第1 9項所述之場發射元件之製備方法，其中所述形成陰極電極可進一步包括一電阻負反饋層01248626 _ Case No. 92107708 VI. Patent application scope i A method for preparing a field emission device, comprising the steps of: providing a working plate having a flat surface; forming a catalyst layer on the surface of the working plate; The carbon source gas is heated to the reaction temperature, and the carbon source gas acts to form an array of carbon nanotubes; the cathode electrode is formed at the top of the carbon nanotube array; the working plate is removed to expose the root end of the nanotube array. 2. The preparation of the field emission element as described in claim 1 of the patent application is directed to the surface of the work plate having a flatness of less than 1 micrometer. 3. The preparation of the field emission element according to claim 1, wherein the working plate is made of a material & material capable of withstanding the growth temperature of the carbon nanotube. 4. The preparation method of the field emission element of the first item of the patent application scope is as follows: The material of the working board is covered with high temperature glass, enamel or oxidized stone. The method for producing a field emission element according to claim 1, wherein the carbon source gas comprises ethyl or ethylene. 6. The method of producing a field emission element according to claim 1, wherein the catalyst is transition metal iron, cobalt, nickel or an alloy thereof. 7. The method of preparing a field emission element according to claim 1, wherein the catalyst layer has a thickness of from 1 nm to 10 nm. 8. The method of producing a field emission element according to claim 7, wherein the catalyst layer has a thickness of from 3 nm to 5 nm. The method of producing a field emission element according to claim 1, wherein the cathode electrode forms a cathode electrode by depositing a metal material. 1248626 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Feedback layer. II. The method of preparing a field emission element according to claim 10, wherein the resistance negative feedback layer is tantalum or an alloy. 1 2 · A method for preparing a field emission element, comprising the steps of: providing a working plate having a flat surface; forming a catalyst layer on the surface of the working plate; introducing a carbon source gas, heating to a reaction temperature, The carbon source gas generates an array of carbon nanotubes under the action of the catalyst; forming a cathode electrode at the top of the carbon nanotube array; removing the working plate to expose the root end of the carbon nanotube array; forming at both ends of the nanotube array a gate. A method of producing a field emission element according to the above aspect, wherein the surface of the working plate has a flatness of less than 1 μm. The method of producing a field emission element according to claim 12, wherein the working plate is made of a material capable of withstanding the growth temperature of the carbon nanotube. The method of producing a field emission element according to claim 12, wherein the carbon source gas is acetylene or ethylene. The method of producing a field emission element according to the above aspect of the invention, wherein the catalyst is transition metal iron, indium, nickel or an alloy thereof. / The method for preparing the field emission element according to claim 12, wherein the thickness of the catalyst layer is 1 to 1 nanometer. ι\·If the preparation of the field emission element described in claim 17 of the patent scope is 1248626 _ case number 92107708_年月日日__ 6. The patent scope method, wherein the catalyst layer has a thickness of 3 nm to 5 Nano. The method of producing a field emission element according to claim 12, wherein the cathode electrode forms a cathode electrode by depositing a metal material. The method for preparing a field emission device according to claim 19, wherein the forming the cathode electrode further comprises a resistance negative feedback layer.

第15頁Page 15