TWI225186B - Positive photosensitive composition - Google Patents
Positive photosensitive composition Download PDFInfo
- Publication number
- TWI225186B TWI225186B TW091113605A TW91113605A TWI225186B TW I225186 B TWI225186 B TW I225186B TW 091113605 A TW091113605 A TW 091113605A TW 91113605 A TW91113605 A TW 91113605A TW I225186 B TWI225186 B TW I225186B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- atom
- patent application
- positive
- item
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/124—Carbonyl compound containing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials For Photolithography (AREA)
Description
1225186 更正本 六、申請專利範圍 ?22
Rzb C—CH—C—Π 24 (pV) ο
—C—ο—ρ I
(pVl) 其中Ru表示甲基、乙基、正丙基、異丙基、正丁基、 異丁基、或第二丁基:Z表示與碳原子一起形成脂環烴 基所需之原子基;Ri2至Ri6各獨立地表示具有1至4 個碳原子之直鏈或分支烷基或脂環烴基,其條件爲Rl 2 至Rm至少之一及R1S或R,6表示脂環烴基;Rl7至r21 各獨立地表示氫原子、具有1至4個碳原子之直鏈或分 支烷基、或脂環烴基,其條件爲R17至R2I至少之一表 示脂環烴基,及R19或R21表示具有1至4個碳原子之 直鏈或分支烷基、或脂環烴基·,及R22至R25各獨立地 表示具有1至4個碳原子之直鏈或分支烷基、或脂環烴 基’其條件爲Κ·22至Κ·25至少之一表不脂環煙基,或Κ·23 與R24可彼此組合形成環,
(ll-A) (H-B) R13 Ρ,/15 -3 - 1225186 更正本 六、申請專利範圍 其中rI3'至r16'可爲相同或不同,各獨立地表示氫原子 、鹵素原子、氰基、-COOH、-COOR5、可藉酸之作用分 解之基、-CbCO-X-Ai-R,,,、可具有取代基之C,-C4烷基 ;R5表示可具有取代基之烷基、可具有取代基之 C7-C25環形烴基、或Y表示之基;X表示氧原子、硫原 子、-NH-、-NHS〇2-、或-NHS02-NH-: A·表示單鍵或二 價鍵聯基;或Ri3·至RW至少之二可彼此組合形成環:η 表示 0 或 1 ; R17•表示-COOH、-COOR5、-CN.、羥基、 可具有取代基之C,-C4烷氧基、-CO-NH-R6、-CO-NH· so2-r6、或Y表示之基:R6表示可具有取代基之C,-C4 烷基;及Y表示之基具有下式:
其中R21'至R3q’可爲相同或不同,各獨立地表示氫原子 或可具有取代基之C^-CU烷基;及a及b各表示1或2 〇 2.如申請專利範圍第1項之正型光敏劑組成物,其中成分 (B)之樹脂含具有內酯結構之重複單位。 3 .如申請專利範圍第1項之正型光敏劑組成物,其中成分 (A1)之化合物爲锍鹽。 4.如申請專利範圍第1項之正型光敏劑組成物,其中成分 (A 1)之在以光化射線或輻射照射時產生α -位置經氟原子 -4 - 1.225186 更正本 六、申請專利範圍 取代之烷屬磺酸之化合物爲鏑鹽,其由陰離子部份與陽 離子部份組成,由以下式(A1)表示:
其中R1、R2與R3可爲相同或不同,各獨立地表示有機 殘基,或R1、R2與R3之二可彼此組合形成環,及此環 可含氧原子、硫原子、酯鍵、醯胺基鍵、或羰基;及Z· 表示陰離子爲在α-位置之碳原子經氟取代之烷屬磺酸 陰離子。 5. 如申請專利範圍第4項之正型光敏劑組成物,其中锍鹽 爲式(Α1)表示之化合物,其中R1、R2與R3可爲相同或 不同,各表示芳基。 6. 如申請專利範圍第4項之正型光敏劑組成物,其中锍鹽 爲式(Α1)表示之化合物,其中R1、R2與R3可爲相同或 不同’各獨立地表示不含芳族環之有機殘基。 7 .如申請專利範圍第4項之正型光敏劑組成物,其中锍鹽 爲以下式(Α1-3)表示之化合物:
5 1225186 更正本 六、申請專利範圍 其中Ric至Rs。可爲相同或不同,各獨立地表示氫原子 、Cm院基、Cl 5烷氧基、或鹵素原子;R6c與可爲 相同或不同’各獨立地表示氫原子、C|5烷基或苯基; 與Ry可爲相同或不同’各獨立地表示Ci 5烷基、 氧院基、C,—5烷氧基羰基甲基、烯丙基、或乙烯基, 或Rle至Rk及1^與心之二或更多個各可彼此組合形 成環結構,及環結構可含氧原子、硫原子、酯鍵、或醯 胺基鍵;及ze·表示其中〇:-位置之碳原子經氟原子取代 之烷屬磺酸陰離子。 8.如申請專利範圍第2項之正型光敏劑組成物,其中具有 內酯結構之重複單位由以下式(IV)表示: J^1a ch2-c
其中Ru表示氫原子或甲基;Wi表示單鍵、伸烷基、醚 基、硫醚基、羰基、酯基、或其二或更多種之組合; Ral、Rbl、Rel、Rdl、與Rel可爲相同或不同’各獨立地 表示氫原子或具有1至4個碳原子之烷基;及111與η可 爲相同或不同,各獨立地表示〇至3之整數,其條件爲 m與η之總和爲2至6。 9 .如申g靑專利範圍第1項之正型光敏劑組成物,其中成分 一 6 — 1225186 更正本 六、申請專利範圍 (B)之樹脂更含具有以下式(V-1)至(V·4)任何之一表示之 基之重複單位:
其中Rlb、R2b、R3b、R4b、與Rsb可爲相同或不同,各 獨立地表示氫原子、可具有取代基之烷基、可具有取代 基之環烷基、或可具有取代基之烯基,或Rlb、R2b、 R3b、R4b、與Rsb之二可彼此組合形成環。 1 0 ·如申請專利範圍第1項之正型光敏劑組成物,其中成 分(B)之樹脂更含具有以下式(VI)表示之基之重複單位:
其中A6表示單鍵、伸院基、環伸烷基、醚基、硫醚基 、羰基、酯基、或其二或更多種之組合;R6a表示氫原 1225186 更正本 六、申請專利範圍 子、具有1至4個碳原子之烷基、氰基、或鹵素原子。 11.如申請專利範圍第1項之正型光敏劑組成物,其中成 分(B)之樹脂更含具有以下式(VII)表示之基之重複單位
其中Rk、R3e與R4C可爲相同或不同,各表示氫原子或 經基’其條件爲R2e、R3c與R4c至少之一表示經基。 12.如申請專利範圍第1項之正型光敏劑組成物,其中成 分(B)之樹脂更含具有以下式(viii)表示之基之重複單位 一CH-CH —
(VIII) 其中Z2表示-〇·或_N(R41)_ ; R41表示氫原子、羥基、烷 基、齒院基、或-0-S02-R42 ;及R42表示烷基、鹵烷基 、環烷基、或莰醇殘基。 13.如申請專利範圍第1項之正型光敏劑組成物,其更包 括鹼性化合物。 1 4 ·如申請專利範圍第13項之正型光敏劑組成物,其中鹼 性化合物爲具有以下式(Α)至(Ε)任何之一表示之結構 ~ 8 - 1225186 六、申請專利範圍 之化合物: Γ' R250—N——Κ25έ (A) 個碳 R2s〇 其中R25Q、R251與R252可爲相同或不同,各獨立地 氨原子 '具有1至6個碳原子之院基、具有1运 原子之胺基烷基、具有1至6個碳原子之羥棱基 有6至2〇個碳原子之經取代或未取代芳烷基 與R2M可彼此組合形成環, •N—C=N— (B) :C—N=C — (C) ;C—N — (D) R254 R255 :253 —C—N —C-—R256 (E) 其中R2 53、R254、R2 5 5與R256可爲相同或不 一 j ’各獨立 地表示具有1至6個碳原子之烷基。 1 5.如申請專利範圍第1項之正型光敏劑組成物,其更包 括以氟爲主及/或以矽爲主界面活性劑。 一9一
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001188499A JP3912767B2 (ja) | 2001-06-21 | 2001-06-21 | ポジ型感光性組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
TWI225186B true TWI225186B (en) | 2004-12-11 |
Family
ID=19027589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW091113605A TWI225186B (en) | 2001-06-21 | 2002-06-21 | Positive photosensitive composition |
Country Status (4)
Country | Link |
---|---|
US (1) | US6808862B2 (zh) |
JP (1) | JP3912767B2 (zh) |
KR (2) | KR100913135B1 (zh) |
TW (1) | TWI225186B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI637938B (zh) * | 2016-05-11 | 2018-10-11 | 信越化學工業股份有限公司 | 新穎鋶化合物及其製造方法、光阻組成物及圖案形成方法 |
US11127592B2 (en) | 2018-05-31 | 2021-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photosensitive groups in resist layer |
TWI749563B (zh) * | 2019-05-27 | 2021-12-11 | 日商信越化學工業股份有限公司 | 分子光阻組成物及使用其之圖案形成方法 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100382960B1 (ko) | 1998-07-03 | 2003-05-09 | 닛뽕덴끼 가부시끼가이샤 | 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법 |
US7335454B2 (en) * | 2001-12-13 | 2008-02-26 | Fujifilm Corporation | Positive resist composition |
US7510822B2 (en) * | 2002-04-10 | 2009-03-31 | Fujifilm Corporation | Stimulation sensitive composition and compound |
JP2004233953A (ja) * | 2002-12-02 | 2004-08-19 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物 |
US7005230B2 (en) * | 2003-01-16 | 2006-02-28 | Jsr Corporation | Radiation-sensitive resin composition |
US7358408B2 (en) * | 2003-05-16 | 2008-04-15 | Az Electronic Materials Usa Corp. | Photoactive compounds |
JP2005077811A (ja) * | 2003-09-01 | 2005-03-24 | Fuji Photo Film Co Ltd | 感光性組成物及びそれを用いたパターン形成方法 |
US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
JP4612999B2 (ja) * | 2003-10-08 | 2011-01-12 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US7906268B2 (en) * | 2004-03-18 | 2011-03-15 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
US8053158B2 (en) * | 2006-01-19 | 2011-11-08 | Samsung Electronics Co., Ltd. | Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns |
WO2007124092A2 (en) * | 2006-04-21 | 2007-11-01 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
JP4355725B2 (ja) | 2006-12-25 | 2009-11-04 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP5205027B2 (ja) * | 2007-07-18 | 2013-06-05 | 東京応化工業株式会社 | 化合物の製造方法 |
CN102066439B (zh) * | 2008-03-12 | 2013-08-07 | 大赛璐化学工业株式会社 | 包含内酯骨架的单体、高分子化合物及光致抗蚀剂组合物 |
JP5126359B2 (ja) * | 2008-05-30 | 2013-01-23 | 日立化成工業株式会社 | 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
KR101023089B1 (ko) * | 2008-09-29 | 2011-03-24 | 제일모직주식회사 | 포지티브형 감광성 수지 조성물 |
KR101333704B1 (ko) * | 2009-12-29 | 2013-11-27 | 제일모직주식회사 | 포지티브형 감광성 수지 조성물 |
KR101400192B1 (ko) | 2010-12-31 | 2014-05-27 | 제일모직 주식회사 | 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자 |
JP5666408B2 (ja) | 2011-01-28 | 2015-02-12 | 信越化学工業株式会社 | レジスト組成物、及びこれを用いたパターン形成方法 |
US10248020B2 (en) | 2012-12-28 | 2019-04-02 | Rohm And Haas Electronic Materials Llc | Acid generators and photoresists comprising same |
JP6421449B2 (ja) * | 2013-05-20 | 2018-11-14 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、酸発生体及び化合物 |
JP6394481B2 (ja) | 2015-04-28 | 2018-09-26 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
JP6668831B2 (ja) * | 2016-03-04 | 2020-03-18 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物 |
JP6561937B2 (ja) | 2016-08-05 | 2019-08-21 | 信越化学工業株式会社 | ネガ型レジスト組成物及びレジストパターン形成方法 |
US10416558B2 (en) | 2016-08-05 | 2019-09-17 | Shin-Etsu Chemical Co., Ltd. | Positive resist composition, resist pattern forming process, and photomask blank |
JP7009980B2 (ja) | 2016-12-28 | 2022-01-26 | 信越化学工業株式会社 | 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法 |
WO2018123388A1 (ja) | 2016-12-28 | 2018-07-05 | Jsr株式会社 | 感放射線性組成物、パターン形成方法並びに金属含有樹脂及びその製造方法 |
JP7009978B2 (ja) | 2016-12-28 | 2022-01-26 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法 |
JP7344108B2 (ja) | 2019-01-08 | 2023-09-13 | 信越化学工業株式会社 | レジスト組成物、及びパターン形成方法 |
JP7415973B2 (ja) | 2021-02-12 | 2024-01-17 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法 |
JP7415972B2 (ja) | 2021-02-12 | 2024-01-17 | 信越化学工業株式会社 | 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3918881B2 (ja) * | 1995-11-02 | 2007-05-23 | 信越化学工業株式会社 | 新規スルホニウム塩及び化学増幅ポジ型レジスト材料 |
JP3677963B2 (ja) * | 1997-08-28 | 2005-08-03 | Jsr株式会社 | 感放射線性樹脂組成物 |
TW457277B (en) * | 1998-05-11 | 2001-10-01 | Shinetsu Chemical Co | Ester compounds, polymers, resist composition and patterning process |
TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
JP4131062B2 (ja) * | 1998-09-25 | 2008-08-13 | 信越化学工業株式会社 | 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
JP3763239B2 (ja) | 1999-01-18 | 2006-04-05 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
US6200728B1 (en) * | 1999-02-20 | 2001-03-13 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of photoacid generators |
SG76651A1 (en) | 1999-03-31 | 2000-11-21 | Sumitomo Chemical Co | Chemical amplification type positive resist |
JP4124907B2 (ja) | 1999-04-06 | 2008-07-23 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
US6365321B1 (en) * | 1999-04-13 | 2002-04-02 | International Business Machines Corporation | Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations |
JP4370679B2 (ja) * | 1999-04-26 | 2009-11-25 | Jsr株式会社 | 感放射線性樹脂組成物 |
US6596458B1 (en) * | 1999-05-07 | 2003-07-22 | Fuji Photo Film Co., Ltd. | Positive-working photoresist composition |
JP3976109B2 (ja) * | 1999-06-30 | 2007-09-12 | 富士フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
JP4281152B2 (ja) * | 1999-05-14 | 2009-06-17 | Jsr株式会社 | スルホン酸オニウム塩化合物および感放射線性樹脂組成物 |
JP4562829B2 (ja) * | 1999-09-01 | 2010-10-13 | ダイセル化学工業株式会社 | 4−オキサトリシクロ[4.3.1.13,8]ウンデカン−5−オン誘導体 |
JP3444821B2 (ja) * | 1999-10-06 | 2003-09-08 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
JP3955419B2 (ja) * | 1999-10-20 | 2007-08-08 | 富士フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
JP2001166478A (ja) * | 1999-12-03 | 2001-06-22 | Jsr Corp | 感放射線性樹脂組成物 |
JP4529316B2 (ja) * | 2000-06-23 | 2010-08-25 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物及びスルホニウム塩 |
-
2001
- 2001-06-21 JP JP2001188499A patent/JP3912767B2/ja not_active Expired - Fee Related
-
2002
- 2002-06-20 KR KR1020020034666A patent/KR100913135B1/ko active IP Right Grant
- 2002-06-20 US US10/174,944 patent/US6808862B2/en not_active Expired - Lifetime
- 2002-06-21 TW TW091113605A patent/TWI225186B/zh not_active IP Right Cessation
-
2009
- 2009-05-08 KR KR1020090040456A patent/KR100938803B1/ko active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI637938B (zh) * | 2016-05-11 | 2018-10-11 | 信越化學工業股份有限公司 | 新穎鋶化合物及其製造方法、光阻組成物及圖案形成方法 |
US11127592B2 (en) | 2018-05-31 | 2021-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photosensitive groups in resist layer |
TWI754801B (zh) * | 2018-05-31 | 2022-02-11 | 台灣積體電路製造股份有限公司 | 半導體裝置的製造方法 |
TWI749563B (zh) * | 2019-05-27 | 2021-12-11 | 日商信越化學工業股份有限公司 | 分子光阻組成物及使用其之圖案形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20030044717A1 (en) | 2003-03-06 |
KR100913135B1 (ko) | 2009-08-19 |
JP2003005376A (ja) | 2003-01-08 |
KR20090051028A (ko) | 2009-05-20 |
JP3912767B2 (ja) | 2007-05-09 |
KR20030023454A (ko) | 2003-03-19 |
KR100938803B1 (ko) | 2010-01-27 |
US6808862B2 (en) | 2004-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI225186B (en) | Positive photosensitive composition | |
Topa et al. | Moving towards a finer way of light-cured resin-based restorative dental materials: Recent advances in photoinitiating systems based on iodonium salts | |
JP2015062072A5 (zh) | ||
TW436491B (en) | Compositions for use in base-catalysed reactions, a process for curing said compostions and a process for photochemically generating bases in base catalysed polymeriaztion reactions | |
EP2781959A3 (en) | Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound | |
JP2002268223A5 (zh) | ||
JP2008268931A5 (zh) | ||
EP1975716A3 (en) | Positive resist composition and pattern forming method | |
JP2014041327A5 (zh) | ||
JP2009048182A5 (zh) | ||
AR078475A1 (es) | Procedimiento para preparar una forma cristalina | |
TW200804260A (en) | Sulphonium salt initiators | |
JP2007016214A5 (zh) | ||
JP2013501100A5 (zh) | ||
JP2010506942A5 (zh) | ||
TW591331B (en) | Cyclic sulfonium and sulfoxonium photoacid generators and photoresists comprising same | |
JP2003043690A5 (zh) | ||
TW200727081A (en) | Positive resist composition and pattern forming method using the same | |
TWI456003B (zh) | 新穎之聚醯亞胺聚矽氧及含其之感光性樹脂組成物以及圖型之形成方法 | |
JP2003107710A5 (zh) | ||
JP2013068948A5 (ja) | トナーおよびトナーの製造方法 | |
JP2013137517A5 (zh) | ||
JP2015507682A5 (zh) | ||
JP2002303980A5 (zh) | ||
RU2012137721A (ru) | Светочувствительная полимерная композиция, способы получения структуры и головка для подачи жидкости |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |