TW521325B - Seed layer deposition - Google Patents

Seed layer deposition Download PDF

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Publication number
TW521325B
TW521325B TW90126462A TW90126462A TW521325B TW 521325 B TW521325 B TW 521325B TW 90126462 A TW90126462 A TW 90126462A TW 90126462 A TW90126462 A TW 90126462A TW 521325 B TW521325 B TW 521325B
Authority
TW
Taiwan
Prior art keywords
item
patent application
substrate
seed layer
copper
Prior art date
Application number
TW90126462A
Other languages
English (en)
Chinese (zh)
Inventor
James G Shelnut
David Merricks
Oleh B Dutkewych
Charles R Shipley
Original Assignee
Shipley Co Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Llc filed Critical Shipley Co Llc
Application granted granted Critical
Publication of TW521325B publication Critical patent/TW521325B/zh

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/422Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
TW90126462A 2000-10-25 2001-10-25 Seed layer deposition TW521325B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24308600P 2000-10-25 2000-10-25

Publications (1)

Publication Number Publication Date
TW521325B true TW521325B (en) 2003-02-21

Family

ID=22917315

Family Applications (1)

Application Number Title Priority Date Filing Date
TW90126462A TW521325B (en) 2000-10-25 2001-10-25 Seed layer deposition

Country Status (3)

Country Link
JP (1) JP2002275639A (ko)
KR (1) KR20020032348A (ko)
TW (1) TW521325B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4663243B2 (ja) * 2004-01-13 2011-04-06 上村工業株式会社 無電解銅めっき浴
US8283051B2 (en) 2008-08-07 2012-10-09 Jx Nippon Mining & Metals Corporation Plated product having copper thin film formed thereon by electroless plating
JP5388191B2 (ja) * 2009-05-26 2014-01-15 Jx日鉱日石金属株式会社 貫通シリコンビアを有するめっき物及びその形成方法
JP5678698B2 (ja) * 2011-02-01 2015-03-04 トヨタ自動車株式会社 触媒微粒子の製造方法
JP5664370B2 (ja) * 2011-03-16 2015-02-04 トヨタ自動車株式会社 触媒微粒子の製造方法
JP6527030B2 (ja) * 2015-06-19 2019-06-05 東京エレクトロン株式会社 めっき処理方法及びめっき処理部品並びにめっき処理システム
US10297563B2 (en) * 2016-09-15 2019-05-21 Intel Corporation Copper seed layer and nickel-tin microbump structures

Also Published As

Publication number Publication date
KR20020032348A (ko) 2002-05-03
JP2002275639A (ja) 2002-09-25

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees