TW516228B - Optoelectronic component with many luminescent diode-chips - Google Patents
Optoelectronic component with many luminescent diode-chips Download PDFInfo
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- TW516228B TW516228B TW090120714A TW90120714A TW516228B TW 516228 B TW516228 B TW 516228B TW 090120714 A TW090120714 A TW 090120714A TW 90120714 A TW90120714 A TW 90120714A TW 516228 B TW516228 B TW 516228B
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- emitting diode
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- photovoltaic module
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- 230000005693 optoelectronics Effects 0.000 title claims description 3
- 235000012431 wafers Nutrition 0.000 claims description 41
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 125000006850 spacer group Chemical group 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Description
516228 五、發明説明(1 ) 本發明涉及一種依據申請專利範圍第1項前言之光電組 件。 此種組件通常已爲人所知,由於發光二極體晶片可發出 各種不同彩色之光,則此種組件可由來發出多彩色之光。 此外,由於發光二極體通常是配置在一個反射器中,則儘 管已發出之光具有多色性,此種組件之體積仍然較小。 在習知之組件中,光功率小於各別發光二極體晶片之光 功率之總和(s um )。 由先前技藝開始,本發明之目的是提供一種光功率已改 良之組件。 依據本發明,此目的以具有申請專利範圍第1項特徵之 組件來達成。 在本發明之組件中,發光二極體晶片之間之直接之視線 由遮光物所中斷,由發光二極體晶片所發出之光束中只有 一小部份由另一發光二極體晶片所吸收。藉由此種措施, 則發生損耗之主要原因即可消除。本發明之組件之光功率 因此等於各別發光二極體晶片之光功率和(s um)。 本發明其它有利之形式描述在申請專利範圍各附屬項 中。 本發明之實施例以下將依附圖來描述。 圖式簡單說明: 弟1圖可設有許多發光-^極體晶片之此種組件之俯視 圖。 第2圖沿著第1圖之切線I I - I I之橫切面。 516228 五、發明説明(2 ) 弟3圖 此種組件之另一'種貫施例之橫切面。 第1圖是此種組件1之俯視,其將依據第1,2圖來詳 述。此組件1具有外殼2,其中形成一種凹口 3,此凹口 3 (其具有傾斜之側壁4 )作爲凹口 3中所配置之發光二極體 晶片5用之反射器。發光二極體晶片5配置在接觸載體 6 (導線架)上,其連接元件7在側面突出於外殻2。此接觸 載體6有一部份是位於覆蓋層8 (其用來固定該接觸載體6 ) 下方。此外,此接觸載體6劃分成各別之登陸位置(用於發 光二極體晶片5)及各連接面10(用於連結各發光二極體晶 片5用之連結線)。連結各發光二極體晶片5用之連結線在 第1,2圖中未顯示。 各發光二極體晶片5典型上是以0.8mm之距離配置在外 殼2中,此種距離分別由發光二極體晶片5之中央起算。 在發光二極體晶片5用之各登陸位置9之間存在一種大約 0 . 2mm寬之間隙。在第1,2圖所示之實施例中係使用各登 陸位置9之間之接觸載體6中之間隙,中間壁面1 1具有橫 切面是楔形之壁面。各發光二極體晶片5之間之直接可見 接觸區由中間壁面1 1所中斷。因此,由各發光二極體晶片 5中之一所發光之光束未直接由另一發光二極體晶片5所吸 收。由於此一原因,組件1之光功率大約等於各別發光二 極體晶片5之光功率之和(s um )。 藉由中間壁面1 1之楔形之橫切面可確保:入射至中間壁 面1 1之光束可向外反射。中間壁面1 1之高度有利之方式 是超過發光二極體晶片5之高度至25%,較佳是10%。此 -4- 516228 五、發明説明(3 ) 種高度分別由凹口 3之底部開始測量。若中間壁面1 1之高 度低於發光二極體晶片5之高度,則各發光二極體晶片5 之間之視線未完全被中斷。反之,若此中間壁面1 1之高度 太大,則中間壁面1 1由於楔形之壁面而需要很多位置。發 光二極體晶片5之發射特性對於中間壁面1 1之高度因此有 決定性之影響。若發光二極體晶片5主要是向下發射,則 中間壁面1 1之高度可小於發光二極體晶片5之高度。 爲了製成此種組件1,則首先此接觸載體6首先須以熱塑 型塑膠或Du rop las [進行濺鍍,然後使發光二極體晶片5 設定在登陸位置9上且進行連結。凹口 3中然後以一種對 此發光二極體晶片5之光束是透明之樹脂塡入。 須注意:若此接觸載體6由完整之電路板所取代,則亦 可使用相同之方法。在此情況中,此電路板在發光二極體 晶片5之區域中設有一種外殼2,其濺鍍在電路板上。 第3圖是此種組件1之另一種實施形式之橫切面。其中 首先形成外殼2且在外殻2之表面上製成所需之導電軌 12。可使用所謂CIMID技術。在此種技術中,首先在外殼2 之表面上在水溶液中沈積一種薄金屬層。然後以雷射進行 結構化。這樣所結構化之金屬層以電鍍方式加厚。使用此 種方法之優點是:中間壁面1丨可塗佈一種反射用之金屬 層◦這樣可使此種組件1之效率提高。 符號之說明 1 .....組件 2 .....外殼 516228 五、發明説明(4 ) 3 .....凹口 4 .....側壁 5 .....發光二極體晶片 6 .....接觸載體 7 .....連接元件 8 .....覆蓋層 9 .....登陸位置 11 ....中間壁面 1 2 ....導電軌 -6-
Claims (1)
- 516228 六、申請專利範圍 第90 1 207 1 4號「具有多個發光二極體晶片之光電組件」 專利案 (9 1年1 〇月修正) 六申請專利範圍: 1. 一種光電組件,其具有許多相鄰地配置在一個共同 之反射器(3)中之發光二極體晶片(5) ’其特徵爲: 在二個發光二極體晶片(5 )之間分別配置一個中間壁 面(1 1 ) 〇 2. 如申請專利範圍第1項之光電組件,其中此反射器 (3)由塑膠外殼(2)中之凹口所形成。 3. 如申請專利範圍第1項之光電組件,其中該中間壁 面(1 1 )由反射用之隔離條所形成,其特別是具有楔 形之橫切面。 4. 如申請專利範圍第1至3項中任一項之光電組件, 其中發光二極體晶片(5)配置在接觸載體(6)上,接 觸載體(6)在反射器(3)(或凹口)之底部上延伸。 5. 如申請專利範圍第1至3項中任一項之光電組件, 其中發光二極體晶片(5)固定在導電軌(12)上,導電 軌(12)形成在反射器(3)上或形成在凹口中之外殼(2) 6. 如申請專利範圍第1至3項中任一項之光電組件, 其中反射器(3 )以一種對發光二極體晶片(5 )之光束 是透明之人造樹脂澆注而成。 7. 如申請專利範圍第1至3項中任一項之光電組件, 516228 六、申請專利範圍 其中至少三個發光二極體晶片(5)配置在反射器(3) 中,使這些發光二極體晶片(5 )配置在假想之多角形 之各角上,且中間壁面(11)在各發光二極體晶片(5) 之間以星形方式延伸。 8. 如申請專利範圍第1至3項中任一項之光電組件, 其中每二個發光二極體晶片(5)之間分別具有〇.5mm 至1 mm之間距,特別是0.8mm,這些間距分別由發 光二極體晶片(5 )之中央開始測量。 9. 如申請專利範圍第1至3項中任一項之光電組件, 其中該中間壁面(11)之高度較發光二極體晶片(5)之 高度多出25%,特別是10%。 10. 如申請專利範圍第7項之光電組件,其中該中間壁 面(11)之高度較發光二極體晶片(5)之高度多出25 %,特別是10%。 11. 如申請專利範圍第2或3項之光電組件’其中該中 間壁面(1 1 )在二個發光二極體晶片(5 )之間形成在塑 膠外殻(2 )上。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10041686A DE10041686A1 (de) | 2000-08-24 | 2000-08-24 | Bauelement mit einer Vielzahl von Lumineszenzdiodenchips |
Publications (1)
Publication Number | Publication Date |
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TW516228B true TW516228B (en) | 2003-01-01 |
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ID=7653703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090120714A TW516228B (en) | 2000-08-24 | 2001-08-23 | Optoelectronic component with many luminescent diode-chips |
Country Status (7)
Country | Link |
---|---|
US (1) | US7435997B2 (zh) |
EP (1) | EP1312117A1 (zh) |
JP (1) | JP2004517465A (zh) |
CN (1) | CN1447984A (zh) |
DE (1) | DE10041686A1 (zh) |
TW (1) | TW516228B (zh) |
WO (1) | WO2002017401A1 (zh) |
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-
2000
- 2000-08-24 DE DE10041686A patent/DE10041686A1/de not_active Withdrawn
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2001
- 2001-08-22 WO PCT/DE2001/003198 patent/WO2002017401A1/de active Search and Examination
- 2001-08-22 CN CN01814562.0A patent/CN1447984A/zh active Pending
- 2001-08-22 EP EP01971631A patent/EP1312117A1/de not_active Withdrawn
- 2001-08-22 US US10/362,554 patent/US7435997B2/en not_active Expired - Fee Related
- 2001-08-22 JP JP2002521368A patent/JP2004517465A/ja active Pending
- 2001-08-23 TW TW090120714A patent/TW516228B/zh not_active IP Right Cessation
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CN1447984A (zh) | 2003-10-08 |
US7435997B2 (en) | 2008-10-14 |
WO2002017401A1 (de) | 2002-02-28 |
DE10041686A1 (de) | 2002-03-14 |
JP2004517465A (ja) | 2004-06-10 |
US20040056265A1 (en) | 2004-03-25 |
EP1312117A1 (de) | 2003-05-21 |
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