WO2009000104A1 - Structure de boîtier de led - Google Patents
Structure de boîtier de led Download PDFInfo
- Publication number
- WO2009000104A1 WO2009000104A1 PCT/CN2007/001980 CN2007001980W WO2009000104A1 WO 2009000104 A1 WO2009000104 A1 WO 2009000104A1 CN 2007001980 W CN2007001980 W CN 2007001980W WO 2009000104 A1 WO2009000104 A1 WO 2009000104A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- package structure
- led
- substrate
- light
- led die
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 37
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 25
- 230000000903 blocking effect Effects 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 1
- 238000005192 partition Methods 0.000 abstract 2
- 239000000843 powder Substances 0.000 description 15
- 239000003086 colorant Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- the present invention relates to an LED package structure, and more particularly to an LED package structure having a plurality of LED chips integrated therein.
- light-emitting diodes have become an emerging light source with many advantages such as power saving, shock resistance, fast response, suitable mass production, and the like. Therefore, it has become common to use light-emitting diodes as indicators, and lighting products using light-emitting diodes as light sources have also become a trend.
- the electronic products are often required by a plurality of light-emitting diodes each emitting light of different wavelengths.
- each of the light-emitting diodes must be separated by a certain distance to prevent the emitted light from interfering with each other, thereby enabling the electronic product to simultaneously emit light of different wavelengths.
- such an arrangement will result in an increase in the volume of the electronic product, a reduction in design flexibility and a range of use. Accordingly, it is desirable to provide a light emitting diode package structure having a plurality of light emitting diode dies integrated to solve the above problems. '
- Another object of the present invention is to provide a light emitting diode package structure having a plurality of light emitting diode dies integrated therein.
- the LED package structure of the present invention comprises a stage, a substrate, a first LED die and a second LED die.
- the stage includes a blocking portion, a top surface and a bottom a surface, the stage forming a first recess on the top surface, the stage forming a second recess on the bottom surface, the first recess and the second recess connection.
- the substrate is embedded in the second recess.
- the first LED die and the second LED die are both disposed on the substrate and separated by the blocking portion.
- the stage can be a low temperature co-fired ceramic plate, a printed circuit board or a metal core circuit board.
- An adhesive may be filled between the substrate and the second recess to increase the adhesion between the substrate and the second recess.
- the diameter of the first recessed portion is smaller than the diameter of the second recessed portion, such that the second recessed portion has a top portion, and the substrate is coupled to the top portion.
- the substrate can also be electrically connected to the top.
- a circuit contact is disposed on the substrate, and a circuit contact is also disposed on the top. When the substrate is connected to the top, a circuit contact on the substrate is the top The upper circuit contacts are electrically connected.
- the substrate may be silicon, metal or a low temperature co-fired ceramic.
- the first LED die or the second LED die is a half-conductor LED or a semiconductor laser.
- the first LED die can emit a first wavelength of light
- the second LED die can emit a second wavelength of light
- the first wavelength of light is different from The second wavelength of light.
- the LED package structure may further comprise a package material.
- the encapsulating material may include a phosphor and cover the first LED chip, the second LED die, and the blocking portion.
- the LED package structure includes a first phosphor region and a second phosphor region.
- the first phosphor region is located above the first LED chip, and the first phosphor region is configured to convert a third wavelength of light emitted by the first LED die into a first Four wavelength light.
- the second phosphor region is located above the second LED chip, and the second phosphor region is configured to convert a fifth wavelength light emitted by the second LED die into a first Six wavelengths of light.
- the LED package structure may further comprise an encapsulation material. The encapsulating material covers the first phosphor powder region and the second phosphor powder region at the same time, and the phosphor powder of the first phosphor powder region is different from the second phosphor powder region.
- the LED package structure can simultaneously emit light of different wavelengths.
- a lens may be disposed on the packaging material, and a reflective layer may also be disposed on the first recess.
- the LED package structure of the present invention is configured to integrate the plurality of LED dies in the same package region by disposing the blocking portion between the first LED die and the second LED die. Reduces package area and provides the ability to simultaneously emit light of different wavelengths.
- FIG. 1A is a plan view of a light emitting diode package structure according to a preferred embodiment of the present invention.
- FIG. 1B is a cross-sectional view taken along line X-X of FIG.
- 1C is a cross-sectional view showing an LED package structure of an embodiment
- 1D is a cross-sectional view of an LED package structure of an embodiment
- FIG. 2 is a cross-sectional view showing a light emitting diode package structure of another preferred embodiment. Summary of the invention
- FIG. 1A is a top plan view of a light emitting diode package structure 1 in accordance with a preferred embodiment of the present invention.
- Fig. 1B is a cross-sectional view taken along line X-X of Fig. 1A.
- the LED package structure 1 of the present invention comprises a stage 12, a substrate 14, a first LED die 16 and a second LED die 18.
- the stage 12 includes a blocking portion 122, a top surface 124 and a bottom surface 126.
- the stage 12 defines a first recess 128 on the top surface 124.
- the stage 12 is at the bottom.
- a second recess 130 is formed on the surface 126.
- the first recessed portion 128 is connected to the second recessed portion 130.
- the substrate 14 is embedded in the second recess 130.
- the first LED die 16 and the second LED die 18 are disposed on the substrate 14 and are separated by the blocking portion 122.
- the stage 12 can be a low temperature co-fired ceramic plate, a printed circuit board, a metal core circuit board or other material that can interface with the substrate 14.
- the substrate 14 can be silicon, metal, low temperature co-fired ceramic or other material that can carry light emitting diode dies.
- An adhesive may be filled between the substrate 14 and the second recess 130 to increase the adhesion between the substrate 14 and the second recess 130.
- the first LED die 16 or the second LED die 18 is a semiconductor light emitting diode or a semiconductor laser.
- the diameter of the first recessed portion 128 connected to the second recessed portion 130 is smaller than the diameter of the second recessed portion 130 connected to the first recessed portion 128, so that the first recessed portion
- the second recess 130 has a top portion 1302.
- the substrate 14 is coupled to the top portion 1302.
- the top portion 1302 has the function of engaging the substrate 14 , and may also increase the adhesion area between the substrate 14 and the second recess portion 130 , that is, increase the attachment between the substrate 14 and the second recess 130 . Focus on.
- FIG. 1C is a cross-sectional view of an LED package structure 3 of an embodiment.
- the first LED pellets 16 and the second LED die 18 of the LED package structure 3 are directly wired to the substrate 14.
- the stage 12 has a circuit 132 (shown in phantom) and a plurality of circuit contacts (not shown) are formed on the top 1302.
- the circuit contacts are electrically connected to the substrate 14 by embedding the substrate 14 in the second recess 130 and abutting the top portion 1302.
- the first LED die 16 can emit a first wavelength.
- the second LED die 18 can emit a second wavelength of light.
- the first wavelength of light is different from the second wavelength of light. Therefore, the LED package structure 1 can emit light of different colors.
- the LED package structure 1 further includes an encapsulation material 20 .
- the encapsulating material 20 may include a phosphor powder and cover the first LED die 16 , the second LED die 18 , and the blocking portion 122 .
- the encapsulating material 20 containing the phosphor may convert light emitted by the first LED die 16 and the second LED die 18.
- FIG. 1D is a cross-sectional view of an LED package structure 5 of an embodiment.
- the LED package structure 5 further includes a lens 22 as compared to the preferred embodiment.
- the lens 22 is disposed on the encapsulating material 20.
- the LED package structure 5 further includes a reflective layer 24.
- the reflective layer 24 is located on the first recess 128. Therefore, the light emitting diode package structure 5 can increase the light collecting efficiency.
- it is necessary that the lens 22 is not attached to the encapsulating material 20.
- FIG. 2 is a cross-sectional view of a light emitting diode package structure 7 according to another preferred embodiment.
- the LED package structure 7 includes a first phosphor region and a second phosphor region (not shown).
- the first phosphor region is located above the first LED die 16.
- the second phosphor region is located above the second LED die 18.
- the first phosphor region is configured to convert a third wavelength of light emitted by the first LED die 16 into a fourth wavelength of light.
- the second phosphor region is configured to convert a fifth wavelength light emitted by the second LED die 18 into a sixth wavelength light.
- the LED package structure 7 can further include an encapsulation material 20'.
- the encapsulating material 20' covers both the first phosphor powder region and the second phosphor powder region. And the phosphor powder of the first phosphor region is different from the phosphor powder of the second phosphor region. Therefore, even if the third wavelength light emitted by the first LED die 16 is the same as the fifth wavelength light emitted by the second LED die 18, due to the first phosphor region The phosphor powder differs from the phosphor powder in the second phosphor powder region, and the light emitting diode package structure 7 can simultaneously emit light of different colors.
- the encapsulation material 20' can independently cover the first LED die 16 and the second LED die 18. Therefore, in an embodiment, the encapsulating material 20' on the first phosphor region may include a phosphor for converting the fourth wavelength light into a seventh wavelength light. Similarly, the encapsulating material 20' on the second phosphor region may include a phosphor for reconverting the sixth wavelength light into an eighth wavelength light. Thereby, even if the fourth wavelength light is the same as the sixth wavelength light, the LED package structure 7 can simultaneously emit different colors of light by adjusting the phosphor powder of the encapsulation material 20'.
- the encapsulating material 20 ′ of the LED package structure 7 does not cover the blocking portion 122 , so the light emitted by the first LED die 16 and the second LED die 18 are emitted. The light does not interfere with each other. Thereby, the LED package structure 7 can simultaneously emit bright and different colors of light.
- the encapsulation material 20 of the LED package structure 1 still covers the blocking portion 122, so the light emitted by the first LED die 16 and the light emitted by the second LED die 18 There is a partial blend, which in turn produces a softer effect. Thereby, the LED package structure 1 can emit light of a softer and different color.
- the light emitting diode package structure of the present invention can of course emit light of a single color, and the description will not be repeated.
- the LED package structure of the present invention is configured to integrate the plurality of LED dies in the same package region by disposing the blocking portion between the first LED die and the second LED die. Medium, thereby reducing the package area while providing the ability to simultaneously emit light of different wavelengths.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Abstract
L'invention concerne une structure de boîtier de LED (1). Cette structure de boîtier de LED (1) comprend un support (12), un substrat (14), une première LED (16) et une seconde LED (18). Le support (12) comprend une séparation (122), une surface supérieure (124) et une surface inférieure (126). Une première partie concave (128) est formée sur la surface supérieure (124). Une seconde partie concave (130) est formée sur la surface inférieure (126). La première partie concave (128) est en contact avec la seconde partie concave (130). Le substrat (14) est intégré dans la seconde partie concave (130). La première LED (16) et la seconde LED (18) sont montées sur le substrat (14). La séparation (122) sépare la première LED (16) et la seconde LED (18).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2007/001980 WO2009000104A1 (fr) | 2007-06-25 | 2007-06-25 | Structure de boîtier de led |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2007/001980 WO2009000104A1 (fr) | 2007-06-25 | 2007-06-25 | Structure de boîtier de led |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009000104A1 true WO2009000104A1 (fr) | 2008-12-31 |
Family
ID=40185150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2007/001980 WO2009000104A1 (fr) | 2007-06-25 | 2007-06-25 | Structure de boîtier de led |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2009000104A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011076020A1 (fr) * | 2009-12-21 | 2011-06-30 | Chen Chiuhuo | Buse d'aspiration inverse étanche |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1447984A (zh) * | 2000-08-24 | 2003-10-08 | 奥斯兰姆奥普托半导体有限责任公司 | 带有多个发光二极管芯片的元件 |
US20040173810A1 (en) * | 2003-03-03 | 2004-09-09 | Ming-Der Lin | Light emitting diode package structure |
CN1832167A (zh) * | 2005-03-07 | 2006-09-13 | 西铁城电子股份有限公司 | 发光器件和使用所述发光器件的照明装置 |
CN1874014A (zh) * | 2005-05-31 | 2006-12-06 | 新灯源科技有限公司 | 半导体发光元件封装结构 |
-
2007
- 2007-06-25 WO PCT/CN2007/001980 patent/WO2009000104A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1447984A (zh) * | 2000-08-24 | 2003-10-08 | 奥斯兰姆奥普托半导体有限责任公司 | 带有多个发光二极管芯片的元件 |
US20040173810A1 (en) * | 2003-03-03 | 2004-09-09 | Ming-Der Lin | Light emitting diode package structure |
CN1832167A (zh) * | 2005-03-07 | 2006-09-13 | 西铁城电子股份有限公司 | 发光器件和使用所述发光器件的照明装置 |
CN1874014A (zh) * | 2005-05-31 | 2006-12-06 | 新灯源科技有限公司 | 半导体发光元件封装结构 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011076020A1 (fr) * | 2009-12-21 | 2011-06-30 | Chen Chiuhuo | Buse d'aspiration inverse étanche |
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