TW479310B - Capacitor structure and method of making same - Google Patents

Capacitor structure and method of making same Download PDF

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Publication number
TW479310B
TW479310B TW089125390A TW89125390A TW479310B TW 479310 B TW479310 B TW 479310B TW 089125390 A TW089125390 A TW 089125390A TW 89125390 A TW89125390 A TW 89125390A TW 479310 B TW479310 B TW 479310B
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TW
Taiwan
Prior art keywords
plate
scope
patent application
item
layer
Prior art date
Application number
TW089125390A
Other languages
English (en)
Chinese (zh)
Inventor
Jennifer D Lynch
Wilbur D Pricer
Anthony K Stamper
Stephen A St Onge
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW479310B publication Critical patent/TW479310B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
TW089125390A 2000-03-31 2000-11-29 Capacitor structure and method of making same TW479310B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54109900A 2000-03-31 2000-03-31

Publications (1)

Publication Number Publication Date
TW479310B true TW479310B (en) 2002-03-11

Family

ID=24158167

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089125390A TW479310B (en) 2000-03-31 2000-11-29 Capacitor structure and method of making same

Country Status (4)

Country Link
JP (1) JP2001313372A (ko)
KR (1) KR20010094954A (ko)
CN (1) CN1169222C (ko)
TW (1) TW479310B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009248A (ja) * 2000-06-26 2002-01-11 Oki Electric Ind Co Ltd キャパシタおよびその製造方法
KR100808558B1 (ko) * 2002-05-16 2008-02-29 매그나칩 반도체 유한회사 엠아이엠 캐패시터 형성방법
US6794262B2 (en) * 2002-09-23 2004-09-21 Infineon Technologies Ag MIM capacitor structures and fabrication methods in dual-damascene structures
US6784478B2 (en) 2002-09-30 2004-08-31 Agere Systems Inc. Junction capacitor structure and fabrication method therefor in a dual damascene process
US6876028B1 (en) * 2003-09-30 2005-04-05 International Business Machines Corporation Metal-insulator-metal capacitor and method of fabrication
JP5027431B2 (ja) 2006-03-15 2012-09-19 ルネサスエレクトロニクス株式会社 半導体装置
US8237191B2 (en) * 2009-08-11 2012-08-07 International Business Machines Corporation Heterojunction bipolar transistors and methods of manufacture
CN102709270A (zh) * 2012-05-23 2012-10-03 上海宏力半导体制造有限公司 Mim电容器及其形成方法

Also Published As

Publication number Publication date
CN1169222C (zh) 2004-09-29
CN1319893A (zh) 2001-10-31
KR20010094954A (ko) 2001-11-03
JP2001313372A (ja) 2001-11-09

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees