KR101044612B1 - 반도체 소자의 제조 방법 - Google Patents
반도체 소자의 제조 방법 Download PDFInfo
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- KR101044612B1 KR101044612B1 KR1020040055932A KR20040055932A KR101044612B1 KR 101044612 B1 KR101044612 B1 KR 101044612B1 KR 1020040055932 A KR1020040055932 A KR 1020040055932A KR 20040055932 A KR20040055932 A KR 20040055932A KR 101044612 B1 KR101044612 B1 KR 101044612B1
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- Prior art keywords
- electrode layer
- insulating film
- metal wiring
- interlayer insulating
- forming
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000010408 film Substances 0.000 claims abstract description 57
- 239000003990 capacitor Substances 0.000 claims abstract description 36
- 239000011229 interlayer Substances 0.000 claims abstract description 36
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 229910004156 TaNx Inorganic materials 0.000 claims description 2
- 238000007667 floating Methods 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- -1 Ta 2 O 5 Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
- H01L27/0682—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors comprising combinations of capacitors and resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7687—Thin films associated with contacts of capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (5)
- 소정의 패턴으로 제1 금속 배선이 형성된 반도체 기판 상에 층간 절연막을 형성하는 단계;상기 층간 절연막을 식각하여 커패시터 영역 및 일반 배선 영역에는 상기 제1 금속 배선이 노출되는 제1 다마신 패턴을 형성하면서, 박막 저항 영역에는 트렌치 형태의 제2 다마신 패턴을 형성하는 단계;상기 제1 및 제2 다마신 패턴에 상기 층간 절연막보다 낮은 높이로 제2 금속 배선을 형성하는 단계;상기 제2 금속 배선 상부의 상기 다마신 패턴에 절연막 및 전극층을 적층 구조로 형성하여, 상기 커패시터 영역에는 상기 제2 금속 배선, 상기 절연막 및 상기 전극층으로 이루어진 커패시터를 형성하고, 상기 박막저항 영역에는 상기 전극층으로 이루어진 박막 저항을 형성하는 단계를 포함하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서, 상기 전극층을 형성한 후,상기 전극층을 포함한 전체 구조 상에 상부 층간 절연막을 형성하는 단계;상기 커패시터 영역에서는 상기 전극층이 노출되고, 상기 일반 배선 영역에서는 상기 제2 금속 배선이 노출되며, 상기 박막 저항 영역에서는 상기 전극층이 노출되는 다마신 패턴을 상기 상부 층간 절연막에 형성하는 단계; 및상기 상부 층간 절연막의 상기 다마신 패턴에 제3 금속 배선을 형성하는 단계를 더 포함하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서,상기 제1 금속 배선 또는 상기 제2 금속 배선이 구리로 형성된 반도체 소자의 제조 방법.
- 제 1 항에 있어서,상기 전극층이 TiN 또는 TaNx로 형성되는 반도체 소자의 제조 방법.
- 제 1 항에 있어서,상기 절연막이 SiN, Al2O3, Ta2O5 또는 HfO 중 선택된 어느 하나로 형성하거나 두개 이상 적층된 구조로 형성되는 반도체 소자의 제조 방법.
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KR1020040055932A KR101044612B1 (ko) | 2004-07-19 | 2004-07-19 | 반도체 소자의 제조 방법 |
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KR1020040055932A KR101044612B1 (ko) | 2004-07-19 | 2004-07-19 | 반도체 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20060007174A KR20060007174A (ko) | 2006-01-24 |
KR101044612B1 true KR101044612B1 (ko) | 2011-06-29 |
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KR1020040055932A KR101044612B1 (ko) | 2004-07-19 | 2004-07-19 | 반도체 소자의 제조 방법 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9190402B2 (en) | 2013-08-30 | 2015-11-17 | Samsung Electronics Co., Ltd. | Semiconductor device comprising capacitor and method of manufacturing the same |
US9299659B2 (en) | 2013-08-19 | 2016-03-29 | Samsung Electronics Co., Ltd. | Semiconductor devices including multiple interconnection structures |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102070094B1 (ko) | 2012-12-13 | 2020-01-29 | 삼성전자주식회사 | 저항 전극을 갖는 반도체 소자 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020055174A (ko) * | 2000-12-28 | 2002-07-08 | 박종섭 | 아날로그 소자의 제조 방법 |
KR20030002800A (ko) * | 2001-06-29 | 2003-01-09 | 주식회사 하이닉스반도체 | 아날로그 반도체 소자의 폴리 실리콘 저항 제조 방법 |
KR20040050514A (ko) * | 2002-12-10 | 2004-06-16 | 주식회사 하이닉스반도체 | 아날로그 소자의 제조방법 |
JP2004193602A (ja) | 2002-12-02 | 2004-07-08 | Chartered Semiconductor Mfg Ltd | 銅による後工程(beol)技術用の金属−絶縁体−金属(mim)コンデンサ及び金属レジスタを製造する方法 |
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- 2004-07-19 KR KR1020040055932A patent/KR101044612B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020055174A (ko) * | 2000-12-28 | 2002-07-08 | 박종섭 | 아날로그 소자의 제조 방법 |
KR20030002800A (ko) * | 2001-06-29 | 2003-01-09 | 주식회사 하이닉스반도체 | 아날로그 반도체 소자의 폴리 실리콘 저항 제조 방법 |
JP2004193602A (ja) | 2002-12-02 | 2004-07-08 | Chartered Semiconductor Mfg Ltd | 銅による後工程(beol)技術用の金属−絶縁体−金属(mim)コンデンサ及び金属レジスタを製造する方法 |
KR20040050514A (ko) * | 2002-12-10 | 2004-06-16 | 주식회사 하이닉스반도체 | 아날로그 소자의 제조방법 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9299659B2 (en) | 2013-08-19 | 2016-03-29 | Samsung Electronics Co., Ltd. | Semiconductor devices including multiple interconnection structures |
US9190402B2 (en) | 2013-08-30 | 2015-11-17 | Samsung Electronics Co., Ltd. | Semiconductor device comprising capacitor and method of manufacturing the same |
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KR20060007174A (ko) | 2006-01-24 |
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