TW478059B - Dynamic semiconductor-memory device and method to initialize a dynamic semiconductor-memory device - Google Patents

Dynamic semiconductor-memory device and method to initialize a dynamic semiconductor-memory device Download PDF

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Publication number
TW478059B
TW478059B TW89100323A TW89100323A TW478059B TW 478059 B TW478059 B TW 478059B TW 89100323 A TW89100323 A TW 89100323A TW 89100323 A TW89100323 A TW 89100323A TW 478059 B TW478059 B TW 478059B
Authority
TW
Taiwan
Prior art keywords
layer
etching
patent application
item
scope
Prior art date
Application number
TW89100323A
Other languages
English (en)
Chinese (zh)
Inventor
Volker Weinrich
Manfred Engelhardt
Walter Diener
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of TW478059B publication Critical patent/TW478059B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
TW89100323A 1999-01-13 2000-01-11 Dynamic semiconductor-memory device and method to initialize a dynamic semiconductor-memory device TW478059B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19901002A DE19901002B4 (de) 1999-01-13 1999-01-13 Verfahren zum Strukturieren einer Schicht

Publications (1)

Publication Number Publication Date
TW478059B true TW478059B (en) 2002-03-01

Family

ID=7894116

Family Applications (1)

Application Number Title Priority Date Filing Date
TW89100323A TW478059B (en) 1999-01-13 2000-01-11 Dynamic semiconductor-memory device and method to initialize a dynamic semiconductor-memory device

Country Status (3)

Country Link
DE (1) DE19901002B4 (de)
TW (1) TW478059B (de)
WO (1) WO2000042646A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426962B (zh) * 2009-03-09 2014-02-21 Hitachi High Tech Corp A cleaning device for a mask member and a cleaning method, and an organic electroluminescent display

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10036809B4 (de) * 2000-07-28 2004-03-25 Robert Bosch Gmbh Vorrichtung und Verfahren zur Reinigung und/oder Behandlung von Oberflächen
FR2833752A1 (fr) * 2002-05-28 2003-06-20 Commissariat Energie Atomique Procede de realisation de metallisations de section triangulaire en microelectronique

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0482247A1 (de) * 1990-10-26 1992-04-29 International Business Machines Corporation Verfahren zur Herstellung einer integrierten Schaltungsstruktur mit einer dicht mehrschichtigen Metallisierungsstruktur
JP2985396B2 (ja) * 1991-07-16 1999-11-29 日本電気株式会社 ドライエッチング後の後処理方法
JPH06212193A (ja) * 1992-12-21 1994-08-02 Nitto Chem Ind Co Ltd レジスト剥離剤除去用洗浄剤
JP3690619B2 (ja) * 1996-01-12 2005-08-31 忠弘 大見 洗浄方法及び洗浄装置
US5820692A (en) * 1996-01-16 1998-10-13 Fsi Interntional Vacuum compatible water vapor and rinse process module
US5911836A (en) * 1996-02-05 1999-06-15 Mitsubishi Gas Chemical Company, Inc. Method of producing semiconductor device and rinse for cleaning semiconductor device
JP2836562B2 (ja) * 1996-02-08 1998-12-14 日本電気株式会社 半導体ウェハのウェット処理方法
JP4386968B2 (ja) * 1996-12-24 2009-12-16 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 半導体基板から残留物をストリッピングするための１，３−ジカルボニル化合物キレート剤を含む処方物
DE19728474A1 (de) * 1997-07-03 1999-01-07 Siemens Ag Elektrodenanordnung
EP0907203A3 (de) * 1997-09-03 2000-07-12 Siemens Aktiengesellschaft Strukturierungsverfahren
DE19860084B4 (de) * 1998-12-23 2005-12-22 Infineon Technologies Ag Verfahren zum Strukturieren eines Substrats

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426962B (zh) * 2009-03-09 2014-02-21 Hitachi High Tech Corp A cleaning device for a mask member and a cleaning method, and an organic electroluminescent display

Also Published As

Publication number Publication date
DE19901002A1 (de) 2000-07-27
WO2000042646A1 (de) 2000-07-20
DE19901002B4 (de) 2005-09-22

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