478059 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（1 ) 本發明涉及半導體技術之領域且是有關於一種層之結 構化的方法。 為了製造微電子組件（例如半導體記億體），多個不同 的材料必須被結構化，這些'材料例如以層的形式施加至 基礎基板上。因此該即將結構化的層須以適當的蝕刻遮 罩來遮覆且接著須施予一種蝕刻媒介。這樣會由於物理 及/或化學方式的侵蝕而使即將結構化的層自基礎基板 之未被蝕刻遮罩所遮覆之區域中被去除。但在蝕刻時由 於蝕刻媒介的侵蝕而使蝕刻遮罩之一部分被去除。結果 導致該層不可再被尺寸精確地蝕刻。這顯現於例如該即 將結構化的層之傾斜的蝕刻側面。但這種傾斜的蝕刻側 面應儘可能地避免，以減少由其所造成之額外的空間需 求。此外，由於傾斜的蝕刻方法而造成的尺寸擴張也可 觀察到。 金屬層和氧化物金屬層之蝕刻引起一些特別的困難。 例如以一種具有高的物理成分來進行的蝕刻方法來蝕刻 鉑時，吾人可得到相當陡峭的蝕刻側面，但同時會在蝕 刻遮罩上形成物質沈積現象，這些沈積很難去除。因此 ,除了該物理成分之外，須另外施加一種活性化學成分 予該蝕刻方法中，以便在蝕刻過程中壓抑或去除物質之 沈積。這種蝕刻方法敘逑於例如：日本應用物理雜誌 (Japanese Journal of Applied Physics)1996年第 35 期第2 5 0 1至2 5 0 4頁，由Yoo等人所作之”在氬/氯/氧電 漿中鉑之蝕刻過程中一種蝕刻傾斜面之控制’’（Control 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------^訂---------線赢 (請先閱讀背面之注意事項再填寫本頁) _ _ 478059 A7 B7 五、發明說明（） of Etch Slope during Etching of P t in A r / C1 2 /〇 2 Plasmas)， J. Vac. Sci. Technol.雜誌 1997年 9 月/ 10月第B15(5)期第1747至1751頁，由Τ· Shibano等人 所作之"以氬/鹵素混合氣體電漿蝕刻鉑時之側壁沈積 薄膜"（Sidewall deposition film in platinum etching w i t h A r / h a 1 0 g e n in i x e d q a s p 1 a s id a s )以及第 2 6 期 E s s d e r c 1996年第631至634頁由Park等人所作之"在電漿性耦合之 電漿中鉛之蝕刻"（Platinium Etching in an Inductively Coupled Plasma)等專業論文中。在這些專業論文中鉑 在氬電漿中被各向異性地蝕刻，其中氯離子或氟離子添 加於氬電漿中作為化學成分以便降低物質之沈積。但在 這方法中會不利地産生非常傾斜的鉛之蝕刻側面，這樣 會使蝕刻結構不希望地變大。 在上述兩份專業論文中避免了在純氬電漿中進行鉑之 蝕刻，這是因為在蝕刻中所生成之物質沈積物非常難被 去除。由於該物質沈積物與卽將形成結構之層是由同樣 的物質所構成，所以例如此種沈積物之濕式化學方式的 去除過程中也可能會對此層造成不希望的侵蝕。 也可能在極高之的溫度下來對鉑進行蝕刻，這是因為 鉑在高溫下可與蝕刻氣體構成一種揮發性化合物。然而 此處所需的先決條件是須使用一種由溫度相對較穩定之 遮罩材料所構成的所諝硬遮罩。但該硬遮罩之隨後所須 的整平同時會導致裸露出之基板亦被整平並且因而使該 即將處理之結構之拓樸（topology)形狀不期望地增高。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -i Bm— ϋ n ϋ ·ϋ ϋβ-，· ϋ 1_ ^1 ϋ_1 1 Mtmmm I * -ί · 系 經濟部智慧財產局員工消費合作社印製 Α7 ^__Β7_ 五、發明說明（3 ) (請先閱讀背面之注意事項再填寫本頁) 在日本專利案號JP 5-21405A中也不使用此種具有較 高物理成分之蝕刻方法，以防止難以去除之物質沈積物 ^形成。以CF4來對鉑進行化學蝕刻時在所使用之硬遮 睾（由自旋式（spin-on)玻璃構成）之側面邊緣上産生薄 膜，但這種薄膜可以較容易地以刷子且藉助於噴射式水 柱來去除。該薄膜以機械方式藉由刷子而由表面去除。 噴射式水柱只用來將鬆脫的薄膜沖走。因為此處不使用 物理性的蝕刻方法，所以根據日本專利案號J P 5 - 2 1 4 0 5 A 的方法可産生較平坦的蝕刻側面。此外，硬遮罩在事後 才去除會導致拓樸形狀之尖銳化。 因此本發明之目的是：提供一種層之結構化的方法， 其中産生儘可能陡峨的蝕刻側面而不會對即將結構化之 層産生進一步之侵蝕且本發明指出一種進行這種方法所 用的設備。 根據本發明，藉由一種層之結構化的方法以下列步驟 達成了上逑目的： -備置一種基板，此基板具有至少一個長久性可結構化 之層； 經濟部智慧財產局員工消費合作社印製 用層在物的 使該可的平 •，在在少定整 罩法得至穩被 遮方使刻較已 刻之以蝕性的 蝕分，種槭佈 的成刻此機分 成刻蝕，由的新 構蝕行經定重 所性進，固泛 料理層面生廣 材物該側産之 質高對刻上層 漆較來蝕板該 種刻下之基含 一 蝕況 _ 該‘包 加有狀陡在其 施具的常及 ， 上種罩非以物 層一遮成上積 該由刻形層沈 在藉蝕中該質 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478059 A7 B7_ 五、發明說明（4 ) 材料因此是一種蝕刻殘渣；以及 -該層接著以一種指向該層的有機溶劑之流體射束來清 (請先閱讀背面之注意事項再填寫本頁) 洗，藉由該流體射束可將蝕刻殘渣和可能有的蝕刻遮 罩儘可能地從該層去除。 藉助於本發明可將蝕刻殘渣以及可能殘留於基板和已 結構化之層上的蝕刻遮罩藉由指向其之流體射束儘可能 不留殘渣地清除。因此利用了下逑狀況：即，蝕刻殘渣 被指向其之流體射束之壓力而由基板中去除。待別是在 該流體射束之流速夠高時固著的蝕刻殘渣也可被去除。 該流體射束較佳是透過至少一個噴嘴來形成，流體在高 壓下經由噴嘴而發出且因此形成較尖鋭之束狀的高流速 之高壓流體射束。 經濟部智慧財產局員工消費合作社印製 經由研究結果已令人驚異地證實··藉助較佳之成束狀 的流體射束，則強固附著之與即將蝕刻之層或基板相連 接的蝕刻殘渣可自層之表面被去除。這種蝕刻殘渣通常 是由非晶形（amorphous)的或多晶的混合物（其由層之殘 渣成份和蝕刻遮罩成份所構成）所構成，上逑這些成份 係機槭式地與即將結構化之層固定地相連結的。此種層 之殘渣（也就是物質沈積物）至少一部分在蝕刻過程中沈 澱於蝕刻遮罩之側面遴緣和蝕刻遮罩之上側上且在該處 與部份鬆脱之靠近表面的蝕刻遮罩層一起形成一種多成 分的牢固的層，因此可稱之為生成之蝕刻殘渣或物質沈 積物。這些殘渣以化學方式選擇性地不會對卽將結構化 之層造成侵蝕時是難以去除的，因為此種物質沈積物以 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478059 A7 ____B7 五、發明說明（5 ) 化學方式而被整平時同時也會侵蝕此種即將結構化之層 。雖然以下將論及該層上之蝕刻殘渣，但亦應一同包括 此種在附著基板上的蝕刻殘渣。 藉由流體射束而使蝕刻殘渣儘可能地以物理方式而被 去除。因此，該已結構化之層上之化學方式的侵蝕即可 排除。對於該層較佳是使用儘可能是鈍性的流體。 藉由本發明的方法可使該層幾乎只以具有物理性成分 的蝕刻方法來蝕刻且由此而可獲得該已被蝕刻之層之非 常陡峭的蝕刻側面（7 0°〜9 0 ° )。但此種於蝕刻時（例 如純的氬濺鍍）所生成之非所希望的位於蝕刻遮罩上之 物質沈積物根據本發明隨後須儘可能沒有殘渣地而且簡 單地藉由流體射束來清除。在蝕刻時使用活性氣體是沒 有必要的，活性氣體將導致一些具有許多小刻面的側面 且因而提高了由該層所蝕刻出之結構之橫向的大小。 較佳是使用一種對於該即將結構化之層在化學上儘可 能不會造成侵蝕的流體。這樣在藉由該流體射束來清洗 時即不會使該已結構化之層被整平。確切而言這樣可保 持尺寸之固定。在該流體中可以輔助性地包含一種侵蝕 該蝕刻遮罩或蝕刻該遮罩殘留物所用的物質。這樣會在 原本純粹的物理性清洗成分之外另外加入了一種化學性 成分，但此種化學成份只會造成蝕刻遮罩或蝕刻遮罩殘 留物之剝蝕。較有利的是例如使用N -甲基吡咯烷酮（N -methylpyrrolidon)〇 另一可選擇之方式是在蝕刻殘渣和物質沈積物去除之 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ----^—--—訂--------- 經濟部智慧財產局員工消費合作社印製 478059 A7 B7 五、發明說明（6 ) (請先閱讀背面之注意事項再填寫本頁) 前將蝕刻遮罩之至少一部分去除掉。該蝕刻殘渣藉此可 在某一程度上失去其由該蝕刻遮罩而來的機槭性支撐且 因此能夠輕易地被該流體射束所去除。該蝕刻遮罩可以 例如藉由蝕刻遮罩材料之焚化成灰或藉由濕式化學方式 之剝蝕而去除。此外，有利的是一種已被蝕刻之層之最 終的清洗，以去除仍附著的殘渣。這最終的清除較佳是 以超音波或超高音波來達成。 以本發明的方法能夠使金屬層，金屬氧化物層或此種 至少由一金屬層和一含有金屬氧化物的層所構成之堆昼 以非常陡峭的輪廓侧面而被結構化。因此較佳是使用本 方法於：金屬層之結構化，這些金屬層特別是由下列金 屬所構成：鉑，釕，銥，銶，鼦，鐵，鈷，鎳；由銥之 氧化物和釕之氧化物所構成的層之結構化；以及於半導 體記億體之製造非晶形和多晶之含有金屬氧化物的層之 結構化，這些層是用來製造半導體記億體。 根據本發明該目的之第二個部分是藉由自此層中去除 該蝕刻殘渣所用之設備來達成，其中 -該設備僳可防污染地與一個蝕刻室相連接， 經濟部智慧財產局員工消費合作社印製 -具有此種即將蝕刻之層的基板可以自蝕刻室導入該設 備中， -該設備具有至少一個可對準該層的噴嘴以形成至少一 個已對準的流體射束，其用來自該層和基板中去除該 蝕刻殘渣和可能存在的蝕刻遮罩，其中該噴嘴與該層 是可相對移動的且該噴嘴適合用來形成至少20巴（bar) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478059 A7 B7 五、發明說明（7 ) 的高壓流體射束。 根據本發明，在該設備中於該層被蝕刻後可藉由流體 射束來清洗該層，而不會使該層於蓮輸至該設備時受到 有害的環境所影響。為要達成這目的，本發明的設備是 以防污染之方式而與蝕刻室相連接，這例如可藉由適當 之可密封的突緣支件來達成。藉由此種突緣支件同時也 可將該位於基板上的層自蝕刻室轉蓮至該設備。具有已 結構化之該層的基板因此不需由蝕刻室和清洗室所構成 的單元中取出即可被有利地蝕刻和清洗。 由於該設備與蝕刻室之間無污染的連接，因此也可防 止蝕刻室本身於取出基板時受到污染。有利的方式是： 該至少一個噴嘴和該具有已結構化之層的基板配置成可 相對地移動，使得整個層都可被自噴嘴所發出的流體射 束所清洗。為要改善清洗的效果可以同時以多個噴嘴和 流體射束來操作。此時讓該基板旋轉以使得該層能自所 有的方向中被清洗，這樣是有意義的。 本發明以下將依據一個實施例來説明且概括地顯示於 圖式中。圖式簡單說明： 第la至le圖.·根據本發明之方法的各別的程式步驟。 第2至3圖：殘留於一個層堆疊上的蝕刻殘渣。 第4至5圖：本發明的設備。 在第1圖中顯示一個基板5，基板5上側安置有一個 由氣化物層或氮化物層10，一個阻障層15和一個鉑層20 所構成的層結構。該铂層20和阻障層15在此一同表示此 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)478059 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (1) The present invention relates to the field of semiconductor technology and relates to a layered structure method. In order to make microelectronic components (such as semiconductors), several different materials must be structured. These 'materials' are applied to the base substrate, for example, in the form of layers. The layer to be structured must therefore be covered with a suitable etching mask and then an etching medium must be applied. This will cause physical and / or chemical attack to remove the structured layer from the uncovered area of the base substrate. However, part of the etching mask is removed due to the etching medium during the etching. As a result, this layer can no longer be etched with exact size. This appears, for example, on the etched side of the bevel that is to be structured. However, such inclined etched sides should be avoided as much as possible to reduce the additional space requirements caused by them. In addition, dimensional expansion due to the oblique etching method is also observed. The etching of the metal layer and the oxide metal layer causes some special difficulties. For example, when etching platinum with an etching method with a high physical composition, we can get quite steep sides, but at the same time, a substance deposition phenomenon will be formed on the etching mask, which is difficult to remove. Therefore, in addition to the physical component, an active chemical component must be applied to the etching method in order to suppress or remove the deposition of substances during the etching process. This etching method is described in, for example, the Japanese Journal of Applied Physics, No. 35, 1996, pp. 2501 to 2504, made by Yoo et al. "Under argon / chlorine / oxygen Control of an etched slant surface during the etching of platinum in plasma '' (Control This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) -------- ^ Order --- ------ Line Win (Please read the notes on the back before filling this page) _ _ 478059 A7 B7 V. Description of the invention () of Etch Slope during Etching of P t in A r / C1 2 / 〇2 Plasmas ), J. Vac. Sci. Technol. Magazine September / October 1997 Issue B15 (5) pp. 1747 to 1751, by T. Shibano et al. &Quot; Etching Plasma with Ar / Halogen Plasma Plasma (Sidewall deposition film in platinum etching with A r / ha 1 0 gen in ixedqasp 1 as id as) and Issue 26 Essderc 1996 pages 631 to 634 by Park et al. &Quot;; Lead Etching in Plasma Coupled Plasma " (Platinium Etching in an Inductively Coupled Pl asma) and other professional papers. In these professional papers, platinum is anisotropically etched in an argon plasma, where chloride or fluoride ions are added to the argon plasma as a chemical component in order to reduce the deposition of substances. But in this method It will disadvantageously produce very inclined etched sides of lead, which will undesirably make the etched structure larger. In the two above-mentioned professional papers, the etching of platinum in pure argon plasma was avoided because it was in the etching The resulting material deposits are very difficult to remove. Since the layers of the material deposits and plutonium that will form a structure are composed of the same material, for example, the wet chemical removal process of such deposits may also affect the This layer causes unwanted erosion. It is also possible to etch platinum at extremely high temperatures, because platinum can form a volatile compound with the etching gas at high temperatures. However, the prerequisite required here is that it must be used A hard mask made of a relatively stable temperature mask material. However, the subsequent leveling of the hard mask will also cause the exposed substrate to be exposed. Flattened and thus undesirably increasing the topology shape of the structure to be processed. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) -i Bm— ϋ n ϋ · ϋ ϋβ- ， · ϋ 1_ ^ 1 ϋ_1 1 Mtmmm I * -ί · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Α7 ^ __ Β7_ V. Description of Invention (3) (Please read the precautions on the back before filling this page) Japanese Patent No. JP 5-21405A Such an etching method with a higher physical composition is not used in order to prevent the formation of deposits that are difficult to remove. When CF4 is used to chemically etch platinum, a thin film is created on the side edges of the hard testicle (spin-on glass) used, but this film can be easily brushed and sprayed. Water column to remove. The film is mechanically removed from the surface by a brush. The spray water column is only used to wash away the loose film. Since no physical etching method is used here, the method according to Japanese Patent No. J P 5-2 1 4 0 5 A can produce a relatively flat etched side surface. In addition, removing the hard mask after the fact can cause sharpening of the topological shape. It is therefore an object of the present invention to provide a method of structuring a layer in which etched sides that are as steep as possible without further eroding the layer to be structured and the invention indicates an apparatus for performing such a method . According to the present invention, a layered structured method is used to achieve the above objectives in the following steps:-A substrate is provided, the substrate has at least one permanent structured layer; printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Use the layer of the material to make this possible, in order to obtain a stable cover in the method of shading, so that the etching has been etched with erosive etch points, the maple seed engraving is divided into etch, The new structure of the corrosion process is based on the focus of advancement, solid pan cooking, the quality of the raw materials on the side is high, and the top lacquer is more etched than the etched base. The type of etched base contains an erosion condition. Steep in its application, the upper cover is not covered by the physical layer, and the upper layer should be sunk by the engraved layer. The quality of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297). (%) 478059 A7 B7_ 5. Description of the invention (4) The material is therefore an etching residue; and-the layer is then cleaned with a fluid beam of an organic solvent directed at the layer (please read the precautions on the back before filling this page) ) Wash, the etching residue and Some etching mask can be removed from the cover layer as much as possible. By means of the invention, the etching residues and the etching masks which may remain on the substrate and the structured layer can be removed by leaving a fluid beam directed at them as far as possible without residues. Therefore, a burial condition is used: that is, the etching residue is removed from the substrate by the pressure of the fluid beam directed at it. Alternatively, the fixed etching residue can be removed when the flow velocity of the fluid beam is sufficiently high. The fluid jet is preferably formed through at least one nozzle, and the fluid is emitted through the nozzle under high pressure and thus forms a relatively sharp, high-velocity high-pressure fluid jet in the shape of a bundle. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the results of the research have been surprisingly confirmed. With the aid of a better bundled fluid beam, the etching residues that are strongly attached to the layer or substrate to be etched can be removed from The surface of the layer is removed. This etching residue is usually composed of an amorphous or polycrystalline mixture (consisting of the residue component of the layer and the etch mask component). These components are mechanically and soon to be structured. The layers are fixedly connected. At least a part of the residue of this layer (that is, the material deposit) is deposited on the side of the etching mask and the upper side of the etching mask during the etching process, and the etching mask near the surface is loosened there. Together, the layers form a multi-component, robust layer, and can therefore be referred to as generated etch residue or deposits of matter. These residues are chemically selective and will not be difficult to remove when the structured layer is eroded, because the deposits of this substance apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) at this paper size ) 478059 A7 ____B7 V. Description of the invention (5) When chemically leveled, it will also erode this layer that is about to be structured. Although the etching residues on this layer will be discussed below, such etching residues on the attached substrate should also be included together. The etch residue is removed as physically as possible by the fluid beam. Therefore, chemically etched material on the structured layer can be eliminated. It is preferred for this layer to use a fluid that is as passive as possible. By the method of the present invention, the layer can be etched almost only by an etching method having a physical composition, and thus a very steep etched side (70 ° to 90 °) of the etched layer can be obtained. However, such undesired deposits of material on the etching mask, which are generated during etching (eg pure argon sputtering), must then be removed, as far as possible, without residue and simply by means of a fluid jet, according to the invention. . It is not necessary to use an active gas in the etching. The active gas will cause some sides with many facets and thus increase the lateral size of the structure etched by this layer. It is preferred to use a fluid that is chemically non-corrosive to the layer to be structured as much as possible. This does not flatten the structured layer when cleaning by the fluid jet. This keeps the size fixed. A substance that can erode the etch mask or etch the residue of the mask may be included in the fluid. This will add a chemical component to the original purely physical cleaning component, but this chemical component will only cause the erosion of the etching mask or the residue of the etching mask. It is more advantageous to use N-methylpyrrolidon, for example. Another alternative is to apply the Chinese National Standard (CNS) A4 (210 X 297 mm) to the paper size for the removal of etching residues and material deposits. Li) (Please read the notes on the back before filling out this page) ---- ^ -------- Order --------- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 478059 A7 B7 V. Invention Note (6) (Please read the precautions on the back before filling this page) Remove at least a part of the etching mask. The etching residue can thereby lose its mechanical support from the etching mask to a certain extent and can therefore be easily removed by the fluid beam. The etch mask can be removed, for example, by incineration of the etch mask material to ash or by wet chemical ablation. In addition, it is advantageous to have a final cleaning of the etched layer in order to remove residues still attached. This final removal is preferably achieved by ultrasound or ultra-high sound. The method according to the invention enables a metal layer, a metal oxide layer or a stack of at least one metal layer and a metal oxide-containing layer to be structured with a very steep profile side. It is therefore preferred to use this method for the structuring of metal layers, which are especially composed of the following metals: platinum, ruthenium, iridium, osmium, osmium, iron, cobalt, nickel; iridium oxide and ruthenium The structuring of oxide-containing layers; and the structuring of amorphous and polycrystalline metal oxide-containing layers in semiconductors, which are used to make semiconductors. The second part of the purpose according to the present invention is achieved by the equipment used to remove the etching residue from this layer, where-the equipment can be connected to an etching chamber in a pollution-proof manner and is consumed by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative printed-a substrate with such a layer to be etched can be introduced into the device from the etching chamber,-the device has at least one nozzle that can be aligned with the layer to form at least one aligned fluid jet The layer and the substrate are used to remove the etching residue and possible etching masks, wherein the nozzle and the layer are relatively movable and the nozzle is suitable for forming at least 20 bar. The paper size is applicable to the Chinese national standard (CNS ) A4 size (210 X 297 mm) 478059 A7 B7 V. High-pressure fluid beam of invention description (7). According to the present invention, after the layer is etched in the device, the layer can be cleaned by a fluid beam without causing the layer to be affected by a harmful environment when the layer is transported to the device. To achieve this, the apparatus of the present invention is connected to the etching chamber in a manner that prevents contamination, which can be achieved, for example, by a suitable sealable flange support. With this flange support, the layer on the substrate can also be transferred from the etching chamber to the device. The substrate having the structured layer is thus advantageously etched and cleaned without having to be taken out of a unit composed of an etching chamber and a cleaning chamber. Since the device and the etching chamber have a pollution-free connection, the etching chamber itself can also be prevented from being contaminated when the substrate is taken out. Advantageously, the at least one nozzle and the substrate having the structured layer are configured to be relatively movable so that the entire layer can be cleaned by a fluid beam emitted from the nozzle. To improve the cleaning effect, multiple nozzles and fluid jets can be operated simultaneously. It makes sense to rotate the substrate at this time so that the layer can be cleaned in all directions. The present invention will be explained below and shown generally in the drawings according to an embodiment. Brief description of the drawings: Figures la to le. · Individual program steps of the method according to the invention. Figures 2 to 3: Etching residues remaining on a layer stack. Figures 4 to 5: Device of the invention. A substrate 5 is shown in FIG. 1. On the substrate 5, a layer structure composed of a gaseous layer or a nitride layer 10, a barrier layer 15 and a platinum layer 20 is disposed. The platinum layer 20 and the barrier layer 15 are collectively indicated here. This paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)
-i^i ϋ ϋ·· BB-Hi ϋ ϋ 1 ^ ^ ϋ -ϋ ϋ I ϋ ϋ a··— I k -ί 矣I 經濟部智慧財產局員工消費合作社印製 478059 A7 B7 五、發明說明（） 種卽將結構化之層。構成該阻障層的是一個大約100毫 微米（rim)厚之氮化鈦層和一値位於其下方約2 0毫微米厚 之鈦層。該銷層2 0約為2 5 0毫微米厚。在該鈉層2 0上方 緊接著施加一個蝕刻遮罩2 5。該蝕刻遮罩2 5可由一種能 以微影術（卩11〇1:〇111:11(^^?1^)來結構化的材料（例如， 光阻）所構成，因此能夠輕易地使此蝕刻遮罩被結構化。 如果使用對光線不敏_的遮罩材料，則該蝕刻遮罩2 5之 結構化僳使用另一個能以微影術來結構化之層來達成◊ 隨後對鉛層20和阻障層15進行蝕刻，其較佳是在MERIE (Magnetically Enhanced Reactive Ion Etching磁性 促進式活性離子蝕刻）反應器中完成，其中該製程室首先 抽成真空至大約10毫托（m Torr)之壓力。之後鉑層20在 純氬電漿中於大約50 °C時蝕刻約3分鐘之久，其中所用 的磁場具有約0.008T (8 0Gauss，高斯）且維持此電漿所 需的功率大約是750瓦待（Watt)。氬蝕刻程序是一種近 乎純物理式的蝕刻過程，因為鉑只能由加速的氬離子所 帶走。由於阻障層15相對於鉑層2 0而言是以各種不同之 強度利用氬（Ar)來進行蝕刻，所以該阻障層此處同時也 用作蝕刻停止層，以使得該鉑層2 0之可能出現的空間上 不均勻的蝕刻現象不會導致不均勻的蝕刻拓樸（topology) 形狀。 鉑層2Q蝕刻之後，阻障層15於純氯之電漿中被蝕刻約 3 〇秒。因為氯在已結構化之鉑的側壁上的蝕刻侵蝕只是 -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------.訂--------•線- 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（10) 較有利的是依材質不同而選擇一種20巴和150巴（bar)之 間的壓力。就鉛而言可選擇約80巴（bar)。 (請先閱讀背面之注意事項再填寫本頁) 流體射束45中所使用之流體較佳是N -甲基吡咯烷酮 (N-Methylpyrrolidon, NMP)溶液，其具有約 δΟΤ 的溫 度。在此溫度時特別能夠自鉑層20溶解掉有可能殘存之 軸刻遮罩殘渣。為了調整流體射束45之溫度，該噴嘴40 須設有一個加熱裝置50。 為了使通常是一種晶圓之基板5的所有區域都被流體 射束45所清洗，該基板5須大約以2D0赫（Hz)之速率來 旋轉。同時該流體射束45須自基板5之内部區域移動到 外部區域。有利的是使流體射束4 5往基板5外部區域移 動的速度減小，以便在每一回轉中考慮到此種被流體射 束45所清洗之基板5之面積。清洗過程在典型狀況下持 續約4分鐘。 當噴嘴40與基板距離約1至3公分且噴射角度約90。 時相對於基板表面可得到優良的清洗結果。 經濟部智慧財產局員工消費合作社印製 本發明的方法之一大優點在於：衝擊於該表面上的流 體能較容易地被隨後的沖洗步驟以去（de)離子之水完全 無殘留地自基板5排除。因此，本方法之成本特別低廉。 最後，可選擇性地進行濕式化學方式的清洗及/或以 軟刷（Scrubber)來清洗以去除可能殘留的微粒以及殘渣 。這較佳是於已強烈稀釋的氫氟酸或已稀釋的氨（Anioniak) 之存在下以超音波或超高音波來達成。 該流體射束之清洗效果是源自於多個互補的成分。主 _ 1 2_ 本紙張尺度適用^國國家標準（CNS)A4規格（210 X 297公釐) '" 478059 A7 B7 11 五、發明說明（） 要作用是藉由流體射束之衝量作用所達成。在該層表面 上所生長之蝕刻殘渣被破壞且因此而能夠被清洗此種層 表面所用之流體（其沿著該表面而構成一種流體流）所移 去。藉由基板上或基板表面上由旁掠過之流體流而産生 一種摩擦力，其可移去上述之蝕刻殘渣。該摩擦力是取 決於該流體分子的速度，因此，由於此種在層表面直接 相鄰處中靜止不動之流體層而可使該摩擦力不再足以去 除這些強力固著的較小的蝕刻殘渣。如果相對應地提高 流體射束45之流動速度，則這樣可導致兩種可支撐該清 洗作用的效果。其中一種效果係流體之分子能以高速滑 過此種層表面而由此導致較高的摩擦力。而另一種效果 是該流體之分子自流體射束45以高速衝擊基板表面，使 該流體之分子至少在該區域内可到達此種附著於該表面 上之幾乎完全靜止之流體膜（film)而在該處也同樣可導 入一種流體流（flow)。此種靜止之流體流之厚度因此減 小了，使得只在短暫的去除層表面之後就存在一種強力 之移除蝕刻殘渣用之流體流。藉由溫熱的有機溶劑以溶 去漆質殘留物也是很重要的。-i ^ i ϋ ··· BB-Hi ϋ ϋ 1 ^ ^ ϋ -ϋ ϋ I ϋ ϋ a ·· — I k -ί 矣 I Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 478059 A7 B7 V. Description of the invention () Seeds will be structured layers. Forming the barrier layer is a titanium nitride layer having a thickness of about 100 nanometers (rim) and a titanium layer having a thickness of about 20 nanometers below it. The pin layer 20 is approximately 250 nm thick. Immediately above the sodium layer 20, an etch mask 25 is applied. The etch mask 25 can be made of a material (for example, photoresist) that can be structured by lithography (卩 11〇1: 〇111: 11 (^^? 1 ^), so it can be easily made. The etch mask is structured. If a masking material that is not sensitive to light is used, the etch mask 25 is structured 僳 using another layer that can be structured by lithography to achieve ◊ subsequently the lead layer 20 and the barrier layer 15 are etched, which is preferably completed in a MERIE (Magnetically Enhanced Reactive Ion Etching) reactor, wherein the process chamber is first evacuated to about 10 millitorr (m Torr) The platinum layer 20 is then etched in a pure argon plasma at about 50 ° C for about 3 minutes, where the magnetic field used is about 0.008T (80 Gauss, Gauss) and the power required to maintain this plasma is about It is 750 Watts. The argon etching process is an almost purely physical etching process, because platinum can only be carried away by accelerated argon ions. Since the barrier layer 15 is different from the platinum layer 20 in various ways, Different strengths are etched using argon (Ar), so this barrier It is also used as an etch stop layer at this time, so that the spatially uneven etching phenomenon of the platinum layer 20 may not cause uneven etching topology. After the platinum layer 2Q is etched, the barrier Layer 15 is etched in pure chlorine plasma for about 30 seconds. Because the etching corrosion of chlorine on the side wall of structured platinum is only -10-, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 (Mm) (Please read the notes on the back before filling out this page) --------. Order -------- • Line-Printed by A7, B7, Employee Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Explanation of the invention (10) It is more advantageous to choose a pressure between 20 bar and 150 bar (bar) according to different materials. For lead, about 80 bar can be selected. (Please read the precautions on the back first (Fill in this page again) The fluid used in the fluid beam 45 is preferably an N-Methylpyrrolidon (NMP) solution, which has a temperature of about δΟΤ. At this temperature, it is particularly capable of being dissolved from the platinum layer 20 It is possible that the remaining shaft engraved to mask the residue. In order to adjust the temperature of the fluid beam 45, the spray 40 A heating device 50 must be provided. In order to clean all areas of the substrate 5 which is usually a wafer with a fluid beam 45, the substrate 5 must be rotated at approximately 2D0 Hertz (Hz). At the same time the fluid The beam 45 must be moved from the inner region to the outer region of the substrate 5. It is advantageous to reduce the velocity of the fluid beam 45 to the outer region of the substrate 5 so that the fluid beam 45 is considered in each revolution The area of the substrate 5 to be cleaned. The cleaning process typically lasts about 4 minutes. When the distance between the nozzle 40 and the substrate is about 1 to 3 cm and the spray angle is about 90. In this case, excellent cleaning results can be obtained relative to the substrate surface. One of the great advantages of the method of printing the present invention by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics is that the fluid impacting the surface can be easily washed by the subsequent washing step to remove (de) ionized water from the substrate without residue. 5 excluded. Therefore, the cost of this method is particularly low. Finally, wet chemical cleaning and / or scrubbing can be used to selectively remove particles and residues that may remain. This is preferably achieved in the presence of strongly dilute hydrofluoric acid or dilute ammonia (Anioniak) by means of ultrasound or supersonic waves. The cleaning effect of the fluid jet is derived from a plurality of complementary components. Main _ 1 2_ This paper size applies to the national standard (CNS) A4 specification (210 X 297 mm) '" 478059 A7 B7 11 V. Description of the invention () The main effect is achieved by the impulse of the fluid beam . Etching residues growing on the surface of the layer are destroyed and can therefore be removed by the fluid used to clean the surface of the layer, which forms a fluid flow along the surface. A frictional force is generated by a bypassed fluid flow on or on the substrate surface, which removes the above-mentioned etching residue. The frictional force is dependent on the velocity of the fluid molecules. Therefore, the frictional force is no longer sufficient to remove these strong and fixed small etching residues due to the fluid layer that is stationary in the immediate vicinity of the layer surface. . If the flow velocity of the fluid jet 45 is increased correspondingly, this can lead to two effects that can support the cleaning effect. One effect is that the molecules of the fluid can slide across the surface of such layers at high speeds, resulting in higher friction. Another effect is that the molecules of the fluid impinge on the surface of the substrate from the fluid beam 45 at a high speed, so that the molecules of the fluid can reach such a nearly completely stationary fluid film attached to the surface at least in the region, and A fluid flow can likewise be introduced here. The thickness of this stationary fluid stream is thus reduced, so that after a brief removal of the surface of the layer, there is a powerful fluid stream for removing the etching residue. It is also important to dissolve the lacquer residue with a warm organic solvent.
本發明的方法也可用於一種層堆疊5 5之共同的結構化 過程中，此種層堆璺55例如由一個阻障層15，一値銷層 20以及一個含有金屬氧化物的層6ϋ所構成。這種層堆叠 55例如用來製造半導體。此種含有金屬氧化物的層6〇較 佳是由一般性形成為ΑΒΟχ或BOx之材料所構成，其中A 表示鋇、緦、鈮、鉛、錯、鑭、鉍、鈣和鉀這群金屬中 -1 3 - 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製The method of the present invention can also be used in a common structuring process of a layer stack 55. Such a layer stack 55 is composed of, for example, a barrier layer 15, a pin layer 20, and a layer 6 containing metal oxides. . This layer stack 55 is used, for example, to make semiconductors. Such a metal oxide-containing layer 60 is preferably composed of a material generally formed as Αβχ or BOx, where A represents a group of metals including barium, hafnium, niobium, lead, tungsten, lanthanum, bismuth, calcium, and potassium. -1 3-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
478059 A7478059 A7
五、發明說明（) 之至少一種金屬，B表示鈦、釕或鉅而〇表示氧。X像 在2和1 2之間。這些物質類型的代表例如緦-鉍-鉋酸鹽 (S r B i 2 T a 2 0 9 )和氣化鉅（T a 2 0 5 )。 於層堆疊55蝕刻時所産生的物質沈積物30可於蝕刻遮 罩2 5焚化成灰後彼此輕微地傾斜。此顯示於第2圖中 丨 Ο 位於層堆叠55之下的此層1M其較佳是由二氣化砂或氮 化矽所構成，於層堆疊55蝕刻時同時用作蝕刻停止層。 第3圖顯示的是由於另一値鉑層62和含有金屬氧化物 之層6G—起蝕刻時所生成的物質沈積物30。 鉑層2D或層堆昼55之結構化較佳是在一個顯示於第5 圖中之清洗室65中來進行。清洗室65具有一値閘門7〇以 導入基板75於清洗室65中。又，清洗室65是與一嫡此處 未近一步描繪的幫浦（pump)經由一値吸管80而相連接。 經由該幫浦可將清洗物質（流體射束）吸出而節省資源地 再導入至清洗過程中。基板7 5係置於一個可加熱的基板 托架85上，其由一個加熱器90所加熱。在製程室65中另 外還安置了一些可移動的噴嘴4(),其能夠網點狀地或放 ------I--------------Γ 訂 i·-------線 (請先閱讀背面之注咅？事項再填寫本頁} 經濟部智慧財產局員工消費合作社印製 板渣管 基殘導 洗刻力 清蝕壓 地除該 狀去0, 4 嘴 噴 入 導 而 管 導 力 壓 由 經 傺 流 的 用 嘴 噴 和 5 9 器 容 液 貯 像 就 由 像 樣 室 〇 洗 熱清 p UbU 力種 體此 流的 該置 對裝 便之 以性 繞造 圍創 所具 5 是 置處 裝此 熱在 加 ， 之圖 式 4 形第 圈據 熱根 一S ιρτ 室 刻 蝕 與 是 Η 組 板 基 具站 輸 傳 群個 的一 謂過 所經 種站 一 入 成輸 合 個 整一 ο 1 0 中 其 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公蓳） 經濟部智慧財產局員工消費合作社印製 478059 A7 B7_ 13 五、發明說明（） 存在著已降低之壓力）而被輸送至蝕刻室110中。於蝕刻 之後，遮罩在一個所謂的帶狀（S t r i p )室1 2 0中被去除且 經由另一値壓力大約與大氣壓力相同之傳輸站116而轉 送至清洗室65。只要不需此種使遮罩焚化成灰的步驟， 就不需要帶狀室120且上逑之另一個傳輪站116即能以乾 式条統來構成。 符號之説明 5 .......基板 10......氧化物層或氮化物層 15.....•阻障層/氮化鈦層 20......金屬層/鉑層 25......蝕刻遮罩 30......蝕刻殘渣/物質沈積物 32......蝕刻側面 35......殘渣 4 0......噴嘴 45......流體射束 50......加熱裝置 55......層堆疊 6 〇......含有金屬氧化物的層 62......另一金屬層/鉑層 65......清洗室 70......閘門 75......基板 -15- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)5. Description of the invention At least one metal of (), B represents titanium, ruthenium or giant and 0 represents oxygen. The X image is between 2 and 12. Representatives of these substance types are, for example, osmium-bismuth- planate (S r B i 2 T a 2 0 9) and gasification giant (T a 2 0 5). The substance deposits 30 generated during the etching of the layer stack 55 may be slightly inclined to each other after the etching masks 25 are incinerated to ash. This is shown in FIG. 2. This layer 1M, which is located below the layer stack 55, is preferably composed of two gasified sands or silicon nitride, and is also used as an etch stop layer when the layer stack 55 is etched. Fig. 3 shows a substance deposit 30 generated during etching due to another rhenium platinum layer 62 and a metal oxide-containing layer 6G. The structuring of the platinum layer 2D or the layer stack 55 is preferably performed in a cleaning chamber 65 shown in FIG. The cleaning chamber 65 has a shutter 70 for introducing the substrate 75 into the cleaning chamber 65. In addition, the cleaning chamber 65 is connected to a pump (not shown here), which is connected via a suction pipe 80. Through this pump, the cleaning substance (fluid beam) can be sucked out, and it can be reintroduced into the cleaning process in a resource-saving manner. The substrate 75 is placed on a heatable substrate holder 85, which is heated by a heater 90. In the process chamber 65, there are also some movable nozzles 4 (), which can be placed in a dot-like manner or placed. ------- line (Please read the note on the back? Matters and then fill out this page} Printed board slag tube base residue guide cleaning force of the Intellectual Property Bureau employee consumer cooperative of the Ministry of Economy to remove the condition 0, 4 nozzles are sprayed into the tube, and the tube is guided by the nozzle. The nozzle is sprayed through the nozzle and the liquid storage image is stored in the sample room by the sample room. 0 Wash the heat and p UbU. According to the nature of the circumvention, the 5th place is to install this heat, the 4th shape of the circle is based on the thermal root of a S ιρτ chamber etching and the transmission and transmission of the base plate station. The number of papers that have been passed is one for each input. 1 0 The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 gong). It is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 478059 A7 B7_ 13 5. Description of the invention () There is a reduced pressure) and it is conveyed into the etching chamber 110. After the etching, the mask is removed in a so-called strip-shaped chamber 120 and transferred to the cleaning chamber 65 via another transfer station 116 having a pressure of approximately the same as atmospheric pressure. As long as the step of incineration of the mask into ash is not required, the belt-like chamber 120 and the other transfer station 116 on the upper side can be constructed in a dry manner. Explanation of symbols 5... Substrate 10. Oxide layer or nitride layer 15.... Barrier layer / titanium nitride layer 20... Metal layer / Platinum layer 25 ... etch mask 30 ... etch residue / substance deposit 32 ... etch side 35 ... residue 4 0 ..... Nozzle 45 ... Fluid beam 50 ... Heating device 55 ... Layer stack 6 〇 ... Layer 62 containing metal oxide ... .Another metal layer / platinum layer 65 ... cleaning room 70 ... gate 75 ... substrate -15- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling this page)
478059 A7 _B7 14 五、發明說明（） 80......吸管 85......基板托架 9 0......加熱器 9 5......貯液容器 100.....壓力導管 110.....蝕刻室 115 .....傳輸室 116 .....另一傳輸站 120.....帶狀室 (請先閱讀背面之注意事項再填寫本頁) --------訂---------線· 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）478059 A7 _B7 14 V. Description of the invention () 80 ... straw 85 ... substrate holder 9 0 ... heater 9 5 ... liquid storage container 100 ..... Pressure conduit 110 ..... Etching chamber 115 ..... Transmission chamber 116 ..... Another transmission station 120 ..... Strip chamber (Please read the precautions on the back first (Fill in this page again.) -------- Order --------- Line · Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)