TW365025B - Manufacturing method for gallium nitride crystal - Google Patents

Manufacturing method for gallium nitride crystal

Info

Publication number
TW365025B
TW365025B TW086112176A TW86112176A TW365025B TW 365025 B TW365025 B TW 365025B TW 086112176 A TW086112176 A TW 086112176A TW 86112176 A TW86112176 A TW 86112176A TW 365025 B TW365025 B TW 365025B
Authority
TW
Taiwan
Prior art keywords
gallium nitride
nitride crystal
manufacturing
carbide film
substrate
Prior art date
Application number
TW086112176A
Other languages
English (en)
Inventor
Masaaki Yuri
Tetsuzo Ueda
Takaaki Baba
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Application granted granted Critical
Publication of TW365025B publication Critical patent/TW365025B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW086112176A 1996-08-27 1997-08-25 Manufacturing method for gallium nitride crystal TW365025B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22489996A JP3179346B2 (ja) 1996-08-27 1996-08-27 窒化ガリウム結晶の製造方法

Publications (1)

Publication Number Publication Date
TW365025B true TW365025B (en) 1999-07-21

Family

ID=16820905

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112176A TW365025B (en) 1996-08-27 1997-08-25 Manufacturing method for gallium nitride crystal

Country Status (4)

Country Link
US (1) US5928421A (zh)
JP (1) JP3179346B2 (zh)
CN (1) CN1255583C (zh)
TW (1) TW365025B (zh)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2003532298A (ja) * 2000-04-26 2003-10-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光半導体素子
DE10020464A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
WO2001084640A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh LUMINESZENZDIODENCHIP AUF DER BASIS VON GaN UND VERFAHREN ZUM HERSTELLEN EINES LUMINESZENZDIODENBAUELEMENTS
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
KR100366706B1 (ko) * 2000-04-27 2003-01-09 삼성코닝 주식회사 질화갈륨 단결정 기판의 제조방법
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
EP2276059A1 (en) * 2000-08-04 2011-01-19 The Regents of the University of California Method of controlling stress in gallium nitride films deposited on substrates
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US6653166B2 (en) * 2001-05-09 2003-11-25 Nsc-Nanosemiconductor Gmbh Semiconductor device and method of making same
US6784074B2 (en) 2001-05-09 2004-08-31 Nsc-Nanosemiconductor Gmbh Defect-free semiconductor templates for epitaxial growth and method of making same
MY141883A (en) 2001-06-06 2010-07-16 Ammono Sp Zoo Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride
PL207400B1 (pl) 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
PL225235B1 (pl) 2001-10-26 2017-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Objętościowy monokryształ azotkowy oraz jego zastosowanie jako podłoże do epitaksji
CN1300901C (zh) * 2001-10-26 2007-02-14 波兰商艾蒙诺公司 使用氮化物块状单晶层的发光元件结构
US20030198795A1 (en) * 2002-04-17 2003-10-23 Grant William K. Modular material design system and method
AU2002354463A1 (en) 2002-05-17 2003-12-02 Ammono Sp.Zo.O. Bulk single crystal production facility employing supercritical ammonia
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
PL225427B1 (pl) * 2002-05-17 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego
KR100460504B1 (ko) * 2002-10-17 2004-12-08 한국전자통신연구원 실리콘 나노점을 갖는 탄화 실리콘 박막의 제조 방법
JP3905824B2 (ja) * 2002-11-25 2007-04-18 大阪府 単結晶窒化ガリウム局在基板及びその製造方法
US7410539B2 (en) * 2002-12-11 2008-08-12 Ammono Sp. Z O.O. Template type substrate and a method of preparing the same
PL224993B1 (pl) * 2002-12-11 2017-02-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
CN100423300C (zh) 2004-04-29 2008-10-01 奥斯兰姆奥普托半导体有限责任公司 辐射发射的半导体芯片及其制造方法
WO2005121415A1 (en) * 2004-06-11 2005-12-22 Ammono Sp. Z O.O. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
JP4913375B2 (ja) * 2005-08-08 2012-04-11 昭和電工株式会社 半導体素子の製造方法
JP5202839B2 (ja) * 2006-12-25 2013-06-05 東京エレクトロン株式会社 成膜装置および成膜方法
CN102061519A (zh) * 2010-11-25 2011-05-18 中山大学 Si衬底GaN基薄膜的生长方法
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
US9917156B1 (en) 2016-09-02 2018-03-13 IQE, plc Nucleation layer for growth of III-nitride structures

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US5563428A (en) * 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
KR100199346B1 (ko) * 1995-04-04 1999-06-15 김영환 반도체 소자의 전하저장전극 형성방법
US5759908A (en) * 1995-05-16 1998-06-02 University Of Cincinnati Method for forming SiC-SOI structures

Also Published As

Publication number Publication date
US5928421A (en) 1999-07-27
JP3179346B2 (ja) 2001-06-25
CN1177655A (zh) 1998-04-01
JPH1070079A (ja) 1998-03-10
CN1255583C (zh) 2006-05-10

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