TW356621B - Integrated circuit device having a biag circuit for an enhancement transistor circuit - Google Patents
Integrated circuit device having a biag circuit for an enhancement transistor circuitInfo
- Publication number
- TW356621B TW356621B TW086116255A TW86116255A TW356621B TW 356621 B TW356621 B TW 356621B TW 086116255 A TW086116255 A TW 086116255A TW 86116255 A TW86116255 A TW 86116255A TW 356621 B TW356621 B TW 356621B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- enhancement transistor
- biag
- resistors
- connection point
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06575597A JP3657079B2 (ja) | 1997-03-19 | 1997-03-19 | エンハンスメント型トランジスタ回路のバイアス回路を有する集積回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW356621B true TW356621B (en) | 1999-04-21 |
Family
ID=13296174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086116255A TW356621B (en) | 1997-03-19 | 1997-11-03 | Integrated circuit device having a biag circuit for an enhancement transistor circuit |
Country Status (6)
Country | Link |
---|---|
US (1) | US5889426A (zh) |
JP (1) | JP3657079B2 (zh) |
KR (1) | KR100262467B1 (zh) |
CN (1) | CN1193845A (zh) |
DE (1) | DE19738177A1 (zh) |
TW (1) | TW356621B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6275100B1 (en) * | 1996-09-13 | 2001-08-14 | Samsung Electronics Co., Ltd. | Reference voltage generators including first and second transistors of same conductivity type and at least one switch |
DE19827702C2 (de) * | 1998-06-22 | 2000-06-08 | Siemens Ag | Verstärkerschaltung mit aktiver Arbeitspunkteinstellung |
DE59907268D1 (de) | 1998-08-11 | 2003-11-13 | Infineon Technologies Ag | Verfahren zur Herstellung eines Mikromechanischen Sensors |
US6516182B1 (en) * | 1998-12-21 | 2003-02-04 | Microchip Technology Incorporated | High gain input stage for a radio frequency identification (RFID) transponder and method therefor |
US6509825B1 (en) * | 1999-09-24 | 2003-01-21 | Microchip Technology Incorporated | Integrated circuit device having a self-biased, single pin radio frequency signal input |
DE10306052A1 (de) * | 2003-02-13 | 2004-09-23 | Infineon Technologies Ag | Hochfrequenzverstärker mit Arbeitspunkteinstellungsschaltung |
US7852136B2 (en) * | 2008-08-12 | 2010-12-14 | Raytheon Company | Bias network |
JP5646360B2 (ja) * | 2011-02-04 | 2014-12-24 | 株式会社東芝 | 半導体装置 |
JP6440642B2 (ja) * | 2016-01-25 | 2018-12-19 | 三菱電機株式会社 | 低雑音増幅回路及び低雑音増幅器 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2186452B (en) * | 1986-02-07 | 1989-12-06 | Plessey Co Plc | A bias current circuit,and cascade and ring circuits incorporating same |
FR2641626B1 (fr) * | 1989-01-11 | 1991-06-14 | Sgs Thomson Microelectronics | Generateur de tension de reference stable |
US5126653A (en) * | 1990-09-28 | 1992-06-30 | Analog Devices, Incorporated | Cmos voltage reference with stacked base-to-emitter voltages |
EP0499673B1 (de) * | 1991-02-21 | 1996-05-08 | Siemens Aktiengesellschaft | Regelschaltung für einen Substratvorspannungsgenerator |
US5552740A (en) * | 1994-02-08 | 1996-09-03 | Micron Technology, Inc. | N-channel voltage regulator |
-
1997
- 1997-03-19 JP JP06575597A patent/JP3657079B2/ja not_active Expired - Fee Related
- 1997-08-08 US US08/908,720 patent/US5889426A/en not_active Expired - Lifetime
- 1997-09-02 DE DE19738177A patent/DE19738177A1/de not_active Ceased
- 1997-09-30 CN CN97121114A patent/CN1193845A/zh active Pending
- 1997-11-03 TW TW086116255A patent/TW356621B/zh active
-
1998
- 1998-01-14 KR KR1019980000796A patent/KR100262467B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE19738177A1 (de) | 1998-09-24 |
JPH10261922A (ja) | 1998-09-29 |
CN1193845A (zh) | 1998-09-23 |
US5889426A (en) | 1999-03-30 |
JP3657079B2 (ja) | 2005-06-08 |
KR100262467B1 (ko) | 2000-08-01 |
KR19980079606A (ko) | 1998-11-25 |
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