TW356621B - Integrated circuit device having a biag circuit for an enhancement transistor circuit - Google Patents

Integrated circuit device having a biag circuit for an enhancement transistor circuit

Info

Publication number
TW356621B
TW356621B TW086116255A TW86116255A TW356621B TW 356621 B TW356621 B TW 356621B TW 086116255 A TW086116255 A TW 086116255A TW 86116255 A TW86116255 A TW 86116255A TW 356621 B TW356621 B TW 356621B
Authority
TW
Taiwan
Prior art keywords
circuit
enhancement transistor
biag
resistors
connection point
Prior art date
Application number
TW086116255A
Other languages
English (en)
Inventor
Masayuki Kawakami
Yoshiyasu Tsuruoka
Hideo Abe
Original Assignee
Fujito Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujito Ltd filed Critical Fujito Ltd
Application granted granted Critical
Publication of TW356621B publication Critical patent/TW356621B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
TW086116255A 1997-03-19 1997-11-03 Integrated circuit device having a biag circuit for an enhancement transistor circuit TW356621B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06575597A JP3657079B2 (ja) 1997-03-19 1997-03-19 エンハンスメント型トランジスタ回路のバイアス回路を有する集積回路装置

Publications (1)

Publication Number Publication Date
TW356621B true TW356621B (en) 1999-04-21

Family

ID=13296174

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086116255A TW356621B (en) 1997-03-19 1997-11-03 Integrated circuit device having a biag circuit for an enhancement transistor circuit

Country Status (6)

Country Link
US (1) US5889426A (zh)
JP (1) JP3657079B2 (zh)
KR (1) KR100262467B1 (zh)
CN (1) CN1193845A (zh)
DE (1) DE19738177A1 (zh)
TW (1) TW356621B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6275100B1 (en) * 1996-09-13 2001-08-14 Samsung Electronics Co., Ltd. Reference voltage generators including first and second transistors of same conductivity type and at least one switch
DE19827702C2 (de) * 1998-06-22 2000-06-08 Siemens Ag Verstärkerschaltung mit aktiver Arbeitspunkteinstellung
DE59907268D1 (de) 1998-08-11 2003-11-13 Infineon Technologies Ag Verfahren zur Herstellung eines Mikromechanischen Sensors
US6516182B1 (en) * 1998-12-21 2003-02-04 Microchip Technology Incorporated High gain input stage for a radio frequency identification (RFID) transponder and method therefor
US6509825B1 (en) * 1999-09-24 2003-01-21 Microchip Technology Incorporated Integrated circuit device having a self-biased, single pin radio frequency signal input
DE10306052A1 (de) * 2003-02-13 2004-09-23 Infineon Technologies Ag Hochfrequenzverstärker mit Arbeitspunkteinstellungsschaltung
US7852136B2 (en) * 2008-08-12 2010-12-14 Raytheon Company Bias network
JP5646360B2 (ja) * 2011-02-04 2014-12-24 株式会社東芝 半導体装置
JP6440642B2 (ja) * 2016-01-25 2018-12-19 三菱電機株式会社 低雑音増幅回路及び低雑音増幅器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2186452B (en) * 1986-02-07 1989-12-06 Plessey Co Plc A bias current circuit,and cascade and ring circuits incorporating same
FR2641626B1 (fr) * 1989-01-11 1991-06-14 Sgs Thomson Microelectronics Generateur de tension de reference stable
US5126653A (en) * 1990-09-28 1992-06-30 Analog Devices, Incorporated Cmos voltage reference with stacked base-to-emitter voltages
EP0499673B1 (de) * 1991-02-21 1996-05-08 Siemens Aktiengesellschaft Regelschaltung für einen Substratvorspannungsgenerator
US5552740A (en) * 1994-02-08 1996-09-03 Micron Technology, Inc. N-channel voltage regulator

Also Published As

Publication number Publication date
DE19738177A1 (de) 1998-09-24
JPH10261922A (ja) 1998-09-29
CN1193845A (zh) 1998-09-23
US5889426A (en) 1999-03-30
JP3657079B2 (ja) 2005-06-08
KR100262467B1 (ko) 2000-08-01
KR19980079606A (ko) 1998-11-25

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