TW353186B - Electrical connections to dielectric materials - Google Patents

Electrical connections to dielectric materials

Info

Publication number
TW353186B
TW353186B TW084103884A TW84103884A TW353186B TW 353186 B TW353186 B TW 353186B TW 084103884 A TW084103884 A TW 084103884A TW 84103884 A TW84103884 A TW 84103884A TW 353186 B TW353186 B TW 353186B
Authority
TW
Taiwan
Prior art keywords
electrical connections
dielectric materials
electrical connection
dielectric material
electrically conductive
Prior art date
Application number
TW084103884A
Other languages
English (en)
Inventor
Monte A Douglas
Scott R Summerfelt
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW353186B publication Critical patent/TW353186B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Conductive Materials (AREA)
  • Inorganic Insulating Materials (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Compositions Of Oxide Ceramics (AREA)
TW084103884A 1992-04-20 1995-04-20 Electrical connections to dielectric materials TW353186B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87186492A 1992-04-20 1992-04-20

Publications (1)

Publication Number Publication Date
TW353186B true TW353186B (en) 1999-02-21

Family

ID=25358331

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084103884A TW353186B (en) 1992-04-20 1995-04-20 Electrical connections to dielectric materials

Country Status (5)

Country Link
US (1) US5520992A (zh)
EP (2) EP0567062A1 (zh)
JP (1) JP3351856B2 (zh)
KR (1) KR100325967B1 (zh)
TW (1) TW353186B (zh)

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US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
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JP3373525B2 (ja) * 1995-06-28 2003-02-04 テルコーディア テクノロジーズ インコーポレイテッド シリコン上に集積された多層強誘電体セルおよびペロブスカイト電子へテロ構造
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US6579600B1 (en) * 1996-07-25 2003-06-17 Materials Systems, Inc. Multilayer capacitor and method
US5923056A (en) * 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US6064102A (en) * 1997-12-17 2000-05-16 Advanced Micro Devices, Inc. Semiconductor device having gate electrodes with different gate insulators and fabrication thereof
US6271131B1 (en) 1998-08-26 2001-08-07 Micron Technology, Inc. Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
US6517616B2 (en) * 1998-08-27 2003-02-11 Micron Technology, Inc. Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide
US6074945A (en) * 1998-08-27 2000-06-13 Micron Technology, Inc. Methods for preparing ruthenium metal films
US5962716A (en) * 1998-08-27 1999-10-05 Micron Technology, Inc. Methods for preparing ruthenium and osmium compounds
US6133159A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods for preparing ruthenium oxide films
US6541067B1 (en) * 1998-08-27 2003-04-01 Micron Technology, Inc. Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same
US6197628B1 (en) 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6284655B1 (en) 1998-09-03 2001-09-04 Micron Technology, Inc. Method for producing low carbon/oxygen conductive layers
US6239028B1 (en) * 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6329286B1 (en) 1999-04-27 2001-12-11 Micron Technology, Inc. Methods for forming conformal iridium layers on substrates
US6465828B2 (en) 1999-07-30 2002-10-15 Micron Technology, Inc. Semiconductor container structure with diffusion barrier
US6417537B1 (en) 2000-01-18 2002-07-09 Micron Technology, Inc. Metal oxynitride capacitor barrier layer
US6380080B2 (en) 2000-03-08 2002-04-30 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6429127B1 (en) 2000-06-08 2002-08-06 Micron Technology, Inc. Methods for forming rough ruthenium-containing layers and structures/methods using same
US6660631B1 (en) * 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
US6642567B1 (en) 2000-08-31 2003-11-04 Micron Technology, Inc. Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
JP3624822B2 (ja) 2000-11-22 2005-03-02 株式会社日立製作所 半導体装置およびその製造方法
KR100387264B1 (ko) 2000-12-29 2003-06-12 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
WO2003021615A1 (en) * 2001-08-28 2003-03-13 Tdk Corporation Thin film capacity element-use composition, high-permittivity insulation film, thin film capacity element and thin film multilayer capacitor
JP3995619B2 (ja) * 2003-03-12 2007-10-24 富士通株式会社 薄膜キャパシタ素子、その製造方法及び電子装置
KR101001741B1 (ko) * 2003-08-18 2010-12-15 삼성전자주식회사 반도체 장치의 커패시터 및 그 제조 방법과 커패시터를구비하는 메모리 장치
US9101436B2 (en) * 2005-10-21 2015-08-11 Ada Foundation Dental and endodontic filling materials and methods
US9259439B2 (en) * 2005-10-21 2016-02-16 Ada Foundation Dual-phase cement precursor systems for bone repair
JP5608315B2 (ja) * 2007-12-03 2014-10-15 ピーエスフォー ルクスコ エスエイアールエル キャパシタ用電極及びその製造方法、キャパシタ
US8344438B2 (en) * 2008-01-31 2013-01-01 Qimonda Ag Electrode of an integrated circuit
KR100997379B1 (ko) 2008-08-08 2010-11-30 한국과학기술연구원 선형적 유전특성을 나타내는 유전체 박막 조성물
US8846468B2 (en) * 2012-12-17 2014-09-30 Intermolecular, Inc. Methods to improve leakage of high K materials
US9466660B2 (en) 2013-10-16 2016-10-11 Micron Technology, Inc. Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures
US9715966B2 (en) * 2014-04-23 2017-07-25 Richard Down Newberry Supercapacitor with extreme energy storage capacity

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Also Published As

Publication number Publication date
JP3351856B2 (ja) 2002-12-03
KR930022549A (ko) 1993-11-24
JPH06151712A (ja) 1994-05-31
EP0800187A3 (en) 2005-09-14
KR100325967B1 (ko) 2002-06-20
EP0567062A1 (en) 1993-10-27
US5520992A (en) 1996-05-28
EP0800187A2 (en) 1997-10-08

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees