TW326576B - Capacitor acceleration detector - Google Patents
Capacitor acceleration detectorInfo
- Publication number
- TW326576B TW326576B TW085114616A TW85114616A TW326576B TW 326576 B TW326576 B TW 326576B TW 085114616 A TW085114616 A TW 085114616A TW 85114616 A TW85114616 A TW 85114616A TW 326576 B TW326576 B TW 326576B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- detection part
- acceleration
- joining
- acceleration detector
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8241680A JPH1090299A (ja) | 1996-09-12 | 1996-09-12 | 静電容量式加速度センサ |
Publications (1)
Publication Number | Publication Date |
---|---|
TW326576B true TW326576B (en) | 1998-02-11 |
Family
ID=17077929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085114616A TW326576B (en) | 1996-09-12 | 1996-11-26 | Capacitor acceleration detector |
Country Status (5)
Country | Link |
---|---|
US (1) | US5864063A (zh) |
JP (1) | JPH1090299A (zh) |
KR (1) | KR100234919B1 (zh) |
DE (1) | DE19709731C2 (zh) |
TW (1) | TW326576B (zh) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0852337A1 (en) | 1996-12-24 | 1998-07-08 | STMicroelectronics S.r.l. | A hermetically sealed semiconductor inertial sensor |
EP0886144B1 (en) * | 1997-06-19 | 2006-09-06 | STMicroelectronics S.r.l. | A hermetically sealed sensor with a movable microstructure |
US6073271A (en) * | 1999-02-09 | 2000-06-13 | Adams Usa, Inc. | Football helmet with inflatable liner |
JP4151164B2 (ja) * | 1999-03-19 | 2008-09-17 | 株式会社デンソー | 半導体装置の製造方法 |
JP3498209B2 (ja) * | 1999-10-25 | 2004-02-16 | 株式会社村田製作所 | 外力検知センサ装置 |
US6315383B1 (en) * | 1999-12-22 | 2001-11-13 | Hewlett-Packard Company | Method and apparatus for ink-jet drop trajectory and alignment error detection and correction |
JP4603135B2 (ja) * | 2000-08-07 | 2010-12-22 | 住友精密工業株式会社 | 振動型ジャイロセンサ |
DE10111149B4 (de) * | 2001-03-08 | 2011-01-05 | Eads Deutschland Gmbh | Mikromechanischer kapazitiver Beschleunigungssensor |
EP1243930A1 (de) * | 2001-03-08 | 2002-09-25 | EADS Deutschland Gmbh | Mikromechanischer kapazitiver Beschleunigungssensor |
DE10117630B4 (de) * | 2001-04-09 | 2005-12-29 | Eads Deutschland Gmbh | Mikromechanischer kapazitiver Beschleunigungssensor |
JP3614789B2 (ja) * | 2001-03-28 | 2005-01-26 | 株式会社ホンダロック | 車両のアウトハンドル装置 |
US7036374B2 (en) * | 2002-01-25 | 2006-05-02 | William Thomas Pike | Micro-machined suspension plate with integral proof mass for use in a seismometer or other device |
US6776042B2 (en) | 2002-01-25 | 2004-08-17 | Kinemetrics, Inc. | Micro-machined accelerometer |
JP2003240797A (ja) * | 2002-02-18 | 2003-08-27 | Mitsubishi Electric Corp | 半導体加速度センサ |
DE10225714A1 (de) * | 2002-06-11 | 2004-01-08 | Eads Deutschland Gmbh | Mehrachsiger monolithischer Beschleunigungssensor |
JP2005038911A (ja) * | 2003-07-16 | 2005-02-10 | Mitsubishi Electric Corp | 半導体装置 |
JP2005172483A (ja) * | 2003-12-09 | 2005-06-30 | Toyo Commun Equip Co Ltd | 圧力センサ |
JP2005227089A (ja) * | 2004-02-12 | 2005-08-25 | Denso Corp | 力学量センサ装置 |
ES2255386B1 (es) * | 2004-05-13 | 2007-10-01 | Loxin 2002, S.L. | Sistema mejorado de remachado automatico. |
JP2006226743A (ja) | 2005-02-16 | 2006-08-31 | Mitsubishi Electric Corp | 加速度センサ |
JP4670427B2 (ja) * | 2005-03-28 | 2011-04-13 | パナソニック電工株式会社 | 半導体センサおよびその製造方法 |
JP2007178420A (ja) * | 2005-11-30 | 2007-07-12 | Denso Corp | 容量式物理量センサおよびその診断方法 |
US8342022B2 (en) * | 2006-03-10 | 2013-01-01 | Conti Temic Microelectronic Gmbh | Micromechanical rotational speed sensor |
JP2008002837A (ja) * | 2006-06-20 | 2008-01-10 | Denso Corp | 半導体容量式センサの製造方法 |
JP5061524B2 (ja) * | 2006-08-01 | 2012-10-31 | 三菱電機株式会社 | 加速度センサ |
JP5143857B2 (ja) * | 2010-04-20 | 2013-02-13 | 三菱電機株式会社 | 加速度センサの製造方法 |
JP5810500B2 (ja) * | 2010-09-30 | 2015-11-11 | セイコーエプソン株式会社 | センサーデバイス、モーションセンサー、電子機器 |
US10371714B2 (en) * | 2012-06-14 | 2019-08-06 | Analog Devices, Inc. | Teeter-totter type MEMS accelerometer with electrodes on circuit wafer |
ITTO20120542A1 (it) | 2012-06-20 | 2013-12-21 | St Microelectronics Srl | Dispositivo microelettromeccanico con instradamento dei segnali attraverso un cappuccio protettivo e metodo per controllare un dispositivo microelettromeccanico |
US9556017B2 (en) | 2013-06-25 | 2017-01-31 | Analog Devices, Inc. | Apparatus and method for preventing stiction of MEMS devices encapsulated by active circuitry |
US10081535B2 (en) | 2013-06-25 | 2018-09-25 | Analog Devices, Inc. | Apparatus and method for shielding and biasing in MEMS devices encapsulated by active circuitry |
US9604841B2 (en) | 2014-11-06 | 2017-03-28 | Analog Devices, Inc. | MEMS sensor cap with multiple isolated electrodes |
US10078098B2 (en) | 2015-06-23 | 2018-09-18 | Analog Devices, Inc. | Z axis accelerometer design with offset compensation |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0670644B2 (ja) * | 1989-09-07 | 1994-09-07 | 株式会社日立製作所 | 半導体容量式加速度センサとその製造方法 |
US5239871A (en) * | 1990-12-17 | 1993-08-31 | Texas Instruments Incorporated | Capacitive accelerometer |
JPH04294280A (ja) * | 1991-03-22 | 1992-10-19 | Aisin Seiki Co Ltd | 加速度検出装置 |
JP2760188B2 (ja) * | 1991-11-08 | 1998-05-28 | 日本電気株式会社 | 半導体集積回路 |
US5345823A (en) * | 1991-11-12 | 1994-09-13 | Texas Instruments Incorporated | Accelerometer |
JPH0694744A (ja) * | 1992-09-09 | 1994-04-08 | Mitsubishi Electric Corp | 半導体加速度検出装置 |
JPH06186249A (ja) * | 1992-12-16 | 1994-07-08 | Mitsubishi Electric Corp | 容量式加速度検出装置 |
JP2804874B2 (ja) * | 1992-12-25 | 1998-09-30 | 三菱電機株式会社 | 半導体加速度検出装置 |
JPH06213918A (ja) * | 1993-01-14 | 1994-08-05 | Mitsubishi Electric Corp | 半導体加速度検出装置 |
FR2710741B1 (fr) * | 1993-09-30 | 1995-10-27 | Commissariat Energie Atomique | Capteur électronique destiné à la caractérisation de grandeurs physiques et procédé de réalisation d'un tel capteur. |
JPH07191055A (ja) * | 1993-12-27 | 1995-07-28 | Hitachi Ltd | 静電容量式加速度センサ |
JPH07209328A (ja) * | 1994-01-20 | 1995-08-11 | Murata Mfg Co Ltd | 加速度検出装置 |
DE19509868A1 (de) * | 1995-03-17 | 1996-09-19 | Siemens Ag | Mikromechanisches Halbleiterbauelement |
JPH08297139A (ja) * | 1995-04-26 | 1996-11-12 | Mitsubishi Electric Corp | 半導体加速度センサ |
JPH08304447A (ja) * | 1995-05-02 | 1996-11-22 | Mitsubishi Electric Corp | 半導体加速度センサおよびその製造方法 |
JPH08316354A (ja) * | 1995-05-12 | 1996-11-29 | Mitsubishi Electric Corp | 半導体式センサ |
-
1996
- 1996-09-12 JP JP8241680A patent/JPH1090299A/ja active Pending
- 1996-11-26 TW TW085114616A patent/TW326576B/zh active
-
1997
- 1997-01-21 KR KR1019970001651A patent/KR100234919B1/ko not_active IP Right Cessation
- 1997-02-26 US US08/806,612 patent/US5864063A/en not_active Expired - Fee Related
- 1997-03-10 DE DE19709731A patent/DE19709731C2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH1090299A (ja) | 1998-04-10 |
DE19709731C2 (de) | 2002-03-14 |
DE19709731A1 (de) | 1998-03-26 |
KR100234919B1 (ko) | 1999-12-15 |
KR19980023925A (ko) | 1998-07-06 |
US5864063A (en) | 1999-01-26 |
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