TW266294B - - Google Patents
Info
- Publication number
- TW266294B TW266294B TW083105770A TW83105770A TW266294B TW 266294 B TW266294 B TW 266294B TW 083105770 A TW083105770 A TW 083105770A TW 83105770 A TW83105770 A TW 83105770A TW 266294 B TW266294 B TW 266294B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Measuring Magnetic Variables (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/014,981 US5422571A (en) | 1993-02-08 | 1993-02-08 | Magnetoresistive spin valve sensor having a nonmagnetic back layer |
Publications (1)
Publication Number | Publication Date |
---|---|
TW266294B true TW266294B (zh) | 1995-12-21 |
Family
ID=21768900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083105770A TW266294B (zh) | 1993-02-08 | 1994-06-24 |
Country Status (9)
Country | Link |
---|---|
US (1) | US5422571A (zh) |
EP (1) | EP0611033B1 (zh) |
JP (1) | JP2744883B2 (zh) |
KR (1) | KR0136825B1 (zh) |
CN (1) | CN1057627C (zh) |
DE (1) | DE69430964T2 (zh) |
MY (1) | MY110478A (zh) |
SG (1) | SG42851A1 (zh) |
TW (1) | TW266294B (zh) |
Families Citing this family (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5549978A (en) * | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5931032A (en) | 1998-04-16 | 1999-08-03 | Gregory; Edwin H. | Cutter and blow resistant lock |
US5780176A (en) * | 1992-10-30 | 1998-07-14 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
KR0148842B1 (ko) * | 1993-07-22 | 1998-10-15 | 가나이 쯔또무 | 자기기록매체 및 그의 제조방법과 자기기록 시스템 |
US5633771A (en) * | 1993-09-29 | 1997-05-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect type head and separate recording-reproducing type magnetic head |
DE4425356C2 (de) * | 1993-09-29 | 1998-07-02 | Siemens Ag | Magnetoresistiver Sensor unter Verwendung eines Sensormaterials mit perowskitähnlicher Kristallstruktur |
KR100368848B1 (ko) * | 1994-04-15 | 2003-04-03 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 자계센서,이센서를구비하는장치및이센서를제조하는방법 |
US5841611A (en) * | 1994-05-02 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same |
US6256222B1 (en) | 1994-05-02 | 2001-07-03 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same |
US5546253A (en) * | 1994-05-06 | 1996-08-13 | Quantum Corporation | Digitial output magnetoresistive (DOMR) head and methods associated therewith |
FR2722918B1 (fr) * | 1994-07-21 | 1996-08-30 | Commissariat Energie Atomique | Capteur a magnetoresistance multicouche autopolarisee |
JP3127777B2 (ja) * | 1994-08-02 | 2001-01-29 | 株式会社日立製作所 | 磁気トランスデューサおよび磁気記録装置 |
US5991125A (en) * | 1994-09-16 | 1999-11-23 | Kabushiki Kaisha Toshiba | Magnetic head |
JP3367230B2 (ja) * | 1994-10-25 | 2003-01-14 | ソニー・プレシジョン・テクノロジー株式会社 | 位置検出装置 |
US5515221A (en) * | 1994-12-30 | 1996-05-07 | International Business Machines Corporation | Magnetically stable shields for MR head |
FR2729790A1 (fr) * | 1995-01-24 | 1996-07-26 | Commissariat Energie Atomique | Magnetoresistance geante, procede de fabrication et application a un capteur magnetique |
US5629922A (en) * | 1995-02-22 | 1997-05-13 | Massachusetts Institute Of Technology | Electron tunneling device using ferromagnetic thin films |
JPH08279117A (ja) | 1995-04-03 | 1996-10-22 | Alps Electric Co Ltd | 巨大磁気抵抗効果材料膜およびその製造方法とそれを用いた磁気ヘッド |
JP2778626B2 (ja) * | 1995-06-02 | 1998-07-23 | 日本電気株式会社 | 磁気抵抗効果膜及びその製造方法並びに磁気抵抗効果素子 |
DE69619166T2 (de) * | 1995-06-15 | 2002-06-20 | Tdk Corp., Tokio/Tokyo | Magnetoresistiver Wandler mit "Spin-Valve" Struktur und Herstellungsverfahren |
SG46731A1 (en) * | 1995-06-30 | 1998-02-20 | Ibm | Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer and magnetic recording system using the senor |
JPH0936455A (ja) * | 1995-07-21 | 1997-02-07 | Sony Corp | 磁気抵抗効果素子 |
US5896252A (en) * | 1995-08-11 | 1999-04-20 | Fujitsu Limited | Multilayer spin valve magneto-resistive effect magnetic head with free magnetic layer including two sublayers and magnetic disk drive including same |
JP3207094B2 (ja) * | 1995-08-21 | 2001-09-10 | 松下電器産業株式会社 | 磁気抵抗効果素子及びメモリー素子 |
WO1997011499A1 (fr) * | 1995-09-21 | 1997-03-27 | Tdk Corporation | Transducteur magnetique |
US5695864A (en) * | 1995-09-28 | 1997-12-09 | International Business Machines Corporation | Electronic device using magnetic components |
US5835314A (en) * | 1996-04-17 | 1998-11-10 | Massachusetts Institute Of Technology | Tunnel junction device for storage and switching of signals |
US5764056A (en) * | 1996-05-16 | 1998-06-09 | Seagate Technology, Inc. | Nickel-manganese as a pinning layer in spin valve/GMR magnetic sensors |
US6088181A (en) * | 1996-05-30 | 2000-07-11 | Kabushiki Kaisha Toshiba | Magnetic recording/reproducing device using composite head |
US5747997A (en) * | 1996-06-05 | 1998-05-05 | Regents Of The University Of Minnesota | Spin-valve magnetoresistance sensor having minimal hysteresis problems |
US6166539A (en) * | 1996-10-30 | 2000-12-26 | Regents Of The University Of Minnesota | Magnetoresistance sensor having minimal hysteresis problems |
JPH1049834A (ja) * | 1996-08-07 | 1998-02-20 | Sony Corp | 多層磁気抵抗効果膜、磁気抵抗効果素子及び磁気抵抗効果型磁気ヘッド |
US5945904A (en) * | 1996-09-06 | 1999-08-31 | Ford Motor Company | Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers |
JPH1097709A (ja) * | 1996-09-20 | 1998-04-14 | Fujitsu Ltd | スピンバルブ磁気抵抗効果ヘッドとその製造方法及び磁気記録再生装置 |
US5930062A (en) * | 1996-10-03 | 1999-07-27 | Hewlett-Packard Company | Actively stabilized magnetoresistive head |
JP3884110B2 (ja) * | 1996-10-09 | 2007-02-21 | 株式会社東芝 | 陰極線管 |
US5717550A (en) * | 1996-11-01 | 1998-02-10 | Read-Rite Corporation | Antiferromagnetic exchange biasing using buffer layer |
US6535362B2 (en) | 1996-11-28 | 2003-03-18 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive device having a highly smooth metal reflective layer |
US5998016A (en) * | 1997-01-16 | 1999-12-07 | Tdk Corporation | Spin valve effect magnetoresistive sensor and magnetic head with the sensor |
JP3368788B2 (ja) * | 1997-02-17 | 2003-01-20 | ティーディーケイ株式会社 | スピンバルブ磁気抵抗素子を備えた磁気ヘッドの検査方法及び検査装置 |
JPH10241124A (ja) * | 1997-02-28 | 1998-09-11 | Tdk Corp | スピンバルブ磁気抵抗素子の磁気特性制御方法及び該素子を備えた磁気ヘッドの磁気特性制御方法 |
JP3886589B2 (ja) * | 1997-03-07 | 2007-02-28 | アルプス電気株式会社 | 巨大磁気抵抗効果素子センサ |
JP3334552B2 (ja) * | 1997-03-21 | 2002-10-15 | ティーディーケイ株式会社 | スピンバルブ磁気抵抗素子を備えた磁気ヘッドの検査方法及び装置 |
JP2924845B2 (ja) * | 1997-03-24 | 1999-07-26 | ティーディーケイ株式会社 | スピンバルブ磁気抵抗素子を備えた磁気ヘッド及びその製造方法 |
JP2970590B2 (ja) * | 1997-05-14 | 1999-11-02 | 日本電気株式会社 | 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム |
US5856008A (en) * | 1997-06-05 | 1999-01-05 | Lucent Technologies Inc. | Article comprising magnetoresistive material |
US5768071A (en) * | 1997-06-19 | 1998-06-16 | International Business Machines Corporation | Spin valve sensor with improved magnetic stability of the pinned layer |
JP2985964B2 (ja) * | 1997-06-30 | 1999-12-06 | 日本電気株式会社 | 磁気抵抗効果型ヘッド及びその初期化方法 |
US5867351A (en) * | 1997-07-25 | 1999-02-02 | International Business Machines Corporation | Spin valve read head with low moment, high coercivity pinning layer |
US5956215A (en) * | 1997-08-12 | 1999-09-21 | Storage Technology Corporation | High density thin film coupled element read head with support element to prevent damage to magnetoresistive element |
US6222702B1 (en) | 1997-08-15 | 2001-04-24 | Seagate Technology, Inc. | Magnetic read element shield having dimensions that minimize domain wall movement |
US5880913A (en) * | 1997-10-27 | 1999-03-09 | International Business Machines Corporation | Antiparallel pinned spin valve sensor with read signal symmetry |
JPH11185224A (ja) * | 1997-12-24 | 1999-07-09 | Tdk Corp | 薄膜磁気ヘッドの製造方法 |
US5920446A (en) * | 1998-01-06 | 1999-07-06 | International Business Machines Corporation | Ultra high density GMR sensor |
JP3334599B2 (ja) | 1998-03-12 | 2002-10-15 | ティーディーケイ株式会社 | 磁気抵抗効果素子の磁化方向測定方法及び装置 |
US6134090A (en) * | 1998-03-20 | 2000-10-17 | Seagate Technology Llc | Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer |
JP3456409B2 (ja) | 1998-03-23 | 2003-10-14 | Tdk株式会社 | 薄膜磁気ヘッドの製造方法 |
JP3755291B2 (ja) | 1998-04-02 | 2006-03-15 | Tdk株式会社 | 薄膜磁気ヘッドの製造方法 |
JP3838469B2 (ja) | 1998-04-20 | 2006-10-25 | Tdk株式会社 | 磁気抵抗素子の磁気特性制御方法、該素子を備えた磁気ヘッドの磁気特性制御方法、該素子を備えた磁気ヘッド装置、及び磁気ディスク装置 |
US6356420B1 (en) | 1998-05-07 | 2002-03-12 | Seagate Technology Llc | Storage system having read head utilizing GMR and AMr effects |
JPH11354860A (ja) | 1998-06-10 | 1999-12-24 | Read Rite Smi Kk | スピンバルブ磁気変換素子及び磁気ヘッド |
JP3234814B2 (ja) * | 1998-06-30 | 2001-12-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ及び磁気記録装置 |
US7738220B1 (en) | 1998-06-30 | 2010-06-15 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system |
JP3521755B2 (ja) | 1998-08-11 | 2004-04-19 | Tdk株式会社 | 磁気抵抗効果素子の磁区制御バイアス磁界測定方法及び装置 |
JP2000099925A (ja) * | 1998-09-21 | 2000-04-07 | Sony Corp | スピンバルブ膜、磁気抵抗効果素子及び磁気抵抗効果型磁気ヘッド |
JP2000149228A (ja) | 1998-11-05 | 2000-05-30 | Tdk Corp | 薄膜磁気ヘッドの製造方法 |
JP2000215414A (ja) | 1999-01-25 | 2000-08-04 | Hitachi Ltd | 磁気センサ― |
JP3959881B2 (ja) | 1999-02-08 | 2007-08-15 | Tdk株式会社 | 磁気抵抗効果センサの製造方法 |
US6331773B1 (en) | 1999-04-16 | 2001-12-18 | Storage Technology Corporation | Pinned synthetic anti-ferromagnet with oxidation protection layer |
JP2000348310A (ja) | 1999-06-03 | 2000-12-15 | Alps Electric Co Ltd | スピンバルブ型薄膜素子およびそのスピンバルブ型薄膜素子を備えた薄膜磁気ヘッド |
EP1193692B1 (en) * | 1999-07-05 | 2009-02-18 | Fujitsu Limited | Spin-valve magnetoresistance effect head, composite magnetic head comprising the same, and magnetoresistance recorded medium drive |
US7196880B1 (en) | 1999-07-19 | 2007-03-27 | Western Digital (Fremont), Inc. | Spin valve sensor having a nonmagnetic enhancement layer adjacent an ultra thin free layer |
JP2001110016A (ja) | 1999-10-05 | 2001-04-20 | Alps Electric Co Ltd | スピンバルブ型薄膜磁気素子およびその製造方法、およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド |
US6455177B1 (en) * | 1999-10-05 | 2002-09-24 | Seagate Technology Llc | Stabilization of GMR devices |
JP2001126219A (ja) * | 1999-10-28 | 2001-05-11 | Read Rite Corp | スピンバルブ型磁気抵抗センサ及び薄膜磁気ヘッド |
JP3623417B2 (ja) * | 1999-12-03 | 2005-02-23 | アルプス電気株式会社 | スピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド |
US6519117B1 (en) | 1999-12-06 | 2003-02-11 | International Business Machines Corporation | Dual AP pinned GMR head with offset layer |
US6430013B1 (en) | 1999-12-06 | 2002-08-06 | International Business Machines Corporation | Magnetoresistive structure having improved thermal stability via magnetic barrier layer within a free layer |
JP3817399B2 (ja) * | 1999-12-24 | 2006-09-06 | 株式会社日立グローバルストレージテクノロジーズ | 磁気抵抗センサー |
JP3657487B2 (ja) * | 2000-02-02 | 2005-06-08 | アルプス電気株式会社 | スピンバルブ型薄膜磁気素子およびその製造方法、およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド |
JP2001222803A (ja) | 2000-02-03 | 2001-08-17 | Tdk Corp | 磁気変換素子および薄膜磁気ヘッド |
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1993
- 1993-02-08 US US08/014,981 patent/US5422571A/en not_active Expired - Lifetime
-
1994
- 1994-01-11 EP EP94300189A patent/EP0611033B1/en not_active Expired - Lifetime
- 1994-01-11 SG SG1996000141A patent/SG42851A1/en unknown
- 1994-01-11 DE DE69430964T patent/DE69430964T2/de not_active Expired - Fee Related
- 1994-01-14 JP JP6002326A patent/JP2744883B2/ja not_active Expired - Fee Related
- 1994-02-04 MY MYPI94000272A patent/MY110478A/en unknown
- 1994-02-07 CN CN94102119A patent/CN1057627C/zh not_active Expired - Fee Related
- 1994-02-08 KR KR1019940002418A patent/KR0136825B1/ko not_active IP Right Cessation
- 1994-06-24 TW TW083105770A patent/TW266294B/zh active
Also Published As
Publication number | Publication date |
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SG42851A1 (en) | 1997-10-17 |
DE69430964T2 (de) | 2003-02-13 |
EP0611033A2 (en) | 1994-08-17 |
JPH06236527A (ja) | 1994-08-23 |
EP0611033A3 (en) | 1995-12-27 |
CN1057627C (zh) | 2000-10-18 |
DE69430964D1 (de) | 2002-08-22 |
JP2744883B2 (ja) | 1998-04-28 |
EP0611033B1 (en) | 2002-07-17 |
CN1099178A (zh) | 1995-02-22 |
KR0136825B1 (ko) | 1998-05-15 |
US5422571A (en) | 1995-06-06 |
KR940020312A (ko) | 1994-09-15 |
MY110478A (en) | 1998-05-30 |