TW248603B - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- TW248603B TW248603B TW083109814A TW83109814A TW248603B TW 248603 B TW248603 B TW 248603B TW 083109814 A TW083109814 A TW 083109814A TW 83109814 A TW83109814 A TW 83109814A TW 248603 B TW248603 B TW 248603B
- Authority
- TW
- Taiwan
- Prior art keywords
- capacitor
- bit line
- memory device
- semiconductor memory
- readouts
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000003990 capacitor Substances 0.000 abstract 3
- 230000004075 alteration Effects 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01826894A JP3191549B2 (ja) | 1994-02-15 | 1994-02-15 | 半導体メモリ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW248603B true TW248603B (en) | 1995-06-01 |
Family
ID=11966916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083109814A TW248603B (en) | 1994-02-15 | 1994-10-22 | Semiconductor memory device |
Country Status (7)
Country | Link |
---|---|
US (1) | US5515312A (zh) |
EP (1) | EP0667620B1 (zh) |
JP (1) | JP3191549B2 (zh) |
KR (1) | KR100199786B1 (zh) |
CN (1) | CN1096680C (zh) |
DE (1) | DE69422901T2 (zh) |
TW (1) | TW248603B (zh) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2953316B2 (ja) * | 1994-08-12 | 1999-09-27 | 日本電気株式会社 | 不揮発性強誘電体メモリ |
US5798964A (en) * | 1994-08-29 | 1998-08-25 | Toshiba Corporation | FRAM, FRAM card, and card system using the same |
JP3186485B2 (ja) * | 1995-01-04 | 2001-07-11 | 日本電気株式会社 | 強誘電体メモリ装置およびその動作制御方法 |
JP2748873B2 (ja) * | 1995-01-04 | 1998-05-13 | 日本電気株式会社 | 強誘電体メモリ装置およびその動作制御方法 |
JPH08194679A (ja) * | 1995-01-19 | 1996-07-30 | Texas Instr Japan Ltd | ディジタル信号処理方法及び装置並びにメモリセル読出し方法 |
US5764561A (en) * | 1995-11-16 | 1998-06-09 | Rohm Co., Ltd. | Ferroelectric memory devices and method of using ferroelectric capacitors |
US6330178B1 (en) | 1996-02-28 | 2001-12-11 | Hitachi, Ltd. | Ferroelectric memory device |
WO1997032311A1 (fr) * | 1996-02-28 | 1997-09-04 | Hitachi, Ltd. | Memoire ferroelectrique |
JPH09288891A (ja) * | 1996-04-19 | 1997-11-04 | Matsushita Electron Corp | 半導体メモリ装置 |
KR100295568B1 (ko) * | 1997-02-03 | 2001-09-07 | 니시무로 타이죠 | 반도체 장치 및 그의 제조방법 |
US5911081A (en) * | 1997-05-05 | 1999-06-08 | Sun Microsystems, Inc. | Method and apparatus for selectively inhibiting power shutdowns based upon the number of power shutdowns that an electrical device has been experienced |
US6294439B1 (en) | 1997-07-23 | 2001-09-25 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
US6028783A (en) | 1997-11-14 | 2000-02-22 | Ramtron International Corporation | Memory cell configuration for a 1T/1C ferroelectric memory |
US5969980A (en) * | 1997-11-14 | 1999-10-19 | Ramtron International Corporation | Sense amplifier configuration for a 1T/1C ferroelectric memory |
US5880989A (en) * | 1997-11-14 | 1999-03-09 | Ramtron International Corporation | Sensing methodology for a 1T/1C ferroelectric memory |
US5892728A (en) * | 1997-11-14 | 1999-04-06 | Ramtron International Corporation | Column decoder configuration for a 1T/1C ferroelectric memory |
US5978251A (en) * | 1997-11-14 | 1999-11-02 | Ramtron International Corporation | Plate line driver circuit for a 1T/1C ferroelectric memory |
US20050122765A1 (en) * | 1997-11-14 | 2005-06-09 | Allen Judith E. | Reference cell configuration for a 1T/1C ferroelectric memory |
US5986919A (en) * | 1997-11-14 | 1999-11-16 | Ramtron International Corporation | Reference cell configuration for a 1T/1C ferroelectric memory |
US5995406A (en) * | 1997-11-14 | 1999-11-30 | Ramtron International Corporation | Plate line segmentation in a 1T/1C ferroelectric memory |
US6002634A (en) * | 1997-11-14 | 1999-12-14 | Ramtron International Corporation | Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory |
US5956266A (en) * | 1997-11-14 | 1999-09-21 | Ramtron International Corporation | Reference cell for a 1T/1C ferroelectric memory |
KR100282045B1 (ko) * | 1998-08-07 | 2001-03-02 | 윤종용 | 강유전체 커패시터를 구비한 불 휘발성 다이나믹 랜덤 엑세스메모리 |
JP3780713B2 (ja) * | 1998-08-25 | 2006-05-31 | 富士通株式会社 | 強誘電体メモリ、強誘電体メモリの製造方法及び強誘電体メモリの試験方法 |
US6545902B2 (en) | 1998-08-28 | 2003-04-08 | Hitachi, Ltd. | Ferroelectric memory device |
KR100308188B1 (ko) * | 1999-04-27 | 2001-10-29 | 윤종용 | 안정된 감지 마진을 가지는 강유전체 랜덤 액세스 메모리 |
JP2001035817A (ja) | 1999-07-22 | 2001-02-09 | Toshiba Corp | ウェーハの分割方法及び半導体装置の製造方法 |
KR100816689B1 (ko) * | 2001-12-29 | 2008-03-27 | 주식회사 하이닉스반도체 | 강유전체 메모리 셀어레이 |
US7972632B2 (en) | 2003-02-28 | 2011-07-05 | Unigen Pharmaceuticals, Inc. | Identification of Free-B-Ring flavonoids as potent COX-2 inhibitors |
CN1798568B (zh) | 2003-04-04 | 2011-05-11 | 尤尼根制药公司 | 用于哺乳动物皮肤护理的双重环氧合酶(cox)以及脂氧合酶(lox)抑制剂的组合物 |
WO2005091301A1 (ja) * | 2004-03-24 | 2005-09-29 | Fujitsu Limited | 強誘電体メモリ |
JP2010102793A (ja) * | 2008-10-24 | 2010-05-06 | Toshiba Corp | 半導体記憶装置 |
CN104471648B (zh) * | 2012-02-16 | 2017-07-21 | 芝诺半导体有限公司 | 包括初级和二级电晶体的存储单元 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59162695A (ja) * | 1983-03-07 | 1984-09-13 | Nec Corp | 記憶装置 |
US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
JPH04141897A (ja) * | 1990-10-01 | 1992-05-15 | Hitachi Ltd | Eeprom装置 |
US5345414A (en) * | 1992-01-27 | 1994-09-06 | Rohm Co., Ltd. | Semiconductor memory device having ferroelectric film |
US5381379A (en) * | 1992-12-03 | 1995-01-10 | Sharp Kabushiki Kaisha | Non-volatile dynamic random access memory device; a page store device and a page recall device used in the same; and a page store method and a page recall method |
-
1994
- 1994-02-15 JP JP01826894A patent/JP3191549B2/ja not_active Expired - Fee Related
- 1994-10-13 US US08/322,541 patent/US5515312A/en not_active Expired - Fee Related
- 1994-10-22 TW TW083109814A patent/TW248603B/zh active
- 1994-10-28 CN CN94113672A patent/CN1096680C/zh not_active Expired - Fee Related
- 1994-11-07 EP EP94117507A patent/EP0667620B1/en not_active Expired - Lifetime
- 1994-11-07 DE DE69422901T patent/DE69422901T2/de not_active Expired - Fee Related
-
1995
- 1995-02-14 KR KR1019950002637A patent/KR100199786B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1096680C (zh) | 2002-12-18 |
JP3191549B2 (ja) | 2001-07-23 |
DE69422901T2 (de) | 2000-07-27 |
DE69422901D1 (de) | 2000-03-09 |
EP0667620A3 (en) | 1996-02-07 |
KR950025778A (ko) | 1995-09-18 |
CN1115099A (zh) | 1996-01-17 |
EP0667620B1 (en) | 2000-02-02 |
US5515312A (en) | 1996-05-07 |
KR100199786B1 (ko) | 1999-06-15 |
JPH07226087A (ja) | 1995-08-22 |
EP0667620A2 (en) | 1995-08-16 |
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