TW202144121A - 雙面研磨裝置用載具的製造方法及晶圓的雙面研磨方法 - Google Patents
雙面研磨裝置用載具的製造方法及晶圓的雙面研磨方法 Download PDFInfo
- Publication number
- TW202144121A TW202144121A TW110110290A TW110110290A TW202144121A TW 202144121 A TW202144121 A TW 202144121A TW 110110290 A TW110110290 A TW 110110290A TW 110110290 A TW110110290 A TW 110110290A TW 202144121 A TW202144121 A TW 202144121A
- Authority
- TW
- Taiwan
- Prior art keywords
- double
- carrier
- wafer
- stage
- load
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 126
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000011347 resin Substances 0.000 claims abstract description 94
- 229920005989 resin Polymers 0.000 claims abstract description 94
- 239000000463 material Substances 0.000 claims abstract description 63
- 238000002360 preparation method Methods 0.000 claims abstract description 3
- 238000000227 grinding Methods 0.000 claims description 72
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 239000004744 fabric Substances 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 230000014759 maintenance of location Effects 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 62
- 230000000052 comparative effect Effects 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020087470A JP7276246B2 (ja) | 2020-05-19 | 2020-05-19 | 両面研磨装置用キャリアの製造方法及びウェーハの両面研磨方法 |
JP2020-087470 | 2020-05-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202144121A true TW202144121A (zh) | 2021-12-01 |
Family
ID=78606760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110110290A TW202144121A (zh) | 2020-05-19 | 2021-03-23 | 雙面研磨裝置用載具的製造方法及晶圓的雙面研磨方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7276246B2 (ja) |
KR (1) | KR20230011291A (ja) |
CN (1) | CN115485813A (ja) |
TW (1) | TW202144121A (ja) |
WO (1) | WO2021235066A1 (ja) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5114113B2 (ja) * | 2007-07-02 | 2013-01-09 | スピードファム株式会社 | ワークキャリア |
JP2009222183A (ja) | 2008-03-18 | 2009-10-01 | Nok Corp | シール構造 |
JP5494224B2 (ja) * | 2010-05-20 | 2014-05-14 | 信越半導体株式会社 | 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法 |
JP5847789B2 (ja) * | 2013-02-13 | 2016-01-27 | 信越半導体株式会社 | 両面研磨装置用キャリアの製造方法およびウエーハの両面研磨方法 |
KR20160056089A (ko) | 2014-11-11 | 2016-05-19 | 엘지이노텍 주식회사 | 발광 장치 |
JP6447332B2 (ja) * | 2015-04-13 | 2019-01-09 | 信越半導体株式会社 | 両面研磨装置用のキャリアの製造方法およびウェーハの両面研磨方法 |
JP6443370B2 (ja) * | 2016-03-18 | 2018-12-26 | 信越半導体株式会社 | 両面研磨装置用のキャリアの製造方法およびウェーハの両面研磨方法 |
JP6863309B2 (ja) * | 2018-02-06 | 2021-04-21 | 信越半導体株式会社 | 両面研磨装置用のキャリアの製造方法及びウェーハの両面研磨方法 |
JP6977657B2 (ja) * | 2018-05-08 | 2021-12-08 | 信越半導体株式会社 | 両面研磨装置用キャリアの保管方法及びウェーハの両面研磨方法 |
-
2020
- 2020-05-19 JP JP2020087470A patent/JP7276246B2/ja active Active
-
2021
- 2021-03-16 CN CN202180031139.0A patent/CN115485813A/zh active Pending
- 2021-03-16 KR KR1020227039248A patent/KR20230011291A/ko unknown
- 2021-03-16 WO PCT/JP2021/010649 patent/WO2021235066A1/ja active Application Filing
- 2021-03-23 TW TW110110290A patent/TW202144121A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP7276246B2 (ja) | 2023-05-18 |
KR20230011291A (ko) | 2023-01-20 |
CN115485813A (zh) | 2022-12-16 |
JP2021182586A (ja) | 2021-11-25 |
WO2021235066A1 (ja) | 2021-11-25 |
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