TW202144121A - Method for manufacturing carrier for double-side polishing device, carrier for double-side polishing device, and method for wafer double-side polishing - Google Patents

Method for manufacturing carrier for double-side polishing device, carrier for double-side polishing device, and method for wafer double-side polishing Download PDF

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TW202144121A
TW202144121A TW110110290A TW110110290A TW202144121A TW 202144121 A TW202144121 A TW 202144121A TW 110110290 A TW110110290 A TW 110110290A TW 110110290 A TW110110290 A TW 110110290A TW 202144121 A TW202144121 A TW 202144121A
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double
carrier
wafer
stage
load
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TW110110290A
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吉田容輝
田中佑宜
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日商信越半導體股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

The present invention is a method for manufacturing a carrier for a double-side polishing device that has an upper surface plate and a lower surface plate with polishing cloths adhered thereto, said carrier having a carrier base material and a resin insert, said carrier base material having a retention hole formed therein for retaining a wafer, and said resin insert being positioned along an inner circumference surface of the retention hole and having an inner circumference section formed therein that contacts an outer circumference section of the wafer. This method for manufacturing a carrier for a double-side polishing device has: a preparation step in which the carrier base material and the resin insert, which is thicker than the carrier base material, are prepared; a forming step in which the resin insert is formed on the inner circumference surface of the retention hole in an unbonded manner and so as to have a peel strength of 10N to 50N; and a startup polishing step in which the double-side polishing device is used to perform startup polishing, with a multi-level load of two or more levels, of the carrier that comprises the carrier base material and the resin insert. Accordingly, the present invention provides a manufacturing method for a carrier for a double-side polishing device wherein obverse/reverse discrepancy in the level difference between the resin insert and the carrier base material in the carrier for a double-side polishing device can be reduced.

Description

雙面研磨裝置用載具的製造方法及晶圓的雙面研磨方法Manufacturing method of carrier for double-sided polishing apparatus, and double-sided polishing method of wafer

本發明關於雙面研磨裝置用載具的製造方法及將其加以使用前述雙面研磨裝置用載具之晶圓的雙面研磨方法。The present invention relates to a method for manufacturing a carrier for a double-side polishing apparatus and a method for double-side polishing of a wafer using the carrier for a double-side polishing apparatus.

雙面研磨裝置，為了同時研磨一批量5片左右之晶圓的雙面，而在下磨盤上設置具有與晶圓片數相同數量的固持孔之雙面研磨裝置用載具。利用載具的固持孔固持晶圓，並利用設在上下磨盤之研磨布而從雙面夾入晶圓，一邊將研磨劑供給至研磨面、一邊進行研磨。In the double-sided polishing device, in order to simultaneously polish both sides of a batch of about 5 wafers, a carrier for a double-sided polishing device with the same number of holding holes as the number of wafers is provided on the lower grinding disc. The wafer is held by the holding hole of the carrier, and the wafer is sandwiched from both sides by the polishing cloth provided on the upper and lower grinding discs, and the polishing is performed while supplying the polishing agent to the polishing surface.

具有用以固持晶圓之固持孔之雙面研磨裝置用載具（以下亦僅稱作載具），係以金屬製載具為主流。為了使晶圓的外周部免受金屬製載具所影響，而在載具的晶圓固持孔內周部具有樹脂嵌入物。樹脂嵌入物，因為係與晶圓的外周部銜接，所以對於完善晶圓的邊緣形狀而言係重要。就與樹脂嵌入物有關之參數之一而言，示有與金屬基板（載具母材）之高低差。將此高低差的一例說明於下。Carriers for double-sided polishing apparatuses (hereinafter also referred to as carriers) having holding holes for holding wafers are mainly made of metal carriers. In order to protect the outer peripheral portion of the wafer from the influence of the metal carrier, a resin insert is provided in the inner peripheral portion of the wafer holding hole of the carrier. The resin insert is important for perfecting the edge shape of the wafer because it is attached to the outer periphery of the wafer. As one of the parameters related to the resin insert, the level difference with the metal substrate (carrier base material) is shown. An example of this level difference will be described below.

圖6顯示往昔技術所成之載具的起始研磨後之樹脂嵌入物與載具母材之高低差基本資料的圖表。上層係將樹脂嵌入物與載具母材之高低差加以顯示之概略圖，在載具的表面與背面分別藉由接觸式測量而使探針掃描測量處於樹脂嵌入物與載具母材之間之高低差的高度。 此高低差量的測量結果係中層的圖表，橫軸顯示載具的半徑方向的距離、縱軸顯示高低差量。橫軸的0mm相當於載具母材（負向）與樹脂嵌入物（正向）的邊界。高低差量，在載具母材的部分幾乎係0μm。樹脂嵌入物的部分，表示從載具母材的表面或背面起算之高低差，若係正向則表示自載具母材突出，若係負向則表示自載具母材凹陷。 下層的圖表，顯示針對在樹脂嵌入物上逐次移動90°之總共四處，分別測量表面與背面的高低差量與表背差之結果。吾人得知高低差量的表背差在任一處皆變大。FIG. 6 is a graph showing the basic data of the height difference between the resin insert and the base material of the carrier after the initial grinding of the carrier formed by the conventional technology. The upper layer is a schematic diagram showing the height difference between the resin insert and the base material of the carrier. The probe scanning measurement is performed between the resin insert and the base material of the carrier by contact measurement on the surface and back of the carrier respectively. The height of the height difference. The measurement result of this height difference is a graph of the middle layer, the horizontal axis shows the distance in the radial direction of the vehicle, and the vertical axis shows the height difference. 0mm on the horizontal axis corresponds to the boundary between the carrier base material (negative direction) and the resin insert (positive direction). The height difference is almost 0 μm in the part of the base material of the carrier. The part of the resin insert indicates the height difference from the front or back of the carrier base material. If it is positive, it means protruding from the carrier base material, and if it is negative, it means that it is recessed from the carrier base material. The bottom chart shows the results of measuring the height difference between the front and the back and the front-back difference for a total of four places in which the resin insert was moved 90° successively. We know that the difference between the height and the back of the watch becomes larger everywhere.

吾人知悉此高低差對於晶圓的邊緣形狀的品質即ZDD（radial Double　Derivative of Z-height；Z高度雙重微分）造成影響。尤其，為了使晶圓表背的ZDD同等，吾人期望樹脂嵌入物與金屬基板之表背的高低差量係同等。於是，往昔技術之中，將比金屬基板更厚之樹脂嵌入物加以黏接，調整上下磨盤的旋轉數，藉以降低表背的高低差量之差（例如參照專利文獻1）。 此外，往昔技術之中，為了防止脫落，載具的樹脂嵌入物部分係藉由樹脂製液劑所成之黏接或使錨定器導入至金屬基板等而堅固固定（例如參照專利文獻2）。 [先前技術文獻] [專利文獻]We know that this height difference affects the quality of the edge shape of the wafer, namely ZDD (radial Double Derivative of Z-height; Z-height double differential). In particular, in order to make the ZDD of the front and back of the wafer the same, it is expected that the height difference between the front and back of the resin insert and the metal substrate should be the same. Therefore, in the prior art, a resin insert thicker than the metal substrate was bonded, and the rotation number of the upper and lower grinding discs was adjusted to reduce the difference in height difference between the front and back (for example, refer to Patent Document 1). In addition, in the conventional technology, in order to prevent falling off, the resin insert part of the carrier is firmly fixed by bonding with a resin liquid agent or introducing an anchor to a metal substrate (for example, refer to Patent Document 2). . [Prior Art Literature] [Patent Literature]

專利文獻1：日本特願2016-56089號公報 專利文獻2：日本特願2009-222183號公報Patent Document 1: Japanese Patent Application No. 2016-56089 Patent Document 2: Japanese Patent Application No. 2009-222183

[發明所欲解決之問題][Problems to be Solved by Invention]

上述方法，不僅受襯墊（研磨布）的網眼堵塞或料漿（研磨劑）的凝聚狀態等之構件的使用期限之影響，還受裝置精度或載具的翹曲等之影響，因此，樹脂嵌入物的表面側或背面側中之一者會以不同於設定條件之方式出乎意料地被優先削減，無法充份達成高低差量的表背差之降低，其結果，吾人發現晶圓加工時在晶圓的表背的ZDD出現差異之狀況。因此，吾人希望一種不易取決於上述影響、更簡單之具有樹脂嵌入物之載具的起始研磨方法。The above method is not only affected by the service life of members such as the clogging of the pads (abrasive cloth) or the aggregated state of the slurry (abrasive), but also by the accuracy of the device and the warpage of the carrier. Therefore, One of the front side or the back side of the resin insert is unexpectedly preferentially cut in a way different from the set conditions, and the reduction of the front-back difference of the height difference cannot be sufficiently achieved. As a result, we found that the wafer A condition in which the ZDD of the front and back of the wafer differs during processing. Therefore, we would like a simpler initial grinding method for carriers with resin inserts that is less susceptible to the above-mentioned effects.

本發明係為了解決如此課題而成，目的在於提供一種雙面研磨裝置用載具的製造方法，可以降低樹脂嵌入物與載具母材之高低差量的表背差。 [解決問題之方式]The present invention has been made in order to solve such a problem, and an object of the present invention is to provide a method of manufacturing a carrier for a double-sided polishing apparatus, which can reduce the front-to-back difference of the height difference between the resin insert and the carrier base material. [How to solve the problem]

為了解決上述課題，本發明提供一種雙面研磨裝置用載具的製造方法，前述雙面研磨裝置用載具，使用於具備貼附有研磨布之上磨盤及下磨盤之雙面研磨裝置，且具有：載具母材，形成有用以固持晶圓之固持孔；以及樹脂嵌入物，沿著前述固持孔的內周面配置，且形成有與前述晶圓的外周部銜接之內周部；且前述雙面研磨裝置用載具的製造方法，其特徵為包括：準備步驟，準備前述載具母材、及比該載具母材更厚之前述樹脂嵌入物；形成步驟，將前述樹脂嵌入物，以非黏接且剝離強度係10N以上50N以下之方式形成於前述固持孔的內周面；以及起始研磨步驟，使用前述雙面研磨裝置，將由前述載具母材及前述樹脂嵌入物所構成之載具，進行負載係二階段以上之多階段之起始研磨。In order to solve the above-mentioned problems, the present invention provides a method of manufacturing a carrier for a double-side polishing apparatus, which is used in a double-side polishing apparatus including an upper grinding disc and a lower grinding disc to which a polishing cloth is attached, and It has: a carrier base material formed with a holding hole for holding the wafer; and a resin insert, arranged along the inner peripheral surface of the holding hole, and formed with an inner peripheral portion connected to the outer peripheral portion of the wafer; and The method for manufacturing a carrier for a double-sided polishing device is characterized by comprising: a preparation step of preparing the carrier base material and the resin insert thicker than the carrier base material; forming step of preparing the resin insert , formed on the inner peripheral surface of the holding hole in a non-adhesive manner with a peel strength of 10N or more and 50N or less; and the initial grinding step, using the above-mentioned double-sided grinding device, will be formed by the above-mentioned carrier base material and the above-mentioned resin insert. The constituted carrier performs initial grinding with two or more stages of loading.

若樹脂嵌入物未黏接至固持孔的內周面、且剝離強度係50N以下，則可利用進行起始研磨，而將樹脂嵌入物的上下方向的位置調整成：使樹脂嵌入物與載具母材之高低差量之表面側與背面側之差（表背差）變小，亦即，使樹脂嵌入物的突出狀態更進一步表背對稱。又，若剝離強度係10N以上，則可抑制因研磨而使樹脂嵌入物自載具母材剝離。 又，可利用將起始研磨之際的負載定為二階段以上之多階段，而可於第一階段的研磨使樹脂嵌入物與載具母材之高低差量降低、並且將樹脂嵌入物調整至最合宜位置，此外還於第二階段以後的研磨進一步降低樹脂嵌入物與載具母材之高低差量，容易降低。再者，可藉由使用如上述製作之載具來將晶圓進行雙面研磨，而獲得邊緣的ZDD的表背差小之研磨晶圓。此外，「將起始研磨之際的負載設定為二階段以上之多階段」包含施加相同負載來進行複數次起始研磨之情形。If the resin insert is not adhered to the inner peripheral surface of the holding hole and the peel strength is 50 N or less, the initial grinding can be used to adjust the position of the resin insert in the vertical direction so that the resin insert and the carrier The difference between the front side and the back side of the height difference of the base material (front and back difference) becomes smaller, that is, the protruding state of the resin insert is made more symmetrical between the front and the back. Moreover, if the peeling strength is 10 N or more, peeling of the resin insert from the carrier base material due to grinding can be suppressed. In addition, by setting the load at the time of the initial grinding to two or more stages, the first-stage grinding can reduce the height difference between the resin insert and the carrier base material, and adjust the resin insert. To the most suitable position, in addition, the grinding after the second stage further reduces the height difference between the resin insert and the carrier base material, which is easy to reduce. Furthermore, by using the above-fabricated carrier to grind the wafer on both sides, a ground wafer with a small surface-to-back difference of ZDD at the edge can be obtained. In addition, "setting the load at the time of the initial polishing to two or more stages" includes the case where the same load is applied and the initial polishing is performed a plurality of times.

又，前述起始研磨步驟之中，可將前述二階段以上之多階段的第一階段的負載設定為150gf/cm2 以上250gf/cm2 以下。 若第一階段的負載係150gf/cm2 （14.7kPa）以上，則就調整樹脂嵌入物的位置而言，係充份的負載。又，若係250gf/cm2 （24.5kPa）以下，則可進一步有效抑制非黏接之樹脂嵌入物因與研磨布之摩擦力而自載具母材剝離。And, in the initial grinding step, the first stage may be as much as two-stage load stage is set to more than 150gf / cm 2 or more 250gf / cm 2 or less. If the load in the first stage is 150 gf/cm 2 (14.7 kPa) or more, it is a sufficient load for adjusting the position of the resin insert. In addition, if it is 250 gf/cm 2 (24.5 kPa) or less, the non-bonded resin insert can be further effectively suppressed from being peeled off from the carrier base material due to friction with the polishing cloth.

又，前述起始研磨步驟之中，可將前述二階段以上之多階段的第一階段的負載，設定為大於第二階段的負載。 若起始研磨的第一階段的負載大於第二階段的負載，則可更有效抑制已於第一階段的研磨調整之樹脂嵌入物的位置會於第二階段的研磨錯位。Moreover, in the said initial grinding|polishing process, the load of the 1st stage of the said two or more stages can be set to be larger than the load of the 2nd stage. If the load of the first stage of the initial grinding is greater than the load of the second stage, the position of the resin insert adjusted in the first stage of grinding can be more effectively prevented from being displaced in the second stage of grinding.

又，本發明提供一種晶圓的雙面研磨方法，其中，將前述晶圓固持在利用上述雙面研磨裝置用載具的製造方法所製造之雙面研磨裝置用載具的前述固持孔，並夾入至前述雙面研磨裝置的前述上下磨盤之間，使前述上下磨盤旋轉，藉以進行前述晶圓的雙面研磨，將該雙面研磨後的前述晶圓的邊緣之ZDD的表背差設定為5nm以下。 若係如此晶圓的雙面研磨方法，則雙面研磨後之晶圓的邊緣之ZDD的表背差比往昔降低。In addition, the present invention provides a method for double-side polishing of a wafer, wherein the wafer is held in the holding hole of a carrier for a double-side polishing apparatus manufactured by the method for manufacturing a carrier for a double-side polishing apparatus, and It is sandwiched between the upper and lower grinding discs of the double-sided polishing device, and the upper and lower grinding discs are rotated to perform the double-sided grinding of the wafer, and the ZDD front and back difference of the edge of the wafer after the double-sided grinding is set. is 5 nm or less. In the case of the double-sided polishing method of such a wafer, the ZDD difference between the edges of the wafer after double-sided polishing is lower than before.

又，前述雙面研磨之中，進行負載係二階段以上之多階段之雙面研磨。 可利用將雙面研磨設定為二階段以上之多階段研磨，而於第一階段的研磨使載具的樹脂嵌入物的位置穩定，還可於第二階段以後之研磨進行晶圓之研磨，更有效達成ZDD的改善。In addition, among the above-mentioned double-sided polishing, a multi-stage double-sided polishing with a load system of two or more stages is performed. The double-sided polishing can be set as multi-stage polishing with more than two stages, and the position of the resin insert of the carrier can be stabilized in the polishing in the first stage, and the wafer can be polished in the polishing after the second stage. Effectively achieve the improvement of ZDD.

又，前述雙面研磨之中，可將前述二階段以上之多階段的第一階段的負載設定為150gf/cm2 以上250gf/cm2 以下。 若係如此負載，則就使樹脂嵌入物的位置穩定而言係充份的負載，且可更有效抑制樹脂嵌入物自載具母材剝離。In addition, in the double-side polishing, the first stage may be as much as two-stage load stage is set to more than 150gf / cm 2 or more 250gf / cm 2 or less. Such a load is a sufficient load for stabilizing the position of the resin insert, and the peeling of the resin insert from the carrier base material can be suppressed more effectively.

又，前述雙面研磨之中，可將前述二階段以上之多階段的第一階段的負載設定為大於第二階段的負載。 若係如此負載，則可更有效抑制已於第一階段的研磨穩定之樹脂嵌入物的位置會於進行第二階段的研磨之際錯位。 [發明之效果]In addition, in the above-mentioned double-sided polishing, the load of the first stage of the two or more stages may be set to be larger than the load of the second stage. With such a load, the position of the resin insert stabilized in the first-stage polishing can be more effectively suppressed from being displaced when the second-stage polishing is performed. [Effect of invention]

若係本發明之雙面研磨裝置用載具的製造方法及晶圓的雙面研磨方法，則可容易降低樹脂嵌入物與載具母材之高低差量的表背差，就結果而言，可於使用晶圓的雙面研磨之際，降低研磨後之晶圓的ZDD的表背差。According to the method for manufacturing a carrier for a double-sided polishing apparatus and the method for polishing a wafer on both sides of the present invention, it is possible to easily reduce the front-to-back difference in the height difference between the resin insert and the carrier base material, and as a result, When using the double-sided polishing of the wafer, the ZDD difference between the front and the back of the polished wafer can be reduced.

[實施發明之較佳形態][Preferred form for carrying out the invention]

如同上述，吾人尋求一種雙面研磨裝置用載具的製造方法，可降低樹脂嵌入物與載具母材之高低差量的表背差。As mentioned above, we seek a manufacturing method of a carrier for a double-sided polishing device, which can reduce the front-back difference of the height difference between the resin insert and the carrier base material.

本案發明者重複深入研究上述問題之結果，發現可藉由下述技術內容解決問題，而完成本案發明：於不如同往昔技術進行樹脂嵌入物之黏接之狀況下，利用調整嵌合的楔形物形狀的個數或樹脂嵌入物的外徑等，而準備將樹脂嵌入物的自載具母材之剝離強度設定為10N以上50N以下之載具，且於樹脂嵌入物的起始研磨之際將負載設定為二階段以上之多階段。The inventors of the present application have repeatedly researched the above problems and found that the problems can be solved by the following technical content, and the present invention has been completed: under the condition that the bonding of resin inserts is different from the previous technology, the wedge-shaped objects that adjust the fitting are used. The number of shapes or the outer diameter of the resin insert, etc., prepare a carrier with the peel strength of the resin insert from the base material of the carrier set to 10N or more and 50N or less, and at the time of the initial grinding of the resin insert The load is set to two or more stages.

以下，針對本發明，就實施態樣的一例而言，一邊參照圖一邊進行詳細說明，但本發明不限定於此。Hereinafter, an example of an embodiment of the present invention will be described in detail with reference to the drawings, but the present invention is not limited to this.

圖2係利用本發明的製造方法而製造之雙面研磨裝置用載具的俯視圖。 載具1具有：載具母材3，形成有將晶圓加以固持之固持孔2；以及樹脂嵌入物4，以非黏接的方式形成於固持孔2的內周部。此外，在此，顯示一個固持孔2之載具母材3，但本發明不限定於此，亦可具有複數個固持孔2。又，載具母材3的材質不特別限定，例如可設定為金屬基板。就樹脂嵌入物4的例而言，例如圖3所示，可設定成由環狀部4a與從環狀部4a起往外方向突出之楔形物4b所構成者。楔形物4b的個數或環狀部4a的外徑不特別限定。然而，將後述剝離強度調整為10N以上50N以下來形成。再者，使高低差的表背差小（例如，高低差量係11.034μm左右、表背差係11.77μm左右）。It is a top view of the carrier for double-sided polishing apparatuses manufactured by the manufacturing method of this invention. The carrier 1 includes a carrier base material 3 formed with holding holes 2 for holding the wafer, and a resin insert 4 formed on the inner peripheral portion of the holding holes 2 in a non-adhesive manner. In addition, although the carrier base material 3 of one holding hole 2 is shown here, the present invention is not limited to this, and a plurality of holding holes 2 may be provided. In addition, the material of the carrier base material 3 is not particularly limited, and can be set to, for example, a metal substrate. As an example of the resin insert 4, for example, as shown in FIG. 3, it can be set as the thing comprised by the annular part 4a and the wedge 4b which protrudes outward from the annular part 4a. The number of the wedges 4b and the outer diameter of the annular portion 4a are not particularly limited. However, the peel strength to be described later is adjusted to 10N or more and 50N or less. Furthermore, the height difference between the front and back is made small (for example, the height difference is about 11.034 μm, and the front and back difference is about 11.77 μm).

如此載具1，例如使用於圖4所示之四方向（4way）式的雙面研磨裝置10之中將晶圓W加以雙面研磨之際。雙面研磨裝置10，具備上下相向設置之上磨盤11與下磨盤12。上下磨盤11、12分別貼附有研磨布13。上磨盤11與下磨盤12之間的中心部設有太陽齒輪14、周緣部設有內齒輪15。 而且，太陽齒輪14及內齒輪15的各齒部囓合有載具1的外周齒，且上磨盤11及下磨盤12藉由未圖示之驅動源而旋轉，伴隨與此，載具1自轉並且在太陽齒輪14的周圍公轉。此時，利用載具1的固持孔2而固持之晶圓W的雙面，係由上下研磨布13所同時研磨。晶圓W研磨時，自料漿供給裝置16將料漿17供給至晶圓W的研磨面。In this way, the carrier 1 is used, for example, when the wafer W is double-sided in the 4-way type double-sided polishing apparatus 10 shown in FIG. 4 . The double-sided polishing apparatus 10 includes an upper grinding disc 11 and a lower grinding disc 12 which are arranged to face each other up and down. The upper and lower grinding discs 11 and 12 are respectively attached with a grinding cloth 13 . A sun gear 14 is provided at the center portion between the upper grinding disc 11 and the lower grinding disc 12 , and an internal gear 15 is provided at the peripheral portion. In addition, the tooth portions of the sun gear 14 and the inner gear 15 are meshed with the outer peripheral teeth of the carrier 1, and the upper grinding disc 11 and the lower grinding disc 12 are rotated by a driving source (not shown), and the carrier 1 rotates along with this. It revolves around the sun gear 14 . At this time, both sides of the wafer W held by the holding holes 2 of the carrier 1 are simultaneously polished by the upper and lower polishing cloths 13 . When the wafer W is polished, the slurry 17 is supplied to the polishing surface of the wafer W from the slurry supply device 16 .

以下，說明使用圖4的雙面研磨裝置10之雙面研磨裝置用載具的製造方法及晶圓的雙面研磨方法。圖1係將本發明之雙面研磨裝置用載具的製造方法及晶圓的雙面研磨方法的概略加以顯示之流程圖。 首先，如同圖1的步驟1，準備載具母材3、及比其更厚之樹脂嵌入物4。此外，在此，使用一個固持孔2之載具母材3，但本發明不限定於此，可具有複數個固持孔2。 載具母材3及樹脂嵌入物4的材質不特別限定，載具母材3例如係不鏽鋼或鈦等金屬製，或可設定成在其施行有表面固化處理者。又，樹脂嵌入物4，例如設定為硬質樹脂製者。Hereinafter, the manufacturing method of the carrier for double-sided polishing apparatuses using the double-sided polishing apparatus 10 of FIG. 4, and the double-sided polishing method of a wafer are demonstrated. FIG. 1 is a flow chart showing the outline of a method for manufacturing a carrier for a double-side polishing apparatus and a method for double-side polishing of a wafer according to the present invention. First, as in step 1 of FIG. 1 , a carrier base material 3 and a resin insert 4 thicker than the carrier base material 3 are prepared. In addition, although the carrier base material 3 of one holding hole 2 is used here, the present invention is not limited to this, and a plurality of holding holes 2 may be provided. The material of the carrier base material 3 and the resin insert 4 is not particularly limited, and the carrier base material 3 is made of, for example, a metal such as stainless steel or titanium, or can be set to be surface-cured. In addition, the resin insert 4 is made of hard resin, for example.

其次，如同圖1的步驟2，將樹脂嵌入物4形成於固持孔2的內周面。樹脂嵌入物4的形成方法不特別限定，例如可藉由嵌入或射出成型來形成。 在此，於不進行樹脂嵌入物4與載具母材3之黏接之狀況下，調整如圖3所示之嵌合的楔形物4b的個數及形狀、或樹脂嵌入物4的外徑等，藉以將剝離強度設定為10N以上50N以下。 在此所謂之剝離強度，係指：例如將圖3所示之測量點5利用測力計從上表面按壓，而使樹脂嵌入物4自載具母材3剝離之最大負載。Next, as in Step 2 of FIG. 1 , the resin insert 4 is formed on the inner peripheral surface of the holding hole 2 . The method for forming the resin insert 4 is not particularly limited, and for example, it can be formed by insert molding or injection molding. Here, without bonding the resin insert 4 and the carrier base material 3, the number and shape of the wedges 4b to be fitted as shown in FIG. 3, or the outer diameter of the resin insert 4 are adjusted. etc., thereby setting the peel strength to 10N or more and 50N or less. The peeling strength as used herein refers to, for example, the maximum load at which the resin insert 4 is peeled from the carrier base material 3 by pressing the measuring point 5 shown in FIG. 3 from the upper surface with a dynamometer.

若剝離強度係50N以下，則可於其次的起始研磨步驟之中，將樹脂嵌入物4的上下方向的位置（針對載具母材3之厚度方向的位置）調整成使樹脂嵌入物4與載具母材3之高低差量的表面側與背面側的差係小。又，若剝離強度係10N以上，則可抑制因研磨而使樹脂嵌入物4從載具母材3剝離。 此外，例如，就楔形物4b而言可使用個數係100個以下、高度係5mm以下者，藉以更確實達成50N以下的剝離強度。If the peel strength is 50 N or less, the position of the resin insert 4 in the up-down direction (position in the thickness direction of the carrier base material 3 ) can be adjusted in the next initial polishing step so that the resin insert 4 and the The difference between the front side and the back side of the height difference of the carrier base material 3 is small. Moreover, if the peeling strength is 10 N or more, peeling of the resin insert 4 from the carrier base material 3 due to grinding can be suppressed. In addition, for example, the wedge 4b can be used with a number of 100 or less and a height of 5 mm or less, so that a peel strength of 50 N or less can be achieved more reliably.

其次，如同圖1的步驟3，進行載具1的起始研磨，製造下述載具1：降低樹脂嵌入物4與載具母材3之高低差量，並且表背高低差量的差係少。起始研磨，可於下述狀態進行雙面研磨：將載具1裝配至如圖4所示之雙面研磨裝置10，且固持孔2未固持晶圓W。此外，研磨布13或料漿17的種類不特別限定，可使用與往昔方法同樣者。Next, as in step 3 of FIG. 1 , the initial grinding of the carrier 1 is performed to manufacture the following carrier 1: the height difference between the resin insert 4 and the carrier base material 3 is reduced, and the difference in the height difference between the front and back is reduced. few. For the initial polishing, double-side polishing can be performed in the following state: the carrier 1 is assembled to the double-side polishing apparatus 10 as shown in FIG. 4 , and the wafer W is not held in the holding hole 2 . In addition, the type of the polishing cloth 13 or the slurry 17 is not particularly limited, and the same as the conventional method can be used.

此時，將起始研磨之際的負載設定為二階段以上之多階段。亦即，施加負載而進行複數次起始研磨。藉此，首先，可利用第一階段的研磨來降低樹脂嵌入物4與載具母材3之高低差量，並將樹脂嵌入物4調整至最合宜位置。在此所謂之最合宜位置，係指例如樹脂嵌入物4在表面側與背面側之突出狀態之差幾乎同等之位置。其次，可利用第二階段以後之研磨而進一步降低樹脂嵌入物4與載具母材3之高低差量。其結果，可獲得表面側與背面側的高低差量之差較往昔製品更降低之優異的載具。此外，多階段負載的階段數係複數即可，可設定成僅二階段，或者亦可設定成三階段以上。關於此複數之階段數，只要例如每次因應於上述高低差量或高低差量的表背差等而決定即可，不決定階段數的上限值。At this time, the load at the time of starting grinding is set to two or more stages. That is, a load is applied to perform a plurality of initial grindings. Therefore, firstly, the first-stage grinding can be used to reduce the height difference between the resin insert 4 and the carrier base material 3, and adjust the resin insert 4 to the most suitable position. The most suitable position here means, for example, a position at which the difference between the protruding states of the resin insert 4 on the front side and the back side is almost the same. Secondly, the level difference between the resin insert 4 and the carrier base material 3 can be further reduced by the grinding after the second stage. As a result, it is possible to obtain an excellent carrier in which the difference in height difference between the front side and the back side is lower than that of conventional products. In addition, the number of stages of the multi-stage load may be a complex number, and may be set to only two stages, or may be set to three or more stages. The number of steps of this plural number may be determined every time according to the height difference or the front and back difference of the height difference, for example, and the upper limit of the number of steps is not determined.

此時，例如可將第一階段的負載設定成150gf/cm2 以上250gf/cm2 以下。若係150gf/cm2 以上，則對於調整樹脂嵌入物4的位置而言係充份負載。又，若係250gf/cm2 以下，則可更有效抑制非黏接之樹脂嵌入物4因與研磨布之摩擦力而自載具母材3剝離。 又，可將第一階段的負載設定成大於第二階段的負載。例如，相對於上述150gf/cm2 以上250gf/cm2 以下之第一階段的負載，可將第二階段的負載設定為200gf/cm2 （19.6kPa）以下、且小於第一階段的負載之值。如此一來，可更有效抑制已於第一階段的研磨調整之樹脂嵌入物4的位置會於進行第二階段的研磨之際移動而錯位。此外，負載可設定為各階段係相同值，亦可與上述相反，將第一階段的負載設定為小於第二階段的負載，尚可將第一階段的負載設定為大於第二階段的負載，藉以能效率良好地縮小高低差量的表背差。In this case, for example, the load can be set to 150gf / cm 2 or more 250gf / cm 2 or less in the first stage. If it is 150 gf/cm 2 or more, it is a sufficient load for adjusting the position of the resin insert 4 . In addition, if it is 250 gf/cm 2 or less, the non-bonded resin insert 4 can be more effectively suppressed from peeling off from the carrier base material 3 due to the frictional force with the polishing cloth. Also, the load in the first stage may be set larger than the load in the second stage. For example, with respect to the load of the first Phase 2 of the above-described 150gf / cm 2 or more 250gf / cm, the second stage may be set to a load 200gf / cm 2 (19.6kPa) or less, and less than the value of the load of the first stage . In this way, the position of the resin insert 4 adjusted in the first-stage polishing can be more effectively suppressed from being displaced and displaced when the second-stage polishing is performed. In addition, the load can be set to be the same value in each stage, or, contrary to the above, the load of the first stage can be set to be smaller than the load of the second stage, and the load of the first stage can be set to be larger than the load of the second stage. Thereby, the difference between the front and the back of the height difference can be effectively reduced.

可藉由上述步驟1～3，來製造已使樹脂嵌入物4與載具母材3之高低差量的表背差降低之載具1。The carrier 1 in which the height difference between the resin insert 4 and the carrier base material 3 has been reduced in front and back can be manufactured by the above steps 1 to 3.

而且，如圖1的步驟4所示，使用所製造之載具1來進行晶圓的雙面研磨。晶圓的雙面研磨，係藉由下述方式進行：將晶圓W固持至載具1的固持孔2，並夾入至雙面研磨裝置10的上磨盤11與下磨盤12之間，使上磨盤11與下磨盤12旋轉。此外，研磨布13或料漿17的種類不特別限定，可使用與往昔方法同樣者。可藉由使用本發明製造之載具1，而容易獲得使ZDD的表背差充份降低之研磨晶圓。具體而言，可獲得邊緣之ZDD的表背差係5nm以下之晶圓。ZDD的表背差越小越佳，下限值可設定為例如0nm。Then, as shown in step 4 of FIG. 1 , the wafer is polished on both sides using the manufactured carrier 1 . The double-sided polishing of the wafer is performed by the following method: the wafer W is held in the holding hole 2 of the carrier 1, and sandwiched between the upper grinding table 11 and the lower grinding table 12 of the double-sided grinding device 10, so that the The upper grinding disc 11 and the lower grinding disc 12 rotate. In addition, the type of the polishing cloth 13 or the slurry 17 is not particularly limited, and the same as the conventional method can be used. By using the carrier 1 manufactured by the present invention, it is easy to obtain a polished wafer that can sufficiently reduce the front-to-back difference of ZDD. Specifically, a wafer with a surface-to-background difference of 5 nm or less of ZDD at the edge can be obtained. The smaller the surface-back difference of ZDD, the better, and the lower limit can be set to, for example, 0 nm.

此時，可與步驟3的載具的起始研磨同樣將雙面研磨之際的負載設定為二階段以上之多階段。如此一來，可使樹脂嵌入物4穩定在最合宜位置，還進行晶圓之研磨，可更有效追求ZDD之改善。關於此雙面研磨之際的負載的階段數，例如每次因應研磨量或研磨時間等決定即可，不決定階段數的上限值。 又，可將第一階段的負載設定在150gf/cm2 以上250gf/cm2 以下。如此一來，對於使樹脂嵌入物4的位置穩定而言係充份的負載，且可更有效抑制樹脂嵌入物自載具母材剝離。 又，可將第一階段的負載設定為大於第二階段的負載。如此一來，可更有效抑制已利用第一階段的研磨穩定之樹脂嵌入物4的位置會於進行第二階段的研磨之際移動而錯位。 [實施例]At this time, the load at the time of double-sided polishing can be set to two or more stages, similarly to the initial polishing of the carrier in Step 3. In this way, the resin insert 4 can be stabilized at the most suitable position, and the wafer can be polished, so that the improvement of ZDD can be more effectively pursued. The number of stages of the load at the time of this double-sided polishing may be determined according to, for example, the polishing amount or polishing time, and the upper limit of the number of stages is not determined. Further, the first stage may be set to 2 or less load 150gf / cm 2 or more 250gf / cm. In this way, it is a sufficient load for stabilizing the position of the resin insert 4, and the peeling of the resin insert from the carrier base material can be suppressed more effectively. Also, the load in the first stage may be set to be larger than the load in the second stage. In this way, the position of the resin insert 4 that has been stabilized by the first-stage polishing can be more effectively suppressed from moving and dislocating when the second-stage polishing is performed. [Example]

以下，顯示實施例及比較例而更具體說明本發明，但本發明不限定於實施例。Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to an Example.

（實施例1） 依循圖1的流程，進行本發明之雙面研磨裝置用載具的製造及直徑300mm之晶圓的雙面研磨。如圖2及3所示，將樹脂嵌入物4（材質：FRP）以非黏接之方式形成於載具母材3（材質：鈦）的固持孔2的內周部。此際，利用將楔形物4b的個數設定為80個，而製造樹脂嵌入物4的剝離強度係40N者。(Example 1) Following the flow of FIG. 1 , the manufacturing of the carrier for a double-side polishing apparatus of the present invention and the double-side polishing of a wafer with a diameter of 300 mm were performed. As shown in FIGS. 2 and 3 , a resin insert 4 (material: FRP) is formed on the inner peripheral portion of the holding hole 2 of the carrier base material 3 (material: titanium) in a non-adhesive manner. At this time, by setting the number of the wedges 4b to 80, the peeling strength of the resin insert 4 is 40N.

針對載具1的起始研磨及晶圓的雙面研磨，就如圖4所示之雙面研磨裝置10而言，使用係四方向（4way）方式之雙面研磨裝置之不二越機械製DSP-20B。就研磨布13而言使用蕭氏A硬度90的發泡胺基甲酸酯襯墊、且就料漿17而言使用含二氧化矽砥粒、平均粒徑35nm、砥粒濃度1.0wt%、pH10.5、KOH基底者。 又，載具的起始研磨與晶圓的雙面研磨二者之中，設定成二階段負載，於第一階段施加150gf/cm2 的負載藉以使嵌入物的位置穩定，並於第二階段施加100gf/cm2 （9.8kPa）的負載而進行研磨。For the initial polishing of the carrier 1 and the double-sided polishing of the wafer, as for the double-sided polishing apparatus 10 shown in FIG. 20B. For the polishing cloth 13, a foamed urethane liner with Shore A hardness of 90 was used, and for the slurry 17, a silica-containing pellet was used, the average particle size was 35 nm, and the pellet concentration was 1.0 wt%. pH10.5, KOH base. In addition, in the initial grinding of the carrier and the double-sided grinding of the wafer, a two-stage load is set, and a load of 150 gf/cm 2 is applied in the first stage to stabilize the position of the insert, and in the second stage Grinding was performed by applying a load of 100 gf /cm 2 (9.8 kPa).

（比較例1） 起始研磨與雙面研磨二者之中，設定成施加100gf/cm2 的負載而僅進行一次研磨之一階段負載，此外，以與實施例1同樣的方式進行載具之製造及晶圓的雙面研磨。(Comparative Example 1) In both the initial polishing and the double-sided polishing, a load of 100 gf/cm 2 was applied, and only one stage of the polishing was performed. In addition, in the same manner as in Example 1, the loading of the carrier was carried out. Manufacturing and double-sided grinding of wafers.

（比較例2） 將載具的樹脂嵌入物的楔形物的個數設定為130個，藉以將剝離強度設定為60N，此外，以與實施例1同樣的方式進行載具之製造及晶圓的雙面研磨。(Comparative Example 2) The number of wedges of the resin insert of the carrier was set to 130, whereby the peel strength was set to 60 N, and the manufacturing of the carrier and the wafer fabrication were carried out in the same manner as in Example 1. Double-sided grinding.

（比較例3） 起始研磨與雙面研磨二者之中，設定成施加100gf/cm2 的負載而僅進行一次研磨之一階段負載，此外，以與比較例2同樣之方式，進行載具之製造及晶圓的雙面研磨。(Comparative Example 3) In both the initial polishing and the double-sided polishing, a load of 100 gf/cm 2 was applied, and only one stage of polishing was performed, and the carrier was carried out in the same manner as in Comparative Example 2. manufacturing and double-sided polishing of wafers.

（比較例4） 就載具而言，採用將樹脂嵌入物（形狀：環狀且無楔形物）黏接固定至載具母材而成之黏接載具，並將其剝離強度設定為200N。此外，以與實施例1同樣之方式，進行載具之製造及晶圓的雙面研磨。(Comparative Example 4) As a carrier, an adhesive carrier obtained by bonding and fixing a resin insert (shape: ring-shaped without wedge) to a carrier base material was used, and its peel strength was set to 200N . In addition, in the same manner as in Example 1, the manufacture of the carrier and the double-sided polishing of the wafer were performed.

（比較例5） 起始研磨與雙面研磨二者之中，設定成施加100gf/cm2 的負載而僅進行一次研磨之一階段負載，此外，以與比較例4同樣之方式，進行載具之製造及晶圓的雙面研磨。(Comparative Example 5) In both the initial polishing and the double-sided polishing, a load of 100 gf/cm 2 was applied and only one stage of polishing was performed. In addition, the carrier was carried out in the same manner as in Comparative Example 4. manufacturing and double-sided polishing of wafers.

各載具的樹脂嵌入物與載具母材之高低差量之表面背面如下。實施例1：0.932μm；比較例1：7.192μm；比較例2：7.71μm；比較例3：6.286μm；比較例4：12.272μm；比較例5：14.378μm。The surface and back of the height difference between the resin insert of each carrier and the carrier base material are as follows. Example 1: 0.932 μm; Comparative Example 1: 7.192 μm; Comparative Example 2: 7.71 μm; Comparative Example 3: 6.286 μm; Comparative Example 4: 12.272 μm; Comparative Example 5: 14.378 μm.

針對實施例1及比較例1-5之雙面研磨後的晶圓W，以條件NH4 OH：H2 O2 ：H2 O=1：1：15進行SC-1清洗。就平坦性（flatness）而言，使用KLA製的Wafersight1來測量清洗後晶圓，且自邊緣起除去2mm而計算出ZDD，就表面側（Front部）與背面側（Back部）之差而言，取一批量5片的平均來標繪（plot）。將其結果示於圖5。For the wafers W after double-side polishing in Example 1 and Comparative Examples 1-5, SC-1 cleaning was performed under the condition of NH 4 OH:H 2 O 2 :H 2 O=1:1:15. For flatness, the wafer after cleaning was measured using Wafersight1 manufactured by KLA, and ZDD was calculated by removing 2 mm from the edge, and the difference between the front side (Front part) and the back side (Back part) was calculated. , take the average of a batch of 5 pieces to plot (plot). The results are shown in FIG. 5 .

於不利用多階段負載進行起始研磨及雙面研磨之比較例1、或樹脂嵌入物的剝離強度大之比較例2-5之中，雙面研磨後之晶圓的邊緣中之ZDD的表背差大（皆大於5nm）。另一方面，吾人知悉若使用以多階段負載進行起始研磨及雙面研磨、且剝離強度係50N以下之實施例1的載具來進行晶圓的雙面研磨，則可將晶圓的邊緣中之ZDD的表背差降低至5nm以下（更具體而言為1nm左右）。In Comparative Example 1 in which the initial polishing and double-sided polishing were not performed with multi-stage loading, or in Comparative Examples 2-5 in which the peel strength of the resin insert was high, the ZDD in the edge of the wafer after double-sided polishing was shown. Large back difference (all greater than 5nm). On the other hand, we know that if the carrier of Example 1 is used for initial polishing and double-sided polishing with multi-stage loading, and the peel strength is less than 50N for double-sided polishing of the wafer, the edge of the wafer can be polished. Among them, the surface-back difference of ZDD is reduced to 5 nm or less (more specifically, about 1 nm).

（實施例2） 將載具的樹脂嵌入物的楔形物的個數設定為100個，藉以將剝離強度設定成50N，此外，以與實施例1同樣之方式進行載具之製造及晶圓的雙面研磨。(Example 2) The number of wedges of the resin insert of the carrier was set to 100, whereby the peel strength was set to 50N, and the manufacturing of the carrier and the wafer were carried out in the same manner as in Example 1. Double-sided grinding.

（實施例3） 將載具的樹脂嵌入物的楔形物的個數設定為20個，藉以將剝離強度設定為10N，此外，以與實施例1同樣之方式進行載具之製造及晶圓的雙面研磨。(Example 3) The number of wedges of the resin insert of the carrier was set to 20, whereby the peel strength was set to 10N, and the manufacturing of the carrier and the wafer fabrication were carried out in the same manner as in Example 1. Double-sided grinding.

（比較例6） 將載具的樹脂嵌入物的楔形物的個設定為10個，藉以將剝離強度設定為5N，此外，以與實施例1同樣之方式進行載具之製造後，於起始研磨時樹脂嵌入物會脫落，因此中止製造。(Comparative Example 6) The number of wedges of the resin insert of the carrier was set to 10, whereby the peel strength was set to 5N, and the carrier was manufactured in the same manner as in The resin inserts fell off during grinding, so manufacturing was discontinued.

各載具之樹脂嵌入物與載具母材之高低差量的表背差如下。實施例2：3.912μm；實施例3：3.514μm。又，雙面研磨後之晶圓的邊緣之ZDD的表背差如下。實施例2：4.7nm；實施例3：4.5nm。又，於將剝離強度小於10N之狀態下進行研磨之比較例6之中，吾人確認研磨時樹脂嵌入物脫落。The difference between the front and back of the height difference between the resin insert of each carrier and the carrier base material is as follows. Example 2: 3.912 μm; Example 3: 3.514 μm. In addition, the front-to-back difference of ZDD at the edge of the wafer after double-sided polishing is as follows. Example 2: 4.7 nm; Example 3: 4.5 nm. In addition, in Comparative Example 6 in which the peel strength was less than 10N, it was confirmed that the resin insert fell off during the grinding.

如上所示，若係本發明之雙面研磨裝置用載具的製造方法，則可降低樹脂嵌入物與載具母材之高低差量之表背差，就結果而言，可降低晶圓的ZDD的表背差。As described above, according to the method for manufacturing a carrier for a double-sided polishing apparatus of the present invention, the front-to-back difference in the height difference between the resin insert and the carrier base material can be reduced, and as a result, the wafer thickness can be reduced. The back difference of ZDD.

此外，本發明不限定於上述實施形態。上述實施形態係例示，具有與本發明之發明申請專利範圍記載之技術思想實質同一之構成、並發揮同樣作用效果者，皆包含於本發明的技術範圍。In addition, this invention is not limited to the said embodiment. The above-described embodiments are examples, and those having substantially the same configuration as the technical idea described in the scope of the invention claim of the present invention and exhibiting the same effects are all included in the technical scope of the present invention.

11:上磨盤 12:下磨盤 13:研磨布 14:太陽齒輪 15:內齒輪 16:料漿供給裝置 17:料漿 1:載具 2:固持孔 3:載具母材 4:樹脂嵌入物 4a:環狀部 4b:楔形物 W:晶圓11: Upper grinding disc 12: Lower grinding disc 13: Abrasive cloth 14: Sun gear 15: Internal gear 16: Slurry supply device 17: Slurry 1: Vehicle 2: Holding hole 3: Vehicle base material 4: Resin inserts 4a: annular part 4b: Wedge W: Wafer

圖1係將本發明之雙面研磨裝置用載具的製造方法及晶圓的雙面研磨方法的概略加以顯示之流程圖。 圖2係將利用本發明的製造方法而製造之雙面研磨裝置用載具的一例加以顯示之俯視圖。 圖3係將樹脂嵌入物的剝離強度的測量點加以顯示之放大圖。 圖4係將可以使用在本發明之雙面研磨裝置用載具的製造方法之雙面研磨裝置的一例加以顯示之概略剖視圖。 圖5係將實施例1及比較例1-5中之雙面研磨後的晶圓的邊緣之ZDD的表背差的測量結果加以顯示之圖表。 圖6係將往昔技術所行之載具的起始研磨後之樹脂嵌入物與載具母材之高低差概貌加以顯示之圖表。FIG. 1 is a flow chart showing the outline of a method for manufacturing a carrier for a double-side polishing apparatus and a method for double-side polishing of a wafer according to the present invention. It is a top view which shows an example of the carrier for double-sided polishing apparatuses manufactured by the manufacturing method of this invention. FIG. 3 is an enlarged view showing measurement points of the peel strength of the resin insert. FIG. 4 is a schematic cross-sectional view showing an example of a double-sided polishing apparatus that can be used in the manufacturing method of the carrier for a double-sided polishing apparatus of the present invention. FIG. 5 is a graph showing the measurement results of the ZDD front-to-back difference of the edge of the wafer after double-side grinding in Example 1 and Comparative Examples 1-5. FIG. 6 is a graph showing an overview of the height difference between the resin insert and the base material of the carrier after the initial grinding of the carrier performed by the prior art.

Claims (8)

一種雙面研磨裝置用載具的製造方法，該雙面研磨裝置用載具，使用於具備貼附有研磨布之上磨盤及下磨盤的雙面研磨裝置，且具有：載具母材，形成有用以固持晶圓之固持孔；以及樹脂嵌入物，沿著該固持孔的內周面配置，且形成有與該晶圓的外周部銜接之內周部； 該雙面研磨裝置用載具的製造方法，其特徵為包括： 準備步驟，準備該載具母材、及比該載具母材更厚之該樹脂嵌入物； 形成步驟，將該樹脂嵌入物，以非黏接且剝離強度係10N以上50N以下之方式形成於該固持孔的內周面；以及 起始研磨步驟，使用該雙面研磨裝置，將由該載具母材及該樹脂嵌入物所構成之載具，進行負載係二階段以上之多階段之起始研磨。A manufacturing method of a carrier for a double-sided polishing device, the carrier for a double-sided polishing device is used in a double-sided polishing device having an upper grinding disc and a lower grinding disc attached to a polishing cloth, and has: a carrier base material, forming There is a holding hole for holding the wafer; and a resin insert is arranged along the inner peripheral surface of the holding hole, and an inner peripheral portion connected to the outer peripheral portion of the wafer is formed; The manufacturing method of the carrier for the double-sided polishing device is characterized by comprising: The preparation step is to prepare the carrier base material and the resin insert thicker than the carrier base material; forming step, forming the resin insert on the inner peripheral surface of the holding hole in a non-adhesive manner with a peel strength of 10N or more and 50N or less; and In the initial grinding step, using the double-sided grinding device, the carrier composed of the carrier base material and the resin insert is subjected to a multi-stage initial grinding with a load system of two or more stages. 如請求項1之雙面研磨裝置用載具的製造方法，其中， 於該起始研磨步驟之中，將該二階段以上之多階段的第一階段的負載設定為150gf/cm2 以上250gf/cm2 以下。The method for manufacturing a carrier for a double-sided polishing device according to claim 1, wherein, in the initial polishing step, the load of the first stage of the two or more stages is set to 150 gf/cm 2 or more and 250 gf/ cm 2 or less. 如請求項1或請求項2之雙面研磨裝置用載具的製造方法，其中， 於該起始研磨步驟之中，將該二階段以上之多階段的第一階段的負載設定為大於第二階段的負載。As claimed in claim 1 or claim 2, the manufacturing method of a carrier for a double-sided polishing device, wherein, In the initial grinding step, the load of the first stage of the two or more stages is set to be greater than the load of the second stage. 一種晶圓的雙面研磨方法，其特徵為， 將該晶圓固持在利用如請求項1至請求項3中之任一項之雙面研磨裝置用載具的製造方法所製造之雙面研磨裝置用載具的該固持孔，且夾入至該雙面研磨裝置的該上磨盤與該下磨盤之間，使該上磨盤與該下磨盤旋轉，藉以進行該晶圓的雙面研磨，使該雙面研磨後之該晶圓的邊緣中之ZDD的表背差成為5nm以下。A method for grinding both sides of a wafer, characterized in that: The wafer is held in the holding hole of the carrier for a double-sided polishing device manufactured by the method for manufacturing a carrier for a double-sided polishing device according to any one of claim 1 to claim 3, and sandwiched to Between the upper grinding disc and the lower grinding disc of the double-sided grinding device, the upper grinding disc and the lower grinding disc are rotated, so as to perform double-sided grinding of the wafer, so that the edge of the wafer after the double-sided grinding is The surface-back difference of ZDD is 5 nm or less. 如請求項4之晶圓的雙面研磨方法，其中， 於該雙面研磨之中，進行負載係二階段以上之多階段之雙面研磨。The double-sided polishing method for a wafer as claimed in claim 4, wherein, In this double-sided polishing, multi-stage double-sided polishing with a load of two or more stages is performed. 如請求項5之晶圓的雙面研磨方法，其中， 該雙面研磨之中，將該二階段以上之多階段之第一階段的負載設定為150gf/cm2 以上250gf/cm2 以下。Double-side polishing method according to item 5 of the wafer request, wherein, in the double-side polishing, the first stage of the above two-stage load setting stage as much as 150gf / cm 2 or more 250gf / cm 2 or less. 如請求項5之晶圓的雙面研磨方法，其中， 該雙面研磨之中，將該二階段以上之多階段的第一階段的負載設定為大於第二階段的負載。The double-sided grinding method of a wafer as claimed in claim 5, wherein, In this double-sided polishing, the load of the first stage of the two or more stages is set to be larger than the load of the second stage. 如請求項6之晶圓的雙面研磨方法，其中， 該雙面研磨之中，將該二階段以上之多階段的第一階段的負載設定為大於第二階段的負載。The double-sided polishing method for a wafer as claimed in claim 6, wherein, In this double-sided polishing, the load of the first stage of the two or more stages is set to be larger than the load of the second stage.
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