TW202143302A - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

Info

Publication number: TW202143302A
Authority: TW; Taiwan
Prior art keywords: substrate; wall; area; substrate processing; gap
Prior art date: 2020-03-16

Application number

TW110107442A

Other languages

English (en)

Chinese (zh)

Inventor

田中誠治

依田悠

増澤健二

Original Assignee

日商東京威力科創股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2020-03-16

Filing date

2021-03-03

Publication date

2021-11-16

2021-03-03 Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司

2021-11-16 Publication of TW202143302A publication Critical patent/TW202143302A/zh

Links

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239000000758 substrate Substances 0.000 title claims abstract description 146
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238000005530 etching Methods 0.000 description 20
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238000001020 plasma etching Methods 0.000 description 12
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XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
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238000012423 maintenance Methods 0.000 description 4
239000002245 particle Substances 0.000 description 4
238000003860 storage Methods 0.000 description 4
239000004020 conductor Substances 0.000 description 3
238000001816 cooling Methods 0.000 description 3
230000007423 decrease Effects 0.000 description 3
238000009616 inductively coupled plasma Methods 0.000 description 3
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239000004973 liquid crystal related substance Substances 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
239000000919 ceramic Substances 0.000 description 2
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229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
238000004380 ashing Methods 0.000 description 1
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238000006243 chemical reaction Methods 0.000 description 1
239000007795 chemical reaction product Substances 0.000 description 1
238000010276 construction Methods 0.000 description 1
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239000010949 copper Substances 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
239000003344 environmental pollutant Substances 0.000 description 1
239000010419 fine particle Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
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VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Power Engineering (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Drying Of Semiconductors (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Plasma Technology (AREA)

TW110107442A 2020-03-16 2021-03-03 基板處理裝置及基板處理方法 TW202143302A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2020045381A JP7437985B2 (ja)	2020-03-16	2020-03-16	基板処理装置および基板処理方法
JP2020-045381		2020-03-16

Publications (1)

Publication Number	Publication Date
TW202143302A true TW202143302A (zh)	2021-11-16

Family

ID=77691423

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW110107442A TW202143302A (zh)	2020-03-16	2021-03-03	基板處理裝置及基板處理方法

Country Status (4)

Country	Link
JP (1)	JP7437985B2 (ko)
KR (1)	KR102519769B1 (ko)
CN (1)	CN113410161A (ko)
TW (1)	TW202143302A (ko)

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* Cited by examiner, † Cited by third party
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US5173336A (en) *	1991-01-22	1992-12-22	Santa Barbara Research Center	Metal organic chemical vapor deposition (MOCVD) reactor with recirculation suppressing flow guide
JP3665672B2 (ja) *	1995-11-01	2005-06-29	東京エレクトロン株式会社	成膜装置及び成膜方法
US6257168B1 (en) *	1999-06-30	2001-07-10	Lam Research Corporation	Elevated stationary uniformity ring design
KR20020024620A (ko) *	2000-09-26	2002-04-01	윤종용	반도체 제조를 위한 식각 장치
JP4025030B2 (ja) *	2001-04-17	2007-12-19	東京エレクトロン株式会社	基板の処理装置及び搬送アーム
JP3724436B2 (ja)	2002-02-15	2005-12-07	セイコーエプソン株式会社	整流ウォール及びドライエッチング装置並びに該装置を用いた電気光学装置の製造方法
JP4439853B2 (ja)	2003-07-08	2010-03-24	東京エレクトロン株式会社	プラズマ処理装置、フォーカスリング及びプラズマ処理方法
CN100576438C (zh) *	2006-11-15	2009-12-30	应用材料股份有限公司	增强磁控制等离子体径向分布的约束挡板和流动均衡器
JP2009054720A (ja) *	2007-08-24	2009-03-12	Tokyo Electron Ltd	処理装置
JP5256866B2 (ja) *	2008-02-05	2013-08-07	東京エレクトロン株式会社	処理装置
JP5113016B2 (ja) *	2008-04-07	2013-01-09	東京エレクトロン株式会社	基板処理装置
JP5120089B2 (ja) *	2008-06-17	2013-01-16	東京エレクトロン株式会社	処理装置
JP5141520B2 (ja) *	2008-12-02	2013-02-13	東京エレクトロン株式会社	プラズマ処理装置
JP2013149635A (ja) *	2010-05-11	2013-08-01	Sharp Corp	ドライエッチング装置
JP2013149634A (ja)	2010-05-11	2013-08-01	Sharp Corp	ドライエッチング装置
JP2012222235A (ja)	2011-04-12	2012-11-12	Hitachi High-Technologies Corp	プラズマ処理装置
JP2013243184A (ja)	2012-05-18	2013-12-05	Sharp Corp	ドライエッチング装置
JP6305825B2 (ja) *	2014-05-12	2018-04-04	東京エレクトロン株式会社	プラズマ処理装置およびそれに用いる排気構造
JP6861570B2 (ja) *	2017-04-27	2021-04-21	東京エレクトロン株式会社	基板処理装置
CN109037019B (zh) *	2018-07-03	2020-04-28	深圳市华星光电半导体显示技术有限公司	干蚀刻设备
CN209708946U (zh) *	2018-12-07	2019-11-29	北京北方华创微电子装备有限公司	用于反应腔室的整流件及反应腔室

2020
- 2020-03-16 JP JP2020045381A patent/JP7437985B2/ja active Active
2021
- 2021-03-03 TW TW110107442A patent/TW202143302A/zh unknown
- 2021-03-04 KR KR1020210028941A patent/KR102519769B1/ko active IP Right Grant
- 2021-03-08 CN CN202110250009.8A patent/CN113410161A/zh active Pending

Also Published As

Publication number	Publication date
KR20210116259A (ko)	2021-09-27
CN113410161A (zh)	2021-09-17
JP7437985B2 (ja)	2024-02-26
KR102519769B1 (ko)	2023-04-10
JP2021150319A (ja)	2021-09-27

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