TW201610592A - 含有具封端異氰酸酯構造之聚合物的微影用阻劑下層膜形成組成物 - Google Patents
含有具封端異氰酸酯構造之聚合物的微影用阻劑下層膜形成組成物 Download PDFInfo
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- TW201610592A TW201610592A TW104116259A TW104116259A TW201610592A TW 201610592 A TW201610592 A TW 201610592A TW 104116259 A TW104116259 A TW 104116259A TW 104116259 A TW104116259 A TW 104116259A TW 201610592 A TW201610592 A TW 201610592A
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- 229920000642 polymer Polymers 0.000 title claims abstract description 103
- 239000000203 mixture Substances 0.000 title claims abstract description 94
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000001459 lithography Methods 0.000 title abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 238000012545 processing Methods 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical group NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 11
- 238000011161 development Methods 0.000 claims description 10
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 4
- 238000004132 cross linking Methods 0.000 claims description 4
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 42
- 125000005396 acrylic acid ester group Chemical group 0.000 abstract 1
- 239000012670 alkaline solution Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 194
- -1 2-methyl-cyclopropyl Chemical group 0.000 description 95
- 239000000243 solution Substances 0.000 description 87
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 51
- 230000015572 biosynthetic process Effects 0.000 description 47
- 238000003786 synthesis reaction Methods 0.000 description 45
- 239000010410 layer Substances 0.000 description 38
- 239000000126 substance Substances 0.000 description 33
- 229920005989 resin Polymers 0.000 description 32
- 239000011347 resin Substances 0.000 description 32
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 30
- 239000004094 surface-active agent Substances 0.000 description 24
- 125000004112 carboxyamino group Chemical group [H]OC(=O)N([H])[*] 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 22
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 22
- 238000001312 dry etching Methods 0.000 description 20
- 239000002253 acid Substances 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 17
- 239000004793 Polystyrene Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 16
- 229920002223 polystyrene Polymers 0.000 description 16
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 15
- 238000004458 analytical method Methods 0.000 description 15
- 239000003957 anion exchange resin Substances 0.000 description 15
- 239000003729 cation exchange resin Substances 0.000 description 15
- 229920001429 chelating resin Polymers 0.000 description 15
- 238000005342 ion exchange Methods 0.000 description 15
- 239000003456 ion exchange resin Substances 0.000 description 15
- 229920003303 ion-exchange polymer Polymers 0.000 description 15
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 15
- 239000002981 blocking agent Substances 0.000 description 14
- 239000003513 alkali Substances 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 10
- 239000002585 base Substances 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 9
- QHDRKFYEGYYIIK-UHFFFAOYSA-N isovaleronitrile Chemical compound CC(C)CC#N QHDRKFYEGYYIIK-UHFFFAOYSA-N 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 150000002148 esters Chemical class 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- XZSZONUJSGDIFI-UHFFFAOYSA-N n-(4-hydroxyphenyl)-2-methylprop-2-enamide Chemical compound CC(=C)C(=O)NC1=CC=C(O)C=C1 XZSZONUJSGDIFI-UHFFFAOYSA-N 0.000 description 7
- 150000004060 quinone imines Chemical class 0.000 description 7
- QTKPMCIBUROOGY-UHFFFAOYSA-N 2,2,2-trifluoroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)F QTKPMCIBUROOGY-UHFFFAOYSA-N 0.000 description 6
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical group COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 6
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- YOZHLACIXDCHPV-UHFFFAOYSA-N n-(methoxymethyl)-2-methylprop-2-enamide Chemical compound COCNC(=O)C(C)=C YOZHLACIXDCHPV-UHFFFAOYSA-N 0.000 description 5
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 5
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 4
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000012948 isocyanate Substances 0.000 description 4
- 150000002513 isocyanates Chemical class 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 125000004206 2,2,2-trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- QZPSOSOOLFHYRR-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate Chemical compound OCCCOC(=O)C=C QZPSOSOOLFHYRR-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- 229920001214 Polysorbate 60 Polymers 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 150000002391 heterocyclic compounds Chemical class 0.000 description 3
- 150000002466 imines Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 3
- 125000003367 polycyclic group Chemical group 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 2
- IHWDSEPNZDYMNF-UHFFFAOYSA-N 1H-indol-2-amine Chemical compound C1=CC=C2NC(N)=CC2=C1 IHWDSEPNZDYMNF-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
- XZIIFPSPUDAGJM-UHFFFAOYSA-N 6-chloro-2-n,2-n-diethylpyrimidine-2,4-diamine Chemical compound CCN(CC)C1=NC(N)=CC(Cl)=N1 XZIIFPSPUDAGJM-UHFFFAOYSA-N 0.000 description 2
- OQLZINXFSUDMHM-UHFFFAOYSA-N Acetamidine Chemical compound CC(N)=N OQLZINXFSUDMHM-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 2
- KCXZNSGUUQJJTR-UHFFFAOYSA-N Di-n-hexyl phthalate Chemical compound CCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCC KCXZNSGUUQJJTR-UHFFFAOYSA-N 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- FZERHIULMFGESH-UHFFFAOYSA-N N-phenylacetamide Chemical compound CC(=O)NC1=CC=CC=C1 FZERHIULMFGESH-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 2
- 239000004147 Sorbitan trioleate Substances 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 2
- 229960001231 choline Drugs 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- VEZUQRBDRNJBJY-UHFFFAOYSA-N cyclohexanone oxime Chemical compound ON=C1CCCCC1 VEZUQRBDRNJBJY-UHFFFAOYSA-N 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- MGWAVDBGNNKXQV-UHFFFAOYSA-N diisobutyl phthalate Chemical compound CC(C)COC(=O)C1=CC=CC=C1C(=O)OCC(C)C MGWAVDBGNNKXQV-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical class CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 229920001228 polyisocyanate Polymers 0.000 description 2
- 239000005056 polyisocyanate Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 239000006254 rheological additive Substances 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- 229940035044 sorbitan monolaurate Drugs 0.000 description 2
- 235000019337 sorbitan trioleate Nutrition 0.000 description 2
- 229960000391 sorbitan trioleate Drugs 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- OTGGHZUEAWMAAK-UHFFFAOYSA-N (1,1-dimethoxy-1-phenyldecan-2-yl)benzene Chemical compound C1(=CC=CC=C1)C(C(OC)(OC)C1=CC=CC=C1)CCCCCCCC OTGGHZUEAWMAAK-UHFFFAOYSA-N 0.000 description 1
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 description 1
- DLDWUFCUUXXYTB-UHFFFAOYSA-N (2-oxo-1,2-diphenylethyl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC(C=1C=CC=CC=1)C(=O)C1=CC=CC=C1 DLDWUFCUUXXYTB-UHFFFAOYSA-N 0.000 description 1
- FZENGILVLUJGJX-IHWYPQMZSA-N (Z)-acetaldehyde oxime Chemical compound C\C=N/O FZENGILVLUJGJX-IHWYPQMZSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- YBBLOADPFWKNGS-UHFFFAOYSA-N 1,1-dimethylurea Chemical compound CN(C)C(N)=O YBBLOADPFWKNGS-UHFFFAOYSA-N 0.000 description 1
- PSGQRAAEZLHVDT-UHFFFAOYSA-N 1,2,3-trimethylcyclopropane Chemical compound CC1C(C)C1C PSGQRAAEZLHVDT-UHFFFAOYSA-N 0.000 description 1
- OQPNDCHKFIHPBY-UHFFFAOYSA-N 1,2-dichloro-2-methylpropane Chemical compound CC(C)(Cl)CCl OQPNDCHKFIHPBY-UHFFFAOYSA-N 0.000 description 1
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- BMYPMWNIHPGGQM-UHFFFAOYSA-N 1,3-bis(10,10-dimethylundecyl)urea Chemical compound CC(CCCCCCCCCNC(=O)NCCCCCCCCCC(C)(C)C)(C)C BMYPMWNIHPGGQM-UHFFFAOYSA-N 0.000 description 1
- 229940051269 1,3-dichloro-2-propanol Drugs 0.000 description 1
- DEWLEGDTCGBNGU-UHFFFAOYSA-N 1,3-dichloropropan-2-ol Chemical compound ClCC(O)CCl DEWLEGDTCGBNGU-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- 229940057054 1,3-dimethylurea Drugs 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- FUWDFGKRNIDKAE-UHFFFAOYSA-N 1-butoxypropan-2-yl acetate Chemical compound CCCCOCC(C)OC(C)=O FUWDFGKRNIDKAE-UHFFFAOYSA-N 0.000 description 1
- SMLNDVNTPWRZJH-UHFFFAOYSA-N 1-chloro-4-(trimethoxymethyl)dodecane Chemical compound ClCCCC(C(OC)(OC)OC)CCCCCCCC SMLNDVNTPWRZJH-UHFFFAOYSA-N 0.000 description 1
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical class CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- 125000006433 1-ethyl cyclopropyl group Chemical group [H]C([H])([H])C([H])([H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000006438 1-i-propyl cyclopropyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- IQAXWEPTIVVMJZ-UHFFFAOYSA-N 1-methoxy-4-(2,2,2-trichloroethyl)benzene Chemical compound COC1=CC=C(CC(Cl)(Cl)Cl)C=C1 IQAXWEPTIVVMJZ-UHFFFAOYSA-N 0.000 description 1
- 125000006432 1-methyl cyclopropyl group Chemical group [H]C([H])([H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- VBICKXHEKHSIBG-UHFFFAOYSA-N 1-monostearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 description 1
- 125000006439 1-n-propyl cyclopropyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- YNICHAOCDICNOT-UHFFFAOYSA-N 2,2-dimethoxyundecane Chemical compound CCCCCCCCCC(C)(OC)OC YNICHAOCDICNOT-UHFFFAOYSA-N 0.000 description 1
- TWWSEEHCVDRRRI-UHFFFAOYSA-N 2,3-Butanedithiol Chemical compound CC(S)C(C)S TWWSEEHCVDRRRI-UHFFFAOYSA-N 0.000 description 1
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 1
- WXHLLJAMBQLULT-UHFFFAOYSA-N 2-[[6-[4-(2-hydroxyethyl)piperazin-1-yl]-2-methylpyrimidin-4-yl]amino]-n-(2-methyl-6-sulfanylphenyl)-1,3-thiazole-5-carboxamide;hydrate Chemical compound O.C=1C(N2CCN(CCO)CC2)=NC(C)=NC=1NC(S1)=NC=C1C(=O)NC1=C(C)C=CC=C1S WXHLLJAMBQLULT-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ISPYQTSUDJAMAB-UHFFFAOYSA-N 2-chlorophenol Chemical compound OC1=CC=CC=C1Cl ISPYQTSUDJAMAB-UHFFFAOYSA-N 0.000 description 1
- LYNVLWLRSACENL-UHFFFAOYSA-N 2-decyl-1h-imidazole Chemical compound CCCCCCCCCCC1=NC=CN1 LYNVLWLRSACENL-UHFFFAOYSA-N 0.000 description 1
- RWCABPJBWOSCPN-UHFFFAOYSA-N 2-hydroxy-1,2-diphenylethanone;phenylmethanesulfonic acid Chemical compound OS(=O)(=O)CC1=CC=CC=C1.C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 RWCABPJBWOSCPN-UHFFFAOYSA-N 0.000 description 1
- GPLIMIJPIZGPIF-UHFFFAOYSA-N 2-hydroxy-1,4-benzoquinone Chemical compound OC1=CC(=O)C=CC1=O GPLIMIJPIZGPIF-UHFFFAOYSA-N 0.000 description 1
- FLFWJIBUZQARMD-UHFFFAOYSA-N 2-mercapto-1,3-benzoxazole Chemical compound C1=CC=C2OC(S)=NC2=C1 FLFWJIBUZQARMD-UHFFFAOYSA-N 0.000 description 1
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- IQUPABOKLQSFBK-UHFFFAOYSA-N 2-nitrophenol Chemical compound OC1=CC=CC=C1[N+]([O-])=O IQUPABOKLQSFBK-UHFFFAOYSA-N 0.000 description 1
- HAZQZUFYRLFOLC-UHFFFAOYSA-N 2-phenyl-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC(C(Cl)(Cl)Cl)=NC(C=2C=CC=CC=2)=N1 HAZQZUFYRLFOLC-UHFFFAOYSA-N 0.000 description 1
- BCPQALWAROJVLE-UHFFFAOYSA-N 4-(2,4-dinitroanilino)phenol Chemical compound C1=CC(O)=CC=C1NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O BCPQALWAROJVLE-UHFFFAOYSA-N 0.000 description 1
- SXPGQGNWEWPWQZ-UHFFFAOYSA-N 4-(triethoxymethyl)dodecan-1-amine Chemical compound NCCCC(C(OCC)(OCC)OCC)CCCCCCCC SXPGQGNWEWPWQZ-UHFFFAOYSA-N 0.000 description 1
- QHPQWRBYOIRBIT-UHFFFAOYSA-N 4-tert-butylphenol Chemical compound CC(C)(C)C1=CC=C(O)C=C1 QHPQWRBYOIRBIT-UHFFFAOYSA-N 0.000 description 1
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 description 1
- NWSGBTCJMJADLE-UHFFFAOYSA-N 6-o-decyl 1-o-octyl hexanedioate Chemical compound CCCCCCCCCCOC(=O)CCCCC(=O)OCCCCCCCC NWSGBTCJMJADLE-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- LFASJUGJSOVZKD-UHFFFAOYSA-N C(C)(=O)OCC.C(C)(=N)N Chemical compound C(C)(=O)OCC.C(C)(=N)N LFASJUGJSOVZKD-UHFFFAOYSA-N 0.000 description 1
- WMAZOIVUIWQRKU-UHFFFAOYSA-N C1(=CC=CC=C1)C(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound C1(=CC=CC=C1)C(C(OCC)(OCC)OCC)CCCCCCCC WMAZOIVUIWQRKU-UHFFFAOYSA-N 0.000 description 1
- IOGOPQACKPVLRU-UHFFFAOYSA-N CC(=CC(CCCCCCCCC)Cl)C Chemical compound CC(=CC(CCCCCCCCC)Cl)C IOGOPQACKPVLRU-UHFFFAOYSA-N 0.000 description 1
- YVBUPSWXMPKPAW-UHFFFAOYSA-N CC(C(C=C)(OCC)C)CCCCCCCC Chemical compound CC(C(C=C)(OCC)C)CCCCCCCC YVBUPSWXMPKPAW-UHFFFAOYSA-N 0.000 description 1
- BWAQECKOACRLLA-UHFFFAOYSA-N CC(C(Cl)(C1=CC=CC=C1)C1=CC=CC=C1)CCCCCCCC Chemical compound CC(C(Cl)(C1=CC=CC=C1)C1=CC=CC=C1)CCCCCCCC BWAQECKOACRLLA-UHFFFAOYSA-N 0.000 description 1
- LNEJJQMNHUGXDW-UHFFFAOYSA-N CC(C(OCC)(OCC)C)CCCCCCCC Chemical compound CC(C(OCC)(OCC)C)CCCCCCCC LNEJJQMNHUGXDW-UHFFFAOYSA-N 0.000 description 1
- HVDGUXXKDZEHEI-UHFFFAOYSA-N CC(CCCCCCCCCC=1NC=CN1)(C)C Chemical compound CC(CCCCCCCCCC=1NC=CN1)(C)C HVDGUXXKDZEHEI-UHFFFAOYSA-N 0.000 description 1
- ZQBSPSZMRYBLLZ-UHFFFAOYSA-N CC(CCCCCCCCCCl)(C)C Chemical compound CC(CCCCCCCCCCl)(C)C ZQBSPSZMRYBLLZ-UHFFFAOYSA-N 0.000 description 1
- COQYUAJAXLUAHF-UHFFFAOYSA-N CC(CCCCCCCCCOC)(C)C Chemical compound CC(CCCCCCCCCOC)(C)C COQYUAJAXLUAHF-UHFFFAOYSA-N 0.000 description 1
- GXWRMYYMIHSRLG-UHFFFAOYSA-N CCSCC.NN Chemical compound CCSCC.NN GXWRMYYMIHSRLG-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- 235000005979 Citrus limon Nutrition 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- AHJKRLASYNVKDZ-UHFFFAOYSA-N DDD Chemical compound C=1C=C(Cl)C=CC=1C(C(Cl)Cl)C1=CC=C(Cl)C=C1 AHJKRLASYNVKDZ-UHFFFAOYSA-N 0.000 description 1
- YVGGHNCTFXOJCH-UHFFFAOYSA-N DDT Chemical compound C1=CC(Cl)=CC=C1C(C(Cl)(Cl)Cl)C1=CC=C(Cl)C=C1 YVGGHNCTFXOJCH-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 description 1
- PGIBJVOPLXHHGS-UHFFFAOYSA-N Di-n-decyl phthalate Chemical compound CCCCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCCCC PGIBJVOPLXHHGS-UHFFFAOYSA-N 0.000 description 1
- XTJFFFGAUHQWII-UHFFFAOYSA-N Dibutyl adipate Chemical compound CCCCOC(=O)CCCCC(=O)OCCCC XTJFFFGAUHQWII-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- RDOFJDLLWVCMRU-UHFFFAOYSA-N Diisobutyl adipate Chemical compound CC(C)COC(=O)CCCCC(=O)OCC(C)C RDOFJDLLWVCMRU-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- FBOZXECLQNJBKD-ZDUSSCGKSA-N L-methotrexate Chemical compound C=1N=C2N=C(N)N=C(N)C2=NC=1CN(C)C1=CC=C(C(=O)N[C@@H](CCC(O)=O)C(O)=O)C=C1 FBOZXECLQNJBKD-ZDUSSCGKSA-N 0.000 description 1
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 1
- MGJKQDOBUOMPEZ-UHFFFAOYSA-N N,N'-dimethylurea Chemical compound CNC(=O)NC MGJKQDOBUOMPEZ-UHFFFAOYSA-N 0.000 description 1
- HIGKQJXHJZHSKD-UHFFFAOYSA-N N,N,10,10-tetramethylundecan-1-amine Chemical compound CN(CCCCCCCCCC(C)(C)C)C HIGKQJXHJZHSKD-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 229920002675 Polyoxyl Polymers 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- ALVGSDOIXRPZFH-UHFFFAOYSA-N [(1-diazonioimino-3,4-dioxonaphthalen-2-ylidene)hydrazinylidene]azanide Chemical compound C1=CC=C2C(=N[N+]#N)C(=NN=[N-])C(=O)C(=O)C2=C1 ALVGSDOIXRPZFH-UHFFFAOYSA-N 0.000 description 1
- IJCWFDPJFXGQBN-RYNSOKOISA-N [(2R)-2-[(2R,3R,4S)-4-hydroxy-3-octadecanoyloxyoxolan-2-yl]-2-octadecanoyloxyethyl] octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCCCCCCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCCCCCCCCCCCC IJCWFDPJFXGQBN-RYNSOKOISA-N 0.000 description 1
- STOLYTNTPGXYRW-UHFFFAOYSA-N [nitro(phenyl)methyl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC([N+]([O-])=O)C1=CC=CC=C1 STOLYTNTPGXYRW-UHFFFAOYSA-N 0.000 description 1
- 229960001413 acetanilide Drugs 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- RVODZEVKSDJNEL-UHFFFAOYSA-N acetic acid;ethyl hydrogen sulfate Chemical compound CC(O)=O.CCOS(O)(=O)=O RVODZEVKSDJNEL-UHFFFAOYSA-N 0.000 description 1
- PXAJQJMDEXJWFB-UHFFFAOYSA-N acetone oxime Chemical compound CC(C)=NO PXAJQJMDEXJWFB-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001278 adipic acid derivatives Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 description 1
- 150000008052 alkyl sulfonates Chemical class 0.000 description 1
- UMGDCJDMYOKAJW-UHFFFAOYSA-N aminothiocarboxamide Natural products NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- ZWIPGARCRSFMHK-UHFFFAOYSA-N benzene;1h-imidazole Chemical compound C1=CNC=N1.C1=CC=CC=C1 ZWIPGARCRSFMHK-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- 239000004305 biphenyl Chemical group 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- LTCZRDFBRQJZFN-UHFFFAOYSA-N bis(4-tert-butylphenyl)phosphanium trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C(C)(C)(C)C1=CC=C(C=C1)[PH2+]C1=CC=C(C=C1)C(C)(C)C LTCZRDFBRQJZFN-UHFFFAOYSA-N 0.000 description 1
- CJFLBOQMPJCWLR-UHFFFAOYSA-N bis(6-methylheptyl) hexanedioate Chemical compound CC(C)CCCCCOC(=O)CCCCC(=O)OCCCCCC(C)C CJFLBOQMPJCWLR-UHFFFAOYSA-N 0.000 description 1
- NRFGDNQTKLWDIH-UPHRSURJSA-N bis(sulfanyl) (z)-but-2-enedioate Chemical compound SOC(=O)\C=C/C(=O)OS NRFGDNQTKLWDIH-UPHRSURJSA-N 0.000 description 1
- 150000001621 bismuth Chemical class 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- WQAQPCDUOCURKW-UHFFFAOYSA-N butanethiol Chemical compound CCCCS WQAQPCDUOCURKW-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ULBTUVJTXULMLP-UHFFFAOYSA-N butyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCCC ULBTUVJTXULMLP-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- ALLOLPOYFRLCCX-UHFFFAOYSA-N chembl1986529 Chemical compound COC1=CC=CC=C1N=NC1=C(O)C=CC2=CC=CC=C12 ALLOLPOYFRLCCX-UHFFFAOYSA-N 0.000 description 1
- 229960001701 chloroform Drugs 0.000 description 1
- XENVCRGQTABGKY-ZHACJKMWSA-N chlorohydrin Chemical compound CC#CC#CC#CC#C\C=C\C(Cl)CO XENVCRGQTABGKY-ZHACJKMWSA-N 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate group Chemical group [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- ATOFMGTVIWEKRT-UHFFFAOYSA-N cyclohexane;hydrazine Chemical compound NN.C1CCCCC1 ATOFMGTVIWEKRT-UHFFFAOYSA-N 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- JBSLOWBPDRZSMB-FPLPWBNLSA-N dibutyl (z)-but-2-enedioate Chemical compound CCCCOC(=O)\C=C/C(=O)OCCCC JBSLOWBPDRZSMB-FPLPWBNLSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 229940031769 diisobutyl adipate Drugs 0.000 description 1
- BEPAFCGSDWSTEL-UHFFFAOYSA-N dimethyl malonate Chemical compound COC(=O)CC(=O)OC BEPAFCGSDWSTEL-UHFFFAOYSA-N 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical class C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000007922 dissolution test Methods 0.000 description 1
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 1
- QYDYPVFESGNLHU-UHFFFAOYSA-N elaidic acid methyl ester Natural products CCCCCCCCC=CCCCCCCCC(=O)OC QYDYPVFESGNLHU-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 1
- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940075529 glyceryl stearate Drugs 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- SNWZOWCCZGQOGX-UHFFFAOYSA-N hexan-1-imine Chemical compound CCCCCC=N SNWZOWCCZGQOGX-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000011254 layer-forming composition Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000002688 maleic acid derivatives Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229960000485 methotrexate Drugs 0.000 description 1
- YSGBMDFJWFIEDF-UHFFFAOYSA-N methyl 2-hydroxy-3-methylbutanoate Chemical compound COC(=O)C(O)C(C)C YSGBMDFJWFIEDF-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- QYDYPVFESGNLHU-KHPPLWFESA-N methyl oleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC QYDYPVFESGNLHU-KHPPLWFESA-N 0.000 description 1
- 229940073769 methyl oleate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- ZKALVNREMFLWAN-UHFFFAOYSA-N n-(4-methylpentan-2-ylidene)hydroxylamine Chemical compound CC(C)CC(C)=NO ZKALVNREMFLWAN-UHFFFAOYSA-N 0.000 description 1
- DNYZBFWKVMKMRM-UHFFFAOYSA-N n-benzhydrylidenehydroxylamine Chemical compound C=1C=CC=CC=1C(=NO)C1=CC=CC=C1 DNYZBFWKVMKMRM-UHFFFAOYSA-N 0.000 description 1
- WHIVNJATOVLWBW-UHFFFAOYSA-N n-butan-2-ylidenehydroxylamine Chemical compound CCC(C)=NO WHIVNJATOVLWBW-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- MLQPXAQSJNFRRZ-UHFFFAOYSA-N n-decyldodecan-1-amine Chemical compound CCCCCCCCCCCCNCCCCCCCCCC MLQPXAQSJNFRRZ-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- NGTGENGUUCHSLQ-UHFFFAOYSA-N n-heptan-2-ylidenehydroxylamine Chemical compound CCCCCC(C)=NO NGTGENGUUCHSLQ-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- HQVFKSDWNYVAQD-UHFFFAOYSA-N n-hydroxyprop-2-enamide Chemical group ONC(=O)C=C HQVFKSDWNYVAQD-UHFFFAOYSA-N 0.000 description 1
- SXEQNYJKZGIDTG-UHFFFAOYSA-N n-methoxy-2-methylprop-2-enamide Chemical compound CONC(=O)C(C)=C SXEQNYJKZGIDTG-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- DCUJJWWUNKIJPH-UHFFFAOYSA-N nitrapyrin Chemical compound ClC1=CC=CC(C(Cl)(Cl)Cl)=N1 DCUJJWWUNKIJPH-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229940049964 oleate Drugs 0.000 description 1
- 150000002888 oleic acid derivatives Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 150000003021 phthalic acid derivatives Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- XDAGXZXKTKRFMT-UHFFFAOYSA-N propan-2-imine Chemical compound CC(C)=N XDAGXZXKTKRFMT-UHFFFAOYSA-N 0.000 description 1
- 125000006239 protecting group Chemical group 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- ZDYVRSLAEXCVBX-UHFFFAOYSA-N pyridinium p-toluenesulfonate Chemical compound C1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 ZDYVRSLAEXCVBX-UHFFFAOYSA-N 0.000 description 1
- HBCQSNAFLVXVAY-UHFFFAOYSA-N pyrimidine-2-thiol Chemical compound SC1=NC=CC=N1 HBCQSNAFLVXVAY-UHFFFAOYSA-N 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 239000001589 sorbitan tristearate Substances 0.000 description 1
- 235000011078 sorbitan tristearate Nutrition 0.000 description 1
- 229960004129 sorbitan tristearate Drugs 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- ZEMGGZBWXRYJHK-UHFFFAOYSA-N thiouracil Chemical compound O=C1C=CNC(=S)N1 ZEMGGZBWXRYJHK-UHFFFAOYSA-N 0.000 description 1
- 229950000329 thiouracil Drugs 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical class C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
- C08F20/36—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate containing oxygen in addition to the carboxy oxygen, e.g. 2-N-morpholinoethyl (meth)acrylate or 2-isocyanatoethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/52—Amides or imides
- C08F20/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
- C08F20/58—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide containing oxygen in addition to the carbonamido oxygen, e.g. N-methylolacrylamide, N-acryloylmorpholine
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/24—Homopolymers or copolymers of amides or imides
- C09D133/26—Homopolymers or copolymers of acrylamide or methacrylamide
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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Abstract
本發明之課題在於提供一種在來自上層之圖型轉印或基板加工時可進行乾式蝕刻,且基板加工後可以鹼水溶液除去而可形成阻劑下層膜用之阻劑下層膜形成組成物。
本發明之解決方法係一種微影用阻劑下層膜形成組成物,其係包含具有丙烯醯胺構造或丙烯酸酯構造之聚合物(A)、具封端異氰酸酯構造之聚合物(B)、溶劑(C),其中,聚合物(A)係含式(1):
□
之單位構造的聚合物,聚合物(B)係含式(2):
□
之單位構造的聚合物。
本發明係一種半導體裝置之製造方法,其係包含形成阻劑圖型之步驟、藉由阻劑圖型蝕刻無機硬遮罩層之步驟、藉由經圖型化之無機硬遮罩層蝕刻阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
Description
本發明乃是關於半導體基板加工時有效的微影用阻劑下層膜形成組成物,與使用該阻劑下層膜形成組成物之阻劑圖型形成法,及半導體裝置之製造方法。
過去以來在半導體裝置之製造中,即已施行有藉由使用光阻劑組成物之微影所為之微細加工。前述微細加工乃是一種在矽晶圓等之被加工基板上形成光阻劑組成物之薄膜,於其上乃透過經描繪有半導體裝置之圖型的遮罩圖型,照射紫外線等之活性光線並顯像,將所得之光阻劑圖型作為保護膜來蝕刻處理矽晶圓等之被加工基板之加工法。然而,近年來,半導體裝置的高積體度化不斷地進展,所使用之活性光線也有自KrF準分子雷射(248nm)朝向ArF準分子雷射(193nm)之短波長化的傾向。伴隨於此,來自活性光線基板的散射或駐波的影響大有問題。
因此,有關於在光阻劑與被加工基板之間設置抗反射膜(BottomAnti-Reflective Coating、BARC)之方法被廣泛地檢討至今。例如,已揭示含有具丙烯醯胺構造之聚合物的感光性阻劑下層膜形成用組成物(參考專利文獻1)。
已揭示含有具羥基丙烯醯胺單位構造之聚合物的阻劑下層膜形成用組成物(參考專利文獻2)。
已揭示包含具羥基伸烷基甲基丙烯醯胺之單位構造與芳香族伸烷基甲基丙烯酸酯之單位構造之聚合物的抗反射膜形成用組成物(專利文獻3參照)。
今後,阻劑圖型的微細化若繼續進展,會發生解像度的問題或阻劑圖型於顯像後倒塌之問題,於是要求阻劑之薄膜化。因此,在基板加工上難以獲得充分的阻劑圖型膜厚,而不只是阻劑圖型,對於在阻劑與欲加工的半導體基板之間所作成的阻劑下層膜,也必須要有作為基板加工時之遮罩機能的製程。如此的製程用之阻劑下層膜方面,與以往高蝕刻率性(蝕刻速度快者)阻劑下層膜不同,乃被要求要具有接近阻劑之乾式蝕刻速度選擇比的微影用阻劑下層膜、具有較阻劑小之乾式蝕刻速度選擇比的微影用阻劑下層膜或者是具有較半導體基板小之乾式蝕刻速度選擇比的微影用阻劑下層膜。
已揭示一種具有丙烯醯胺構造且可以鹼水溶液去除的有機硬遮罩層形成用組成物(參考專利文獻4)。
已揭示一種使用具封端異氰酸酯基之聚合物的半導體
裝置之製造方法(參考專利文獻5)。
[專利文獻1]國際申請號WO2005/111724
[專利文獻2]日本特開2009-025670
[專利文獻3]日本特開2001-027810
[專利文獻4]國際申請號WO2012/161126
[專利文獻5]際申請號WO2014/007079
本發明之目的在於提供一種用於半導體裝置製造之微影製程的阻劑下層膜形成組成物。又本發明之目的在於提供一種不與無機硬遮罩層發生層混合、可得優異的阻劑圖型、具有接近阻劑之乾式蝕刻速度選擇比的微影用阻劑下層膜、具有較阻劑小之乾式蝕刻速度選擇比的微影用阻劑下層膜,或者具有較半導體基板小之乾式蝕刻速度選擇比的微影用阻劑下層膜。又,本發明之目的在於將248nm、193nm、157nm等波長之照射光使用於微細加工時,賦予阻劑下層膜有效地吸收來自基板的反射光之性能。再者,本發明之目的在於提供一種使用阻劑下層膜形成組成物之阻劑圖型的形成方法。然後,在於提供一種可自上層圖型轉印或於基板之加工時進行乾式蝕刻,基板加
工後可以鹼水溶液去除之用以形成阻劑下層膜的阻劑下層膜形成組成物。
本發明之第1觀點係一種微影用阻劑下層膜形成組成物,其係包含具有丙烯醯胺構造或丙烯酸酯構造之聚合物(A)、具封端異氰酸酯構造之聚合物(B)與溶劑(C)、第2觀點係如第1觀點之阻劑下層膜形成組成物,其中,上述聚合物(A)係含以式(1)所示之單位構造的聚合物:
(式(1)中,R1表示氫原子或甲基、X1表示NH基或氧原子、R2表示芳香族環、R3表示羥基或羧基)、第3觀點係如第2觀點之阻劑下層膜形成組成物,其中,式(1)中,R2為苯環、第4觀點係如第1觀點~第3觀點之任一記載的阻劑下層
膜形成組成物,其中,上述聚合物(B)係含以式(2)所示之單位構造的聚合物:
(式(2)中,R4表示氫原子或甲基、R5表示單鍵或伸烷基、R6表示封端異氰酸酯基)、第5觀點係如第1觀點~第4觀點之任一記載的阻劑下層膜形成組成物,其中,聚合物(A)與聚合物(B)係使羥基或羧基與封端異氰酸酯基以莫耳比1:0.005~1.0之比例所含者、第6觀點係如第1觀點~第5觀點之任一記載的阻劑下層膜形成組成物,其中,進一步含交聯觸媒、第7觀點係一種半導體裝置之製造方法,其係包含:於半導體基板上由第1觀點~第6觀點之任一記載的阻劑下層膜形成組成物形成阻劑下層膜之步驟、於該阻劑下層膜上形成阻劑膜之步驟、藉由光或電子線之照射與顯像而於阻劑膜上形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半
導體基板之步驟、及第8觀點係一種半導體裝置之製造方法,其係包含:於半導體基板上由第1觀點~第6觀點之任一記載的阻劑下層膜形成組成物形成阻劑下層膜之步驟、於該阻劑下層膜上形成無機硬遮罩層之步驟、進一步於無機硬遮罩層上形成阻劑膜之步驟、藉由光或電子線之照射與顯像而於阻劑膜上形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻無機硬遮罩層之步驟、藉由經圖型化之無機硬遮罩層蝕刻阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
由本發明之阻劑下層膜形成組成物所形成之阻劑下層膜,不會與位於其上層之無機硬遮罩層發生層混合,且可形成良好的阻劑之圖型形狀。
又,藉由本發明之阻劑下層膜形成組成物,係可提供具有與阻劑接近的乾式蝕刻速度之選擇比、較阻劑小的乾式蝕刻速度之選擇比或是較半導體基板小的乾式蝕刻速度之選擇比的優異的阻劑下層膜。
因此,由本發明之阻劑下層膜形成組成物所得之阻劑下層膜,係可將被轉印於上層之無機硬遮罩層的阻劑圖型以乾式蝕刻轉印於阻劑下層膜。再者,被轉印於阻劑下層膜之阻劑圖型係可藉由乾式蝕刻來進行半導體基板的加工。
甚至,本發明之阻劑下層膜形成組成物,係可藉此賦予所形成之阻劑下層膜有效地抑制來自基板的反射之性能,該阻劑下層膜可同時具有作為曝光光之抗反射膜的效果。
所以,由本發明之微影用阻劑下層膜形成組成物所形成之阻劑下層膜,係可用作為平坦化膜、阻劑層之防污染膜、具有乾式蝕刻選擇性之膜。藉此,可使半導體製造的微影製程中之阻劑圖型形成得以容易地、精度佳地實施。
又,本發明之微影用阻劑下層膜形成組成物,因熱安定性高,由此所形成之阻劑下層膜,可防止起因於用以形成無機硬遮罩層之真空蒸鍍時或燒成時的分解物導致的對上層膜之污染,又,對燒成步驟的溫度裕度具有餘裕。
再者,由本發明之微影用阻劑下層膜形成組成物所形成之阻劑下層膜,在加工半導體基板之後,可藉由鹼水溶液去除。
本發明係包含具有丙烯醯胺構造或丙烯酸酯構造之聚合物(A)、具封端異氰酸酯構造之聚合物(B)與溶劑(C)之微影用阻劑下層膜形成組成物。
本發明之阻劑下層膜形成組成物可因應需要而含有酸產生劑、界面活性劑等之添加劑。此組成物之固形分為0.1~70質量%或0.1~60質量%。固形分係從阻劑下層膜
形成組成物去除溶劑(C)所殘存的成分之含有比例。
固形分中,係可使上述聚合物(A)及聚合物(B)之合計量以1~100質量%、或1~99質量%、或50~98質量%之比例含有。
上述聚合物(A)之重量平均分子量,例如可為1000~1000000、或1000~100000、或1000~50000之範圍。
聚合物(A)較佳為含有式(1)所示之單位構造,式(1)中,R1表示氫原子或甲基、X1表示NH基或氧原子、R2表示芳香族環、R3表示羥基或羧基。
聚合物(B)較佳為含有式(2)所示之單位構造,式(2)中,R4表示氫原子或甲基、R5表示單鍵或伸烷基、R6表示封端異氰酸酯基。
上述聚合物(B)之重量平均分子量,例如可為1000~1000000、或1000~100000、或1000~50000之範圍。
本發明中,聚合物(A)與聚合物(B)係可以羥基或羧基與封端異氰酸酯基之莫耳比成為1:0.005~1.0之比例含有。
前述芳香族環方面,可舉出苯環、萘環、蒽環、聯苯環等,尤以苯環為佳。
前述伸烷基方面,可舉出對應於以下烷基之伸烷基,烷基方面,可例示碳數1~10之烷基。可舉例如甲基、乙基、n-丙基、i-丙基、環丙基、n-丁基、i-丁基、s-丁基、t-丁基、環丁基、1-甲基-環丙基、2-甲基-環丙基、n-戊基、1-甲基-n-丁基、2-甲基-n-丁基、3-甲基-n-
丁基、1,1-二甲基-n-丙基、1,2-二甲基-n-丙基、2,2-二甲基-n-丙基、1-乙基-n-丙基、環戊基、1-甲基-環丁基、2-甲基-環丁基、3-甲基-環丁基、1,2-二甲基-環丙基、2,3-二甲基-環丙基、1-乙基-環丙基、2-乙基-環丙基、n-己基、1-甲基-n-戊基、2-甲基-n-戊基、3-甲基-n-戊基、4-甲基-n-戊基、1,1-二甲基-n-丁基、1,2-二甲基-n-丁基、1,3-二甲基-n-丁基、2,2-二甲基-n-丁基、2,3-二甲基-n-丁基、3,3-二甲基-n-丁基、1-乙基-n-丁基、2-乙基-n-丁基、1,1,2-三甲基-n-丙基、1,2,2-三甲基-n-丙基、1-乙基-1-甲基-n-丙基、1-乙基-2-甲基-n-丙基、環己基、1-甲基-環戊基、2-甲基-環戊基、3-甲基-環戊基、1-乙基-環丁基、2-乙基-環丁基、3-乙基-環丁基、1,2-二甲基-環丁基、1,3-二甲基-環丁基、2,2-二甲基-環丁基、2,3-二甲基-環丁基、2,4-二甲基-環丁基、3,3-二甲基-環丁基、1-n-丙基-環丙基、2-n-丙基-環丙基、1-i-丙基-環丙基、2-i-丙基-環丙基、1,2,2-三甲基-環丙基、1,2,3-三甲基-環丙基、2,2,3-三甲基-環丙基、1-乙基-2-甲基-環丙基、2-乙基-1-甲基-環丙基、2-乙基-2-甲基-環丙基及2-乙基-3-甲基-環丙基等。
前述所謂封端異氰酸酯基,係異氰酸酯基(-N=C=O)藉由適當的保護基所封端之有機基。
封端異氰酸酯基係可使異氰酸酯基與封端化劑反應而形成封端異氰酸酯基。
聚合物(A)中的羥基或羧基反應時,封端化
劑會脫離,羥基或羧基與異氰酸酯基會反應形成交聯構造。
封端化劑方面,係可與異氰酸酯反應之含活性氫的化合物,可舉例如醇、苯酚、多環苯酚、醯胺、醯亞胺、亞胺、硫醇、肟、內醯胺、含活性氫之雜環、含活性亞甲基之化合物。
作為封端化劑的醇,可舉例如碳數1~40之醇,可例示出甲醇、乙醇、丙醇、異丙醇、丁醇、戊醇、己醇、辛醇、氯乙醇、1,3-二氯-2-丙醇、t-丁醇、t-戊醇、2-乙基己醇、環己醇、月桂基醇、乙二醇、丁二醇、三羥甲基丙烷、丙三醇、乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單丁基醚、二乙二醇單甲基醚、丙二醇單甲基醚、丙二醇單乙基醚、苯甲醇等。
作為封端化劑的苯酚,可舉例如碳數6~20之苯酚類,可例示出苯酚、氯苯酚、硝基苯酚等。
作為封端化劑的苯酚衍生物,可舉例如碳數6~20之苯酚衍生物,對-t-丁基苯酚、甲酚、二甲苯酚、間苯二酚等。
作為封端化劑的多環苯酚,可舉例如碳數10~20之多環苯酚,該等是具有苯酚性羥基之芳香族縮合環,可例示出羥基萘、羥基蒽等。
作為封端化劑的醯胺,可舉例如碳數1~20之醯胺,可例示出乙醯苯胺、己烷醯胺、辛烷二醯胺、丁二醯胺、苯碸醯胺、乙烷二醯胺等。
作為封端化劑的醯亞胺,可舉例如碳數6~20之醯亞胺,可例示出環己烷二羧基醯亞胺、環六烯二羧基醯亞胺、苯二羧基醯亞胺、環丁烷二羧基醯亞胺、碳二醯亞胺等。
作為封端化劑的亞胺,可舉例如碳數1~20之亞胺,可例示出己烷-1-亞胺、2-丙烷亞胺、乙烷-1,2-亞胺等。
作為封端化劑的硫醇,可舉例如碳數1~20之硫醇,可例示出乙烷硫醇、丁烷硫醇、硫苯酚、2,3-丁烷二硫醇等。
作為封端化劑的肟,例如碳數1~20之肟,可例示出乙醯肟、甲基乙基酮肟、環己酮肟、二甲基酮肟、甲基異丁基酮肟、甲基戊基酮肟、甲醯胺肟、乙醛肟、二乙醯基單肟、二苯甲酮肟、環己烷肟等。
作為封端化劑的內醯胺,例如碳數4~20之內醯胺,可例示出ε-己內醯胺、δ-戊內醯胺、γ-丁內醯胺、β-丙基內醯胺、γ-吡咯啶酮、月桂基內醯胺等。
作為封端化劑的含活性氫之雜環化合物,例如碳數3~30之含活性氫之雜環化合物,可例示出吡咯、咪唑、吡唑、哌啶、哌嗪、嗎啉、吡啶、吲哚、吲唑、嘌呤、咔唑等。
作為封端化劑的含活性亞甲基之化合物,例如碳數3~20之含活性亞甲基之化合物,可例示出丙二酸二甲基酯、丙二酸二乙基酯、乙醯乙酸甲基酯、乙醯乙酸
乙基酯、乙醯基丙酮等。
本發明中所用的聚合物(A),其構造可例示於下。
本發明中所用的聚合物(B),其構造可例示於下。
本發明中,用以促進上述交聯反應之觸媒方面,可摻合p-甲苯磺酸、三氟甲烷磺酸、吡啶鎓p-甲苯磺酸、水楊酸、磺基水楊酸、檸檬酸、安息香酸、羥基安息香酸、萘羧酸等之酸性化合物或/及2,4,4,6-四溴環己二酮、安息香甲苯磺酸酯、2-硝基苄基甲苯磺酸酯、其他有機磺酸烷基酯等之熱酸產生劑。摻合量相對於全固形分為0.0001~20質量%、較佳為0.0005~10質量%、較佳為0.01~3質量%。
本發明之阻劑下層膜形成組成物,為了在微影步驟使其與被覆於上層的光阻劑之酸性度一致,係可添加光酸產生劑。較佳的光酸產生劑方面,可舉例如雙(4-t-丁基苯基)錪三氟甲烷磺酸鹽、三苯基鋶三氟甲烷磺酸鹽等之鎓鹽系光酸產生劑類、苯基-雙(三氯甲基)-s-三嗪等之鹵素含有化合物系光酸產生劑類、安息香甲苯磺酸
酯、N-羥基丁二醯亞胺三氟甲烷磺酸鹽等之磺酸系光酸產生劑類等。相對於全固形分,上述光酸產生劑為0.2~10質量%、較佳為0.4~5質量%。
本發明之微影用阻劑下層膜形成組成物中,除了上述以外,可視需要而添加額外的吸光劑、流變性調整劑、接著補助劑、界面活性劑等。
額外的吸光劑方面,可舉例如「工業用色素的技術與市場」(CMC出版)或「染料便覧」(有機合成化學協會編)中記載的市售之吸光劑,例如得以適用C.I.DisperseYellow1,3,4,5,7,8,13,23,31,49,50,51,54,60,64,66,68,79,82,88,90,93,102,114及124;C.I.DisperseOrange1,5,13,25,29,30,31,44,57,72及73;C.I.DisperseRed1,5,7,13,17,19,43,50,54,58,65,72,73,88,117,137,143,199及210;C.I.DisperseViolet43;C.I.DisperseBlue96;C.I.F1uorescentBrighteningAgent112,135及163;C.I.So1ventOrange2及45;C.I.SolventRed1,3,8,23,24,25,27及49;C.I.PigmentGreen10;C.I.PigmentBrown2等。上述吸光劑,相對於微影用阻劑下層膜形成組成物之全固形分,通常可以10質量%以下、較佳為5質量%以下之比例進行摻合。
流變性調整劑主要是使阻劑下層膜形成組成物之流動性向上提升,特別是在烘烤步驟中,以阻劑下層膜之膜厚均一性的提升或提高對通孔內部的阻劑下層膜形
成組成物之填充性為目的所添加。具體例方面,可舉出二甲基鄰苯二甲酸酯、二乙基鄰苯二甲酸酯、二異丁基鄰苯二甲酸酯、二己基鄰苯二甲酸酯、丁基異癸基鄰苯二甲酸酯等之苯二甲酸衍生物;二正丁基己二酸酯、二異丁基己二酸酯、二異辛基己二酸酯、辛基癸基己二酸酯等之己二酸衍生物、二正丁基馬來酸酯、二乙基馬來酸酯、二壬基馬來酸酯等之馬來酸衍生物;甲基油酸酯、丁基油酸酯、四氫糠基油酸酯等之油酸衍生物;或正丁基硬脂酸酯、甘油基硬脂酸酯等之硬脂酸衍生物。此等之流變性調整劑相對於微影用阻劑下層膜形成組成物之全固形分,通常可以未達30質量%之比例進行摻合。
接著補助劑,主要係使基板或阻劑與阻劑下層膜之密著性提升,特別是用以在顯像中阻劑不剝離為目的而添加。具體例方面,可舉出三甲基氯矽烷、二甲基乙烯基氯矽烷、甲基二苯基氯矽烷、氯甲基二甲基氯矽烷等之氯矽烷類、三甲基甲氧基矽烷、二甲基二乙氧基矽烷、甲基二甲氧基矽烷、二甲基乙烯基乙氧基矽烷、二苯基二甲氧基矽烷、苯基三乙氧基矽烷等之烷氧基矽烷類、六甲基二矽氮烷、N,N’-雙(三甲基矽烷基)脲、二甲基三甲基矽烷基胺、三甲基矽烷基咪唑等之矽氮烷類、乙烯基三氯矽烷、γ-氯丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷等之矽烷類、苯并***、苯并咪唑、吲唑、咪唑、2-巰基苯并咪唑、2-巰基苯并噻唑、2-巰基苯并噁唑、脲唑、硫脲嘧啶、巰基咪唑、
巰基嘧啶等之雜環式化合物或、1,1-二甲基脲、1,3-二甲基脲等之尿素、或硫脲化合物。此等之接著補助劑,相對於微影用阻劑下層膜形成組成物之全固形分,通常以未達5質量%、較佳為以未達2質量%之比例進行摻合。
本發明之微影用阻劑下層膜形成組成物中,為了不產生針孔或條紋等,且為了對表面不均之塗佈性進一步提升,係可摻合界面活性劑。界面活性劑方面,可舉例如聚氧乙烯月桂基醚、聚氧乙烯硬脂醯基醚、聚氧乙烯鯨蠟基醚、聚氧乙烯油醯基醚等之聚氧乙烯烷基醚類、聚氧乙烯辛基酚醚、聚氧乙烯壬基酚醚等之聚氧乙烯烷基烯丙基醚類、聚氧乙烯‧聚氧丙烯嵌段共聚物類、山梨醇酐單月桂酸酯、山梨醇酐單棕櫚酸酯、山梨醇酐單硬脂酸酯、山梨醇酐單油酸酯、山梨醇酐三油酸酯、山梨醇酐三硬脂酸酯等之山梨醇酐脂肪酸酯類、聚氧乙烯山梨醇酐單月桂酸酯、聚氧乙烯山梨醇酐單棕櫚酸酯、聚氧乙烯山梨醇酐單硬脂酸酯、聚氧乙烯山梨醇酐三油酸酯、聚氧乙烯山梨醇酐三硬脂酸酯等之聚氧乙烯山梨醇酐脂肪酸酯類等之非離子系界面活性劑、EF-Top EF301、EF303、EF352((股)Tohkem Product製、商品名)、Megafac F171、F173、R-30、R-40、R-40LM(大日本油墨(股)製、商品名)、Fluorad FC430、FC431(住友3M(股)製、商品名)、AsahiGuard AG710、Surflon S-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(股)製、商品名)等之氟系界面活性劑、有機矽氧烷聚合物
KP341(信越化學工業(股)製)等。此等之界面活性劑之摻合量,相對於本發明之微影用阻劑下層膜形成組成物之全固形分,通常為2.0質量%以下、較佳為1.0質量%以下。此等之界面活性劑可單獨添加,亦可以2種以上的組合予以添加。
本發明中,使上述之聚合物及交聯觸媒等溶解之溶劑(C)方面,可使用乙二醇單甲基醚、乙二醇單乙基醚、甲基賽路蘇乙酸酯、乙基賽路蘇乙酸酯、二乙二醇單甲基醚、二乙二醇單乙基醚、丙二醇、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚、丙二醇單乙基醚乙酸酯、丙二醇丙基醚乙酸酯、甲苯、二甲苯、甲基乙基酮、環戊酮、環己酮、2-羥基丙酸乙基酯、2-羥基-2-甲基丙酸乙基酯、乙氧基乙酸乙基酯、羥基乙酸乙基酯、2-羥基-3-甲基丁烷酸甲基酯、3-甲氧基丙酸甲基酯、3-甲氧基丙酸乙基酯、3-乙氧基丙酸乙基酯、3-乙氧基丙酸甲基酯、丙酮酸甲基酯、丙酮酸乙基酯、乙酸乙基酯、乙酸丁基酯、乳酸乙基酯、乳酸丁基酯等。此等之有機溶劑,可以單獨使用,或以2種以上之組合使用。
再者,可混合使用丙二醇單丁基醚、丙二醇單丁基醚乙酸酯等之高沸點溶劑。此等之溶劑之中,丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、乳酸乙基酯、乳酸丁基酯、及環己酮等對調平性的提升上較佳。
本發明中所用的阻劑,可使用光阻劑或電子線阻劑等。
被塗佈於由本發明之微影用阻劑下層膜形成組成物所形成之阻劑下層膜之上部的光阻劑方面,可使用負型、正型中任一者,可列舉由酚醛清漆樹脂與1,2-萘并醌二疊氮磺酸酯所成的正型光阻劑、具有可藉酸分解而使鹼溶解速度上昇之基的黏合劑與光酸產生劑所成的化學增幅型光阻劑、由鹼可溶性黏合劑與藉酸分解而使光阻劑之鹼溶解速度上昇之低分子化合物與光酸產生劑所成的化學增幅型光阻劑、由具有可藉酸分解而使鹼溶解速度上昇之基的黏合劑與藉酸分解而使光阻劑之鹼溶解速度上昇之低分子化合物與光酸產生劑所成的化學增幅型光阻劑、骨架中具有Si原子之光阻劑等,可舉例如Rohm and Haas公司製、商品名APEX-E。
又,在被塗佈於由本發明之組成物所形成之微影用阻劑下層膜之上部的電子線阻劑方面,可舉例如由在主鏈含Si-Si鍵結且末端含芳香族環之樹脂與藉由電子線的照射而產生酸之酸產生劑所成的組成物、或由被含羥基為N-羧基胺之有機基所取代之聚(p-羥基苯乙烯)與藉由電子線的照射而產生酸之酸產生劑所成的組成物等。後者之電子線阻劑組成物,乃藉由電子線照射使由酸產生劑產生的酸與聚合物側鏈之N-羧基胺氧基反應,聚合物側鏈分解為羥基並顯示鹼可溶性而溶解於鹼顯像液,形成阻劑圖型者。此藉由電子線的照射而產生酸之酸產生劑,可舉出1,1-雙[p-氯苯基]-2,2,2-三氯乙烷、1,1-雙[p-甲氧基苯基]-2,2,2-三氯乙烷、1,1-雙[p-氯苯基]-2,2-二氯乙烷、
2-氯-6-(三氯甲基)吡啶等之鹵素化有機化合物、三苯基鋶鹽、二苯基錪鹽等之鎓鹽、硝基苄基甲苯磺酸酯、二硝基苄基甲苯磺酸酯等之磺酸酯。
具有使用本發明之微影用阻劑下層膜形成組成物而形成的阻劑下層膜之阻劑,其顯像液方面,可使用氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨水等之無機鹼類、乙基胺、n-丙基胺等之第一胺類、二乙基胺、二-n-丁基胺等之第二胺類、三乙基胺、甲基二乙基胺等之第三胺類、二甲基乙醇胺、三乙醇胺等之醇胺類、四甲基銨氫氧化物、四乙基銨氫氧化物、膽鹼等之第4級銨鹽、吡咯、哌啶等之環狀胺類、等的鹼類之水溶液。再者,上述鹼類之水溶液中,亦可適當地添加異丙基醇等之醇類、非離子系等之界面活性劑予以使用。此等之中較佳的顯像液為第四級銨鹽、更佳為四甲基銨氫氧化物及膽鹼。
接著,若就本發明之阻劑圖型形成法進行說明,則精密積體電路元件之製造中所使用的基板(例如矽/二氧化矽被覆、玻璃基板、ITO基板等之透明基板)上藉由旋轉器、塗佈機等之適當塗佈方法塗佈阻劑下層膜形成組成物之後,進行烘烤而使其硬化,並作成塗佈型阻劑下層膜。在此,阻劑下層膜之膜厚方面,係以0.01~3.0μm為佳。又塗佈後進行烘烤的條件方面,係於80~400℃下0.5~120分鐘。之後於阻劑下層膜上直接地塗佈阻劑,或因應需要而將1層~數層的塗膜材料成膜於塗佈
型阻劑下層膜上之後塗佈阻劑,通過既定的遮罩來進行光或電子線之照射,藉由顯像、潤洗、乾燥,可獲得良好的阻劑圖型。視需要亦可進行光或電子線之照射後加熱(PEB:Post Exposure Bake)。然後,阻劑乃藉由前述步驟,將已經顯像除去之部分阻劑下層膜以乾式蝕刻去除,而得以於基板上形成所期望的圖型。
上述於光阻劑的曝光光,係近紫外線、遠紫外線或極端紫外線(例如,EUV)等之化學線,例如可使用248nm(KrF雷射光)、193nm(ArF雷射光)、157nm(F2雷射光)等之波長的光。光照射上,若為可自光酸產生劑產生酸之方法,在使用上並無特別限制,可以曝光量1~2000mJ/cm2、或10~1500mJ/cm2、或50~1000mJ/cm2為之。
又電子線阻劑之電子線照射,例如可使用電子線照射裝置來進行照射。
本發明中,係可經下述步驟來製造半導體裝置:於半導體基板上由本發明之阻劑下層膜形成組成物形成該阻劑下層膜之步驟、於其上形成阻劑膜之步驟、藉由光或電子線照射與顯像而形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻該阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
今後,阻劑圖型的微細化若繼續發展,會發生解像度的問題或是阻劑圖型會於顯像後倒塌之問題,並期望阻劑之薄膜化。因此,在基板加工上難以獲得充分的
阻劑圖型膜厚,所以,不只是對阻劑圖型,就連對在阻劑與欲加工之半導體基板之間所作成的阻劑下層膜,也必須有使其作為基板加工時的遮罩之機能的製程。如此的製程用之阻劑下層膜方面,被要求必須是具有與以往的高蝕刻率性阻劑下層膜不同,並具有與阻劑接近的乾式蝕刻速度之選擇比的微影用阻劑下層膜、具有較阻劑小的乾式蝕刻速度之選擇比的微影用阻劑下層膜,或者是具有較半導體基板小的乾式蝕刻速度之選擇比的微影用阻劑下層膜。又,可賦予如此的阻劑下層膜抗反射能,而得以一併具有以往的抗反射膜之機能。
另一方面,為了獲得微細的阻劑圖型,在阻劑下層膜之乾式蝕刻時,也開始使用使阻劑圖型與阻劑下層膜較阻劑顯像時的圖型寬幅變細的製程。如此的製程用之阻劑下層膜方面,乃被要求必須是具有與以往的高蝕刻率性抗反射膜不同,並具有與阻劑接近的乾式蝕刻速度之選擇比的阻劑下層膜。又,可賦予如此的阻劑下層膜抗反射能,而得以一併具有以往的抗反射膜之機能。
在使用如此的薄膜阻劑之製程上,乃重複下述行程,最終進行基板加工:將阻劑圖型以蝕刻製程轉印於其下層膜,並以將該下層膜作為遮罩來進行基板加工之製程,或是將阻劑圖型來蝕刻製程轉印於其下層膜,再使用不同的氣體組成以將已轉印至下層膜之圖型轉印至其下層膜。本發明之阻劑下層膜形成用組成物及由該組成物所形成之阻劑下層膜在此製程有效,且從本發明之組成物以
使用阻劑下層膜來加工基板時,乃是對加工基板(例如,基板上的熱氧化矽膜、氮化矽膜、聚矽膜等)充分地具有蝕刻耐性者。
本發明中,於基板上成膜本發明之阻劑下層膜後,係可於阻劑下層膜上直接塗佈阻劑,或視需要而可於阻劑下層膜上成膜1層~數層塗膜材料之後塗佈阻劑。藉此,阻劑之圖型寬幅會變狹窄,為了防止圖型倒塌,即使在薄薄地被覆阻劑的情況下,亦可藉由選擇適切的蝕刻氣體來進行基板的加工。
意即,可經由下述步驟來製造半導體裝置:於半導體基板上由本發明之阻劑下層膜形成組成物形成該阻劑下層膜之步驟、於其上形成以含矽成分等的塗膜材料所成之無機硬遮罩層之步驟、再於其上形成阻劑膜之步驟、藉由光或電子線之照射與顯像以形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻無機硬遮罩層之步驟、藉由已經圖型化之無機硬遮罩層來蝕刻該阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
於基板上由此阻劑下層膜形成組成物形成阻劑下層膜,於其上形成無機硬遮罩層,於其上形成阻劑膜,藉由曝光與顯像來形成阻劑圖型,將所形成之阻劑圖型轉印至無機硬遮罩層,將已轉印至無機硬遮罩層之阻劑圖型轉印至阻劑下層膜,並在該阻劑下層膜進行半導體基板的加工之製程中,本發明之阻劑下層膜形成組成物在以
下的點方面比較有利。此製程下,無機硬遮罩層係有藉由包含有機聚合物或無機聚合物與溶劑之塗佈型的組成物而實施的情況、藉由無機物之真空蒸鍍而實施的情況。無機物(例如,氮化氧化矽)之真空蒸鍍,雖是蒸鍍物堆積於阻劑下層膜表面,但此時阻劑下層膜表面的溫度會有上昇至400℃前後的情況。
相對於此,本發明之微影用阻劑下層膜形成組成物係因熱安定性高,由此所形成之阻劑下層膜,可防止因用以形成無機硬遮罩層之真空蒸鍍時或燒成時的分解物所導致對上層膜之污染,又,對燒成步驟的溫度裕度具有餘裕。
又,本發明之微影用阻劑下層膜形成組成物,在考慮作為抗反射膜的效果時,因光吸收部位被組入骨架中,故於加熱乾燥時不會有向光阻劑中的擴散物,又,光吸收部位因具有十分大的吸光性能,故抗反射光效果高。
再者,本發明之微影用阻劑下層膜形成組成物,可用作為膜形成材料,而該膜因製程條件而具有下述機能:防止光反射之機能,甚至是防止基板與光阻劑的相互作用之機能,或者是防止對光阻劑中所用的材料或光阻劑曝光時生成的物質對基板的壞作用之機能。
所以,由本發明之微影用阻劑下層膜形成組成物所形成之阻劑下層膜,係可用作為平坦化膜、阻劑層之防污染膜、具有乾式蝕刻選擇性之膜。藉此,得以輕易地、精度優地實施半導體製造的微影製程中之阻劑圖型形
成。
而且,加工半導體基板之後,由本發明之組成物所形成之阻劑下層膜可以鹼水溶液去除。
重量平均分子量係記載了以膠體滲透層析(GPC)所為之測定結果。
測定係使用東曹(股)製GPC裝置,且測定條件如下所示。
GPC管柱:Shodex〔註冊商標〕‧Asahipak〔註冊商標〕(昭和電工(股)製)
管柱溫度:40℃
溶劑:N,N-二甲基甲醯胺(DMF)
流量:0.6mL/分
標準試料:聚苯乙烯(東曹(股)製)
將N-(4-羥基苯基)甲基丙烯醯胺20.0g(大阪有機化學工業股份公司製)、甲基丙烯酸甲基酯(東京化成工業股份公司製)6.8g、羥基乙基丙烯酸酯(東京化成工業股份公司製)5.2g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)4.8g加入丙二醇單甲基醚147.3g中使其溶解。將此溶液滴入丙二醇單甲基醚61.4g加熱至85℃之300mL燒瓶中,滴下結束後約攪拌15小時。反應結束
後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)36.8g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)36.8g,於室溫下進行離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物的構造相當於上述式(A-2)中所示之構造。聚合物中的N-(4-羥基苯基)甲基丙烯醯胺單位:甲基丙烯酸甲基酯單位:羥基乙基丙烯酸酯單位為50莫耳%:30莫耳%:20莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為7600。
將N-(4-羥基苯基)甲基丙烯醯胺25.0g(大阪有機化學工業股份公司製)、羥基丙基丙烯酸酯(Aldrich公司製)18.4g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)6.5g加入丙二醇單甲基醚199.5g而使其溶解。將此溶液滴入丙二醇單甲基醚83.1g加熱至85℃之300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)49.9g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)49.9g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物,其構造相當於上述式(A-3)中所示之構造。聚合物
中的N-(4-羥基苯基)甲基丙烯醯胺單位:羥基丙基丙烯酸酯單位為50莫耳%:50莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為6100。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)25.0g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)4.5g加入丙二醇單甲基醚118.0g中並使其溶解。將此溶液滴入丙二醇單甲基醚49.2g加熱至85℃之300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)29.5g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)25.9g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物,其構造相當於上述式(B-1)所示之構造。聚合物為甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯的單獨聚合物。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為7200。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)
乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)25.0g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)5.0g加入丙二醇單甲基醚120.0g中並使其溶解。將此溶液滴入丙二醇單甲基醚50.0g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)30.0g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)30.0g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物,其構造相當於上述式(B-1)所示之構造。聚合物為甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯之單獨聚合物。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為1300。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)20.0g、丙烯酸甲基酯(東京化成工業股份公司製)7.1g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)4.9g加入丙二醇單甲基醚128.0g中並使其溶解。將此溶液滴入丙二醇單甲基醚53.3g加熱至85℃之300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX
〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)32.0g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)32.0g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-2)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:丙烯酸甲基酯單位為50莫耳%:50莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為4300。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)20.0g、丙烯酸甲基酯(東京化成工業股份公司製)7.1g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)5.4g加入丙二醇單甲基醚130.1中並使其溶解。將此溶液滴入丙二醇單甲基醚54.2g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)32.5g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)32.5g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-2)中所示之構造。聚合物中的
甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:丙烯酸甲基酯單位為50莫耳%:50莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為2746。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、2,2,2-三氟乙基甲基丙烯酸酯(東京化成工業股份公司製)6.9g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.3g加入丙二醇單甲基醚81.3g中並使其溶解。將此溶液滴入丙二醇單甲基醚33.9g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)20.3g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)20.3g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-3)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:2,2,2-三氟乙基甲基丙烯酸酯單位為50莫耳%:50莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為1500。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、丙烯酸甲基酯(東京化成工業股份公司製)2.1g、2,2,2-三氟乙基甲基丙烯酸酯(東京化成工業股份公司製)2.8g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.0g加入丙二醇單甲基醚71.6g中並使其溶解。將此溶液滴入丙二醇單甲基醚29.8g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)17.9g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)17.9g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-4)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:丙烯酸甲基酯單位:2,2,2-三氟乙基甲基丙烯酸酯單位為50莫耳%:30莫耳%:20莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為1500。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)
乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、丙烯酸甲基酯(東京化成工業股份公司製)2.1g、2,2,2-三氟乙基甲基丙烯酸酯(東京化成工業股份公司製)2.8g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.0g加入丙二醇單甲基醚71.6g中並使其溶解。將此溶液滴入丙二醇單甲基醚29.9g加熱至85℃之300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)17.9g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)17.9g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-4)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:丙烯酸甲基酯單位:2,2,2-三氟乙基甲基丙烯酸酯單位為50莫耳%:30莫耳%:20莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為6700。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、N-甲氧基甲基甲基丙烯醯胺(和光純藥股份公司製)1.1g、2,2,2,-三氟乙基甲基丙烯酸酯(東京化
成工業股份公司製)5.6g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.3g加入丙二醇單甲基醚79.8g中並使其溶解。將此溶液滴入丙二醇單甲基醚33.2g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)20.0g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)20.0g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物,其構造相當於上述式(B-5)中所示的構造。聚合物以甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:N-甲氧基甲基甲基丙烯醯胺單位:2,2,2,-三氟乙基甲基丙烯酸酯單位為50莫耳%:10莫耳%:40莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為1453。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、N-甲氧基甲基甲基丙烯醯胺(和光純藥股份公司製)2.1g、2,2,2-三氟乙基甲基丙烯酸酯(東京化成工業股份公司製)4.2g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.3g加入丙二醇單甲基醚78.2g中並使其溶解。將此溶液滴入丙二醇單甲基醚33.6g被加
熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)19.6g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)19.6g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物,其構造相當於上述式(B-5)中所示的構造。聚合物係以其中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:N-甲氧基甲基甲基丙烯醯胺單位:2,2,2-三氟乙基甲基丙烯酸酯單位為50莫耳%:20莫耳%:30莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為1500。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、羥基丙基丙烯酸酯(Aldrich公司製)2.2g、2,2,2-三氟乙基甲基丙烯酸酯(東京化成工業股份公司製)4.2g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.3g加入丙二醇單甲基醚78.3g中並使其溶解。將此溶液滴入丙二醇單甲基醚32.6g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX
〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)19.6g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)19.6g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-6)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:羥基丙基丙烯酸酯單位:2,2,2-三氟乙基甲基丙烯酸酯單位為50莫耳%:20莫耳%:30莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為2300。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)15.0g、N-甲氧基甲基甲基丙烯醯胺(和光純藥股份公司製)8.0g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)4.6g加入丙二醇單甲基醚110.4g中並使其溶解。將此溶液滴入丙二醇單甲基醚46.0g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)27.6g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)27.6g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所
得聚合物之構造相當於上述式(B-7)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:N-甲氧基甲基甲基丙烯醯胺單位為50莫耳%:50莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為2000。
將N-(4-羥基苯基)甲基丙烯醯胺5.0g(大阪有機化學工業股份公司製)、甲基丙烯酸甲基酯(東京化成工業股份公司製)0.7g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)0.7g加入丙二醇單甲基醚25.5g中並使其溶解。將此溶液滴入丙二醇單甲基醚10.6g被加熱至85℃之100mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)6.4g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)6.4g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(A-4)中所示之構造。聚合物中的N-(4-羥基苯基)甲基丙烯醯胺單位:甲基丙烯酸甲基酯單位為80莫耳%:20莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為4700。
將N-(4-羥基苯基)甲基丙烯醯胺1.0g(大阪有機化學工業股份公司製)、甲基丙烯酸甲基酯(東京化成工業股份公司製)5.1g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)0.7g加入丙二醇單甲基醚27.1g中並使其溶解。將此溶液滴入丙二醇單甲基醚11.3g被加熱至85℃之100mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)6.8g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)6.8g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(A-4)中所示之構造。聚合物中的N-(4-羥基苯基)甲基丙烯醯胺單位:甲基丙烯酸甲基酯單位為10莫耳%:90莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為4300。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例3中得到的樹脂0.12g之聚合物溶液1.08g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00058g溶解於丙二醇單甲基醚乙酸
酯1.9g、丙二醇單甲基醚0.31g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例4中得到的樹脂0.12g之聚合物溶液1.1g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.0006g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.26g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例5中得到的樹脂0.12g之聚合物溶液1.0g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.0006g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.35g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例6中得到的樹脂0.11g之聚合物溶液1.0g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.0006g溶解於丙二醇單甲基醚乙酸
酯1.9g、丙二醇單甲基醚0.33g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.56g之聚合物溶液5.6g、含有合成例7中得到的樹脂0.12g之聚合物溶液1.3g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.0006g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.28g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例10中得到的樹脂0.12g之聚合物溶液1.1g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.0006g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.27g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例11中得到的樹脂0.12g之聚合物溶液1.2g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00058g溶解於丙二醇單甲基醚乙酸
酯1.9g、丙二醇單甲基醚0.16g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例12中得到的樹脂0.12g之聚合物溶液1.1g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.27g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例2中得到的樹脂0.56g之聚合物溶液5.6g、含有合成例5中得到的樹脂0.14g之聚合物溶液1.2g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.37g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液
使含有合成例2中得到的樹脂0.54g之聚合物溶液5.6g、含有合成例7中得到的樹脂0.14g之聚合物溶液1.3g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸
酯1.9g、丙二醇單甲基醚0.35g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例2中得到的樹脂0.54g之聚合物溶液5.4g、含有合成例7中得到的樹脂0.16g之聚合物溶液1.6g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.29g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例2中得到的樹脂0.56g之聚合物溶液5.6g、含有合成例11中得到的樹脂0.14g之聚合物溶液1.5g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.15g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例2中得到的樹脂0.56g之聚合物溶液5.6g、含有合成例11中得到的樹脂0.14g之聚合物溶液1.3g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸
酯1.9g、丙二醇單甲基醚0.28g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例2中得到的樹脂0.50g之聚合物溶液2.7g、含有合成例13中得到的樹脂0.20g之聚合物溶液2.2g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00050g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚2.4g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例14中得到的樹脂1.1g之聚合物溶液8.9g、異氰酸酯系交聯劑(Degussa Japan(股)製、商品名:VESTANAT〔註冊商標〕B1358、基於異佛爾酮二異氰酸酯構造並以肟基所保護之封端聚異氰酸酯)0.3g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.001g溶解於丙二醇單甲基醚10.7g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例15中得到的樹脂1.1g之聚合物溶液8.3g、異氰酸酯系交聯劑(Degussa Japan(股)製、商品名:VESTANAT〔註冊商標〕B1358、基於異佛爾酮二異
氰酸酯構造並以肟基所保護之封端聚異氰酸酯)0.3g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.001g溶解於丙二醇單甲基醚11.3g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
(對光阻劑溶劑之溶出試驗)
將實施例1~14及比較例1~2中調製的阻劑下層膜形成組成物之溶液,使用旋轉塗佈機而塗佈於矽晶圓上。在加熱板上240℃燒成1分鐘,形成阻劑下層膜(膜厚0.20μm)。使此等之阻劑下層膜進行對使用於阻劑之溶劑的OK稀釋劑(製品名、東京應化工業(股):丙二醇單甲基醚:丙二醇單甲基醚乙酸酯以容積比計為7:3之比例含有)之浸漬試驗。殘膜率係將阻劑下層膜各自置於旋轉塗佈機上2000rpm之轉數下,並各自滴入作為溶劑之OK稀釋劑60秒鐘,立即使其以3000rpm旋轉30秒鐘。將結果顯示於表1。殘膜率係以(浸漬後之膜厚)/(浸漬前之膜厚)×100所計算的結果。
[表1]
(段差被覆性之評價)
將實施例1~14及比較例1~2中調製的阻劑下層膜形成組成物之溶液藉由旋轉器塗佈於段差基板上。使用的段差基板((股)ADVANTEC製)係段差之高度為400nm、L/S(線與間距)為120nm/120nm、被覆有氧化矽膜之基板。之後,將以240℃烘烤了60秒鐘之試料的剖面,以掃描型電子顯微鏡(SEM)觀察。將結果顯示於表2。將無孔隙所被覆者判斷為良好、將可見孔隙者判斷為不良。
[表2]
本發明可用於使用了微影用阻劑下層膜形成組成物之阻劑圖型的形成方法。而且,本發明可提供一種阻劑下層膜形成組成物,其係可自上層轉印圖型或於基板的加工時進行乾式蝕刻,基板加工後用以形成可以鹼水溶液去除之阻劑下層膜用的阻劑下層膜形成組成物。
Claims (8)
- 一種微影用阻劑下層膜形成組成物,其係含有:具丙烯醯胺構造或丙烯酸酯構造之聚合物(A)、具封端異氰酸酯構造之聚合物(B)與溶劑(C)。
- 如請求項1中記載的阻劑下層膜形成組成物,其中,上述聚合物(A)係含以式(1)所示之單位構造的聚合物:
- 如請求項2中記載的阻劑下層膜形成組成物,其中,式(1)中,R2為苯環。
- 如請求項1~請求項3中任1項記載之阻劑下層膜形成組成物,其中,上述聚合物(B)係含有以式(2)所示之單位構造的聚合物:
- 如請求項1~請求項4中任1項記載之阻劑下層膜形成組成物,其中,聚合物(A)與聚合物(B)係使羥基或羧基與封端異氰酸酯基以莫耳比1:0.005~1.0之比例所含者。
- 如請求項1~請求項5中任1項記載之阻劑下層膜形成組成物,其係進一步含交聯觸媒。
- 一種半導體裝置之製造方法,其係含下述步驟:於半導體基板上形成由請求項1~請求項6中任1項記載之阻劑下層膜形成組成物形成阻劑下層膜之步驟、於該阻劑下層膜上形成阻劑膜之步驟、藉由光或電子線之照射與顯像而於阻劑膜上形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
- 一種半導體裝置之製造方法,其係含下述步驟: 於半導體基板上形成由請求項1~請求項6中任1項記載之阻劑下層膜形成組成物形成阻劑下層膜之步驟、於該阻劑下層膜上形成無機硬遮罩層之步驟、進一步於無機硬遮罩層上形成阻劑膜之步驟、藉由光或電子線之照射與顯像而於阻劑膜上形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻無機硬遮罩層之步驟、藉由經圖型化之無機硬遮罩層蝕刻阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
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