TWI778945B - 包含具長鏈烷基之酚醛清漆的阻劑下層膜形成組成物 - Google Patents
包含具長鏈烷基之酚醛清漆的阻劑下層膜形成組成物 Download PDFInfo
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- TWI778945B TWI778945B TW105133726A TW105133726A TWI778945B TW I778945 B TWI778945 B TW I778945B TW 105133726 A TW105133726 A TW 105133726A TW 105133726 A TW105133726 A TW 105133726A TW I778945 B TWI778945 B TW I778945B
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- 150000003384 small molecules Chemical class 0.000 description 1
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
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- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
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- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
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Classifications
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract
藉由提高聚合物之熱回流性以改善燒成時的對圖型之填充性,並用於在基板上形成平坦化性高的塗膜的阻劑下層膜形成組成物。
Description
本發明為關於一種阻劑下層膜形成組成物,其係用於在具有段差之基板形成平坦化膜,以及關於使用該阻劑下層膜的經平坦化的層合基板之製造方法。
以往以來,在半導體裝置之製造中,藉由使用光阻劑組成物的微影(lithography)來進行微細加工。前述微細加工為下述加工法:在矽晶圓等的被加工基板上形成光阻劑組成物之薄膜、在該薄膜上隔著描繪了半導體裝置之圖型的遮罩圖型來照射紫外線等的活性光線、進行顯影、將所得之光阻劑圖型作為保護膜來對矽晶圓等的被加工基板進行蝕刻處理。然而近年來,隨著半導體裝置之高積體化之發展,所使用的活性光線亦逐漸從KrF準分子雷射(248nm)短波長化至ArF準分子雷射(193nm)。隨著如此,活性光線從基板的漫反射或駐波的影響為大問題,而廣泛採用了在光阻劑與被加工基板之間設置抗反射
膜之方法。又,以進一步的微細加工為目的,進行著使用超紫外線(EUV、13.5nm)或電子束(EB)來作為活性光線的微影技術之開發。在EUV微影或EB微影中,一般不會產生從基板的漫反射或駐波,因此不需要特定的抗反射膜,但作為以改善阻劑圖型的解析性或密著性為目的之補助膜,開始對阻劑下層膜進行廣泛研究。
但隨著曝光波長之短波長化所造成的焦點深度之降低,為了形成精度良好且為所期望之阻劑圖型時,提升形成於基板上之被膜之平坦化性將為重要。亦即,為了製造具有微細的設計規則(design rule)的半導體裝置,可在基板上形成未有段差的平坦塗面的阻劑下層膜為必須且不可或缺者。
例如已揭示一種含有含羥基之咔唑酚醛清漆樹脂的阻劑下層膜形成組成物(參照專利文獻1)。
又,已揭示一種含有二芳基胺酚醛清漆樹脂的阻劑下層膜形成組成物(參照專利文獻2)。
又,已揭示一種含有交聯性化合物的阻劑下層膜形成組成物,該交聯性化合物具有碳原子數2~10之烷氧基甲基、碳原子數1~10之烷基(參照專利文獻3)。
[專利文獻1]國際公開WO2012/077640號公報
[專利文獻2]國際公開WO2013/047516號公報
[專利文獻3]國際公開WO2014/208542號公報
阻劑下層膜形成組成物中,為了避免在層合光阻劑組成物或相異的阻劑下層膜之際產生混雜(mixing),而藉由於主要成份的聚合物樹脂中導入自交聯性部位或適當地添加交聯劑、交聯觸媒等,並以高溫進行燒成(烘烤/baking),來使塗佈膜熱硬化。因此,可以不混雜光阻劑組成物或相異的阻劑下層膜之方式來進行層合。然而,由於如此般的熱硬化性阻劑下層膜形成組成物係包含:具有羥基等的熱交聯形成官能基的聚合物、交聯劑、與酸觸媒(酸產生劑),對形成於基板上的圖型(例如,孔洞或溝槽構造)填充之際,經由燒結而促使交聯反應進行,而產生黏度上昇,使得對圖型之填充性惡化,因而容易降低成膜後的平坦化性。
本發明之目的係藉由提高聚合物之熱回流(reflow)性以改善燒成時的對圖型之填充性。即,提供一種阻劑下層膜形成組成物,為了提升聚合物之熱回流性,藉由導入可降低聚合物之玻璃轉移溫度的直鏈型或分支型長鏈烷基,於燒成時的交聯反應開始之前可展現出充分降低黏度,而可在基板上形成平坦化性高的塗膜。
作為本發明之第1觀點為一種阻劑下層膜形成組成物,其係包含藉由芳香族化合物(A)、與醛(B)之反應而得到的酚醛清漆樹脂,該醛(B)係具有鍵結於碳原子數2至26之烷基之第2級碳原子或第3級碳原子的甲醯基。
作為第2觀點,如前述第1觀之阻劑下層膜形成組成物,其中,酚醛清漆樹脂係包含下述式(1):
(式(1)中,A係表示自碳原子數6至40之芳香族化合物所衍生之二價基,b1係表示碳原子數1至16之烷基,b2係表示氫原子或碳原子數1至9之烷基)所表示之單位構造。
作為第3觀點,如前述第2觀點之阻劑下層膜形成組成物,其中,A係自包含胺基、羥基、或其雙方之芳香族化合物所衍生之二價基。
作為第4觀點,如前述第2觀點之阻劑下層膜形成組成物,其中,A係自包含芳基胺化合物、苯酚化合物(phenol compound)、或其雙方之芳香族化合物所衍生
之二價基。
作為第5觀點,如前述第2觀點之阻劑下層膜形成組成物,其中,A係自苯胺、二苯基胺、苯基萘基胺、羥基二苯基胺、咔唑、酚、N,N’-二苯基乙二胺、N,N’-二苯基-1,4-苯二胺、或多核苯酚(polynuclear phenol)所衍生之二價基。
作為第6觀點,如前述第5觀點之阻劑下層膜形成組成物,其中,多核苯酚係二羥基苯、三羥基苯、羥基萘、二羥基萘、三羥基萘、參(4-羥基苯基)甲烷、參(4-羥基苯基)乙烷、2,2’-聯苯、或1,1,2,2-肆(4-羥基苯基)乙烷。
做為第7觀點,如前述第1觀點之阻劑下層膜形成組成物,其中,酚醛清漆樹脂係包含下述式(2):
(式(2)中,a1及a2係分別表示可經取代之苯環或萘環,R1係表示第2級胺基或第3級胺基、可經取代之碳原子數1至10之二價烴基、伸芳基、或該等基任意鍵結而成之二價基,b3係表示碳原子數1至16之烷基,b4係表示氫原子或碳原子數1至9之烷基)所表示之單位構造。
作為第8觀點,如前述第1觀點至第7觀點中任一項之阻劑下層膜形成組成物,其中,進而包含酸及/或酸產
生劑。
作為第9觀點,如前述第1觀點至第8觀點中任一項之阻劑下層膜形成組成物,其中,進而包含交聯劑。
作為第10觀點為一種阻劑下層膜之形成方法,其係藉由將前述第1觀點至第9觀點中任一項之阻劑下層膜形成組成物塗佈至具有段差之半導體基板上並燒成,而該基板之具有段差之部份與未具有段差之部份之塗面段差為3至73nm。
作為第11觀點為一種半導體之製造中所使用的阻劑圖型之形成方法,其係包含將前述第1觀點至第9觀點中任一項之阻劑下層膜形成組成物塗佈至半導體基板上並燒成來形成下層膜之步驟。
作為第12觀點為一種半導體裝置之製造方法,其係包含:由前述第1觀點至第9觀點中任一項之阻劑下層膜形成組成物在半導體基板上形成下層膜之步驟、在其上方形成阻劑膜之步驟、藉由光或電子束之照射與顯影來形成阻劑圖型之步驟、藉由所形成之阻劑圖型來蝕刻該下層膜之步驟、及藉由經圖型化之下層膜來加工半導體基板之步驟。
作為第13觀點為一種半導體裝置之製造方法,其係包含:由前述第1觀點至第9觀點中任一項之阻劑下層膜形
成組成物在半導體基板上形成下層膜之步驟、在其上方形成硬遮罩之步驟、進而在其上方形成阻劑膜之步驟、藉由光或電子束之照射與顯影來形成阻劑圖型之步驟、藉由所形成之阻劑圖型來蝕刻該硬遮罩之步驟、藉由經圖型化之硬遮罩來蝕刻該下層膜之步驟、及藉由經圖型化之下層膜來加工半導體基板之步驟。作為第14觀點,如前述第13觀點之製造方法,其中,硬遮罩係藉由無機物之蒸鍍所形成者。
本發明之阻劑下層膜形成組成物,藉由將具有降低聚合物之玻璃轉移溫度(Tg)之作用的長鏈烷基導入至該阻劑下層膜形成組成物中之主要樹脂骨架,而可提高燒成時之熱回流性。因此,將本發明之阻劑下層膜形成組成物塗佈至基板上並燒成時,由於聚合物的高熱回流性,而可提升對基板上的圖型內之填充性。此外,本發明之阻劑下層膜形成組成物,無論基板上的開放區域(非圖型區域)、或DENSE(密)及ISO(粗)之圖型區域,皆可在基板上形成平坦之膜。因此,藉由本發明之阻劑下層膜形成組成物,可同時滿足對圖型之填充性能、與填充後之平坦化性能,而可形成優異的平坦化膜。
進而,由本發明之阻劑下層膜形成組成物所形成之下
層膜係具有適當之抗反射效果,且對於阻劑膜具有較大之乾式蝕刻速度,故可進行基板之加工。
本發明為一種阻劑下層膜形成組成物,其係包含藉由芳香族化合物(A)、與醛(B)之反應而得到的酚醛清漆樹脂,該醛(B)係具有鍵結於碳原子數2至26、或2至19之烷基之第2級碳原子或第3級碳原子的甲醯基。
本發明中上述之微影用阻劑下層膜形成組成物為包含上述樹脂與溶劑。然後,因應所需地可包含交聯劑、酸、酸產生劑、界面活性劑等。
該組成物之固體成份為0.1至70質量%,或0.1至60質量%。固體成份係由阻劑下層膜形成組成物中除去溶劑後之全成份之含有比例。固體成份中,可以1至100質量%、或1至99.9質量%、或50至99.9質量%、或50至95質量%、或50至90質量%之比例來含有上述聚合物。
本發明中所使用的聚合物之重量平均分子量為500至1000000、或600至200000。
本發明中所使用的酚醛清漆樹脂係可包含式(1)所表示之單位構造。
式(1)中,A係表示自碳原子數6至40之芳香族化合物所衍生之二價基。b1係表示碳原子數1至16、或1
至9之烷基,b2係表示氫原子或碳原子數1至9之烷基。當b1與b2同時為具有碳原子數1至16、或1至9之烷基的分支型烷基時,而具有b1為碳原子數1至16、或1至9之烷基、b2為氫原子的直鏈型烷基之情形。
A係可設為自胺基、羥基、或其雙方之芳香族化合物所衍生之二價基。然後,A係可設為自芳基胺化合物、苯酚化合物、或其雙方之芳香族化合物所衍生之二價基。更具體而言,A係可設為自苯胺、二苯基胺、苯基萘基胺、羥基二苯基胺、咔唑、酚、N,N’-二苯基乙二胺、N,N’-二苯基-1,4-苯二胺、或多核苯酚所衍生之二價基。
作為上述多核苯酚,可舉例如二羥基苯、三羥基苯、羥基萘、二羥基萘、三羥基萘、參(4-羥基苯基)甲烷、參(4-羥基苯基)乙烷、2,2’-聯苯、或1,1,2,2-肆(4-羥基苯基)乙烷等。
上述酚醛清漆樹脂係可包含較式(1)所表示之單位構造更為具體化的式(2)所表示之單位構造。式(1)所表示之單位構造之特徵係反映於式(2)所表示之單位構造。
藉由式(2)中相當於(a1-R1-a2)部份之芳香族化合物(A)、與具有鍵結於第3級碳原子的甲醯基之醛(B)之反應,可得到具有式(2)所表示之單位構造之酚醛清漆樹脂。
相當於(a1-R1-a2)部份之芳香族化合物(A),可舉例如二苯基胺、苯基萘基胺、羥基二苯基胺、參(4-羥
基苯基)乙烷、N,N’-二苯基乙二胺、2,2’-聯苯、N,N’-二苯基-1,4-苯二胺等。
式(2)中,a1及a2係分別表示可經取代之苯環或萘環,R1係表示第2級胺基或第3級胺基、可經取代之碳原子數1至10、或碳原子數1至6、或碳原子數1至2之二價烴基、伸芳基、或該等基任意鍵結而成之二價基。作為該等的伸芳基,可舉例如伸苯基、伸萘基等的有機基。a1及a2中作為取代基可舉例如羥基。
b3係表示碳原子數1至16、或1至9之烷基,b4係表示氫原子或碳原子數1至9之烷基。當b3與b4同時為具有碳原子數1至16、或1至9之烷基的分支型烷基時,而具有b3為碳原子數1至16、或1至9之烷基、b4為氫原子的直鏈型烷基之情形。
式(2)中,作為R1可舉例如第2級胺基、第3級胺基。若為第3級胺基時,可採用經烷基取代之構造。該等胺基可較佳使用第2級胺基。
又,式(2)中,R1之定義的「可經取代之碳原子數1至10、或碳原子數1至6、或碳原子數1至2之二價烴基」,可舉例如亞甲基或伸乙基,作為取代基,可舉例苯基、萘基、羥基苯基、羥基萘基。
上述式中,作為碳原子數1至16、及1至9之烷基,可舉例如甲基、乙基、n-丙基、i-丙基、環丙基、n-丁基、i-丁基、s-丁基、t-丁基、環丁基、1-甲基-環丙基、2-甲基-環丙基、n-戊基、1-甲基-n-丁基、2-甲基
-n-丁基、3-甲基-n-丁基、1,1-二甲基-n-丙基、1,2-二甲基-n-丙基、2,2-二甲基-n-丙基、1-乙基-n-丙基、環戊基、1-甲基-環丁基、2-甲基-環丁基、3-甲基-環丁基、1,2-二甲基-環丙基、2,3-二甲基-環丙基、1-乙基-環丙基、2-乙基-環丙基、n-己基、1-甲基-n-戊基、2-甲基-n-戊基、3-甲基-n-戊基、4-甲基-n-戊基、1,1-二甲基-n-丁基、1,2-二甲基-n-丁基、1,3-二甲基-n-丁基、2,2-二甲基-n-丁基、2,3-二甲基-n-丁基、3,3-二甲基-n-丁基、1-乙基-n-丁基、2-乙基-n-丁基、1,1,2-三甲基-n-丙基、1,2,2-三甲基-n-丙基、1-乙基-1-甲基-n-丙基、1-乙基-2-甲基-n-丙基、n-己基、n-庚基、n-辛基、n-壬基、n-十三烷基、n-十六烷基等。
又,上述式中,作為碳原子數1至16、或1至9之烷基可舉例如上述之示例,但特別可舉例甲基、乙基、n-丙基、i-丙基、n-丁基、i-丁基、s-丁基、t-丁基等,亦可組合該等使用。
本發明中所使用的上述醛(B),可示例如下述。
芳香族化合物(A)、與醛(B)之反應,上述A與上述B係以1:0.5至2.0、或1:1之莫耳比來反應為較佳。
作為在上述縮合反應使用的酸觸媒,可使用例如硫酸、磷酸、過氯酸等的礦酸類、p-甲苯磺酸、p-甲苯磺酸一水合物、甲烷磺酸、三氟甲烷磺酸等的有機磺酸類、甲酸、草酸等的羧酸類。酸觸媒之使用量,可依使用酸類之
種類而予以各種之選擇。通常而言,相對於包含芳香族環之有機化合物A之100質量份為0.001至10000質量份,較佳為0.01至1000質量份,又較佳為0.1至100質量份。
上述之縮合反應亦可在無溶劑下進行,但通常為使用溶劑來進行。作為溶劑,只要是不會阻礙反應者即可全數使用。可舉例如1,2-二甲氧基乙烷、二乙二醇二甲基醚、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、丁基賽路蘇(butyl cellosolve)、四氫呋喃(THF)、二噁烷等的醚類。又,所使用的酸觸媒若例如像甲酸般的液狀物時,亦可兼具作為溶劑之作用。
縮合時之反應溫度,通常為40℃至200℃。反應時間可依反應溫度而予以各種選擇,但通常為30分至50小時左右。
如上述般操作所得之聚合物之重量平均分子量通常為500至1000000、或600至200000。
作為藉由芳香族化合物(A)與醛(B)之反應所得之酚醛清漆樹脂,可舉例如包含下述單位構造之酚醛清漆樹脂。
本發明之阻劑下層膜形成組成物係可包含交聯劑成份。作為該交聯劑,可舉例如三聚氰胺系、經取代之脲系、或該等之聚合物系等。較佳為具有至少2個的可形成交聯的取代基,例如甲氧基甲基化乙炔脲、丁氧基甲基化乙炔脲、甲氧基甲基化三聚氰胺、丁氧基甲基化三聚氰胺、甲氧基甲基化苯併胍胺、丁氧基甲基化苯併胍胺、甲氧基甲基化脲、丁氧基甲基化脲、甲氧基甲基化硫脲、或甲氧基甲基化硫脲等的化合物。又,亦可使用該等化合物之縮合物。
又,作為上述交聯劑,可使用耐熱性高的交聯劑。作為耐熱性高的交聯劑,較佳可使用分子內具有芳香族環(例如,苯環、萘環)之可形成交聯之取代基的化合物。
該等的化合物,可舉例如具有下述式(3)所表示之部份構造之化合物、或具有下述式(4)所表示之
重複單位之聚合物或低聚物。
上述R11、R12、R13、及R14係氫原子或碳原子數1至10之烷基,該等之烷基可使用上述之示例內容。n11係表示滿足1≦n11≦6-n12之整數,n12係表示滿足1≦n12≦5之整數,n13係表示滿足1≦n13≦4-n14之整數,n14係表示滿足1≦n14≦3之整數。
式(3)及式(4)所表示之化合物、聚合物、低聚物係可示例如下述。記號Me係表示甲基。
上述化合物可以旭有機材工業(股)、本州化學工業(股)之製品而取得。例如上述交聯劑中以式(3-24)所表示之化合物,可以旭有機材工業(股)、商品名TM-BIP-A而取得。
交聯劑之添加量,依所使用之塗佈溶劑、所使用之底層基板、所要求之溶液黏度、所要求之膜形狀等而有所變動,一般相對於全固體成份為0.001至80質量%,較佳為0.01至50質量%,更佳為0.05至40質量%。該等交聯劑
亦可藉由自縮合而引起交聯反應,但本發明之上述聚合物中存在交聯性取代基時,可與該等之交聯性取代基引起交聯反應。
本發明中,作為用於促進上述交聯反應之觸媒,可調配p-甲苯磺酸、三氟甲烷磺酸、吡啶鎓P-甲苯磺酸、水楊酸、5-磺醯水楊酸、4-酚磺酸、吡啶鎓4-酚磺酸、樟腦磺酸、4-氯苯磺酸、苯二磺酸、1-萘磺酸、檸檬酸、安息香酸、羥基安息香酸、萘羧酸等的酸性化合物及/或2,4,4,6-四溴環己二烯、安息香甲苯磺酸酯、2-硝基苄基甲苯磺酸酯、其他有機磺酸烷基酯等的熱酸產生劑。相對於全固體成份,調配量為0.0001至20質量%,較佳為0.0005至10質量%,更佳為0.01至3質量%。
本發明之微影用阻劑下層膜形成組成物,為了使其與微影步驟中被覆於上層的光阻劑之酸性度一致,可添加光酸產生劑。作為較佳的光酸產生劑,可舉例如雙(4-t-丁基苯基)錪三氟甲烷磺酸酯、三苯基磺鋶三氟甲烷磺酸酯等的鎓鹽系光酸產生劑類、苯基-雙(三氯甲基)-s-三嗪等的含鹵素之化合物系光酸產生劑類、安息香甲苯磺酸酯、N-羥基琥珀醯亞胺三氟甲烷磺酸酯等的磺酸系光酸產生劑類等。相對於全固體成份,上述光酸產生劑為0.2至10質量%,較佳為0.4至5質量%。
本發明之微影用阻劑下層膜組成物中,除上述以外,因應所需地可進而添加吸光劑、流變調整劑、接著補助劑、界面活性劑等。
作為進而的吸光劑,例如「工業用色素之技術與市場」(CMC出版)或「染料便覽」(有機合成化學協會編)所記載之市售吸光劑,可適當地使用例如C.I.Disperse Yellow 1、3、4、5、7、8、13、23、31、49、50、51、54、60、64、66、68、79、82、88、90、93、102、114及124;C.I.Disperse Orange1、5、13、25、29、30、31、44、57、72及73;C.I.Disperse Red 1、5、7、13、17、19、43、50、54、58、65、72、73、88、117、137、143、199及210;C.I.Disperse Violet 43;C.I.Disperse Blue 96;C.I.Fluorescent Brightening Agent 112、135及163;C.I.Solvent Orange2及45;C.I.Solvent Red 1、3、8、23、24、25、27及49;C.I.Pigment Green 10;C.I.Pigment Brown 2等。相對於微影用阻劑下層膜組成物之全固體成份,上述吸光劑通常為10質量%以下,較佳以5質量%以下之比例來調配。
流變調整劑,主要為提升阻劑下層膜形成組成物之流動性,特別是烘烤步驟中,以提升阻劑下層膜之膜厚均勻性或提高阻劑下層膜形成組成物對孔洞(hole)內部之填充性之目的而添加者。作為具體例,可舉例如二甲基鄰苯二甲酸酯、二乙基鄰苯二甲酸酯、二異丁基鄰苯二甲酸酯、二己基鄰苯二甲酸酯、丁基異癸基鄰苯二甲酸酯等的鄰苯二甲酸衍生物、二正丁基己二酸酯、二異丁基己二酸酯、二異辛基己二酸酯、辛基癸基己二酸酯等的己二酸衍生物、二正丁基馬來酸酯、二乙基馬來酸酯、二壬
基馬來酸酯等的馬來酸衍生物、甲基油酸酯、丁基油酸酯、四氫糠基油酸酯等的油酸衍生物、或正丁基硬脂酸酯、甘油基硬脂酸酯等的硬脂酸衍生物等。該等的流變調整劑,相對於微影用阻劑下層膜組成物之全固體成份,通常為以未滿30質量%之比例來調配。
接著補助劑,主要為提升基板或阻劑與阻劑下層膜形成組成物之密著性,特別是於顯影中,就防止阻劑產生剝離之目的所添加者。作為具體例,可舉例如三甲基氯矽烷、二甲基乙烯基氯矽烷、甲基二苯基氯矽烷、氯甲基二甲基氯矽烷等的氯矽烷類、三甲基甲氧基矽烷、二甲基二乙氧基矽烷、甲基二甲氧基矽烷、二甲基乙烯基乙氧基矽烷、二苯基二甲氧基矽烷、苯基三乙氧基矽烷等的烷氧基矽烷類、六甲基二矽氮烷、N,N’-雙(三甲基矽烷基)脲、二甲基三甲基矽烷基胺、三甲基矽烷基咪唑等的矽氮烷類、乙烯基三氯矽烷、γ-氯丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷等的矽烷類、苯併***、苯併咪唑、吲唑、咪唑、2-氫硫基苯併咪唑、2-氫硫基苯併噻唑、2-氫硫基苯併噁唑、脲唑、硫尿嘧啶、氫硫基咪唑、氫硫基嘧啶等的雜環式化合物、或1,1-二甲基脲、1,3-二甲基脲等的脲、或硫脲化合物。該等的接著補助劑,相對於微影用阻劑下層膜組成物之全固體成份,通常為以未滿5質量%、較佳為未滿2質量%之比例來調配。
本發明之微影用阻劑下層膜組成物中,就不
會產生針孔(pinhole)或皺痕等、並更能提升對於表面斑紋之塗佈性,可添加界面活性劑。作為界面活性劑,可舉例如聚氧乙烯月桂醚、聚氧乙烯硬脂醚、聚氧乙烯鯨臘醚、聚氧乙烯油醚等的聚氧乙烯烷醚類、聚氧乙烯辛基酚醚、聚氧乙烯壬基酚醚等的聚氧乙烯烷基烯丙基醚類、聚氧乙烯.聚氧丙烯基嵌段共聚物類、山梨糖醇單月桂酯、山梨糖醇單棕櫚酸酯、山梨糖醇單硬脂酸酯、山梨糖醇單油酸酯、山梨糖醇三油酸酯、山梨糖醇三硬脂酸酯等的山梨糖醇脂肪酸酯類、聚氧乙烯山梨糖醇單月桂酯、聚氧乙烯山梨糖醇單棕櫚酸酯、聚氧乙烯山梨糖醇單硬脂酸酯、聚氧乙烯山梨糖醇三油酸酯、聚氧乙烯山梨糖醇三硬脂酸酯等的聚氧乙烯山梨糖醇脂肪酸酯類等的非離子系界面活性劑、F-TOP EF301、EF303、EF352((股)陶氏化學製造製、商品名)、MegaFace F171、F173、R-30(DIC(股)製、商品名)、Florade FC430、FC431(住友3M(股)製、商品名)、ASAHIGATE AG710、Surfuron S-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(股)製、商品名)等氟系界面活性劑、有機矽氧烷聚合物KP341(信越化學工業(股)製)等。該等的界面活性劑之調配量,相對於本發明之微影用阻劑下層膜組成物之全固體成份,通常為2.0質量%以下、較佳為1.0質量%以下。該等的界面活性劑可單獨添加亦可,或將2種以上組合後添加亦可。
本發明中,作為可溶解上述之聚合物及交聯
劑成份、交聯觸媒等之溶劑,可使用乙二醇單甲基醚、乙二醇單乙基醚、甲基賽路蘇(cellosolve)乙酸酯、乙基賽路蘇乙酸酯、二乙二醇單甲基醚、二乙二醇單乙基醚、丙二醇、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚、丙二醇單乙基醚乙酸酯、丙二醇丙基醚乙酸酯、甲苯、二甲苯、甲基乙基酮、環戊酮、環己酮、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、乙氧基乙酸乙酯、羥基乙酸乙酯、2-羥基-3-甲基丁烷酸甲酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸乙酯、3-乙氧基丙酸甲酯、丙酮酸甲酯、丙酮酸乙酯、乙酸乙酯、乙酸丁酯、乳酸乙酯、乳酸丁酯等。該等的有機溶劑可單獨使用,或將2種以上組合使用。
更,可混合丙二醇單丁基醚、丙二醇單丁基酮乙酸酯等的高沸點溶劑來使用。該等的溶劑中,又以丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、乳酸乙酯、乳酸丁酯、及環己酮等可提升平整性,對此為較佳。
本發明中所使用的阻劑為光阻劑或電子束阻劑。
本發明中,作為塗佈於微影用阻劑下層膜之上部的光阻劑,可使用負型、正型中之任一者皆可,已知有:由酚醛清漆樹脂與1,2-萘醌二疊氮磺酸酯所構成之正型光阻劑;由具有因為酸而分解並使鹼溶解速度上昇的基團的黏結劑與光酸產生劑所構成的化學增幅型光阻劑;由鹼可溶性黏結劑、因為酸而分解並使光阻劑的鹼溶解速度上昇的
低分子化合物與光酸產生劑所構成的化學增幅型光阻劑;由具有因為酸而分解並使鹼溶解速度上昇的基團的黏結劑、因為酸而分解並使光阻劑的鹼溶解速度上昇的低分子化合物與光酸產生劑所構成的化學增幅型光阻劑;骨架具有Si原子的光阻劑等,可列舉例如Rohm and Haas公司製的商品APEX-E。
另外在本發明中,作為塗佈於微影用阻劑下層膜上部的電子束阻劑,可列舉例如:由主鏈具有Si-Si鍵結且末端含芳香族環的樹脂與藉由電子束之照射而產生酸的酸產生劑所構成之組成物;或由羥基被含有N-羧醯胺的有機基取代而成的聚(p-羥基苯乙烯)與藉由電子束之照射而產生酸的酸產生劑所構成的組成物等。後者的電子束阻劑組成物中,藉由電子束照射而由酸產生劑產生的酸,會與聚合物側鏈的N-羧醯胺氧基發生反應,聚合物側鏈分解成羥基,表現出鹼可溶性,而溶解於鹼顯影液,形成阻劑圖型。這種藉由電子束之照射而產生酸的酸產生劑,可列舉1,1-雙[p-氯苯基]-2,2,2-三氯乙烷、1,1-雙[p-甲氧基苯基]-2,2,2-三氯乙烷、1,1-雙[p-氯苯基]-2,2-二氯乙烷、2-氯-6-(三氯甲基)吡啶等的鹵素化有機化合物、三苯基鋶鹽、二苯基碘鎓鹽等的鎓鹽、硝基苄基甲苯磺酸酯、二硝基苄基甲苯磺酸酯等的磺酸酯。
具有使用本發明之微影用阻劑下層膜組成物所形成的阻劑下層膜的阻劑,其顯影液可使用氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨水等的無機鹼
類、乙基胺、n-丙基胺等的一級胺類、二乙基胺、二-n-丁基胺等的二級胺類、三乙基胺、甲基二乙基胺等的三級胺類、二甲基乙醇胺、三乙醇胺等的醇胺類、四甲基氫氧化銨、四乙基氫氧化銨、膽鹼等的四級銨鹽、吡咯、哌啶等的環狀胺類等的鹼類的水溶液。此外還亦可在上述鹼類的水溶液中適量添加異丙醇等的醇類、非離子系等的界面活性劑而使用。該等之中,較佳的顯影液為四級銨鹽,更佳為四甲基氫氧化銨及膽鹼。
接下來針對本發明之阻劑圖型之形成方法作說明,在精密積體電路元件的製造所使用的基板(例如矽/二氧化矽被覆、玻璃基板、ITO基板等的透明基板)上,藉由旋轉塗佈機、塗佈機等的適當的塗佈方法來塗佈阻劑下層膜形成組成物,然後進行烘烤使其硬化,而製作出塗佈型下層膜。此處,阻劑下層膜的膜厚宜為0.01至3.0μm。另外,塗佈後進行烘烤的條件為80至400℃、0.5至120分鐘。然後藉由直接在阻劑下層膜上塗佈阻劑,或因應所需地使一層至數層的塗膜材料在塗佈型下層膜上成膜然後塗佈阻劑,透過指定光罩進行光或電子束之照射與顯影、清洗、乾燥,可得到良好的阻劑圖型。亦可因應所需地在照射光線或電子束後,進行加熱(PEB:Post Exposure Bake)。然後,將藉由前述步驟而使阻劑顯影除去的部分的阻劑下層膜利用乾式蝕刻除去,可在基板上形成所期望的圖型。
上述光阻劑的曝光光線,可採用近紫外線、
遠紫外線、或超紫外線(例如EUV,波長13.5nm)等的化學線,例如248nm(KrF雷射光)、193nm(ArF雷射光)、157nm(F2雷射光)等的波長的光線。照光時,只要是可由光酸產生劑產生酸的方法即可使用,並無特別限制,曝光量設定為1至2000mJ/cm2、或10至1500mJ/cm2、或50至1000mJ/cm2。
另外,電子束阻劑之電子束照射,可使用例如電子束照射裝置。
本發明中,可經由下述步驟來製造半導體裝置:由阻劑下層膜形成組成物在半導體基板上形成阻劑下層膜之步驟、在其上方形成阻劑膜之步驟、藉由光或電子束之照射與顯影來形成阻劑圖型之步驟、藉由所形成之阻劑圖型來蝕刻該阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜來加工半導體基板之步驟。
今後若阻劑圖型朝向微細化發展,則會發生解析度的問題或阻劑圖型在顯影後倒塌的問題,而開始希望使阻劑薄膜化。但是卻因此不易得到足以進行基板加工的阻劑圖型膜厚,所以逐漸需要有一種製程,其不僅是對於阻劑圖型,對於設置於阻劑與被加工的半導體基板之間的阻劑下層膜亦要求在基板加工時同樣具有作為遮罩之機能。作為如此般製程用的阻劑下層膜,與以往的高蝕刻率的阻劑下層膜不同,需要是:具有與阻劑相近的乾式蝕刻速度的選擇比的微影用阻劑下層膜、具有比阻劑小的乾式蝕刻速度的選擇比的微影用阻劑下層膜、或具有比半導體
基板小的乾式蝕刻速度的選擇比的微影用阻劑下層膜。又,還可對如此般的阻劑下層膜賦予抗反射性能,使其兼具以往的抗反射膜的機能。
另一方面,為了得到微細的阻劑圖型,於阻劑下層膜乾式蝕刻時已開始使用阻劑圖型與阻劑下層膜為較阻劑顯影時的圖型寬更細之製程。作為如此般製程用的阻劑下層膜,與以往的高蝕刻率抗反射膜不同,需要是具有與阻劑相近的乾式蝕刻速度的選擇比的阻劑下層膜。又,還可對如此般的阻劑下層膜賦予抗反射性能,使其兼具以往的抗反射膜的機能。
在本發明中,在基板上使本發明之阻劑下層膜成膜之後直接在阻劑下層膜上塗佈阻劑,或可因應所需地使一層至數層塗膜材料成膜在阻劑下層膜上然後塗佈阻劑。藉此,即使是在阻劑的圖型寬變窄,為了防止圖型倒塌而被覆阻劑薄層的情況,藉由選擇適當的蝕刻氣體,也能夠進行基板的加工。
亦即,可經由下述步驟來製造半導體裝置:由阻劑下層膜形成組成物在半導體基板上形成阻劑下層膜之步驟、在其上方形成由含有矽成分等的塗膜材料所產生的硬遮罩或由蒸鍍所產生的硬遮罩(例如氮氧化矽)之步驟、進而在其上方形成阻劑膜之步驟、藉由光或電子束之照射與顯影來形成阻劑圖型之步驟、藉由所形成之阻劑圖型以鹵素系氣體來蝕刻該硬遮罩之步驟、藉由經圖型化之硬遮罩以氧系氣體或氫系氣體來蝕刻該阻劑下層膜之步
驟、及藉由經圖型化之阻劑下層膜以鹵素系氣體來加工半導體基板之步驟。
本發明之阻劑下層膜形成組成物係塗佈於基板上並燒成時,藉由聚合物之熱回流而填充至形成於基板上的圖型內。本發明中藉由將一般具有降低聚合物之玻璃轉移溫度(Tg)之作用的長鏈烷基導入至該阻劑下層膜形成組成物中之主要樹脂骨架,而可提高熱回流性,並提升對圖型之填充性。因而,無論基板上的開放區域(非圖型區域)、或DENSE(密)及ISO(粗)之圖型區域,皆可形成平坦之膜,因此可同時滿足對圖型之填充性能、與填充後之平坦化性能,而可形成優異的平坦化膜。
本發明之微影用阻劑下層膜形成組成物,在考慮到作為抗反射膜的效果的情況下,吸光部位是被設置在骨架中,因此在加熱乾燥時,光阻劑中不會有擴散物,而且吸光部位具有夠高的吸光性能,因此防止光線反射的效果高。
本發明之微影用阻劑下層膜形成組成物的熱安定性高,可防止燒成時的分解物造成上層膜的污染,而且在進行燒成步驟時可具有充足的溫度裕量。
此外,由本發明之微影用阻劑下層膜所形成之膜,可依照製程條件,製成具有防止光線反射的機能以及進一步具有防止基板與光阻劑的交互作用或防止光阻劑中所使用的材料或光阻劑曝光時產生的物質對基板的不良影響的機能的膜來使用。
於100mL四頸燒瓶中置入二苯基胺(14.01g、0.083mol、東京化成工業(股)製)、2-乙基己基醛(10.65g、0.083mol、東京化成工業(股)製)、丁基賽路蘇(25g、關東化學(股)製)並添加三氟甲烷磺酸(0.37g、0.0025mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。1小時後放冷至室溫,之後添加THF(10g、關東化學(股)製)來稀釋後使再沈澱於甲醇(700g、關東化學(股)製)。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-1),以下簡稱為pDPA-EHA)23.0g。
pDPA-EHA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為5200,多分散度Mw/Mn為2.05。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的式(5)所表示的吡啶鎓p-酚磺酸0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成
組成物。
於100mL四頸燒瓶中置入二苯基胺(6.82g、0.040mol、東京化成工業(股)製)、3-羥基二苯基胺(7.47g、0.040mol)、2-乙基己基醛(10.34g、0.081mol、東京化成工業(股)製)、丁基賽路蘇(25g、關東化學(股)製)並添加三氟甲烷磺酸(0.36g、0.0024mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。1小時後放冷至室溫,之後添加THF(20g、關東化學(股)製)來稀釋,使用甲醇(500g、關東化學(股)製)、超純水(500g)及30%氨水(50g、關東化學(股)製)之混合溶媒來使再沈澱。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-2),以下簡稱為pDPA-HDPA-EHA)24.0g。
pDPA-HDPA-EHA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為10500,多分散度Mw/Mn為3.10。
接下來,將該所得的酚醛清漆樹脂1.00g、界面活性
劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚3.45g、丙二醇單甲基醚乙酸酯8.06g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入二苯基胺(14.85g、0.088mol、東京化成工業(股)製)、1,1,1-參(4-羥基苯基)乙烷(8.96g、0.029mol)、2-乙基己基醛(15.01g、0.117mol、東京化成工業(股)製)、丙二醇單甲基醚乙酸酯(41g、關東化學(股)製)並添加甲烷磺酸(2.25g、0.023mol、東京化成工業(股)製)後進行攪拌,昇溫至130℃使溶解並開始聚合。19小時後放冷至室溫,之後添加丙二醇單甲基醚乙酸酯(55g、關東化學(股)製)來稀釋,使用甲醇(1900g、關東化學(股)製)、超純水(800g)之混合溶媒來使再沈澱。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-3),以下簡稱為pDPA-THPE-EHA)29.4g。
pDPA-THPE-EHA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為4200,多分散度Mw/Mn為1.91。
接下來,將該所得的酚醛清漆樹脂1.00g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚3.45g、
丙二醇單甲基醚乙酸酯8.06g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入N-苯基-1-萘基胺(14.57g、0.066mol、東京化成工業(股)製)、2-乙基己基醛(8.49g、0.066mol、東京化成工業(股)製)、丁基賽路蘇(25g、關東化學(股)製)並添加三氟甲烷磺酸(2.06g、0.0014mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。30分鐘後放冷至室溫,之後添加THF(10g、關東化學(股)製)來稀釋後使再沈澱於甲醇(700g、關東化學(股)製)。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-4),以下簡稱為pNP1NA-EHA)15.0g。
pNP1NA-EHA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為2100,多分散度Mw/Mn為1.39。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的p-酚磺酸吡啶鹽0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入N-苯基-2-萘基胺(14.53g、0.066mol、東京化成工業(股)製)、2-乙基己基醛(8.50g、0.066mol、東京化成工業(股)製)、丁基賽路蘇(25g、關東化學(股)製)並添加三氟甲烷磺酸(2.00g、0.0013mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。6小時後放冷至室溫,之後添加THF(10g、關東化學(股)製)來稀釋後使再沈澱於甲醇(700g、關東化學(股)製)。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-5),以下簡稱為pNP2NA-EHA)19.0g。
pNP2NA-EHA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為1300,多分散度Mw/Mn為1.36。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的p-酚磺酸吡啶鹽0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入N-苯基-1-萘基胺(15.69g、0.072mol、東京化成工業(股)製)、2-乙基丁基酸(7.20g、0.072mol、東京化成工業(股)製)、丁基賽路蘇(25g、關東化學(股)製)並添加三氟甲烷磺酸(2.17g、0.0014mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。30分鐘後放冷至室溫,之後添加THF(10g、關東化學(股)製)來稀釋後使再沈澱於甲醇(700g、關東化學(股)製)。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-6),以下簡稱為pNP1NA-EBA)15.5g。
pNP1NA-EBA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為2200,多分散度Mw/Mn為1.62。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的p-酚磺酸吡啶鹽0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入N-苯基-1-萘基胺(15.74g、0.072mol、東京化成工業(股)製)、2-甲基
戊醛(7.17g、0.072mol、東京化成工業(股)製)、丁基賽路蘇(25g、關東化學(股)製)並添加三氟甲烷磺酸(2.15g、0.0014mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。30分鐘後放冷至室溫,之後添加THF(10g、關東化學(股)製)來稀釋後使再沈澱於甲醇(700g、關東化學(股)製)。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-7),以下簡稱為pNP1NA-MVA)17.7g。
pNP1NA-MVA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為3200,多分散度Mw/Mn為1.92。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的p-酚磺酸吡啶鹽0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
於200mL四頸燒瓶中置入二苯基胺(30.23g、0.179mol、東京化成工業(股)製)、2-甲基丁基醛(19.20g、0.223mol、東京化成工業(股)製)、PGMEA(50g、關東化學(股)製)並添加甲烷磺酸(0.53g、
0.0055mol、東京化成工業(股)製)後進行攪拌,昇溫至120℃使溶解並開始聚合。1小時30分鐘後放冷至室溫,之後將反應溶液再沈澱於甲醇(1500g、關東化學(股)製)。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-8),以下簡稱為pDPA-MBA)37.8g。
pDPA-MBA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為2900,多分散度Mw/Mn為1.95。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的p-酚磺酸吡啶鹽0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
於200mL四頸燒瓶中置入二苯基胺(32.45g、0.192mol、東京化成工業(股)製)、異丁基醛(17.26g、0.239mol、東京化成工業(股)製)、PGMEA(50g、關東化學(股)製)並添加甲烷磺酸(0.29g、0.0030mol、東京化成工業(股)製)後進行攪拌,昇溫至120℃使溶解並開始聚合。1小時30分鐘後放冷至室溫,之後添加THF(20g、關東化學(股)製)來稀釋後
使再沈澱於甲醇(1400g、關東化學(股)製)。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-9),以下簡稱為pDPA-IBA)29.4g。
pDPA-IBA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為5600,多分散度Mw/Mn為2.10。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的p-酚磺酸吡啶鹽0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入N-苯基-1-萘基胺(21.30g、0.097mol、東京化成工業(股)製)、戊醛(8.38g、0.097mol)、丁基賽路蘇(8.0g、關東化學(股)製)並添加三氟甲烷磺酸(2.36g、0.016mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。4小時後放冷至室溫,之後添加丁基賽路蘇(12g、關東化學(股)製)來稀釋,將反應溶液使用甲醇(400g、關東化學(股)製)來再沈澱。將所得之沈澱物過濾,使用減壓乾燥機以70℃乾燥24小時,得到作為
目的之聚合物(相當於式(2-10),以下簡稱為pNP1NA-VA)12.3g。
pNP1NA-VA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為1000,多分散度Mw/Mn為1.32。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的p-酚磺酸吡啶鹽0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚5.08g、丙二醇單甲基醚乙酸酯11.85g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入N-苯基-1-萘基胺(23.26g、0.106mol、東京化成工業(股)製)、n-丙基醛(6.20g、0.107mol)、丁基賽路蘇(8.0g、關東化學(股)製)並添加三氟甲烷磺酸(2.56g、0.017mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。4小時後放冷至室溫,之後添加丁基賽路蘇(18g、關東化學(股)製)來稀釋,將反應溶液使用甲醇(400g、關東化學(股)製)來再沈澱。將所得之沈澱物過濾,使用減壓乾燥機以70℃乾燥24小時,得到作為目的之聚合物(相當於式(2-11),以下簡稱為pNP1NA-PrA)21.2g。
NP1NA-PrA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為1000,多分散度Mw/Mn為1.20。
接下來,將該所得的NP1NA-PrA酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的p-酚磺酸吡啶鹽0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚6.77g、丙二醇單甲基醚乙酸酯10.16g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入3-羥基二苯基胺(14.83g、0.080mol、東京化成工業(股)製)、2-乙基己基醛(10.21g、0.080mol、東京化成工業(股)製)、丁基賽路蘇(25g、關東化學(股)製)並添加三氟甲烷磺酸(0.072g、0.0005mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。1小時後放冷至室溫,之後添加THF(20g、關東化學(股)製)來稀釋,使用甲醇(500g、關東化學(股)製)、超純水(500g)及30%氨水(50g、關東化學(股)製)之混合溶媒來使再沈澱。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-12),以下簡稱為pHDPA-EHA)17.0g。
pHDPA-EHA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為6200,多分散度Mw/Mn為3.17。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的式(5)所表示的吡啶鎓p-酚磺酸0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入N,N’-二苯基乙二胺(11.57g、0.055mol、東京化成工業(股)製)、2-乙基己基醛(8.34g、0.068mol、東京化成工業(股)製)、丁基賽路蘇(20g、關東化學(股)製)並添加三氟甲烷磺酸(0.11g、0.0007mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。4小時後放冷至室溫,之後使用甲醇(650g、關東化學(股)製)及30%氨水(50g、關東化學(股)製)之混合溶媒來使再沈澱。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-13),以下簡稱為pDPEDA-EHA)15.0g。
pDPEDA-EHA藉由GPC以聚苯乙烯換算測得的重量
平均分子量Mw為2200,多分散度Mw/Mn為1.83。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的式(5)所表示的吡啶鎓p-酚磺酸0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入2,2’-聯苯(14.15g、0.076mol、東京化成工業(股)製)、2-乙基己基醛(9.73g、0.076mol、東京化成工業(股)製)、丁基賽路蘇(25g、關東化學(股)製)並添加三氟甲烷磺酸(1.16g、0.0077mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。24小時後放冷至室溫,之後使用超純水(300g)及30%氨水(20g、關東化學(股)製)之混合溶媒來使再沈澱。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-14),以下簡稱為pBPOH-EHA)13.5g。
pBPOH-EHA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為2500,多分散度Mw/Mn為3.15。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的式(5)所表示的吡啶鎓p-酚磺酸0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
於100mL四頸燒瓶中置入N,N’-二苯基-1,4-苯二胺(16.24g、0.062mol、東京化成工業(股)製)、2-乙基己基醛(8.00g、0.062mol、東京化成工業(股)製)、丁基賽路蘇(25g、關東化學(股)製)並添加甲烷磺酸(1.21g、0.013mol、東京化成工業(股)製)後進行攪拌,昇溫至120℃使溶解並開始聚合。3小時後放冷至室溫,之後使再沈澱於甲醇(700g、關東化學(股)製)。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(2-15),以下簡稱為pDPPDA-EHA)11.4g。
pDPPDA-EHA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為4200,多分散度Mw/Mn為1.97。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-
BP、本州化學工業(股)製)0.25g、作為交聯觸媒的式(5)所表示的吡啶鎓p-酚磺酸0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
於300mL四頸燒瓶中置入二苯基胺(24.26g、0.143mol、東京化成工業(股)製)、苯甲醛(15.24g、0.144mol、東京化成工業(股)製)、丁基賽路蘇(160g、關東化學(股)製)並添加對甲苯磺酸(0.54g、0.0028mol、東京化成工業(股)製)後進行攪拌,昇溫至150℃使溶解並開始聚合。15小時後放冷至室溫,之後添加THF(30g、關東化學(股)製)來稀釋,將反應溶液使用甲醇(1400g、關東化學(股)製)來再沈澱。將所得之沈澱物過濾,使用減壓乾燥機以80℃乾燥24小時,得到作為目的之聚合物(相當於式(6),以下簡稱為pDPA-BA)15.4g。
pDPA-BA藉由GPC以聚苯乙烯換算測得的重量平均分子量Mw為6100,多分散度Mw/Mn為2.21。
接下來,將該所得的酚醛清漆樹脂1.00g、作為交聯劑的3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP、本州化學工業(股)製)0.25g、作為交聯觸媒的p-
酚磺酸吡啶鹽0.025g、界面活性劑(DIC(股)製、品名:MegaFace〔商品名〕R-30N、氟系界面活性劑)0.001g溶解於丙二醇單甲基醚4.42g、丙二醇單甲基醚乙酸酯10.30g中,來調製阻劑下層膜形成組成物。
將實施例1~實施例15及比較例1所調製而成的阻劑下層膜形成組成物分別塗佈至矽晶圓上,在加熱板上加熱來形成阻劑下層膜。燒成條件為,對於實施例1、實施例4、實施例6、實施例7、實施例8、實施例9、實施例12、實施例14及實施例15所調製而成的阻劑下層膜形成組成物以215℃;實施例5、實施例10、實施例11及比較例1之組成物以250℃;實施例2之組成物以300℃;實施例3之組成物以340℃;實施例13之組成物以350℃,分別加熱1分鐘。測定該等的阻劑下層膜於193nm時之折射率與衰減係數。
折射率與衰減係數之測定為使用WOOLLAM日本(股)製橢圓偏光儀(VUV-VASE)。
又相同地,將實施例1~實施例15及比較例1所調
製而成的阻劑下層膜形成組成物分別塗佈至矽晶圓上,與上述燒成條件為相同地來形成分別的阻劑下層膜,將前述所得之阻劑下層膜、與由住友化學(股)製阻劑溶液(製品名:SUMIRESIST PAR855)所得之阻劑膜分別來進行乾式蝕刻速度之比較。乾式蝕刻速度之測定為使用SAMUKO(股)製乾式蝕刻裝置(RIE-10NR),測定對CF4氣體的乾式蝕刻速度。
將阻劑下層膜之折射率(n值)、衰減係數(k值)、乾式蝕刻速度之比(乾式蝕刻速度的選擇比)表示於表1。
由表1之結果可得知,藉由本發明之阻劑下層膜形成組成物所得之阻劑下層膜係具有適當的抗反射效果。然後,在藉由本發明之阻劑下層膜形成組成物所得之阻劑下層膜之上層塗佈阻劑膜並行曝光與顯影,形成阻劑圖型後,依據該阻劑圖型以蝕刻氣體等進行乾式蝕刻來進行基板之加工時,相較於阻劑膜而言,本發明之阻劑下層膜係具有較大的乾式蝕刻速度,故可進行基板之加工。
作為段差被覆性之評估,對於200nm膜厚的SiO2基
板中,進行形成有溝槽寬50nm、間距100nm的稠密圖型區域(DENSE)、與未形成圖型的開放區域(OPEN)之被覆膜厚之比較。將實施例1至實施例15及比較例1的阻劑下層膜形成組成物塗佈至上述基板上後,實施例1、實施例4、實施例6、實施例7、實施例8、實施例9、實施例12、實施例14及實施例15為以215℃燒成1分鐘,又,實施例5、實施例10、實施例11及比較例1為以250℃、實施例2為以300℃、實施例3為以340℃、實施例13為以350℃來分別燒成1分鐘,使膜厚成為150nm之方式進行調整。該基板之段差被覆性為使用Hitachi High-Technologies(股)製掃瞄型電子顯微鏡(S-4800)進行觀察,以測定段差基板之稠密區域(圖型部)與開放區域(未形成圖型部)之膜厚差(稠密區域與開放區域之塗佈段差,亦稱為Bias)之方式來評估平坦化性。將各區域之膜厚與塗佈段差之值表示於表2。平坦化性評估之Bias之值越小時,其平坦化性越高。
比較對段差基板之被覆性之結果可得知,相較於比較例1之結果,實施例1至實施例15之結果為圖型區域與開放區域之塗佈段差為更小,因而由實施例1至實施例15的阻劑下層膜形成組成物所得之阻劑下層膜之平坦化性可稱得上是良好。
以藉由將本發明之阻劑下層膜形成組成物塗佈至半導體基板上並燒成來得到阻劑下層膜之形成方法時,該基板之具有段差之部份與未具有段差之部份之塗佈段差為3至73nm、或3至60nm、或3至30nm,可得到良好的平坦化性。
本發明之阻劑下層膜形成組成物,藉由塗佈至基板後、燒成步驟而可展現出高的回流性,即使是在具有段差之基板上亦可平坦地塗佈,可形成平坦之膜。又,具有適當的抗反射效果、相對於阻劑膜具有較大的乾式蝕刻速度,故可進行基板之加工,因而適合作為阻劑下層膜形成組成物使用。
Claims (8)
- 如請求項1之阻劑下層膜形成組成物,其中,進而包含酸及/或酸產生劑。
- 如請求項1或2之阻劑下層膜形成組成物,其中,進而包含交聯劑。
- 一種阻劑下層膜之形成方法,其係藉由將請求項1至請求項3中任一項之阻劑下層膜形成組成物塗佈至具有段差之半導體基板上並燒成,而該基板之具有段差之部份與未具有段差之部份之塗面段差為3至73nm。
- 一種半導體之製造中所使用的阻劑圖型之形成方 法,其係包含將請求項1至請求項3中任一項之阻劑下層膜形成組成物塗佈至半導體基板上並燒成來形成下層膜之步驟。
- 一種半導體裝置之製造方法,其係包含:由請求項1至請求項3中任一項之阻劑下層膜形成組成物在半導體基板上形成下層膜之步驟、在其上方形成阻劑膜之步驟、藉由光或電子束之照射與顯影來形成阻劑圖型之步驟、藉由所形成之阻劑圖型來蝕刻該下層膜之步驟、及藉由經圖型化之下層膜來加工半導體基板之步驟。
- 一種半導體裝置之製造方法,其係包含:由請求項1至請求項3中任一項之阻劑下層膜形成組成物在半導體基板上形成下層膜之步驟、在其上方形成硬遮罩之步驟、進而在其上方形成阻劑膜之步驟、藉由光或電子束之照射與顯影來形成阻劑圖型之步驟、藉由所形成之阻劑圖型來蝕刻該硬遮罩之步驟、藉由經圖型化之硬遮罩來蝕刻該下層膜之步驟、及藉由經圖型化之下層膜來加工半導體基板之步驟。
- 如請求項7之製造方法,其中,硬遮罩係藉由無機物之蒸鍍所形成者。
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108292098B (zh) | 2015-12-01 | 2022-06-17 | 日产化学工业株式会社 | 包含吲哚并咔唑酚醛清漆树脂的抗蚀剂下层膜形成用组合物 |
US11300879B2 (en) * | 2016-09-01 | 2022-04-12 | Nissan Chemical Corporation | Resist underlayer film forming composition containing triaryldiamine-containing novolac resin |
CN115718406A (zh) * | 2016-11-11 | 2023-02-28 | 住友电木株式会社 | 抗蚀剂形成用感光性树脂组合物、树脂膜、固化膜和半导体装置 |
KR102568212B1 (ko) | 2017-06-23 | 2023-08-18 | 닛산 가가쿠 가부시키가이샤 | 평탄화성이 개선된 레지스트 하층막 형성 조성물 |
CN110832397B (zh) * | 2017-07-14 | 2023-12-15 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物、抗蚀剂下层膜、及抗蚀剂图案的形成方法 |
JP6726142B2 (ja) * | 2017-08-28 | 2020-07-22 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 |
KR102389260B1 (ko) * | 2017-11-10 | 2022-04-20 | 동우 화인켐 주식회사 | 하드마스크용 조성물 |
KR20200123117A (ko) * | 2018-02-20 | 2020-10-28 | 닛산 가가쿠 가부시키가이샤 | 방향족 비닐 화합물이 부가된 트리아릴디아민함유노볼락 수지를 포함하는 레지스트 하층막 형성 조성물 |
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JP2022025161A (ja) * | 2018-12-11 | 2022-02-10 | 日産化学株式会社 | イオン液体を含むレジスト下層膜形成組成物 |
KR20210113990A (ko) * | 2019-01-11 | 2021-09-17 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 막형성용 조성물, 레지스트 조성물, 감방사선성 조성물, 아모퍼스막의 제조방법, 레지스트 패턴 형성방법, 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막의 제조방법 및 회로패턴 형성방법 |
WO2020162183A1 (ja) * | 2019-02-07 | 2020-08-13 | 三井化学株式会社 | 下層膜形成用材料、レジスト下層膜および積層体 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1890917A (en) * | 1932-05-16 | 1932-12-13 | Goodrich Co B F | Rubber composition and method of preserving rubber |
TW201033255A (en) * | 2009-01-09 | 2010-09-16 | Showa Highpolymer | Novolac resin and method for producing the same |
TW201235788A (en) * | 2010-11-01 | 2012-09-01 | Shinetsu Chemical Co | Resist underlayer film composition and patterning process using the same |
TW201329622A (zh) * | 2011-12-09 | 2013-07-16 | Asahi Kasei E Materials Corp | 感光性樹脂組合物、硬化浮凸圖案之製造方法、半導體裝置及顯示體裝置 |
US20140235059A1 (en) * | 2011-09-29 | 2014-08-21 | Nissan Chemical Industries, Ltd | Diarylamine novolac resin |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4013575C2 (de) * | 1990-04-27 | 1994-08-11 | Basf Ag | Verfahren zur Herstellung negativer Reliefkopien |
JP3182823B2 (ja) * | 1991-12-27 | 2001-07-03 | 住友化学工業株式会社 | ポジ型レジスト組成物 |
JPH05249666A (ja) * | 1992-03-05 | 1993-09-28 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
JPH05323604A (ja) * | 1992-05-27 | 1993-12-07 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
JPH05323605A (ja) * | 1992-05-27 | 1993-12-07 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
JP2009069754A (ja) * | 2007-09-18 | 2009-04-02 | Konica Minolta Medical & Graphic Inc | ポジ型感光性平版印刷版材料およびポジ型平版印刷版の作製方法 |
WO2009119201A1 (ja) * | 2008-03-28 | 2009-10-01 | Jsr株式会社 | レジスト下層膜及びレジスト下層膜形成用組成物並びにレジスト下層膜形成方法 |
JP5266299B2 (ja) * | 2010-12-01 | 2013-08-21 | 信越化学工業株式会社 | レジスト下層膜材料及びこれを用いたパターン形成方法 |
WO2012077640A1 (ja) | 2010-12-09 | 2012-06-14 | 日産化学工業株式会社 | 水酸基含有カルバゾールノボラック樹脂を含むレジスト下層膜形成組成物 |
US9110373B2 (en) * | 2011-06-03 | 2015-08-18 | Mitsubishi Gas Chemical Company, Inc. | Phenolic resin and material for forming underlayer film for lithography |
KR102072490B1 (ko) * | 2012-03-27 | 2020-02-03 | 닛산 가가쿠 가부시키가이샤 | 페닐인돌 함유 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물 |
KR102276783B1 (ko) * | 2013-06-26 | 2021-07-14 | 닛산 가가쿠 가부시키가이샤 | 치환된 가교성 화합물을 포함하는 레지스트 하층막 형성 조성물 |
KR102327785B1 (ko) | 2013-12-26 | 2021-11-17 | 닛산 가가쿠 가부시키가이샤 | 제2 아미노기를 갖는 노볼락폴리머를 포함하는 레지스트 하층막 형성 조성물 |
KR102367638B1 (ko) | 2014-03-31 | 2022-02-28 | 닛산 가가쿠 가부시키가이샤 | 방향족 비닐화합물이 부가된 노볼락수지를 포함하는 레지스트 하층막 형성 조성물 |
-
2016
- 2016-10-14 CN CN201680060001.2A patent/CN108139674B/zh active Active
- 2016-10-14 US US15/769,525 patent/US20180314154A1/en active Pending
- 2016-10-14 JP JP2017546531A patent/JP7176844B2/ja active Active
- 2016-10-14 WO PCT/JP2016/080575 patent/WO2017069063A1/ja active Application Filing
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-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1890917A (en) * | 1932-05-16 | 1932-12-13 | Goodrich Co B F | Rubber composition and method of preserving rubber |
TW201033255A (en) * | 2009-01-09 | 2010-09-16 | Showa Highpolymer | Novolac resin and method for producing the same |
TW201235788A (en) * | 2010-11-01 | 2012-09-01 | Shinetsu Chemical Co | Resist underlayer film composition and patterning process using the same |
US20140235059A1 (en) * | 2011-09-29 | 2014-08-21 | Nissan Chemical Industries, Ltd | Diarylamine novolac resin |
TW201329622A (zh) * | 2011-12-09 | 2013-07-16 | Asahi Kasei E Materials Corp | 感光性樹脂組合物、硬化浮凸圖案之製造方法、半導體裝置及顯示體裝置 |
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