TWI705306B - 含有具封端異氰酸酯構造之聚合物的微影用阻劑下層膜形成組成物 - Google Patents
含有具封端異氰酸酯構造之聚合物的微影用阻劑下層膜形成組成物 Download PDFInfo
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- TWI705306B TWI705306B TW104116259A TW104116259A TWI705306B TW I705306 B TWI705306 B TW I705306B TW 104116259 A TW104116259 A TW 104116259A TW 104116259 A TW104116259 A TW 104116259A TW I705306 B TWI705306 B TW I705306B
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- underlayer film
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- HBCQSNAFLVXVAY-UHFFFAOYSA-N pyrimidine-2-thiol Chemical compound SC1=NC=CC=N1 HBCQSNAFLVXVAY-UHFFFAOYSA-N 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 239000001589 sorbitan tristearate Substances 0.000 description 1
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- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical class C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
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Classifications
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- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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Abstract
Description
本發明乃是關於半導體基板加工時有效的微影用阻劑下層膜形成組成物,與使用該阻劑下層膜形成組成物之阻劑圖型形成法,及半導體裝置之製造方法。
過去以來在半導體裝置之製造中,即已施行有藉由使用光阻劑組成物之微影所為之微細加工。前述微細加工乃是一種在矽晶圓等之被加工基板上形成光阻劑組成物之薄膜,於其上乃透過經描繪有半導體裝置之圖型的遮罩圖型,照射紫外線等之活性光線並顯像,將所得之光阻劑圖型作為保護膜來蝕刻處理矽晶圓等之被加工基板之加工法。然而,近年來,半導體裝置的高積體度化不斷地進展,所使用之活性光線也有自KrF準分子雷射(248nm)朝向ArF準分子雷射(193nm)之短波長化的傾向。伴隨於此,來自活性光線基板的散射或駐波的影響大有問題。
因此,有關於在光阻劑與被加工基板之間設置抗反射膜(BottomAnti-Reflective Coating、BARC)之方法被廣泛地檢討至今。例如,已揭示含有具丙烯醯胺構造之聚合物的感光性阻劑下層膜形成用組成物(參考專利文獻1)。
已揭示含有具羥基丙烯醯胺單位構造之聚合物的阻劑下層膜形成用組成物(參考專利文獻2)。
已揭示包含具羥基伸烷基甲基丙烯醯胺之單位構造與芳香族伸烷基甲基丙烯酸酯之單位構造之聚合物的抗反射膜形成用組成物(專利文獻3參照)。
今後,阻劑圖型的微細化若繼續進展,會發生解像度的問題或阻劑圖型於顯像後倒塌之問題,於是要求阻劑之薄膜化。因此,在基板加工上難以獲得充分的阻劑圖型膜厚,而不只是阻劑圖型,對於在阻劑與欲加工的半導體基板之間所作成的阻劑下層膜,也必須要有作為基板加工時之遮罩機能的製程。如此的製程用之阻劑下層膜方面,與以往高蝕刻率性(蝕刻速度快者)阻劑下層膜不同,乃被要求要具有接近阻劑之乾式蝕刻速度選擇比的微影用阻劑下層膜、具有較阻劑小之乾式蝕刻速度選擇比的微影用阻劑下層膜或者是具有較半導體基板小之乾式蝕刻速度選擇比的微影用阻劑下層膜。
已揭示一種具有丙烯醯胺構造且可以鹼水溶液去除的有機硬遮罩層形成用組成物(參考專利文獻4)。
已揭示一種使用具封端異氰酸酯基之聚合物的半導體
裝置之製造方法(參考專利文獻5)。
[專利文獻1]國際申請號WO2005/111724
[專利文獻2]日本特開2009-025670
[專利文獻3]日本特開2001-027810
[專利文獻4]國際申請號WO2012/161126
[專利文獻5]際申請號WO2014/007079
本發明之目的在於提供一種用於半導體裝置製造之微影製程的阻劑下層膜形成組成物。又本發明之目的在於提供一種不與無機硬遮罩層發生層混合、可得優異的阻劑圖型、具有接近阻劑之乾式蝕刻速度選擇比的微影用阻劑下層膜、具有較阻劑小之乾式蝕刻速度選擇比的微影用阻劑下層膜,或者具有較半導體基板小之乾式蝕刻速度選擇比的微影用阻劑下層膜。又,本發明之目的在於將248nm、193nm、157nm等波長之照射光使用於微細加工時,賦予阻劑下層膜有效地吸收來自基板的反射光之性能。再者,本發明之目的在於提供一種使用阻劑下層膜形成組成物之阻劑圖型的形成方法。然後,在於提供一種可自上層圖型轉印或於基板之加工時進行乾式蝕刻,基板加
工後可以鹼水溶液去除之用以形成阻劑下層膜的阻劑下層膜形成組成物。
本發明之第1觀點係一種微影用阻劑下層膜形成組成物,其係包含具有丙烯醯胺構造或丙烯酸酯構造之聚合物(A)、具封端異氰酸酯構造之聚合物(B)與溶劑(C)、第2觀點係如第1觀點之阻劑下層膜形成組成物,其中,上述聚合物(A)係含以式(1)所示之單位構造的聚合物:
(式(1)中,R1表示氫原子或甲基、X1表示NH基或氧原子、R2表示芳香族環、R3表示羥基或羧基)、第3觀點係如第2觀點之阻劑下層膜形成組成物,其中,式(1)中,R2為苯環、第4觀點係如第1觀點~第3觀點之任一記載的阻劑下層
膜形成組成物,其中,上述聚合物(B)係含以式(2)所示之單位構造的聚合物:
(式(2)中,R4表示氫原子或甲基、R5表示單鍵或伸烷基、R6表示封端異氰酸酯基)、第5觀點係如第1觀點~第4觀點之任一記載的阻劑下層膜形成組成物,其中,聚合物(A)與聚合物(B)係使羥基或羧基與封端異氰酸酯基以莫耳比1:0.005~1.0之比例所含者、第6觀點係如第1觀點~第5觀點之任一記載的阻劑下層膜形成組成物,其中,進一步含交聯觸媒、第7觀點係一種半導體裝置之製造方法,其係包含:於半導體基板上由第1觀點~第6觀點之任一記載的阻劑下層膜形成組成物形成阻劑下層膜之步驟、於該阻劑下層膜上形成阻劑膜之步驟、藉由光或電子線之照射與顯像而於阻劑膜上形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半
導體基板之步驟、及第8觀點係一種半導體裝置之製造方法,其係包含:於半導體基板上由第1觀點~第6觀點之任一記載的阻劑下層膜形成組成物形成阻劑下層膜之步驟、於該阻劑下層膜上形成無機硬遮罩層之步驟、進一步於無機硬遮罩層上形成阻劑膜之步驟、藉由光或電子線之照射與顯像而於阻劑膜上形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻無機硬遮罩層之步驟、藉由經圖型化之無機硬遮罩層蝕刻阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
由本發明之阻劑下層膜形成組成物所形成之阻劑下層膜,不會與位於其上層之無機硬遮罩層發生層混合,且可形成良好的阻劑之圖型形狀。
又,藉由本發明之阻劑下層膜形成組成物,係可提供具有與阻劑接近的乾式蝕刻速度之選擇比、較阻劑小的乾式蝕刻速度之選擇比或是較半導體基板小的乾式蝕刻速度之選擇比的優異的阻劑下層膜。
因此,由本發明之阻劑下層膜形成組成物所得之阻劑下層膜,係可將被轉印於上層之無機硬遮罩層的阻劑圖型以乾式蝕刻轉印於阻劑下層膜。再者,被轉印於阻劑下層膜之阻劑圖型係可藉由乾式蝕刻來進行半導體基板的加工。
甚至,本發明之阻劑下層膜形成組成物,係可藉此賦予所形成之阻劑下層膜有效地抑制來自基板的反射之性能,該阻劑下層膜可同時具有作為曝光光之抗反射膜的效果。
所以,由本發明之微影用阻劑下層膜形成組成物所形成之阻劑下層膜,係可用作為平坦化膜、阻劑層之防污染膜、具有乾式蝕刻選擇性之膜。藉此,可使半導體製造的微影製程中之阻劑圖型形成得以容易地、精度佳地實施。
又,本發明之微影用阻劑下層膜形成組成物,因熱安定性高,由此所形成之阻劑下層膜,可防止起因於用以形成無機硬遮罩層之真空蒸鍍時或燒成時的分解物導致的對上層膜之污染,又,對燒成步驟的溫度裕度具有餘裕。
再者,由本發明之微影用阻劑下層膜形成組成物所形成之阻劑下層膜,在加工半導體基板之後,可藉由鹼水溶液去除。
本發明係包含具有丙烯醯胺構造或丙烯酸酯構造之聚合物(A)、具封端異氰酸酯構造之聚合物(B)與溶劑(C)之微影用阻劑下層膜形成組成物。
本發明之阻劑下層膜形成組成物可因應需要而含有酸產生劑、界面活性劑等之添加劑。此組成物之固形分為0.1~70質量%或0.1~60質量%。固形分係從阻劑下層膜
形成組成物去除溶劑(C)所殘存的成分之含有比例。
固形分中,係可使上述聚合物(A)及聚合物(B)之合計量以1~100質量%、或1~99質量%、或50~98質量%之比例含有。
上述聚合物(A)之重量平均分子量,例如可為1000~1000000、或1000~100000、或1000~50000之範圍。
聚合物(A)較佳為含有式(1)所示之單位構造,式(1)中,R1表示氫原子或甲基、X1表示NH基或氧原子、R2表示芳香族環、R3表示羥基或羧基。
聚合物(B)較佳為含有式(2)所示之單位構造,式(2)中,R4表示氫原子或甲基、R5表示單鍵或伸烷基、R6表示封端異氰酸酯基。
上述聚合物(B)之重量平均分子量,例如可為1000~1000000、或1000~100000、或1000~50000之範圍。
本發明中,聚合物(A)與聚合物(B)係可以羥基或羧基與封端異氰酸酯基之莫耳比成為1:0.005~1.0之比例含有。
前述芳香族環方面,可舉出苯環、萘環、蒽環、聯苯環等,尤以苯環為佳。
前述伸烷基方面,可舉出對應於以下烷基之伸烷基,烷基方面,可例示碳數1~10之烷基。可舉例如甲基、乙基、n-丙基、i-丙基、環丙基、n-丁基、i-丁基、s-丁基、t-丁基、環丁基、1-甲基-環丙基、2-甲基-環丙基、n-戊基、1-甲基-n-丁基、2-甲基-n-丁基、3-甲基-n-
丁基、1,1-二甲基-n-丙基、1,2-二甲基-n-丙基、2,2-二甲基-n-丙基、1-乙基-n-丙基、環戊基、1-甲基-環丁基、2-甲基-環丁基、3-甲基-環丁基、1,2-二甲基-環丙基、2,3-二甲基-環丙基、1-乙基-環丙基、2-乙基-環丙基、n-己基、1-甲基-n-戊基、2-甲基-n-戊基、3-甲基-n-戊基、4-甲基-n-戊基、1,1-二甲基-n-丁基、1,2-二甲基-n-丁基、1,3-二甲基-n-丁基、2,2-二甲基-n-丁基、2,3-二甲基-n-丁基、3,3-二甲基-n-丁基、1-乙基-n-丁基、2-乙基-n-丁基、1,1,2-三甲基-n-丙基、1,2,2-三甲基-n-丙基、1-乙基-1-甲基-n-丙基、1-乙基-2-甲基-n-丙基、環己基、1-甲基-環戊基、2-甲基-環戊基、3-甲基-環戊基、1-乙基-環丁基、2-乙基-環丁基、3-乙基-環丁基、1,2-二甲基-環丁基、1,3-二甲基-環丁基、2,2-二甲基-環丁基、2,3-二甲基-環丁基、2,4-二甲基-環丁基、3,3-二甲基-環丁基、1-n-丙基-環丙基、2-n-丙基-環丙基、1-i-丙基-環丙基、2-i-丙基-環丙基、1,2,2-三甲基-環丙基、1,2,3-三甲基-環丙基、2,2,3-三甲基-環丙基、1-乙基-2-甲基-環丙基、2-乙基-1-甲基-環丙基、2-乙基-2-甲基-環丙基及2-乙基-3-甲基-環丙基等。
前述所謂封端異氰酸酯基,係異氰酸酯基(-N=C=O)藉由適當的保護基所封端之有機基。
封端異氰酸酯基係可使異氰酸酯基與封端化劑反應而形成封端異氰酸酯基。
聚合物(A)中的羥基或羧基反應時,封端化
劑會脫離,羥基或羧基與異氰酸酯基會反應形成交聯構造。
封端化劑方面,係可與異氰酸酯反應之含活性氫的化合物,可舉例如醇、苯酚、多環苯酚、醯胺、醯亞胺、亞胺、硫醇、肟、內醯胺、含活性氫之雜環、含活性亞甲基之化合物。
作為封端化劑的醇,可舉例如碳數1~40之醇,可例示出甲醇、乙醇、丙醇、異丙醇、丁醇、戊醇、己醇、辛醇、氯乙醇、1,3-二氯-2-丙醇、t-丁醇、t-戊醇、2-乙基己醇、環己醇、月桂基醇、乙二醇、丁二醇、三羥甲基丙烷、丙三醇、乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單丁基醚、二乙二醇單甲基醚、丙二醇單甲基醚、丙二醇單乙基醚、苯甲醇等。
作為封端化劑的苯酚,可舉例如碳數6~20之苯酚類,可例示出苯酚、氯苯酚、硝基苯酚等。
作為封端化劑的苯酚衍生物,可舉例如碳數6~20之苯酚衍生物,對-t-丁基苯酚、甲酚、二甲苯酚、間苯二酚等。
作為封端化劑的多環苯酚,可舉例如碳數10~20之多環苯酚,該等是具有苯酚性羥基之芳香族縮合環,可例示出羥基萘、羥基蒽等。
作為封端化劑的醯胺,可舉例如碳數1~20之醯胺,可例示出乙醯苯胺、己烷醯胺、辛烷二醯胺、丁二醯胺、苯碸醯胺、乙烷二醯胺等。
作為封端化劑的醯亞胺,可舉例如碳數6~20之醯亞胺,可例示出環己烷二羧基醯亞胺、環六烯二羧基醯亞胺、苯二羧基醯亞胺、環丁烷二羧基醯亞胺、碳二醯亞胺等。
作為封端化劑的亞胺,可舉例如碳數1~20之亞胺,可例示出己烷-1-亞胺、2-丙烷亞胺、乙烷-1,2-亞胺等。
作為封端化劑的硫醇,可舉例如碳數1~20之硫醇,可例示出乙烷硫醇、丁烷硫醇、硫苯酚、2,3-丁烷二硫醇等。
作為封端化劑的肟,例如碳數1~20之肟,可例示出乙醯肟、甲基乙基酮肟、環己酮肟、二甲基酮肟、甲基異丁基酮肟、甲基戊基酮肟、甲醯胺肟、乙醛肟、二乙醯基單肟、二苯甲酮肟、環己烷肟等。
作為封端化劑的內醯胺,例如碳數4~20之內醯胺,可例示出ε-己內醯胺、δ-戊內醯胺、γ-丁內醯胺、β-丙基內醯胺、γ-吡咯啶酮、月桂基內醯胺等。
作為封端化劑的含活性氫之雜環化合物,例如碳數3~30之含活性氫之雜環化合物,可例示出吡咯、咪唑、吡唑、哌啶、哌嗪、嗎啉、吡啶、吲哚、吲唑、嘌呤、咔唑等。
作為封端化劑的含活性亞甲基之化合物,例如碳數3~20之含活性亞甲基之化合物,可例示出丙二酸二甲基酯、丙二酸二乙基酯、乙醯乙酸甲基酯、乙醯乙酸
乙基酯、乙醯基丙酮等。
本發明中所用的聚合物(A),其構造可例示於下。
本發明中所用的聚合物(B),其構造可例示於下。
本發明中,用以促進上述交聯反應之觸媒方面,可摻合p-甲苯磺酸、三氟甲烷磺酸、吡啶鎓p-甲苯磺酸、水楊酸、磺基水楊酸、檸檬酸、安息香酸、羥基安息香酸、萘羧酸等之酸性化合物或/及2,4,4,6-四溴環己二酮、安息香甲苯磺酸酯、2-硝基苄基甲苯磺酸酯、其他有機磺酸烷基酯等之熱酸產生劑。摻合量相對於全固形分為0.0001~20質量%、較佳為0.0005~10質量%、較佳為0.01~3質量%。
本發明之阻劑下層膜形成組成物,為了在微影步驟使其與被覆於上層的光阻劑之酸性度一致,係可添加光酸產生劑。較佳的光酸產生劑方面,可舉例如雙(4-t-丁基苯基)錪三氟甲烷磺酸鹽、三苯基鋶三氟甲烷磺酸鹽等之鎓鹽系光酸產生劑類、苯基-雙(三氯甲基)-s-三嗪等之鹵素含有化合物系光酸產生劑類、安息香甲苯磺酸
酯、N-羥基丁二醯亞胺三氟甲烷磺酸鹽等之磺酸系光酸產生劑類等。相對於全固形分,上述光酸產生劑為0.2~10質量%、較佳為0.4~5質量%。
本發明之微影用阻劑下層膜形成組成物中,除了上述以外,可視需要而添加額外的吸光劑、流變性調整劑、接著補助劑、界面活性劑等。
額外的吸光劑方面,可舉例如「工業用色素的技術與市場」(CMC出版)或「染料便覧」(有機合成化學協會編)中記載的市售之吸光劑,例如得以適用C.I.DisperseYellow1,3,4,5,7,8,13,23,31,49,50,51,54,60,64,66,68,79,82,88,90,93,102,114及124;C.I.DisperseOrange1,5,13,25,29,30,31,44,57,72及73;C.I.DisperseRed1,5,7,13,17,19,43,50,54,58,65,72,73,88,117,137,143,199及210;C.I.DisperseViolet43;C.I.DisperseBlue96;C.I.F1uorescentBrighteningAgent112,135及163;C.I.So1ventOrange2及45;C.I.SolventRed1,3,8,23,24,25,27及49;C.I.PigmentGreen10;C.I.PigmentBrown2等。上述吸光劑,相對於微影用阻劑下層膜形成組成物之全固形分,通常可以10質量%以下、較佳為5質量%以下之比例進行摻合。
流變性調整劑主要是使阻劑下層膜形成組成物之流動性向上提升,特別是在烘烤步驟中,以阻劑下層膜之膜厚均一性的提升或提高對通孔內部的阻劑下層膜形
成組成物之填充性為目的所添加。具體例方面,可舉出二甲基鄰苯二甲酸酯、二乙基鄰苯二甲酸酯、二異丁基鄰苯二甲酸酯、二己基鄰苯二甲酸酯、丁基異癸基鄰苯二甲酸酯等之苯二甲酸衍生物;二正丁基己二酸酯、二異丁基己二酸酯、二異辛基己二酸酯、辛基癸基己二酸酯等之己二酸衍生物、二正丁基馬來酸酯、二乙基馬來酸酯、二壬基馬來酸酯等之馬來酸衍生物;甲基油酸酯、丁基油酸酯、四氫糠基油酸酯等之油酸衍生物;或正丁基硬脂酸酯、甘油基硬脂酸酯等之硬脂酸衍生物。此等之流變性調整劑相對於微影用阻劑下層膜形成組成物之全固形分,通常可以未達30質量%之比例進行摻合。
接著補助劑,主要係使基板或阻劑與阻劑下層膜之密著性提升,特別是用以在顯像中阻劑不剝離為目的而添加。具體例方面,可舉出三甲基氯矽烷、二甲基乙烯基氯矽烷、甲基二苯基氯矽烷、氯甲基二甲基氯矽烷等之氯矽烷類、三甲基甲氧基矽烷、二甲基二乙氧基矽烷、甲基二甲氧基矽烷、二甲基乙烯基乙氧基矽烷、二苯基二甲氧基矽烷、苯基三乙氧基矽烷等之烷氧基矽烷類、六甲基二矽氮烷、N,N’-雙(三甲基矽烷基)脲、二甲基三甲基矽烷基胺、三甲基矽烷基咪唑等之矽氮烷類、乙烯基三氯矽烷、γ-氯丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷等之矽烷類、苯并***、苯并咪唑、吲唑、咪唑、2-巰基苯并咪唑、2-巰基苯并噻唑、2-巰基苯并噁唑、脲唑、硫脲嘧啶、巰基咪唑、
巰基嘧啶等之雜環式化合物或、1,1-二甲基脲、1,3-二甲基脲等之尿素、或硫脲化合物。此等之接著補助劑,相對於微影用阻劑下層膜形成組成物之全固形分,通常以未達5質量%、較佳為以未達2質量%之比例進行摻合。
本發明之微影用阻劑下層膜形成組成物中,為了不產生針孔或條紋等,且為了對表面不均之塗佈性進一步提升,係可摻合界面活性劑。界面活性劑方面,可舉例如聚氧乙烯月桂基醚、聚氧乙烯硬脂醯基醚、聚氧乙烯鯨蠟基醚、聚氧乙烯油醯基醚等之聚氧乙烯烷基醚類、聚氧乙烯辛基酚醚、聚氧乙烯壬基酚醚等之聚氧乙烯烷基烯丙基醚類、聚氧乙烯‧聚氧丙烯嵌段共聚物類、山梨醇酐單月桂酸酯、山梨醇酐單棕櫚酸酯、山梨醇酐單硬脂酸酯、山梨醇酐單油酸酯、山梨醇酐三油酸酯、山梨醇酐三硬脂酸酯等之山梨醇酐脂肪酸酯類、聚氧乙烯山梨醇酐單月桂酸酯、聚氧乙烯山梨醇酐單棕櫚酸酯、聚氧乙烯山梨醇酐單硬脂酸酯、聚氧乙烯山梨醇酐三油酸酯、聚氧乙烯山梨醇酐三硬脂酸酯等之聚氧乙烯山梨醇酐脂肪酸酯類等之非離子系界面活性劑、EF-Top EF301、EF303、EF352((股)Tohkem Product製、商品名)、Megafac F171、F173、R-30、R-40、R-40LM(大日本油墨(股)製、商品名)、Fluorad FC430、FC431(住友3M(股)製、商品名)、AsahiGuard AG710、Surflon S-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(股)製、商品名)等之氟系界面活性劑、有機矽氧烷聚合物
KP341(信越化學工業(股)製)等。此等之界面活性劑之摻合量,相對於本發明之微影用阻劑下層膜形成組成物之全固形分,通常為2.0質量%以下、較佳為1.0質量%以下。此等之界面活性劑可單獨添加,亦可以2種以上的組合予以添加。
本發明中,使上述之聚合物及交聯觸媒等溶解之溶劑(C)方面,可使用乙二醇單甲基醚、乙二醇單乙基醚、甲基賽路蘇乙酸酯、乙基賽路蘇乙酸酯、二乙二醇單甲基醚、二乙二醇單乙基醚、丙二醇、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚、丙二醇單乙基醚乙酸酯、丙二醇丙基醚乙酸酯、甲苯、二甲苯、甲基乙基酮、環戊酮、環己酮、2-羥基丙酸乙基酯、2-羥基-2-甲基丙酸乙基酯、乙氧基乙酸乙基酯、羥基乙酸乙基酯、2-羥基-3-甲基丁烷酸甲基酯、3-甲氧基丙酸甲基酯、3-甲氧基丙酸乙基酯、3-乙氧基丙酸乙基酯、3-乙氧基丙酸甲基酯、丙酮酸甲基酯、丙酮酸乙基酯、乙酸乙基酯、乙酸丁基酯、乳酸乙基酯、乳酸丁基酯等。此等之有機溶劑,可以單獨使用,或以2種以上之組合使用。
再者,可混合使用丙二醇單丁基醚、丙二醇單丁基醚乙酸酯等之高沸點溶劑。此等之溶劑之中,丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、乳酸乙基酯、乳酸丁基酯、及環己酮等對調平性的提升上較佳。
本發明中所用的阻劑,可使用光阻劑或電子線阻劑等。
被塗佈於由本發明之微影用阻劑下層膜形成組成物所形成之阻劑下層膜之上部的光阻劑方面,可使用負型、正型中任一者,可列舉由酚醛清漆樹脂與1,2-萘并醌二疊氮磺酸酯所成的正型光阻劑、具有可藉酸分解而使鹼溶解速度上昇之基的黏合劑與光酸產生劑所成的化學增幅型光阻劑、由鹼可溶性黏合劑與藉酸分解而使光阻劑之鹼溶解速度上昇之低分子化合物與光酸產生劑所成的化學增幅型光阻劑、由具有可藉酸分解而使鹼溶解速度上昇之基的黏合劑與藉酸分解而使光阻劑之鹼溶解速度上昇之低分子化合物與光酸產生劑所成的化學增幅型光阻劑、骨架中具有Si原子之光阻劑等,可舉例如Rohm and Haas公司製、商品名APEX-E。
又,在被塗佈於由本發明之組成物所形成之微影用阻劑下層膜之上部的電子線阻劑方面,可舉例如由在主鏈含Si-Si鍵結且末端含芳香族環之樹脂與藉由電子線的照射而產生酸之酸產生劑所成的組成物、或由被含羥基為N-羧基胺之有機基所取代之聚(p-羥基苯乙烯)與藉由電子線的照射而產生酸之酸產生劑所成的組成物等。後者之電子線阻劑組成物,乃藉由電子線照射使由酸產生劑產生的酸與聚合物側鏈之N-羧基胺氧基反應,聚合物側鏈分解為羥基並顯示鹼可溶性而溶解於鹼顯像液,形成阻劑圖型者。此藉由電子線的照射而產生酸之酸產生劑,可舉出1,1-雙[p-氯苯基]-2,2,2-三氯乙烷、1,1-雙[p-甲氧基苯基]-2,2,2-三氯乙烷、1,1-雙[p-氯苯基]-2,2-二氯乙烷、
2-氯-6-(三氯甲基)吡啶等之鹵素化有機化合物、三苯基鋶鹽、二苯基錪鹽等之鎓鹽、硝基苄基甲苯磺酸酯、二硝基苄基甲苯磺酸酯等之磺酸酯。
具有使用本發明之微影用阻劑下層膜形成組成物而形成的阻劑下層膜之阻劑,其顯像液方面,可使用氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨水等之無機鹼類、乙基胺、n-丙基胺等之第一胺類、二乙基胺、二-n-丁基胺等之第二胺類、三乙基胺、甲基二乙基胺等之第三胺類、二甲基乙醇胺、三乙醇胺等之醇胺類、四甲基銨氫氧化物、四乙基銨氫氧化物、膽鹼等之第4級銨鹽、吡咯、哌啶等之環狀胺類、等的鹼類之水溶液。再者,上述鹼類之水溶液中,亦可適當地添加異丙基醇等之醇類、非離子系等之界面活性劑予以使用。此等之中較佳的顯像液為第四級銨鹽、更佳為四甲基銨氫氧化物及膽鹼。
接著,若就本發明之阻劑圖型形成法進行說明,則精密積體電路元件之製造中所使用的基板(例如矽/二氧化矽被覆、玻璃基板、ITO基板等之透明基板)上藉由旋轉器、塗佈機等之適當塗佈方法塗佈阻劑下層膜形成組成物之後,進行烘烤而使其硬化,並作成塗佈型阻劑下層膜。在此,阻劑下層膜之膜厚方面,係以0.01~3.0μm為佳。又塗佈後進行烘烤的條件方面,係於80~400℃下0.5~120分鐘。之後於阻劑下層膜上直接地塗佈阻劑,或因應需要而將1層~數層的塗膜材料成膜於塗佈
型阻劑下層膜上之後塗佈阻劑,通過既定的遮罩來進行光或電子線之照射,藉由顯像、潤洗、乾燥,可獲得良好的阻劑圖型。視需要亦可進行光或電子線之照射後加熱(PEB:Post Exposure Bake)。然後,阻劑乃藉由前述步驟,將已經顯像除去之部分阻劑下層膜以乾式蝕刻去除,而得以於基板上形成所期望的圖型。
上述於光阻劑的曝光光,係近紫外線、遠紫外線或極端紫外線(例如,EUV)等之化學線,例如可使用248nm(KrF雷射光)、193nm(ArF雷射光)、157nm(F2雷射光)等之波長的光。光照射上,若為可自光酸產生劑產生酸之方法,在使用上並無特別限制,可以曝光量1~2000mJ/cm2、或10~1500mJ/cm2、或50~1000mJ/cm2為之。
又電子線阻劑之電子線照射,例如可使用電子線照射裝置來進行照射。
本發明中,係可經下述步驟來製造半導體裝置:於半導體基板上由本發明之阻劑下層膜形成組成物形成該阻劑下層膜之步驟、於其上形成阻劑膜之步驟、藉由光或電子線照射與顯像而形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻該阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
今後,阻劑圖型的微細化若繼續發展,會發生解像度的問題或是阻劑圖型會於顯像後倒塌之問題,並期望阻劑之薄膜化。因此,在基板加工上難以獲得充分的
阻劑圖型膜厚,所以,不只是對阻劑圖型,就連對在阻劑與欲加工之半導體基板之間所作成的阻劑下層膜,也必須有使其作為基板加工時的遮罩之機能的製程。如此的製程用之阻劑下層膜方面,被要求必須是具有與以往的高蝕刻率性阻劑下層膜不同,並具有與阻劑接近的乾式蝕刻速度之選擇比的微影用阻劑下層膜、具有較阻劑小的乾式蝕刻速度之選擇比的微影用阻劑下層膜,或者是具有較半導體基板小的乾式蝕刻速度之選擇比的微影用阻劑下層膜。又,可賦予如此的阻劑下層膜抗反射能,而得以一併具有以往的抗反射膜之機能。
另一方面,為了獲得微細的阻劑圖型,在阻劑下層膜之乾式蝕刻時,也開始使用使阻劑圖型與阻劑下層膜較阻劑顯像時的圖型寬幅變細的製程。如此的製程用之阻劑下層膜方面,乃被要求必須是具有與以往的高蝕刻率性抗反射膜不同,並具有與阻劑接近的乾式蝕刻速度之選擇比的阻劑下層膜。又,可賦予如此的阻劑下層膜抗反射能,而得以一併具有以往的抗反射膜之機能。
在使用如此的薄膜阻劑之製程上,乃重複下述行程,最終進行基板加工:將阻劑圖型以蝕刻製程轉印於其下層膜,並以將該下層膜作為遮罩來進行基板加工之製程,或是將阻劑圖型來蝕刻製程轉印於其下層膜,再使用不同的氣體組成以將已轉印至下層膜之圖型轉印至其下層膜。本發明之阻劑下層膜形成用組成物及由該組成物所形成之阻劑下層膜在此製程有效,且從本發明之組成物以
使用阻劑下層膜來加工基板時,乃是對加工基板(例如,基板上的熱氧化矽膜、氮化矽膜、聚矽膜等)充分地具有蝕刻耐性者。
本發明中,於基板上成膜本發明之阻劑下層膜後,係可於阻劑下層膜上直接塗佈阻劑,或視需要而可於阻劑下層膜上成膜1層~數層塗膜材料之後塗佈阻劑。藉此,阻劑之圖型寬幅會變狹窄,為了防止圖型倒塌,即使在薄薄地被覆阻劑的情況下,亦可藉由選擇適切的蝕刻氣體來進行基板的加工。
意即,可經由下述步驟來製造半導體裝置:於半導體基板上由本發明之阻劑下層膜形成組成物形成該阻劑下層膜之步驟、於其上形成以含矽成分等的塗膜材料所成之無機硬遮罩層之步驟、再於其上形成阻劑膜之步驟、藉由光或電子線之照射與顯像以形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻無機硬遮罩層之步驟、藉由已經圖型化之無機硬遮罩層來蝕刻該阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
於基板上由此阻劑下層膜形成組成物形成阻劑下層膜,於其上形成無機硬遮罩層,於其上形成阻劑膜,藉由曝光與顯像來形成阻劑圖型,將所形成之阻劑圖型轉印至無機硬遮罩層,將已轉印至無機硬遮罩層之阻劑圖型轉印至阻劑下層膜,並在該阻劑下層膜進行半導體基板的加工之製程中,本發明之阻劑下層膜形成組成物在以
下的點方面比較有利。此製程下,無機硬遮罩層係有藉由包含有機聚合物或無機聚合物與溶劑之塗佈型的組成物而實施的情況、藉由無機物之真空蒸鍍而實施的情況。無機物(例如,氮化氧化矽)之真空蒸鍍,雖是蒸鍍物堆積於阻劑下層膜表面,但此時阻劑下層膜表面的溫度會有上昇至400℃前後的情況。
相對於此,本發明之微影用阻劑下層膜形成組成物係因熱安定性高,由此所形成之阻劑下層膜,可防止因用以形成無機硬遮罩層之真空蒸鍍時或燒成時的分解物所導致對上層膜之污染,又,對燒成步驟的溫度裕度具有餘裕。
又,本發明之微影用阻劑下層膜形成組成物,在考慮作為抗反射膜的效果時,因光吸收部位被組入骨架中,故於加熱乾燥時不會有向光阻劑中的擴散物,又,光吸收部位因具有十分大的吸光性能,故抗反射光效果高。
再者,本發明之微影用阻劑下層膜形成組成物,可用作為膜形成材料,而該膜因製程條件而具有下述機能:防止光反射之機能,甚至是防止基板與光阻劑的相互作用之機能,或者是防止對光阻劑中所用的材料或光阻劑曝光時生成的物質對基板的壞作用之機能。
所以,由本發明之微影用阻劑下層膜形成組成物所形成之阻劑下層膜,係可用作為平坦化膜、阻劑層之防污染膜、具有乾式蝕刻選擇性之膜。藉此,得以輕易地、精度優地實施半導體製造的微影製程中之阻劑圖型形
成。
而且,加工半導體基板之後,由本發明之組成物所形成之阻劑下層膜可以鹼水溶液去除。
重量平均分子量係記載了以膠體滲透層析(GPC)所為之測定結果。
測定係使用東曹(股)製GPC裝置,且測定條件如下所示。
GPC管柱:Shodex〔註冊商標〕‧Asahipak〔註冊商標〕(昭和電工(股)製)
管柱溫度:40℃
溶劑:N,N-二甲基甲醯胺(DMF)
流量:0.6mL/分
標準試料:聚苯乙烯(東曹(股)製)
將N-(4-羥基苯基)甲基丙烯醯胺20.0g(大阪有機化學工業股份公司製)、甲基丙烯酸甲基酯(東京化成工業股份公司製)6.8g、羥基乙基丙烯酸酯(東京化成工業股份公司製)5.2g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)4.8g加入丙二醇單甲基醚147.3g中使其溶解。將此溶液滴入丙二醇單甲基醚61.4g加熱至85℃之300mL燒瓶中,滴下結束後約攪拌15小時。反應結束
後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)36.8g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)36.8g,於室溫下進行離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物的構造相當於上述式(A-2)中所示之構造。聚合物中的N-(4-羥基苯基)甲基丙烯醯胺單位:甲基丙烯酸甲基酯單位:羥基乙基丙烯酸酯單位為50莫耳%:30莫耳%:20莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為7600。
將N-(4-羥基苯基)甲基丙烯醯胺25.0g(大阪有機化學工業股份公司製)、羥基丙基丙烯酸酯(Aldrich公司製)18.4g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)6.5g加入丙二醇單甲基醚199.5g而使其溶解。將此溶液滴入丙二醇單甲基醚83.1g加熱至85℃之300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)49.9g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)49.9g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物,其構造相當於上述式(A-3)中所示之構造。聚合物
中的N-(4-羥基苯基)甲基丙烯醯胺單位:羥基丙基丙烯酸酯單位為50莫耳%:50莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為6100。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)25.0g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)4.5g加入丙二醇單甲基醚118.0g中並使其溶解。將此溶液滴入丙二醇單甲基醚49.2g加熱至85℃之300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)29.5g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)25.9g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物,其構造相當於上述式(B-1)所示之構造。聚合物為甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯的單獨聚合物。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為7200。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)
乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)25.0g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)5.0g加入丙二醇單甲基醚120.0g中並使其溶解。將此溶液滴入丙二醇單甲基醚50.0g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)30.0g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)30.0g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物,其構造相當於上述式(B-1)所示之構造。聚合物為甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯之單獨聚合物。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為1300。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)20.0g、丙烯酸甲基酯(東京化成工業股份公司製)7.1g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)4.9g加入丙二醇單甲基醚128.0g中並使其溶解。將此溶液滴入丙二醇單甲基醚53.3g加熱至85℃之300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX
〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)32.0g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)32.0g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-2)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:丙烯酸甲基酯單位為50莫耳%:50莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為4300。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)20.0g、丙烯酸甲基酯(東京化成工業股份公司製)7.1g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)5.4g加入丙二醇單甲基醚130.1中並使其溶解。將此溶液滴入丙二醇單甲基醚54.2g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)32.5g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)32.5g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-2)中所示之構造。聚合物中的
甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:丙烯酸甲基酯單位為50莫耳%:50莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為2746。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、2,2,2-三氟乙基甲基丙烯酸酯(東京化成工業股份公司製)6.9g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.3g加入丙二醇單甲基醚81.3g中並使其溶解。將此溶液滴入丙二醇單甲基醚33.9g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)20.3g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)20.3g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-3)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:2,2,2-三氟乙基甲基丙烯酸酯單位為50莫耳%:50莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為1500。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、丙烯酸甲基酯(東京化成工業股份公司製)2.1g、2,2,2-三氟乙基甲基丙烯酸酯(東京化成工業股份公司製)2.8g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.0g加入丙二醇單甲基醚71.6g中並使其溶解。將此溶液滴入丙二醇單甲基醚29.8g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)17.9g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)17.9g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-4)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:丙烯酸甲基酯單位:2,2,2-三氟乙基甲基丙烯酸酯單位為50莫耳%:30莫耳%:20莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為1500。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)
乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、丙烯酸甲基酯(東京化成工業股份公司製)2.1g、2,2,2-三氟乙基甲基丙烯酸酯(東京化成工業股份公司製)2.8g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.0g加入丙二醇單甲基醚71.6g中並使其溶解。將此溶液滴入丙二醇單甲基醚29.9g加熱至85℃之300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)17.9g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)17.9g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-4)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:丙烯酸甲基酯單位:2,2,2-三氟乙基甲基丙烯酸酯單位為50莫耳%:30莫耳%:20莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為6700。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、N-甲氧基甲基甲基丙烯醯胺(和光純藥股份公司製)1.1g、2,2,2,-三氟乙基甲基丙烯酸酯(東京化
成工業股份公司製)5.6g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.3g加入丙二醇單甲基醚79.8g中並使其溶解。將此溶液滴入丙二醇單甲基醚33.2g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)20.0g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)20.0g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物,其構造相當於上述式(B-5)中所示的構造。聚合物以甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:N-甲氧基甲基甲基丙烯醯胺單位:2,2,2,-三氟乙基甲基丙烯酸酯單位為50莫耳%:10莫耳%:40莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為1453。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、N-甲氧基甲基甲基丙烯醯胺(和光純藥股份公司製)2.1g、2,2,2-三氟乙基甲基丙烯酸酯(東京化成工業股份公司製)4.2g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.3g加入丙二醇單甲基醚78.2g中並使其溶解。將此溶液滴入丙二醇單甲基醚33.6g被加
熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)19.6g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)19.6g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得之聚合物,其構造相當於上述式(B-5)中所示的構造。聚合物係以其中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:N-甲氧基甲基甲基丙烯醯胺單位:2,2,2-三氟乙基甲基丙烯酸酯單位為50莫耳%:20莫耳%:30莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為1500。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)10.0g、羥基丙基丙烯酸酯(Aldrich公司製)2.2g、2,2,2-三氟乙基甲基丙烯酸酯(東京化成工業股份公司製)4.2g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)3.3g加入丙二醇單甲基醚78.3g中並使其溶解。將此溶液滴入丙二醇單甲基醚32.6g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX
〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)19.6g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)19.6g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(B-6)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:羥基丙基丙烯酸酯單位:2,2,2-三氟乙基甲基丙烯酸酯單位為50莫耳%:20莫耳%:30莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為2300。
將甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯(〔註冊商標〕力透鏡MOI-BM、昭和電工股份公司製)15.0g、N-甲氧基甲基甲基丙烯醯胺(和光純藥股份公司製)8.0g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)4.6g加入丙二醇單甲基醚110.4g中並使其溶解。將此溶液滴入丙二醇單甲基醚46.0g被加熱至100℃的300mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)27.6g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)27.6g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所
得聚合物之構造相當於上述式(B-7)中所示之構造。聚合物中的甲基丙烯酸2-(0-[1’-甲基亞丙基胺基]羧基胺基)乙基酯單位:N-甲氧基甲基甲基丙烯醯胺單位為50莫耳%:50莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為2000。
將N-(4-羥基苯基)甲基丙烯醯胺5.0g(大阪有機化學工業股份公司製)、甲基丙烯酸甲基酯(東京化成工業股份公司製)0.7g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)0.7g加入丙二醇單甲基醚25.5g中並使其溶解。將此溶液滴入丙二醇單甲基醚10.6g被加熱至85℃之100mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)6.4g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)6.4g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(A-4)中所示之構造。聚合物中的N-(4-羥基苯基)甲基丙烯醯胺單位:甲基丙烯酸甲基酯單位為80莫耳%:20莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為4700。
將N-(4-羥基苯基)甲基丙烯醯胺1.0g(大阪有機化學工業股份公司製)、甲基丙烯酸甲基酯(東京化成工業股份公司製)5.1g、2,2-偶氮雙(異丁基腈)(東京化成工業股份公司製)0.7g加入丙二醇單甲基醚27.1g中並使其溶解。將此溶液滴入丙二醇單甲基醚11.3g被加熱至85℃之100mL燒瓶中,滴下結束後約攪拌15小時。反應結束後,於此溶液中加入陽離子交換樹脂(製品名:DOWEX〔註冊商標〕550A、MUROMACHI TECHNOS(股)製)6.8g、陰離子交換樹脂(製品名:Amberlite〔註冊商標〕15JWET、有機(股)製)6.8g,於室溫下實施離子交換處理4小時,之後,取出離子交換樹脂。所得聚合物之構造相當於上述式(A-4)中所示之構造。聚合物中的N-(4-羥基苯基)甲基丙烯醯胺單位:甲基丙烯酸甲基酯單位為10莫耳%:90莫耳%。所得之化合物進行了GPC分析的結果,以標準聚苯乙烯換算,重量平均分子量Mw為4300。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例3中得到的樹脂0.12g之聚合物溶液1.08g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00058g溶解於丙二醇單甲基醚乙酸
酯1.9g、丙二醇單甲基醚0.31g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例4中得到的樹脂0.12g之聚合物溶液1.1g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.0006g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.26g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例5中得到的樹脂0.12g之聚合物溶液1.0g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.0006g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.35g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例6中得到的樹脂0.11g之聚合物溶液1.0g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.0006g溶解於丙二醇單甲基醚乙酸
酯1.9g、丙二醇單甲基醚0.33g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.56g之聚合物溶液5.6g、含有合成例7中得到的樹脂0.12g之聚合物溶液1.3g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.0006g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.28g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例10中得到的樹脂0.12g之聚合物溶液1.1g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.0006g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.27g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例11中得到的樹脂0.12g之聚合物溶液1.2g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00058g溶解於丙二醇單甲基醚乙酸
酯1.9g、丙二醇單甲基醚0.16g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例1中得到的樹脂0.58g之聚合物溶液5.8g、含有合成例12中得到的樹脂0.12g之聚合物溶液1.1g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.27g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例2中得到的樹脂0.56g之聚合物溶液5.6g、含有合成例5中得到的樹脂0.14g之聚合物溶液1.2g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.37g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液
使含有合成例2中得到的樹脂0.54g之聚合物溶液5.6g、含有合成例7中得到的樹脂0.14g之聚合物溶液1.3g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸
酯1.9g、丙二醇單甲基醚0.35g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例2中得到的樹脂0.54g之聚合物溶液5.4g、含有合成例7中得到的樹脂0.16g之聚合物溶液1.6g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.29g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例2中得到的樹脂0.56g之聚合物溶液5.6g、含有合成例11中得到的樹脂0.14g之聚合物溶液1.5g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚0.15g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例2中得到的樹脂0.56g之聚合物溶液5.6g、含有合成例11中得到的樹脂0.14g之聚合物溶液1.3g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00056g溶解於丙二醇單甲基醚乙酸
酯1.9g、丙二醇單甲基醚0.28g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例2中得到的樹脂0.50g之聚合物溶液2.7g、含有合成例13中得到的樹脂0.20g之聚合物溶液2.2g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.00050g溶解於丙二醇單甲基醚乙酸酯1.9g、丙二醇單甲基醚2.4g、γ-丁基內酯0.93g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例14中得到的樹脂1.1g之聚合物溶液8.9g、異氰酸酯系交聯劑(Degussa Japan(股)製、商品名:VESTANAT〔註冊商標〕B1358、基於異佛爾酮二異氰酸酯構造並以肟基所保護之封端聚異氰酸酯)0.3g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.001g溶解於丙二醇單甲基醚10.7g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
使含有合成例15中得到的樹脂1.1g之聚合物溶液8.3g、異氰酸酯系交聯劑(Degussa Japan(股)製、商品名:VESTANAT〔註冊商標〕B1358、基於異佛爾酮二異
氰酸酯構造並以肟基所保護之封端聚異氰酸酯)0.3g及界面活性劑(DIC(股)製、商品名:Megafac〔註冊商標〕R-40)0.001g溶解於丙二醇單甲基醚11.3g,調製用於多層膜微影製程中的阻劑下層膜形成組成物之溶液。
(對光阻劑溶劑之溶出試驗)
將實施例1~14及比較例1~2中調製的阻劑下層膜形成組成物之溶液,使用旋轉塗佈機而塗佈於矽晶圓上。在加熱板上240℃燒成1分鐘,形成阻劑下層膜(膜厚0.20μm)。使此等之阻劑下層膜進行對使用於阻劑之溶劑的OK稀釋劑(製品名、東京應化工業(股):丙二醇單甲基醚:丙二醇單甲基醚乙酸酯以容積比計為7:3之比例含有)之浸漬試驗。殘膜率係將阻劑下層膜各自置於旋轉塗佈機上2000rpm之轉數下,並各自滴入作為溶劑之OK稀釋劑60秒鐘,立即使其以3000rpm旋轉30秒鐘。將結果顯示於表1。殘膜率係以(浸漬後之膜厚)/(浸漬前之膜厚)×100所計算的結果。
(段差被覆性之評價)
將實施例1~14及比較例1~2中調製的阻劑下層膜形成組成物之溶液藉由旋轉器塗佈於段差基板上。使用的段差基板((股)ADVANTEC製)係段差之高度為400nm、L/S(線與間距)為120nm/120nm、被覆有氧化矽膜之基板。之後,將以240℃烘烤了60秒鐘之試料的剖面,以掃描型電子顯微鏡(SEM)觀察。將結果顯示於表2。將無孔隙所被覆者判斷為良好、將可見孔隙者判斷為不良。
本發明可用於使用了微影用阻劑下層膜形成組成物之阻劑圖型的形成方法。而且,本發明可提供一種阻劑下層膜形成組成物,其係可自上層轉印圖型或於基板的加工時進行乾式蝕刻,基板加工後用以形成可以鹼水溶液去除之阻劑下層膜用的阻劑下層膜形成組成物。
Claims (6)
- 如請求項1中記載的阻劑下層膜形成組成物,其中,式(1)中,R2為苯環。
- 如請求項1中記載之阻劑下層膜形成組成物,其中,聚合物(A)與聚合物(B)係使羥基或羧基與封端異氰酸酯基以莫耳比1:0.005~1.0之比例所含者。
- 如請求項1中記載之阻劑下層膜形成組成物,其係進一步含交聯觸媒。
- 一種半導體裝置之製造方法,其係含下述步驟:於半導體基板上形成由請求項1~請求項4中任1項記載之阻劑下層膜形成組成物形成阻劑下層膜之步驟、於該阻劑下層膜上形成阻劑膜之步驟、藉由光或電子線之照射與顯像而於阻劑膜上形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
- 一種半導體裝置之製造方法,其係含下述步驟:於半導體基板上形成由請求項1~請求項4中任1項記載之阻劑下層膜形成組成物形成阻劑下層膜之步驟、於該阻劑下層膜上形成無機硬遮罩層之步驟、進一步於無機硬遮罩層上形成阻劑膜之步驟、藉由光或電子線之照射與顯像而於阻劑膜上形成阻劑圖型之步驟、藉由所形成之阻劑圖型蝕刻無機硬遮罩層之步驟、藉由經圖型化之無機硬遮罩層蝕刻阻劑下層膜之步驟、及藉由經圖型化之阻劑下層膜加工半導體基板之步驟。
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