TW201732439A - 含有吲哚并咔唑酚醛清漆樹脂之光阻下層膜形成組成物 - Google Patents
含有吲哚并咔唑酚醛清漆樹脂之光阻下層膜形成組成物 Download PDFInfo
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- TW201732439A TW201732439A TW105139699A TW105139699A TW201732439A TW 201732439 A TW201732439 A TW 201732439A TW 105139699 A TW105139699 A TW 105139699A TW 105139699 A TW105139699 A TW 105139699A TW 201732439 A TW201732439 A TW 201732439A
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- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical class C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
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Abstract
本發明的課題為提供一種不引起與光阻層的互混(Intermixing),具有高度乾式蝕刻耐性,具有高度耐熱性,且昇華物量較低之光微影用光阻下層膜。本發明的解決手段為一種光阻下層膜形成組成物,其係包含含下述式(1)表示之單位構造的聚合物,□(式(1)中,A係至少具有2個胺基之2價基,係從具有稠環構造,且具有取代該稠環上之氫原子的芳香族基之化合物所衍生之基,B1、B2分別表示氫原子、烷基、苯環基、稠環基或該等之組合、或B1與B2可與鍵結該等之碳原子一起形成環)。式(1)中,A係從具有吲哚并咔唑構造之化合物所衍生之2價基。取代吲哚并咔唑構造之稠環上之氫原子的芳香族基為苯基。又,A係從式(2)所示之化合物所衍生之2價基。□
Description
本發明係關於利用吲哚并咔唑酚醛清漆樹脂之光阻下層膜形成組成物。
聚合物樹脂的聚合雖已被廣泛研究,但其中如包含酚醛清漆之環構造的聚合物,已被廣泛使用在從光阻等之微細領域至汽車或住宅之構件等之一般的領域。又,如上述之聚合物係耐熱性亦高,為了在特殊用途亦可適用,於世界中現在正被持續開發。一般而言談到由環構造所構成之單體,已知有苯、萘、蔥、芘及茀等之構造體,此等之單體已知有形成具有醛基之單體與酚醛清漆。另一方面,已經很清楚,具有與茀類似構造的咔唑亦顯示相同之特徵,兩單體皆與五員環相鄰之苯環的一部分進行反應而聚合物化。
另一方面,自以往在半導體裝置的製造,係
藉由使用光阻組成物之光微影進行微細加工。前述微細加工係於矽晶圓等之被加工基板上形成光阻組成物之薄膜,於其上透過描繪半導體裝置之圖型的遮罩圖型照射紫外線等之活性光線,並進行顯影,將所得之光阻圖型作為保護膜,蝕刻處理矽晶圓等之被加工基板之加工法。然而,近年來,進展半導體裝置之高集成度化,所使用之活性光線亦有從KrF準分子雷射(248nm)變ArF準分子雷射(193nm)之短波長化的傾向。伴隨此,有受到大幅來自活性光線之基板的亂反射或駐波的影響的問題。於此以變成於光阻與被加工基板之間設置抗反射膜的方法以被廣泛研究。
今後,進行光阻圖型的微細化時,產生解析度的問題或光阻圖型於顯影後倒塌的問題,故期望光阻之薄膜化。因此,於基板加工難以得到充分之光阻圖型膜厚,不僅光阻圖型,已變成即使於光阻與加工之半導體基板之間所作成之光阻下層膜,亦必須有作為基板加工時之遮罩的功能的製程。作為如此製程用之光阻下層膜,與以往之高蝕刻速率性(蝕刻速度較快)光阻下層膜不同,已逐漸成為要求具有接近光阻之乾式蝕刻速度的選擇比之光微影用光阻下層膜、具有與光阻相比較較小之乾式蝕刻速度的選擇比之光微影用光阻下層膜或具有與半導體基板相比較較小之乾式蝕刻速度的選擇比之光微影用光阻下層膜。
作為上述光阻下層膜用之聚合物,例如例示
以下者。
例示使用咔唑之光阻下層膜形成組成物(參照專利文獻1、專利文獻2、專利文獻3、及專利文獻4)。
[專利文獻1]國際公開WO2010/147155小冊
[專利文獻2]國際公開WO2012/077640小冊
[專利文獻3]國際公開WO2013/005797小冊
[專利文獻4]國際公開WO2014/029435小冊
本發明係提供一種用以使用在使用吲哚并咔唑酚醛清漆樹脂之半導體裝置製造的光微影製程之光阻下層膜形成組成物。又,本發明係提供一種不引起與光阻層的互混(Intermixing),具有高度乾式蝕刻耐性,具有高度耐熱性,且昇華物量較低之光微影用光阻下層膜。又,本發明亦可賦予有效果地吸收來自將照射光使用在微細加工時之基板的反射光之性能。進而,本發明係提供一種使用光阻下層膜形成組成物之光阻圖型的形成法。
本發明作為第1觀點,係一種光阻下層膜形成組成物,其係包含含下述式(1)表示之單位構造的聚合物,
(式(1)中,A係至少具有2個胺基之2價基,該基係從具有稠環構造,且具有取代該稠環上之氫原子的芳香族基之化合物所衍生之基,B1、B2分別獨立表示氫原子、烷基、苯環基、稠環基或該等之組合、或B1與B2可與鍵結該等之碳原子一起形成環)、作為第2觀點,係如第1觀點所記載之光阻下層膜形成組成物,其中,式(1)中,A係從具有吲哚并咔唑構造之化合物所衍生之2價基、作為第3觀點,係如第2觀點所記載之光阻下層膜形成組成物,其中,取代具有吲哚并咔唑構造之化合物的稠環上之氫原子的芳香族基為苯基、作為第4觀點,係如第1觀點所記載之光阻下層膜形成組成物,其中,式(1)中,A係從式(2)表示之化合物所衍生之2價基,
(式(2)中,R1及R2分別獨立表示氫原子、碳原子數1~10之烷基、或碳原子數6~40之芳基)、作為第5觀點,係如第4觀點所記載之光阻下層膜形成組成物,其中,式(2)表示之化合物係將吲哚與苄基於酸化合物的存在下使其反應所得之反應物。
作為第6觀點,係如第1觀點~第5觀點中任一項所記載之光阻下層膜形成組成物,其係進一步包含交聯劑、作為第7觀點,係如第1觀點~第6觀點中任一項所記載之光阻下層膜形成組成物,其係進一步包含酸及/或酸產生劑、作為第8觀點,係一種光阻下層膜之製造方法,其係藉由將如第1觀點~第7觀點中任一項所記載之光阻下層膜形成組成物塗佈在半導體基板上進行燒成而獲得、作為第9觀點,係一種半導體裝置之製造方法,其係包含:於半導體基板上由如第1觀點~第7觀點中任一項所記載之光阻下層膜形成組成物形成光阻下層膜之步驟、於其上形成光阻膜之步驟、藉由光或電子束之照射與顯影
形成光阻圖型之步驟、藉由經形成之光阻圖型蝕刻該光阻下層膜之步驟、及藉由經圖型化之光阻下層膜加工半導體基板之步驟、作為第10觀點,係一種半導體裝置之製造方法,其係包含:於半導體基板上由如第1觀點~第7觀點中任一項所記載之光阻下層膜形成組成物形成光阻下層膜之步驟、於其上形成硬遮罩之步驟、進而於其上形成光阻膜之步驟、藉由光或電子束之照射與顯影形成光阻圖型之步驟、藉由經形成之光阻圖型蝕刻該硬遮罩之步驟、藉由經圖型化之硬遮罩蝕刻該光阻下層膜之步驟、及藉由經圖型化之光阻下層膜加工半導體基板之步驟、及作為第11觀點,係一種具有式(1)表示之單位構造的聚合物,
[式(1)中,A係表示從式(2)表示之化合物所衍生之2價基,
(式(2)中,R1及R2分別獨立表示氫原子、碳原子數1~10之烷基、或碳原子數6~40之芳基),B1、B2分別獨立表示氫原子、烷基、苯環基、稠環基或該等之組合或、B1與B2可與鍵結該等之碳原子一起形成環]。
藉由本發明之光微影用光阻下層膜形成組成物,不會引起光阻下層膜之上層部與被覆於其上之層的互混,可形成良好之光阻的圖型形狀。
本發明之光阻下層膜形成組成物中,亦可賦予有效率地抑制來自基板的反射之性能,亦可一併具有作為曝光光之抗反射膜的效果。
藉由本發明之光阻下層膜形成組成物,可提供一種具有接近光阻之乾式蝕刻速度的選擇比、與光阻相比較較小之乾式蝕刻速度的選擇比或與半導體基板相比較較小之乾式蝕刻速度的選擇比之優異的光阻下層膜。
又,係使用本發明之光阻下層膜加工基板
時,相對於加工基板(例如基板上之熱氧化矽膜、氮化矽膜、多晶矽膜等)具有充分蝕刻耐性者。
伴隨光阻圖型之微細化,為了防止光阻圖型於顯影後倒塌,而進行光阻之薄膜化。於如此之薄膜光阻,將光阻圖型於蝕刻製程轉印至該下層膜,重複將該下層膜作為遮罩進行基板加工之製程、或將光阻圖型於蝕刻製程轉印至該下層膜,進而使用轉印至下層膜之圖型的不同氣體組成轉印至該下層膜之行程,最後進行基板加工之製程。本發明之光阻下層膜及其形成組成物於此製程係有效。
進而,於本發明使用之聚合物由於為包含具有吲哚并咔唑之單位構造的聚合物,故耐熱性極高。在進行半導體基板之加工的製程,於基板上所形成之光阻下層膜之上形成硬遮罩,於其上形成光阻膜的情況下,將此硬遮罩形成藉由無機物(例如氮化氧化矽)之真空蒸鍍進行的情況下,蒸鍍物雖堆積在光阻下層膜表面,但此時光阻下層膜表面的溫度上昇至400℃前後。硬化本發明之光阻下層膜形成組成物而成之光阻下層膜由於為高耐熱性,即使藉由蒸鍍物之堆積亦不會產生熱劣化。又,於本發明之光阻下層膜形成組成物,由於如上述熱安定性高,且可減低燒成時之分解物(昇華物)的發生,防止對上層膜的污染,又,係可於燒成步驟之溫度幅度具有餘量者。
據此,本發明之光阻下層膜可作為平坦化膜、光阻下層膜、光阻層之污染防止膜、具有乾式刻蝕選擇性之膜使用。藉此,變成可精度良好地輕易進行在半導
體製造之光微影製程的光阻圖型形成。
本發明係關於包含式(1)表示之單位構造的聚合物,係關於包含含式(1)表示之單位構造的聚合物之光阻下層膜形成組成物。
於本發明係包含上述聚合物與溶劑。而且可包含交聯劑與酸,如有必要可包含酸產生劑、界面活性劑等之添加劑。此組成物的固形分為0.1~70質量%、或0.1~60質量%。固形分係從光阻下層膜形成組成物去除溶劑之全成分的含有比例。固形分中可將上述聚合物以1~100質量%、或1~99.9質量%、或50~99.9質量%的比例含有。
本發明所使用之聚合物為重量平均分子量為600~1000000、或600~200000。
式(1)中,A係至少具有2個胺基之2價基,該基係從具有稠環構造,且具有取代該稠環上之氫原子的芳香族基之化合物所衍生之基,B1、B2分別獨立表示氫原子、烷基、苯環基、稠環基或該等之組合、或B1與B2可與鍵結該等之碳原子一起形成環。A係至少具有2個第2級胺基之2價基,該基較佳為具有稠環構造,且表示從具有取代該稠環上之氫原子的芳香族基之化合物所衍生之2價基。
式(1)中,作為A,可表示從具有吲哚并咔唑構造之化合物所衍生之2價基。取代吲哚并咔唑構造之
稠環上之氫原子的芳香族基,例如雖可列舉苯基、萘基、蒽基、芘基等,但優選使用苯基。
式(1)中,作為A,可使用從式(2)表示之化合物所衍生之2價基。包含此情況之式(1)表示之單位構造的聚合物係新穎之聚合物,作為本發明之光阻下層膜形成組成物之構成成分優異。
上述式(2)表示之化合物於R1與R2為氫原子的情況下,為二苯基吲哚并咔唑,又,可列舉具有取代氮上之氫原子之取代基的該衍生物。上述二苯基吲哚并咔唑,相對於2莫耳之吲哚,可將1莫耳之苄基於酸觸媒的存在下使其反應而獲得。作為酸觸媒,優選使用甲烷磺酸、p-甲苯磺酸、p-甲苯磺酸一水合物等之有機磺酸類。可藉由使用甲苯等之烴溶劑,於140~180℃左右之溫度進行50~20小時之迴流合成。
式(2)中,R1及R2分別獨立表示氫原子、碳原子數1~10之烷基、或碳原子數6~40之芳基。尤其是可使用氫原子。
作為碳原子數1~10之烷基,可列舉甲基、乙基、n-丙基、i-丙基、環丙基、n-丁基、i-丁基、s-丁基、t-丁基、環丁基、1-甲基-環丙基、2-甲基-環丙基、n-戊基、1-甲基-n-丁基、2-甲基-n-丁基、3-甲基-n-丁基、1,1-二甲基-n-丙基、1,2-二甲基-n-丙基、2,2-二甲基-n-丙基、1-乙基-n-丙基、環戊基、1-甲基-環丁基、2-甲基-環丁基、3-甲基-環丁基、1,2-二甲基-環丙基、2,3-二甲基-
環丙基、1-乙基-環丙基、2-乙基-環丙基、n-己基、1-甲基-n-戊基、2-甲基-n-戊基、3-甲基-n-戊基、4-甲基-n-戊基、1,1-二甲基-n-丁基、1,2-二甲基-n-丁基、1,3-二甲基-n-丁基、2,2-二甲基-n-丁基、2,3-二甲基-n-丁基、3,3-二甲基-n-丁基、1-乙基-n-丁基、2-乙基-n-丁基、1,1,2-三甲基-n-丙基、1,2,2-三甲基-n-丙基、1-乙基-1-甲基-n-丙基、1-乙基-2-甲基-n-丙基、環己基、1-甲基-環戊基、2-甲基-環戊基、3-甲基-環戊基、1-乙基-環丁基、2-乙基-環丁基、3-乙基-環丁基、1,2-二甲基-環丁基、1,3-二甲基-環丁基、2,2-二甲基-環丁基、2,3-二甲基-環丁基、2,4-二甲基-環丁基、3,3-二甲基-環丁基、1-n-丙基-環丙基、2-n-丙基-環丙基、1-i-丙基-環丙基、2-i-丙基-環丙基、1,2,2-三甲基-環丙基、1,2,3-三甲基-環丙基、2,2,3-三甲基-環丙基、1-乙基-2-甲基-環丙基、2-乙基-1-甲基-環丙基、2-乙基-2-甲基-環丙基及2-乙基-3-甲基-環丙基等。
作為上述碳數6~40之芳基,可列舉苯基、o-甲基苯基、m-甲基苯基、p-甲基苯基、o-氯苯基、m-氯苯基、p-氯苯基、o-氟苯基、p-氟苯基、o-甲氧基苯基、p-甲氧基苯基、p-硝基苯基、p-氰基苯基、α-萘基、β-萘基、o-聯苯基、m-聯苯基、p-聯苯基、1-蒽基、2-蒽基、9-蒽基、1-菲基、2-菲基、3-菲基、4-菲基、9-菲基、芘基。
式(1)表示之單位構造中之B1、B2分別獨立表示氫原子、烷基、苯環基、稠環基或該等之組合,B1
與B2可與鍵結該等之碳原子一起形成環。於此所謂該等之組合,係意指藉由烷基與苯環基或稠環基的組合之基,例如可表示苄基或甲基蔥基等。
B1、B2分別成為具有式(1)表示之單位構造的聚合物之製造時之原料,係源自具有氫原子、烷基、苯環基、稠環基之醛或酮之基,於與提供相當於A的部分之化合物之間形成酚醛清漆樹脂。
上述烷基係表示上述之碳原子數1~10之烷基。稠環基係表示相當於上述碳數10~40之芳基之稠環基,可列舉萘基、蒽基、芘基、或其衍生物。
又,上述式(1)中,作為提供基B1、B2部分之原料的醛,B1、B2為氫原子的情況下,可列舉甲醛。B1為氫原子且B2為烷基的情況下,可列舉乙醛、乙基醛、異丁基醛等。B1為氫原子且B2為苯環基的情況下,可列舉苯甲醛等。B1為氫原子且B2為稠環基的情況下,可列舉萘基醛、蒽醛、芘羧醛等。B1為氫原子且B2為烷基與苯環的組合的情況下,可列舉苯基乙醛等。
又,所謂B1與B2與鍵結該等之碳原子一起形成環的情況,相當於在具有式(1)表示之單位構造的聚合物之製造使用酮的情況。作為酮為二芳基酮、烷基芳基酮,例如可列舉二苯基酮、苯基萘基酮、二萘基酮、苯基甲苯基酮、二甲苯基酮、9-芴酮、甲基苯基酮等。
作為在具有上述式(1)表示之單位構造的聚合物之製造的縮合反應所使用之酸觸媒,例如使用硫酸、
磷酸、高氯酸等之礦酸類、甲烷磺酸、p-甲苯磺酸、p-甲苯磺酸一水合物等之有機磺酸類、蟻酸、草酸等之羧酸類。酸觸媒的使用量因所使用之酸類的種類而進行各種選擇。通常相對於提供相當於式(1)之A的部分之化合物的100質量份為0.001~10000質量份,較佳為0.01~1000質量份,更佳為0.1~100質量份。
上述之縮合反應雖即使無溶劑亦可進行,但通常使用溶劑進行。作為溶劑,只要是不阻礙反應者全部可使用。例如可列舉四氫呋喃、二噁烷等之環狀醚類、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯等。又,使用之酸觸媒,例如若為如蟻酸之液狀者,亦可兼具作為溶劑的功用。
縮合時之反應溫度通常為40℃~200℃。反應時間雖因反應溫度而進行各種選擇,但通常為30分鐘~50小時左右。
如以上進行所得之聚合物的重量平均分子量Mw通常為600~1000000、或600~200000。
式(1)表示之單位構造可例示於以下。
上述聚合物可將其他聚合物於全聚合物中以30質量%以內混合使用。
作為該等聚合物,可列舉聚丙烯酸酯化合物、聚甲基丙烯酸酯化合物、聚丙烯醯胺化合物、聚甲基丙烯醯胺化合物、聚乙烯化合物、聚苯乙烯化合物、聚馬來醯亞胺化合物、聚馬來酸酐、及聚丙烯腈化合物。
本發明之光阻下層膜形成組成物可包含交聯
劑成分。作為該交聯劑,可列舉三聚氰胺系、取代脲系、或該等之聚合物系等。較佳為至少具有2個交聯形成取代基之交聯劑,為甲氧基甲基化甘脲、丁氧基甲基化甘脲、甲氧基甲基化三聚氰胺、丁氧基甲基化三聚氰胺、甲氧基甲基化苯胍胺、丁氧基甲基化苯胍胺、甲氧基甲基化脲、丁氧基甲基化脲、甲氧基甲基化硫脲、或甲氧基甲基化硫脲等之化合物。又,亦可使用此等之化合物之縮合體。
又,作為上述交聯劑,可使用耐熱性較高之交聯劑。作為耐熱性較高之交聯劑,優選使用於分子內含有具芳香族環(例如苯環、萘環)之交聯形成取代基的化合物。
此等之化合物可列舉具有下述式(3)表示之部分構造的化合物、或具有下述式(4)表示之重複單位的聚合物或寡聚物。
式(3)中,R3及R4分別獨立為氫原子、碳數1~10之烷基、或碳數6~20之芳基,n1係表示1~4之整數,n2係表示1~(5-n1)之整數,(n1+n2)係表示2~5之
整數。
式(4)中,R5係表示氫原子或碳數1~10之烷基,R6係表示碳數1~10之烷基,n3係表示1~4之整數,n4係表示0~(4-n3),(n3+n4)係表示1~4之整數。寡聚物及聚合物可於重複單位構造數目為2~100、或2~50的範圍使用。
此等之烷基及芳基可例示上述烷基及芳基。
式(3)、式(4)表示之化合物、聚合物、寡聚物例示於以下。
上述化合物可作為旭有機材工業(股)、本州化學工業(股)之製品取得。例如於上述交聯劑當中,式(4-21)之化合物可作為旭有機材工業(股)、商品名TM-BIP-A取得。
交聯劑的添加量雖因使用之塗佈溶劑、使用之基底基板、所要求之溶液黏度、所要求之膜形狀等而有所變動,但相對於全固形分為0.001~80質量%,較佳為0.01~50質量%,更佳為0.05~40質量%。此等交聯劑雖亦有因自我縮合導致引起交聯反應的情況,但於本發明之上述之聚合物中存在交聯性取代基的情況下,可與該等之交聯性取代基引起交聯反應。
於本發明,作為用以促進上述交聯反應之觸媒,可摻合p-甲苯磺酸、三氟甲烷磺酸、吡啶鎓p-甲苯磺酸、水楊酸、磺基水楊酸、檸檬酸、苯甲酸、羥基苯甲酸、萘羧酸等之酸性化合物或/及2,4,4,6-四溴環己二烯酮、安息香甲苯磺酸(tosylate)、2-硝基苄基甲苯磺酸、其他有機磺酸烷基酯等之熱酸產生劑。摻合量相對於全固形分為0.0001~20質量%,較佳為0.0005~10質量%,更佳為0.01~3質量%。
本發明之光微影用塗佈型下層膜形成組成物,於光微影步驟為了使與上層所被覆之光阻的酸性度一致,可添加光酸產生劑。作為較佳之光酸產生劑,例如可列舉雙(4-t-丁基苯基)碘鎓三氟甲烷磺酸酯、三苯基鋶三氟甲烷磺酸酯等之鎓鹽系光酸產生劑類、苯基-雙(三氯甲基)-s-三嗪等之鹵素含有化合物系光酸產生劑類、安息香甲苯磺酸、N-羥基琥珀醯亞胺三氟甲烷磺酸酯等之磺酸系光酸產生劑類等。上述光酸產生劑相對於全固形分為0.2~10質量%,較佳為0.4~5質量%。
本發明之光微影用光阻下層膜組成物中,除了上述以外如有必要可進一步添加吸光劑、流變調整劑、接著輔助劑、界面活性劑等。
作為進一步之吸光劑,例如可適合使用「工業用色素之技術與市場」(CMC出版)或「染料便覽」(有機合成化學協會編)所記載之市售吸光劑,例如C.I.Disperse Yellow 1,3,4,5,7,8,13,23,31,49,50,51,54,60,64,
66,68,79,82,88,90,93,102,114及124;C.I.Disperse Orange 1,5,13,25,29,30,31,44,57,72及73;C.I.Disperse Red 1,5,7,13,17,19,43,50,54,58,65,72,73,88,117,137,143,199及210;C.I.Disperse Violet43;C.I.DisperseBlue96;C.I.Fluorescent Brightening Agent 112,135及163;C.I.Solvent Orange 2及45;C.I.Solvent Red 1,3,8,23,24,25,27及49;C.I.Pigment Green10;C.I.Pigment Brown 2等。上述吸光劑通常相對於光微影用光阻下層組成物之全固形分為10質量%以下,較佳為以5質量%以下的比例摻合。
流變調整劑主要是使光阻下層膜形成組成物的流動性提昇,尤其是在烘烤步驟,係以提昇光阻下層膜之膜厚均一性或提高對孔內部之光阻下層膜形成組成物的填充性為目的而添加。作為具體例,可列舉二甲基苯二甲酸酯、二乙基苯二甲酸酯、二異丁基苯二甲酸酯、二己基苯二甲酸酯、丁基異癸基苯二甲酸酯等之苯二甲酸衍生物、二正丁基己二酸酯、二異丁基己二酸酯、二異辛基己二酸酯、辛基癸基己二酸酯等之己二酸衍生物、二正丁基馬來酸酯、二乙基馬來酸酯、二壬基馬來酸酯等之馬來酸衍生物、甲基油酸酯、丁基油酸酯、四氫化糠基油酸酯等之油酸衍生物、或正丁基硬脂酸酯、甘油基硬脂酸酯等之硬脂酸衍生物。此等之流變調整劑相對於光微影用光阻下層膜組成物之全固形分,通常以未滿30質量%的比例摻合。
接著輔助劑主要是使基板或光阻與光阻下層膜形成組成物的密著性提昇,尤其是在顯影,係以用以不剝離光阻的方式進行為目的而添加。作為具體例,可列舉三甲基氯矽烷、二甲基乙烯基氯矽烷、甲基二苯基氯矽烷、氯甲基二甲基氯矽烷等之氯矽烷類、三甲基甲氧基矽烷、二甲基二乙氧基矽烷、甲基二甲氧基矽烷、二甲基乙烯基乙氧基矽烷、二苯基二甲氧基矽烷、苯基三乙氧基矽烷等之烷氧基矽烷類、六甲基二矽氮烷、N,N’-雙(三甲基矽烷基)脲、二甲基三甲基矽烷基胺、三甲基矽烷基咪唑等之矽氮烷類、乙烯基三氯矽烷、γ-氯丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷等之矽烷類、苯并***、苯并咪唑、吲唑、咪唑、2-巰基苯并咪唑、2-巰基苯并噻唑、2-巰基苯并噁唑、脲唑、硫脲嘧啶(Thiouracil)、巰基咪唑、巰基嘧啶等之雜環式化合物、或1,1-二甲基脲、1,3-二甲基脲等之脲、或硫脲化合物。此等之接著輔助劑相對於光微影用光阻下層膜組成物之全固形分,通常為以未滿5質量%,較佳為以未滿2質量%的比例摻合。
本發明之光微影用光阻下層膜組成物中,為了不產生針孔或條紋等,進一步提昇對於表面不規則之塗佈性,可摻合界面活性劑。作為界面活性劑,例如可列舉聚氧乙烯月桂基醚、聚氧乙烯硬脂基醚、聚氧乙烯十六烷基醚、聚氧乙烯油基醚等之聚氧乙烯烷基醚類、聚氧乙烯辛基酚醚、聚氧乙烯壬基酚醚等之聚氧乙烯烷基烯丙基醚
類、聚氧乙烯.聚氧丙烯嵌段共聚物類、山梨糖醇酐單月桂酸酯、山梨糖醇酐單棕櫚酸酯、山梨糖醇酐單硬脂酸酯、山梨糖醇酐單油酸酯、山梨糖醇酐三油酸酯、山梨糖醇酐三硬脂酸酯等之山梨糖醇酐脂肪酸酯類、聚氧乙烯山梨糖醇酐單月桂酸酯、聚氧乙烯山梨糖醇酐單棕櫚酸酯、聚氧乙烯山梨糖醇酐單硬脂酸酯、聚氧乙烯山梨糖醇酐三油酸酯、聚氧乙烯山梨糖醇酐三硬脂酸酯等之聚氧乙烯山梨糖醇酐脂肪酸酯類等之非離子系界面活性劑、EFTOP EF301、EF303、EF352((股)Tochem Products製、商品名)、Megafac F171、F173、R-30、R-40、R-40N(DIC(股)製、商品名)、Florard FC430、FC431(住友3M(股)製、商品名)、Asahi Guard AG710、Surflon S-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(股)製、商品名)等之氟系界面活性劑、有機矽氧烷聚合物KP341(信越化學工業(股)製)等。此等之界面活性劑的摻合量,相對於本發明之光微影用光阻下層膜組成物之全固形分,通常為2.0質量%以下,較佳為1.0質量%以下。此等之界面活性劑可單獨添加,又亦可以2種以上之組合添加。
於本發明,上述之聚合物及交聯劑成分,作為使交聯觸媒等溶解之溶劑,可使用乙二醇單甲基醚、乙二醇單乙基醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲基醚、二乙二醇單乙基醚、丙二醇、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚、丙
二醇單乙基醚乙酸酯、丙二醇丙基醚乙酸酯、甲苯、二甲苯、甲基乙基酮、環戊酮、環己酮、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、乙氧基乙酸乙酯、羥基乙酸乙酯、2-羥基-3-甲基丁酸甲酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸乙酯、3-乙氧基丙酸甲酯、丙酮酸甲酯、丙酮酸乙酯、乙酸乙酯、乙酸丁酯、乳酸乙酯、乳酸丁酯等。此等之有機溶劑可單獨、或以2種以上之組合使用。
進而,可混合丙二醇單丁基醚、丙二醇單丁基醚乙酸酯等之高沸點溶劑使用。此等之溶劑當中,丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、乳酸乙酯、乳酸丁酯、及環己酮等對於整平性的提昇較佳。
其次,針對本發明之光阻圖型形成法進行說明時,於精密集成電路元件之製造所使用之基板(例如矽/二氧化矽被覆、玻璃基板、ITO基板等之透明基板)上藉由旋轉器、塗佈機等適當之塗佈方法,塗佈本發明之光阻下層膜形成組成物後,進行烘烤使其硬化而作成塗佈型下層膜。於此,作為光阻下層膜的膜厚,較佳為0.01~3.0μm。又,作為塗佈後進行烘烤之條件,為於80~350℃ 0.5~120分鐘。然後,於光阻下層膜上可直接、或如有必要將1層~數層之塗膜材料成膜在塗佈型下層膜上後,塗佈光阻,通過預定之遮罩進行光或電子束之照射,藉由進行顯影、清洗、乾燥,可得到良好之光阻圖型。如有必要亦可進行光或電子束之照射後加熱(PEB:Post
Exposure Bake)。而且將光阻由前述步驟去除顯影部分之光阻下層膜藉由乾式蝕刻去除,可將所期望之圖型形成在基板上。
所謂本發明所使用之光阻,係光阻或電子束光阻。
作為塗佈在本發明之光微影用光阻下層膜的上部之光阻,負型、正型皆可使用,有由酚醛清漆樹脂與1,2-萘醌二疊氮磺酸酯所構成之正型光阻、由具有因酸導致分解而使鹼溶解速度上昇之基的接著劑與光酸產生劑所構成之化學增幅型光阻、由鹼可溶性接著劑與因酸導致分解而使光阻之鹼溶解速度上昇之低分子化合物與光酸產生劑所構成之化學增幅型光阻、由具有因酸導致分解而使鹼溶解速度上昇之基的接著劑與因酸導致分解而使光阻之鹼溶解速度上昇之低分子化合物與光酸產生劑所構成之化學增幅型光阻、於骨架具有Si原子之光阻等,例如可列舉羅門哈斯公司製、商品名APEX-E。
又,作為塗佈在本發明之光微影用光阻下層膜的上部之電子束光阻,例如可列舉由於主鏈包含Si-Si鍵於末端包含芳香族環之樹脂與因電子束之照射導致產生酸之酸產生劑所構成之組成物、或由羥基以包含N-羧基胺之有機基取代之聚(p-羥基苯乙烯)與因電子束之照射導致產生酸之酸產生劑所構成之組成物等。於後者之電子束光阻組成物,係藉由電子束照射從酸產生劑產生之酸與聚合物側鏈之N-羧基胺氧基進行反應,聚合物側鏈分解
在羥基,顯示鹼可溶性並溶解在鹼顯影液,而形成光阻圖型者。藉由此電子束的照射而產生酸之酸產生劑,可列舉1,1-雙[p-氯苯基]-2,2,2-三氯乙烷、1,1-雙[p-甲氧基苯基]-2,2,2-三氯乙烷、1,1-雙[p-氯苯基]-2,2-二氯乙烷、2-氯-6-(三氯甲基)吡啶等之鹵素化有機化合物、三苯基鋶鹽、二苯基碘鎓鹽等之鎓鹽、硝基苄基甲苯磺酸、二硝基苄基甲苯磺酸等之磺酸酯。
光阻溶液於塗佈後,以燒成溫度70~150℃、燒成時間0.5~5分鐘進行,以光阻膜厚為10~1000nm的範圍得到。光阻溶液或顯影液或以下所示之塗佈材料,雖可用旋塗、浸漬法、噴霧法等被覆,但特佳為旋塗法。光阻之曝光通過預定之遮罩進行曝光。曝光中可使用KrF準分子雷射-(波長248nm)、ArF準分子雷射-(波長193nm)及EUV光(波長13.5nm)、電子束等。曝光後,如有必要亦可進行曝光後加熱(PEB:Post Exposure Bake)。曝光後加熱,可從加熱溫度70℃~150℃、加熱時間0.3~10分鐘適當選擇。
作為使用本發明之光微影用光阻下層膜組成物,而具有經形成之光阻下層膜之光阻的顯影液,可使用氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨水等之無機鹼類、乙基胺、n-丙基胺等之第一胺類、二乙基胺、二-n-丁基胺等之第二胺類、三乙基胺、甲基二乙基胺等之第三胺類、二甲基乙醇胺、三乙醇胺等之醇胺類、四甲基氫氧化銨、四乙基氫氧化銨、膽鹼等之第4級銨
鹽、吡咯、哌啶等之環狀胺類、等之鹼類之水溶液。進而,亦可於上述鹼類之水溶液適當量添加異丙基醇等之醇類、非離子系等之界面活性劑來使用。此等當中較佳之顯影液為第四級銨鹽,更佳為四甲基氫氧化銨及膽鹼。
又,於本發明,於光阻之顯影,作為顯影液,可使用有機溶劑。於光阻之曝光後藉由顯影液(溶劑)進行顯影。藉此,例如使用正型光阻的情況下,去除未經曝光部分的光阻,形成光阻之圖型。
作為顯影液,例如,可列舉乙酸甲酯、乙酸丁酯、乙酸乙酯、乙酸異丙酯、乙酸戊酯、乙酸異戊酯、甲氧基乙酸乙酯、乙氧基乙酸乙酯、丙二醇單甲基醚乙酸酯、乙二醇單乙基醚乙酸酯、乙二醇單丙基醚乙酸酯、乙二醇單丁基醚乙酸酯、乙二醇單苯基醚乙酸酯、二乙二醇單甲基醚乙酸酯、二乙二醇單丙基醚乙酸酯、二乙二醇單乙基醚乙酸酯、二乙二醇單苯基醚乙酸酯、二乙二醇單丁基醚乙酸酯、2-甲氧基丁基乙酸酯、3-甲氧基丁基乙酸酯、4-甲氧基丁基乙酸酯、3-甲基-3-甲氧基丁基乙酸酯、3-乙基-3-甲氧基丁基乙酸酯、丙二醇單乙基醚乙酸酯、丙二醇單丙基醚乙酸酯、2-乙氧基丁基乙酸酯、4-乙氧基丁基乙酸酯、4-丙氧基丁基乙酸酯、2-甲氧基戊基乙酸酯、3-甲氧基戊基乙酸酯、4-甲氧基戊基乙酸酯、2-甲基-3-甲氧基戊基乙酸酯、3-甲基-3-甲氧基戊基乙酸酯、3-甲基-4-甲氧基戊基乙酸酯、4-甲基-4-甲氧基戊基乙酸酯、丙二醇二乙酸酯、蟻酸甲酯、蟻酸乙酯、蟻酸丁酯、蟻酸丙
酯、乳酸乙酯、乳酸丁酯、乳酸丙酯、碳酸乙酯、碳酸丙酯、碳酸丁酯、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、丙酮酸丁酯、乙醯乙酸甲酯、乙醯乙酸乙酯、丙酸甲酯、丙酸乙酯、丙酸丙酯、丙酸異丙酯、2-羥基丙酸甲酯、2-羥基丙酸乙酯、甲基-3-甲氧基丙酸酯、乙基-3-甲氧基丙酸酯、乙基-3-乙氧基丙酸酯、丙基-3-甲氧基丙酸酯等為例。進而,亦可於此等之顯影液加入界面活性劑等。作為顯影的條件,係從溫度5~50℃、時間10~600秒中適當選擇。
於本發明,可經過於半導體基板上由本發明之光阻下層膜形成組成物形成光阻下層膜之步驟、於其上形成光阻膜之步驟、藉由光或電子束照射與顯影形成光阻圖型之步驟、藉由所形成之光阻圖型蝕刻該光阻下層膜之步驟、及藉由經圖型化之光阻下層膜加工半導體基板之步驟,來製造半導體裝置。
今後,進行光阻圖型之微細化時,產生解析度的問題或光阻圖型於顯影後倒塌的問題,期望光阻之薄膜化。因此,於基板加工難以得到充分之光阻圖型膜厚,不僅光阻圖型,已變成即使於光阻與加工之半導體基板之間所作成之光阻下層膜,亦必須有作為基板加工時之遮罩的功能的製程。作為如此之製程用之光阻下層膜,係與以往之高蝕刻速率性光阻下層膜不同,已逐漸成為要求具有接近光阻之乾式蝕刻速度的選擇比之光微影用光阻下層膜、具有與光阻相比較較小之乾式蝕刻速度的選擇比之光
微影用光阻下層膜或具有與半導體基板相比較較小之乾式蝕刻速度的選擇比之光微影用光阻下層膜。又,亦可對如此之光阻下層膜賦予抗反射能,可一併具有以往之抗反射膜的功能。
另一方面,為了得到微細之光阻圖型,於光阻下層膜之乾式蝕刻時,亦開始將光阻圖型與光阻下層膜使用較光阻顯影時之圖型寬更細之製程。作為如此之製程用之光阻下層膜,係與以往之高蝕刻速率性抗反射膜不同,已逐漸成為要求具有接近光阻之乾式蝕刻速度的選擇比之光阻下層膜。又,亦可對如此之光阻下層膜賦予抗反射能,可一併具有以往之抗反射膜的功能。
於本發明,於基板上成膜本發明之光阻下層膜後,於光阻下層膜上可直接、或如有必要可將1層~數層之塗膜材料成膜在光阻下層膜上後,塗佈光阻。藉此,光阻的圖型寬變狹小,為了防止圖型倒塌,即使於將光阻變薄被覆的情況,亦可藉由選擇適當之蝕刻氣體,進行基板的加工。
即,可經過於半導體基板上由本發明之光阻下層膜形成組成物形成光阻下層膜之步驟、於其上藉由含有矽成分等塗膜材料形成硬遮罩或藉由蒸鍍形成硬遮罩(例如氮化氧化矽)之步驟、進而於其上形成光阻膜之步驟、藉由光或電子束之照射與顯影形成光阻圖型之步驟、藉由經形成之光阻圖型將硬遮罩以鹵素系氣體蝕刻之步驟、藉由經圖型化之硬遮罩將該光阻下層膜以氧系氣體或
氫系氣體蝕刻之步驟、及藉由經圖型化之光阻下層膜以鹵素系氣體加工半導體基板之步驟,來製造半導體裝置。
如上述,將光阻下層膜形成在基板上,於其上形成硬遮罩,於其上形成光阻膜,藉由曝光與顯影形成光阻圖型,將光阻圖型轉印至硬遮罩,將轉印至硬遮罩之光阻圖型轉印至光阻下層膜,於該光阻下層膜進行半導體基板的加工之製程中,硬遮罩有藉由包含有機聚合物或無機聚合物與溶劑之塗佈型的組成物進行的情況、與藉由無機物之真空蒸鍍進行的情況。無機物(例如氮化氧化矽)之真空蒸鍍中,蒸鍍物雖堆積在光阻下層膜表面,但此時光阻下層膜表面的溫度上昇至400℃前後。本發明之光阻下層膜形成組成物中所使用之聚合物,由於為包含具吲哚并咔唑之單位構造的聚合物,故耐熱性極高且即使因蒸鍍物之堆積亦不會導致產生熱劣化。
本發明之光微影用光阻下層膜形成組成物中,係熱安定性高,且防止因燒成時之分解物導致對上層膜的污染,又,係可於燒成步驟之溫度幅度具有餘量者。
本發明之光微影用光阻下層膜形成組成物考量作為抗反射膜的效果的情況下,由於光吸收部位納入骨架,於加熱乾燥時無對光阻中之擴散物,又,光吸收部位由於具有非常大之吸光性能,故抗反射光效果高。
進而,本發明之光微影用光阻下層膜組成物視製程條件,可作為具有防止光反射之功能、與進而基板與光阻的相互作用之防止或防止光阻所使用之材料或對光
阻之曝光時所生成之物質的基板的不良作用的功能之膜使用。
於1L三口燒瓶放入30.00g之苄基(東京化成工業股份有限公司製)、41.79g之吲哚(東京化成工業股份有限公司製)、5.43g之p-甲苯磺酸一水合物(東京化成工業股份有限公司製)、300g之甲苯(關東化學股份有限公司製)。然後,附在迴流管,於氮環境下、160℃約迴流攪拌12小時。反應結束後,將沉澱物在吸引過濾進行回收,以甲苯1L、甲醇1L洗淨。沉澱物於60℃約使其真空乾燥12小時。
於1L三口燒瓶放入經乾燥之沉澱物與1,4-二噁烷500mL。然後,附在迴流管,於氮環境下、120℃約迴流攪拌1小時。停止攪拌後,使其冷卻進行再結晶。將再結晶之化合物在吸引過濾進行回收,以1,4-二噁烷1L、己烷1L洗淨。沉澱物於60℃約使其真空乾燥12小時,而得到17.7g、收率24.6%、純度99.1%之式(2-1)所示之化合物1。
於三口燒瓶放入5.00g之化合物1、2.84g之1-芘羧醛(Aldrich(股)製)、19.12g之丙二醇單甲基醚乙酸酯、0.35g之甲烷磺酸(東京化成工業股份有限公司製)。然後加熱至150℃,約迴流攪拌36小時。反應結束後,以丙二醇單甲基醚乙酸酯24.80g稀釋,將沉澱物藉由過濾去除。將回收之濾液於甲醇溶液中滴下,使其再沉澱。將所得之沉澱物進行吸引過濾,將濾物於60℃進行一晚減壓乾燥。而得到2.51g之黑色粉末樹脂。所得之聚合物相當於式(1-1)。藉由GPC以聚苯乙烯換算測定之重量平均分子量Mw為5,900,多分散度Mw/Mn為2.19。
於二口燒瓶放入8.00g之化合物1、2.08g之苯甲醛(岸田化學股份有限公司製)、28.39g之丙二醇單甲基醚乙酸酯、7.10g之N-甲基-2-吡咯啶酮(關東化學股份有限
公司製)、1.13g之甲烷磺酸(東京化成工業股份有限公司製)。然後加熱至150℃,約迴流攪拌20小時。反應結束後以丙二醇單甲基醚乙酸酯20.49g稀釋,將沉澱物藉由過濾去除。將回收之濾液於甲醇溶液中滴下,使其再沉澱。將所得之沉澱物進行吸引過濾,將濾物於60℃進行一晚減壓乾燥。而得到6.42g之灰色粉末樹脂。所得之聚合物相當於式(1-2)。藉由GPC以聚苯乙烯換算測定之重量平均分子量Mw為16,100,多分散度Mw/Mn為3.12。
於二口燒瓶放入8.00g之化合物1、3.06g之1-萘醛(東京化成工業股份有限公司製)、32.83g之丙二醇單甲基醚乙酸酯、8.21g之N-甲基-2-吡咯啶酮(關東化學股份有限公司製)、2.26g之甲烷磺酸(東京化成工業股份有限公司製)。然後加熱至150℃,約迴流攪拌20小時。反應結束後,以丙二醇單甲基醚乙酸酯19.37g稀釋,將沉澱物藉由過濾去除。將回收之濾液於甲醇溶液中滴下,使其再沉澱。將所得之沉澱物進行吸引過濾,將濾物於60℃進行一晚減壓乾燥。而得到6.58g之灰色粉末樹脂。所得之聚合物相當於式(1-3)。藉由GPC以聚苯乙烯換算測定之重量平均分子量Mw為7,500,多分散度Mw/Mn為2.02。
於二口燒瓶放入9.00g之化合物1、3.97g之9-芴酮(東京化成工業股份有限公司製)、10.56g之丙二醇單甲基醚乙酸酯、4.53g之N-甲基-2-吡咯啶酮(關東化學股份有限公司製)、2.12g之甲烷磺酸(東京化成工業股份有限公司製)。然後加熱至150℃,約迴流攪拌63小時。反應結束後,以丙二醇單甲基醚乙酸酯34.68g稀釋,將沉澱物藉由過濾去除。將回收之濾液於甲醇溶液中滴下,使其再沉澱。將所得之沉澱物進行吸引過濾,將濾物於60℃進行一晚減壓乾燥。而得到5.45g之灰色粉末樹脂。所得之聚合物相當於式(1-5)。藉由GPC以聚苯乙烯換算測定之重量平均分子量Mw為3,100,多分散度Mw/Mn為1.51。
於500mL茄型燒瓶放入30.00g之咔唑(東京化成工業股份有限公司製)、41.68g之1-芘羧醛(Aldrich製)、117.76g之丙二醇單甲基醚乙酸酯、6.83g之p-甲苯磺酸一水合物(東京化成工業股份有限公司製)。然後加熱至150℃,約迴流攪拌1小時。反應結束後,以520.49g之丙二醇單甲基醚乙酸酯稀釋,將沉澱物藉由過濾去除。將回收之濾液於甲醇溶液中滴下,使其再沉澱。將所得之沉澱物進行吸引過濾,將濾物於60℃進行一晚減壓乾燥。而得到71.6g之藍色粉末咔唑樹脂。所得之聚
合物相當於式(5-1)。藉由GPC以聚苯乙烯換算測定之重量平均分子量Mw為2,600,多分散度Mw/Mn為1.62。
於合成例1所得之1.0g樹脂(式(1-1)),混合0.001g之Megafac R-30N作為界面活性劑,溶解於1.10g之丙二醇單甲基醚乙酸酯、8.14g之環己酮,進行過濾,調製藉由多層膜之光微影製程所使用之光阻下層膜形成組成物的溶液。
於合成例2所得之1.0g樹脂(式(1-2)),混合0.001g之Megafac R-30N作為界面活性劑,溶解於1.10g之丙二醇單甲基醚乙酸酯、8.14g之環己酮,進行過濾,調製藉由多層膜之光微影製程所使用之光阻下層膜形成組成物的溶液。
於合成例3所得之1.0g樹脂(式(1-3)),混合0.001g之Megafac R-30N作為界面活性劑,溶解於1.10g之丙二醇單甲基醚乙酸酯、8.14g之環己酮,進行過濾,調製藉由多層膜之光微影製程所使用之光阻下層膜形成組成物的溶液。
於合成例4所得之1.0g樹脂(式(1-5)),混合0.001g之Megafac R-30N作為界面活性劑,溶解於1.10g之丙二醇單甲基醚乙酸酯、8.14g之環己酮,進行過濾,調製藉由多層膜之光微影製程所使用之光阻下層膜形成組成物的溶液。
於比較合成例1所得之1.0g樹脂(式(5-1)),混合0.001g之Megafac R-30N作為界面活性劑,溶解於1.10g之丙二醇單甲基醚乙酸酯、8.14g之環己酮,進行過濾,調製藉由多層膜之光微影製程所使用之光阻下層膜形成組成物的溶液。
將於實施例1~4及比較例1調製之光阻下層膜形成組成物的溶液分別使用旋轉塗佈機,塗佈在矽晶圓上,於熱板上240℃燒成1分鐘,然後400℃燒成1分鐘,形成
光阻下層膜(膜厚0.08μm)。係將此等光阻下層膜使用在光阻之溶劑即浸漬乳酸乙酯、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、及環己酮。此等光阻下層膜係不溶於此等溶劑。
將於實施例1~4、比較例1調製之光阻下層膜形成組成物的溶液分別使用旋轉塗佈機,塗佈在矽晶圓上。於熱板上240℃燒成1分鐘,然後400℃燒成1分鐘(實施例10~12為400℃ 2分鐘),形成光阻下層膜(膜厚0.05μm)。將此等之光阻下層膜使用分光橢偏儀,測定於波長193nm及248nm之折射率(n值)及光學吸光係數(k值,亦稱為衰減係數)。將結果示於表1。
乾式蝕刻速度之測定所使用之蝕刻機及蝕刻氣體係使用以下者。
RIE-10NR(Samco製):CF4
將於實施例1~4、比較例1調製之光阻下層膜形成組成物的溶液分別使用旋轉塗佈機,塗佈在矽晶圓上。於熱板上240℃燒成1分鐘,然後400℃燒成1分鐘,形成光阻下層膜(膜厚0.20μm)。又,未進行240℃燒成,於400℃燒成90秒,而形成光阻下層膜(膜厚0.20μm)。使用CF4氣體作為蝕刻氣體,測定乾式蝕刻速度,進行實施例1~4與比較例1之光阻下層膜的乾式蝕刻速度的比較。將結果示於表2。乾式蝕刻速度比係(光阻下層膜)/(KrF光阻)之乾式蝕刻速度比。
將於實施例1~4、比較例1調製之光阻下層膜形成組成物的溶液分別使用旋轉塗佈機,塗佈在矽晶圓上,於熱板上400℃燒成90秒,形成光阻下層膜(膜厚
0.25μm)。將所得之膜從室溫(約20℃)於一分鐘以每10℃的比例進行昇溫加熱,於大氣中進行熱重量分析,追蹤重量減少之隨時間的變化。將結果示於表3。
實施例2~實施例4由於於500℃重量減之測定觀測到差異,故作為至500℃為止之測定數據。
昇華物量的測定係使用國際公開WO2007/111147小冊所記載之昇華物量測定裝置來實施。於直徑4英寸之矽晶圓基板,將於實施例1~4及比較例1調製之光阻下層膜形成組成物分別進行塗佈,未燒成240℃燒成評估樣品與300℃燒成評估樣品,於240℃燒成前處理後以300℃燒成評估之樣品,以240℃燒成1分鐘,形成光阻下層膜(膜厚0.05μm)。將塗佈光阻下層膜之晶圓設定在熱板一體化之昇華物量測定裝置,烘烤120秒,將昇華物捕集在QCM(Quartz Crystal Microbalance)感應器,亦即形
成電極之水晶振盪器。QCM感應器,可利用於水晶振盪器的表面(電極)附著昇華物與因應其質量,變化水晶振盪器的頻率的(下降)性質,來測定微量的質量變化。
詳細之測定順序係如以下。將昇華物量測定裝置之熱板昇溫至240℃或300℃,將泵流量設定在1m3/s,最初之60秒係為了裝置安定化而放置。然後立即將被覆光阻下層膜之晶圓從滑道口迅速乘上熱板,進行從60秒之時間點至180秒之時間點(120秒)之昇華物的捕集。
尚,於成為前述昇華物量測定裝置之QCM感應器與捕集漏斗部分的連接之氣流附體(Flow Attachment)(檢出部分),未附噴嘴直接使用,因此,與感應器(水晶振盪器)的距離從30mm之腔單元(Chamber unit)的流路(口徑:32mm),氣流未受到限制流入。又,QCM感應器中,使用將矽與鋁作為主成分之材料(AlSi)作為電極,使用水晶振盪器之直徑(感應器直徑)為14mm、水晶振盪器表面之電極直徑為5mm、共振頻率為9MHz者。
將所得之頻率變化從測定所使用之水晶振盪器的固有值換算成克,揭示塗佈光阻下層膜之晶圓1片的昇華物量與時間經過的關係。表4中,將表示實施例1~4及比較例1之從0秒至180秒為止之測定裝置的昇華物量作為昇華物量及昇華物量比記載。尚,括號內之數值為昇華物量比,所謂昇華物量比,係將從比較例1之下層膜(300℃燒成膜)所發生之昇華移量定為1,以經規格化
之值表示。
將於實施例1及比較例1調製之光阻下層膜形成組成物的溶液分別使用旋轉塗佈機,塗佈在矽晶圓上,於熱板上240℃燒成1分鐘,然後400℃燒成1分鐘,形成光阻下層膜(膜厚0.34μm)。將測定此等之面內均一性的結果示於表5。
從實施例1所得之光阻下層膜表示高度塗佈均一性。
本發明可提供一種未引起與光阻層的互混,具有高度乾式蝕刻耐性,具有高度耐熱性,昇華物量較低之光微影用光阻下層膜。
Claims (11)
- 一種光阻下層膜形成組成物,其係包含含下述式(1)表示之單位構造的聚合物,
- 如請求項1之光阻下層膜形成組成物,其中,式(1)中,A係從具有吲哚并咔唑構造之化合物所衍生之2價基。
- 如請求項2之光阻下層膜形成組成物,其中,取代具有吲哚并咔唑構造之化合物的稠環上之氫原子的芳香族基為苯基。
- 如請求項1之光阻下層膜形成組成物,其中,式(1)中,A係從式(2)表示之化合物所衍生之2價基,
- 如請求項4之光阻下層膜形成組成物,其中,式(2)表示之化合物係將吲哚與苄基於酸化合物的存在下使其反應所得之反應物。
- 如請求項1~請求項5中任一項之光阻下層膜形成組成物,其係進一步包含交聯劑。
- 如請求項1~請求項6中任一項之光阻下層膜形成組成物,其係進一步包含酸及/或酸產生劑。
- 一種光阻下層膜之製造方法,其係藉由將如請求項1~請求項7中任一項之光阻下層膜形成組成物塗佈在半導體基板上進行燒成而獲得。
- 一種半導體裝置之製造方法,其係包含:於半導體基板上由如請求項1~請求項7中任一項之光阻下層膜形成組成物形成光阻下層膜之步驟、於其上形成光阻膜之步驟、藉由光或電子束之照射與顯影形成光阻圖型之步驟、藉由經形成之光阻圖型蝕刻該光阻下層膜之步驟、及藉由 經圖型化之光阻下層膜加工半導體基板之步驟。
- 一種半導體裝置之製造方法,其係包含:於半導體基板上由如請求項1~請求項7中任一項之光阻下層膜形成組成物形成光阻下層膜之步驟、於其上形成硬遮罩之步驟、進而於其上形成光阻膜之步驟、藉由光或電子束之照射與顯影形成光阻圖型之步驟、藉由經形成之光阻圖型蝕刻該硬遮罩之步驟、藉由經圖型化之硬遮罩蝕刻該光阻下層膜之步驟、及藉由經圖型化之光阻下層膜加工半導體基板之步驟。
- 一種具有式(1)表示之單位構造的聚合物,
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KR102432622B1 (ko) * | 2016-09-01 | 2022-08-16 | 닛산 가가쿠 가부시키가이샤 | 트리아릴디아민함유 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물 |
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JP6781410B2 (ja) | 2020-11-04 |
US20220404707A1 (en) | 2022-12-22 |
KR20180087331A (ko) | 2018-08-01 |
TWI765872B (zh) | 2022-06-01 |
US20230324802A1 (en) | 2023-10-12 |
KR102634064B1 (ko) | 2024-02-07 |
CN108292098B (zh) | 2022-06-17 |
US20180356732A1 (en) | 2018-12-13 |
WO2017094780A1 (ja) | 2017-06-08 |
JPWO2017094780A1 (ja) | 2018-10-18 |
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