TW201504384A - Adhesive sheet and dicing die bonding film - Google Patents

Adhesive sheet and dicing die bonding film Download PDF

Info

Publication number
TW201504384A
TW201504384A TW103119213A TW103119213A TW201504384A TW 201504384 A TW201504384 A TW 201504384A TW 103119213 A TW103119213 A TW 103119213A TW 103119213 A TW103119213 A TW 103119213A TW 201504384 A TW201504384 A TW 201504384A
Authority
TW
Taiwan
Prior art keywords
molecular weight
component
spherical alumina
sheet according
alumina filler
Prior art date
Application number
TW103119213A
Other languages
Chinese (zh)
Other versions
TWI649391B (en
Inventor
Yuta Kimura
Sadahito Misumi
Kenji Onishi
Yuichiro Shishido
Yuki Sugo
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW201504384A publication Critical patent/TW201504384A/en
Application granted granted Critical
Publication of TWI649391B publication Critical patent/TWI649391B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/16—Solid spheres
    • C08K7/18—Solid spheres inorganic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The present invention provides an adhesive sheet and a dicing die bonding film, having high reliability and excellent unevenness conformability. The present invention relates to an adhesive sheet comprising spherical alumina fillers and resin components, said resin ingredients include a component of high molecular weight (A) and a component of low molecular weight (B). With respect to 100 wt% of adhesive sheet, the aforementioned spherical alumina fillers has a content of 78 to 88 wt%, the average particle size of said spherical alumina fillers is 2 to 9 [mu] meter, the specific surface area is 0.8 to 8.0 m<SP>2</SP>/g, the weight ratio calculated by diving the weight of the aforementioned high molecular weight component(A) by the total weight of the high molecular weight component (A) and the low molecular weight component (B) is 0.03 to 0.25.

Description

接著薄片、及切割‧晶粒接合薄膜 Next, the sheet, and the cut ‧ grain bonded film

本發明關於接著薄片、及切割‧晶粒接合薄膜。 The present invention relates to a follow-up sheet and a dicing die-bonding film.

出於半導體元件的應用方面的需求，高容量化、資料處理速度的高速化推進，因而自半導體元件的發熱量增大。因此，迫切需要應對發熱量增大的對策。 In order to increase the capacity and data processing speed, the heat generation from the semiconductor element is increased due to the demand for the application of the semiconductor element. Therefore, there is an urgent need to cope with measures to increase the amount of heat generation.

作為半導體封裝體的散熱方法，如有：將密封樹脂薄型化或高導熱係數化來進行散熱的方法；嵌入散熱器等散熱材料而介由其進行散熱的方法；自介由接著劑與半導體晶片接著的基板、引線框等進行散熱的方法等。 As a method of dissipating heat of a semiconductor package, there is a method of thinning a sealing resin or a high thermal conductivity to dissipate heat; a method of dissipating a heat dissipating material such as a heat sink and dissipating heat therethrough; and an adhesive and a semiconductor wafer A method of dissipating heat such as a substrate or a lead frame.

自密封樹脂進行散熱的方法由於密封樹脂層較厚而難以高效地散熱。另外，嵌入散熱器的方法不利於小型化(高積體化)，能夠使用的封裝體有限。另一方面，通過將用於接著半導體晶片和基板的接著劑高導熱化，自半導體晶片產生的熱釋放至基板，從而能夠高效地散熱。 The method of dissipating heat from the self-sealing resin is difficult to efficiently dissipate heat because the sealing resin layer is thick. In addition, the method of embedding the heat sink is disadvantageous for miniaturization (high integration), and the package that can be used is limited. On the other hand, by making the adhesive for the semiconductor wafer and the substrate highly thermally conductive, heat generated from the semiconductor wafer is released to the substrate, so that heat can be efficiently dissipated.

作為將接著劑高導熱化的方法，已知有配混高導熱性的填料的方法。作為高導熱性的填料，有多種多樣的填料，例如有氧化鋁填料、氫氧化鋁、氮化鋁等。其中，氧 化鋁填料由於較廉價且化學穩定性高、導熱係數高，因而經常被使用。 As a method of making the adhesive highly conductive, a method of compounding a filler having high thermal conductivity is known. As a filler having high thermal conductivity, there are various fillers such as alumina filler, aluminum hydroxide, aluminum nitride, and the like. Among them, oxygen Aluminum fillers are often used because they are relatively inexpensive, have high chemical stability, and have high thermal conductivity.

另一方面，氫氧化鋁由於導熱性比氧化鋁填料低，會因加熱而形成鋁並產生水，因此存在導致可靠性降低的擔心。 On the other hand, since aluminum hydroxide has a lower thermal conductivity than an alumina filler, aluminum is formed by heating to generate water, which may cause a decrease in reliability.

另外，氮化鋁的化學穩定性低，與空氣中的水反應而產生氫氧化鋁並生成氨。接著劑有時在切割步驟中被曝露於大量水中，而且經常長時間地放置於常規氣氛下，因此需要對水、空氣穩定，但氮化鋁從上述特性來看很難說適用於接著劑。 In addition, aluminum nitride has low chemical stability and reacts with water in the air to produce aluminum hydroxide and form ammonia. The subsequent agent is sometimes exposed to a large amount of water in the cutting step, and is often placed in a conventional atmosphere for a long period of time, and therefore needs to be stable to water and air, but aluminum nitride is hardly said to be suitable for an adhesive from the above characteristics.

關於接著劑的形狀，一直以來，使用銀漿等液態的接著劑。但是，將比50μm薄的由半導體晶圓得到的半導體晶片介由糊狀的接著劑接著於基板時，有時發生半導體晶片的傾斜、或突出、接著劑向晶片上部環抱等。因此，糊狀的接著劑不利於高積體化的半導體元件的製造。另外，糊狀的接著劑在固化時容易產生空隙，容易產生由空隙導致的可靠性降低、散熱性降低等問題。 Regarding the shape of the adhesive, a liquid adhesive such as silver paste has been conventionally used. However, when a semiconductor wafer obtained from a semiconductor wafer thinner than 50 μm is adhered to a substrate via a paste-like adhesive, the semiconductor wafer may be inclined or protruded, and the adhesive may be surrounded by the upper portion of the wafer. Therefore, a paste-like adhesive is disadvantageous for the manufacture of a highly integrated semiconductor element. Further, the paste-like adhesive tends to generate voids during curing, and it is easy to cause problems such as a decrease in reliability due to voids and a decrease in heat dissipation.

在這種背景下，例如，專利文獻1~3中提出了配混有氧化鋁填料的高導熱性的薄片狀接著劑。 Under the circumstances, for example, Patent Documents 1 to 3 propose a high thermal conductivity sheet-like adhesive compounded with an alumina filler.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

專利文獻1：日本特開2012-186360號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2012-186360

專利文獻2：日本特開2012-186361號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2012-186361

專利文獻3：日本特開2011-23607號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 2011-23607

然而，專利文獻1~3的薄片狀接著劑僅能夠接著於較平坦的被著體，用途受到限定。換言之，對凹凸的追隨性(凹凸填埋性)尚有改善的餘地。另外，近年來，接著劑所需的可靠性的水準日益增高，因此也需要對可靠性進行研究。 However, the sheet-like adhesives of Patent Documents 1 to 3 can only be followed by a relatively flat object, and their use is limited. In other words, there is still room for improvement in the followability of the unevenness (the unevenness of the landfill). In addition, in recent years, the level of reliability required for an adhesive has been increasing, and therefore reliability has also been studied.

本發明的目的在於，解決前述問題，提供可靠性高且凹凸填埋性優異的接著薄片、及切割‧晶粒接合薄膜。 An object of the present invention is to solve the above problems and to provide a succeeding sheet and a dicing die-bonding film which are excellent in reliability and excellent in uneven landfill.

本發明關於一種接著薄片，其包含球狀氧化鋁填料和樹脂成分，所述樹脂成分包含高分子量成分(A)和低分子量成分(B)，相對於100重量份接著薄片，前述球狀氧化鋁填料的含量為78~88重量份，前述球狀氧化鋁填料的平均粒徑為2~9μm，比表面積為0.8~8.0m2/g，由前述高分子量成分(A)的重量/前述高分子量成分(A)和前述低分子量成分(B)的總重量表示的重量比為0.03~0.25。 The present invention relates to a back sheet comprising a spherical alumina filler and a resin component, the resin component comprising a high molecular weight component (A) and a low molecular weight component (B), the spherical alumina being relative to 100 parts by weight of the succeeding flakes The content of the filler is 78 to 88 parts by weight, and the spherical alumina filler has an average particle diameter of 2 to 9 μm and a specific surface area of 0.8 to 8.0 m 2 /g, and the weight of the high molecular weight component (A) or the aforementioned high molecular weight The weight ratio of the total weight of the component (A) and the aforementioned low molecular weight component (B) is from 0.03 to 0.25.

若僅僅將球狀氧化鋁填料高填充化，則無法充分提高耐濕回流焊性，而且會降低填埋性。另一方面，本發明的接著薄片通過使用滿足特定的平均粒徑且滿足特定的比表面積的球狀氧化鋁填料，並將由高分子量成分(A)的重 量/高分子量成分(A)和低分子量成分(B)的總重量表示的重量比調整為特定範圍，從而良好地得到高溫下的流動性，得到優異的凹凸填埋性。另外，也得到優異的耐濕回流焊性。 When only the spherical alumina filler is highly filled, the wet reflow resistance cannot be sufficiently improved, and the landfill property is lowered. On the other hand, the succeeding sheet of the present invention uses a spherical alumina filler which satisfies a specific average particle diameter and satisfies a specific specific surface area, and will be heavy by the high molecular weight component (A). The weight ratio expressed by the total weight of the amount/high molecular weight component (A) and the low molecular weight component (B) is adjusted to a specific range, and fluidity at a high temperature is favorably obtained, and excellent uneven depositability is obtained. In addition, excellent moisture reflow resistance is also obtained.

較佳的是，在前述球狀氧化鋁填料的細微性分佈中，存在2個以上的峰，第一峰存在於0.2~0.8μm的粒徑範圍，第二峰存在於3~15μm的粒徑範圍，第二峰的粒徑/第一峰的粒徑為7~15。由此，能夠將球狀氧化鋁填料高填充化，並進一步提高填埋性。 Preferably, in the fine distribution of the spherical alumina filler, there are two or more peaks, the first peak exists in a particle diameter range of 0.2 to 0.8 μm, and the second peak exists in a particle diameter of 3 to 15 μm. The range, the particle diameter of the second peak / the particle diameter of the first peak is 7 to 15. Thereby, the spherical alumina filler can be highly filled, and the landfill property can be further improved.

較佳的是，前述球狀氧化鋁填料用矽烷偶合劑進行了處理。由此，球狀氧化鋁填料的分散性變得良好，球狀氧化鋁填料的高填充化成為可能。另外，能夠進一步提高填埋性。 Preferably, the spherical alumina filler is treated with a decane coupling agent. Thereby, the dispersibility of the spherical alumina filler becomes good, and the filling of the spherical alumina filler becomes possible. In addition, the landfillability can be further improved.

較佳的是，前述低分子量成分(B)至少包含環氧樹脂和酚醛樹脂。 Preferably, the low molecular weight component (B) contains at least an epoxy resin and a phenol resin.

較佳的是，前述環氧樹脂包含液態的雙酚型環氧樹脂，由前述液態的雙酚型環氧樹脂的重量/前述低分子量成分(B)的重量表示的重量比為0.1~0.6。由此，能夠進一步提高填埋性。 Preferably, the epoxy resin comprises a liquid bisphenol type epoxy resin, and the weight ratio of the weight of the liquid bisphenol type epoxy resin to the weight of the low molecular weight component (B) is 0.1 to 0.6. Thereby, the landfillability can be further improved.

較佳的是，前述高分子量成分(A)為丙烯酸類橡膠。 Preferably, the high molecular weight component (A) is an acrylic rubber.

較佳的是，前述高分子量成分(A)的玻璃化轉變溫度為0℃以下。 It is preferred that the high molecular weight component (A) has a glass transition temperature of 0 ° C or lower.

較佳的是，前述球狀氧化鋁填料的最大粒徑為20μm 以下。由此，能夠得到良好的填埋性。 Preferably, the spherical alumina filler has a maximum particle diameter of 20 μm. the following. Thereby, good landfillability can be obtained.

較佳的是，前述接著薄片在固化前的130℃下的熔融黏度為5~5000Pa．s。 Preferably, the melt density of the foregoing sheet at 130 ° C before curing is 5 to 5000 Pa. s.

較佳的是，前述接著薄片在固化後的玻璃化轉變溫度為100℃以上，固化後的260℃下的拉伸儲能模量為10~1000MPa。 Preferably, the glass transition temperature of the subsequent sheet after curing is 100 ° C or higher, and the tensile storage modulus at 260 ° C after curing is 10 to 1000 MPa.

較佳的是，前述接著薄片在固化前的拉伸試驗時的斷裂伸長率為10~200%。較佳的是，前述接著薄片的厚度為30μm以下。 Preferably, the elongation at break of the subsequent sheet in the tensile test before curing is 10 to 200%. Preferably, the thickness of the subsequent sheet is 30 μm or less.

較佳的是，前述接著薄片用作晶粒接合薄膜。 Preferably, the aforementioned succeeding sheet is used as a die-bonding film.

本發明還關於一種切割‧晶粒接合薄膜，其在帶黏著劑層的基材的前述黏著劑層上層疊有前述接著薄片。 The present invention also relates to a dicing die-bonding film in which the aforementioned bonding sheet is laminated on the aforementioned adhesive layer of a substrate with an adhesive layer.

根據本發明，能夠提供可靠性高且凹凸填埋性優異的接著薄片、及切割‧晶粒接合薄膜。 According to the present invention, it is possible to provide a succeeding sheet having high reliability and excellent unevenness and landfill, and a dicing die-bonding film.

1‧‧‧基材 1‧‧‧Substrate

2‧‧‧黏著劑層 2‧‧‧Adhesive layer

3、3’‧‧‧接著薄片 3, 3'‧‧‧ followed by thin slices

4‧‧‧半導體晶圓 4‧‧‧Semiconductor wafer

5‧‧‧半導體晶片 5‧‧‧Semiconductor wafer

6‧‧‧被著體 6‧‧‧Being

7‧‧‧接合線 7‧‧‧bonding line

8‧‧‧密封樹脂 8‧‧‧ Sealing resin

10、12‧‧‧切割‧晶粒接合薄膜 10,12‧‧‧Cutting ‧ die bonding film

11‧‧‧切割薄膜 11‧‧‧ cutting film

圖1為本發明的一個實施方式的切割‧晶粒接合薄膜的截面示意圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a dicing die-bonding film according to an embodiment of the present invention.

圖2為本發明的另一個實施方式的切割‧晶粒接合薄膜的截面示意圖。 2 is a schematic cross-sectional view showing a dicing die-bonding film according to another embodiment of the present invention.

圖3為示出半導體裝置的一種製造步驟的圖。 FIG. 3 is a view showing a manufacturing step of a semiconductor device.

〔實施發明之的最佳形態〕 [Best Practice for Carrying Out the Invention] 〔接著薄片〕 [following the sheet]

本發明的接著薄片包含球狀氧化鋁填料。 The back sheet of the present invention comprises a spherical alumina filler.

球狀氧化鋁填料的平均粒徑為2μm以上、較佳為3μm以上。通過為2μm以上，可良好地得到高溫下的流動性，可得到優異的填埋性。另外，球狀氧化鋁填料的平均粒徑為9μm以下、較佳為8μm以下。通過為9μm以下，可得到優異的耐濕回流焊性。 The spherical alumina filler has an average particle diameter of 2 μm or more, preferably 3 μm or more. When it is 2 μm or more, the fluidity at a high temperature can be favorably obtained, and excellent landfill properties can be obtained. Further, the spherical alumina filler has an average particle diameter of 9 μm or less, preferably 8 μm or less. When it is 9 μm or less, excellent moisture reflow resistance can be obtained.

需要說明的是，球狀氧化鋁填料的平均粒徑可以通過實施例中記載的方法測定。 It should be noted that the average particle diameter of the spherical alumina filler can be measured by the method described in the examples.

球狀氧化鋁填料的最大粒徑較佳為20μm以下。為20μm以下時，接著薄片的薄膜化成為可能，散熱效果也提高。 The maximum particle diameter of the spherical alumina filler is preferably 20 μm or less. When it is 20 μm or less, the thin film formation of the sheet becomes possible, and the heat dissipation effect is also improved.

在球狀氧化鋁填料的細微性分佈中，較佳存在2個以上的峰。具體而言，較佳的是，第一峰存在於0.2~0.8μm的粒徑範圍，第二峰存在於3~15μm的粒徑範圍。由此，可以在形成第二峰的球狀氧化鋁填料之間(間隙中)填充形成第一峰的球狀氧化鋁填料，因此能夠將球狀氧化鋁填料高填充。 In the fine distribution of the spherical alumina filler, it is preferred to have two or more peaks. Specifically, it is preferred that the first peak exists in a particle diameter range of 0.2 to 0.8 μm, and the second peak exists in a particle diameter range of 3 to 15 μm. Thereby, the spherical alumina filler which forms the first peak can be filled between the spherical alumina fillers forming the second peak (in the gap), so that the spherical alumina filler can be highly filled.

第一峰的粒徑不足0.2μm時，存在接著薄片的黏度變得過高而無法追隨被著體的凹凸的傾向。第一峰的粒徑超過0.8μm時，球狀氧化鋁填料的高填充化困難。 When the particle diameter of the first peak is less than 0.2 μm, the viscosity of the subsequent sheet tends to be too high to follow the irregularities of the object. When the particle diameter of the first peak exceeds 0.8 μm, it is difficult to increase the filling of the spherical alumina filler.

另外，第二峰的粒徑不足3μm時，球狀氧化鋁填料 的高填充化困難。另外，存在接著薄片的黏度變得過高而無法追隨被著體的凹凸的傾向。第二峰的粒徑超過15μm時，接著薄片的薄膜化變得困難。需要說明的是，球狀氧化鋁填料的細微性分佈可以通過實施例中記載的方法測定。 In addition, when the particle diameter of the second peak is less than 3 μm, the spherical alumina filler The difficulty of high filling is difficult. Further, there is a tendency that the viscosity of the sheet becomes too high to follow the unevenness of the object. When the particle diameter of the second peak exceeds 15 μm, it becomes difficult to form a thin film. It should be noted that the fineness distribution of the spherical alumina filler can be measured by the method described in the examples.

第二峰的粒徑/第一峰的粒徑較佳為7~15。第一峰的粒徑與第二峰的粒徑相近時，無法充分得到高填充效果，而第二峰的粒徑/第一峰的粒徑的值為上述範圍時，能夠充分得到高填充效果。另外，接著薄片對被著體的凹凸追隨性變得良好。 The particle diameter of the second peak / the particle diameter of the first peak is preferably from 7 to 15. When the particle diameter of the first peak is close to the particle diameter of the second peak, a high filling effect cannot be sufficiently obtained, and when the particle diameter of the second peak/particle diameter of the first peak is in the above range, a high filling effect can be sufficiently obtained. . Further, the subsequent followability of the sheet to the object is improved.

需要說明的是，為了使球狀氧化鋁填料的細微性分佈中存在2個以上的峰，配混平均粒徑不同的2種以上球狀氧化鋁填料即可。 In addition, in order to have two or more peaks in the fineness distribution of the spherical alumina filler, two or more kinds of spherical alumina fillers having different average particle diameters may be blended.

球狀氧化鋁填料的比表面積為0.8m2/g以上、較佳為0.9m2/g以上。通過為0.8m2/g以上，可得到良好的凹凸追隨性。另外，球狀氧化鋁填料的比表面積為8.0m2/g以下、較佳為7.5m2/g以下。通過為8.0m2/g以下，接著薄片的薄膜化成為可能。 The spherical alumina filler has a specific surface area of 0.8 m 2 /g or more, preferably 0.9 m 2 /g or more. When the pass ratio is 0.8 m 2 /g or more, good unevenness followability can be obtained. Further, the spherical alumina filler has a specific surface area of 8.0 m 2 /g or less, preferably 7.5 m 2 /g or less. When it is 8.0 m 2 /g or less, it becomes possible to thin the sheet.

需要說明的是，球狀氧化鋁填料的比表面積可以通過實施例中記載的方法測定。 It should be noted that the specific surface area of the spherical alumina filler can be measured by the method described in the examples.

球狀氧化鋁填料較佳用矽烷偶合劑進行了處理(前處理)。由此，球狀氧化鋁填料的分散性變得良好，球狀氧化鋁填料的高填充化成為可能。 The spherical alumina filler is preferably treated with a decane coupling agent (pretreatment). Thereby, the dispersibility of the spherical alumina filler becomes good, and the filling of the spherical alumina filler becomes possible.

作為矽烷偶合劑，沒有特別限定，從能夠將球狀氧化 鋁填料高填充化並進一步提高填埋性的理由出發，能夠適宜地使用環氧矽烷系矽烷偶合劑、二甲基矽烷系矽烷偶合劑、甲基系矽烷偶合劑、苯基系矽烷偶合劑、苯胺系矽烷偶合劑、甲基丙烯醯基矽烷系矽烷偶合劑。其中，從提高球狀氧化鋁填料的分散性並提高接著薄片的流動性的理由出發，較佳環氧矽烷系矽烷偶合劑、甲基丙烯醯基矽烷系矽烷偶合劑。 The decane coupling agent is not particularly limited, and is capable of oxidizing spherically For the reason that the aluminum filler is highly filled and the landfill property is further improved, an epoxy decane decane coupling agent, a dimethyl decane decane coupling agent, a methyl decane coupling agent, a phenyl decane coupling agent, or the like can be suitably used. An aniline decane coupling agent or a methacryl decyl decane decane coupling agent. Among them, an epoxy decane decane coupling agent or a methacryl decyl decane decane coupling agent is preferred from the viewpoint of improving the dispersibility of the spherical alumina filler and improving the fluidity of the subsequent sheet.

作為環氧矽烷系矽烷偶合劑，可列舉出2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷等。作為二甲基矽烷系矽烷偶合劑，可列舉出二甲基二甲氧基矽烷、二甲基二乙氧基矽烷等。作為甲基系矽烷偶合劑，可列舉出甲基三甲氧基矽烷、甲基三乙氧基矽烷等。作為苯基系矽烷偶合劑，可列舉出苯基三甲氧基矽烷、苯基三乙氧基矽烷等。 Examples of the epoxy decane-based decane coupling agent include 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, 3-glycidoxypropyltrimethoxydecane, and 3-epoxypropyl. Oxypropyltriethoxydecane, 3-glycidoxypropylmethyldimethoxydecane, 3-glycidoxypropylmethyldiethoxydecane, and the like. Examples of the dimethyl decane decane coupling agent include dimethyl dimethoxy decane and dimethyl diethoxy decane. Examples of the methyl decane coupling agent include methyltrimethoxydecane and methyltriethoxydecane. Examples of the phenyl decane coupling agent include phenyltrimethoxydecane and phenyltriethoxysilane.

作為苯胺系矽烷偶合劑，可列舉出N-苯基-3-胺基丙基三甲氧基矽烷等。作為甲基丙烯醯基矽烷系矽烷偶合劑，可列舉出3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷等。 Examples of the aniline decane coupling agent include N-phenyl-3-aminopropyltrimethoxydecane. Examples of the methacryl decyl decane decane coupling agent include 3-methyl propylene methoxy propyl methyl dimethoxy decane, 3-methyl propylene methoxy propyl trimethoxy decane, and 3- Methyl propylene methoxy propyl methyl diethoxy decane, 3-methyl propylene methoxy propyl triethoxy decane, and the like.

作為用矽烷偶合劑處理球狀氧化鋁填料的方法，沒有特別限定，可列舉出：在溶劑中將球狀氧化鋁填料與矽烷 偶合劑混合的濕式法；在氣相中將球狀氧化鋁填料和矽烷偶合劑進行處理的幹式法等。 The method for treating the spherical alumina filler with a decane coupling agent is not particularly limited, and examples thereof include a spherical alumina filler and decane in a solvent. A wet method in which a coupling agent is mixed; a dry method in which a spherical alumina filler and a decane coupling agent are treated in a gas phase, and the like.

對矽烷偶合劑的處理量沒有特別限定，相對於100重量份球狀氧化鋁填料，較佳用0.05~5重量份矽烷偶合劑進行處理。 The treatment amount of the decane coupling agent is not particularly limited, and it is preferably treated with 0.05 to 5 parts by weight of a decane coupling agent per 100 parts by weight of the spherical alumina filler.

相對於100重量份接著薄片，球狀氧化鋁填料的含量為78重量份以上、較佳為80重量份以上。通過為78重量份以上，可得到良好的導熱性。另外，球狀氧化鋁填料的含量為88重量份以下、較佳為84重量份以下。通過為88重量份以下，可得到良好的填埋性。 The content of the spherical alumina filler is 78 parts by weight or more, preferably 80 parts by weight or more based on 100 parts by weight of the subsequent sheet. When it is 78 parts by weight or more, good thermal conductivity can be obtained. Further, the content of the spherical alumina filler is 88 parts by weight or less, preferably 84 parts by weight or less. When it is 88 parts by weight or less, good landfillability can be obtained.

本發明的接著薄片包含樹脂成分，該樹脂成分包含高分子量成分(A)和低分子量成分(B)。 The succeeding sheet of the present invention contains a resin component containing a high molecular weight component (A) and a low molecular weight component (B).

高分子量成分(A)的重量平均分子量(Mw)較佳為10000以上、更佳為200000以上。為10000以上時，可得到撓性。另外，高分子量成分(A)的重量平均分子量較佳為2000000以下、更佳為1500000以下、又更佳為1000000以下。為2000000以下時，能夠將接著薄片在高溫下低黏度化，可得到良好的凹凸填埋性。 The weight average molecular weight (Mw) of the high molecular weight component (A) is preferably 10,000 or more, more preferably 200,000 or more. When it is 10,000 or more, flexibility can be obtained. Further, the weight average molecular weight of the high molecular weight component (A) is preferably 2,000,000 or less, more preferably 1.500000 or less, still more preferably 1,000,000 or less. When it is 2,000,000 or less, the subsequent sheet can be made low-viscosity at a high temperature, and good unevenness and landfillability can be obtained.

需要說明的是，重量平均分子量是利用GPC(凝膠滲透色譜法)測定並以聚苯乙烯換算而算出的值。 The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.

作為高分子量成分(A)，沒有特別限定，從玻璃化轉變溫度的調整、官能團的控制容易，通常廣泛使用的觀點出發，較佳丙烯酸類橡膠。 The high molecular weight component (A) is not particularly limited, and is preferably an acrylic rubber from the viewpoint of easy adjustment of the glass transition temperature and control of the functional group, and is generally widely used.

作為丙烯酸類橡膠，沒有特別限定，可列舉出將具有 碳數30以下、特別是碳數4~18的直鏈或支鏈的烷基的丙烯酸或甲基丙烯酸的酯中的1種或2種以上作為成分的聚合物(丙烯酸類共聚物)等。作為前述烷基，例如可列舉出甲基、乙基、丙基、異丙基、正丁基、叔丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或十二烷基等。 The acrylic rubber is not particularly limited, and examples thereof will have One or two or more kinds of polymers (acrylic copolymers) having a carbon number of 30 or less, particularly a linear or branched alkyl group of acrylic acid or methacrylic acid having a carbon number of 4 to 18 or less. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group, a t-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, a cyclohexyl group, and 2 -ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl Alkyl, or dodecyl, and the like.

另外，作為形成聚合物(丙烯酸類共聚物)的其它單體，沒有特別限定，例如可列舉出丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸或巴豆酸等各種含羧基單體；馬來酸酐或衣康酸酐等各種酸酐單體；(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸4-羥丁酯、(甲基)丙烯酸6-羥己酯、(甲基)丙烯酸8-羥辛酯、(甲基)丙烯酸10-羥癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)甲酯等各種含羥基單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺基丙酯或(甲基)丙烯醯氧基萘磺酸等各種含磺酸基單體；或2-羥乙基丙烯醯基磷酸酯等各種含磷酸基單體。 Further, the other monomer forming the polymer (acrylic copolymer) is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, and rich. Various carboxyl group-containing monomers such as horse acid or crotonic acid; various acid anhydride monomers such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, (methyl) ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, 12-hydroxy laurel (meth) acrylate Various hydroxyl-containing monomers such as esters or (4-hydroxymethylcyclohexyl)methyl acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamidoxime-2-methylpropanesulfonic acid, a variety of sulfonic acid group-containing monomers such as (meth)acrylonitrile-propanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acryloxynaphthalenesulfonic acid; or 2-hydroxyethylpropenylthio Various phosphate-containing monomers such as phosphates.

高分子量成分(A)的玻璃化轉變溫度較佳為0℃以下、更佳為-5℃以下、又更佳為-20℃以下。為0℃以下時，能夠在40~70℃這樣較低的溫度下貼附至被著體，可 容易地進行晶圓安裝。需要說明的是，在高溫下貼附至被著體時，切割薄膜由於熱而變形，因此晶圓安裝困難。高分子量成分(A)的玻璃化轉變溫度例如為-40℃以上。 The glass transition temperature of the high molecular weight component (A) is preferably 0 ° C or less, more preferably -5 ° C or less, still more preferably -20 ° C or less. When it is below 0 °C, it can be attached to the object at a lower temperature of 40 to 70 °C. Easy wafer mounting. It should be noted that when the film is attached to the object at a high temperature, the dicing film is deformed by heat, and thus the wafer mounting is difficult. The glass transition temperature of the high molecular weight component (A) is, for example, -40 ° C or higher.

高分子量成分(A)的玻璃化轉變溫度由利用差示掃描量熱計(DSC)測定的最大吸熱峰時的溫度得到。具體而言，對於要測定的試樣，使用差示掃描量熱計(TA Instruments公司製造的“Q-2000”)，在比預測的試樣的玻璃化轉變溫度(預測溫度)高約50℃的溫度下加熱10分鐘後，冷卻至比預測溫度低50℃的溫度，從而進行前處理，然後，在氮氣氣氛下以升溫速度5℃/分鐘進行升溫並測定吸熱起點溫度，將其作為玻璃化轉變溫度。 The glass transition temperature of the high molecular weight component (A) is obtained from the temperature at the maximum endothermic peak measured by a differential scanning calorimeter (DSC). Specifically, for the sample to be measured, a differential scanning calorimeter ("Q-2000" manufactured by TA Instruments) was used, which was about 50 ° C higher than the glass transition temperature (predicted temperature) of the predicted sample. After heating at a temperature of 10 minutes, the mixture was cooled to a temperature lower than the predicted temperature by 50 ° C to carry out pretreatment, and then the temperature was raised at a temperature increase rate of 5 ° C / min in a nitrogen atmosphere, and the endothermic starting temperature was measured to be vitrified. Change the temperature.

低分子量成分(B)的重量平均分子量較佳為5000以下、更佳為3000以下。為5000以下時，在高溫下低黏度化，可得到良好的凹凸填埋性。低分子量成分(B)的重量平均分子量較佳為200以上、更佳為300以上。為200以上時，可得到常溫下的穩定性。 The weight average molecular weight of the low molecular weight component (B) is preferably 5,000 or less, more preferably 3,000 or less. When the ratio is 5,000 or less, the viscosity is low at a high temperature, and good unevenness and landfillability can be obtained. The weight average molecular weight of the low molecular weight component (B) is preferably 200 or more, more preferably 300 or more. When it is 200 or more, the stability at normal temperature can be obtained.

作為低分子量成分(B)，沒有特別限定，可列舉出酚醛樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚氨酯樹脂、有機矽樹脂、熱固化性聚醯亞胺樹脂等。特別較佳較少地含有腐蝕半導體元件的離子性雜質等的環氧樹脂。另外，作為環氧樹脂的固化劑，較佳酚醛樹脂。 The low molecular weight component (B) is not particularly limited, and examples thereof include a phenol resin, an amine resin, an unsaturated polyester resin, an epoxy resin, a urethane resin, an organic oxime resin, and a thermosetting polyimide resin. It is particularly preferable to contain an epoxy resin which etches an ionic impurity or the like of the semiconductor element. Further, as the curing agent for the epoxy resin, a phenol resin is preferred.

作為環氧樹脂，沒有特別限定，例如可使用雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、芴型、苯酚酚醛清漆 型、鄰甲酚酚醛清漆型、三羥苯基甲烷型、四羥苯基乙烷型等二官能環氧樹脂或多官能環氧樹脂、或者乙內醯脲型、三縮水甘油基異氰脲酸酯型或縮水甘油胺型等環氧樹脂。其中，從在室溫下為液態且能夠賦予撓性的理由出發，較佳包含液態的雙酚型環氧樹脂。另外，從為多官能的固化樹脂，固化後的交聯密度高，能夠對接著薄片賦予良好的耐回流焊性的理由出發，較佳鄰甲酚酚醛清漆型環氧樹脂。 The epoxy resin is not particularly limited, and for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene can be used. Type, bismuth type, phenol novolac Type, o-cresol novolak type, trihydroxyphenylmethane type, tetrahydroxyphenylethane type, etc., difunctional epoxy resin or polyfunctional epoxy resin, or carbendazim type, triglycidyl isocyanurate Epoxy resin such as acid ester type or glycidylamine type. Among them, a liquid bisphenol type epoxy resin is preferably contained from the viewpoint of being liquid at room temperature and imparting flexibility. Further, from the case of a polyfunctional curable resin, the crosslink density after curing is high, and it is possible to impart good reflow resistance to the subsequent sheet, and an ortho-cresol novolac type epoxy resin is preferable.

由液態的雙酚型環氧樹脂的重量/低分子量成分(B)的重量表示的重量比較佳為0.1以上。為0.1以上時，能夠賦予在切割時或拾取時接著薄片不會破裂的水準的柔軟性。另外，可得到優異的填埋性。另外，該重量比較佳為0.6以下。為0.6以下時，能夠將接著薄片從切割薄膜良好地剝離，能夠良好地拾取。 The weight expressed by the weight of the liquid bisphenol type epoxy resin/weight of the low molecular weight component (B) is preferably 0.1 or more. When it is 0.1 or more, it is possible to impart a level of flexibility in which the sheet does not break at the time of cutting or picking up. In addition, excellent landfill properties can be obtained. Further, the weight is preferably 0.6 or less. When it is 0.6 or less, the subsequent sheet can be favorably peeled off from the dicing film, and can be picked up favorably.

本說明書中，液態是指在25℃下黏度低於5000Pa．s。需要說明的是，黏度可以使用Thermo Scientific公司製造的型號HAAKE Roto VISCO1來測定。 In this specification, liquid means that the viscosity is lower than 5000Pa at 25 ° C. s. It should be noted that the viscosity can be measured using a model HAAKE Roto VISCO1 manufactured by Thermo Scientific.

酚醛樹脂作為環氧樹脂的固化劑發揮作用，例如可列舉出苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、叔丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚醛樹脂、可溶型酚醛樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。這些酚醛樹脂當中，特別較佳苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。這是因為能夠提高半導體裝置的連接可靠性。 The phenol resin functions as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a t-butyl phenol novolak resin, and a nonyl phenol novolak resin. A phenolic resin, a soluble phenol resin, a polyhydroxy styrene such as polyparaxyl styrene or the like. Among these phenol resins, a phenol novolak resin and a phenol aralkyl resin are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.

關於環氧樹脂與酚醛樹脂的配混比例，例如，以相對於環氧樹脂成分中的環氧基1當量，酚醛樹脂中的羥基為0.5~2.0當量的方式進行配混是較佳的。更適宜為0.8~1.2當量。即，這是因為，兩者的配混比例偏離前述範圍時，無法進行充分的固化反應，固化物的特性容易劣化。 The compounding ratio of the epoxy resin to the phenol resin is preferably, for example, 1 to 2.0 equivalents based on 1 equivalent of the epoxy group in the epoxy resin component, and the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents. More suitably, it is 0.8 to 1.2 equivalents. That is, this is because when the mixing ratio of the two is out of the above range, a sufficient curing reaction cannot be performed, and the properties of the cured product are likely to deteriorate.

由高分子量成分(A)的重量/高分子量成分(A)和低分子量成分(B)的總重量表示的重量比為0.03以上。通過為0.03以上，能夠賦予柔軟且不易破裂的性質。另外，該重量比為0.25以下、較佳為0.22以下。通過為0.25以下，可良好地得到高溫下的流動性，可得到優異的凹凸填埋性。 The weight ratio represented by the weight of the high molecular weight component (A)/the total weight of the high molecular weight component (A) and the low molecular weight component (B) is 0.03 or more. When the pass ratio is 0.03 or more, it is possible to impart a property which is soft and not easily broken. Further, the weight ratio is 0.25 or less, preferably 0.22 or less. When it is 0.25 or less, fluidity at a high temperature can be favorably obtained, and excellent unevenness and landfillability can be obtained.

相對於100重量份接著薄片，樹脂成分的含量較佳為10重量份以上、更佳為12重量份以上、又更佳為16重量份以上。為10重量份以上時，可得到良好的接著薄片的成型性、填埋性、回流焊可靠性。另外，樹脂成分的含量較佳為22重量份以下、更佳為21重量份以下、又更佳為20重量份以下。為22重量份以下時，球狀氧化鋁填料的含量相對增多，可得到高導熱性。 The content of the resin component is preferably 10 parts by weight or more, more preferably 12 parts by weight or more, still more preferably 16 parts by weight or more based on 100 parts by weight of the subsequent sheet. When it is 10 parts by weight or more, moldability, landfillability, and reflow reliability of a good subsequent sheet can be obtained. Further, the content of the resin component is preferably 22 parts by weight or less, more preferably 21 parts by weight or less, still more preferably 20 parts by weight or less. When it is 22 parts by weight or less, the content of the spherical alumina filler is relatively increased, and high thermal conductivity can be obtained.

本發明的接著薄片較佳包含固化催化劑。由此，能夠促進環氧樹脂與酚醛樹脂等固化劑的熱固化。作為固化催化劑，沒有特別限定，例如可列舉出四苯基鏻四苯基硼酸鹽(商品名：TPP-K)、四苯基鏻四對甲苯基硼酸鹽(商品名：TPP-MK)、三苯基膦三苯基硼烷(商品名：TPP-S)等磷-硼系固化催化劑(均為HOKKO CHEMICAL INDUSTRY CO.,LTD.製造)。 The backsheet of the present invention preferably comprises a curing catalyst. Thereby, thermal curing of the epoxy resin and a curing agent such as a phenol resin can be promoted. The curing catalyst is not particularly limited, and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-tolyl borate (trade name: TPP-MK), and three. Phosphorus-boron curing catalysts such as phenylphosphine triphenylborane (trade name: TPP-S) (all are HOKKO CHEMICAL Manufactured by INDUSTRY CO., LTD.).

固化催化劑的含量可以適當設定，相對於100重量份樹脂成分，較佳為0.1~3重量份。 The content of the curing catalyst can be appropriately set, and is preferably 0.1 to 3 parts by weight based on 100 parts by weight of the resin component.

本發明的接著薄片除前述成分以外還可以適當含有接著薄片製造中通常使用的配混劑，例如交聯劑等。 The subsequent sheet of the present invention may contain, in addition to the above-mentioned components, a compounding agent which is usually used in the production of a sheet, for example, a crosslinking agent or the like.

對接著薄片的製造方法沒有特別限定，較佳包括以下步驟的方法：製作接著劑組合物溶液的步驟，該接著劑組合物溶液含有球狀氧化鋁填料、樹脂成分、及根據需要的其它配混劑，所述樹脂成分包含高分子量成分(A)和低分子量成分(B)；過濾接著劑組合物溶液，得到濾液的步驟；以及將濾液塗布到基材隔離膜上而形成塗布膜後，將塗布膜乾燥的步驟。 The method for producing the subsequent sheet is not particularly limited, and preferably includes a method of preparing a solution of an adhesive composition containing a spherical alumina filler, a resin component, and other compounding as needed. And the resin component comprises a high molecular weight component (A) and a low molecular weight component (B); a step of filtering the adhesive composition solution to obtain a filtrate; and after the filtrate is applied onto the substrate separator to form a coating film, The step of drying the coated film.

作為接著劑組合物溶液中使用的溶劑，沒有特別限定，較佳能夠使前述各成分均勻溶解、混煉或分散的有機溶劑。例如，可列舉出二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮、丙酮、甲乙酮、環己酮等酮系溶劑、甲苯、二甲苯等。 The solvent to be used in the adhesive composition solution is not particularly limited, and an organic solvent capable of uniformly dissolving, kneading or dispersing the above components is preferred. For example, a ketone solvent such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone or cyclohexanone, toluene or xylene may be mentioned.

過濾中使用的過濾材料的孔隙較佳為20μm以下。由此，能夠使球狀氧化鋁填料的最大粒徑為20μm以下，能夠使接著薄片的厚度為30μm以下。 The pores of the filter material used in the filtration are preferably 20 μm or less. Thereby, the maximum particle diameter of the spherical alumina filler can be 20 μm or less, and the thickness of the succeeding sheet can be 30 μm or less.

作為基材隔離膜，可以使用聚對苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯；利用氟系剝離劑、丙烯酸長鏈烷基酯系剝離劑等剝離劑進行了表面塗布的塑膠薄膜或紙等。作為接著劑組合物溶液的塗布方法，例如可列舉出 輥塗、絲網塗覆、凹版塗覆等。另外，對塗布膜的乾燥條件沒有特別限定，例如，可以在乾燥溫度70~160℃、乾燥時間1~5分鐘的條件下進行。 As the substrate separator, polyethylene terephthalate (PET), polyethylene, or polypropylene can be used, and surface coating can be carried out using a release agent such as a fluorine-based release agent or an acrylic long-chain alkyl ester release agent. Plastic film or paper. As a coating method of the adhesive composition solution, for example, Roll coating, screen coating, gravure coating, and the like. Further, the drying conditions of the coating film are not particularly limited, and for example, it can be carried out under the conditions of a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes.

對接著薄片的厚度沒有特別限定，較佳為5μm以上、更佳為15μm以上。不足5μm時，產生未與發生了翹曲的半導體晶圓或半導體晶片接著的位置，有時接著面積會不穩定。另外，接著薄片的厚度較佳為100μm以下。超過100μm時，由於晶片貼裝的載荷而使接著薄片過度突出，有時污染焊盤。 The thickness of the subsequent sheet is not particularly limited, but is preferably 5 μm or more, and more preferably 15 μm or more. When the thickness is less than 5 μm, a position that does not follow the warped semiconductor wafer or the semiconductor wafer may occur, and the area may be unstable. Further, the thickness of the sheet is preferably 100 μm or less. When it exceeds 100 μm, the subsequent sheet is excessively protruded due to the load of the wafer mounting, and the pad may be contaminated.

從半導體裝置的高積體化、和散熱性提高的觀點出發，較佳接著薄片的厚度薄。具體而言，接著薄片的厚度更佳為30μm以下、又更佳為20μm以下。 From the viewpoint of high integration of the semiconductor device and improvement in heat dissipation, it is preferable that the thickness of the sheet is thin. Specifically, the thickness of the sheet is more preferably 30 μm or less, and still more preferably 20 μm or less.

本發明的接著薄片中，固化前的130℃的熔融黏度較佳為5Pa．s以上。為5Pa．s以上時，能夠抑制熱固化時的發泡。另外，固化前的130℃的熔融黏度較佳為5000Pa．s以下。為5000Pa．s以下時，可得到良好的凹凸追隨性。 In the succeeding sheet of the present invention, the melt viscosity at 130 ° C before curing is preferably 5 Pa. s above. For 5Pa. When s or more, foaming at the time of heat curing can be suppressed. In addition, the melt viscosity at 130 ° C before curing is preferably 5000 Pa. s below. It is 5000Pa. When s or less, good bump followability can be obtained.

熔融黏度可以通過以下方法測定。 The melt viscosity can be measured by the following method.

即，使用流變儀(HAAKE公司製造，商品名：RS-1)，利用平行板法測定熔融黏度。具體而言，在加熱至130℃的板上放置0.1g的接著薄片，開始測定。將自測定開始起240秒後的值的平均值作為熔融黏度。其中，板間的間隙設為0.1mm。 Specifically, the melt viscosity was measured by a parallel plate method using a rheometer (manufactured by HAAKE Co., Ltd., trade name: RS-1). Specifically, 0.1 g of the succeeding sheet was placed on a plate heated to 130 ° C to start measurement. The average value of the value after 240 seconds from the start of the measurement was taken as the melt viscosity. Among them, the gap between the plates was set to 0.1 mm.

固化前的拉伸試驗時的斷裂伸長率較佳為10%以上。為10%以上時，可得到良好的撓性，能夠防止接著薄片使 用時的裂紋、缺口。固化前的拉伸試驗時的斷裂伸長率較佳為200%以下。為200%以下時，能夠將接著薄片適宜地用於隱形切割製程(stealth dicing process)。隱形切割是如下的製程：在切割膠帶(切割薄膜)和接著薄片的層疊物的接著薄片側黏貼晶圓，利用鐳射照射在晶圓內部製作缺陷，將切割膠帶伸展，從而將晶圓和接著薄片切斷。斷裂伸長率大時，無法順利地切斷接著薄片。 The elongation at break during the tensile test before curing is preferably 10% or more. When it is 10% or more, good flexibility can be obtained, and it is possible to prevent the subsequent sheet from being made. Cracks and gaps in use. The elongation at break during the tensile test before curing is preferably 200% or less. When it is 200% or less, the succeeding sheet can be suitably used for a stealth dicing process. Invisible cutting is a process in which a wafer is pasted on a dicing tape (cut film) and a subsequent sheet side of a laminate of the sheet, and a defect is formed inside the wafer by laser irradiation, and the dicing tape is stretched, thereby wafer and subsequent sheet Cut off. When the elongation at break is large, the subsequent sheet cannot be cut smoothly.

斷裂伸長率可以通過以下方法測定。 The elongation at break can be measured by the following method.

即，用切割刀將接著薄片切出寬度10mm、長度30mm、厚度40μm的長條狀，使用拉伸試驗機((股)島津製作所製造，商品名：TENSILON)，以卡盤間距離20mm、拉伸速度0.5m/min進行拉伸試驗。然後，利用下述式求出斷裂伸長率。 In other words, the succeeding sheet was cut into a strip shape having a width of 10 mm, a length of 30 mm, and a thickness of 40 μm by a dicing blade, and a tensile tester (manufactured by Shimadzu Corporation, trade name: TENSILON) was used, and the distance between the chucks was 20 mm. The tensile test was carried out at a stretching speed of 0.5 m/min. Then, the elongation at break was determined by the following formula.

斷裂伸長率(%)=(((斷裂時的卡盤間距離(mm))-20)/20)×100 Elongation at break (%) = (((inter-chuck distance (mm) at break) - 20) / 20) × 100

本發明的接著薄片在固化後的玻璃化轉變溫度較佳為100℃以上。為100℃以上時，由半導體裝置的使用溫度區域內的溫度變化造成的應力、翹曲受到抑制，因此能夠得到可靠性高的半導體裝置。另外，對固化後的玻璃化轉變溫度的上限沒有特別限定，例如為200℃以下。 The glass transition temperature of the succeeding sheet of the present invention after curing is preferably 100 ° C or higher. When the temperature is 100 ° C or higher, stress and warpage caused by temperature change in the use temperature region of the semiconductor device are suppressed, so that a highly reliable semiconductor device can be obtained. Further, the upper limit of the glass transition temperature after curing is not particularly limited, and is, for example, 200 ° C or lower.

固化後的260℃下的拉伸儲能模量較佳為10MPa以上。為10MPa以上時，可得到良好的耐回流焊性。另外，對固化後的260℃下的拉伸儲能模量沒有特別限定，例如為10000MPa以下。 The tensile storage modulus at 260 ° C after curing is preferably 10 MPa or more. When it is 10 MPa or more, good reflow resistance can be obtained. Further, the tensile storage modulus at 260 ° C after curing is not particularly limited, and is, for example, 10,000 MPa or less.

玻璃化轉變溫度和拉伸儲能模量可以通過以下方法測定。 The glass transition temperature and the tensile storage modulus can be determined by the following methods.

即，將接著薄片在175℃下通過1小時的加熱處理進行熱固化，然後用切割刀切出厚度200μm、長度400mm(測定長度)、寬度10mm的長條狀，使用固體粘彈性測定裝置(RSAIII，Rheometric Scientific Inc.製造)，測定-50~300℃下的儲能模量。測定條件設為：頻率1Hz、升溫速度10℃/min。進而，通過算出tanδ(G”(損耗彈性模量)/G’(儲能模量))的值，得到玻璃化轉變溫度。 That is, the subsequent sheet was thermally cured by heat treatment at 175 ° C for 1 hour, and then a strip having a thickness of 200 μm, a length of 400 mm (measured length), and a width of 10 mm was cut out with a dicing blade, and a solid viscoelasticity measuring apparatus (RSAIII) was used. , manufactured by Rheometric Scientific Inc., measuring the storage modulus at -50 to 300 °C. The measurement conditions were as follows: a frequency of 1 Hz and a temperature increase rate of 10 ° C/min. Further, by calculating the value of tan δ (G" (loss elastic modulus) / G' (storage modulus), the glass transition temperature is obtained.

本發明的接著薄片可以用於半導體裝置的製造。尤其可以適宜地作為接著被著體與半導體晶片的晶粒接合薄膜來使用。作為被著體，可列舉出引線框、中介層(interposer)、半導體晶片等。 The succeeding sheet of the present invention can be used in the manufacture of a semiconductor device. In particular, it can be suitably used as a die-bonding film of a semiconductor substrate and a semiconductor wafer. Examples of the object include a lead frame, an interposer, and a semiconductor wafer.

本發明的接著薄片較佳與切割薄膜一體地使用。換言之，較佳以帶接著薄片的切割薄膜(切割‧晶粒接合薄膜)的形態來使用。 The back sheet of the present invention is preferably used integrally with the cut film. In other words, it is preferably used in the form of a dicing film (cut ‧ grain bonded film) with a sheet.

〔切割/芯片接合薄膜〕 [Cutting/Chip Bonding Film]

以下，對本發明的切割‧晶粒接合薄膜進行說明。圖1為本發明的一個實施方式的切割‧晶粒接合薄膜的截面示意圖。圖2為本發明的另一個實施方式的切割‧晶粒接合薄膜的截面示意圖。 Hereinafter, the dicing die-bonding film of the present invention will be described. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a dicing die-bonding film according to an embodiment of the present invention. 2 is a schematic cross-sectional view showing a dicing die-bonding film according to another embodiment of the present invention.

如圖1所示，切割‧晶粒接合薄膜10具有在切割薄膜11上層疊有接著薄片3的結構。切割薄膜11是在基材 1上層疊黏著劑層2而構成的，接著薄片3設置在該黏著劑層2上。另外，本發明也可以為如下的結構：像圖2中示出的切割‧晶粒接合薄膜12那樣，僅在工件(半導體晶圓等)貼附部分形成有接著薄片3’。 As shown in FIG. 1, the dicing die-bonding film 10 has a structure in which a subsequent sheet 3 is laminated on the dicing film 11. The dicing film 11 is on the substrate 1 is formed by laminating an adhesive layer 2, and then the sheet 3 is placed on the adhesive layer 2. Further, the present invention may be configured such that, like the dicing die-bonding film 12 shown in Fig. 2, the succeeding sheet 3' is formed only on the attached portion of the workpiece (semiconductor wafer or the like).

基材1作為切割‧晶粒接合薄膜10、12的強度基體，較佳具有紫外線透過性。作為基材1，例如可列舉出低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、多離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳綸(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、有機矽樹脂、金屬(箔)、紙等。 The base material 1 preferably has ultraviolet ray permeability as the strength base of the dicing die-bonding films 10 and 12. Examples of the substrate 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymerization. Polyolefins such as polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, multiionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (none Copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polyester, polycarbonate, poly Yttrium, polyetheretherketone, polyimine, polyetherimide, polyamine, wholly aromatic polyamine, polyphenylene sulfide, aramid (paper), glass, glass cloth, fluororesin, Polyvinyl chloride, polyvinylidene chloride, cellulose resin, organic resin, metal (foil), paper, and the like.

基材1的表面可以為了提高與鄰接的層的密合性、保持性等而實施常用的表面處理，例如鉻酸處理、臭氧曝露、火焰曝露、高壓電擊曝露、離子化輻射線處理等化學或物理的處理、利用底塗劑(例如後述黏著物質)的塗布處理。 The surface of the substrate 1 may be subjected to a common surface treatment for improving adhesion to adjacent layers, retention, and the like, such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, or the like. Physical treatment, coating treatment using a primer (for example, an adhesive described later).

對基材1的厚度沒有特別限制，可適當確定，通常為5~200μm左右。 The thickness of the substrate 1 is not particularly limited and can be appropriately determined, and is usually about 5 to 200 μm.

作為用於形成黏著劑層2的黏著劑沒有特別限制，例如可以使用丙烯酸類黏著劑、橡膠系黏著劑等常用的壓敏性接著劑。作為壓敏性接著劑，從忌諱半導體晶圓或玻璃等的污染的電子部件的利用超純水、醇等有機溶劑的清潔清洗性等的觀點出發，較佳以丙烯酸類聚合物為基礎聚合物的丙烯酸類黏著劑。 The adhesive for forming the adhesive layer 2 is not particularly limited, and for example, a usual pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive can be used. As a pressure-sensitive adhesive, it is preferable to use an acrylic polymer as a base polymer from the viewpoint of avoiding cleaning and cleaning properties of an organic solvent such as ultrapure water or alcohol using a contaminated electronic component such as a semiconductor wafer or glass. Acrylic adhesive.

作為丙烯酸類聚合物，例如可列舉出使用(甲基)丙烯酸烷基酯(例如，甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、仲丁酯、叔丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基的碳數1~30、特別是碳數4~18的直鏈狀或支鏈狀的烷基酯等)和(甲基)丙烯酸環烷基酯(例如，環戊酯、環己酯等)中的1種或2種以上作為單體成分的丙烯酸類聚合物等。需要說明的是，(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯，本發明的(甲基)全部都是指同樣的含義。 Examples of the acrylic polymer include alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, sec-butyl ester, tert-butyl ester, and the like). Amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, decyl, decyl, isodecyl, undecyl, dodecyl, ten An alkyl group such as a trialkyl ester, a tetradecyl ester, a hexadecyl ester, an octadecyl ester or an eicosyl ester has a carbon number of 1 to 30, particularly a linear number of 4 to 18 carbon atoms or One or two or more kinds of acrylic polymers such as a branched alkyl ester or the like and a cycloalkyl (meth)acrylate (for example, cyclopentyl ester or cyclohexyl ester) are used as a monomer component. In addition, (meth)acrylate means an acrylate and/or a methacrylate, and all (meth) of this invention means the same meaning.

丙烯酸類聚合物出於內聚力、耐熱性等的改善的目的，也可以根據需要包含與能跟前述(甲基)丙烯酸烷基酯或環烷基酯共聚的其它單體成分相對應的單元。作為這種單體成分，例如可列舉出：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等含羧基單體；馬來酸酐、衣康酸酐等酸酐單體；(甲基)丙烯酸2-羥乙酯、(甲基)丙烯 酸2-羥丙酯、(甲基)丙烯酸4-羥丁酯、(甲基)丙烯酸6-羥己酯、(甲基)丙烯酸8-羥辛酯、(甲基)丙烯酸10-羥癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等含羥基單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺基丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基單體；2-羥乙基丙烯醯基磷酸酯等含磷酸基單體；丙烯醯胺、丙烯腈等。這些能共聚的單體成分可以使用1種或2種以上。這些能共聚的單體的用量較佳為全部單體成分的40重量%以下。 The acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester as needed for the purpose of improving cohesive force, heat resistance and the like. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. And other carboxyl group-containing monomers; anhydride monomers such as maleic anhydride and itaconic anhydride; 2-hydroxyethyl (meth)acrylate, (meth) propylene 2-hydroxypropyl acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate a hydroxyl group-containing monomer such as 12-hydroxylauryl (meth)acrylate or (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl a sulfonic acid group such as acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide, propanesulfonic acid, sulfopropyl (meth)acrylate, or (meth)acryloxynaphthalenesulfonic acid a monomer; a phosphate group-containing monomer such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile or the like. These monomer components which can be copolymerized may be used alone or in combination of two or more. The amount of these copolymerizable monomers is preferably 40% by weight or less based on the total of the monomer components.

進而，丙烯酸類聚合物也可以為了進行交聯而根據需要包含多官能性單體等作為共聚用單體成分。作為這種多官能性單體，例如可列舉出己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、胺基甲酸酯(甲基)丙烯酸酯等。這些多官能性單體也可以使用1種或2種以上。多官能性單體的用量從黏著特性等的觀點出發較佳為全部單體成分的30重量%以下。 Further, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary, for crosslinking. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol di(meth)acrylate. Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(methyl) Acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer to be used is preferably 30% by weight or less based on the total of the monomer components from the viewpoint of adhesion characteristics and the like.

丙烯酸類聚合物通過將單一單體或2種以上的單體混 合物用於聚合而得到。聚合可以通過溶液聚合、乳液聚合、本體聚合、懸浮聚合等中的任意方式進行。從防止對乾淨的被著體污染等的觀點出發，較佳低分子量物質的含量小。從該觀點出發，丙烯酸類聚合物的數均分子量較佳為30萬以上、又更佳為40萬~300萬左右。 Acrylic polymer by mixing a single monomer or two or more monomers The compound is obtained by polymerization. The polymerization can be carried out by any of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. From the viewpoint of preventing contamination of the cleaned body or the like, the content of the low molecular weight substance is preferably small. From this viewpoint, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.

另外，前述黏著劑中，為了提高作為基礎聚合物的丙烯酸類聚合物等的數均分子量，也可以適當採用外部交聯劑。作為外部交聯方法的具體手段，可列舉出添加多異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂交聯劑使其反應的方法。使用外部交聯劑時，其用量通過與要進行交聯的基礎聚合物的平衡、進而作為黏著劑的使用用途而適當確定。通常，相對於100重量份前述基礎聚合物，較佳配混5重量份左右以下、又更佳配混0.1~5重量份。進而，黏著劑中，根據需要，除了前述成分之外，也可以使用現有公知的各種增黏劑、抗老化劑等添加劑。 Further, in the above-mentioned adhesive, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably used. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent is added and reacted. When an external crosslinking agent is used, the amount thereof is appropriately determined by the balance with the base polymer to be crosslinked, and further as the use of the adhesive. In general, it is preferably blended in an amount of about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, per 100 parts by weight of the base polymer. Further, in the adhesive, if necessary, additives such as various conventionally known tackifiers and anti-aging agents may be used in addition to the above components.

黏著劑層2可以利用輻射線固化型黏著劑而形成。輻射線固化型黏著劑能夠利用紫外線等輻射線的照射而使交聯度增大，容易地降低其黏著力。 The adhesive layer 2 can be formed using a radiation curable adhesive. The radiation-curable adhesive can increase the degree of crosslinking by irradiation with radiation such as ultraviolet rays, and easily reduce the adhesion.

通過僅對與圖1中示出的黏著劑層2的工件貼附部分相對應的部分2a進行輻射線照射，能夠設置與其它部分2b的黏著力的差異。此時，利用未固化的輻射線固化型黏著劑而形成的前述部分2b與接著薄片3黏著，能夠確保切割時的保持力。 The difference in adhesion to the other portions 2b can be set by irradiating only the portion 2a corresponding to the workpiece attaching portion of the adhesive layer 2 shown in Fig. 1 to the radiation. At this time, the portion 2b formed by the uncured radiation-curable adhesive adheres to the succeeding sheet 3, and the holding force at the time of cutting can be ensured.

另外，通過與圖2中示出的接著薄片3’相對應地將輻射線固化型的黏著劑層2固化，能夠形成黏著力明顯降低的前述部分2a。此時，可以在由未固化的輻射線固化型黏著劑形成的前述部分2b上固定晶圓環。 Further, by curing the radiation-curable adhesive layer 2 in correspondence with the succeeding sheet 3' shown in Fig. 2, the aforementioned portion 2a in which the adhesive force is remarkably lowered can be formed. At this time, the wafer ring can be fixed on the aforementioned portion 2b formed of an uncured radiation-curable adhesive.

即，利用輻射線固化型黏著劑形成黏著劑層2時，較佳對前述部分2a進行輻射線照射，使得黏著劑層2的前述部分2a的黏著力<其它部分2b的黏著力。 That is, when the adhesive layer 2 is formed by the radiation-curable adhesive, it is preferable to irradiate the portion 2a with radiation so that the adhesive force of the portion 2a of the adhesive layer 2 <the adhesion of the other portion 2b.

輻射線固化型黏著劑可以沒有特別限制地使用具有碳碳雙鍵等輻射線固化性的官能團且表現出黏著性的物質。作為輻射線固化型黏著劑，例如，可例示出在前述丙烯酸類黏著劑、橡膠系黏著劑等常用的壓敏性黏著劑中配混輻射線固化性的單體成分、低聚物成分而成的添加型的輻射線固化型黏著劑。 The radiation-curable adhesive can be a material having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness without particular limitation. As a radiation-curable adhesive, for example, a radiation-curable monomer component or oligomer component is blended in a conventional pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive. An additive type of radiation curing adhesive.

作為配混的輻射線固化性的單體成分，例如可列舉出胺基甲酸酯低聚物、胺基甲酸酯(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外，輻射線固化性的低聚物成分可列舉出聚氨酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，其分子量為100~30000左右的範圍是適當的。輻射線固化性的單體成分、低聚物成分的配混量可以根據前述黏著劑層的種類適當確定能夠降低黏著劑層的 黏著力的量。通常，相對於構成黏著劑的丙烯酸類聚合物等基礎聚合物100重量份，例如為5~500重量份、較佳為40~150重量份左右。 Examples of the radiation-curable monomer component to be blended include a urethane oligomer, a urethane (meth) acrylate, and a trimethylolpropane tri(meth) acrylate. , tetramethylol methane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (methyl) ) acrylate, 1,4-butanediol di(meth)acrylate, and the like. In addition, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and the molecular weight thereof is in the range of about 100 to 30,000. It is appropriate. The compounding amount of the radiation curable monomer component and the oligomer component can be appropriately determined according to the type of the above-mentioned adhesive layer to reduce the adhesive layer. The amount of adhesion. In general, it is, for example, 5 to 500 parts by weight, preferably 40 to 150 parts by weight, per 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

另外，作為輻射線固化型黏著劑，除了前述說明過的添加型的輻射線固化型黏著劑之外，可列舉出：使用在聚合物側鏈或主鏈中或者主鏈末端具有碳碳雙鍵的物質作為基礎聚合物的內在型的輻射線固化型黏著劑。內在型的輻射線固化型黏著劑不需要含有作為低分子成分的低聚物成分等或含有得不多，因此低聚物成分等不會經時地在黏著劑中移動，能夠形成穩定的層結構的黏著劑層，故而較佳。 Further, as the radiation-curable adhesive, in addition to the above-described additive-type radiation-curable adhesive, it may be mentioned that it has a carbon-carbon double bond in the side chain or main chain of the polymer or at the end of the main chain. The substance acts as an intrinsic type of radiation-curing adhesive for the base polymer. The intrinsic type radiation-curable adhesive does not need to contain an oligomer component or the like as a low molecular component, and therefore does not contain much, so that an oligomer component or the like does not move over time in the adhesive, and a stable layer can be formed. The structure of the adhesive layer is preferred.

前述具有碳碳雙鍵的基礎聚合物可以沒有特別限制地使用具有碳碳雙鍵且具有黏著性的物質。作為這種基礎聚合物，較佳以丙烯酸類聚合物為基本骨架的聚合物。作為丙烯酸類聚合物的基本骨架，可列舉出前述例示的丙烯酸類聚合物。 The aforementioned base polymer having a carbon-carbon double bond can be used without any particular limitation, and has a carbon-carbon double bond and has an adhesive property. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferred. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

對向前述丙烯酸類聚合物中導入碳碳雙鍵的方法沒有特別限制，可以採用各種方法，碳碳雙鍵從聚合物側鏈導入時，分子設計容易。例如，可列舉出如下的方法：預先使丙烯酸類聚合物與具有官能團的單體共聚，然後將具有能與該官能團反應的官能團和碳碳雙鍵的化合物在維持碳碳雙鍵的輻射線固化性的狀態下進行縮合或加成反應的方法。 The method of introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. When a carbon-carbon double bond is introduced from a polymer side chain, molecular design is easy. For example, a method of copolymerizing an acrylic polymer with a monomer having a functional group, and then a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond in the radiation curing of the carbon-carbon double bond can be exemplified. A method of performing a condensation or addition reaction in a sexual state.

作為這些官能團的組合的例子，可列舉出羧酸基團和 環氧基、羧酸基團和氮丙啶基、羥基和異氰酸酯基等。這些官能團的組合當中，從反應追蹤的容易性出發，羥基和異氰酸酯基的組合是適宜的。另外，只要是能利用這些官能團的組合生成具有前述碳碳雙鍵的丙烯酸類聚合物那樣的組合，則官能團可以位於丙烯酸類聚合物和前述化合物中的任意側，在前述較佳的組合中，丙烯酸類聚合物具有羥基、前述化合物具有異氰酸酯基的情況是適宜的。此時，作為具有碳碳雙鍵的異氰酸酯化合物，例如可列舉出甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。另外，作為丙烯酸類聚合物，可以使用將前述例示的含羥基單體、2-羥乙基乙烯基醚、4-羥丁基乙烯基醚、二乙二醇單乙烯基醚這樣的醚系化合物等共聚而成的物質。 As examples of the combination of these functional groups, a carboxylic acid group and An epoxy group, a carboxylic acid group, an aziridine group, a hydroxyl group, an isocyanate group, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is suitable from the viewpoint of ease of reaction tracking. Further, as long as it is a combination which can form an acrylic polymer having the above-described carbon-carbon double bond by a combination of these functional groups, the functional group may be located on either side of the acrylic polymer and the above-mentioned compound, and in the above preferred combination, The case where the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group is suitable. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate, 2-methacryloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl. Isocyanate, etc. Further, as the acrylic polymer, an ether compound such as the above-exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether can be used. A substance obtained by copolymerization.

前述內在型的輻射線固化型黏著劑可以單獨使用前述具有碳碳雙鍵的基礎聚合物(特別是丙烯酸類聚合物)，也可以以不使特性惡化的水準配混前述輻射線固化性的單體成分、低聚物成分。輻射線固化性的低聚物成分等相對於100重量份基礎聚合物，通常為30重量份的範圍內、較佳為0~10重量份的範圍。 The above-mentioned intrinsic radiation-curable adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or may be blended with the radiation-curable single sheet at a level that does not deteriorate the properties. Body composition, oligomer component. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer.

前述輻射線固化型黏著劑中，在利用紫外線等進行固化的情況下含有光聚合引發劑。作為光聚合引發劑，例如可列舉出4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α’-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯甲酮等α-酮醇系化合物；甲氧基苯乙酮、2,2- 二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-〔4-(甲硫基)-苯基〕-2-嗎啉代丙烷-1-酮等苯乙酮系化合物；苯偶姻***、苯偶姻異丙醚、茴香偶姻甲醚等苯偶姻醚系化合物；苯偶醯二甲基縮酮等縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯基-1,1-丙二酮-2-(O-乙氧基羰基)肟等光活性肟系化合物；二苯甲酮、苯甲醯基苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等噻噸酮系化合物；樟腦醌；鹵代酮；醯基氧化膦；醯基膦酸酯等。光聚合引發劑的配混量相對於構成黏著劑的丙烯酸類聚合物等基礎聚合物100重量份，例如為0.05~20重量份左右。 In the radiation-curable pressure-sensitive adhesive, a photopolymerization initiator is contained in the case of curing by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl) ketone and α-hydroxy-α,α'-dimethylacetophenone. Α-keto alcohol compound such as 2-methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl benzophenone; methoxyacetophenone, 2,2- Dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholino An acetophenone-based compound such as propan-1-one; a benzoin ether compound such as benzoin ethyl ether, benzoin isopropyl ether or fenthyl methoxy ether; a ketal compound such as benzoin dimethyl ketal An aromatic sulfonium chloride compound such as 2-naphthalenesulfonium chloride; a photoactive lanthanide compound such as 1-phenyl-1,1-propanedione-2-(O-ethoxycarbonyl)anthracene; Benzophenone-based compounds such as ketone, benzamidine benzoic acid, 3,3'-dimethyl-4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methyl Thioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropyl A thioxanthone compound such as thioxanthone; camphorquinone; a halogenated ketone; a fluorenylphosphine oxide; a decylphosphonate. The compounding amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

另外，作為輻射線固化型黏著劑，例如可列舉出日本特開昭60-196956號公報中公開的橡膠系黏著劑或丙烯酸類黏著劑等，所述橡膠系黏著劑或丙烯酸類黏著劑含有：具有2個以上不飽和鍵的加聚性化合物、具有環氧基的烷氧基矽烷等光聚合性化合物、以及羰基化合物、有機硫化合物、過氧化物、胺、鎓鹽系化合物等光聚合引發劑。 In addition, examples of the radiation-curable adhesive include a rubber-based adhesive or an acrylic adhesive disclosed in JP-A-60-196956, and the rubber-based adhesive or acrylic adhesive contains: Photopolymerizable compound such as a polyaddition compound having two or more unsaturated bonds, an alkoxysilane having an epoxy group, or a photopolymerization reaction such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine or a phosphonium salt compound Agent.

前述輻射線固化型的黏著劑層2中，也可以根據需要含有利用輻射線照射而著色的化合物。通過在黏著劑層2中含有利用輻射線照射而著色的化合物，能夠僅使經輻射線照射的部分著色。利用輻射線照射而著色的化合物是在輻射線照射前為無色或淺色，利用輻射線照射而變為有色 的化合物，例如，可列舉出隱色染料等。利用輻射線照射而著色的化合物的使用比例可以適當設定。 In the radiation-curable adhesive layer 2, a compound colored by irradiation with radiation may be contained as needed. By including the compound colored by irradiation with radiation in the adhesive layer 2, only the portion irradiated with the radiation can be colored. A compound colored by radiation irradiation is a colorless or light color before irradiation with radiation, and becomes colored by irradiation with radiation. Examples of the compound include, for example, leuco dyes. The proportion of the compound colored by irradiation with radiation can be appropriately set.

對黏著劑層2的厚度沒有特別限定，從防止晶片切截面的缺口、兼顧接著層的固定保持等觀點出發，較佳為1~50μm左右。較佳為2~30μm、又更佳為5~25μm。 The thickness of the adhesive layer 2 is not particularly limited, and is preferably from about 1 to 50 μm from the viewpoint of preventing the chip from being cut in the cross section of the wafer and maintaining the adhesion of the adhesive layer. It is preferably 2 to 30 μm, and more preferably 5 to 25 μm.

切割‧晶粒接合薄膜10、12的接著薄片3、3’較佳用隔離膜保護(未圖示)。隔離膜具有作為保護接著薄片3、3’直至供於實用的保護材料的功能。隔離膜在要將工件貼合於切割‧晶粒接合薄膜的接著薄片3、3’上時被剝離。作為隔離膜，也可以使用聚對苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯；用氟系剝離劑、丙烯酸長鏈烷基酯系剝離劑等剝離劑進行了表面塗布的塑膠薄膜或紙等。 The succeeding sheets 3, 3' of the dicing die-bonding films 10, 12 are preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the succeeding sheets 3, 3' until practical. The separator is peeled off when the workpiece is to be attached to the succeeding sheets 3, 3' of the diced die-bonding film. As the separator, polyethylene terephthalate (PET), polyethylene, or polypropylene, and a surface-coated plastic such as a fluorine-based release agent or a long-chain alkyl ester-based release agent such as a release agent may be used. Film or paper, etc.

切割‧晶粒接合薄膜10、12可以通過通常的方法製造。例如，通過將切割薄膜11的黏著劑層2與接著薄片3、3’黏貼，從而能夠製造切割‧晶粒接合薄膜10、12。 The dicing/grain bonding films 10, 12 can be produced by a usual method. For example, by cutting the adhesive layer 2 of the dicing film 11 and the subsequent sheets 3, 3', the dicing die-bonding films 10, 12 can be manufactured.

〔半導體裝置的製造方法〕 [Method of Manufacturing Semiconductor Device]

一邊參照圖3一邊對使用切割‧晶粒接合薄膜10的半導體裝置的製造方法進行說明。圖3為示出半導體裝置的一種製造步驟的圖。 A method of manufacturing a semiconductor device using the dicing die-bonding film 10 will be described with reference to FIG. FIG. 3 is a view showing a manufacturing step of a semiconductor device.

首先，在切割‧晶粒接合薄膜10的接著薄片3的半導體晶圓貼附部分3a上壓接半導體晶圓4，將其接著保持並固定(貼附步驟)。本步驟利用壓接輥等按壓手段邊 按壓邊進行。 First, the semiconductor wafer 4 is pressure-bonded to the semiconductor wafer attaching portion 3a of the succeeding sheet 3 of the ‧ die-bonding film 10, and then held and fixed (attachment step). This step uses a pressing roller or the like to press the side Press on the side.

接著，進行半導體晶圓4的切割。由此，將半導體晶圓4切斷成規定的尺寸使其單片化，製造半導體晶片5。切割例如自半導體晶圓4的電路面側根據常法進行。另外，本步驟中，例如可以採用將切割進行至切割‧晶粒接合薄膜10為止的、被稱為全切割(full cut)的切斷方式等。作為本步驟中使用的切割裝置，沒有特別限定，可以使用現有公知的裝置。 Next, the dicing of the semiconductor wafer 4 is performed. Thereby, the semiconductor wafer 4 is cut into a predetermined size and singulated to manufacture the semiconductor wafer 5. The cutting is performed, for example, from the circuit surface side of the semiconductor wafer 4 in accordance with a conventional method. Further, in this step, for example, a cutting method called full cut, which cuts the cutting to the die-bonding film 10, may be employed. The cutting device used in this step is not particularly limited, and a conventionally known device can be used.

為了將接著固定於切割‧晶粒接合薄膜10的半導體晶片5剝離，而進行半導體晶片5的拾取。作為拾取的方法，沒有特別限定，可以採用現有公知的各種方法。例如，可列舉出：將各個半導體晶片5自切割‧晶粒接合薄膜10側用針形件(needle)頂起，利用拾取裝置拾取被頂起的半導體晶片5的方法等。 In order to peel off the semiconductor wafer 5 which is subsequently fixed to the dicing die-bonding film 10, the semiconductor wafer 5 is picked up. The method of picking up is not particularly limited, and various conventionally known methods can be employed. For example, a method in which each of the semiconductor wafers 5 is lifted by a needle from the side of the dicing die-bonding film 10, and the semiconductor wafer 5 that is lifted up is picked up by a pick-up device.

此處，關於拾取，在黏著劑層2為紫外線固化型的情況下，在對該黏著劑層2照射紫外線後進行。由此，黏著劑層2對接著薄片3的黏著力降低，半導體晶片5的剝離變得容易。其結果，能夠無損傷地拾取半導體晶片5。對紫外線照射時的照射強度、照射時間等條件沒有特別限定，根據需要適當設定即可。 Here, in the case where the adhesive layer 2 is of an ultraviolet curing type, the pickup layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force of the adhesive layer 2 to the subsequent sheet 3 is lowered, and the peeling of the semiconductor wafer 5 becomes easy. As a result, the semiconductor wafer 5 can be picked up without damage. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary.

拾取的半導體晶片5介由接著薄片3接著固定於被著體6(晶粒接合)。晶粒接合溫度較佳為80~150℃。 The picked semiconductor wafer 5 is then fixed to the object 6 (die bonding) via the subsequent sheet 3. The die bonding temperature is preferably from 80 to 150 °C.

接著，通過對接著薄片3進行加熱處理，從而將半導體晶片5與被著體6接著。加熱處理的溫度較佳為80℃ 以上、更佳為170℃以上。加熱處理的溫度較佳為200℃以下、更佳為180℃以下。加熱處理的溫度為上述範圍時，能夠良好地接著。另外，加熱處理的時間可以適當設定。 Next, the semiconductor wafer 5 and the object body 6 are followed by heat treatment of the succeeding sheet 3. The temperature of the heat treatment is preferably 80 ° C The above, more preferably 170 ° C or more. The temperature of the heat treatment is preferably 200 ° C or lower, more preferably 180 ° C or lower. When the temperature of the heat treatment is in the above range, it can be satisfactorily continued. In addition, the time of the heat treatment can be appropriately set.

接著，進行將被著體6的端子部(內部引線)的前端與半導體晶片5上的電極焊盤(未圖示)利用接合線7電連接的引線接合步驟。作為接合線7，例如可以使用金線、鋁線或銅線等。進行引線接合時的溫度較佳為80℃以上、更佳為120℃以上，該溫度較佳為250℃以下、更佳為175℃以下。另外，其加熱時間進行幾秒~幾分鐘(例如，1秒~1分鐘)。線連接通過在加熱至前述溫度範圍內的狀態下、組合使用由超聲波得到的振動能量和由施加壓力得到的壓接能量而進行。 Next, a wire bonding step of electrically connecting the tip end of the terminal portion (internal lead) of the body 6 to the electrode pad (not shown) on the semiconductor wafer 5 by the bonding wire 7 is performed. As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding is preferably 80 ° C or higher, more preferably 120 ° C or higher, and the temperature is preferably 250 ° C or lower, more preferably 175 ° C or lower. In addition, the heating time is performed for a few seconds to several minutes (for example, 1 second to 1 minute). The wire connection is performed by using the vibration energy obtained by the ultrasonic wave and the pressure contact energy obtained by the applied pressure in a state of being heated to the aforementioned temperature range.

接著，進行利用密封樹脂8將半導體晶片5密封的密封步驟。本步驟是為了保護搭載於被著體6的半導體晶片5、接合線7而進行的。本步驟通過將密封用的樹脂在模具內成型而進行。作為密封樹脂8，例如使用環氧系的樹脂。樹脂密封時的加熱溫度較佳為165℃以上、更佳為170℃以上，該加熱溫度較佳為185℃以下、更佳為180℃以下。 Next, a sealing step of sealing the semiconductor wafer 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor wafer 5 and the bonding wires 7 mounted on the object 6 . This step is carried out by molding a resin for sealing in a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ° C or higher, more preferably 170 ° C or higher, and the heating temperature is preferably 185 ° C or lower, more preferably 180 ° C or lower.

根據需要，也可以進一步對密封物進行加熱(後固化步驟)。由此，能將密封步驟中固化不足的密封樹脂8完全固化。加熱溫度可以適當設定。 The seal may be further heated as needed (post-cure step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing step can be completely cured. The heating temperature can be set as appropriate.

如上所述，通過如下的方法，能夠製造半導體裝置。 即，所述方法具有：步驟(I)，將切割‧晶粒接合薄膜的接著薄片和半導體晶圓黏貼；步驟(II)，切割半導體晶圓，形成半導體晶片；步驟(III)，將由步驟(II)形成的半導體晶片與接著薄片一起拾取；以及步驟(IV)，將由步驟(III)拾取的半導體晶片介由接著薄片晶粒接合到被著體上。 As described above, the semiconductor device can be manufactured by the following method. That is, the method has the following steps: step (I), bonding the dicing die of the ‧ grain bonded film and the semiconductor wafer; step (II), cutting the semiconductor wafer to form a semiconductor wafer; and step (III), step by step ( II) The formed semiconductor wafer is picked up with the subsequent sheet; and in step (IV), the semiconductor wafer picked up by the step (III) is bonded to the object by the subsequent lamella die.

〔實施例〕 [Examples]

以下，使用實施例對本發明進行詳細說明，但本發明在不超出其要旨的前提下，不限定於以下實施例。 Hereinafter, the present invention will be described in detail by way of examples, but the present invention is not limited to the following examples without departing from the spirit thereof.

對實施例中使用的成分進行說明。 The components used in the examples will be described.

丙烯酸類橡膠：Nagase ChemteX Corporation製造的Teisanresin SG-790(丙烯酸酯共聚物、Mw：50萬、玻璃化轉變溫度：-32℃) Acrylic rubber: Teisanresin SG-790 manufactured by Nagase ChemteX Corporation (acrylate copolymer, Mw: 500,000, glass transition temperature: -32 ° C)

固態環氧樹脂：日本化藥(股)製造的KI-3000-4(鄰甲酚酚醛清漆環氧樹脂、Mw：1250) Solid epoxy resin: KI-3000-4 manufactured by Nippon Kayaku Co., Ltd. (o-cresol novolac epoxy resin, Mw: 1250)

酚醛樹脂：明和化成(股)製造的MEH-7851H(酚醛樹脂、Mw：1580) Phenolic resin: MEH-7851H (phenolic resin, Mw: 1580) manufactured by Minghe Chemical Co., Ltd.

液態環氧樹脂：三菱化學(股)製造的JER827(雙酚A型環氧樹脂、Mw：370) Liquid epoxy resin: JER827 (bisphenol A type epoxy resin, Mw: 370) manufactured by Mitsubishi Chemical Corporation

催化劑：HOKKO CHEMICAL INDUSTRY CO.,LTD.製造的TPP-MK(四苯基鏻四對甲苯基硼酸鹽) Catalyst: TPP-MK (tetraphenylphosphonium tetra-p-tolyl borate) manufactured by HOKKO CHEMICAL INDUSTRY CO., LTD.

填料1：(股)Admatechs製造的AO802(球狀氧化鋁填料、平均粒徑：0.7μm、比表面積：7.5m2/g) Filler 1: (stock) AO802 manufactured by Admatechs (spherical alumina filler, average particle diameter: 0.7 μm, specific surface area: 7.5 m 2 /g)

填料2：電氣化學工業(股)製造的ASFP-20(球狀氧化鋁填料、平均粒徑：0.3μm、比表面積：12.5m2/g) Filler 2: ASFP-20 manufactured by the Electrochemical Industry Co., Ltd. (spherical alumina filler, average particle diameter: 0.3 μm, specific surface area: 12.5 m 2 /g)

填料3：(股)Admatechs製造的AO809(球狀氧化鋁填料、平均粒徑：10μm、比表面積：1m2/g) Filler 3: (stock) AO809 manufactured by Admatechs (spherical alumina filler, average particle diameter: 10 μm, specific surface area: 1 m 2 /g)

填料4：電氣化學工業(股)製造的DAW-07(球狀氧化鋁填料、平均粒徑：8.1μm、比表面積：0.4m2/g) Filler 4: DAW-07 manufactured by the Electrochemical Industry Co., Ltd. (spherical alumina filler, average particle diameter: 8.1 μm, specific surface area: 0.4 m 2 /g)

填料5：電氣化學工業(股)製造的DAW-03(球狀氧化鋁填料、平均粒徑：5.1μm、比表面積：0.5m2/g) Filler 5: DAW-03 manufactured by the Electrochemical Industry Co., Ltd. (spherical alumina filler, average particle diameter: 5.1 μm, specific surface area: 0.5 m 2 /g)

矽烷偶合劑：信越化學工業(股)製造的KBM-403(3-環氧丙氧基丙基三甲氧基矽烷)。 Decane coupling agent: KBM-403 (3-glycidoxypropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd.

對填料的表面處理方法進行說明。 The surface treatment method of the filler will be described.

將填料1~5用矽烷偶合劑進行表面處理，得到表面處理填料1~5。表面處理通過幹式法進行，利用下述式所示的量的矽烷偶合劑進行處理。 The fillers 1 to 5 were surface-treated with a decane coupling agent to obtain surface-treated fillers 1 to 5. The surface treatment was carried out by a dry method and treated with a decane coupling agent in an amount shown by the following formula.

矽烷偶合劑處理量=(填料的重量(g)×填料的比表面積(m2/g))/矽烷偶合劑的最小覆蓋面積(m2/g) Handling amount of decane coupling agent = (weight of filler (g) × specific surface area of filler (m 2 /g)) / minimum coverage area of decane coupling agent (m 2 /g)

矽烷偶合劑的最小覆蓋面積(m2/g)=6.02×1023×13×10-20/矽烷偶合劑的分子量 Minimum coverage area of decane coupling agent (m 2 / g) = 6.02 × 10 23 × 13 × 10 -20 / molecular weight of decane coupling agent

〔實施例和比較例〕 [Examples and Comparative Examples] 接著薄片的製作 Then the production of the sheet

按照表1和表2中記載的配混比，將丙烯酸類橡膠、固態環氧樹脂、酚醛樹脂、液態環氧樹脂、催化劑和表面處理填料溶解於甲乙酮(MEK)，使其分散，得到適於塗 覆的黏度的接著劑組合物溶液。然後，使用635目(孔隙20μm)的斜紋SUS網過濾接著劑組合物溶液，將濾液塗布到進行了有機矽脫模處理的厚度為50μm的由聚對苯二甲酸乙二醇酯薄膜形成的脫模處理薄膜(剝離襯墊)上，然後，在130℃下乾燥2分鐘，得到接著薄片(厚度25μm)。 Acrylic rubber, solid epoxy resin, phenol resin, liquid epoxy resin, catalyst and surface treatment filler were dissolved in methyl ethyl ketone (MEK) according to the compounding ratios shown in Tables 1 and 2, and dispersed to obtain suitable Paint A coated adhesive composition of the adhesive composition. Then, the 205 mesh (pore 20 μm) twill SUS mesh was used to filter the adhesive composition solution, and the filtrate was applied to a 50 μm thick polyethylene terephthalate film which was subjected to organic germanium release treatment. The film was treated with a release film (release liner), and then dried at 130 ° C for 2 minutes to obtain a succeeding sheet (thickness 25 μm).

切割‧晶粒接合薄膜的製作 Cutting and grain bonding film production

將接著薄片在25℃下貼附到切割薄膜(日東電工(股)製造的P2130G)的黏著劑層上，製作切割‧晶粒接合薄膜。 The sheet was attached to an adhesive layer of a dicing film (P2130G manufactured by Nitto Denko Co., Ltd.) at 25 ° C to prepare a diced die-bonding film.

使用得到的接著薄片和切割‧晶粒接合薄膜進行以下的評價。將結果示於表1。 The following evaluation was carried out using the obtained succeeding sheet and the cut ‧ grain bonded film. The results are shown in Table 1.

(填料的細微性分佈和平均粒徑的測定) (Measurement of fineness and average particle size of filler)

將接著薄片放入坩堝中，在大氣氣氛下、700℃下加強熱2小時，使其灰化。將得到的灰分分散在純水中，進行10分鐘超聲波處理，使用鐳射衍射散射式細微性分佈測定裝置(貝克曼庫爾特公司製造，“LS 13 320”；濕式法)求出細微性分佈(體積基準)和平均粒徑。需要說明的是，作為接著薄片的組成，除填料以外為有機成分，通過上述強熱處理，實質上全部有機成分被燒掉，因此將得到的灰分視為填料進行測定。 The next sheet was placed in a crucible, and the heat was tempered at 700 ° C for 2 hours in an air atmosphere to be ashed. The obtained ash was dispersed in pure water, subjected to ultrasonic treatment for 10 minutes, and a fine distribution was determined using a laser diffraction scattering type fineness distribution measuring apparatus ("BSLman Coulter," "LS 13 320"; wet method) (volume basis) and average particle size. In addition, as a composition of the subsequent sheet, an organic component other than the filler is used, and substantially all the organic components are burned off by the above-described intense heat treatment, and thus the obtained ash is measured as a filler.

(填料的BET比表面積的測定) (Measurement of BET specific surface area of filler)

BET比表面積通過BET吸附法(多點法)測定。具體而言，使用Quantachrome製造的四聯式比表面積．微孔分佈測定裝置“NOVA-4200e型”，將根據上述“填料的細微性分佈和平均粒徑的測定”一項而得到的灰分在110℃下真空脫氣6小時以上，然後在氮氣中、在77.35K的溫度下進行測定。 The BET specific surface area was measured by a BET adsorption method (multipoint method). Specifically, the quadruple specific surface area made by Quantachrome is used. The micropore distribution measuring device "NOVA-4200e type", the ash obtained according to the above "measurement of the fineness distribution of the filler and the measurement of the average particle diameter" was vacuum-deaerated at 110 ° C for 6 hours or more, and then in nitrogen gas, The measurement was carried out at a temperature of 77.35 K.

(填埋性試驗) (landfill test)

使用磨削裝置((股)DISCO製造的DGP-8760)，磨削裸矽晶圓(8英寸直徑、厚度750μm)的背面，得到厚度100μm的矽晶圓。在切割‧晶粒接合薄膜的接著薄片上黏貼矽晶圓。黏貼條件如下所述。 A back surface of a bare enamel wafer (8-inch diameter, thickness 750 μm) was ground using a grinding device (DGP-8760 manufactured by DISCO) to obtain a ruthenium wafer having a thickness of 100 μm. The wafer is bonded to the succeeding sheet of the diced ‧ grain bonded film. The bonding conditions are as follows.

<黏貼條件> <Adhesive condition>

貼附裝置：日東精機(股)製造、DR-3000II Attachment device: Nitto Seiki Co., Ltd., DR-3000II

貼附速度計：100mm/min Attached speed meter: 100mm/min

貼附壓力：0.3MPa Attachment pressure: 0.3MPa

貼附時的載台溫度：23℃ Station temperature at the time of attachment: 23 ° C

接著，切割矽晶圓，形成半導體晶片。切割以成為10mm×10mm(10mm見方)的晶片尺寸的方式進行切割。切割條件如下所述。 Next, the germanium wafer is cut to form a semiconductor wafer. The cutting was performed in such a manner as to be a wafer size of 10 mm × 10 mm (10 mm square). The cutting conditions are as follows.

<切割條件> <Cutting conditions>

切割環裝置：DISCO(股)製造，Dicer(DFD6760) Cutting ring device: manufactured by DISCO (shares), Dicer (DFD6760)

切割方式：分步切割(step cut) Cutting method: step cut

Z1刀片：DISCO(股)製造，203O-SE 27HCDD Z1 blade: DISCO (stock) manufacturing, 203O-SE 27HCDD

Z2刀片：DISCO(股)製造，203O-SE 27HCBB Z2 blade: DISCO (stock) manufacturing, 203O-SE 27HCBB

Z1刀片高度：切入至晶圓的一半 Z1 blade height: cut into half of the wafer

Z2刀片高度：在切割薄膜中切入20μm Z2 blade height: cut into 20μm in the cut film

Z1切割速度：30mm/sec Z1 cutting speed: 30mm/sec

Z2切割速度：30mm/sec Z2 cutting speed: 30mm/sec

Z1轉速：40000rpm Z1 speed: 40,000 rpm

Z2轉速：45000rpm Z2 speed: 45000rpm

使用新川(股)製造的晶粒接合機SPA-300，在130℃、1kg、1sec的條件下在AUS308的BGA基板上將帶接著薄片(厚度25μm)的半導體晶片(10mm×10mm×厚度100μm)晶粒接合。作為BGA基板，使用在晶粒接合前在150℃下加熱2小時而去除了水分的基板。然後，將晶片貼裝有半導體晶片的BGA基板在130℃下加熱處理1小時，用超聲波顯微鏡(SAT試驗)觀察空隙，求出空隙的面積。將空隙的面積為20%以下的情況設為○，將超過20%的情況設為×。 Using a die bonder SPA-300 manufactured by Shinkawa Co., Ltd., a semiconductor wafer (10 mm × 10 mm × thickness 100 μm) with a sheet (thickness 25 μm) was formed on a BGA substrate of AUS308 at 130 ° C, 1 kg, 1 sec. Grain bonding. As the BGA substrate, a substrate which was heated at 150 ° C for 2 hours before die bonding to remove moisture was used. Then, the BGA substrate on which the semiconductor wafer was mounted on the wafer was heat-treated at 130 ° C for 1 hour, and the void was observed by an ultrasonic microscope (SAT test) to determine the area of the void. The case where the area of the void is 20% or less is ○, and the case where the area is more than 20% is ×.

(可靠性試驗：耐濕回流焊性) (Reliability test: moisture reflow resistance)

將接著薄片(厚度20μm)分別在溫度40℃的條件下貼附於10mm見方的半導體晶片後，介由接著薄片將半導體晶片安裝於BGA基板。安裝條件設為：溫度120℃、 壓力0.1MPa、1sec。接著，將安裝有半導體晶片的BGA基板用乾燥機在130℃下熱處理1小時，然後用密封樹脂(日東電工(股)製造，GE-100)封裝。密封條件設為：加熱溫度175℃、90秒。然後，在85℃、60%Rh、168小時的條件下進行吸濕，進而在設定為可在260℃以上保持10秒的IR回流焊爐中載置半導體封裝體。然後，用玻璃刀切斷半導體封裝體，用超聲波顯微鏡觀察其截面，確認接著薄片與BGA基板的邊界有無剝離。確認對9個半導體晶片進行，將發生剝離的半導體晶片為0個的情況設為○，將1個以上的情況設為×。 The subsequent sheet (thickness: 20 μm) was attached to a 10 mm square semiconductor wafer under the condition of a temperature of 40 ° C, and then the semiconductor wafer was mounted on the BGA substrate via the subsequent sheet. Installation conditions are set to: temperature 120 ° C, The pressure was 0.1 MPa and 1 sec. Next, the BGA substrate on which the semiconductor wafer was mounted was heat-treated at 130 ° C for 1 hour, and then sealed with a sealing resin (manufactured by Nitto Denko Co., Ltd., GE-100). The sealing conditions were set to: heating temperature 175 ° C, 90 seconds. Then, moisture absorption was performed under conditions of 85 ° C, 60% Rh, and 168 hours, and the semiconductor package was placed in an IR reflow furnace set to be held at 260 ° C or higher for 10 seconds. Then, the semiconductor package was cut with a glass knife, and the cross section was observed with an ultrasonic microscope to confirm whether or not the boundary between the sheet and the BGA substrate was peeled off. It was confirmed that 9 semiconductor wafers were used, and when the number of semiconductor wafers to be peeled off was 0, it was ○, and when one or more cases were used, it was set to ×.

1‧‧‧基材 1‧‧‧Substrate

2‧‧‧黏著劑層 2‧‧‧Adhesive layer

2a、2b‧‧‧部分 2a, 2b‧‧‧ part

3‧‧‧接著薄片 3‧‧‧ followed by thin slices

3a‧‧‧貼附部分 3a‧‧‧ Attached part

4‧‧‧半導體晶圓 4‧‧‧Semiconductor wafer

10‧‧‧切割‧晶粒接合薄膜 10‧‧‧Cutting ‧ die bonding film

11‧‧‧切割薄膜 11‧‧‧ cutting film

Claims (14)

一種接著薄片，其包含球狀氧化鋁填料和樹脂成分，所述樹脂成分包含高分子量成分(A)和低分子量成分(B)，相對於100重量份接著薄片，所述球狀氧化鋁填料的含量為78~88重量份，所述球狀氧化鋁填料的平均粒徑為2~9μm、比表面積為0.8~8.0m2/g，由所述高分子量成分(A)的重量/所述高分子量成分(A)和所述低分子量成分(B)的總重量表示的重量比為0.03~0.25。 A contiguous sheet comprising a spherical alumina filler and a resin component, the resin component comprising a high molecular weight component (A) and a low molecular weight component (B), the spherical alumina filler being relative to 100 parts by weight of the succeeding flakes The content is 78 to 88 parts by weight, and the spherical alumina filler has an average particle diameter of 2 to 9 μm and a specific surface area of 0.8 to 8.0 m 2 /g, and the weight of the high molecular weight component (A) is /high The weight ratio of the molecular weight component (A) to the total weight of the low molecular weight component (B) is from 0.03 to 0.25. 如請求項1所述的接著薄片，其中，在所述球狀氧化鋁填料的細微性分佈中，存在2個以上的峰，第一峰存在於0.2~0.8μm的粒徑範圍，第二峰存在於3~15μm的粒徑範圍，第二峰的粒徑/第一峰的粒徑為7~15。 The following sheet according to claim 1, wherein in the fine distribution of the spherical alumina filler, there are two or more peaks, and the first peak exists in a particle diameter range of 0.2 to 0.8 μm, and the second peak It exists in the particle size range of 3-15 micrometers, and the particle diameter of the second peak / the particle diameter of the first peak is 7-15. 如請求項1所述的接著薄片，其中，所述球狀氧化鋁填料用矽烷偶合劑進行了處理。 The succeeding sheet of claim 1, wherein the spherical alumina filler is treated with a decane coupling agent. 如請求項1所述的接著薄片，其中，所述低分子量成分(B)至少包含環氧樹脂和酚醛樹脂。 The following sheet according to claim 1, wherein the low molecular weight component (B) contains at least an epoxy resin and a phenol resin. 如請求項4所述的接著薄片，其中，所述環氧樹脂包含液態的雙酚型環氧樹脂，由所述液態的雙酚型環氧樹脂的重量/所述低分子量成分(B)的重量表示的重量比為0.1~0.6。 The following sheet according to claim 4, wherein the epoxy resin comprises a liquid bisphenol type epoxy resin, the weight of the liquid bisphenol type epoxy resin / the low molecular weight component (B) The weight ratio expressed by weight is 0.1 to 0.6. 如請求項1所述的接著薄片，其中，所述高分子量成分(A)為丙烯酸類橡膠。 The following sheet according to claim 1, wherein the high molecular weight component (A) is an acrylic rubber. 如請求項1所述的接著薄片，其中，所述高分子量成分(A)的玻璃化轉變溫度為0℃以下。 The following sheet according to claim 1, wherein the high molecular weight component (A) has a glass transition temperature of 0 ° C or lower. 如請求項1所述的接著薄片，其中，所述球狀氧化鋁填料的最大粒徑為20μm以下。 The succeeding sheet according to claim 1, wherein the spherical alumina filler has a maximum particle diameter of 20 μm or less. 如請求項1所述的接著薄片，其中，固化前的130℃下的熔融黏度為5~5000Pa．s。 The following sheet according to claim 1, wherein the melt viscosity at 130 ° C before curing is 5 to 5000 Pa. s. 如請求項1所述的接著薄片，其中，固化後的玻璃化轉變溫度為100℃以上，固化後的260℃下的拉伸儲能模量為10~1000MPa。 The following sheet according to claim 1, wherein the glass transition temperature after curing is 100 ° C or more, and the tensile storage modulus at 260 ° C after curing is 10 to 1000 MPa. 如請求項1所述的接著薄片，其中，固化前的拉伸試驗時的斷裂伸長率為10~200%。 The following sheet according to claim 1, wherein the elongation at break at the tensile test before curing is from 10 to 200%. 如請求項1所述的接著薄片，其厚度為30μm以下。 The following sheet according to claim 1 has a thickness of 30 μm or less. 如請求項1所述的接著薄片，其用作晶粒接合薄膜。 The succeeding sheet as described in claim 1 is used as a die-bonding film. 一種切割‧晶粒接合薄膜，其在帶黏著劑層的基材的所述黏著劑層上層疊有請求項1~13中任一項所述的接著薄片。 A dicing/grain bonding film in which the bonding sheet according to any one of claims 1 to 13 is laminated on the adhesive layer of a substrate with an adhesive layer.
TW103119213A 2013-06-04 2014-06-03 Next, the sheet, and the cut grain bonding film TWI649391B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013118065A JP6366228B2 (en) 2013-06-04 2013-06-04 Adhesive sheet and dicing die bonding film
JP2013-118065 2013-06-04

Publications (2)

Publication Number Publication Date
TW201504384A true TW201504384A (en) 2015-02-01
TWI649391B TWI649391B (en) 2019-02-01

Family

ID=52094293

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103119213A TWI649391B (en) 2013-06-04 2014-06-03 Next, the sheet, and the cut grain bonding film

Country Status (4)

Country Link
JP (1) JP6366228B2 (en)
KR (1) KR102267657B1 (en)
CN (1) CN104212375B (en)
TW (1) TWI649391B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6611424B2 (en) * 2014-10-28 2019-11-27 デクセリアルズ株式会社 Thermosetting adhesive composition and thermosetting adhesive sheet
JP2016219619A (en) * 2015-05-21 2016-12-22 日東電工株式会社 Adhesive sheet, dicing tape-integrated adhesive sheet, film, manufacturing method of semiconductor device, and semiconductor device
JP7033003B2 (en) * 2018-05-23 2022-03-09 日東電工株式会社 Dicing die bond film
JP7232387B2 (en) * 2018-09-07 2023-03-03 株式会社プロテリアル Adhesion method and laminated magnet
KR102376144B1 (en) 2018-11-14 2022-03-18 주식회사 엘지화학 Resin composition for bonding semiconductor, adhesive film for semiconductor, dicing diebonding film, and method for dicing of semiconductor wafer using the same
JP7394782B2 (en) * 2018-11-20 2023-12-08 太陽ホールディングス株式会社 High voltage withstand heat dissipating insulating resin composition and electronic components using the same
KR102524818B1 (en) 2019-08-22 2023-04-25 후루카와 덴키 고교 가부시키가이샤 Adhesive composition, film adhesive and manufacturing method thereof, semiconductor package using film adhesive and manufacturing method thereof
KR20220107926A (en) * 2021-01-26 2022-08-02 한화솔루션 주식회사 adhesive film with thermosetting property and coverlay film comprising the same
WO2023190321A1 (en) 2022-03-30 2023-10-05 古河電気工業株式会社 Composition for thermally conductive film-like adhesives, thermally conductive film-like adhesive, semiconductor package using thermally conductive film-like adhesive and method for producing same
CN116130563A (en) * 2023-04-14 2023-05-16 江西兆驰半导体有限公司 Substrate stripping method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000080340A (en) * 1998-06-22 2000-03-21 Toshiba Chem Corp Electric insulating adhesive for electronic device and on-board device
JP2009041019A (en) * 2003-01-07 2009-02-26 Sekisui Chem Co Ltd Curable resin composition, adhesive epoxy resin paste, adhesive epoxy resin sheet, conductive connection paste, conductive connection sheet, and electronic component joined body
JP5380806B2 (en) * 2006-08-31 2014-01-08 日立化成株式会社 Adhesive sheet, integrated sheet, semiconductor device, and method for manufacturing semiconductor device
JPWO2009001492A1 (en) * 2007-06-22 2010-08-26 住友ベークライト株式会社 Adhesive film and semiconductor device using the same
EP2452964A4 (en) * 2009-07-10 2014-06-11 Toray Industries Adhesive composition, adhesive sheet, circuit board and semiconductor device both produced using these, and processes for producing these
JP2011023607A (en) * 2009-07-16 2011-02-03 Nitto Denko Corp Exoergic die-bonding film
WO2011102170A1 (en) * 2010-02-19 2011-08-25 日本ゼオン株式会社 Thermally conductive pressure-sensitive adhesive composition, thermally conductive pressure-sensitive adhesive sheet, and electronic component
JP5566141B2 (en) * 2010-03-15 2014-08-06 リンテック株式会社 Adhesive composition, adhesive sheet and method for producing semiconductor device
JP2012186360A (en) 2011-03-07 2012-09-27 Nitto Denko Corp Dicing/die-bonding film and semiconductor element
JP2012186361A (en) 2011-03-07 2012-09-27 Nitto Denko Corp Dicing/die-bonding film and semiconductor element
JP5871428B2 (en) * 2011-03-16 2016-03-01 古河電気工業株式会社 High thermal conductive film adhesive composition, high thermal conductive film adhesive, semiconductor package using the same, and manufacturing method thereof
JP5541613B2 (en) * 2011-06-08 2014-07-09 信越化学工業株式会社 Thermally conductive adhesive composition, adhesive sheet, and thermally conductive dicing die attach film

Also Published As

Publication number Publication date
KR20140142674A (en) 2014-12-12
CN104212375A (en) 2014-12-17
TWI649391B (en) 2019-02-01
JP6366228B2 (en) 2018-08-01
CN104212375B (en) 2019-04-02
JP2014234482A (en) 2014-12-15
KR102267657B1 (en) 2021-06-21

Similar Documents

Publication Publication Date Title
TWI649391B (en) Next, the sheet, and the cut grain bonding film
TWI615452B (en) Film-like adhesive, dicing tape with film-like adhesive, method for manufacturing semiconductor device, and semiconductor device
TWI714540B (en) Conductive film adhesive, dicing tape with film adhesive, and manufacturing method of semiconductor device
TWI627252B (en) Film-like adhesive, dicing tape-integrated film-like adhesive, and method of manufacturing semiconductor device
TWI403568B (en) Thin film for fabrication of semiconductor and method of fabricating semiconductor apparatus
TW201629455A (en) Sheet for thermal bonding and sheet for thermal bonding with affixed dicing tape
TWI667318B (en) Die-bonding film, dicing die-bonding film and laminated film
TW201531550A (en) Film-like adhesive, dicing tape with film-like adhesive, method for manufacturing semiconductor device, and semiconductor device
TWI715586B (en) Dicing wafer bonding film, manufacturing method of semiconductor device, and semiconductor device
CN109451762B (en) Heat bonding sheet and heat bonding sheet with dicing tape
JP5580730B2 (en) Dicing die bond film and semiconductor element
JP2013038408A (en) Adhesive tape for fixing semiconductor wafer, method for manufacturing semiconductor chip and adhesive tape with adhesive film
TWI740984B (en) Sheets for heating and bonding, and sheets for heating and bonding with dicing tape
JP2012142368A (en) Dicing die bond film and semiconductor device
TW201631076A (en) Adhesive sheet, adhesive sheet with dicing sheet, laminated sheet and method of manufacturing semiconductor device
TW201739871A (en) Electronic device package tape
JP2018049932A (en) Heat bonding sheet and dicing tape-attached heat bonding sheet
JP2015130417A (en) Film adhesive, dicing tape with film adhesive, method for manufacturing semiconductor device and semiconductor device
TW202040658A (en) Dicing tape with bonding film characterized by allowing the adhesive layer of the UV curable dicing tape to ensure the retention of the annular frame even after UV irradiation
TWI656189B (en) Substrate, subsequent sheet with dicing sheet, and method of manufacturing semiconductor device
JP2012186361A (en) Dicing/die-bonding film and semiconductor element
TW201533215A (en) Conductive film-like adhesive and dicing tape with film-like adhesive
TW201513192A (en) Cutting/chip bonding film
JP6193627B2 (en) Sheet-shaped resin composition, back-grinding tape-integrated sheet-shaped resin composition, dicing tape-integrated sheet-shaped resin composition, semiconductor device manufacturing method, and semiconductor device
JP2015129225A (en) Film type adhesive, dicing tape with film type adhesive, method for manufacturing semiconductor device, and semiconductor device