TWI667318B - Die-bonding film, dicing die-bonding film and laminated film - Google Patents
Die-bonding film, dicing die-bonding film and laminated film Download PDFInfo
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- TWI667318B TWI667318B TW104110056A TW104110056A TWI667318B TW I667318 B TWI667318 B TW I667318B TW 104110056 A TW104110056 A TW 104110056A TW 104110056 A TW104110056 A TW 104110056A TW I667318 B TWI667318 B TW I667318B
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
本發明係提供可於不犧牲半導體裝置的情況下非破壞地觀察空隙之晶粒接合薄膜等。一種關於晶粒接合薄膜,其霧度為0%~25%。 The present invention provides a die-bonding film or the like that can observe voids non-destructively without sacrificing a semiconductor device. A grain-bonding film with a haze of 0% to 25%.
Description
本發明係關於晶粒接合薄膜、切割晶粒接合薄膜及層合薄膜。 This invention relates to a die-bonding film, a dicing die-bonding film, and a laminated film.
已知於將半導體晶片接著於金屬引線框等被黏物時使用晶粒接合薄膜的方法(例如參照專利文獻1)。 A method is known in which a die-bonding film is used when a semiconductor wafer is adhered to an adherend such as a metal lead frame (for example, refer to Patent Document 1).
於此等的方法中,有時在晶片接合後在晶粒接合薄膜中產生空隙。空隙使以耐吸濕回流焊、耐HAST(高加速應力試驗)等評價的半導體裝置的可靠性降低,導致半導體裝置的不良。 In these methods, voids are sometimes generated in the die-bonding film after wafer bonding. The void reduces the reliability of a semiconductor device evaluated by moisture absorption reflow resistance, HAST (High Accelerated Stress Test), and the like, and causes failure of the semiconductor device.
[專利文獻1]日本特開平6-145639號公報 [Patent Document 1] Japanese Unexamined Patent Publication No. 6-145639
以往之晶粒接合薄膜含有500nm左右的填料,因此不透明。因此,為了觀察晶粒接合薄膜中的空隙,一般使用超音波影像裝置(SAT)。但是,在利用超音波影像裝置進行觀察的情況下,需要將半導體裝置浸入水中,因此為了進行試驗,需要犧牲半導體裝置。 Conventional grain-bonding films contain opaque fillers of about 500 nm and are therefore opaque. Therefore, in order to observe the voids in the die-bonding film, an ultrasonic imaging device (SAT) is generally used. However, in the case of observation using an ultrasonic imaging device, the semiconductor device needs to be immersed in water. Therefore, it is necessary to sacrifice the semiconductor device in order to perform the test.
本發明的目的在於解決前述問題,提供可在不犧牲半導體裝置的情況下觀察空隙的晶粒接合薄膜、切割晶粒接合薄膜及層合薄膜。 An object of the present invention is to solve the foregoing problems, and to provide a die-bonding film, a dicing die-bonding film, and a laminated film that can observe voids without sacrificing a semiconductor device.
本發明係關於霧度為0%~25%之晶粒接合薄膜。本發明之晶粒接合薄膜的透明性高,因此可在不使用超音波影像裝置的情況下觀察空隙。因此,可在不犧牲半導體裝置的情況下進行觀察,可提高半導體裝置的成品率。另外,可降低半導體裝置的不良。 The invention relates to a die-bonding film having a haze of 0% to 25%. The grain-bonding film of the present invention has high transparency, so that voids can be observed without using an ultrasonic imaging device. Therefore, observation can be performed without sacrificing the semiconductor device, and the yield of the semiconductor device can be improved. In addition, defects in the semiconductor device can be reduced.
本發明之晶粒接合薄膜波長為600nm之光線的透射率超過85%為佳。若超過85%,則可目視觀察空隙。 It is preferable that the light transmittance of the light with a wavelength of 600 nm of the die-bonding film of the present invention exceeds 85%. If it exceeds 85%, the void can be observed visually.
本發明的晶粒接合薄膜波長為400nm之光線的透射率超過85%為佳。若超過85%,則可用空隙檢測裝置,具體地與圖像識別程式聯動的光學顯微鏡裝置等觀察空隙。 It is preferable that the light transmittance of the light with a wavelength of 400 nm of the die-bonding film of the present invention exceeds 85%. If it exceeds 85%, the gap can be observed with a gap detection device, specifically an optical microscope device linked with an image recognition program.
本發明的晶粒接合薄膜波長為400nm~600nm 的全部區域下的光線的透射率超過85%為佳。若超過85%,則可目視與用空隙檢測裝置觀察空隙。 The grain-bonding film of the present invention has a wavelength of 400 nm to 600 nm The transmittance of light in the entire area is preferably more than 85%. If it exceeds 85%, the gap can be observed visually and with a gap detection device.
本發明係尚關於一種切割晶粒接合薄膜,其具備:具有基材及配置在基材上的黏著劑層之切割膠帶、與配置在黏著劑層上的霧度為0%~25%之晶粒接合薄膜。 The present invention relates to a dicing die-bonding film, comprising: a dicing tape having a substrate and an adhesive layer disposed on the substrate; and a crystal having a haze of 0% to 25% disposed on the adhesive layer. Grain bonding film.
晶粒接合薄膜在拉長到200%的狀態下的波長為600nm的光線的透射率比未拉長的狀態下的波長為600nm的光線的透射率低5%以上為佳。藉由拉長晶粒接合薄膜,可容易地觀察到晶粒接合薄膜,因此可以容易地確認晶粒接合薄膜的有無。 The transmittance of light having a wavelength of 600 nm when the die-bonding film is stretched to 200% is preferably more than 5% lower than the transmittance of light having a wavelength of 600 nm when it is not stretched. Since the grain-bonding film can be easily observed by stretching the grain-bonding film, the presence or absence of the grain-bonding film can be easily confirmed.
但是,晶粒接合薄膜的透明性高時,難以知曉晶粒接合薄膜的位置,因此在將晶粒接合薄膜與切割膠帶貼合時難以進行對位。另外,在進行品質檢查時,有時無法檢測到晶粒接合薄膜形狀的異常。 However, when the transparency of the die-bonding film is high, it is difficult to know the position of the die-bonding film. Therefore, it is difficult to perform alignment when the die-bonding film is bonded to the dicing tape. In addition, when performing a quality inspection, an abnormality in the shape of the die-bonding film may not be detected.
因此,晶粒接合薄膜具備用於黏貼半導體晶圓的黏貼部及配置在黏貼部的周邊的非黏貼部,在非黏貼部設置有標記為佳。標記可光學地進行識別為佳。若在非黏貼部設置有標記,則在將晶粒接合薄膜與切割膠帶貼合時,可以容易地進行對位。另外,可以容易地判斷出晶粒接合薄膜的有無。另外,在進行品質檢查時,有時可檢測到晶粒接合薄膜形狀的異常。 Therefore, the die-bonding film includes an adhesive portion for attaching a semiconductor wafer and a non-adhesive portion arranged around the adhesive portion, and it is preferable to provide a mark on the non-adhesive portion. It is preferable that the mark is optically recognizable. If a mark is provided in a non-adhesion part, alignment can be performed easily when bonding a die-bonding film and a dicing tape. In addition, the presence or absence of a die-bonding film can be easily determined. In addition, an abnormality in the shape of the die-bonding film may be detected during quality inspection.
基材在波長為400nm~600nm的全部區域下的光線的透射率為0%~20%為佳。由此,在將切割晶粒接合薄膜與半導體晶圓貼合時,可以基材的邊緣等為基準進行 對位。 The transmittance of light of the substrate in all the regions with a wavelength of 400 nm to 600 nm is preferably 0% to 20%. Therefore, when the dicing die-bonding film is bonded to the semiconductor wafer, the edge of the substrate can be used as a reference. Alignment.
基材可以與黏著劑層接觸的第1主面及與第1主面相對的第2主面定義兩面。第2主面的表面粗糙度Ra為0.5μm~5μm為佳。由此,可使基材的透光率降低。 The first main surface that the substrate can contact with the adhesive layer and the second main surface opposite to the first main surface define two surfaces. The surface roughness Ra of the second main surface is preferably 0.5 μm to 5 μm. This can reduce the light transmittance of the substrate.
本發明係尚關於一種層合薄膜,其具備隔片、與配置在隔片上的切割晶粒接合薄膜。 The present invention also relates to a laminated film including a separator and a dicing die-bonding film disposed on the separator.
隔片具備與晶粒接合薄膜接觸的層合部及配置在層合部的外周的外周部為佳。在外周部設置有標記為佳。另外,在層合部的邊緣設置有標記為佳。若在外周部及/或層合部的邊緣設置有切口,則在將晶粒接合薄膜與切割膠帶貼合時,可以容易地進行對位。 The separator preferably includes a laminated portion in contact with the die-bonding film, and an outer peripheral portion arranged on the outer periphery of the laminated portion. It is preferable to provide a mark on an outer peripheral part. In addition, it is preferable to provide a mark on the edge of the laminated portion. If a notch is provided at the edge of the outer peripheral portion and / or the laminated portion, when the die-bonding film is bonded to the dicing tape, alignment can be easily performed.
標記為切口為佳。從可以容易地進行位置認識的理由出發,切口之深度為5μm~45μm為佳。 It is better to mark the cut. For reasons of easy position recognition, the depth of the cut is preferably 5 μm to 45 μm.
根據本發明,可提供在不犧牲半導體裝置的情況下非破壞地觀察空隙之晶粒接合薄膜、切割晶粒接合薄膜及層合薄膜。 According to the present invention, it is possible to provide a die-bonding film, a dicing die-bonding film, and a laminated film in which voids are observed non-destructively without sacrificing a semiconductor device.
1‧‧‧切割膠帶 1‧‧‧ cutting tape
2‧‧‧層合薄膜 2‧‧‧ laminated film
3‧‧‧晶粒接合薄膜 3‧‧‧ Grain Bonding Film
4‧‧‧半導體晶圓 4‧‧‧ semiconductor wafer
5‧‧‧半導體晶片 5‧‧‧ semiconductor wafer
6‧‧‧被黏物 6‧‧‧ Adhesive
61‧‧‧附有半導體晶片之被黏物 61‧‧‧ Adhesive with semiconductor chip
7‧‧‧焊線 7‧‧‧ welding wire
8‧‧‧密封樹脂 8‧‧‧sealing resin
9‧‧‧隔片 9‧‧‧ septa
10‧‧‧切割晶粒接合薄膜 10‧‧‧ Cutting Die Bonding Film
11‧‧‧基材 11‧‧‧ Substrate
11a‧‧‧第1主面 11a‧‧‧1st main face
11b‧‧‧第2主面 11b‧‧‧ 2nd main face
12‧‧‧黏著劑層 12‧‧‧ Adhesive layer
31‧‧‧黏貼部 31‧‧‧ Adhesive Department
32‧‧‧非黏貼部 32‧‧‧Non-adhesive section
91‧‧‧層合部 91‧‧‧Laminated Department
92‧‧‧外周部 92‧‧‧ Peripheral Department
93‧‧‧周邊部 93‧‧‧ Peripheral
301‧‧‧標記 301‧‧‧Mark
901‧‧‧切口 901‧‧‧ incision
[圖1]係晶粒接合薄膜之概略剖面圖。 [Fig. 1] A schematic cross-sectional view of a grain-bonding film.
[圖2]係切割晶粒接合薄膜之概略剖面圖。 [Fig. 2] A schematic cross-sectional view of a dicing die-bonding film.
[圖3]係層合薄膜之概略平面圖。 [Fig. 3] A schematic plan view of a laminated film.
[圖4]係將層合薄膜局部放大顯示的概略剖面圖。 Fig. 4 is a schematic cross-sectional view showing a partially enlarged laminated film.
[圖5]係顯示出在切割晶粒接合薄膜上配置有半導體晶圓之樣子的概略的剖面圖。 5 is a schematic cross-sectional view showing a state where a semiconductor wafer is arranged on a dicing die-bonding film.
[圖6]係顯示出將半導體晶元單片化後之樣子的概略的剖面圖。 6 is a schematic cross-sectional view showing a state where a semiconductor wafer is singulated.
[圖7]係附有半導體晶片的被黏物之概略剖面圖。 FIG. 7 is a schematic cross-sectional view of an adherend to which a semiconductor wafer is attached.
[圖8]係半導體裝置之概略剖面圖。 FIG. 8 is a schematic cross-sectional view of a semiconductor device.
[圖9]係變形例1所關於的晶粒接合薄膜之概略剖面圖。 9 is a schematic cross-sectional view of a die-bonding film according to a first modification.
[圖10]係變形例2所關於的層合薄膜之概略剖面圖。 10 is a schematic cross-sectional view of a laminated film according to a second modification.
[圖11]係變形例3所關於的層合薄膜之概略剖面圖。 11 is a schematic cross-sectional view of a laminated film according to Modification 3. FIG.
[圖12]為變形例4所關於的層合薄膜之概略剖面圖。 12 is a schematic cross-sectional view of a laminated film according to a fourth modification.
以下揭示出實施形態詳細地說明本發明,但本發明並不限定於此等實施形態。 Embodiments are described in detail below to explain the present invention, but the present invention is not limited to these embodiments.
(晶粒接合薄膜3) (Die-bonding film 3)
如圖1所示,晶粒接合薄膜3的形態為膜狀。晶粒接 合薄膜3之透明性高,因此可在不使用超音波影像裝置的情況下觀察空隙。因此,可在不犧牲半導體裝置的情況下進行觀察,可提高半導體裝置的成品率。另外,可降低半導體裝置的不良。 As shown in FIG. 1, the shape of the die-bonding film 3 is a film. Die bonding The composite film 3 has high transparency, so that voids can be observed without using an ultrasonic imaging device. Therefore, observation can be performed without sacrificing the semiconductor device, and the yield of the semiconductor device can be improved. In addition, defects in the semiconductor device can be reduced.
晶粒接合薄膜3之霧度為25%以下,20%以下為佳,5%以下更佳,10%以下最佳。由於為25%以下,因此透明性高,可在不使用超音波影像裝置的情況下觀察空隙。晶粒接合薄膜3的霧度的下限沒有特別限制,例如為0%以上。晶粒接合薄膜3的霧度的下限例如可以為0.5%以上。 The haze of the die-bonding film 3 is 25% or less, preferably 20% or less, more preferably 5% or less, and most preferably 10% or less. Since it is 25% or less, it has high transparency and allows observation of voids without using an ultrasonic imaging device. The lower limit of the haze of the die-bonding film 3 is not particularly limited, and is, for example, 0% or more. The lower limit of the haze of the die-bonding film 3 may be, for example, 0.5% or more.
又,霧度可以藉由實施例中記載的方法進行測定。 The haze can be measured by the method described in the examples.
霧度可以經由無機填充材料進行控制。例如,經由不摻合無機填充材料,使用平均粒徑小的無機填充材料,可減小霧度。 Haze can be controlled via an inorganic filler. For example, the haze can be reduced by using an inorganic filler with a small average particle diameter without incorporating an inorganic filler.
晶粒接合薄膜3中,波長為600nm的光線的透射率超過85%為佳,90%以上為較佳。若超過85%,則可目視觀察空隙。又,觀察中可以使用光學顯微鏡等。 In the die-bonding film 3, the transmittance of light having a wavelength of 600 nm is preferably more than 85%, and more preferably 90% or more. If it exceeds 85%, the void can be observed visually. For observation, an optical microscope or the like can be used.
波長為600nm的光線的透射率可以經由填料的粒徑進行控制。例如,經由減小填料的粒徑,可得到超過85%的透射率。 The transmittance of light having a wavelength of 600 nm can be controlled via the particle diameter of the filler. For example, by reducing the particle diameter of the filler, a transmittance exceeding 85% can be obtained.
晶粒接合薄膜3中,波長為400nm之光線的透射率超過85%為佳。若超過85%,則可用空隙檢測裝置,具體地光學顯微鏡等觀察空隙。 In the die-bonding film 3, it is preferable that the transmittance of light having a wavelength of 400 nm exceeds 85%. If it exceeds 85%, the gap can be observed with a gap detection device, specifically an optical microscope or the like.
波長為400nm之光線的透射率可以經由填料 的粒徑進行控制。例如,經由減小填料的粒徑,可得到超過85%的透射率。 The transmittance of light with a wavelength of 400nm can be passed through the filler The particle size is controlled. For example, by reducing the particle diameter of the filler, a transmittance exceeding 85% can be obtained.
晶粒接合薄膜3中,波長為400nm~600nm的全部區域下的光線的透射率超過85%為佳。若超過85%,則可目視、用空隙檢測裝置觀察空隙。 In the die-bonding film 3, it is preferable that the transmittance of light in all the regions having a wavelength of 400 nm to 600 nm exceeds 85%. If it exceeds 85%, the gap can be observed visually and with a gap detection device.
光線的透射率可以藉由實施例中記載的方法進行測定。 The transmittance of light can be measured by the method described in the examples.
晶粒接合薄膜3中,在拉長到200%的狀態下的波長為600nm的光線的透射率比未拉長的狀態下的波長為600nm的光線的透射率低5%以上為佳。藉由拉長晶粒接合薄膜3,可容易地觀察到晶粒接合薄膜3,因此可以容易地確認晶粒接合薄膜3的有無。切割晶粒接合薄膜中,藉由拉長切割晶粒接合薄膜,可以容易地確認晶粒接合薄膜3的有無。又,透射率之所以降低,推測是由於經由進行拉長,晶粒接合薄膜3中所含之聚合物產生取向性的緣故。 In the die-bonding film 3, the transmittance of light having a wavelength of 600 nm in a stretched state to 200% is preferably lower than the transmittance of a light having a wavelength of 600 nm in a non-stretched state by 5% or more. By extending the die-bonding film 3, the die-bonding film 3 can be easily observed, and therefore the presence or absence of the die-bonding film 3 can be easily confirmed. In the dicing die-bonding film, the presence or absence of the crystalline die-bonding film 3 can be easily confirmed by stretching the dicing die-bonding film. The reason why the transmittance is lowered is presumed to be that the orientation of the polymer contained in the crystal grain bonding film 3 is caused by stretching.
晶粒接合薄膜3中,在拉長到200%的狀態下的波長為600nm的光線的透射率為70%以下為佳,60%以下為較佳。若為70%以下,則可以容易地確認晶粒接合薄膜3的有無。在拉長到200%的狀態下的波長為600nm的光線之透射率的下限沒有特別限定,例如為5%。 In the die-bonding film 3, the transmittance of light having a wavelength of 600 nm in a state of being stretched to 200% is preferably 70% or less, and more preferably 60% or less. If it is 70% or less, the presence or absence of the die-bonding film 3 can be easily confirmed. The lower limit of the transmittance of the light having a wavelength of 600 nm in a state of being stretched to 200% is not particularly limited, and is, for example, 5%.
晶粒接合薄膜3中,在拉長到5%的狀態下的波長為600nm的光線的透射率為75%以上為佳,較佳為80%以上。若為80%以上,則在擴張後亦可保持透明性。 In the die-bonding film 3, the transmittance of light having a wavelength of 600 nm in a state of being stretched to 5% is preferably 75% or more, and more preferably 80% or more. If it is 80% or more, transparency can be maintained even after expansion.
晶粒接合薄膜3具有熱硬化性為佳。 The die-bonding film 3 preferably has thermosetting properties.
晶粒接合薄膜3包含熱塑性樹脂為佳。作為熱塑性樹脂,可舉出:天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍與6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸類樹脂、PET與PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂或氟樹脂等。此等熱塑性樹脂中,離子性雜質少、耐熱性高、可確保半導體元件的可靠性之丙烯酸類樹脂為特別佳。 The die-bonding film 3 preferably contains a thermoplastic resin. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, neoprene, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutadiene. Resins, polycarbonate resins, thermoplastic polyimide resins, polyamido resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamidoamine醯 Imine resin or fluororesin. Among these thermoplastic resins, acrylic resins having particularly low ionic impurities, high heat resistance, and ensuring the reliability of semiconductor elements are particularly preferred.
作為丙烯酸類樹脂,沒有特別限制,可舉出以1種或2種以上具有碳數30以下,特別是碳數4~18的直鏈或支鏈烷基的丙烯酸或甲基丙烯酸之酯為成分的聚合物(丙烯酸類共聚物)等。作為前述烷基,可舉出例如:甲基、乙基、丙基、異丙基、正丁基、叔丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或十二烷基等。 The acrylic resin is not particularly limited, and examples thereof include one or two or more types of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having a carbon number of 30 or less, particularly 4 to 18 carbon atoms. Polymers (acrylic copolymers) and the like. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, tert-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, ten Octyl or dodecyl and the like.
另外,作為形成聚合物(丙烯酸類共聚物)的其他單體,沒有特別限制,可舉出例如:丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸或巴豆酸等含羧基單體、馬來酸酐或衣康酸酐等酸酐單體;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯 酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)甲酯等含羥基單體;苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯醯胺基-2-甲基丙磺酸、(甲基)丙烯醯胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等含磺酸基單體;或者丙烯醯磷酸-2-羥基乙酯等含磷酸基單體。 The other monomers forming the polymer (acrylic copolymer) are not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, Carboxyl-containing monomers such as fumaric acid or crotonic acid, anhydride monomers such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth) acrylate, (meth) propylene 2-hydroxypropyl acid, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate , 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) methyl acrylate and other hydroxyl-containing monomers; styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamidoamine Sulfonic acid group-containing monomers such as 2-methylpropanesulfonic acid, (meth) acrylamidoaminopropanesulfonic acid, sulfopropyl (meth) acrylate, or (meth) acrylamidooxynaphthalenesulfonic acid; or Phosphate group-containing monomers such as acrylic acid 2-hydroxyethyl phosphate.
丙烯酸類樹脂中,重量平均分子量為10萬以上的丙烯酸類樹脂為佳,30萬~300萬的丙烯酸類樹脂為較佳,更佳為50萬~200萬的丙烯酸類樹脂。這是因為,若在上述數值範圍內,則接著性及耐熱性優異。又,重量平均分子量係經由GPC(滲透凝膠色譜)進行測定、且經由聚苯乙烯換算而算出的值。 Among the acrylic resins, acrylic resins having a weight average molecular weight of 100,000 or more are preferred, 300,000 to 3,000,000 acrylic resins are more preferred, and 500,000 to 2 million acrylic resins are more preferred. This is because if it is within the above numerical range, the adhesion and heat resistance are excellent. The weight average molecular weight is a value measured by GPC (permeation gel chromatography) and calculated by polystyrene conversion.
晶粒接合薄膜3中的熱塑性樹脂的含量為5重量%以上為佳,較佳為10重量%以上,更佳為30重量%以上。熱塑性樹脂的含量為90重量%以下為佳,較佳為80重量%以下,更佳為70重量%以下。 The content of the thermoplastic resin in the die-bonding film 3 is preferably 5% by weight or more, more preferably 10% by weight or more, and even more preferably 30% by weight or more. The content of the thermoplastic resin is preferably 90% by weight or less, more preferably 80% by weight or less, and even more preferably 70% by weight or less.
晶粒接合薄膜3含有熱硬化性樹脂為佳。由此,可提高熱穩定性。 The die-bonding film 3 preferably contains a thermosetting resin. Thereby, thermal stability can be improved.
作為熱硬化性樹脂,可舉出:酚醛樹脂、氨基樹脂、不飽和聚酯樹脂、環氧樹脂、聚氨酯樹脂、聚矽氧樹脂、或熱硬化性聚醯亞胺樹脂等。特別佳為腐蝕半導體元件的離子性雜質等的含量少的環氧樹脂。另外,作為 環氧樹脂的硬化劑,酚醛樹脂為佳。 Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a urethane resin, a silicone resin, or a thermosetting polyimide resin. Particularly preferred is an epoxy resin with a low content of ionic impurities and the like that corrode semiconductor elements. Also, as Hardeners for epoxy resins, preferably phenolic resins.
作為環氧樹脂,沒有特別限制,可使用例如:雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、芴型、苯酚酚醛型、鄰甲酚酚醛型、三羥苯基甲烷型、四(羥苯基)乙烷型等雙官能環氧樹脂與多官能環氧樹脂、或者乙內醯脲型、異氰脲酸三縮水甘油酯型或縮水甘油胺型等的環氧樹脂。此等環氧樹脂中,特別佳為酚醛型環氧樹脂、聯苯型環氧樹脂、三羥苯基甲烷型環氧樹脂或四(羥苯基)乙烷型環氧樹脂。這是因為:這些環氧樹脂與作為硬化劑的酚醛樹脂的反應性好,且耐熱性等優異。 The epoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, Bifunctional epoxy resins and polyfunctional epoxy resins such as naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetrakis (hydroxyphenyl) ethane type, or hydantoin Type, isocyanurate type triglycidyl ester type or glycidylamine type epoxy resin. Among these epoxy resins, phenolic epoxy resin, biphenyl epoxy resin, trihydroxyphenylmethane epoxy resin or tetrakis (hydroxyphenyl) ethane epoxy resin are particularly preferred. This is because these epoxy resins have good reactivity with a phenol resin as a hardener and are excellent in heat resistance and the like.
酚醛樹脂作為環氧樹脂的硬化劑發揮作用,可舉出例如:苯酚酚醛樹脂、苯酚芳烷基樹脂、甲酚酚醛樹脂、叔丁基苯酚酚醛樹脂、壬基苯酚酚醛樹脂等酚醛型酚醛樹脂、甲階酚醛型酚醛樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。此等酚醛樹脂中苯酚酚醛樹脂、苯酚芳烷基樹脂為特別佳。這是因為可以提高半導體裝置的連接可靠性。 Phenolic resins function as hardeners for epoxy resins, and examples include phenolic resins such as phenol novolac resin, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac resin, and nonylphenol novolac resin, Resole phenolic resin, polyhydroxystyrene such as polyparahydroxystyrene, and the like. Among these phenol resins, phenol novolac resin and phenol aralkyl resin are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.
關於環氧樹脂與酚醛樹脂的摻合比例,例如以相對於環氧樹脂成分中的環氧基1當量,酚醛樹脂中的羥基達到0.5~2.0當量的方式進行摻合為佳。較佳為0.8~1.2當量。即,這是因為:兩者的摻合比例如果在前述範圍以外,則硬化反應進行得不充分,硬化物的特性容易變差。 The blending ratio of the epoxy resin and the phenol resin is preferably blended such that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents relative to 1 equivalent of the epoxy group in the epoxy resin component. It is preferably 0.8 to 1.2 equivalents. That is, if the blending ratio of the two is outside the above range, the curing reaction does not proceed sufficiently, and the characteristics of the cured product are liable to deteriorate.
晶粒接合薄膜3中的熱硬化性樹脂的含量5重量%以上為加,10重量%以上為較佳,更佳30重量%以上。熱硬化性樹脂的含量為90重量%以下為加,較佳為80重量%以下,更佳為70重量%以下。 The content of the thermosetting resin in the die-bonding film 3 is 5% by weight or more, more preferably 10% by weight or more, and more preferably 30% by weight or more. The content of the thermosetting resin is 90% by weight or less, preferably 80% by weight or less, and more preferably 70% by weight or less.
晶粒接合薄膜3可以含有無機填充材料。為了提高透明性,使用平均粒徑小的無機填充材料為佳。 The die-bonding film 3 may contain an inorganic filler. In order to improve transparency, an inorganic filler having a small average particle diameter is preferably used.
無機填充材料的平均粒徑為150nm以下為佳,較佳為100nm以下,更佳為80nm以下,特別佳為50nm以下。若為150nm以下,則可提高晶粒接合薄膜3的透明性。另一方面,無機填充材料的平均粒徑為10nm以上為佳,較佳為25nm以上。若為10nm以上,則可防止填料的凝聚所致的透射率的降低。 The average particle diameter of the inorganic filler is preferably 150 nm or less, more preferably 100 nm or less, more preferably 80 nm or less, and particularly preferably 50 nm or less. If it is 150 nm or less, the transparency of the die-bonding film 3 can be improved. On the other hand, the average particle diameter of the inorganic filler is preferably 10 nm or more, and more preferably 25 nm or more. If it is 10 nm or more, the fall of the transmittance by the aggregation of a filler can be prevented.
又,經由使用從母集團任意萃取的試樣,利用雷射繞射散射式粒度分布測定裝置進行測定,由此可導出平均粒徑。 The average particle diameter can be derived by using a sample arbitrarily extracted from the parent group and measuring with a laser diffraction scattering particle size distribution measuring device.
作為無機填充材料,可舉出例如,石英玻璃、滑石、二氧化矽(熔融二氧化矽與結晶二氧化矽等)、氧化鋁、氮化鋁、氮化矽、氮化硼等。作為無機填充材料,可以使用具有導電性的材料為佳。作為具有導電性的無機填充材料,可舉出例如,焊料、鎳、銅、銀、金等。其中,從可良好地降低線膨脹係數的理由,二氧化矽、氧化鋁為佳,較佳為二氧化矽。 Examples of the inorganic filler include quartz glass, talc, silicon dioxide (fused silicon dioxide and crystalline silicon dioxide, etc.), aluminum oxide, aluminum nitride, silicon nitride, and boron nitride. As the inorganic filler, a material having conductivity can be preferably used. Examples of the conductive inorganic filler include solder, nickel, copper, silver, and gold. Among them, from the reason that the coefficient of linear expansion can be reduced well, silicon dioxide and aluminum oxide are preferred, and silicon dioxide is more preferred.
作為二氧化矽,二氧化矽粉末為佳,較佳為熔融二氧化矽粉末。作為熔融二氧化矽粉末,可舉出:球 狀熔融二氧化矽粉末、破碎熔融二氧化矽粉末,但從流動性的觀點出發,球狀熔融二氧化矽粉末為佳。 As the silicon dioxide, a silicon dioxide powder is preferable, and a fused silicon dioxide powder is preferable. Examples of the fused silica powder include balls The fused silica powder is in the form of a powder, and the fused silica powder is crushed in the form of a powder, but from the viewpoint of fluidity, a spherical fused silica powder is preferable.
晶粒接合薄膜3中的無機填充材料的含量為10重量%以上為佳,較佳為30重量%以上。另一方面,無機填充材料的含量為90重量%以下為佳,較佳為80重量%以下,更佳為70重量%以下。 The content of the inorganic filler in the die-bonding film 3 is preferably 10% by weight or more, and more preferably 30% by weight or more. On the other hand, the content of the inorganic filler is preferably 90% by weight or less, more preferably 80% by weight or less, and even more preferably 70% by weight or less.
晶粒接合薄膜3中,除所述成分以外,還可以適當含有膜製造中一般使用的摻合劑,例如交聯劑等。 The die-bonding film 3 may contain, in addition to the above-mentioned components, an admixture such as a cross-linking agent or the like generally used in film production.
晶粒接合薄膜3可以藉由一般的方法製造。例如,製作含有前述各成分的接著劑組合物溶液,在基材隔片上以達到規定厚度的方式塗佈接著劑組合物溶液,形成塗佈膜後,使該塗佈膜乾燥,由此可以製造出晶粒接合薄膜3。 The die-bonding film 3 can be produced by a general method. For example, it is possible to produce an adhesive composition solution containing the aforementioned components, apply the adhesive composition solution to a predetermined thickness on a substrate separator, form a coating film, and then dry the coating film. Out of the die bonding film 3.
作為接著劑組合物溶液中使用的溶劑,沒有特別限定,可將前述各成分均勻地溶解、混煉或分散的有機溶劑為佳。可舉出例如,二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮、丙酮、甲乙酮,環己酮等酮系溶劑,甲苯、二甲苯等。塗佈方法無特別限定。作為溶劑塗敷的方法,可舉例舉例,刮刀塗佈機(die coater)、凹版塗佈機、輥塗佈機、反向塗佈機、缺角輪塗佈機(comma coater)、pipe doctor塗佈機、網版印刷等。其中,從塗佈厚度的均勻性高的觀點出發,狹縫式塗佈機為佳。 The solvent used in the solution of the adhesive composition is not particularly limited, and an organic solvent capable of uniformly dissolving, kneading, or dispersing the aforementioned components is preferable. Examples include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone; toluene, xylene, and the like. The coating method is not particularly limited. Examples of the solvent coating method include a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, and a pipe doctor. Cloth machine, screen printing, etc. Among them, a slit coater is preferred from the viewpoint of high uniformity of coating thickness.
作為基材隔片,可以使用聚對苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、與藉由氟系剝離劑、長 鏈烷基丙烯酸酯系剝離劑等剝離劑進行表面塗佈後的塑膠膜與紙等。作為接著劑組合物溶液的塗佈方法,可舉出例如:輥塗敷、網版塗敷、凹版塗敷等。另外,塗佈膜的乾燥條件沒有特別限定,例如可以在乾燥溫度70~160℃、乾燥時間1~5分鐘的條件下進行。 As the substrate separator, polyethylene terephthalate (PET), polyethylene, polypropylene, and a fluorine-based release agent, long Surface-coated plastic film, paper, and the like after a release agent such as an alkyl acrylate-based release agent. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. In addition, the drying conditions of the coating film are not particularly limited, and may be performed, for example, under conditions of a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes.
作為晶粒接合薄膜3之製造方法,例如亦適合採用如下的方法等:將上述各成分用混合機混合,將所得到的混合物壓製成形來製造晶粒接合薄膜3。作為混合機,可舉出行星式混合機等。 As a method for producing the die-bonding film 3, for example, a method such as mixing the above components with a mixer and pressing the obtained mixture to form the die-bonding film 3 is also suitable. Examples of the mixer include a planetary mixer and the like.
晶粒接合薄膜3的厚度沒有特別限定,5μm以上為佳,較佳為15μm以上。若小於5μm,則有時產生不與出現翹曲的半導體晶圓與半導體晶片接著的部位,從而接著面積變得不穩定。另外,晶粒接合薄膜3的厚度100μm以下為佳,較佳為50μm以下。若超過100μm,則有時晶粒接合薄膜3由於晶片貼裝的載荷而過度擠出,從而污染焊盤。 The thickness of the die-bonding film 3 is not particularly limited, but is preferably 5 μm or more, and more preferably 15 μm or more. If it is less than 5 μm, a portion that does not adhere to the semiconductor wafer and the semiconductor wafer that are warped may be generated, and the bonding area may become unstable. The thickness of the die-bonding film 3 is preferably 100 μm or less, and more preferably 50 μm or less. If it exceeds 100 μm, the die-bonding film 3 may be excessively extruded due to the load of the wafer mounting, and the pad may be contaminated.
晶粒接合薄膜3可使用於半導體裝置之製造。具體而言之,可使用於將被黏物與半導體晶片接著。作為被黏物,可舉例:引線框、中介層、半導體晶片等。 The die-bonding film 3 can be used for manufacturing a semiconductor device. Specifically, it can be used for bonding an adherend to a semiconductor wafer. Examples of the adherend include a lead frame, an interposer, and a semiconductor wafer.
晶粒接合薄膜3係以切割晶粒接合薄膜的形態使用為佳。若以該形態使用,則可以對黏貼於切割晶粒接合薄膜的狀態的半導體晶圓進行操作,因此可以減少單獨對半導體晶圓進行操作的機會。 The die-bonding film 3 is preferably used in a form in which the die-bonding film is cut. When used in this form, the semiconductor wafer can be handled while being stuck to the dicing die-bonding film, so the chances of operating the semiconductor wafer alone can be reduced.
(切割晶粒接合薄膜10) (Cut the die-bonding film 10)
如圖2所示,切割晶粒接合薄膜10具備:切割膠帶1、及配置在切割膠帶1上之晶粒接合薄膜3。 As shown in FIG. 2, the dicing die-bonding film 10 includes a dicing tape 1 and a die-bonding film 3 arranged on the dicing tape 1.
切割膠帶1具備:基材11及配置在基材11上的黏著劑層12。晶粒接合薄膜3配置在黏著劑層12上。 The dicing tape 1 includes a base material 11 and an adhesive layer 12 arranged on the base material 11. The die-bonding film 3 is disposed on the adhesive layer 12.
基材11中,波長為400nm~600nm的全部區域下的光線的透射率低為佳。這是為了在將切割晶粒接合薄膜10與半導體晶圓4貼合時,可以基材11的邊緣等為基準進行對位。波長為400nm~600nm的全部區域下的光線的透射率為0%~20%為佳,較佳為0%~10%。若為20%以下,則可以基材11的邊緣等為基準進行對位。 In the base material 11, it is preferable that the transmittance of light in all the regions having a wavelength of 400 nm to 600 nm is low. This is because when the dicing die-bonding film 10 is bonded to the semiconductor wafer 4, alignment can be performed with reference to the edge of the substrate 11 or the like. The transmittance of light in all regions with a wavelength of 400 nm to 600 nm is preferably 0% to 20%, and more preferably 0% to 10%. If it is 20% or less, alignment can be performed using the edge of the substrate 11 or the like as a reference.
基材11係以與黏著劑層12接觸的第1主面11a及與第1主面11a相對的第2主面11b定義兩面。第2主面11b的表面粗糙度Ra0.5μm以上為佳,較佳為1μm以上。若為0.5μm以上,則使光散射而實現不透明化,因此可利用感測器進行位置認識。另一方面,第2主面11b的表面粗糙度Ra的上限沒有特別限定。第2主面11b的表面粗糙度Ra的上限例如為5μm。 The base material 11 defines two surfaces with a first main surface 11 a in contact with the adhesive layer 12 and a second main surface 11 b opposite to the first main surface 11 a. The surface roughness Ra of the second main surface 11b is preferably 0.5 μm or more, and more preferably 1 μm or more. If it is 0.5 μm or more, light is scattered and opaque is achieved. Therefore, the sensor can be used for position recognition. On the other hand, the upper limit of the surface roughness Ra of the second principal surface 11b is not particularly limited. The upper limit of the surface roughness Ra of the second main surface 11b is, for example, 5 μm.
作為基材11,可舉例:低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲 基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯基硫醚、芳族聚醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、聚矽氧烷樹脂、金屬(箔)、紙等。 Examples of the substrate 11 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymerization. Polyolefins such as propylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene- (meth) acrylic copolymers, ethylene- (methyl Base) acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate and other polyesters , Polycarbonate, polyimide, polyether ether ketone, polyimide, polyether imide, polyimide, fully aromatic polyimide, polyphenylene sulfide, aromatic polyimide (paper ), Glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, polysiloxane resin, metal (foil), paper, etc.
基材11中,為了使位置認識變得容易,可包含染料與顏料。 The base material 11 may include a dye and a pigment in order to facilitate position recognition.
基材11尚具有紫外線透射性為佳。 It is preferable that the substrate 11 has ultraviolet transmittance.
為了提高與鄰接層的密合性、保持性等,基材11的表面可實施慣用的表面處理,例如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學或物理處理、藉由底塗劑(例如,後述的黏著物質)的塗佈處理。 In order to improve adhesion and retention with the adjacent layer, the surface of the substrate 11 may be subjected to conventional surface treatments, such as chemical or physical treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, and ionizing radiation treatment The coating process is performed by a primer (for example, an adhesive substance described later).
基材11的厚度可以沒有特別限制地適當確定,但一般為5μm~200μm左右。 The thickness of the base material 11 can be appropriately determined without any particular limitation, but is generally about 5 μm to 200 μm.
作為黏著劑層12的形成中使用的黏著劑,沒有特別限制,例如,可使用丙烯酸系黏著劑、橡膠系黏著劑等一般的壓敏性接著劑。作為壓敏性接著劑,從半導體晶圓與玻璃等避忌污染的電子零件的之藉由超純水與醇等有機溶劑的清潔洗滌性等方面考慮,以丙烯酸系聚合物為基礎聚合物的丙烯酸系黏著劑為佳。 The pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 12 is not particularly limited. For example, a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive can be used. As a pressure-sensitive adhesive, from the aspects of cleanliness and cleanability of ultra-pure water and organic solvents such as semiconductor wafers and glass to avoid contamination of electronic parts, acrylic polymers based on acrylic polymers An adhesive is preferred.
作為丙烯酸系聚合物,可舉例使用(甲基) 丙烯酸烷基酯(例如,甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、仲丁酯、叔丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基之碳數1~30、特別是碳數4~18的直鏈狀或支鏈狀的烷基酯等)以及(甲基)丙烯酸環烷基酯(例如,環戊酯、環己酯等)中的1種或2種以上作為單體成分的丙烯酸系聚合物等。又,(甲基)丙烯酸酯係指丙烯酸酯及/或甲基丙烯酸酯,本發明的(甲基)全部具有同樣的含義。 Examples of the acrylic polymer include (meth) Alkyl acrylates (e.g. methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isoamyl, hexyl, heptyl, octyl , 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, tridecyl, tetradecyl, cetyl Esters, octadecyl esters, eicosyl esters and other alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters) and (meth) acrylic acid One or more cycloalkyl esters (for example, cyclopentyl ester, cyclohexyl ester, etc.) are acrylic polymers and the like as monomer components. Moreover, (meth) acrylate means an acrylate and / or a methacrylate, and all (meth) of this invention has the same meaning.
為了改善凝聚力、耐熱性等,丙烯酸系聚合物可以根據需要而包含可與前述(甲基)丙烯酸烷基酯或環烷基酯共聚的其他單體成分所對應的單元。作為這樣的單體成分,可舉例:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等含羧基單體;馬來酸酐、衣康酸酐等酸酐單體;(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-4-羥基丁酯、(甲基)丙烯酸-6-羥基己酯、(甲基)丙烯酸-8-羥基辛酯、(甲基)丙烯酸-10-羥基癸酯、(甲基)丙烯酸-12-羥基月桂酯、(甲基)丙烯酸-(4-羥甲基環己基)甲酯等含羥基單體;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺基-2-甲基丙磺酸、(甲基)丙烯醯胺基丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基單體; 2-羥基乙基丙烯醯基磷酸酯等含磷酸基單體;丙烯醯胺;丙烯腈等。此等可共聚單體成分可使用1種或2種以上。此等可共聚單體的使用量為全部單體成分的40重量%以下為佳。 In order to improve cohesion, heat resistance, and the like, the acrylic polymer may include units corresponding to other monomer components that can be copolymerized with the alkyl (meth) acrylate or cycloalkyl ester as necessary. Examples of such monomer components include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl monomers; anhydride monomers such as maleic anhydride, itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate Ester, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (Meth) acrylic acid- (4-hydroxymethylcyclohexyl) methyl ester and other hydroxyl-containing monomers; styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamidoamino-2-methylpropane Sulfonic acid group-containing monomers such as sulfonic acid, (meth) acrylamidoaminopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acrylamidooxynaphthalenesulfonic acid; Phosphate group-containing monomers such as 2-hydroxyethylpropenylphosphonium phosphate; acrylamide; acrylonitrile and the like. These copolymerizable monomer components may be used singly or in combination of two or more kinds. The use amount of these copolymerizable monomers is preferably 40% by weight or less of the total monomer components.
另外,為了進行交聯,丙烯酸系聚合物也可以根據需要含有多官能性單體等作為共聚用單體成分。作為這樣的多官能性單體,可舉例:己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等。此等多官能性單體亦可以使用1種或者2種以上。從黏著特性等觀點出發,多官能性單體的使用量為全部單體成分的30重量%以下為佳。 In addition, for crosslinking, the acrylic polymer may contain a polyfunctional monomer or the like as a comonomer component as necessary. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, and Pentylene glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylic acid Esters, epoxy (meth) acrylates, polyester (meth) acrylates, urethane (meth) acrylates, and the like. These polyfunctional monomers may be used alone or in combination of two or more. From the viewpoint of adhesive properties and the like, it is preferable that the amount of the polyfunctional monomer used is 30% by weight or less of the total monomer components.
丙烯酸系聚合物可以經由將單一單體或者2種以上單體混合物聚合而得到。聚合可以藉由溶液聚合、乳化聚合、塊狀聚合、懸浮聚合等任意方式進行。從防止污染潔淨的被黏物等方面考慮,低分子量物質的含量小為佳。從該觀點出發,丙烯酸系聚合物的數平均分子量為30萬以上為佳,更佳為40萬~300萬左右。 The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. From the perspective of preventing contamination of clean adherends, the content of low molecular weight substances is preferably small. From this viewpoint, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.
另外,為了提高作為基礎聚合物的丙烯酸系聚合物等的數平均分子量,前述黏著劑中可以適當使用外 部交聯劑。作為外部交聯方法的具體方法,可舉出:添加多異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂的交聯劑進行反應的方法。在使用外部交聯劑的情況下,其使用量可以根據與應交聯的基礎聚合物的平衡、以及作為黏著劑的使用用途來適當確定。一般而言,相對於前述基礎聚合物100重量份,摻合5重量份左右以下為佳,較佳為摻合0.1~5重量份。另外,根據需要,除前述成分之外,在黏著劑中還可以使用以往公知的各種增黏劑、抗老化劑等添加劑。 In addition, in order to increase the number average molecular weight of an acrylic polymer or the like as a base polymer, an external agent may be appropriately used in the adhesive. 部 crosslinking agent. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, and a melamine-based crosslinking agent to perform a reaction. When an external cross-linking agent is used, its use amount can be appropriately determined depending on the balance with the base polymer to be cross-linked and the use application as an adhesive. Generally speaking, it is preferable to blend about 5 parts by weight or less with respect to 100 parts by weight of the base polymer, and it is more preferable to blend 0.1 to 5 parts by weight. In addition, in addition to the aforementioned components, additives such as various conventionally known thickeners and anti-aging agents may be used for the adhesive, if necessary.
黏著劑層12可藉由放射線硬化型黏著劑形成。放射線硬化型黏著劑可以經由照射紫外線等放射線使交聯度增大,從而易於使其黏著力下降。 The adhesive layer 12 can be formed by a radiation-hardening adhesive. The radiation-curable adhesive can increase the degree of cross-linking by irradiating radiation such as ultraviolet rays, thereby easily reducing its adhesion.
放射線硬化型黏著劑可沒有特別限制地使用具有碳-碳雙鍵等放射線硬化性官能基,且顯示出黏著性的黏著劑。作為放射線硬化型黏著劑,可例示例如:在前述丙烯酸系黏著劑、橡膠系黏著劑等一般的壓敏性黏著劑中摻合有放射線硬化性的單體成分與低聚物成分的添加型的放射線硬化型黏著劑。 As the radiation-curable adhesive, an adhesive having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. As the radiation-curable adhesive, for example, an additive type in which a radiation-curable monomer component and an oligomer component are blended into a general pressure-sensitive adhesive such as the aforementioned acrylic adhesive and rubber-based adhesive can be exemplified. Radiation hardening adhesive.
作為所摻合的放射線硬化性的單體成分,可舉例如:氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇 二(甲基)丙烯酸酯等。另外,放射線硬化性的低聚物成分可舉出氨基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物,其分子量在100~30000左右的範圍內是適當的。放射線硬化性的單體成分與低聚物成分的摻合量,可以根據所述黏著劑層的種類來適當確定可使黏著劑層的黏著力下降的量。一般而言,相對於構成黏著劑的丙烯酸系聚合物等基礎聚合物100重量份,例如為5~500重量份、40~150重量份左右為佳。 Examples of the radiation-hardening monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, and Hydroxymethylmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylic acid Esters, 1,4-butanediol Di (meth) acrylate and the like. Examples of the radiation-hardenable oligomer component include urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers, and the molecular weight is about 100 to 30,000. The range is appropriate. The blending amount of the radiation-curable monomer component and the oligomer component can be appropriately determined according to the type of the adhesive layer, so as to reduce the adhesive force of the adhesive layer. Generally, it is preferably about 5 to 500 parts by weight and about 40 to 150 parts by weight based on 100 parts by weight of a base polymer such as an acrylic polymer constituting the adhesive.
另外,作為放射線硬化型黏著劑,除前述說明過的添加型的放射線硬化型黏著劑以外,還可舉出:使用在聚合物側鏈或者主鏈中或主鏈末端具有碳-碳雙鍵的聚合物作為基礎聚合物的內在型的放射線硬化型黏著劑。就內在型的放射線硬化型黏著劑而言,其不需要含有或者不大量含有作為低分子成分的低聚物成分等,因此低聚物成分等不會經時地在黏著劑中移動,從而可以形成穩定的層結構的黏著劑層,因此為佳。 In addition, as the radiation-curable adhesive, in addition to the additive-type radiation-curable adhesive described above, there may be mentioned those having a carbon-carbon double bond in a polymer side chain or a main chain or at the end of the main chain. The polymer is an inherent type of radiation-curable adhesive as a base polymer. The intrinsic radiation-hardening adhesive does not need to contain or contain a large amount of oligomer components and the like as low-molecular components, so the oligomer components and the like do not move in the adhesive over time. It is preferable to form an adhesive layer having a stable layer structure.
前述具有碳-碳雙鍵的基礎聚合物可以沒有特別限制地使用具有碳-碳雙鍵,且具有黏著性的基礎聚合物。作為這樣的基礎聚合物,以丙烯酸系聚合物作為基本骨架的聚合物為佳。作為丙烯酸系聚合物的基本骨架,可舉出前述例示的丙烯酸系聚合物。 As the aforementioned base polymer having a carbon-carbon double bond, a base polymer having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymer exemplified above.
在前述丙烯酸系聚合物中導入碳-碳雙鍵的方法沒有特別限制,可以採用各種方法,但在聚合物側鏈上導入碳-碳雙鍵在分子設計方面比較容易。例如可舉出下 述方法:預先使具有官能基的單體與丙烯酸系聚合物共聚後,使具有可與該官能基反應的官能基及碳-碳雙鍵的化合物,在保持碳-碳雙鍵的放射線硬化性的狀態下進行縮合或加成反應。 The method of introducing a carbon-carbon double bond into the aforementioned acrylic polymer is not particularly limited, and various methods can be adopted, but introducing a carbon-carbon double bond into a polymer side chain is relatively easy in terms of molecular design. For example, Said method: after a monomer having a functional group is copolymerized with an acrylic polymer in advance, a compound having a functional group and a carbon-carbon double bond capable of reacting with the functional group is kept to maintain the radiation hardening property of the carbon-carbon double bond Condensation or addition reaction.
作為這些官能基的組合例,可以列舉:羧基與環氧基、羧基與氮丙啶基、羥基與異氰酸酯基等。這些官能基的組合中,從容易追蹤反應的觀點出發,羥基與異氰酸酯基的組合為佳。另外,只要是經由這些官能基的組合而生成前述具有碳-碳雙鍵的丙烯酸系聚合物的組合,則官能基可以在丙烯酸系聚合物與前述化合物中的任意一側,就前述佳的組合而言,丙烯酸系聚合物具有羥基、前述化合物具有異氰酸酯基的情形為佳。此時,作為具有碳-碳雙鍵的異氰酸酯化合物,可舉出例如甲基丙烯醯異氰酸酯、2-甲基丙烯醯氧乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。另外,作為丙烯酸系聚合物,可使用將前述例示的含羥基單體、2-羥基乙基乙烯基醚、4-羥基丁基乙烯基醚、二乙二醇單乙烯基醚的醚系化合物等共聚而得到的丙烯酸系聚合物。 Examples of combinations of these functional groups include a carboxyl group and an epoxy group, a carboxyl group and an aziridinyl group, a hydroxyl group and an isocyanate group, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferred from the viewpoint of easy tracking of the reaction. In addition, as long as the acrylic polymer having a carbon-carbon double bond is generated through a combination of these functional groups, the functional group may be on either side of the acrylic polymer and the compound. It is preferable that an acrylic polymer has a hydroxyl group, and the said compound has an isocyanate group. At this time, examples of the isocyanate compound having a carbon-carbon double bond include methacrylic acid isocyanate, 2-methacrylic acid oxyethyl isocyanate, and m-isopropenyl-α, α-dimethylbenzyl isocyanate Wait. In addition, as the acrylic polymer, an ether-based compound such as the above-mentioned hydroxyl-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like can be used. An acrylic polymer obtained by copolymerization.
前述內在型的放射線硬化型黏著劑,可以單獨使用前述具有碳-碳雙鍵的基礎聚合物(特別是丙烯酸系聚合物),也可以在不損害特性的程度下摻合前述放射線硬化性的單體成分與低聚物成分。放射線硬化性的低聚物成分等一般相對於基礎聚合物100重量份在30重量份的範圍內,0~10重量份的範圍為佳。 The intrinsic radiation-hardening type adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or the radiation-curable monomer may be blended without impairing the characteristics. Body composition and oligomer composition. The radiation-curable oligomer component and the like are generally in a range of 30 parts by weight, and preferably in a range of 0 to 10 parts by weight based on 100 parts by weight of the base polymer.
前述放射線硬化型黏著劑中,在經由紫外線等而硬化的情況下含有光聚合引發劑。作為光聚合引發劑,可舉例:4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α’-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物;甲氧基苯乙酮、2,2’-二甲氧基-2-苯基苯乙酮、2,2’-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉代丙烷-1-酮等苯乙酮系化合物;苯偶姻***、苯偶姻異丙醚、茴香偶姻甲醚等苯偶姻醚系化合物;苯偶醯二甲基縮酮等縮酮系化合物;2-萘磺醯氯等芳香族磺醯氯系化合物;1-苯酮-1,1-丙二酮-2-(鄰乙氧基羰基)肟等光活性肟系化合物;二苯甲酮、苯甲醯基苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物;噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等噻噸酮系化合物;樟腦醌;鹵代酮;醯基氧化膦;醯基膦酸酯等。相對於構成黏著劑的丙烯酸系聚合物等基礎聚合物100重量份,光聚合引發劑的摻合量例如為0.05重量份~20重量份左右。 The said radiation hardening type adhesive contains a photoinitiator when it hardens | cures by ultraviolet rays etc. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, 2 Α-keto alcohol compounds such as methyl-2-hydroxyphenylacetone, 1-hydroxycyclohexylphenyl ketone; methoxyacetophenone, 2,2'-dimethoxy-2-phenylacetophenone Acetophenone compounds such as 2,2'-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropane-1-one; Benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisole methyl ether; ketal compounds such as benzoin dimethyl ketal; aromatic sulfonium such as 2-naphthalenesulfonyl chloride Chlorine-based compounds; 1-benzophenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime and other photoactive oxime-based compounds; benzophenone, benzamylbenzoic acid, 3,3 ' -Benzophenone compounds such as dimethyl-4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone Ketones, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, and other thioxanthone-based compounds; camphorquinone Halogenated ketone halogenated phosphine oxide hafnium Phosphonate. The blending amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the adhesive.
另外,作為放射線硬化型黏著劑,可舉例日本特開昭60-196956號公報中公開的橡膠系黏著劑與丙烯酸系黏著劑等,所述橡膠系黏著劑、丙烯酸系黏著劑等包含:具有2個以上不飽和鍵的加聚性化合物、具有環氧基的烷氧基矽烷等光聚合性化合物、與羰基化合物、有機硫 化合物、過氧化物、胺、鎓鹽系化合物等光聚合引發劑。 Examples of the radiation-curable adhesive include rubber-based adhesives and acrylic adhesives disclosed in Japanese Patent Laid-Open No. 60-196956. The rubber-based adhesives and acrylic adhesives include: 2 Additives with more than one unsaturated bond, photopolymerizable compounds such as alkoxysilanes with epoxy groups, carbonyl compounds, and organic sulfur Photopolymerization initiators such as compounds, peroxides, amines, and onium salt compounds.
前述放射線硬化型的黏著劑層12中,也可以根據需要含有經由放射線照射而著色的化合物。經由在黏著劑層12中包含經由放射線照射而著色的化合物,可以僅使被放射線照射後的部分著色。經由放射線照射而着色的化合物為在射線照射其前無色或淺色,但經由放射線照射而變為有色的化合物,可舉例舉例隱色染料等。經由放射線照射而著色的化合物的使用比例可以適當設定。 The radiation-curable adhesive layer 12 may contain a compound colored by radiation irradiation as necessary. By including the compound colored by radiation irradiation in the adhesive layer 12, only the portion irradiated with the radiation can be colored. The compound that is colored by radiation irradiation is a compound that is colorless or light-colored before being irradiated with radiation, but becomes a compound that is colored by radiation irradiation. Examples include leuco dyes. The use ratio of the compound colored by radiation irradiation can be appropriately set.
黏著劑層12的厚度沒有特別限制,但從兼具防止晶片切割面的缺損與晶粒接合薄膜3的固定保持等方面考慮,1μm~50μm左右為佳。較佳為2μm~30μm、更佳為5μm~25μm。 The thickness of the adhesive layer 12 is not particularly limited, but it is preferably about 1 μm to 50 μm in terms of both prevention of defects on the diced surface of the wafer and fixing and holding of the die-bonding film 3. It is preferably 2 μm to 30 μm, and more preferably 5 μm to 25 μm.
切割晶粒接合薄膜10的晶粒接合薄膜3一般由隔片保護。 The die-bonding film 3 from which the die-bonding film 10 is cut is generally protected by a spacer.
切割晶粒接合薄膜10可以以一般的方法製造。例如,可以通過將切割膠帶1的黏著劑層12與晶粒接合薄膜3貼合,來製造切割晶粒接合薄膜10。 The dicing die-bonding film 10 can be manufactured by a general method. For example, the dicing die-bonding film 10 can be manufactured by bonding the adhesive layer 12 of the dicing tape 1 and the die-bonding film 3.
(層合薄膜2) (Laminated film 2)
如圖3~4所示,層合薄膜2具備:隔片9、配置在隔片9上的多個切割晶粒接合薄膜10。切割晶粒接合薄膜10在隔片9上設置一定間隔地配置多個。 As shown in FIGS. 3 to 4, the laminated film 2 includes a spacer 9 and a plurality of dicing die-bonding films 10 arranged on the spacer 9. A plurality of dicing die-bonding films 10 are provided on the spacer 9 at a constant interval.
隔片9在供給實際應用之前作為保護晶片接合薄膜3的保護材料發揮作用。隔片9在向晶粒接合薄膜 3上貼合半導體晶片時被剝離。作為隔片9,可使用聚對苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、與由含氟剝離劑、長鏈烷基丙烯酸酯類剝離劑等剝離劑進行了表面塗敷的塑膠薄膜與紙等。 The spacer 9 functions as a protective material for protecting the wafer bonding film 3 before being supplied to an actual application. Separator 9 is bonded to the die 3 is peeled off when a semiconductor wafer is bonded. The separator 9 can be surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, and a release agent such as a fluorine-containing release agent or a long-chain alkyl acrylate-based release agent. Plastic film and paper.
對半導體裝置的製造方法進行說明。 A method of manufacturing a semiconductor device will be described.
如圖5所示,將切割晶粒接合薄膜10壓接於半導體晶圓4。作為半導體晶圓4,可舉例:矽晶圓、碳化矽晶圓、化合物半導體晶片等。作為化合物半導體晶圓,可舉出氮化鎵晶圓等。 As shown in FIG. 5, the dicing die-bonding film 10 is pressure-bonded to the semiconductor wafer 4. Examples of the semiconductor wafer 4 include a silicon wafer, a silicon carbide wafer, and a compound semiconductor wafer. Examples of the compound semiconductor wafer include a gallium nitride wafer.
作為壓接方法,可舉例,藉由壓接輥等擠壓單元進行擠壓的方法等。 Examples of the pressure bonding method include a method of pressing by a pressing unit such as a pressure bonding roller.
壓接溫度(黏貼溫度)35℃以上為佳,更較佳為37℃以上。壓接溫度的上限低,50℃以下為佳,較佳為45℃以下。經由以低溫進行壓接,可防止對半導體晶圓4的熱影響,可抑制半導體晶圓4的翹曲。 The crimping temperature (adhesion temperature) is preferably 35 ° C or higher, and more preferably 37 ° C or higher. The upper limit of the crimping temperature is low, preferably 50 ° C or lower, and more preferably 45 ° C or lower. By performing pressure bonding at a low temperature, thermal influence on the semiconductor wafer 4 can be prevented, and warpage of the semiconductor wafer 4 can be suppressed.
另外,壓力為1×105Pa~1×107Pa為佳,較佳為2×105Pa~8×106Pa。 The pressure is preferably 1 × 10 5 Pa to 1 × 10 7 Pa, and more preferably 2 × 10 5 Pa to 8 × 10 6 Pa.
然後,如圖6所示,進行半導體晶圓4的切割。即,將半導體晶圓4切割為規定的尺寸而將其單片化,切出半導體晶片5。切割利用常法進行。另外,該步驟中,例如可以採用切入到切割晶粒接合薄膜10的稱為全切的切割方式。另外,作為該步驟中使用的切割裝置, 沒有特別限定,可以使用以往公知的裝置。另外,半導體晶圓4經由切割晶粒接合薄膜10進行接著固定,因此可以抑制晶片缺損與晶片飛散,且也可以抑制半導體晶圓4的破損。 Then, as shown in FIG. 6, dicing of the semiconductor wafer 4 is performed. That is, the semiconductor wafer 4 is cut into a predetermined size and singulated, and the semiconductor wafer 5 is cut out. Cutting is performed by a conventional method. In this step, for example, a cutting method called full cutting, which is cut into the dicing die-bonding film 10, can be used. In addition, as the cutting device used in this step, It does not specifically limit, A conventionally well-known apparatus can be used. In addition, since the semiconductor wafer 4 is adhered and fixed through the dicing die-bonding film 10, wafer defects and wafer scattering can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.
為了將接著固定於切割晶粒接合薄膜10的半導體晶片5剝離,進行半導體晶片5的拾取。作為拾取的方法,沒有特別限制,可以使用以往公知的各種方法。例如可舉出:用針從切割-晶粒接合薄膜10側將各個半導體晶片5向上推,藉由拾取裝置拾取被上推的半導體晶片5的方法等。 In order to peel off the semiconductor wafer 5 which is subsequently fixed to the dicing die bonding film 10, the semiconductor wafer 5 is picked up. There is no restriction | limiting in particular as a picking method, Various conventionally well-known methods can be used. For example, a method of pushing each semiconductor wafer 5 upward from the dicing-die bonding film 10 side with a needle, and picking up the pushed semiconductor wafer 5 by a pick-up device, and the like can be cited.
在此,在黏著劑層12為紫外線硬化型的情況下,在對該黏著劑層12照射紫外線後進行拾取。由此,黏著劑層12對晶粒接合薄膜3的黏著力下降,半導體晶片5的剝離變得容易。結果,可在不損傷半導體晶片5的情況下進行拾取。照射紫外線時的照射強度、照射時間等條件沒有特別限定,可以根據需要適當設定。 Here, when the adhesive layer 12 is an ultraviolet curing type, the adhesive layer 12 is picked up after being irradiated with ultraviolet rays. Accordingly, the adhesive force of the adhesive layer 12 to the die-bonding film 3 is reduced, and the semiconductor wafer 5 is easily peeled. As a result, pickup can be performed without damaging the semiconductor wafer 5. Conditions such as irradiation intensity and irradiation time when irradiating ultraviolet rays are not particularly limited, and can be appropriately set as necessary.
如圖7所示,拾取的半導體晶片5透過晶粒接合薄膜3接著固定於被黏物6,得到附有半導體晶片的被黏物61。附有半導體晶片的被黏物61具備:被黏物6、配置在被黏物6上的晶粒接合薄膜3、及配置在晶粒接合薄膜3上的半導體晶片5。 As shown in FIG. 7, the picked-up semiconductor wafer 5 passes through the die-bonding film 3 and is then fixed to the adherend 6 to obtain an adherend 61 with the semiconductor wafer attached thereto. The adherend 61 to which the semiconductor wafer is attached includes an adherend 6, a die-bonding film 3 arranged on the adherend 6, and a semiconductor wafer 5 arranged on the die-bonding film 3.
晶片貼裝溫度為80℃以上為佳,較佳為90℃以上。另外,晶片貼裝溫度為150℃以下為佳,較佳為130℃以下。經由設定為150℃以下,可以防止翹曲的發 生。 The wafer mounting temperature is preferably 80 ° C or higher, and more preferably 90 ° C or higher. The wafer mounting temperature is preferably 150 ° C or lower, and more preferably 130 ° C or lower. By setting the temperature to 150 ° C or lower, warping can be prevented. Raw.
然後,在加壓條件下對附有半導體晶片之被黏物61進行加熱,由此使晶粒接合薄膜3熱硬化,使半導體晶片5與被黏物6固著。經由在加壓條件下使晶粒接合薄膜3熱硬化,可消除在晶粒接合薄膜3與被黏物6之間存在的空隙,可確保晶粒接合薄膜3與被黏物6接觸的面積。 Then, the adherend 61 to which the semiconductor wafer is attached is heated under a pressurized condition, so that the die-bonding film 3 is thermally hardened, and the semiconductor wafer 5 and the adherend 6 are fixed. By thermally hardening the die-bonding film 3 under pressure, a gap existing between the die-bonding film 3 and the adherend 6 can be eliminated, and an area where the die-bonding film 3 and the adherend 6 are in contact can be ensured.
作為在加壓條件下進行加熱的方法,可舉例以下方法等:對在填充有不活潑氣體的腔室內配置的帶有半導體晶片的被黏物61進行加熱。 Examples of the method of heating under pressure include heating the adherend 61 with a semiconductor wafer disposed in a chamber filled with an inert gas.
加壓氣氛的壓力為0.5kg/cm2(4.9×10-2MPa)以上為佳,較佳為1kg/cm2(9.8×10-2MPa)以上,更佳為5kg/cm2(4.9×10-1MPa)以上。若為0.5kg/cm2以上,則可容易地消除在晶粒接合薄膜3與被黏物6之間存在的空隙。加壓氣氛的壓力為20kg/cm2(1.96MPa)以下為佳,較佳為18kg/cm2(1.77MPa)以下,更佳為15kg/cm2(1.47MPa)以下。若為20kg/cm2以下,則可抑制過度加壓所致的晶粒接合薄膜3的露出。 The pressure of the pressurized atmosphere is preferably 0.5 kg / cm 2 (4.9 × 10 -2 MPa) or more, more preferably 1 kg / cm 2 (9.8 × 10 -2 MPa) or more, and even more preferably 5 kg / cm 2 (4.9 × 10 -1 MPa) or more. If it is 0.5 kg / cm 2 or more, the gap existing between the die-bonding film 3 and the adherend 6 can be easily eliminated. A pressurized atmosphere of a pressure of 20kg / cm 2 (1.96MPa) or less preferably, preferably 18kg / cm 2 (1.77MPa) or less, more preferably 15kg / cm 2 (1.47MPa) or less. If it is 20 kg / cm 2 or less, it is possible to suppress the exposure of the grain-bonding film 3 due to excessive pressure.
在加壓條件下進行加熱時的加熱溫度,80℃以上為佳,較佳為100℃以上,更佳為120℃以上,特別佳為170℃以上。若為80℃以上,則可使晶粒接合薄膜3達到適度的硬度,經由加壓硬化,可有效地消除空隙。加熱溫度為260℃以下為佳,較佳為200℃以下,更佳為180℃以下。若為260℃以下,可防止硬化前的晶粒接合 薄膜3的分解。 The heating temperature when heating under pressure is preferably 80 ° C or higher, preferably 100 ° C or higher, more preferably 120 ° C or higher, and particularly preferably 170 ° C or higher. When the temperature is 80 ° C. or higher, the die-bonding film 3 can have an appropriate hardness, and the void can be effectively eliminated through hardening under pressure. The heating temperature is preferably 260 ° C or lower, more preferably 200 ° C or lower, and even more preferably 180 ° C or lower. If it is 260 ° C or lower, it is possible to prevent grain bonding before hardening Decomposition of the film 3.
加熱時間為0.1小時以上為佳,較佳為0.2小時以上,更佳為0.5小時以上。若為0.1小時以上,則可充分地得到加壓的效果。加熱時間為24小時以下為佳,較佳為3小時以下,更佳為1小時以下。 The heating time is preferably 0.1 hours or more, more preferably 0.2 hours or more, and even more preferably 0.5 hours or more. If it is 0.1 hour or more, the effect of pressurization can fully be acquired. The heating time is preferably 24 hours or less, more preferably 3 hours or less, and even more preferably 1 hour or less.
如圖8所示,進行藉由焊線7將被黏物6的端子部(內部引線)的前端與半導體晶片5上的電極焊盤電連接的絲焊步驟。作為焊線7,可使用例如金線、鋁線或銅線等。進行絲焊時的溫度,80℃以上為佳,較佳為120℃以上,該溫度250℃以下為佳,更佳175℃以下。另外,其加熱時間至少進行數秒~數分鐘(例如為1秒~1分鐘)。在以達到前述溫度範圍內的方式進行加熱的狀態下,經由併用基於超音波影像的振動能量與基於施加加壓的壓接能量,來進行接線。 As shown in FIG. 8, a wire bonding step of electrically connecting the tip of the terminal portion (internal lead) of the adherend 6 to the electrode pad on the semiconductor wafer 5 by the bonding wire 7 is performed. As the bonding wire 7, for example, a gold wire, an aluminum wire, or a copper wire can be used. The temperature during wire bonding is preferably 80 ° C or higher, more preferably 120 ° C or higher, and the temperature is preferably 250 ° C or lower, and more preferably 175 ° C or lower. The heating time is at least several seconds to several minutes (for example, 1 second to 1 minute). In a state where heating is performed within the aforementioned temperature range, wiring is performed by using a combination of vibration energy based on ultrasonic images and crimping energy based on application of pressure.
接著,進行藉由密封樹脂8將半導體晶片5密封的密封步驟。該步驟是為了保護搭載於被黏物6的半導體晶片5與焊線7而進行的。該步驟經由以模具將密封用樹脂成形來進行。作為密封樹脂8,例如使用環氧系樹脂。樹脂密封時的加熱溫度為165℃以上為佳,較佳為170℃以上,該加熱溫度為185℃以下為佳,較佳為180℃以下。 Next, a sealing step of sealing the semiconductor wafer 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor wafer 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature during resin sealing is preferably 165 ° C or higher, more preferably 170 ° C or higher, and the heating temperature is preferably 185 ° C or lower, and more preferably 180 ° C or lower.
可以根據需要對密封物進一步進行加熱(後硬化步驟)。由此,可以將密封步驟中硬化不充分的密封樹脂8完全硬化。加熱溫度可以適當設定。 The seal may be further heated as necessary (post-curing step). Thereby, the sealing resin 8 which is not sufficiently hardened in the sealing step can be completely cured. The heating temperature can be appropriately set.
如上所述,經由包含透過晶粒接合薄膜3將半導體晶片5固定於被黏物6的步驟、與在將半導體晶片5固定於被黏物6的步驟之後使晶粒接合薄膜3硬化的步驟的方法,可適合地製造出半導體裝置。 As described above, the steps including the step of fixing the semiconductor wafer 5 to the adherend 6 through the die bonding film 3 and the step of hardening the die bonding film 3 after the step of fixing the semiconductor wafer 5 to the adherend 6 are included. The method can suitably manufacture a semiconductor device.
(變形例1) (Modification 1)
如圖9所示,變形例1中,晶粒接合薄膜3具備:用於黏貼半導體晶圓4的黏貼部31及配置於黏貼部31的周邊的非黏貼部32。在非黏貼部32設置有標記301。由於在非黏貼部32設置有標記301,因此在將晶粒接合薄膜3與切割膠帶1貼合時,可以容易地進行對位。另外,可容易地判斷晶粒接合薄膜3的有無。另外,在進行品質檢查時,可檢測到晶粒接合薄膜3的形狀的異常。 As shown in FIG. 9, in the first modification, the die-bonding film 3 includes an adhesive portion 31 for attaching the semiconductor wafer 4 and a non-adhesive portion 32 arranged around the adhesive portion 31. The non-adhesive portion 32 is provided with a mark 301. Since the mark 301 is provided in the non-adhesive part 32, when the die-bonding film 3 and the dicing tape 1 are bonded, alignment can be performed easily. In addition, the presence or absence of the die-bonding film 3 can be easily determined. When the quality inspection is performed, an abnormality in the shape of the die-bonding film 3 can be detected.
標記301可以光學地進行認識。例如,標記301中,波長為400nm~600nm的全部區域下的光線的透射率為0%~20%為佳,較佳為0%~10%。若為20%以下,則可利用感測器容易地進行位置認識。 The mark 301 can be recognized optically. For example, in the mark 301, the transmittance of light in the entire region with a wavelength of 400 nm to 600 nm is preferably 0% to 20%, and more preferably 0% to 10%. If it is 20% or less, position recognition can be easily performed using a sensor.
在非黏貼部32設置標記301的方法沒有特別限制,例如有如下的方法等:藉由噴墨設置標記301的方法、在塗敷晶粒接合薄膜3時一邊形成圖案一邊塗敷從而設置標記301的方法、經由黏貼膜或膠帶來設置標記301的方法。 The method of setting the mark 301 on the non-adhesive portion 32 is not particularly limited. For example, there are methods such as the method of setting the mark 301 by inkjet, and applying the pattern while coating the die-bonding film 3 to form the mark 301 The method of setting the mark 301 via an adhesive film or an adhesive tape.
(變形例2) (Modification 2)
如圖10所示,變形例2中,隔片9具備:與晶粒接合薄膜3接觸的層合部91、配置在層合部91的外周的外周部92、及配置在外周部92的周邊的周邊部93。層合部91與晶粒接合薄膜3接觸。另一方面,外周部92及周邊部93不與晶粒接合薄膜3接觸。 As shown in FIG. 10, in the second modification, the separator 9 includes a laminated portion 91 that is in contact with the die-bonding film 3, an outer peripheral portion 92 disposed on the outer periphery of the laminated portion 91, and a periphery disposed on the outer peripheral portion 92.的 边 部 93。 The peripheral portion 93. The laminated portion 91 is in contact with the die-bonding film 3. On the other hand, the outer peripheral portion 92 and the peripheral portion 93 are not in contact with the die-bonding film 3.
在整個外周部92設置有切口901。由於在外周部92設置有切口901,因此在將晶粒接合薄膜3與切割膠帶1貼合時,可以容易地進行對位。 A cutout 901 is provided in the entire outer peripheral portion 92. Since the cutout 901 is provided in the outer peripheral portion 92, it is possible to easily perform alignment when the die-bonding film 3 is bonded to the dicing tape 1.
出於可容易地進行位置認識的理由,切口901的深度為5μm~45μm為佳。 For reasons of easy position recognition, the depth of the cutout 901 is preferably 5 μm to 45 μm.
(變形例3) (Modification 3)
如圖11所示,變形例3中,在外周部92的一部分設置有切口901。 As shown in FIG. 11, in the third modification, a cutout 901 is provided in a part of the outer peripheral portion 92.
(變形例4) (Modification 4)
如圖12所示,變形例4中,在整個層合部91的邊緣設置有切口901。由於在層合部91的邊緣設置有切口901,因此在將晶粒接合薄膜3與切割膠帶1貼合時,可以容易地進行對位。又,也可以在層合部91的邊緣的一部分設置切口901。 As shown in FIG. 12, in the fourth modification, a cutout 901 is provided on the entire edge of the laminated portion 91. Since the notch 901 is provided at the edge of the laminated portion 91, when the die-bonding film 3 is bonded to the dicing tape 1, alignment can be easily performed. A cutout 901 may be provided in a part of the edge of the laminated portion 91.
(其他) (other)
上述各變形例可以適當地進行組合。 The above-mentioned modifications can be appropriately combined.
以下,使用實施例詳細地說明本發明,但本發明只要不超出其要旨,則並不限定於以下的實施例。 Hereinafter, the present invention will be described in detail using examples. However, the present invention is not limited to the following examples as long as the gist is not exceeded.
對實施例中使用的成分進行說明。 The components used in the examples will be described.
丙烯酸類橡膠:長瀨化成(股份有限公司)製之TEISANRESINSG-P3(包含環氧基的丙烯酸酯共聚物、Mw:85萬,玻璃轉化溫度:12℃) Acrylic rubber: TEISANRESINSG-P3 manufactured by Nagase Kasei Co., Ltd. (epoxy-containing acrylate copolymer, Mw: 850,000, glass transition temperature: 12 ° C)
二氧化矽填料1:Admatechs公司製之YA050C(二氧化矽,平均粒徑:50nm) Silicon dioxide filler 1: YA050C (silicon dioxide, average particle size: 50nm) manufactured by Admatechs
二氧化矽填料2:Admatechs公司製之SO-E1(二氧化矽,平均粒徑:250nm) Silicon dioxide filler 2: SO-E1 (silicon dioxide, average particle size: 250nm) manufactured by Admatechs
二氧化矽填料3:Admatechs公司製之SO-E2(二氧化矽,平均粒徑:500nm) Silicon dioxide filler 3: SO-E2 (silicon dioxide, average particle size: 500nm) manufactured by Admatechs
按照表1之摻合比,將丙烯酸類橡膠及二氧化矽填料溶解於甲乙酮(MEK),使它們進行分散,得到適於塗敷的黏度的膠接著劑組合物溶液。之後,在經由聚矽氧烷脫模處理後的厚度50μm的聚對苯二甲酸乙二醇酯膜(以下亦稱為脫模處理膜)上塗佈接著劑組合物溶液後,在130℃下乾燥2分鐘,得到晶粒接合薄膜(厚度25μm)。 According to the blending ratio in Table 1, acrylic rubber and silica filler were dissolved in methyl ethyl ketone (MEK), and they were dispersed to obtain an adhesive adhesive composition solution having a viscosity suitable for coating. After that, a 50 μm-thick polyethylene terephthalate film (hereinafter also referred to as a release film) after being subjected to a polysiloxane release treatment was coated with an adhesive composition solution, and then the temperature was 130 ° C. It dried for 2 minutes, and obtained the crystal grain bonding film (thickness 25 micrometers).
在25℃下將晶粒接合薄膜黏貼到切割膠帶(日東電工(股份有限公司)製的P2130G)的黏著劑層 上,製作切割晶粒接合薄膜。 The die-bonding film was adhered to an adhesive layer of a dicing tape (P2130G, manufactured by Nitto Denko Corporation) at 25 ° C. Then, a dicing die-bonding film was produced.
使用切割-晶粒接合薄膜進行以下的評價。結果如表1所示。 The following evaluation was performed using a dicing-die bonding film. The results are shown in Table 1.
(霧度) (Haze)
自切割晶粒接合薄膜除去切割膠帶,得到晶粒接合薄膜。 The dicing tape was removed from the dicing die-bonding film to obtain a die-bonding film.
將晶粒接合薄膜設置於濁度計(日本電色工業製的NDH2000)的試樣室,使用光源D65測定霧度。 The die-bonding film was set in a sample chamber of a haze meter (NDH2000 manufactured by Nippon Denshoku Industries), and the haze was measured using a light source D65.
(晶粒接合薄膜的透光率) (Light transmittance of the die-bonding film)
自切割晶粒接合薄膜除去切割膠帶,得到晶粒接合薄膜。 The dicing tape was removed from the dicing die-bonding film to obtain a die-bonding film.
將晶粒接合薄膜固定於膜夾持器(FLH-741,島津股份有限公司製作所製),使用紫外可見近紅外分光光度計(日本分光公司製的V-670DS),在測定速度2000nm/min、點徑2mm(直徑)、測定範圍350~800nm的條件下測定平行透射率。 The die-bonding film was fixed to a film holder (FLH-741, manufactured by Shimadzu Corporation), and an ultraviolet-visible near-infrared spectrophotometer (V-670DS manufactured by JASCO Corporation) was used at a measurement speed of 2000 nm / min, Parallel transmittance was measured under conditions of a spot diameter of 2 mm (diameter) and a measurement range of 350 to 800 nm.
(200%拉伸後的晶粒接合薄膜的透光率) (Transmittance of 200% stretched die-bonding film)
自切割晶粒接合薄膜除去切割膠帶,得到晶粒接合薄膜。 The dicing tape was removed from the dicing die-bonding film to obtain a die-bonding film.
自晶粒接合薄膜切出縱2cm×橫4cm×厚度25μm的試驗用膜。在試驗用膜上,以設置1cm間隔的方式黏貼2個聚醯亞胺膠帶。由此,得到試驗用膜及在試驗用膜上具備2個設置1cm的間隔而配置的聚醯亞胺膠帶的試驗片。拉伸試驗片的試驗用膜直至聚醯亞胺膠帶的間隔達到2cm。用膠帶將拉伸後的狀態的試驗片固定於直徑2mm的測定掩模。然後,將試驗片設置於膜夾持器(FLH-741,島津股份有限公司製作所製),並使用紫外可見近紅外分光光度計(日本分光公司製,V-670DS),在測定速度2000nm/min、點徑2mm(直徑)、測定範圍350~800nm的條件下測定試驗用膜的拉伸後的部分的平行透射率。 A test film having a length of 2 cm × 4 cm × 25 μm in thickness was cut out from the die-bonding film. Two polyimide tapes were affixed to the test film with a 1-cm interval. In this way, a test film and a test piece including two polyimide tapes arranged on the test film with a 1 cm gap therebetween were obtained. The test film of the test piece was stretched until the interval between the polyimide tape reached 2 cm. The test piece in a stretched state was fixed to a measurement mask having a diameter of 2 mm with an adhesive tape. Then, the test piece was set in a film holder (FLH-741, manufactured by Shimadzu Corporation), and an ultraviolet-visible near-infrared spectrophotometer (V-670DS, manufactured by JASCO Corporation) was used at a measurement speed of 2000 nm / min. The parallel transmittance of the stretched portion of the test film was measured under conditions of a spot diameter of 2 mm (diameter) and a measurement range of 350 to 800 nm.
(切割膠帶的透光率) (Transmittance of cutting tape)
自切割-晶粒接合薄膜除去晶粒接合薄膜,得到切割膠帶。 The die-bonding film was removed from the dicing-die-bonding film to obtain a dicing tape.
將切割膠帶固定於膜夾持器(FLH-741,島津股份有限公司製作所製),使用紫外可見近紅外分光光度計(日本分光公司製,V-670DS),在測定速度2000nm/min、點徑2mm(直徑)、測定範圍350~800nm的條件下測定平行透射率。又,向切割膠帶的基材的第2主面照射光。 The dicing tape was fixed to a film holder (FLH-741, manufactured by Shimadzu Corporation), and an ultraviolet-visible near-infrared spectrophotometer (manufactured by JASCO Corporation, V-670DS) was used. The parallel transmittance was measured under the conditions of 2 mm (diameter) and a measurement range of 350 to 800 nm. Moreover, light was irradiated to the 2nd main surface of the base material of a dicing tape.
(表面粗糙度Ra) (Surface roughness Ra)
對切割膠帶的基材的第2主面測定表面粗糙度Ra。 The surface roughness Ra was measured about the 2nd main surface of the base material of a dicing tape.
基於JIS B 0601,使用Veeco公司製的非接觸三維粗 糙度測定裝置(NT3300)來測定表面粗糙度。測定條件設為50倍,對測定資料施以中值濾波器(Median filter)來求出測定值。變更測定部位進行5次測定,將其平均值作為表面粗糙度。 Based on JIS B 0601, a non-contact 3D rough Roughness measuring device (NT3300) to measure surface roughness. The measurement conditions were set to 50 times, and the measurement data was measured by applying a median filter to the measurement data. The measurement site was changed five times, and the average value was used as the surface roughness.
(處理性) (Handling)
在60℃下以0.1MPa的壓力將厚度經由研磨而調整為50μm後的矽晶圓貼合於切割晶粒接合薄膜。使用切割裝置(DFD6361,DISCO公司製)將矽晶圓及晶粒接合薄膜切割為5mm×5mm的尺寸,得到晶片接合用晶片。晶片接合用晶片具備晶片及配置在晶片上的晶片接合劑。使用晶片接合裝置(SPA-300,新川公司製),使用具備面積5mm×5mm之底面、且於底面之中央設置有直徑1mm的吸附孔的橡膠固夾,在120℃、0.1秒、0.1kg之條件下,將晶片接合用晶片接合到平的引線框上。由此,得到附有晶片的引線框。使用超音波影像裝置(Hitachi Power Solutions公司製之Hybrid SAT),對附有晶片之引線框確認空隙之有無。選擇觀察到1mm以上的空隙的附有晶片的引線框,從晶片的側面用光學顯微鏡(基恩士公司製的VHX-2000)確認是否可觀察到空隙。可確認到空隙的情況判定為○,無法確認到空隙的情況判定為×。 The silicon wafer whose thickness was adjusted to 50 μm by polishing at 60 ° C. and a pressure of 0.1 MPa was bonded to a dicing die-bonding film. The dicing apparatus (DFD6361, manufactured by DISCO Corporation) was used to cut the silicon wafer and the die-bonding film into a size of 5 mm × 5 mm to obtain a wafer for wafer bonding. The wafer for wafer bonding includes a wafer and a wafer bonding agent disposed on the wafer. A wafer bonding device (SPA-300, manufactured by Shinkawa Corporation) was used. A rubber clamp having a bottom surface with an area of 5 mm × 5 mm and an adsorption hole having a diameter of 1 mm was provided at the center of the bottom surface. Under conditions, the wafer for wafer bonding is bonded to a flat lead frame. Thereby, a lead frame with a wafer is obtained. Using an ultrasonic imaging device (Hybrid SAT manufactured by Hitachi Power Solutions), the presence or absence of voids was confirmed on the lead frame with the wafer attached. A lead frame with a wafer where a gap of 1 mm or more was observed was selected, and an optical microscope (VHX-2000 manufactured by Keyence Corporation) was used to confirm whether a gap was observed from the side of the wafer. A case where voids can be confirmed is determined as ○, and a case where voids cannot be confirmed is determined as ×.
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JP2014074040A JP6374199B2 (en) | 2014-03-31 | 2014-03-31 | Die bond film, dicing die bond film and laminated film |
JP2014-074040 | 2014-03-31 |
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KR (1) | KR102349546B1 (en) |
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KR102060981B1 (en) * | 2015-10-21 | 2019-12-31 | 후루카와 덴키 고교 가부시키가이샤 | Surface protective adhesive tape for backside grinding of semiconductor wafers and grinding method of semiconductor wafers |
WO2017090440A1 (en) * | 2015-11-24 | 2017-06-01 | リンテック株式会社 | Circuit member-connecting resin sheet |
JP6422462B2 (en) * | 2016-03-31 | 2018-11-14 | 古河電気工業株式会社 | Electronic device packaging tape |
JP6670177B2 (en) * | 2016-05-30 | 2020-03-18 | 日東電工株式会社 | Die bond film, dicing die bond film, and method of manufacturing semiconductor device |
JP6877982B2 (en) * | 2016-12-08 | 2021-05-26 | 日東電工株式会社 | Adhesive film, dicing / die bond film, semiconductor device manufacturing method and semiconductor device |
JP7030414B2 (en) * | 2017-02-14 | 2022-03-07 | 株式会社Screenホールディングス | Board processing method and its equipment |
CN111466015B (en) * | 2018-03-23 | 2023-08-29 | 琳得科株式会社 | Die bonding film, dicing die bonding sheet, and method for manufacturing semiconductor chip |
WO2020137934A1 (en) * | 2018-12-28 | 2020-07-02 | リンテック株式会社 | Film-like adhesive agent, layered sheet, composite sheet, and method for producing layered body |
CN113165347B (en) * | 2018-12-28 | 2023-07-25 | 琳得科株式会社 | Film-like adhesive, laminate, composite sheet, and method for producing laminate |
CN111128807B (en) * | 2019-12-27 | 2023-06-23 | 青岛歌尔微电子研究院有限公司 | Incomplete wafer processing method, device, equipment and medium |
CN117511426B (en) * | 2024-01-05 | 2024-04-12 | 深圳市长松科技有限公司 | Film for packaging and blocking water vapor, semiconductor film packaging method and structure |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007150206A (en) * | 2005-11-30 | 2007-06-14 | Furukawa Electric Co Ltd:The | Dicing tape |
JP2007288170A (en) * | 2006-03-20 | 2007-11-01 | Hitachi Chem Co Ltd | Die-bond dicing sheet |
JP2010245191A (en) * | 2009-04-02 | 2010-10-28 | Hitachi Chem Co Ltd | Film-like adhesive |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3288146B2 (en) | 1992-09-16 | 2002-06-04 | 日立化成工業株式会社 | Conductive adhesive film, bonding method, support member with conductive adhesive film, and semiconductor device |
JP5087910B2 (en) * | 2005-12-13 | 2012-12-05 | 東レ株式会社 | Adhesive composition for electronic device, adhesive sheet for electronic device, and electronic component using the same |
JP5274859B2 (en) * | 2007-04-18 | 2013-08-28 | 信越化学工業株式会社 | Manufacturing method of bonded substrate |
CN101669194A (en) * | 2007-04-19 | 2010-03-10 | 积水化学工业株式会社 | Dicing/die bonding tape and method for manufacturing semiconductor chip |
WO2009123261A1 (en) * | 2008-04-01 | 2009-10-08 | 信越化学工業株式会社 | Method for producing soi substrate |
JP2010265416A (en) * | 2009-05-15 | 2010-11-25 | Hitachi Chem Co Ltd | Film adhesive |
JP5023225B1 (en) * | 2011-03-10 | 2012-09-12 | 日東電工株式会社 | Method for manufacturing film for semiconductor device |
JP2013001862A (en) * | 2011-06-20 | 2013-01-07 | Hitachi Chemical Co Ltd | Adhesive sheet, method for manufacturing semiconductor device, and semiconductor device |
US9296925B2 (en) * | 2012-08-02 | 2016-03-29 | Lintec Corporation | Film-like adhesive, adhesive sheet for semiconductor junction, and method for producing semiconductor device |
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- 2015-03-09 KR KR1020150032566A patent/KR102349546B1/en active IP Right Grant
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007150206A (en) * | 2005-11-30 | 2007-06-14 | Furukawa Electric Co Ltd:The | Dicing tape |
JP2007288170A (en) * | 2006-03-20 | 2007-11-01 | Hitachi Chem Co Ltd | Die-bond dicing sheet |
JP2010245191A (en) * | 2009-04-02 | 2010-10-28 | Hitachi Chem Co Ltd | Film-like adhesive |
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TW201542756A (en) | 2015-11-16 |
CN104946147B (en) | 2020-08-11 |
CN104946147A (en) | 2015-09-30 |
JP2015198120A (en) | 2015-11-09 |
KR102349546B1 (en) | 2022-01-10 |
KR20150113829A (en) | 2015-10-08 |
JP6374199B2 (en) | 2018-08-15 |
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