TWI627252B - Film-like adhesive, dicing tape-integrated film-like adhesive, and method of manufacturing semiconductor device - Google Patents
Film-like adhesive, dicing tape-integrated film-like adhesive, and method of manufacturing semiconductor device Download PDFInfo
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- TWI627252B TWI627252B TW103113483A TW103113483A TWI627252B TW I627252 B TWI627252 B TW I627252B TW 103113483 A TW103113483 A TW 103113483A TW 103113483 A TW103113483 A TW 103113483A TW I627252 B TWI627252 B TW I627252B
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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Abstract
本發明係一種半導體裝置用膜狀接著劑,其含有熱硬化性樹脂、硬化劑及導電性粒子,且熱硬化後之玻璃轉移溫度為130℃以上。 The present invention relates to a film-like adhesive for a semiconductor device comprising a thermosetting resin, a curing agent, and conductive particles, and the glass transition temperature after heat curing is 130 ° C or higher.
Description
本發明係關於一種膜狀接著劑、切晶帶一體型膜狀接著劑、及半導體裝置之製造方法。 The present invention relates to a film-like adhesive, a dicing tape-integrated film-like adhesive, and a method of producing a semiconductor device.
半導體裝置之製造中將半導體元件接著於金屬導線架等之方法(所謂之黏晶法)始於先前之金-矽共晶,並向利用焊料、樹脂糊劑之方法發展。目前採用使用導電性之樹脂糊劑之方法。 In the manufacture of a semiconductor device, a method in which a semiconductor element is followed by a metal lead frame or the like (so-called die bonding method) is started from the previous gold-germanium eutectic, and is developed by a method using solder or a resin paste. A method of using a conductive resin paste is currently employed.
然而,使用樹脂糊劑之方法存在以下問題:因空隙使導電性下降,或樹脂糊劑之厚度不均勻,或因樹脂糊劑之露出而使焊墊受到污染。為了解決該等問題,有使用膜狀之接著劑代替樹脂糊劑之情形(例如,參照專利文獻1)。 However, the method of using a resin paste has a problem that the conductivity is lowered due to the void, or the thickness of the resin paste is not uniform, or the solder pad is contaminated by the exposure of the resin paste. In order to solve such problems, there is a case where a film-like adhesive is used instead of the resin paste (for example, refer to Patent Document 1).
又,於專利文獻2中揭示一種膜狀之接著劑,其調配玻璃轉移溫度為-10~50℃之丙烯酸共聚物而賦予可撓性,以降低半導體元件或導線架等之熱損傷。 Further, Patent Document 2 discloses a film-like adhesive which is provided with an acrylic copolymer having a glass transition temperature of -10 to 50 ° C to impart flexibility to reduce thermal damage such as a semiconductor element or a lead frame.
專利文獻1:日本專利特開平6-145639號公報 Patent Document 1: Japanese Patent Laid-Open No. Hei 6-145639
專利文獻2:日本專利第4137827號公報 Patent Document 2: Japanese Patent No. 4137827
另外,自先前以來,迫切期望一種具有耐熱性之接著劑。尤其是進行電力之控制或供給之功率半導體裝置一般發熱量較多,因此對該功率半導體裝置所使用之接著劑要求較高之耐熱性。 Further, since the past, an adhesive having heat resistance has been eagerly desired. In particular, a power semiconductor device that performs control or supply of electric power generally generates a large amount of heat, and therefore requires a high heat resistance for the adhesive used in the power semiconductor device.
本發明者等人努力研究半導體裝置用之膜狀接著劑。結果發現:若硬化後之玻璃轉移溫度(Tg)高於特定溫度,則耐熱性優異,從而完成本發明。 The inventors of the present invention have diligently studied a film-like adhesive for a semiconductor device. As a result, it has been found that if the glass transition temperature (Tg) after hardening is higher than a specific temperature, heat resistance is excellent, and the present invention has been completed.
即,本發明之半導體裝置用之膜狀接著劑之特徵在於:含有熱硬化性樹脂、硬化劑及導電性粒子,且熱硬化後之玻璃轉移溫度為130℃以上。 In other words, the film-like adhesive for a semiconductor device of the present invention contains a thermosetting resin, a curing agent, and conductive particles, and has a glass transition temperature after heat curing of 130 ° C or higher.
根據上述構成,由於熱硬化後之玻璃轉移溫度為130℃以上,因而具有耐熱性。因此,若將上述膜狀接著劑用於半導體裝置,則可耐受自半導體元件等發出之熱。又,由於上述膜狀接著劑含有導電性粒子,因此可高效率地向外部釋出自半導體元件等發出之熱。 According to the above configuration, since the glass transition temperature after the heat curing is 130 ° C or higher, heat resistance is obtained. Therefore, when the film-like adhesive is used for a semiconductor device, it is possible to withstand heat generated from a semiconductor element or the like. Further, since the film-like adhesive contains conductive particles, heat emitted from the semiconductor element or the like can be efficiently released to the outside.
關於上述構成,較佳為硬化後之25℃下之電阻率為1×10-2Ω‧m以下。電阻率越低,電氣電導度越高,電氣電導度與熱電導度成比例,因此若硬化後之25℃下之電阻率為1×10-2Ω‧m以下,則熱電導度相對較高。其結果,可高效率地向外部釋放來自半導體元件等之熱。尤其在用於小型且經高密度安裝之半導體元件之情形時,可較佳地向外部釋放熱。 In the above configuration, it is preferable that the specific resistance at 25 ° C after curing is 1 × 10 -2 Ω ‧ m or less. The lower the resistivity, the higher the electrical conductivity, and the electrical conductivity is proportional to the thermal conductivity. Therefore, if the resistivity at 25 ° C after hardening is 1 × 10 -2 Ω ‧ m or less, the thermal conductivity is relatively high. . As a result, heat from a semiconductor element or the like can be efficiently released to the outside. Especially in the case of a small-sized and high-density mounted semiconductor element, heat can be preferably released to the outside.
關於上述構成,較佳為含有熱塑性樹脂,且於將上述熱塑性樹脂之重量設為A,將上述熱硬化性樹脂與上述硬化劑之合計重量設為B時,重量比率(A)/(B)在1/9~4/6之範圍內。若上述重量比率(A)/(B)為4/6以下,則硬化成分充分而變得容易提高熱硬化後之玻璃轉移溫度。另一方面,若上述重量比率(A)/(B)為1/9以上,則膜化變得容易。 In the above configuration, it is preferable to contain a thermoplastic resin, and when the weight of the thermoplastic resin is A and the total weight of the thermosetting resin and the curing agent is B, the weight ratio (A)/(B) In the range of 1/9~4/6. When the weight ratio (A)/(B) is 4/6 or less, the hardening component is sufficient and the glass transition temperature after heat curing is easily increased. On the other hand, when the weight ratio (A)/(B) is 1/9 or more, film formation becomes easy.
關於上述構成,較佳為上述導電性粒子之含量相對於膜狀接著劑整體,為30~95重量%。若上述導電性粒子之含量相對於膜狀接著劑整體,為30重量%以上,則容易提高熱電導度。其結果,可更高效率地向外部釋放來自半導體元件等之熱。另一方面,若上述導電性粒子之含量相對於膜狀接著劑整體,為95重量%以下,則膜化變得容易。 In the above configuration, the content of the conductive particles is preferably from 30 to 95% by weight based on the total amount of the film-like adhesive. When the content of the conductive particles is 30% by weight or more based on the entire film-like adhesive, the thermal conductivity is easily improved. As a result, heat from a semiconductor element or the like can be released to the outside more efficiently. On the other hand, when the content of the conductive particles is 95% by weight or less based on the entire film-like adhesive, film formation becomes easy.
關於上述構成,較佳為熱硬化後之175℃下之拉伸儲存彈性模數為50~1500MPa。若熱硬化後之175℃下之儲存彈性模數為50MPa以上,則可使半導體元件等牢固地接著於被接著體。另一方面,若熱硬化後之175℃下之儲存彈性模數為1500MPa,則具有某種程度之柔軟性,因此可耐受熱應力,而可抑制與被接著體剝離。 In the above configuration, it is preferred that the tensile storage elastic modulus at 175 ° C after heat curing is 50 to 1500 MPa. When the storage elastic modulus at 175 ° C after thermal curing is 50 MPa or more, the semiconductor element or the like can be firmly adhered to the adherend. On the other hand, if the storage elastic modulus at 175 ° C after heat curing is 1,500 MPa, it has a certain degree of flexibility, so that it can withstand thermal stress and can suppress peeling from the adherend.
關於上述構成,較佳為於150℃下以0.5MPa保持0.5秒後150℃下之與銅之剪切接著力在5~200g/25mm2之範圍內。由於上述剪切接著力為5g/25mm2以上,因此於使半導體元件接著於導線架時,可於150℃以下使上述膜狀接著劑充分地軟化。其結果,可謀求導線架等被接著體之抗氧化及對被接著體之高密接。 In the above configuration, it is preferable to maintain the shearing force with copper at 150 ° C in the range of 5 to 200 g / 25 mm 2 after holding at 0.5 MPa for 0.5 second at 150 °C. Since the shearing force is 5 g/25 mm 2 or more, when the semiconductor element is attached to the lead frame, the film-like adhesive can be sufficiently softened at 150 ° C or lower. As a result, it is possible to achieve oxidation resistance of the adherend such as a lead frame and high adhesion to the adherend.
關於上述構成,較佳為厚度在5~100μm之範圍內。若厚度為5μm以上,則即便產生晶片之翹曲等,亦可防止產生未接著之部位。另一方面,若厚度為100μm以下,則可抑制因黏晶時之負荷使膜狀接著劑過度地露出而污染焊墊等。 Regarding the above configuration, the thickness is preferably in the range of 5 to 100 μm. When the thickness is 5 μm or more, even if warpage of the wafer or the like occurs, it is possible to prevent occurrence of a portion that does not follow. On the other hand, when the thickness is 100 μm or less, it is possible to suppress excessive exposure of the film-like adhesive due to the load at the time of die bonding, and contamination of the pad or the like.
又,為了解決上述問題,本發明之切晶帶一體型膜狀接著劑之特徵在於包含:於基材上積層黏著劑層而成之切晶帶、及上述所記載之膜狀接著劑,且上述膜狀接著劑形成於上述黏著劑層上。 Moreover, in order to solve the above problem, the dicing tape-integrated film-like adhesive of the present invention is characterized by comprising a dicing tape in which an adhesive layer is laminated on a substrate, and the film-like adhesive described above, and The film-like adhesive is formed on the above adhesive layer.
關於上述構成,較佳為上述膜狀接著劑與上述切晶帶之剝離力於剝離速度:300mm/min、剝離溫度:25℃、T型剝離之條件下在 0.01~3.00N/20mm之範圍內。若上述剝離力為0.01N/20mm以上,則可抑制切晶時之晶片飛散。又,若上述剝離力為3.00N/20mm以下,則可使拾取變得容易。 In the above configuration, it is preferable that the peeling force of the film-like adhesive agent and the dicing tape is at a peeling speed of 300 mm/min, a peeling temperature of 25 ° C, and a T-type peeling. Within the range of 0.01~3.00N/20mm. When the peeling force is 0.01 N/20 mm or more, scattering of the wafer at the time of crystal cutting can be suppressed. Moreover, when the peeling force is 3.00 N/20 mm or less, picking up can be facilitated.
又,本發明之半導體裝置之製造方法之特徵在於,其係使用上述所記載之切晶帶一體型膜狀接著劑的半導體裝置之製造方法,且包括:步驟A,將半導體晶圓貼附於上述切晶帶一體型膜狀接著劑之上述膜狀接著劑,步驟B,將上述半導體晶圓連同上述膜狀接著劑一起進行切割,步驟C,拾取藉由切晶而獲得之附膜狀接著劑之半導體元件,步驟D,使上述附膜狀接著劑之半導體元件與被接著體接觸後,將上述膜狀接著劑於50~150℃之範圍內且於0.05~40MPa之範圍內保持0.01~2秒,及步驟E,於上述步驟D後使上述膜狀接著劑熱硬化。 Moreover, the method of manufacturing a semiconductor device according to the present invention is characterized in that the method of manufacturing a semiconductor device using the diced tape-integrated film-like adhesive described above includes: Step A: attaching a semiconductor wafer to In the above-mentioned film-like adhesive of the dicing tape-integrated film-like adhesive, in step B, the semiconductor wafer is cut together with the film-like adhesive, and in step C, the film obtained by dicing is picked up and then attached. In the semiconductor device of the agent, in step D, after the semiconductor element with the film-like adhesive is brought into contact with the adherend, the film-like adhesive is kept in the range of 50 to 150 ° C and maintained in the range of 0.05 to 40 MPa. After 2 seconds and step E, the film-like adhesive is thermally cured after the above step D.
根據上述構成,使經拾取之附膜狀接著劑之半導體元件與被接著體接觸後,將上述膜狀接著劑於50~150℃之範圍內且於0.05~40MPa之範圍內保持0.01~2秒(步驟D)。因此,於使半導體元件接著於導線架等被接著體時,可使膜狀接著劑於50~150℃之範圍內之溫度下充分地軟化而進行密接。由於在150℃以下之相對較低之溫度下使膜狀接著劑軟化,因此可防止被接著體(例如,導線架)之氧化。並且,其後,使上述膜狀接著劑熱硬化(步驟E)。藉此,可製成能耐受發熱之半導體裝置。又,由於上述膜狀接著劑含有導電性粒子,因此可高效率地向外部釋出自半導體元件等發出之熱。 According to the above configuration, after the semiconductor element to be attached with the film-attached adhesive is brought into contact with the adherend, the film-like adhesive is maintained in the range of 50 to 150 ° C and maintained in the range of 0.05 to 40 MPa for 0.01 to 2 seconds. (Step D). Therefore, when the semiconductor element is subsequently attached to a lead frame or the like, the film-like adhesive can be sufficiently softened at a temperature in the range of 50 to 150 ° C to be adhered. Since the film-like adhesive is softened at a relatively low temperature of 150 ° C or lower, oxidation of the adherend (for example, lead frame) can be prevented. Then, the film-like adhesive is thermally cured (step E). Thereby, a semiconductor device capable of withstanding heat can be produced. Further, since the film-like adhesive contains conductive particles, heat emitted from the semiconductor element or the like can be efficiently released to the outside.
根據本發明之膜狀接著劑及切晶帶一體型膜狀接著劑,若用於半導體裝置,則可耐受自半導體元件等發出之熱,且可高效率地向外 部釋出自半導體元件等發出之熱。 According to the film-like adhesive and the dicing tape-integrated film-like adhesive of the present invention, when used in a semiconductor device, it can withstand heat generated from a semiconductor element or the like, and can be efficiently outward. The part emits heat from semiconductor components and the like.
又,根據本發明之半導體裝置之製造方法,可防止被接著體之氧化,且可製成能耐受發熱之半導體裝置。又,可高效率地向外部釋出自半導體元件等發出之熱。 Moreover, according to the method of manufacturing a semiconductor device of the present invention, oxidation of the adherend can be prevented, and a semiconductor device capable of withstanding heat can be produced. Further, heat emitted from the semiconductor element or the like can be efficiently released to the outside.
1‧‧‧基材 1‧‧‧Substrate
2‧‧‧黏著劑層 2‧‧‧Adhesive layer
2a‧‧‧黏著劑層之與工件貼附部分對應之部分 2a‧‧‧Parts of the adhesive layer corresponding to the attached part of the workpiece
2b‧‧‧其他部分 2b‧‧‧Other parts
3、3'‧‧‧膜狀接著劑 3, 3'‧‧‧ film adhesive
3a‧‧‧膜狀接著劑之半導體晶圓貼附部分 3a‧‧‧Semiconductor wafer attachment part of film adhesive
4‧‧‧半導體晶圓 4‧‧‧Semiconductor wafer
5‧‧‧半導體晶片 5‧‧‧Semiconductor wafer
6‧‧‧被接著體 6‧‧‧Exposed body
7‧‧‧接合線 7‧‧‧bonding line
8‧‧‧密封樹脂 8‧‧‧ Sealing resin
10、12‧‧‧切晶帶一體型膜狀接著劑 10,12‧‧‧Cutting Tape Integrated Film Adhesive
11‧‧‧切晶帶 11‧‧‧Cutting Tape
圖1係本發明之一實施形態之切晶帶一體型膜狀接著劑的剖面模式圖。 Fig. 1 is a schematic cross-sectional view showing a diced tape-integrated film-like adhesive according to an embodiment of the present invention.
圖2係本發明之另一實施形態之切晶帶一體型膜狀接著劑的剖面模式圖。 Fig. 2 is a schematic cross-sectional view showing a diced tape-integrated film-like adhesive according to another embodiment of the present invention.
圖3係用以說明本發明之半導體裝置之一製造方法的圖。 Fig. 3 is a view for explaining a method of manufacturing a semiconductor device of the present invention.
以下,對本發明之切晶帶一體型膜狀接著劑進行說明。圖1係本發明之一實施形態之切晶帶一體型膜狀接著劑之剖面模式圖。圖2係本發明之另一實施形態之切晶帶一體型膜狀接著劑之剖面模式圖。 Hereinafter, the diced tape-integrated film-like adhesive of the present invention will be described. Fig. 1 is a schematic cross-sectional view showing a dicing tape-integrated film-like adhesive according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view showing a dicing tape-integrated film-like adhesive according to another embodiment of the present invention.
如圖1所示,切晶帶一體型膜狀接著劑10具有於切晶帶11上積層膜狀接著劑3而成之構成。切晶帶11係於基材1上積層黏著劑層2而構成,膜狀接著劑3設於該黏著劑層2上。又,本發明亦可為如圖2所示之切晶帶一體型膜狀接著劑12般僅於工件(半導體晶圓等)貼附部分形成有膜狀接著劑3'之構成。 As shown in FIG. 1, the dicing tape-integrated film-like adhesive 10 has a structure in which a film-like adhesive 3 is laminated on the dicing tape 11. The dicing tape 11 is formed by laminating an adhesive layer 2 on a substrate 1, and a film-like adhesive 3 is provided on the adhesive layer 2. Further, the present invention may be configured such that a film-like adhesive 3' is formed only on a workpiece (semiconductor wafer or the like) attached to the dicing tape-integrated film-like adhesive 12 as shown in FIG.
膜狀接著劑3含有熱硬化性樹脂、硬化劑及導電性粒子,且熱硬化後之玻璃轉移溫度為130℃以上。上述熱硬化後之玻璃轉移溫度較佳為140℃以上。又,上述熱硬化後之玻璃轉移溫度越高越佳,例如為300℃以下。膜狀接著劑3由於熱硬化後之玻璃轉移溫度為130℃以上,因此具有耐熱性。因此,若用於半導體裝置,則可耐受自半導體元件等發出之熱。又,由於上述膜狀接著劑含有導電性粒子,因此可 高效率地向外部釋出自半導體元件等發出之熱。上述玻璃轉移溫度可藉由調整熱塑性樹脂與熱硬化性樹脂之調配比,或調整環氧樹脂等熱硬化性樹脂之反應性官能基之價數而控制。 The film-like adhesive 3 contains a thermosetting resin, a curing agent, and conductive particles, and has a glass transition temperature after heat curing of 130 ° C or higher. The glass transition temperature after the above thermal curing is preferably 140 ° C or higher. Further, the glass transition temperature after the above heat curing is preferably as high as possible, for example, 300 ° C or lower. Since the film-like adhesive 3 has a glass transition temperature of 130 ° C or more after heat curing, it has heat resistance. Therefore, if it is used for a semiconductor device, it can withstand heat generated from a semiconductor element or the like. Further, since the film-like adhesive contains conductive particles, it is The heat emitted from the semiconductor element or the like is released to the outside efficiently. The glass transition temperature can be controlled by adjusting the blending ratio of the thermoplastic resin and the thermosetting resin, or adjusting the valence of the reactive functional group of the thermosetting resin such as an epoxy resin.
再者,於本說明書中,所謂熱硬化後之玻璃轉移溫度,係指於140℃下加熱1小時,進而於260℃下加熱5小時後之玻璃轉移溫度。 In the present specification, the glass transition temperature after thermosetting refers to a glass transition temperature after heating at 140 ° C for 1 hour and further heating at 260 ° C for 5 hours.
又,膜狀接著劑3較佳為熱硬化後之25℃下之電阻率為1×10-2Ω‧m以下。電阻率越低電氣電導度越高,電氣電導度與熱電導度成比例,因此若熱硬化後之25℃下之電阻率為1×10-2Ω‧m以下,則熱電導度相對較高。其結果,可高效率地向外部釋放來自半導體元件等之熱。尤其在用於小型且經高密度安裝之半導體元件之情形時,可較佳地向外部釋放熱。 Further, the film-like adhesive 3 preferably has a specific resistance of 1 × 10 -2 Ω ‧ m or less at 25 ° C after heat curing. The lower the electrical resistivity, the higher the electrical conductivity, and the electrical conductivity is proportional to the thermal conductivity. Therefore, if the electrical resistivity at 25 ° C after thermal hardening is 1 × 10 -2 Ω ‧ m or less, the thermal conductivity is relatively high. . As a result, heat from a semiconductor element or the like can be efficiently released to the outside. Especially in the case of a small-sized and high-density mounted semiconductor element, heat can be preferably released to the outside.
再者,於本說明書中,所謂熱硬化後之25℃下之電阻率,係指於140℃下加熱1小時,進而於260℃下加熱5小時後之電阻率。 In the present specification, the electrical resistivity at 25 ° C after thermosetting refers to the electrical resistivity after heating at 140 ° C for 1 hour and further heating at 260 ° C for 5 hours.
又,膜狀接著劑3較佳為熱硬化後之175℃下之儲存彈性模數為50~1500MPa,更佳為75~1200MPa。若熱硬化後之175℃下之儲存彈性模數為50MPa以上,則可使半導體元件等牢固地接著於被接著體。另一方面,若熱硬化後之175℃下之儲存彈性模數為1500MPa,則具有某種程度之柔軟性,因此可耐受熱應力,而可抑制與被接著體剝離。 Further, the film-like adhesive 3 preferably has a storage elastic modulus at 175 ° C after heat curing of 50 to 1,500 MPa, more preferably 75 to 1200 MPa. When the storage elastic modulus at 175 ° C after thermal curing is 50 MPa or more, the semiconductor element or the like can be firmly adhered to the adherend. On the other hand, if the storage elastic modulus at 175 ° C after heat curing is 1,500 MPa, it has a certain degree of flexibility, so that it can withstand thermal stress and can suppress peeling from the adherend.
再者,於本說明書中,所謂熱硬化後之175℃下之儲存彈性模數,係指於140℃下加熱1小時,進而於260℃下加熱5小時後之175℃下之儲存彈性模數。 In the present specification, the storage elastic modulus at 175 ° C after thermosetting refers to the storage elastic modulus at 175 ° C after heating at 140 ° C for 1 hour and further heating at 260 ° C for 5 hours. .
膜狀接著劑3之25℃下之儲存彈性模數較佳為5MPa以上,更佳為2×102MPa以上。若上述儲存彈性模數未達5MPa,則存在與切晶帶之密接力變高而使拾取性下降之傾向。膜狀接著劑3之25℃下之儲存彈性模數較佳為5×103MPa以下,更佳為3×103MPa以下,進而較佳 為2.5×103MPa以下。超過5×103MPa之情形於調配上較難。 The storage elastic modulus at 25 ° C of the film-like adhesive 3 is preferably 5 MPa or more, more preferably 2 × 10 2 MPa or more. When the storage elastic modulus is less than 5 MPa, the adhesion to the dicing tape tends to be high, and the pick-up property tends to be lowered. The storage elastic modulus at 25 ° C of the film-like adhesive 3 is preferably 5 × 10 3 MPa or less, more preferably 3 × 10 3 MPa or less, still more preferably 2.5 × 10 3 MPa or less. More than 5 × 10 3 MPa is difficult to mix.
膜狀接著劑3之表面粗糙度(Ra)較佳為0.1~1000nm。藉由使上述表面粗糙度為1000nm以下,可提高低溫貼附性。又,可提高晶粒黏著時之對被接著體之貼附性。再者,使上述表面粗糙度為0.1nm以上一般難以實現。 The surface roughness (Ra) of the film-like adhesive 3 is preferably from 0.1 to 1,000 nm. By setting the surface roughness to 1000 nm or less, the low-temperature adhesion can be improved. Further, the adhesion to the adherend when the die is adhered can be improved. Further, it is generally difficult to achieve the above surface roughness of 0.1 nm or more.
膜狀接著劑3之熱硬化後之測定溫度25℃下之導熱率越高越佳,例如為0.5W/m‧K以上。若上述導熱率為0.5W/m‧K以上,則散熱性較佳,可應對小型‧高密度安裝。 The measurement temperature after the thermal curing of the film-like adhesive 3 is preferably as high as possible at 25 ° C, for example, 0.5 W/m‧K or more. When the above thermal conductivity is 0.5 W/m‧K or more, heat dissipation is preferable, and it is possible to cope with small-sized and high-density mounting.
再者,於本說明書中,所謂熱硬化後之測定溫度25℃下之導熱率,係指於140℃下加熱1小時,進而於260℃下加熱5小時後之25℃下之導熱率。 In the present specification, the thermal conductivity at a measurement temperature of 25 ° C after thermosetting refers to a thermal conductivity at 25 ° C after heating at 140 ° C for 1 hour and further heating at 260 ° C for 5 hours.
膜狀接著劑3較佳為於70℃下貼附於包含背面金屬膜之晶圓後,於25℃下測定密接力時,該密接力為0.2N/10mm以上。藉由使上述密接力為0.2N/10mm以上,可抑制切晶時之晶片飛散。再者,所謂背面金屬膜,係指晶圓之背面之蒸鍍有金屬之膜或鍍敷有金屬之膜。上述背面金屬膜通常表面自由能小於矽晶圓,因此膜狀接著劑3不容易貼附。即,藉由使上述密接力為0.2N/10mm以上,即便於使用包含膜狀接著劑3不容易貼附之背面金屬膜之晶圓的半導體裝置之製造中,亦可抑制切晶時之晶片飛散,從而可謀求良率之提高。上述密接力係於剝離角度180度、剝離溫度25℃、剝離速度300mm/min之條件下進行測定而獲得之值。 The film-like adhesive 3 is preferably attached to a wafer including a back metal film at 70 ° C, and when the adhesion is measured at 25 ° C, the adhesion is 0.2 N/10 mm or more. By making the above-mentioned adhesion force to 0.2 N/10 mm or more, scattering of the wafer at the time of crystal cutting can be suppressed. In addition, the back metal film refers to a film in which a metal is deposited on the back surface of the wafer or a film on which a metal is plated. The back metal film generally has a surface free energy smaller than that of the germanium wafer, and thus the film-like adhesive 3 is not easily attached. In other words, by making the adhesion force to 0.2 N/10 mm or more, even in the production of a semiconductor device using a wafer including a back surface metal film which is not easily attached by the film-like adhesive 3, wafers at the time of dicing can be suppressed. Flying, so that you can improve the yield. The adhesion was measured by a measurement at a peeling angle of 180 degrees, a peeling temperature of 25 ° C, and a peeling speed of 300 mm/min.
膜狀接著劑3較佳為於150℃下以0.5MPa保持0.5秒後150℃下之與銅之剪切接著力在5~200g/25mm2之範圍內。由於上述剪切接著力為5g/25mm2以上,因此於使半導體元件接著於導線架時,可於150℃以下使上述膜狀接著劑充分地軟化。其結果,可謀求導線架等被接著體之抗氧化及對被接著體之高密接。上述剪切接著力之測定方 法係根據實施例中記載之方法。 The film-like adhesive 3 is preferably held at 0.5 MPa for 0.5 second at 150 ° C, and the shearing force with copper at 150 ° C is in the range of 5 to 200 g / 25 mm 2 . Since the shearing force is 5 g/25 mm 2 or more, when the semiconductor element is attached to the lead frame, the film-like adhesive can be sufficiently softened at 150 ° C or lower. As a result, it is possible to achieve oxidation resistance of the adherend such as a lead frame and high adhesion to the adherend. The method for measuring the shearing force is based on the method described in the examples.
膜狀接著劑3較佳為含有熱塑性樹脂。作為熱塑性樹脂,可列舉:天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET(Polyethylene Terephthalate,聚對苯二甲酸乙二酯)或PBT(Polybutylene Terephthalate,聚對苯二甲酸丁二酯)等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或氟樹脂等。該等熱塑性樹脂之中,尤佳為離子性雜質較少、耐熱性較高、可確保半導體元件之可靠性之丙烯酸系樹脂。 The film-like adhesive 3 preferably contains a thermoplastic resin. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutylene. Polyene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET (Polyethylene Terephthalate, polyethylene terephthalate) A saturated polyester resin such as a diester) or a PBT (Polybutylene Terephthalate), a polyamidoximine resin, or a fluororesin. Among these thermoplastic resins, an acrylic resin having less ionic impurities, high heat resistance, and reliability of a semiconductor element is particularly preferable.
作為丙烯酸系樹脂,並無特別限定,可列舉以具有碳數30以下、尤其是碳數4~18之直鏈或支鏈之烷基的丙烯酸或甲基丙烯酸之酯中之一種或兩種以上作為成分之聚合物(丙烯酸系共聚物)等。作為上述烷基,例如可列舉:甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或十二烷基等。 The acrylic resin is not particularly limited, and one or more of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having a carbon number of 30 or less, particularly a carbon number of 4 to 18, may be mentioned. A polymer (acrylic copolymer) or the like as a component. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, and a cyclohexyl group. 2-ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, ten Octaalkyl, or dodecyl, and the like.
又,作為形成聚合物(丙烯酸系共聚物)之其他單體,並無特別限定,例如可列舉:丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、亞甲基丁二酸、順丁烯二酸、反丁烯二酸或丁烯酸等含有羧基之單體;順丁烯二酸酐或亞甲基丁二酸酐等酸酐單體;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)甲酯等含有羥基之單體;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或 (甲基)丙烯醯氧基萘磺酸等含有磺酸基之單體;或丙烯醯磷酸2-羥基乙酯等含有磷酸基之單體。 Further, the other monomer forming the polymer (acrylic copolymer) is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxy amyl acrylate, methylene succinic acid, and cis. a monomer having a carboxyl group such as butenedioic acid, fumaric acid or crotonic acid; an acid anhydride monomer such as maleic anhydride or methylene succinic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl methacrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, (meth) acrylate 10 - a hydroxyl group-containing monomer such as hydroxydecyl ester, 12-hydroxylauryl (meth)acrylate or (4-hydroxymethylcyclohexyl)methyl acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl Acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide, propanesulfonic acid, sulfopropyl (meth)acrylate or A monomer containing a sulfonic acid group such as (meth)acryloxynaphthalenesulfonic acid or a phosphate group-containing monomer such as 2-hydroxyethyl acrylate or 2-hydroxyethyl phosphate.
丙烯酸系樹脂之中,較佳為重量平均分子量為10萬以上者,更佳為30萬~300萬者,進而較佳為50萬~200萬者。其原因在於,若重量平均分子量在上述數值範圍內,則接著性及耐熱性優異。再者,重量平均分子量係利用GPC(Gel Permeation Chromatography,凝膠滲透層析法)測定,藉由聚苯乙烯換算而算出之值。 Among the acrylic resins, the weight average molecular weight is preferably 100,000 or more, more preferably 300,000 to 3,000,000, and still more preferably 500,000 to 2,000,000. The reason for this is that when the weight average molecular weight is within the above numerical range, the adhesion and heat resistance are excellent. In addition, the weight average molecular weight is measured by GPC (Gel Permeation Chromatography), and is calculated by polystyrene conversion.
熱塑性樹脂之玻璃轉移溫度較佳為-40℃以上,更佳為-35℃以上,進而較佳為-25℃以上。藉由使熱塑性樹脂之玻璃轉移溫度為-40℃以上,可使拾取變得容易。又,熱塑性樹脂之玻璃轉移溫度較佳為-10℃以下,更佳為-11℃以下。藉由使熱塑性樹脂之玻璃轉移溫度為-10℃以下,變得容易於40℃左右之低溫下將膜狀接著劑3貼附於半導體晶圓。於本說明書中,熱塑性樹脂之玻璃轉移溫度係指利用Fox式求出之理論值。 The glass transition temperature of the thermoplastic resin is preferably -40 ° C or higher, more preferably -35 ° C or higher, and still more preferably -25 ° C or higher. By making the glass transition temperature of the thermoplastic resin to -40 ° C or higher, pickup can be facilitated. Further, the glass transition temperature of the thermoplastic resin is preferably -10 ° C or lower, more preferably -11 ° C or lower. By setting the glass transition temperature of the thermoplastic resin to -10 ° C or lower, it is easy to attach the film-like adhesive 3 to the semiconductor wafer at a low temperature of about 40 ° C. In the present specification, the glass transition temperature of the thermoplastic resin means a theoretical value obtained by the Fox equation.
如上所述,膜狀接著劑3含有熱硬化性樹脂。 As described above, the film-like adhesive 3 contains a thermosetting resin.
作為上述熱硬化性樹脂,可列舉:酚樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、或熱硬化性聚醯亞胺樹脂等。尤佳為腐蝕半導體元件之離子性雜質等之含量較少之環氧樹脂。又,作為環氧樹脂之硬化劑,較佳為酚樹脂。 Examples of the thermosetting resin include a phenol resin, an amine resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a polyoxyxylene resin, or a thermosetting polyimide resin. . It is particularly preferable to etch an epoxy resin having a small content of ionic impurities such as semiconductor elements. Further, as the curing agent for the epoxy resin, a phenol resin is preferred.
作為上述環氧樹脂,並無特別限定,例如可使用雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型等二官能環氧樹脂或多官能環氧樹脂、或乙內醯脲型、異氰尿酸三縮水甘油酯型或縮水甘油胺型等環氧樹脂。該等環氧樹脂之中,尤佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型樹脂或四酚基乙烷型環氧樹脂。其原因在於,該等環氧樹脂 富於與作為硬化劑之酚樹脂之反應性,且耐熱性等優異。 The epoxy resin is not particularly limited, and for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type can be used. , naphthalene type, anthraquinone type, phenol novolak type, o-cresol novolak type, trihydroxyphenylmethane type, tetraphenol ethane type, etc., difunctional epoxy resin or polyfunctional epoxy resin, or beta-urea urea Epoxy resin such as triglycidyl isocyanurate or glycidylamine. Among these epoxy resins, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type resin or a tetraphenol ethane type epoxy resin is particularly preferable. The reason is that the epoxy resins It is rich in reactivity with a phenol resin as a curing agent, and is excellent in heat resistance and the like.
上述酚樹脂係作為環氧樹脂之硬化劑而起作用者,例如可列舉:苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬酚酚醛清漆樹脂等酚醛清漆型酚樹脂、可溶酚醛樹脂型酚樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。該等酚樹脂之中,尤佳為苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於可提高半導體裝置之連接可靠性。 The phenol resin functions as a curing agent for an epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a nonylphenol novolac resin. A phenol novolak type phenol resin such as a resin, a resol resin type phenol resin, or a polyhydroxy styrene such as polyparaxyl styrene. Among these phenol resins, a phenol novolak resin and a phenol aralkyl resin are particularly preferable. The reason for this is that the connection reliability of the semiconductor device can be improved.
關於環氧樹脂與酚樹脂之調配比率,較佳為例如以相對於環氧樹脂成分中之環氧基每1當量,酚樹脂中之羥基成為0.5~2.0當量之方式進行調配。更佳為0.8~1.2當量。即,其原因在於,若兩者之調配比率偏離上述範圍,則不會進行充分之硬化反應,硬化物之特性變得容易劣化。 The blending ratio of the epoxy resin and the phenol resin is preferably, for example, such that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. In other words, when the blending ratio of the two is out of the above range, a sufficient curing reaction is not performed, and the properties of the cured product are easily deteriorated.
膜狀接著劑3較佳為含有於25℃下為固體之熱硬化性樹脂及於25℃下為液狀之熱硬化性樹脂。藉此,可獲得良好之低溫貼附性。於本說明書中,所謂於25℃下為液狀,係指於25℃下黏度未達5000Pa‧s。另一方面,所謂於25℃下為固體,係指於25℃下黏度為5000Pa‧s以上。再者,黏度可使用Thermo Scientific公司製造之型號HAAKE Roto VISCO1測定。 The film-like adhesive 3 is preferably a thermosetting resin which is solid at 25 ° C and a thermosetting resin which is liquid at 25 ° C. Thereby, good low temperature adhesion can be obtained. In the present specification, the term "liquid at 25 ° C" means that the viscosity at 25 ° C is less than 5000 Pa ‧ . On the other hand, the term "solid at 25 ° C" means that the viscosity at 25 ° C is 5,000 Pa ‧ or more. Further, the viscosity can be measured using a model HAAKE Roto VISCO1 manufactured by Thermo Scientific.
於膜狀接著劑3中,較佳為(25℃下為固體之熱硬化性樹脂之重量)/(25℃下為液狀之熱硬化性樹脂之重量)為49/51~10/90,更佳為45/55~40/60。藉由使(25℃下為固體之熱硬化性樹脂之重量)/(25℃下為液狀之熱硬化性樹脂之重量)為49/51以下,變得容易於40℃左右之低溫下將膜狀接著劑3貼附於半導體晶圓,從而可提高低溫貼附性。另一方面,藉由使(25℃下為固體之熱硬化性樹脂之重量)/(25℃下為液狀之熱硬化性樹脂之重量)為10/90以下,可抑制膜狀接著劑3之黏著性變得過高而使拾取性變得良好。 In the film-like adhesive 3, it is preferably (the weight of the thermosetting resin which is solid at 25 ° C) / (the weight of the thermosetting resin which is liquid at 25 ° C) is 49/51 to 10/90, More preferably 45/55~40/60. By making (the weight of the thermosetting resin which is solid at 25 ° C) / (the weight of the thermosetting resin which is liquid at 25 ° C) 49/51 or less, it becomes easy to be low temperature of about 40 ° C. The film-like adhesive 3 is attached to the semiconductor wafer, thereby improving low-temperature adhesion. On the other hand, when (the weight of the thermosetting resin which is solid at 25 ° C) / (the weight of the thermosetting resin which is liquid at 25 ° C) is 10/90 or less, the film-like adhesive 3 can be suppressed. The adhesiveness becomes too high and the pick-up property becomes good.
膜狀接著劑3中之熱塑性樹脂及硬化性樹脂之合計含量相對於膜狀接著劑3整體,較佳為5重量%以上,更佳為10重量%以上。若上述合計含量為5重量%以上,則容易保持作為膜之形狀。又,熱塑性樹脂及硬化性樹脂之合計含量較佳為相對於膜狀接著劑3整體,為70重量%以下,更佳為60重量%以下。若上述合計含量為70重量%以下,則導電性粒子較佳地表現出導電性。 The total content of the thermoplastic resin and the curable resin in the film-like adhesive 3 is preferably 5% by weight or more, and more preferably 10% by weight or more based on the total amount of the film-like adhesive 3. When the total content is 5% by weight or more, the shape of the film is easily maintained. In addition, the total content of the thermoplastic resin and the curable resin is preferably 70% by weight or less, and more preferably 60% by weight or less based on the entire film-like adhesive 3. When the total content is 70% by weight or less, the conductive particles preferably exhibit conductivity.
膜狀接著劑3中,較佳為於將上述熱塑性樹脂之重量設為A,將上述熱硬化性樹脂及上述硬化劑之合計重量設為B時,重量比率(A)/(B)在1/9~4/6之範圍內。若上述重量比率(A)/(B)為4/6以下,則硬化成分變得充分而變得容易提高熱硬化後之玻璃轉移溫度。另一方面,若上述重量比率(A)/(B)為1/9以上,則膜化變得容易。 In the film-like adhesive 3, it is preferable that the weight ratio (A)/(B) is 1 when the weight of the thermoplastic resin is A and the total weight of the thermosetting resin and the curing agent is B. Within the range of /9~4/6. When the weight ratio (A)/(B) is 4/6 or less, the hardening component becomes sufficient, and the glass transition temperature after thermosetting is easily increased. On the other hand, when the weight ratio (A)/(B) is 1/9 or more, film formation becomes easy.
膜狀接著劑3含有導電性粒子。作為上述導電性粒子並無特別限定,可列舉:鎳粒子、銅粒子、銀粒子、金粒子、鋁粒子、碳黑粒子、作為纖維狀粒子之奈米碳管、利用導電性材料被覆核心粒子之表面而成之粒子等。 The film-like adhesive 3 contains conductive particles. The conductive particles are not particularly limited, and examples thereof include nickel particles, copper particles, silver particles, gold particles, aluminum particles, carbon black particles, carbon nanotubes as fibrous particles, and core particles coated with a conductive material. Particles formed on the surface.
上述核心粒子可為導電性亦可為非導電性,例如可使用玻璃粒子等。作為被覆核心粒子之表面之導電性材料,可使用鎳、銅、銀、金、鋁等金屬。 The core particles may be electrically conductive or non-conductive, and for example, glass particles or the like may be used. As the conductive material covering the surface of the core particle, a metal such as nickel, copper, silver, gold or aluminum can be used.
上述導電性粒子之形狀並無特別限定,例如可使用薄片(flake)狀、針狀、絲(filament)狀、球狀、鱗片狀者等。其中,就分散性、填充率之提高之方面而言,較佳為薄片狀。 The shape of the conductive particles is not particularly limited, and for example, a flake shape, a needle shape, a filament shape, a spherical shape, or a scaly shape can be used. Among them, in terms of improvement in dispersibility and filling rate, it is preferably in the form of flakes.
上述導電性粒子之平均粒徑並無特別限定,但相對於膜狀接著劑3之厚度,較佳為0.001倍以上(膜狀接著劑3之厚度×0.001以上),更佳為0.1倍以上。藉由設為0.001倍以上,容易提高熱電導度。其結果,可更高效率地向外部釋放來自半導體元件等之熱。又,上述導電性粒子之平均粒徑相對於膜狀接著劑3之厚度,較佳為1倍以下(膜狀 接著劑3之厚度以下),更佳為0.8倍以下。藉由設為1倍以下,可抑制晶片破裂。再者,上述導電性粒子之平均粒徑係利用雷射繞射式之粒度分佈計(HORIBA製造,裝置名:LA-910)而求出之值。 The average particle diameter of the conductive particles is not particularly limited, but is preferably 0.001 times or more (thickness of the film-like adhesive 3 × 0.001 or more), more preferably 0.1 times or more, with respect to the thickness of the film-like adhesive 3 . By setting it as 0.001 times or more, it is easy to improve a thermal conductivity. As a result, heat from a semiconductor element or the like can be released to the outside more efficiently. Further, the average particle diameter of the conductive particles is preferably 1 time or less with respect to the thickness of the film-like adhesive 3 (film shape) The thickness of the subsequent agent 3 is not more than 0.8 times, more preferably 0.8 times or less. By setting it to 1 time or less, a wafer crack can be suppressed. In addition, the average particle diameter of the above-mentioned conductive particles is a value obtained by a laser diffraction type particle size distribution meter (manufactured by HORIBA, device name: LA-910).
導電性粒子之比重較佳為0.7以上,更佳為1以上。藉由設為0.7以上,可抑制導電性粒子於接著劑組合物溶液(清漆)之製作時浮起而使導電性粒子之分散變得不均勻。又,導電性粒子之比重較佳為22以下,更佳為21以下。藉由將上述比重設為22以下,可抑制導電性粒子下沈而使導電性粒子之分散變得不均勻。 The specific gravity of the conductive particles is preferably 0.7 or more, and more preferably 1 or more. When it is set to 0.7 or more, it is suppressed that the electroconductive particle floats at the time of preparation of the adhesive composition solution (varnish), and the dispersion of electroconductive particle becomes uneven. Further, the specific gravity of the conductive particles is preferably 22 or less, more preferably 21 or less. By setting the above specific gravity to 22 or less, it is possible to suppress the scattering of the conductive particles and to make the dispersion of the conductive particles non-uniform.
膜狀接著劑3中之導電性粒子之含量相對於膜狀接著劑3整體,較佳為30重量%以上,更佳為40重量%以上。又,上述導電性粒子之先前之含量較佳為95重量%以下,更佳為94重量%以下。藉由將上述導電性粒子之上述含量設為30重量%以上,容易提高熱電導度。其結果,可更高效率地向外部釋放來自半導體元件等之熱。另一方面,藉由將上述導電性粒子之上述含量設為95重量%以下,膜化變得容易。 The content of the conductive particles in the film-like adhesive 3 is preferably 30% by weight or more, and more preferably 40% by weight or more based on the entire film-like adhesive 3. Further, the previous content of the conductive particles is preferably 95% by weight or less, more preferably 94% by weight or less. By setting the content of the conductive particles to 30% by weight or more, it is easy to increase the thermal conductivity. As a result, heat from a semiconductor element or the like can be released to the outside more efficiently. On the other hand, by setting the content of the conductive particles to 95% by weight or less, film formation becomes easy.
膜狀接著劑3除上述成分以外亦可適當含有膜製造中通常所使用之調配劑,例如交聯劑等。 The film-like adhesive 3 may contain, in addition to the above components, a preparation agent usually used in the production of a film, for example, a crosslinking agent.
膜狀接著劑3可利用通常之方法製造。例如,製作含有上述各成分之接著劑組合物溶液,將接著劑組合物溶液以成為特定厚度之方式塗佈於基材分隔件上而形成塗佈膜,其後使該塗佈膜乾燥,藉此可製造膜狀接著劑3。 The film-like adhesive 3 can be produced by a usual method. For example, a solution of an adhesive composition containing the above components is prepared, and a solution of the adhesive composition is applied to a substrate separator to have a specific thickness to form a coating film, and then the coating film is dried. This makes it possible to manufacture the film-like adhesive 3.
作為上述接著劑組合物溶液所使用之溶劑,並無特別限定,但較佳為可使上述各成分均勻地溶解、混練或分散之有機溶劑。例如可列舉:二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、丙酮、甲基乙基酮、環己酮等酮系溶劑、甲苯、二甲苯等。 The solvent used for the above-mentioned adhesive composition solution is not particularly limited, but is preferably an organic solvent which can uniformly dissolve, knead or disperse the above components. For example, a ketone solvent such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone or cyclohexanone, toluene or xylene may be mentioned.
作為上述基材分隔件,可使用聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、或表面塗佈有氟系剝離劑、丙烯酸長鏈烷基酯系剝離劑 等剝離劑之塑膠膜或紙等。作為上述接著劑組合物溶液之塗佈方法,例如可列舉輥式塗佈、網版塗佈、凹版塗佈等。又,塗佈膜之乾燥條件並無特別限定,例如可於乾燥溫度70~160℃、乾燥時間1~5分鐘之條件下進行。 As the substrate separator, polyethylene terephthalate (PET), polyethylene, polypropylene, or a surface-coated fluorine-based release agent or a long-chain alkyl acrylate release agent can be used. A plastic film or paper such as a release agent. Examples of the coating method of the above-mentioned adhesive composition solution include roll coating, screen coating, gravure coating, and the like. Further, the drying conditions of the coating film are not particularly limited, and can be carried out, for example, at a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes.
膜狀接著劑3之厚度較佳為5μm以上,更佳為15μm以上。又,膜狀接著劑3之厚度較佳為100μm以下,更佳為50μm以下。若膜狀接著劑3之厚度為5μm以上,則即便產生晶片之翹曲等,亦可防止產生未接著之部位。另一方面,若膜狀接著劑3之厚度為100μm以下,則可抑制由於黏晶時之負荷使膜狀接著劑3過度地露出而污染焊墊等。 The thickness of the film-like adhesive 3 is preferably 5 μm or more, and more preferably 15 μm or more. Further, the thickness of the film-like adhesive 3 is preferably 100 μm or less, and more preferably 50 μm or less. When the thickness of the film-like adhesive 3 is 5 μm or more, even if warpage of the wafer or the like occurs, it is possible to prevent the occurrence of a portion that does not follow. On the other hand, when the thickness of the film-like adhesive 3 is 100 μm or less, it is possible to suppress the film-like adhesive 3 from being excessively exposed due to the load at the time of die bonding, thereby contaminating the pad or the like.
膜狀接著劑3可較佳地用於半導體裝置之製造。其中,可尤佳地用作使導線架等被接著體與半導體晶片接著(進行晶粒黏著)之晶粒黏著膜。作為被接著體,可列舉導線架、內插器(interposer)、半導體晶片等。其中,較佳為導線架。 The film-like adhesive 3 can be preferably used for the manufacture of a semiconductor device. Among them, it can be preferably used as a die attach film for adhering a semiconductor wafer such as a lead frame to a semiconductor wafer (grain adhesion). Examples of the adherend include a lead frame, an interposer, a semiconductor wafer, and the like. Among them, a lead frame is preferred.
膜狀接著劑3較佳為如本實施形態般與切晶帶一體化而作為切晶帶一體型膜狀接著劑提供。但是,本發明之膜狀接著劑亦可不貼附於切晶帶而作為膜狀接著劑單獨體提供。於此情形時,膜狀接著劑可藉由貼附於切晶帶而製成與切晶帶一體型膜狀接著劑相同之構成。 The film-like adhesive 3 is preferably integrated with the dicing tape as in the present embodiment, and is provided as a dicing tape-integrated film-like adhesive. However, the film-like adhesive of the present invention may be provided as a film-like adhesive alone without being attached to a dicing tape. In this case, the film-like adhesive can be formed into the same structure as the dicing tape-integrated film-like adhesive by being attached to the dicing tape.
基材1係成為切晶帶一體型膜狀接著劑10、12之強度母體者,較佳為具有紫外線透過性者。作為基材1,例如可列舉:低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳族 聚醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、聚矽氧樹脂、金屬(箔)、紙等。 The base material 1 is a strength matrix of the dicing tape-integrated film-like adhesives 10 and 12, and preferably has ultraviolet ray permeability. Examples of the substrate 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymerization. Polyolefins such as polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random , alternating) polyester, polycarbonate such as copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, etc. , polyimine, polyetheretherketone, polyimine, polyetherimine, polyamine, fully aromatic polyamine, polyphenylene sulfide, aromatic Polyamide (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, polyoxyxylene resin, metal (foil), paper, and the like.
為了提高與鄰接之層之密接性、保持性等,基材1之表面可實施慣用之表面處理,例如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學或物理處理、利用底塗劑(例如下述黏著物質)之塗佈處理。 In order to improve adhesion to adjacent layers, retention, etc., the surface of the substrate 1 can be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, etc. Coating treatment using a primer (for example, an adhesive described below).
基材1之厚度並無特別限制,可適當決定,但一般為5~200μm左右。 The thickness of the substrate 1 is not particularly limited and may be appropriately determined, but is generally about 5 to 200 μm.
作為黏著劑層2之形成所使用之黏著劑,並無特別限制,例如可使用丙烯酸系黏著劑、橡膠系黏著劑等一般之感壓性接著劑。作為感壓性接著劑,就半導體晶圓或玻璃等避忌污染之電子零件之利用超純水或酒精等有機溶劑之清潔清洗性等方面而言,較佳為以丙烯酸系聚合物為基礎聚合物之丙烯酸系黏著劑。 The adhesive used for the formation of the adhesive layer 2 is not particularly limited, and for example, a general pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive can be used. As a pressure-sensitive adhesive, it is preferable to use an acrylic polymer as a base polymer in terms of cleaning and cleaning properties of an organic solvent such as an ultrapure water or an alcohol, such as a semiconductor wafer or glass. Acrylic adhesive.
作為上述丙烯酸系聚合物,例如可列舉使用以下之一種或兩種以上作為單體成分之丙烯酸系聚合物等:(甲基)丙烯酸烷基酯(例如,甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基之碳數為1~30,尤其是碳數為4~18之直鏈狀或支鏈狀之烷基酯等)及(甲基)丙烯酸環烷基酯(例如,環戊酯、環己酯等)。再者,所謂(甲基)丙烯酸酯,係指丙烯酸酯及/或甲基丙烯酸酯,本發明中所謂之(甲基)為相同之含義。 Examples of the acrylic polymer include an acrylic polymer or the like which uses one or two or more of the following monomers: a (meth)acrylic acid alkyl ester (for example, a methyl ester, an ethyl ester, a propyl ester or a different ester). Propyl ester, butyl ester, isobutyl ester, second butyl ester, tert-butyl ester, amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, Alkenes such as decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, cetyl ester, octadecyl ester, eicosyl ester a carbon number of 1 to 30, especially a linear or branched alkyl ester having a carbon number of 4 to 18, and a cycloalkyl (meth)acrylate (for example, cyclopentyl ester, cyclohexyl) Ester, etc.). Further, the term "(meth)acrylate" means an acrylate and/or a methacrylate, and the term "meth" in the present invention has the same meaning.
上述丙烯酸系聚合物亦可以凝聚力、耐熱性等之改質為目的,而視需要含有可與上述(甲基)丙烯酸烷基酯或環烷基酯共聚之其他單體成分所對應之單元。作為此種單體成分,例如可列舉:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、亞甲基 丁二酸、順丁烯二酸、反丁烯二酸、丁烯酸等含有羧基之單體;順丁烯二酸酐、亞甲基丁二酸酐等酸酐單體;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等含有羥基之單體;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含有磺酸基之單體;丙烯醯磷酸2-羥基乙酯等含有磷酸基之單體;丙烯醯胺、丙烯腈等。該等可共聚之單體成分可使用一種或兩種以上。該等可共聚之單體之使用量較佳為全部單體成分之40重量%以下。 The acrylic polymer may be modified for cohesive strength, heat resistance, etc., and may contain a unit corresponding to another monomer component copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester, if necessary. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, and methylene. a monomer having a carboxyl group such as succinic acid, maleic acid, fumaric acid or crotonic acid; an acid anhydride monomer such as maleic anhydride or methylene succinic anhydride; (meth)acrylic acid 2- Hydroxyethyl ester, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, (A) a hydroxyl group-containing monomer such as 10-hydroxydecyl acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrene sulfonic acid, allylic Sulfonic acid, 2-(meth)acrylamidoxime-2-methylpropanesulfonic acid, (meth)acrylamide, propanesulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloxyloxy a monomer containing a sulfonic acid group such as naphthalenesulfonic acid; a monomer containing a phosphoric acid group such as 2-hydroxyethyl phosphonium phosphate; acrylamide or acrylonitrile. These copolymerizable monomer components may be used alone or in combination of two or more. The amount of the copolymerizable monomers used is preferably 40% by weight or less based on the total of the monomer components.
進而,上述丙烯酸系聚合物亦可以交聯為目的而視需要含有多官能性單體等作為共聚用單體成分。作為此種多官能性單體,例如可列舉:己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、(甲基)丙烯酸胺基甲酸酯等。該等多官能性單體亦可使用一種或兩種以上。就黏著特性等方面而言,多官能性單體之使用量較佳為全部單體成分之30重量%以下。 Further, the acrylic polymer may be crosslinked for the purpose of containing a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol di(meth)acrylate. Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(methyl) Acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, (meth) acrylate urethane, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total of the monomer components in terms of adhesion characteristics and the like.
上述丙烯酸系聚合物係藉由使單一單體或兩種以上之單體混合物聚合而獲得。聚合可以溶液聚合、乳化聚合、塊狀聚合、懸濁聚合等任一種方式進行。就防止污染潔淨之被接著體等方面而言,較佳為低分子量物質之含量較小。就該方面而言,丙烯酸系聚合物之數量平均分子量較佳為30萬以上,進而較佳為40萬~300萬左右。 The above acrylic polymer is obtained by polymerizing a single monomer or a mixture of two or more kinds of monomers. The polymerization can be carried out in any of a solution polymerization, an emulsion polymerization, a bulk polymerization, or a suspension polymerization. In terms of preventing the contamination from being cleaned, it is preferred that the content of the low molecular weight substance is small. In this respect, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.
又,於上述黏著劑中,亦可為了提高作為基礎聚合物之丙烯酸 系聚合物等之數量平均分子量而適當採用外部交聯劑。作為外部交聯方法之具體手段,可列舉添加聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂之交聯劑而進行反應之方法。於使用外部交聯劑之情形時,其使用量根據與應交聯之基礎聚合物之平衡,進而根據黏著劑之使用用途而適當決定。一般而言,較佳為相對於上述基礎聚合物100重量份調配約5重量份以下,進而較佳為調配0.1~5重量份。進而,於黏著劑中,除上述成分以外,亦可視需要使用先前公知之各種黏著賦予劑、抗老化劑等添加劑。 Further, in the above adhesive, it is also possible to increase the acrylic acid as a base polymer. The number average molecular weight of the polymer or the like is appropriately used as an external crosslinking agent. A specific method of the external crosslinking method is a method in which a reaction is carried out by adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent. In the case of using an external crosslinking agent, the amount used is appropriately determined depending on the balance with the base polymer to be crosslinked, and further depending on the intended use of the adhesive. In general, it is preferably formulated in an amount of about 5 parts by weight or less based on 100 parts by weight of the base polymer, and more preferably 0.1 to 5 parts by weight. Further, in the adhesive, in addition to the above components, additives such as various conventionally known adhesion-imparting agents and anti-aging agents may be used as needed.
黏著劑層2可藉由放射線硬化型黏著劑而形成。放射線硬化型黏著劑可藉由紫外線等放射線之照射增大交聯度而輕易地降低其黏著力。 The adhesive layer 2 can be formed by a radiation hardening type adhesive. The radiation-curable adhesive can easily reduce the adhesion by increasing the degree of crosslinking by irradiation of ultraviolet rays or the like.
僅向圖1所示之黏著劑層2之與工件貼附部分對應之部分2a照射放射線,藉此可設置與其他部分2b之黏著力之差。於此情形時,未硬化之由放射線硬化型黏著劑形成之上述部分2b與膜狀接著劑3黏著,而可確保切晶時之保持力。 Only the portion 2a corresponding to the workpiece attachment portion of the adhesive layer 2 shown in Fig. 1 is irradiated with radiation, whereby the difference in adhesion to the other portions 2b can be set. In this case, the portion 2b formed of the radiation-curable adhesive which is not hardened adheres to the film-like adhesive 3, and the holding force at the time of crystal cutting can be ensured.
又,配合圖2所示之膜狀接著劑3'使放射線硬化型之黏著劑層2硬化,藉此可形成黏著力明顯降低之上述部分2a。於此情形時,可將晶圓環固定於未硬化之由放射線硬化型黏著劑形成之上述部分2b。 Further, the radiation-curable adhesive layer 2 is cured by the film-like adhesive 3' shown in Fig. 2, whereby the portion 2a in which the adhesive force is remarkably lowered can be formed. In this case, the wafer ring can be fixed to the above-mentioned portion 2b formed of a radiation-curable adhesive which is not hardened.
即,於藉由放射線硬化型黏著劑形成黏著劑層2之情形時,較佳為以黏著劑層2之上述部分2a之黏著力<其他部分2b之黏著力的方式對上述部分2a照射放射線。 In other words, in the case where the adhesive layer 2 is formed by the radiation-curable adhesive, it is preferable that the portion 2a is irradiated with radiation such that the adhesive force of the portion 2a of the adhesive layer 2 is different from the adhesion of the other portion 2b.
上述放射線硬化型黏著劑可無特別限制地使用具有碳-碳雙鍵等放射線硬化性之官能基且顯示黏著性者。作為放射線硬化型黏著劑,例如可例示於上述丙烯酸系黏著劑、橡膠系黏著劑等一般之感壓性黏著劑中調配放射線硬化性之單體成分或低聚物成分而成之添加型之放射線硬化型黏著劑。 The radiation-curable pressure-sensitive adhesive can be used without any particular limitation, and a functional group having radiation curability such as a carbon-carbon double bond can be used. As the radiation-curable adhesive, for example, an additive type radiation in which a radiation curable monomer component or an oligomer component is blended in a general pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive can be exemplified. Hardening adhesive.
作為所調配之放射線硬化性之單體成分,例如可列舉:胺基甲酸酯低聚物、(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。又,放射線硬化性之低聚物成分可列舉胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物,其分子量在100~30000左右之範圍內者較合適。關於放射線硬化性之單體成分或低聚物成分之調配量,可根據上述黏著劑層之種類適當決定可降低黏著劑層之黏著力之量。一般而言,上述調配量相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份例如為5~500重量份,較佳為40~150重量份左右。 Examples of the radiation curable monomer component to be blended include a urethane oligomer, a (meth)acrylic acid urethane, a trimethylolpropane tri(meth)acrylate, and the like. Methyl hydroxymethane tetra(meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate Ester, 1,4-butanediol di(meth)acrylate, and the like. Further, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and the molecular weight thereof is about 100 to 30,000. Within the scope of the appropriate. The amount of the radiation curable monomer component or the oligomer component can be appropriately determined according to the type of the above-mentioned adhesive layer to reduce the adhesion of the adhesive layer. In general, the amount of the compound is, for example, 5 to 500 parts by weight, preferably 40 to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.
又,作為放射線硬化型黏著劑,除了以上所述之添加型之放射線硬化型黏著劑以外,可列舉使用於聚合物側鏈或主鏈中或主鏈末端具有碳-碳雙鍵者作為基礎聚合物的內在型之放射線硬化型黏著劑。內在型之放射線硬化型黏著劑無需含有或不大量含有作為低分子成分之低聚物成分等,因此不會有低聚物成分等經時地於黏著劑中移動之情況,而形成穩定之層構造之黏著劑層,故而較佳。 Further, as the radiation-curable adhesive, in addition to the above-described addition type radiation-curable adhesive, a base polymerization can be exemplified for use in a polymer side chain or a main chain or a carbon-carbon double bond at a main chain terminal. An intrinsic type of radiation-curing adhesive for objects. The intrinsic type radiation curable adhesive does not need to contain or contain a large amount of an oligomer component as a low molecular component, and therefore does not have an oligomer component or the like to move through the adhesive over time, thereby forming a stable layer. The adhesive layer is constructed so that it is preferred.
上述具有碳-碳雙鍵之基礎聚合物可無特別限制地使用具有碳-碳雙鍵且具有黏著性者。作為此種基礎聚合物,較佳為以丙烯酸系聚合物為基本骨架者。作為丙烯酸系聚合物之基本骨架,可列舉上述例示之丙烯酸系聚合物。 The above base polymer having a carbon-carbon double bond can be used without any particular limitation, and has a carbon-carbon double bond and has adhesiveness. As such a base polymer, it is preferred to use an acrylic polymer as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.
向上述丙烯酸系聚合物中導入碳-碳雙鍵之方法並無特別限制,可採用各種方法,但碳-碳雙鍵導入於聚合物側鏈之情形使分子設計容易。例如可列舉如下方法:預先使具有官能基之單體與丙烯酸系聚合物共聚,其後與具有能與該官能基反應之官能基及碳-碳雙鍵之化 合物於維持碳-碳雙鍵之放射線硬化性之情況下進行縮合或加成反應。 The method of introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. However, when a carbon-carbon double bond is introduced into the polymer side chain, molecular design is easy. For example, a method of copolymerizing a monomer having a functional group with an acrylic polymer and thereafter having a functional group capable of reacting with the functional group and a carbon-carbon double bond may be mentioned. The compound undergoes a condensation or addition reaction while maintaining the radiation hardenability of the carbon-carbon double bond.
作為該等官能基之組合例,可列舉羧酸基與環氧基、羧酸基與氮丙啶基、羥基與異氰酸酯基等。於該等官能基之組合之中,就反應追蹤之容易性而言,較佳為羥基與異氰酸酯基之組合。又,只要是藉由該等官能基之組合而產生上述具有碳-碳雙鍵之丙烯酸系聚合物之組合,則官能基可位於丙烯酸系聚合物與上述化合物中之任一側,但為上述較佳之組合時,較佳為丙烯酸系聚合物具有羥基,上述化合物具有異氰酸酯基之情形。於此情形時,作為具有碳-碳雙鍵之異氰酸酯化合物,例如可列舉甲基丙烯醯異氰酸酯、異氰酸2-甲基丙烯醯氧基乙酯、異氰酸間異丙烯基-α,α-二甲基苄酯等。又,作為丙烯酸系聚合物,可使用使上述例示之含有羥基之單體或2-羥基乙基乙烯醚、4-羥基丁基乙烯醚、二乙二醇單乙烯醚之醚系化合物等共聚而成者。 Examples of the combination of the functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group. Among the combinations of such functional groups, a combination of a hydroxyl group and an isocyanate group is preferred in terms of ease of reaction tracking. Further, as long as a combination of the above-mentioned functional groups is used to produce the above-mentioned acrylic polymer having a carbon-carbon double bond, the functional group may be located on either side of the acrylic polymer and the above compound, but the above In a preferred combination, it is preferred that the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate, 2-methylpropenyloxyethyl isocyanate, and iso-isopropenyl-α, α. - dimethyl benzyl ester and the like. Further, as the acrylic polymer, a monomer having a hydroxyl group as exemplified above, an ether compound of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether, or the like can be used. Adult.
上述內在型之放射線硬化型黏著劑可單獨使用上述具有碳-碳雙鍵之基礎聚合物(尤其是丙烯酸系聚合物),但亦可以不使特性惡化之程度調配上述放射線硬化性之單體成分或低聚物成分。放射線硬化性之低聚物成分等通常相對於基礎聚合物100重量份為30重量份之範圍內,較佳為0~10重量份之範圍。 The above-mentioned intrinsic radiation-curable adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, but the radiation curable monomer component may be blended without deteriorating the properties. Or oligomer component. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer.
於上述放射線硬化型黏著劑中,藉由紫外線等硬化之情形時含有光聚合起始劑。作為光聚合起始劑,例如可列舉:4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物;甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉代丙烷-1等苯乙酮系化合物;安息香***、安息香異丙醚、大茴香偶姻甲醚等安息香醚系化合物;苄基二甲基縮酮等縮酮系化合物;2-萘磺醯氯等芳香族磺醯氯系化合物;1-苯酮-1,1-丙二 酮-2-(鄰乙氧基羰基)肟等光活性肟系化合物;二苯甲酮、苯甲醯苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物;噻噸酮、2-氯-噻噸酮、2-甲基-噻噸酮、2,4-二甲基-噻噸酮、異丙基-噻噸酮、2,4-二氯-噻噸酮、2,4-二乙基-噻噸酮、2,4-二異丙基-噻噸酮等噻噸酮系化合物;樟腦醌;鹵化酮;醯基膦氧化物;醯基膦酸酯等。光聚合起始劑之調配量相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份例如為0.05~20重量份左右。 In the above radiation curable adhesive, when it is cured by ultraviolet rays or the like, a photopolymerization initiator is contained. As the photopolymerization initiator, for example, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one, α-hydroxy-α,α'-dimethylacetophenone can be exemplified. , an α-keto alcohol compound such as 2-methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylbenzene Acetophenone-based compound such as ketone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1; benzoin a benzoin ether compound such as diethyl ether, benzoin isopropyl ether, fennel aceton methyl ether; a ketal compound such as benzyl dimethyl ketal; an aromatic sulfonium chloride compound such as 2-naphthalene sulfonium chloride; Ketone-1,1-propane a photoactive lanthanide compound such as ketone-2-(o-ethoxycarbonyl)anthracene; benzophenone, benzamidine benzoic acid, 3,3'-dimethyl-4-methoxybenzophenone, etc. Benzophenone-based compound; thioxanthone, 2-chloro-thioxanthone, 2-methyl-thioxanthone, 2,4-dimethyl-thioxanthone, isopropyl-thioxanthone, 2,4 - thioxanthone compounds such as dichloro-thioxanthone, 2,4-diethyl-thioxanthone, 2,4-diisopropyl-thioxanthone; camphorquinone; halogenated ketone; mercaptophosphine oxide ; mercaptophosphonate and the like. The amount of the photopolymerization initiator to be added is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.
又,作為上述放射線硬化型黏著劑,例如可列舉日本專利特開昭60-196956號公報所揭示之橡膠系黏著劑或丙烯酸系黏著劑等,其含有具有兩個以上不飽和鍵之加成聚合性化合物、具有環氧基之烷氧基矽烷等光聚合性化合物,及羰基化合物、有機硫化合物、過氧化物、胺、鎓鹽系化合物等光聚合起始劑。 In addition, as the radiation-curable adhesive, for example, a rubber-based adhesive or an acrylic adhesive disclosed in JP-A-60-196956, which contains an addition polymerization having two or more unsaturated bonds, may be mentioned. A photopolymerizable compound such as a compound or an alkoxysilane having an epoxy group; and a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine or a phosphonium salt compound.
於上述放射線硬化型之黏著劑層2中,亦可視需要含有利用放射線照射而著色之化合物。藉由使利用放射線照射而著色之化合物包含於黏著劑層2,可僅使經放射線照射之部分著色。利用放射線照射而著色之化合物係於放射線照射前為無色或淡色,但利用放射線照射而變為有色之化合物,例如可列舉隱色染料等。利用放射線照射而著色之化合物之使用比率可適當設定。 In the radiation-curable adhesive layer 2, a compound which is colored by radiation irradiation may be contained as needed. By including the compound colored by the radiation irradiation on the adhesive layer 2, only the portion irradiated with the radiation can be colored. The compound colored by radiation irradiation is a colorless or pale color before radiation irradiation, but a compound which becomes colored by radiation irradiation, and examples thereof include a leuco dye. The ratio of use of the compound colored by radiation irradiation can be appropriately set.
黏著劑層2之厚度並無特別限定,但就晶片切斷面之缺損防止及接著層之固定保持之兼顧性等方面而言,較佳為1~50μm左右。較佳為2~30μm,進而較佳為5~25μm。 The thickness of the adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm in terms of the prevention of the defect of the cut surface of the wafer and the balance of the adhesion of the adhesive layer. It is preferably 2 to 30 μm, and more preferably 5 to 25 μm.
切晶帶一體型膜狀接著劑10、12之膜狀接著劑3、3'較佳為由分隔件所保護(未圖示)。分隔件具有作為於供於實際使用之前保護膜狀接著劑3、3'之保護材之功能。分隔件於將工件貼附於切晶帶一體型膜狀接著劑之膜狀接著劑3、3'上時被剝離。作為分隔件,可使用聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、或表面塗佈有氟系剝離 劑、丙烯酸長鏈烷基酯系剝離劑等剝離劑之塑膠膜或紙等。 The film-like adhesives 3, 3' of the dicing tape-integrated film-like adhesives 10, 12 are preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the film-like adhesives 3, 3' before being used for practical use. The separator is peeled off when the workpiece is attached to the film-like adhesives 3, 3' of the diced tape-integrated film-like adhesive. As the separator, polyethylene terephthalate (PET), polyethylene, polypropylene, or fluorine-based peeling may be used. Plastic film or paper of a release agent such as a long-chain alkyl ester release agent such as acrylic acid.
切晶帶一體型膜狀接著劑10、12可利用通常之方法製造。例如,可藉由使切晶帶11之黏著劑層2與膜狀接著劑3、3'貼合而製造切晶帶一體型膜狀接著劑10、12。 The dicing tape-integrated film-like adhesives 10 and 12 can be produced by a usual method. For example, the dicing tape-integrated film-like adhesives 10 and 12 can be produced by bonding the adhesive layer 2 of the dicing tape 11 to the film-like adhesives 3 and 3'.
於切晶帶一體型膜狀接著劑10、12中,較佳為膜狀接著劑3、3'與切晶帶11之剝離力於剝離速度:300mm/min、剝離溫度:25℃、T型剝離之條件下在0.01~3.00N/20mm之範圍內,更佳為在0.02~2.00N/20mm之範圍內。若上述剝離力為0.01N/20mm以上,則可抑制切晶時之晶片飛散。又,若上述剝離力為3.00N/20mm以下,則可使拾取變得容易。 In the dicing tape-integrated film-like adhesives 10 and 12, the peeling force of the film-like adhesives 3, 3' and the dicing tape 11 is preferably at a peeling speed: 300 mm/min, a peeling temperature: 25 ° C, and a T-shape. The peeling condition is in the range of 0.01 to 3.00 N/20 mm, more preferably in the range of 0.02 to 2.00 N/20 mm. When the peeling force is 0.01 N/20 mm or more, scattering of the wafer at the time of crystal cutting can be suppressed. Moreover, when the peeling force is 3.00 N/20 mm or less, picking up can be facilitated.
本實施形態之半導體裝置之製造方法至少包括:步驟A,將半導體晶圓貼附於上述切晶帶一體型膜狀接著劑之上述膜狀接著劑,步驟B,將上述半導體晶圓連同上述膜狀接著劑一起進行切割,步驟C,拾取藉由切晶而獲得之附膜狀接著劑之半導體元件,步驟D,使上述附膜狀接著劑之半導體元件與被接著體接觸後,將上述膜狀接著劑於50~150℃之範圍內且於0.05~40MPa之範圍內保持0.01~2秒,及步驟E,於上述步驟D後使上述膜狀接著劑熱硬化。 The method for manufacturing a semiconductor device according to the present embodiment includes at least a step A of attaching a semiconductor wafer to the film-like adhesive of the diced tape-integrated film-like adhesive, and step B, the semiconductor wafer together with the film. The adhesive is cut together, step C, picking up the semiconductor element with the film-like adhesive obtained by dicing, step D, bringing the semiconductor element of the film-like adhesive into contact with the adherend, and then applying the film The adhesive is maintained in the range of 50 to 150 ° C and maintained in the range of 0.05 to 40 MPa for 0.01 to 2 seconds, and in step E, the film-like adhesive is thermally cured after the above step D.
以下,一面參照圖3,一面以使用切晶帶一體型膜狀接著劑10製造半導體裝置之情形為例,對本實施形態之半導體裝置之製造方法進行說明。圖3係用以說明本發明之半導體裝置之一製造方法的圖。 Hereinafter, a method of manufacturing a semiconductor device of the present embodiment will be described by taking a case where a semiconductor device is manufactured using the dicing tape-integrated film-like adhesive 10 as an example with reference to FIG. Fig. 3 is a view for explaining a method of manufacturing a semiconductor device of the present invention.
首先,將半導體晶圓4壓接於切晶帶一體型膜狀接著劑10之膜狀接著劑3之半導體晶圓貼附部分3a上,並對其接著保持而進行固定(貼附步驟、步驟A)。本步驟係一面藉由壓接輥等按壓機構按壓一面進 行。此時,可於40℃左右之低溫下進行壓接。具體而言,壓接溫度(貼附溫度)較佳為35℃以上,更佳為37℃以上。壓接溫度之上限較低者為佳,較佳為50℃以下,更佳為45℃以下。更佳為43℃以下。由於可在40℃左右之低溫下貼附於半導體晶圓4,因此可防止對半導體晶圓4之熱影響,而可抑制半導體晶圓4之翹曲。 First, the semiconductor wafer 4 is pressure-bonded to the semiconductor wafer attaching portion 3a of the film-like adhesive 3 of the dicing tape-integrated film-like adhesive 10, and is then held and fixed (attachment step, step A). This step is performed by pressing a pressing mechanism such as a crimping roller. Row. At this time, the pressure bonding can be performed at a low temperature of about 40 °C. Specifically, the pressure bonding temperature (adhesion temperature) is preferably 35 ° C or higher, more preferably 37 ° C or higher. The lower limit of the crimping temperature is preferably lower, preferably 50 ° C or lower, more preferably 45 ° C or lower. More preferably, it is 43 ° C or less. Since it can be attached to the semiconductor wafer 4 at a low temperature of about 40 ° C, the thermal influence on the semiconductor wafer 4 can be prevented, and the warpage of the semiconductor wafer 4 can be suppressed.
上述壓接時之壓力較佳為1×105~1×107Pa,更佳為2×105~8×106Pa。又,作為上述壓接之時間,較佳為1秒~5分鐘,更佳為1分鐘~3分鐘。 The pressure at the time of the above crimping is preferably from 1 × 10 5 to 1 × 10 7 Pa, more preferably from 2 × 10 5 to 8 × 10 6 Pa. Further, the time for the pressure bonding is preferably from 1 second to 5 minutes, more preferably from 1 minute to 3 minutes.
繼而,將半導體晶圓4連同膜狀接著劑3一起進行切割(步驟B)。藉此,將半導體晶圓4切斷為特定之尺寸而進行單片化,從而製造半導體晶片5。切晶係例如自半導體晶圓4之電路面側起按照常法進行。又,於本步驟中,例如可採用切入至切晶帶一體型膜狀接著劑10之被稱為全切之切斷方式等。作為本步驟所使用之切晶裝置,並無特別限定,可使用先前公知者。又,半導體晶圓4藉由切晶帶一體型膜狀接著劑10進行接著固定,因此可抑制晶片缺損或晶片飛散,且亦可抑制半導體晶圓4之破損。 Then, the semiconductor wafer 4 is cut together with the film-like adhesive 3 (step B). Thereby, the semiconductor wafer 4 is cut into a specific size and singulated to manufacture the semiconductor wafer 5. The dicing system is carried out, for example, from the circuit surface side of the semiconductor wafer 4 in accordance with a conventional method. Moreover, in this step, for example, a cutting method called a full cut that cuts into the dicing tape-integrated film-like adhesive 10 can be used. The crystal cutting device used in this step is not particularly limited, and those known in the art can be used. Further, since the semiconductor wafer 4 is subsequently fixed by the dicing tape-integrated film-like adhesive 10, wafer defects or wafer scattering can be suppressed, and damage of the semiconductor wafer 4 can be suppressed.
繼而,進行半導體晶片5之拾取(步驟C),以使接著固定於切晶帶一體型膜狀接著劑10之半導體晶片5剝離。作為拾取之方法,並無特別限定,可採用先前公知之各種方法。例如,可列舉自切晶帶一體型膜狀接著劑10側利用針向上頂各個半導體晶片5,利用拾取裝置拾取被頂起之半導體晶片5的方法等。 Then, the semiconductor wafer 5 is picked up (step C) so that the semiconductor wafer 5 which is subsequently fixed to the dicing tape-integrated film-like adhesive 10 is peeled off. The method of picking up is not particularly limited, and various methods known in the prior art can be employed. For example, a method of picking up the semiconductor wafer 5 that is lifted up by a pick-up device from the side of the dicing tape-integrated film-like adhesive 10 on the side of the semiconductor wafer 5 with the needle up.
此處,於黏著劑層2為紫外線硬化型之情形時,拾取係於向該黏著劑層2照射紫外線後進行。藉此,黏著劑層2之對膜狀接著劑3之黏著力降低,而使附膜狀接著劑3之半導體晶片5之剝離變得容易。其結果,可於不使半導體晶片5受損之情況下進行拾取。紫外線照射時之照射強度、照射時間等條件並無特別限定,只要視需要適當設定即 可。 Here, in the case where the adhesive layer 2 is an ultraviolet curing type, the pickup is performed after irradiating the adhesive layer 2 with ultraviolet rays. Thereby, the adhesion of the adhesive layer 2 to the film-like adhesive 3 is lowered, and the peeling of the semiconductor wafer 5 with the film-like adhesive 3 is facilitated. As a result, pickup can be performed without damaging the semiconductor wafer 5. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and are appropriately set as needed. can.
經拾取之半導體晶片5經由膜狀接著劑3接著固定於被接著體6(晶粒黏著、步驟D)。此時,使附膜狀接著劑之半導體元件5與被接著體6接觸後,將膜狀接著劑3於50~150℃之範圍內(較佳為80~140℃之範圍內)且於0.05~40MPa(較佳為0.1~30MPa)之範圍內保持0.01~2秒(較佳為0.02~1.5秒)。藉此,可充分地使膜狀接著劑3軟化,而可進行密接。由於在150℃以下之相對較低之溫度下使膜狀接著劑3軟化,因此可防止被接著體6之氧化。 The picked-up semiconductor wafer 5 is then fixed to the adherend 6 via the film-like adhesive 3 (die bonding, step D). At this time, after the semiconductor element 5 with the film-like adhesive is brought into contact with the adherend 6, the film-like adhesive 3 is in the range of 50 to 150 ° C (preferably in the range of 80 to 140 ° C) and 0.05. The range of ~40 MPa (preferably 0.1 to 30 MPa) is maintained for 0.01 to 2 seconds (preferably 0.02 to 1.5 seconds). Thereby, the film-like adhesive 3 can be sufficiently softened, and the adhesion can be performed. Since the film-like adhesive 3 is softened at a relatively low temperature of 150 ° C or lower, oxidation of the adherend 6 can be prevented.
繼而,使膜狀接著劑3熱硬化(步驟E)。藉此,使半導體晶片5與被接著體6接著。熱硬化時之加熱溫度較佳為100℃以上,更佳為120℃以上。熱硬化時之加熱溫度較佳為350℃以下,更佳為300℃以下。若加熱溫度在上述範圍,則可良好地接著。 Then, the film-like adhesive 3 is thermally cured (step E). Thereby, the semiconductor wafer 5 and the adherend 6 are followed. The heating temperature at the time of heat curing is preferably 100 ° C or more, more preferably 120 ° C or more. The heating temperature at the time of heat curing is preferably 350 ° C or lower, more preferably 300 ° C or lower. When the heating temperature is in the above range, it can be satisfactorily continued.
繼而,進行打線接合步驟,即,將被接著體6之端子部(內引線)之前端與半導體晶片5上之電極墊(未圖示)利用接合線7電性連接。作為接合線7,例如可使用金線、鋁線或銅線等。進行打線接合時之溫度較佳為80℃以上,更佳為120℃以上,該溫度較佳為250℃以下,更佳為175℃以下。又,以數秒~數分鐘(例如,1秒~1分鐘)之時間進行加熱。接線係於以成為上述溫度範圍內之方式進行加熱之狀態下,藉由併用由超音波而產生之振動能與由施加壓力而產生之壓接能而進行。 Then, a wire bonding step is performed in which the front end of the terminal portion (inner lead) of the adherend 6 and the electrode pad (not shown) on the semiconductor wafer 5 are electrically connected by the bonding wire 7. As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding is preferably 80 ° C or higher, more preferably 120 ° C or higher, and the temperature is preferably 250 ° C or lower, more preferably 175 ° C or lower. Further, heating is performed for a period of several seconds to several minutes (for example, one second to one minute). The wiring is performed by heating the vibration energy generated by the ultrasonic wave and the pressure contact energy generated by the applied pressure in a state where the heating is performed within the above temperature range.
繼而,進行利用密封樹脂8對半導體晶片5進行密封之密封步驟。本步驟係以保護搭載於被接著體6之半導體晶片5或接合線7為目的而進行。本步驟係藉由利用模具使密封用之樹脂成型而進行。作為密封樹脂8,例如使用環氧系之樹脂。樹脂密封時之加熱溫度較佳為165℃以上,更佳為170℃以上,該加熱溫度較佳為185℃以下,更佳為180℃以下。 Then, a sealing step of sealing the semiconductor wafer 5 with the sealing resin 8 is performed. This step is performed for the purpose of protecting the semiconductor wafer 5 or the bonding wires 7 mounted on the adherend 6 . This step is carried out by molding a resin for sealing with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ° C or higher, more preferably 170 ° C or higher, and the heating temperature is preferably 185 ° C or lower, more preferably 180 ° C or lower.
亦可視需要進一步加熱密封物(後硬化步驟)。藉此,可使於密封步驟中硬化不足之密封樹脂8完全硬化。加熱溫度可適當設定。 The seal can also be further heated as needed (post-hardening step). Thereby, the sealing resin 8 which is insufficiently hardened in the sealing step can be completely cured. The heating temperature can be set as appropriate.
以下,使用實施例詳細地說明本發明,但本發明只要不超出其主旨則並不限定於以下實施例。又,各例中,份只要無特別說明則均為重量基準。 Hereinafter, the present invention will be described in detail by way of examples, but the invention should not be construed as limited to In addition, in each case, each part is a weight basis unless otherwise indicated.
對實施例所使用之成分進行說明。 The components used in the examples will be described.
Teisan Resin SG-70L(丙烯酸系共聚物,Mw:90萬,玻璃轉移溫度:-13℃):Nagase Chemtex(股)製造 Teisan Resin SG-70L (acrylic copolymer, Mw: 900,000, glass transition temperature: -13 ° C): manufactured by Nagase Chemtex
EOCN-1020-4(25℃下為固體之環氧樹脂):日本化藥(股)製造 EOCN-1020-4 (solid epoxy resin at 25 ° C): manufactured by Nippon Chemical Co., Ltd.
HP-4700(25℃下為固體之環氧樹脂):DIC公司製造 HP-4700 (solid epoxy resin at 25 ° C): manufactured by DIC
HP-4032D(25℃下為液體之環氧樹脂):DIC公司製造 HP-4032D (liquid epoxy resin at 25 ° C): manufactured by DIC
JER828(25℃下為液體之環氧樹脂):三菱化學(股)製造 JER828 (liquid epoxy resin at 25 ° C): Mitsubishi Chemical Co., Ltd.
MEH-8000H(作為硬化劑之酚樹脂):明和化成(股)公司製造 MEH-8000H (phenol resin as hardener): manufactured by Minghe Chemical Co., Ltd.
1400YP(導電性粒子、銅粉末、平均粒徑:7μm):三井金屬礦業公司製造 1400YP (conductive particles, copper powder, average particle size: 7μm): manufactured by Mitsui Mining & Mining Co., Ltd.
SPH02J(導電性粒子、銀粉末、平均粒徑:1μm):三井金屬礦業公司製造 SPH02J (conductive particles, silver powder, average particle size: 1 μm): manufactured by Mitsui Mining & Mining Co., Ltd.
TPP-K(硬化促進劑):北興化學公司製造 TPP-K (hardening accelerator): manufactured by Beixing Chemical Company
按照表1所記載之調配比,將表1所記載之各成分及溶劑(甲基乙基酮)加入至混合攪拌機(hybrid mixer)(Keyence製造之HM-500)之攪拌釜中,以攪拌模式攪拌混合3分鐘。將獲得之清漆塗佈於脫模處理膜(三菱樹脂(股)製造之MRA50)後進行乾燥,而製作膜狀接著劑。各膜狀接著劑之厚度如表1所示。再者,表1中亦表示有將熱塑性樹脂之重量設為A、將熱硬化性樹脂與硬化劑之合計重量設為B時的重量比率(A)/(B),及相對於膜狀接著劑整體之導電性粒子之含量(重量%)。 According to the mixing ratio described in Table 1, each component and solvent (methyl ethyl ketone) described in Table 1 were placed in a stirred tank of a hybrid mixer (HM-500 manufactured by Keyence) in a stirring mode. Stir and mix for 3 minutes. The obtained varnish was applied to a release-treated film (MRA50 manufactured by Mitsubishi Resin Co., Ltd.), and then dried to prepare a film-like adhesive. The thickness of each film-like adhesive is shown in Table 1. In addition, Table 1 also shows the weight ratio (A)/(B) when the weight of the thermoplastic resin is A and the total weight of the thermosetting resin and the curing agent is B, and the film shape is followed by The content (% by weight) of the conductive particles as a whole of the agent.
將獲得之膜狀接著劑切出直徑為230mm之圓形,於25℃下貼附於切晶帶(日東電工(股)製造之P2130G)之黏著劑層上而製作切晶帶一體型膜狀接著劑。 The obtained film-like adhesive was cut into a circular shape having a diameter of 230 mm, and attached to an adhesive layer of a dicing tape (P2130G manufactured by Nitto Denko Co., Ltd.) at 25 ° C to prepare a diced tape-integrated film. Follow-up agent.
使用背面研磨機(DISCO(股)製造之DFG-8560),對矽晶圓(信越化學工業(股)製造,厚度為0.6mm)以厚度成為0.2mm之方式進行研磨。繼而,將Ti(鈦)以厚度成為200nm之方式蒸鍍於研磨面。繼而,將Ni(鎳)以厚度成為200nm之方式蒸鍍於Ti層上。繼而,將Ag(銀)以厚度成為300nm之方式蒸鍍於Ni層上。藉由以上方式而製作附背面金屬膜之晶圓。 Using a back grinder (DFG-8560 manufactured by DISCO), the crucible wafer (manufactured by Shin-Etsu Chemical Co., Ltd., thickness: 0.6 mm) was polished to a thickness of 0.2 mm. Then, Ti (titanium) was vapor-deposited on the polished surface so as to have a thickness of 200 nm. Then, Ni (nickel) was deposited on the Ti layer so as to have a thickness of 200 nm. Then, Ag (silver) was deposited on the Ni layer so as to have a thickness of 300 nm. A wafer with a back metal film is produced by the above method.
使用獲得之膜狀接著劑、切晶帶一體型膜狀接著劑、附背面金屬膜之晶圓進行以下之評價。將結果示於表2。 The following evaluation was carried out using the obtained film-like adhesive, a diced tape-integrated film-like adhesive, and a wafer with a back metal film. The results are shown in Table 2.
使膜狀接著劑重疊於膜狀接著劑直至厚度成為500μm為止。其後,於140℃下加熱1小時,進而於260℃下加熱5小時而進行熱硬化。繼而,利用切刀切出長度為22.5mm(測定長度)、寬度為10mm之短條狀,使用固體黏彈性測定裝置(RSAII,Rheometric Scientific(股)製造)測定-50~300℃下之儲存彈性模數。測定條件設為頻率1Hz、升溫速度10℃/min。將此時之175℃下之值作為熱硬化後之175℃下之儲存彈性模數之測定值。進而,算出tanδ(E"(損失彈性模數)/E'(儲存彈性模數))之值,藉此獲得玻璃轉移溫度。將結果示於表2。 The film-like adhesive was superposed on the film-like adhesive until the thickness became 500 μm. Thereafter, the film was heated at 140 ° C for 1 hour, and further heated at 260 ° C for 5 hours to be thermally cured. Then, a short strip having a length of 22.5 mm (measured length) and a width of 10 mm was cut out by a cutter, and the storage elasticity at -50 to 300 ° C was measured using a solid viscoelasticity measuring apparatus (RSAII, manufactured by Rheometric Scientific). Modulus. The measurement conditions were set to a frequency of 1 Hz and a temperature increase rate of 10 ° C/min. The value at 175 ° C at this time was taken as the measured value of the storage elastic modulus at 175 ° C after the heat curing. Further, the value of tan δ (E" (loss elastic modulus) / E' (storage elastic modulus) was calculated to obtain a glass transition temperature. The results are shown in Table 2.
將實施例及比較例之膜狀接著劑於140℃下加熱1小時,進而於260℃下加熱5小時而進行熱硬化。繼而,使用電路元件測定器(日置電機股份有限公司,Milliohm HiTester AC3560),利用4端子法進行測定。將結果示於表2。 The film-like adhesives of the examples and the comparative examples were heated at 140 ° C for 1 hour, and further heated at 260 ° C for 5 hours to be thermally cured. Then, the measurement was performed by a four-terminal method using a circuit component measuring device (Nikkei Electric Co., Ltd., Milliohm HiTester AC3560). The results are shown in Table 2.
出於保持目的而將聚酯黏著帶(日東電工(股)製造之BT-315)貼合於切晶帶一體型膜狀接著劑之膜狀接著劑上後,以100mm×100mm寬度進行切斷而製作樣品。對於該樣品,於剝離速度300mm/min、剝離溫度25℃之條件下,利用T型剝離使膜狀接著劑自切晶帶剝離而測定剝離力。將結果示於表2。 A polyester adhesive tape (BT-315 manufactured by Nitto Denko Co., Ltd.) was attached to a film-like adhesive of a diced tape-integrated film-like adhesive for maintenance purposes, and then cut at a width of 100 mm × 100 mm. And make samples. With respect to this sample, the peeling force was measured by peeling off the film-like adhesive from the dicing tape by T-peeling under the conditions of a peeling speed of 300 mm/min and a peeling temperature of 25 °C. The results are shown in Table 2.
將實施例及比較例之膜狀接著劑於60℃下貼合於厚度500μm、5mm×5mm之矽而製作剪切接著力測定用晶片。於150℃下以0.5MPa保持0.5秒而將該測定用晶片之接著劑面貼合於銅板。銅板使用厚度200μm者(JIS標準C1020)。使用剪切試驗機(Dage公司製造,Dage4000)對該測定用樣品測定膜狀接著劑與銅之剪切接著力。關於剪切試驗之條件,測定速度設為500μm/s,測定間隙設為100μm,載台溫度設為150℃。將剪切接著力在5~200g/25mm2之範圍內之情形評價為「○」,將在5~200g/25mm2之範圍外之情形評價為「×」。將結果連同測定值一起示於表2。 The film-form adhesives of the examples and the comparative examples were bonded to a thickness of 500 μm and 5 mm × 5 mm at 60° C. to prepare a wafer for shear adhesion measurement. The adhesive sheet of the measurement wafer was bonded to the copper plate at 0.5 MPa for 0.5 second at 150 °C. The copper plate is used in a thickness of 200 μm (JIS Standard C1020). The measurement sample was measured for shearing force of the film-like adhesive and copper using a shear tester (Dage 4000, manufactured by Dage Co., Ltd.). Regarding the conditions of the shear test, the measurement speed was set to 500 μm/s, the measurement gap was set to 100 μm, and the stage temperature was set to 150 °C. The case where the shearing force was in the range of 5 to 200 g/25 mm 2 was evaluated as "○", and the case where the shearing force was outside the range of 5 to 200 g / 25 mm 2 was evaluated as "x". The results are shown in Table 2 together with the measured values.
將藉由上述方式而製作之附背面金屬膜之晶圓之金屬膜貼合於藉由上述方式而製作之切晶帶一體型膜狀接著劑之膜狀接著劑面。貼合係使用晶圓貼合機(wafer mounter)(日東精機製造)MA-3000III,於貼附速度10mm/min、貼附溫度70℃之條件下進行。繼而,利用切晶機進行切晶而獲得5×5mm之附膜狀接著劑之晶片。其後,利用黏晶機於銅製之導線架(大日本印刷公司製造,製品名:QFN32,64)進行晶粒黏著。關於晶粒黏著條件,溫度設為150℃,保持時間設為0.5秒,壓力設為0.5MPa。其後,於140℃下保持1小時後,於260℃下加熱5小時而使膜狀接著劑熱硬化。其後,利用密封樹脂(日立化成(股) 製造,GE7470)進行密封,於175℃下加熱5小時而使密封樹脂硬化。其後,切斷成8×8mm而獲得封裝體。 The metal film of the wafer with the back metal film produced by the above method was bonded to the film-like adhesive surface of the diced tape-integrated film-like adhesive prepared by the above method. The bonding was carried out using a wafer mounter (manufactured by Nitto Seiki Co., Ltd.) MA-3000III at a bonding speed of 10 mm/min and a bonding temperature of 70 °C. Then, the crystal was cut by a crystal cutter to obtain a 5 × 5 mm film-attached adhesive wafer. Thereafter, die bonding was performed using a die bonder on a lead frame made of copper (manufactured by Dainippon Printing Co., Ltd., product name: QFN32, 64). Regarding the grain adhesion conditions, the temperature was set to 150 ° C, the holding time was set to 0.5 seconds, and the pressure was set to 0.5 MPa. Thereafter, the film was held at 140 ° C for 1 hour, and then heated at 260 ° C for 5 hours to thermally cure the film-like adhesive. Thereafter, using a sealing resin (Hitachi Chemical Co., Ltd.) Manufactured, GE7470) was sealed and heated at 175 ° C for 5 hours to harden the sealing resin. Thereafter, it was cut into 8 × 8 mm to obtain a package.
於-55~125℃之溫度下對藉由上述方式而製作之10個封裝體進行1000次循環之熱循環試驗。試驗係依據JEDEC(Joint Electron Device Engineering Council,電子設備工程聯合委員會)標準22-A104C條件B而進行。 The thermal cycle test of 1000 cycles of 10 packages prepared by the above method was carried out at a temperature of -55 to 125 °C. The test was carried out in accordance with JEDEC (Joint Electron Device Engineering Council) Standard 22-A104C Condition B.
於熱循環後利用超音波顯微鏡觀察封裝體,將即便確認到1個晶片之剝離之情形評價為「×」,將10個均未確認到剝離之情形評價為「○」。將結果示於表2。 After the thermal cycle, the package was observed by an ultrasonic microscope, and the case where the peeling of one wafer was confirmed was evaluated as "x", and the case where no peeling was confirmed by 10 was evaluated as "○". The results are shown in Table 2.
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JP6967839B2 (en) | 2016-03-23 | 2021-11-17 | 日東電工株式会社 | Heat bonding sheet, heat bonding sheet with dicing tape, manufacturing method of bonded body, power semiconductor device |
CN109005665B (en) * | 2016-03-30 | 2020-12-25 | 琳得科株式会社 | Semiconductor processing sheet |
KR102413907B1 (en) * | 2017-03-29 | 2022-06-29 | 닛토덴코 가부시키가이샤 | Dicing tape provided with a sheet for heat bonding and a sheet for heat bonding |
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US20210174984A1 (en) * | 2017-11-13 | 2021-06-10 | Nitto Denko Corporation | Sinter-bonding composition, sinter-bonding sheet and dicing tape with sinter-bonding sheet |
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