JP5380806B2 - Adhesive sheet, integrated sheet, semiconductor device, and method for manufacturing semiconductor device - Google Patents
Adhesive sheet, integrated sheet, semiconductor device, and method for manufacturing semiconductor device Download PDFInfo
- Publication number
- JP5380806B2 JP5380806B2 JP2007216343A JP2007216343A JP5380806B2 JP 5380806 B2 JP5380806 B2 JP 5380806B2 JP 2007216343 A JP2007216343 A JP 2007216343A JP 2007216343 A JP2007216343 A JP 2007216343A JP 5380806 B2 JP5380806 B2 JP 5380806B2
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- Prior art keywords
- adhesive sheet
- semiconductor chip
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- resin
- wafer
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- 239000000853 adhesive Substances 0.000 title claims description 192
- 230000001070 adhesive effect Effects 0.000 title claims description 191
- 239000004065 semiconductor Substances 0.000 title claims description 109
- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000945 filler Substances 0.000 claims description 39
- 229920005989 resin Polymers 0.000 claims description 35
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- 239000003822 epoxy resin Substances 0.000 claims description 32
- 229920000647 polyepoxide Polymers 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 24
- 238000003860 storage Methods 0.000 claims description 19
- 229920001187 thermosetting polymer Polymers 0.000 claims description 18
- 125000003700 epoxy group Chemical group 0.000 claims description 14
- 238000005259 measurement Methods 0.000 claims description 13
- 239000000155 melt Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000011342 resin composition Substances 0.000 claims description 11
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- 238000005520 cutting process Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000011049 filling Methods 0.000 description 23
- 239000002245 particle Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
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- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
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- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
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- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 3
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- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
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- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
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- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
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- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
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- 229910052918 calcium silicate Inorganic materials 0.000 description 2
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 238000004898 kneading Methods 0.000 description 2
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- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
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- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
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- 235000019792 magnesium silicate Nutrition 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
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- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
Description
本発明は、接着シート、一体型シート、半導体装置、及び半導体装置の製造方法に関する。 The present invention relates to an adhesive sheet, an integrated sheet, a semiconductor device, and a method for manufacturing the semiconductor device.
近年、半導体パッケージの小型化に伴い、半導体チップと同等サイズであるＣＳＰ（Ｃｈｉｐ Ｓｉｚｅ Ｐａｃｋａｇｅ）、さらに、半導体チップを多段に積層したスタックドＣＳＰが普及している（例えば、特開２００１−２７９１９７号公報、特開２００２−２２２９１３号公報、特開２００２−３５９３４６号公報、特開２００１−３０８２６２号公報、特開２００４−７２００９号公報参照）。これらの例として、図１に示す配線４などに起因する凹凸を有する基板３上に半導体チップＡ１を積層したパッケージ、又は、図２に示す同サイズの半導体チップＡ１を２つ以上使用するパッケージであって、ワイヤ２などに起因する凹凸を有する半導体チップ上にさらに別の半導体チップを積層するパッケージなどがある。このようなパッケージには、凹凸を埋込み、かつ上部の半導体チップとの絶縁性を確保することが可能な接着シートが求められている。図１及び図２中、ｂ１は接着剤である。
In recent years, along with the miniaturization of semiconductor packages, CSP (Chip Size Package), which is the same size as a semiconductor chip, and stacked CSP in which semiconductor chips are stacked in multiple stages have become widespread (for example, Japanese Patent Laid-Open No. 2001-279197). JP, 2002-222913, JP, 2002-359346, JP, 2001-308262, JP, 2004-72009). Examples of these include a package in which a semiconductor chip A1 is stacked on a
配線、ワイヤ等の凹凸の充てんには、通常、凹凸の高さより接着シートの厚さを厚くすること、接着シートの溶融粘度を低減し、充てん性を改善することが求められる。しかしながら、一方で、厚さが厚く、溶融粘度が低い接着シートは、積層時にチップ端部から樹脂が流動し、はみだしやすいという問題があった。 In order to fill irregularities such as wiring and wires, it is usually required to increase the thickness of the adhesive sheet from the height of the irregularities, to reduce the melt viscosity of the adhesive sheet, and to improve the filling property. However, on the other hand, the adhesive sheet having a large thickness and a low melt viscosity has a problem that the resin flows from the end portion of the chip during lamination and easily protrudes.
以上の点から、配線やワイヤ等に起因する凹凸の充てん性が優れ、また、凹凸の充てん時にチップ端部からの樹脂のはみだしが少ない、さらには耐熱性や耐湿性を満足する接着シートを得ることが望まれている。
配線やワイヤ等に起因する凹凸の充てん性が優れ、また、凹凸の充てん時にチップ端部からの樹脂のはみだしが少ない、さらには耐熱性や耐湿性を満足する接着シート、一体型シート、半導体装置、及び半導体装置の製造方法を提供することを目的とする。 Adhesive sheets, integrated sheets, and semiconductor devices that have excellent fillability of unevenness caused by wiring, wires, etc., and that have little protrusion of resin from the chip edge when filling the unevenness, and that also satisfy heat resistance and moisture resistance And a method of manufacturing a semiconductor device.
本発明の発明者らは、特定の物性を有する接着シートは耐熱性や耐湿性を満足する接着シートであり、その接着剤シートを使用することにより、基板の配線や半導体チップのワイヤ等の凹凸を良好に充てん（接着シート中に凸部を埋め込む、又は接着シートで凹部を充填する）でき、凹凸の充てん時にチップ端部からの樹脂のはみだしが少ないことを見出した。 The inventors of the present invention indicate that the adhesive sheet having specific physical properties is an adhesive sheet satisfying heat resistance and moisture resistance, and by using the adhesive sheet, irregularities such as wiring of a substrate and wires of a semiconductor chip can be obtained. It has been found that the resin can be satisfactorily filled (the convex part is embedded in the adhesive sheet or the concave part is filled with the adhesive sheet), and the resin does not protrude from the end of the chip when the irregularity is filled.
本発明は、（１）硬化前の７０℃でのずり弾性率測定において、ひずみ量１％の貯蔵弾性率Ｇ１、ひずみ量１０％の貯蔵弾性率Ｇ１０の比Ｇ１／Ｇ１０が１．２〜１００であり、硬化前の７０℃での剪断速度０．１（ｓ−１）、ひずみ量０．４％の条件で測定した溶融粘度が１００Ｐａ・ｓ〜２５万Ｐａ・ｓであることを特徴とする接着シートに関する。 In the present invention, (1) In the shear modulus measurement at 70 ° C. before curing, the ratio G 1 / G 10 of the storage elastic modulus G 1 with a strain amount of 1% and the storage elastic modulus G 10 with a strain amount of 10% is 1 The melt viscosity is 100 Pa · s to 250,000 Pa · s measured under conditions of a shear rate of 0.1 (s −1 ) at 70 ° C. before curing and a strain amount of 0.4%. The present invention relates to an adhesive sheet.
また、本発明は、（２）熱硬化性成分及び高分子量成分を合わせて４０〜８５体積％と、フィラー１５〜６０体積％とを含む組成物を含有することを特徴とする前記（１）記載の接着シートに関する。 Moreover, this invention contains the composition which contains 40-85 volume% combining a thermosetting component and a high molecular weight component, and 15-60 volume% of fillers, (1) characterized by the above-mentioned. It relates to the adhesive sheet described.
また、本発明は、（３）樹脂１００重量部とフィラー４０〜１８０重量部とを含む樹脂組成物を含有し、前記樹脂が分子量８００以上のエポキシ樹脂を含む熱硬化性成分６０〜８５重量％と、架橋性官能基を含む重量平均分子量が１０万〜１００万で、かつＴｇが−５０〜５０℃である高分子量成分１５〜４０重量％とを含むことを特徴とする前記（１）記載の接着シートに関する。 The present invention also includes (3) a resin composition containing 100 parts by weight of a resin and 40 to 180 parts by weight of a filler, and the resin contains 60 to 85% by weight of a thermosetting component containing an epoxy resin having a molecular weight of 800 or more. And the high molecular weight component having a weight average molecular weight containing a crosslinkable functional group of 100,000 to 1,000,000 and Tg of −50 to 50 ° C. This relates to the adhesive sheet.
また、本発明は、（４）硬化前の７０℃での剪断速度０．１（ｓ−１）、ひずみ量０．４％の条件で測定したずり粘度η１と、剪断速度１００（ｓ−１）、ひずみ量０．４％の条件で測定したずり粘度η２の比η１／η２が５０以下であることを特徴とする前記（１）〜（３）のいずれか一項に記載の接着シートに関する。 The present invention also includes (4) a shear viscosity η 1 measured under conditions of a shear rate of 0.1 (s −1 ) at 70 ° C. before curing and a strain amount of 0.4%, and a shear rate of 100 (s − 1 ) The ratio η 1 / η 2 of the shear viscosity η 2 measured under the condition of 0.4% strain is 50 or less, according to any one of the above (1) to (3), This relates to the adhesive sheet.
また、本発明は、（５）硬化前の２５℃での動的粘弾性測定による貯蔵弾性率が２００〜３０００ＭＰａであり、８０℃での動的粘弾性測定による貯蔵弾性率が０．１〜１０ＭＰａである前記（１）〜（４）のいずれか一項に記載の接着シートに関する。 In the present invention, (5) the storage elastic modulus by dynamic viscoelasticity measurement at 25 ° C. before curing is 200 to 3000 MPa, and the storage elastic modulus by dynamic viscoelasticity measurement at 80 ° C. is 0.1 to 0.1 MPa. It is related with the adhesive sheet as described in any one of said (1)-(4) which is 10 MPa.
また、本発明は、（６）前記（１）〜（５）いずれか一項に記載の接着シートとダイシングテープとを貼り合わせた一体型シートに関する。 The present invention also relates to (6) an integrated sheet obtained by bonding the adhesive sheet according to any one of (1) to (5) and a dicing tape.
また、本発明は、（７）ウエハ、前記（１）〜（５）いずれか一項に記載の接着シート、ダイシングテープの順に０℃〜１２０℃で貼り合わせる工程、ウエハ、接着シート及びダンシングテープを同時に切断し、接着シートとダイシングテープ間ではく離して接着シート付き半導体チップを得る工程、前記接着シート付き半導体チップを凹凸を有する基板又は半導体チップに荷重０．００１〜１ＭＰａで接着する工程とを含む半導体装置の製造方法に関する。 Moreover, this invention is the process of bonding at 0 degreeC-120 degreeC in order of (7) wafer, the adhesive sheet as described in any one of said (1)-(5), and a dicing tape, a wafer, an adhesive sheet, and a dancing tape. A step of separating the adhesive sheet and the dicing tape to obtain a semiconductor chip with an adhesive sheet, a step of adhering the semiconductor chip with an adhesive sheet to an uneven substrate or a semiconductor chip with a load of 0.001 to 1 MPa, The present invention relates to a method for manufacturing a semiconductor device including:
また、本発明は、（８）ウエハと前記（６）に記載の一体型シートの接着シート側とを０℃〜１２０℃で貼り合わせる工程、ウエハと一体型シートを同時に切断し、一体型シートの接着シートとダイシングテープ間で剥離して接着シート付き半導体チップを得る工程、前記接着シート付き半導体チップを凹凸を有する基板または半導体チップに荷重０．００１〜１ＭＰａで接着する工程とを含む半導体装置の製造方法に関する。 The present invention also includes (8) a step of bonding the wafer and the adhesive sheet side of the integrated sheet described in (6) above at 0 ° C. to 120 ° C., cutting the wafer and the integrated sheet simultaneously, A semiconductor device comprising: a step of peeling between an adhesive sheet and a dicing tape to obtain a semiconductor chip with an adhesive sheet; and a step of bonding the semiconductor chip with an adhesive sheet to an uneven substrate or a semiconductor chip with a load of 0.001 to 1 MPa. It relates to the manufacturing method.
また、本発明は、（９）前記（７）又は（８）に記載の半導体装置の製造方法により製造した半導体装置に関する。 The present invention also relates to (9) a semiconductor device manufactured by the method for manufacturing a semiconductor device according to (7) or (8).
本発明により、配線やワイヤ等に起因する凹凸の充てん性が優れ、また、凹凸の充てん時にチップ端部からの樹脂のはみだしが少ない、さらには耐熱性や耐湿性を満足する接着シート、一体型シート、半導体装置、及び半導体装置の製造方法を提供することが可能となった。 According to the present invention, the filling of unevenness caused by wiring, wires, etc. is excellent, and the adhesive sheet that has little heat of resin from the end of the chip when filling the unevenness, and further satisfies heat resistance and moisture resistance, integrated type It has become possible to provide a sheet, a semiconductor device, and a method for manufacturing the semiconductor device.
本発明の接着シートは硬化前の７０℃でのずり弾性率測定において、ひずみ量１％の貯蔵弾性率Ｇ１、ひずみ量１０％の貯蔵弾性率Ｇ１０の比Ｇ１／Ｇ１０が１．２〜１００である。本発明において、硬化前とは未硬化または半硬化の状態をいう。 In the shear modulus measurement at 70 ° C. before curing, the adhesive sheet of the present invention has a ratio G 1 / G 10 of a storage elastic modulus G 1 with a strain amount of 1% and a storage elastic modulus G 10 with a strain amount of 10% of 1. 2-100. In the present invention, “before curing” means an uncured or semi-cured state.
接着シート付き半導体チップを凹凸を有する基板又は半導体チップに接着した場合、凹凸に近いほど接着シートにかかる剪断ひずみは大きくなり、凹凸から離れるほど剪断ひずみは小さくなる。前記Ｇ１／Ｇ１０が１．２〜１００であると、凹凸部の充てん性が向上し、半導体チップの端部では樹脂のはみだしが少なくなる。Ｇ１／Ｇ１０は好ましくは１．５〜１００、さらに好ましくは２．３〜１００である。Ｇ１／Ｇ１０が１．２未満の場合は充てん性が低下し、１００超の場合は、ひずみが大きいところのずり弾性率が極端に小さくなるため、樹脂のはみだしが多くなる。本発明における貯蔵弾性率Ｇ１及びＧ１０は、ＴＡインスツルメンツ製ＡＲＥＳを用い、ひずみ量を１％、１０％で測定することが出来る。Ｇ１及びＧ１０の値は、平行円板（直径２５ｍｍ）に厚さ１３０μｍ以上６００μｍ未満の接着シートを挟み、２５℃から７０℃まで昇温速度１０℃／分で上昇させた後、測定した７０℃におけるずり弾性率測定結果のうち、貯蔵弾性率の値である。なお、ひずみ量γは平行平板冶具による測定では、円筒状のサンプルの厚さｔｍｍ、直径２５ｍｍの場合、γ＝２５／ｔで表される。Ｇ１／Ｇ１０はフィラーの配合量や高分子量成分の分子量によりコントロールされる。例えば、Ｇ１／Ｇ１０を大きくするにはフィラーの配合量を増やしたり、高分子量成分の分子量を低くするなどして、分子の絡み合いを低減することが好ましい。Ｇ１／Ｇ１０を１．２〜１００にするには、接着シートが、樹脂１００重量部とフィラー４０〜１８０重量部とを含む樹脂組成物を含有し、前記樹脂が分子量８００以上のエポキシ樹脂を含む熱硬化性成分６０〜８５重量％と、重量平均分子量が１０万〜１００万で、かつＴｇが−５０〜５０℃である架橋性官能基を含む高分子量成分１５〜４０重量％とを含むようにすればよい。 When the semiconductor chip with an adhesive sheet is bonded to a substrate having an unevenness or a semiconductor chip, the shear strain applied to the adhesive sheet increases as it is closer to the unevenness, and the shear strain decreases as the distance from the unevenness increases. When G 1 / G 10 is 1.2 to 100, the filling property of the concavo-convex portion is improved, and the protrusion of the resin is reduced at the end portion of the semiconductor chip. G 1 / G 10 is preferably 1.5 to 100, more preferably from 2.3 to 100. When G 1 / G 10 is less than 1.2, the filling property is lowered. When G 1 / G 10 is more than 100, the shear modulus of elasticity is extremely small, so that the resin protrudes. Storage modulus G 1 and G 10 in the present invention, using a TA Instruments ARES, strain of 1%, can be measured at 10%. The values of G 1 and G 10 were measured after sandwiching an adhesive sheet having a thickness of 130 μm or more and less than 600 μm between parallel disks (diameter 25 mm) and increasing the temperature from 25 ° C. to 70 ° C. at a heating rate of 10 ° C./min. Of the shear modulus measurement results at 70 ° C., the value is the storage modulus. Note that the strain amount γ is expressed by γ = 25 / t when the cylindrical sample has a thickness tmm and a diameter of 25 mm, as measured by a parallel plate jig. G 1 / G 10 is controlled by the blending amount of the filler and the molecular weight of the high molecular weight component. For example, in order to increase G 1 / G 10 , it is preferable to reduce the molecular entanglement by increasing the blending amount of the filler or decreasing the molecular weight of the high molecular weight component. The G 1 / G 10 To 1.2 to 100, the adhesive sheet contains a resin composition comprising 100 parts by weight of the resin and the filler 40 to 180 parts by weight, the resin molecular weight of 800 or more epoxy resins 60 to 85% by weight of a thermosetting component containing 15 to 40% by weight of a high molecular weight component containing a crosslinkable functional group having a weight average molecular weight of 100,000 to 1,000,000 and Tg of −50 to 50 ° C. It should be included.
本発明の接着シートは、硬化前の７０℃での剪断速度０．１（ｓ−１）、ひずみ量０．４％の条件で測定した溶融粘度が１００Ｐａ・ｓ〜２５万Ｐａ・ｓ、好ましくは３００Ｐａ・ｓ〜２０万Ｐａ・ｓ、さらに好ましくは５００Ｐａ・ｓ〜１０万Ｐａ・ｓである。溶融粘度を上記範囲に設定することにより凹凸部を良好に充填でき、チップ端部からの樹脂のはみ出しを少なくすることができる。溶融粘度が１００Ｐａ・ｓ未満の場合は、流動性が高くなり過ぎ、チップ端部から樹脂のはみだしが大きくなってしまう。一方、溶融粘度が２５万Ｐａ・ｓ超の場合は、凹凸の充てん性が低下してしまう。溶融粘度を１００Ｐａ・ｓ〜２５万Ｐａ・ｓにするには、接着シートが、樹脂１００重量部とフィラー４０〜１８０重量部とを含む樹脂組成物を含有し、前記樹脂が分子量８００以上のエポキシ樹脂を含む熱硬化性成分６０〜８５重量％と、重量平均分子量が１０万〜１００万で、かつＴｇが−５０〜５０℃である架橋性官能基を含む高分子量成分１５〜４０重量％とを含むようにすればよい。 The adhesive sheet of the present invention has a melt viscosity of 100 Pa · s to 250,000 Pa · s, preferably measured at a shear rate of 0.1 (s −1 ) at 70 ° C. before curing and a strain amount of 0.4%. Is 300 Pa · s to 200,000 Pa · s, more preferably 500 Pa · s to 100,000 Pa · s. By setting the melt viscosity within the above range, the uneven portions can be satisfactorily filled, and the protrusion of the resin from the chip end can be reduced. When the melt viscosity is less than 100 Pa · s, the fluidity becomes too high, and the protrusion of the resin from the end of the chip becomes large. On the other hand, when the melt viscosity is more than 250,000 Pa · s, the filling property of the unevenness is lowered. In order to obtain a melt viscosity of 100 Pa · s to 250,000 Pa · s, the adhesive sheet contains a resin composition containing 100 parts by weight of resin and 40 to 180 parts by weight of filler, and the resin has an epoxy having a molecular weight of 800 or more. 60 to 85% by weight of a thermosetting component including a resin, 15 to 40% by weight of a high molecular weight component including a crosslinkable functional group having a weight average molecular weight of 100,000 to 1,000,000 and Tg of −50 to 50 ° C. Should be included.
溶融粘度は、平行平板プレート法によるずり弾性率の測定装置を用いることにより測定することができ、例えば、硬化前の接着シートをＴＡインスツルメンツ製ＡＲＥＳを用いて、７０℃、ひずみ量０．４（％）、剪断速度０．１（ｓ−１）の条件で測定することができる。 The melt viscosity can be measured by using a shear modulus measurement apparatus based on a parallel plate method. For example, an adhesive sheet before curing is prepared by using ARES manufactured by TA Instruments at 70 ° C. and a strain amount of 0.4 ( %) And a shear rate of 0.1 (s −1 ).
本発明の接着シートは、硬化前の７０℃での剪断速度０．１（ｓ−１）、ひずみ量０．４％の条件で測定したずり粘度η１と、剪断速度１００（ｓ−１）、ひずみ量０．４％の条件で測定したずり粘度η２との比η１／η２が５０以下であることが好ましく、４５以下であることがより好ましく、４０以下であることがさらにより好ましい。前記η１／η２が５０超の場合、中空に固定された極細ワイヤのように凹凸周辺部のみに高い剪断速度がかかり、溶融粘度が低下しチップ端部から樹脂がはみ出してしまう傾向がある。 The adhesive sheet of the present invention has a shear viscosity η 1 measured at a shear rate of 0.1 (s −1 ) at 70 ° C. before curing and a strain amount of 0.4%, and a shear rate of 100 (s −1 ). The ratio η 1 / η 2 to the shear viscosity η 2 measured under a strain amount of 0.4% is preferably 50 or less, more preferably 45 or less, and even more preferably 40 or less. preferable. When the η 1 / η 2 is more than 50, a high shear rate is applied only to the periphery of the irregularities like an ultrafine wire fixed in a hollow, and the melt viscosity tends to decrease and the resin tends to protrude from the end of the chip. .
ずり粘度η１とη２は、例えば、ＴＡインスツルメンツ製ＡＲＥＳを用いて、ひずみ量０．４（％）、剪断速度０．１（ｓ−１）または剪断速度１００（ｓ−１）における粘度の周波数依存性を測定することにより求めることができる。 The shear viscosities η 1 and η 2 are the viscosity at a strain rate of 0.4 (%), a shear rate of 0.1 (s −1 ), or a shear rate of 100 (s −1 ), for example, using ARES manufactured by TA Instruments. It can be obtained by measuring the frequency dependence.
η１／η２の値は、フィラーの配合量、フィラーの平均粒径などで調整することが可能である。η１／η２を５０以下にするには、好ましくは平均粒径が０．１〜５μｍ、さらに好ましくは０．３〜３μｍ以下のフィラーを、接着シートに１０〜７０重量％添加する。そして、最も好ましくは、平均粒径１μｍ以下のフィラーを２５〜５５重量％添加する。フィラーの平均粒径を小さくするとη１／η２は大きくなるが、フィラーの平均粒径が０．１μｍ未満の場合は溶融粘度が上昇しすぎる傾向にある。また、フィラーの平均粒径が５μｍ超である場合はη１／η２が小さくなり、充てん性が悪化する傾向にある。
本発明の接着シートは、硬化前（Ｂステージ状態）の２５℃での動的粘弾性測定による貯蔵弾性率が２００〜３０００ＭＰａであると、ダイシング性が優れる点で好ましく、５００〜２０００ＭＰａであるとダイシング性に優れ、かつウエハとの密着性が優れる点でより好ましい。また、硬化前（Ｂステージ状態）の８０℃での動的粘弾性測定による貯蔵弾性率が０．１〜１０ＭＰａであると、８０℃でウエハにラミネートが可能である点で好ましく、０．５〜５ＭＰａであると、特にウエハへの密着性が高い点でより好ましい。
The value of η 1 / η 2 can be adjusted by the blending amount of filler, the average particle size of filler, and the like. In order to reduce η 1 / η 2 to 50 or less, a filler having an average particle diameter of preferably 0.1 to 5 μm, more preferably 0.3 to 3 μm is added to the adhesive sheet in an amount of 10 to 70% by weight. Most preferably, a filler having an average particle diameter of 1 μm or less is added in an amount of 25 to 55% by weight. When the average particle size of the filler is reduced, η 1 / η 2 increases, but when the average particle size of the filler is less than 0.1 μm, the melt viscosity tends to increase too much. Moreover, when the average particle diameter of a filler is more than 5 micrometers, (eta) 1 / (eta) 2 becomes small and it exists in the tendency for filling property to deteriorate.
The adhesive sheet of the present invention preferably has a storage elastic modulus of 200 to 3000 MPa as measured by dynamic viscoelasticity at 25 ° C. before curing (B stage state) in terms of excellent dicing properties, and is 500 to 2000 MPa. It is more preferable in terms of excellent dicing properties and excellent adhesion to the wafer. Further, when the storage elastic modulus by dynamic viscoelasticity measurement at 80 ° C. before curing (B stage state) is 0.1 to 10 MPa, it is preferable in that a wafer can be laminated at 80 ° C., 0.5 It is more preferable that it is ˜5 MPa, particularly in terms of high adhesion to the wafer.
また、本発明の接着シートは、硬化後（Ｃステージ状態）の１７０℃での動的粘弾性測定による貯蔵弾性率は、良好なワイヤボンディング性を得るために好ましくは２０〜６００ＭＰａであり、より好ましくは４０〜６００ＭＰａ、さらにより好ましくは４０〜４００ＭＰａである。 In addition, the adhesive sheet of the present invention has a storage elastic modulus by dynamic viscoelasticity measurement at 170 ° C. after curing (C stage state), preferably 20 to 600 MPa in order to obtain good wire bonding properties. Preferably it is 40-600 MPa, More preferably, it is 40-400 MPa.
本発明の接着シートは、２５℃におけるタック強度が８ｇｆ〜３０ｇｆであることが好ましく、４０℃におけるタック強度が４０ｇｆ〜８０ｇｆであることがより好ましい。２５℃におけるタック強度が８ｇｆ未満である場合は、ウエハと接着シート間で剥離が生じやすい傾向にあり、３０ｇｆ超である場合は、接着シートとダイシングテープ間で剥離し難く半導体チップが破損しやすい傾向にある。また４０℃におけるタック強度が４０ｇｆ未満である場合は、接着シート付き半導体チップを凹凸を有する基板又は半導体チップに接着した後に剥離し易い傾向にあり、８０ｇｆ超である場合は、ウエハと接着シートとダイシングテープを張り合わせた状態で１か月以上の長期保管した場合に、接着シートとダイシングテープ間で剥離し難くなる傾向にある。 The adhesive sheet of the present invention preferably has a tack strength at 25 ° C. of 8 gf to 30 gf, and more preferably a tack strength at 40 ° C. of 40 gf to 80 gf. When the tack strength at 25 ° C. is less than 8 gf, peeling tends to occur between the wafer and the adhesive sheet, and when it exceeds 30 gf, it is difficult to peel between the adhesive sheet and the dicing tape, and the semiconductor chip is easily damaged. There is a tendency. Further, when the tack strength at 40 ° C. is less than 40 gf, it tends to be peeled off after the semiconductor chip with an adhesive sheet is bonded to a substrate having unevenness or a semiconductor chip, and when it exceeds 80 gf, When stored for a long period of one month or longer with the dicing tape attached, it tends to be difficult to peel between the adhesive sheet and the dicing tape.
なお、タック強度は、例えば、Ｂステージ状態の接着シートの塗工した上面のタック強度を、レスカ株式会社製プローブタッキング試験機を用いて、ＪＩＳＺ０２３７−１９９１に記載の方法（プローブ直径５．１ｍｍ、引き剥がし速度１０ｍｍ／ｓ、接触荷重１００ｇｆ／ｃｍ２、接触時間１ｓ）により、２５℃、４０℃で測定した値である。 In addition, the tack strength is, for example, the tack strength of the upper surface coated with an adhesive sheet in a B-stage state using a probe tacking tester manufactured by Reska Co., Ltd. according to the method described in JISZ0237-1991 (probe diameter 5.1 mm, It is a value measured at 25 ° C. and 40 ° C. with a peeling speed of 10 mm / s, a contact load of 100 gf / cm 2 , and a contact time of 1 s).
なお、本発明の接着シートは配線やワイヤに起因する凹凸の充てんのみだけでなく、種々の形状の凹凸部の充てんでも同様の効果を有する。本発明の接着シートの充填性とバリア性は、高さ／幅（アスペクト比）が１以上である凸部または中空配線の充てんに使用する場合に顕著な効果を発揮し、アスペクト比が１．５以上の凸部の充填に使用する場合に特に顕著な効果を発揮する。アスペクト比が大きい凸部の場合、充てんがより困難になるため、溶融粘度を低減すると、接着シート端部での樹脂のはみだしが大きくなり、端部の端子を汚染するなどの問題が生じていた。なお、高さ／幅は凸部の最大幅、基板からの最大高さを測定して、計算する。この場合の幅は基板から１０μｍ以上高い部分での最大値を取る。 The adhesive sheet of the present invention has the same effect not only when filling irregularities due to wiring and wires, but also filling irregularities with various shapes. The filling property and barrier property of the adhesive sheet of the present invention exert a remarkable effect when used for filling a convex portion or a hollow wiring having a height / width (aspect ratio) of 1 or more. This is particularly effective when used for filling 5 or more convex portions. In the case of a convex portion with a large aspect ratio, filling becomes more difficult, so if the melt viscosity is reduced, the protrusion of the resin at the edge of the adhesive sheet increases, causing problems such as contamination of the terminal at the edge . The height / width is calculated by measuring the maximum width of the convex portion and the maximum height from the substrate. In this case, the width takes a maximum value at a portion higher than the substrate by 10 μm or more.
また、本発明の接着シートは熱硬化性成分及び高分子量成分を合わせて４０〜８５体積％と、フィラーを１５〜６０体積％含む組成物を含有することが好ましい。フィラー含量が１５体積％未満である場合は、ダイシング時に半導体チップにクラックが多発する傾向にあり、６０体積％超である場合は、接着シートの弾性率が高くなり過ぎ、反りや剥離が生じる傾向にある。なお、本発明において、熱硬化性成分には熱硬化性樹脂と樹脂硬化剤が含まれる。 The adhesive sheet of the present invention preferably contains a composition containing 40 to 85% by volume of the thermosetting component and the high molecular weight component and 15 to 60% by volume of the filler. When the filler content is less than 15% by volume, cracks tend to occur frequently in the semiconductor chip during dicing, and when it exceeds 60% by volume, the elastic modulus of the adhesive sheet becomes too high, and warping and peeling tend to occur. It is in. In the present invention, the thermosetting component includes a thermosetting resin and a resin curing agent.
また、本発明の接着シートは、樹脂１００重量部とフィラー４０〜１８０重量部とを含む樹脂組成物を含有し、前記樹脂が分子量８００以上のエポキシ樹脂を含む熱硬化性成分６０〜８５重量％と、架橋性官能基を含む重量平均分子量が１０万〜１００万で、かつＴｇが−５０〜５０℃である高分子量成分１５〜４０重量％とを含むことが好ましく、所望のタック強度を有しシート状での取扱い性が良好であることから、高分子量成分、熱硬化性成分及びフィラーの他に、硬化促進剤、触媒、添加剤、カップリング剤等を含んでも良い。なお、フィラーは無機フィラーが好ましい。 The adhesive sheet of the present invention contains a resin composition containing 100 parts by weight of resin and 40 to 180 parts by weight of filler, and the resin contains 60 to 85% by weight of a thermosetting component containing an epoxy resin having a molecular weight of 800 or more. And a high molecular weight component having a weight average molecular weight containing a crosslinkable functional group of 100,000 to 1,000,000 and a Tg of −50 to 50 ° C., and having a desired tack strength. In addition, since the handleability in a sheet form is good, a curing accelerator, a catalyst, an additive, a coupling agent and the like may be included in addition to the high molecular weight component, the thermosetting component and the filler. The filler is preferably an inorganic filler.
本発明の接着シートは樹脂及びフィラーを含む樹脂組成物を含有する。樹脂１００重量部に対して、フィラーを好ましくは４０〜１８０重量部、より好ましくは６０〜１２０重量部配合する。フィラーの配合量が１８０重量部超である場合は、流動性が極端に低下する傾向にある。前記樹脂は熱硬化性成分と高分子量成分とを含んでなる。熱硬化性成分と高分子量成分の含有量は、熱硬化性成分が６０〜８５重量％、高分子量成分１５〜４０重量％であることが好ましい。熱硬化性成分が６０重量％未満である場合は粘度が高く、流動性に劣る傾向にあり、逆に８５重量％超では流動性が高すぎる傾向にある。
本発明において用いられる高分子量成分としては、エポキシ基、アルコール性水酸基、フェノール性水酸基、カルボキシル基などの架橋性官能基を有するポリイミド樹脂、（メタ）アクリル樹脂、ウレタン樹脂、ポリフェニレンエーテル樹脂、ポリエーテルイミド樹脂、フェノキシ樹脂、変性ポリフェニレンエーテル樹脂等が挙げられるが、これらに限定されるものではない。高分子量成分として、例えば、グリシジルアクリレートまたはグリシジルメタクリレートなどの官能性モノマと（メタ）アクリル酸モノマを含有するモノマを重合して得た、エポキシ基含有（メタ）アクリル共重合体などが好ましい。エポキシ基含有（メタ）アクリル共重合体としては、例えば、エポキシ基含有（メタ）アクリル酸エステル共重合体、エポキシ基含有アクリルゴムなどを使用することができ、エポキシ基含有アクリルゴムがより好ましい。アクリルゴムは、アクリル酸エステルを主成分とし、主として、ブチルアクリレートとアクリロニトリルなどの共重合体や、エチルアクリレートとアクリロニトリルなどの共重合体などからなるゴムである。
The adhesive sheet of the present invention contains a resin composition containing a resin and a filler. The filler is preferably blended in an amount of 40 to 180 parts by weight, more preferably 60 to 120 parts by weight with respect to 100 parts by weight of the resin. When the amount of the filler is more than 180 parts by weight, the fluidity tends to be extremely lowered. The resin comprises a thermosetting component and a high molecular weight component. As for the content of the thermosetting component and the high molecular weight component, the thermosetting component is preferably 60 to 85% by weight and the high molecular weight component is 15 to 40% by weight. When the thermosetting component is less than 60% by weight, the viscosity tends to be high and the fluidity tends to be inferior. Conversely, when it exceeds 85% by weight, the fluidity tends to be too high.
Examples of the high molecular weight component used in the present invention include polyimide resins having crosslinkable functional groups such as epoxy groups, alcoholic hydroxyl groups, phenolic hydroxyl groups, and carboxyl groups, (meth) acrylic resins, urethane resins, polyphenylene ether resins, and polyethers. Examples thereof include, but are not limited to, imide resins, phenoxy resins, and modified polyphenylene ether resins. As the high molecular weight component, for example, an epoxy group-containing (meth) acrylic copolymer obtained by polymerizing a functional monomer such as glycidyl acrylate or glycidyl methacrylate and a monomer containing a (meth) acrylic acid monomer is preferable. As an epoxy group containing (meth) acrylic copolymer, an epoxy group containing (meth) acrylic acid ester copolymer, an epoxy group containing acrylic rubber, etc. can be used, for example, and an epoxy group containing acrylic rubber is more preferable. Acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like.
高分子量成分の重量平均分子量は、好ましくは１０万〜１００万であり、より好ましくは２０万〜９０万である。高分子量成分の重量平均分子量が１０万未満である場合は、接着シートの耐熱性が低下する傾向にあり、逆に１００万を超えると接着シートのフローが低下する傾向にある。なお、重量平均分子量は、ゲルパーミエーションクロマトグラフィー法（ＧＰＣ）で標準ポリスチレンによる検量線を用いたポリスチレン換算値である。 The weight average molecular weight of the high molecular weight component is preferably 100,000 to 1,000,000, more preferably 200,000 to 900,000. When the weight average molecular weight of the high molecular weight component is less than 100,000, the heat resistance of the adhesive sheet tends to decrease, and conversely, when it exceeds 1,000,000, the flow of the adhesive sheet tends to decrease. In addition, a weight average molecular weight is a polystyrene conversion value using the calibration curve by a standard polystyrene by the gel permeation chromatography method (GPC).
高分子量成分のＴｇは、好ましくは−５０〜５０℃、より好ましくは−３０〜２０である。高分子量成分のＴｇが−５０℃未満である場合は、タックが大きすぎるためハンドリングがし難い傾向にあり、逆に５０℃超の場合は、タックが小さすぎるため仮接着などがし難くなる傾向にある。 The Tg of the high molecular weight component is preferably -50 to 50 ° C, more preferably -30 to 20. If the Tg of the high molecular weight component is less than -50 ° C, the tack is too large and handling tends to be difficult. Conversely, if it exceeds 50 ° C, the tack is too small and temporary adhesion tends to be difficult. It is in.
本発明において、ウエハダイシング時に接着シートが切断しやすく樹脂くずが発生し難い点、また耐熱性が高い点で、Ｔｇが−２０℃〜４０℃で重量平均分子量が１０万〜９０万の高分子量成分が好ましく、Ｔｇが−１０℃〜４０℃で分子量が２０万〜８５万の高分子量成分がより好ましい。 In the present invention, the adhesive sheet is easily cut at the time of wafer dicing, resin waste is not easily generated, and the heat resistance is high, so that the Tg is −20 ° C. to 40 ° C. and the weight average molecular weight is 100,000 to 900,000. A component is preferable, and a high molecular weight component having a Tg of −10 ° C. to 40 ° C. and a molecular weight of 200,000 to 850,000 is more preferable.
本発明において用いられる熱硬化性成分としては、半導体チップを実装する場合に要求される耐熱性および耐湿性を有するエポキシ樹脂を含むことが好ましい。なお、本発明において、「エポキシ樹脂を主成分とする熱硬化性成分」には、エポキシ樹脂硬化剤も含まれるものとする。エポキシ樹脂は、硬化して接着作用を有するものであれば特に限定されない。ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂などの二官能エポキシ樹脂、フェノールノボラック型エポキシ樹脂やクレゾールノボラック型エポキシ樹脂などのノボラック型エポキシ樹脂などを使用することができる。また、多官能エポキシ樹脂、グリシジルアミン型エポキシ樹脂、複素環含有エポキシ樹脂または脂環式エポキシ樹脂など、一般に知られているものを適用することができる。 The thermosetting component used in the present invention preferably includes an epoxy resin having heat resistance and moisture resistance required for mounting a semiconductor chip. In the present invention, the “thermosetting component mainly composed of epoxy resin” includes an epoxy resin curing agent. The epoxy resin is not particularly limited as long as it is cured and has an adhesive action. Bifunctional epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, and bisphenol S type epoxy resin, novolac type epoxy resins such as phenol novolac type epoxy resin and cresol novolak type epoxy resin, and the like can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.
特にＢステージ状態での接着シートの可撓性が高い点で、エポキシ樹脂の分子量は１０００以下であることが好ましく、さらに好ましくは５００以下である。また、可撓性に優れる分子量５００以下のビスフェノールＡ型又はビスフェノールＦ型エポキシ樹脂５０〜９０重量％と、硬化物の耐熱性に優れる分子量が８００〜３０００の多官能エポキシ樹脂１０〜５０重量％とを併用することが好ましい。 In particular, the molecular weight of the epoxy resin is preferably 1000 or less, and more preferably 500 or less, in view of the high flexibility of the adhesive sheet in the B-stage state. Further, a bisphenol A type or bisphenol F type epoxy resin having a molecular weight of 500 or less excellent in flexibility and 50 to 90% by weight of a polyfunctional epoxy resin having a molecular weight of 800 to 3000 excellent in heat resistance of the cured product, and It is preferable to use together.
エポキシ樹脂硬化剤としては、通常用いられている公知の硬化剤を使用することができ、例えば、アミン類、ポリアミド、酸無水物、ポリスルフィド、三フッ化ホウ素、ビスフェノールＡ、ビスフェノールＦ、ビスフェノールＳのようなフェノール性水酸基を１分子中に２個以上有するビスフェノール類、フェノールノボラック樹脂、ビスフェノールＡノボラック樹脂又はクレゾールノボラック樹脂等のフェノール樹脂などが挙げられる。 As the epoxy resin curing agent, known curing agents that are usually used can be used. For example, amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, and bisphenol S can be used. Examples thereof include bisphenols having two or more such phenolic hydroxyl groups in one molecule, phenol resins such as phenol novolac resins, bisphenol A novolac resins, and cresol novolac resins.
本発明において用いられるフィラーとしては無機フィラーが好ましく、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、アルミナ、窒化アルミニウム、ほう酸アルミウイスカ、窒化ホウ素、結晶性シリカ、非晶性シリカ、アンチモン酸化物などが挙げられる。熱伝導性向上のためには、アルミナ、窒化アルミニウム、窒化ホウ素、結晶性シリカ、非晶性シリカ等が好ましい。溶融粘度の調整やチクソトロピック性の付与の目的には、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、アルミナ、結晶性シリカ、非晶性シリカ等が好ましい。また、ダイシング性を向上させるためにはアルミナ、シリカが好ましい。フィラーの平均粒径は、０．０１μｍ未満であると樹脂組成物の粘度が大幅に上昇する傾向があり、また平均粒径が５μｍを超えると接着シートの薄膜化が困難となり、接着シート表面の平滑性を保つことが難しくなる傾向がある。したがって、接着シートの流動性と表面平滑性の点から、フィラーの平均粒径は、０．０１〜５μｍが好ましい。さらに、接着シートの流動性が優れる点で、フィラーの平均粒径の下限としては、０．１μｍがより好ましく、０．３μｍが特に好ましい。また表面平滑性の点で、フィラーの平均粒径の上限としては、３μｍがより好ましく、１μｍが特に好ましい。 The filler used in the present invention is preferably an inorganic filler, such as aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate. Examples include whisker, boron nitride, crystalline silica, amorphous silica, and antimony oxide. In order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, non-crystalline silica Crystalline silica and the like are preferred. In order to improve dicing properties, alumina and silica are preferable. If the average particle size of the filler is less than 0.01 μm, the viscosity of the resin composition tends to increase significantly. If the average particle size exceeds 5 μm, it is difficult to make the adhesive sheet thin, It tends to be difficult to maintain smoothness. Therefore, the average particle diameter of the filler is preferably 0.01 to 5 μm from the viewpoint of fluidity and surface smoothness of the adhesive sheet. Furthermore, the lower limit of the average particle size of the filler is more preferably 0.1 μm, and particularly preferably 0.3 μm, in terms of excellent fluidity of the adhesive sheet. In terms of surface smoothness, the upper limit of the average particle size of the filler is more preferably 3 μm, and particularly preferably 1 μm.
なお、本発明においては、レーザー回折式粒度分布測定装置（日機装製マイクロトラック）を用いてフィラーの平均粒径を測定した。具体的には、フィラー０．１〜１．０ｇを秤取り、超音波により分散した後、粒度分布を測定し、その分布での累積重量が５０％となる粒子径を平均粒径とした。 In the present invention, the average particle size of the filler was measured using a laser diffraction type particle size distribution measuring device (Nikkiso Microtrack). Specifically, 0.1 to 1.0 g of filler was weighed and dispersed by ultrasonic waves, then the particle size distribution was measured, and the particle diameter at which the cumulative weight in the distribution was 50% was taken as the average particle diameter.
フィラーの比表面積に関しても、フィラーの平均粒径と同様に、接着シートの流動性と表面平滑性の点から２〜２００ｍ２／ｇが好ましく、さらに流動性の点から比表面積の上限は５０ｍ２／ｇがより好ましく、１０ｍ２／ｇが特に好ましい。 Regarding the specific surface area of the filler, similarly to the average particle diameter of the filler, 2 to 200 m 2 / g is preferable from the viewpoint of fluidity and surface smoothness of the adhesive sheet, and the upper limit of the specific surface area is 50 m 2 from the viewpoint of fluidity. / G is more preferable, and 10 m 2 / g is particularly preferable.
なお、本発明において、比表面積（ＢＥＴ比表面積）は、ブルナウアー・エメット・テーラー（Ｂｒｕｎａｕｅｒ−Ｅｍｍｅｔｔ−Ｔｅｌｌｅｒ）式により、フィラーに窒素を吸着させてその表面積を測定した値であり、市販されているＢＥＴ装置により測定できる。 In the present invention, the specific surface area (BET specific surface area) is a value obtained by adsorbing nitrogen to a filler and measuring the surface area according to the Brunauer-Emmett-Teller equation, and is commercially available. It can be measured with a BET device.
本発明の接着シートは、例えば、前記高分子量成分、エポキシ樹脂を主成分とする熱硬化性成分、フィラー、及び他の成分を有機溶媒中で混合、混練してワニスを調製した後、基材フィルム上に上記ワニスの層を形成させ、加熱乾燥した後、基材フィルムを除去して得ることができる。上記の混合、混練は、通常の撹拌機、らいかい機、三本ロール、ボールミル等の分散機を適宜、組み合わせて行うことができる。上記の加熱乾燥の条件は、使用した有機溶媒が充分に揮散する条件であれば特に制限はないが、通常６０℃〜２００℃で、０．１〜９０分間加熱して行う。 The adhesive sheet of the present invention is prepared, for example, by preparing a varnish by mixing and kneading the high molecular weight component, a thermosetting component mainly composed of an epoxy resin, a filler, and other components in an organic solvent. After the varnish layer is formed on the film and dried by heating, it can be obtained by removing the base film. The above mixing and kneading can be carried out by appropriately combining dispersers such as a normal stirrer, a raking machine, a triple roll, and a ball mill. The heating and drying conditions are not particularly limited as long as the used organic solvent is sufficiently volatilized, but the heating is usually performed at 60 to 200 ° C. for 0.1 to 90 minutes.
上記接着シートの製造における上記ワニスの調製に用いる有機溶媒、即ち接着シート調製後の残存揮発分は、接着シートを構成する成分を均一に溶解、混練又は分散できるものであれば制限はなく、従来公知のものを使用することができる。このような溶剤としては、例えば、ジメチルホルムアミド、ジメチルアセトアミド、Ｎ―メチルピロリドン、アセトン、メチルエチルケトン、シクロヘキサノンなどのケトン系溶媒、トルエン、キシレン等が挙げられる。乾燥速度が速く、価格が安い点でメチルエチルケトン、シクロヘキサノンなどを使用することが好ましい。 The organic solvent used for the preparation of the varnish in the production of the adhesive sheet, that is, the residual volatile content after preparation of the adhesive sheet is not limited as long as it can uniformly dissolve, knead or disperse the components constituting the adhesive sheet. A well-known thing can be used. Examples of such a solvent include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.
有機溶媒の使用量は、接着シート調製後の残存揮発分が全重量基準で０．０１〜３重量％であれば特に制限はないが、耐熱信頼性の観点からは全重量基準で０．０１〜２重量％が好ましく、全重量基準で０．０１〜１．５重量％がさらに好ましい。 The amount of the organic solvent used is not particularly limited as long as the residual volatile content after preparation of the adhesive sheet is 0.01 to 3% by weight based on the total weight, but from the viewpoint of heat resistance reliability, 0.01% based on the total weight. ˜2% by weight is preferred, and 0.01 to 1.5% by weight based on the total weight is more preferred.
接着シートの膜厚は、基板の配線回路や下層の半導体チップに付設された金ワイヤ等の凹凸を充てん可能とするため、１０〜１００μｍとすることが好ましい。接着シートの膜厚が１０μｍより薄い場合は、応力緩和効果や接着性が乏しくなる傾向があり、逆に１００μｍより厚いと経済的でなくなる上に、半導体装置の小型化の要求に応えられない可能性がある。なお、接着性が高く、また、半導体装置を薄型化できる点で、接着シートの膜厚はより好ましくは２０〜１００μｍ、さらにより好ましくは４０〜８０μｍである。 The film thickness of the adhesive sheet is preferably 10 to 100 μm in order to be able to fill irregularities such as a gold wire attached to the wiring circuit of the substrate and the semiconductor chip in the lower layer. If the thickness of the adhesive sheet is less than 10 μm, the stress relaxation effect and adhesiveness tend to be poor. Conversely, if the thickness is greater than 100 μm, it is not economical and the demand for downsizing of the semiconductor device may not be met. There is sex. In addition, the film thickness of the adhesive sheet is more preferably 20 to 100 μm, and even more preferably 40 to 80 μm, in terms of high adhesiveness and the ability to reduce the thickness of the semiconductor device.
本発明の接着シートを多層構造を有する多層接着シートとして用いても良く、例えば、上述した接着シートを２枚以上ラミネートしたもの、本発明の接着シートとそれ以外の接着シートを複数ラミネートしたものとして用いても良い。 The adhesive sheet of the present invention may be used as a multilayer adhesive sheet having a multilayer structure. For example, it is assumed that two or more of the above-mentioned adhesive sheets are laminated, or a laminate of the adhesive sheet of the present invention and other adhesive sheets. It may be used.
また、本発明の接着シートは、それ自体で用いても構わないが、一実施態様として、本発明の接着シートと従来公知のダイシングテープを張り合わせた一体型シートとして用いることもできる。この場合、ウエハへのラミネート工程が一回で済む点で、作業の効率化が可能である。この際、接着シートを予めウエハ形状に形成することが好ましい。ウエハ形状に形成する方法としては、予め別のフィルム上にワニスを塗工、乾燥しフィルム状接着剤を形成し、これをウエハ形状に打ち抜き加工する方法が挙げられる。 The adhesive sheet of the present invention may be used by itself, but as an embodiment, it can also be used as an integrated sheet in which the adhesive sheet of the present invention and a conventionally known dicing tape are bonded together. In this case, it is possible to increase the efficiency of the operation in that the laminating process on the wafer is performed only once. At this time, it is preferable to previously form the adhesive sheet into a wafer shape. Examples of the method for forming into a wafer shape include a method in which a varnish is applied in advance on another film and dried to form a film-like adhesive, which is then punched into a wafer shape.
本発明に使用するダイシングテープとしては、例えば、ポリテトラフルオロエチレンフィルム、ポリエチレンテレフタレートフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリイミドフィルムなどのプラスチックフィルム等が挙げられる。また、必要に応じてプライマー塗布、ＵＶ処理、コロナ放電処理、研磨処理、エッチング処理等の表面処理を行っても良い。ダイシングテープは粘着性を有することが好ましく、上述のプラスチックフィルムに粘着性を付与したものを用いても良いし、上述のプラスチックフィルムの片面に粘着剤層を設けても良い。これは、樹脂組成物において特に液状成分の比率、高分子量成分のＴｇを調整することによって得られる適度なタック強度を有する樹脂組成物を塗布乾燥することで形成可能である。 Examples of the dicing tape used in the present invention include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. Further, surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment and etching treatment may be performed as necessary. The dicing tape preferably has adhesiveness, and the above-mentioned plastic film provided with adhesiveness may be used, or an adhesive layer may be provided on one side of the above-mentioned plastic film. This can be formed by applying and drying a resin composition having an appropriate tack strength obtained by adjusting the ratio of the liquid component and the Tg of the high molecular weight component in the resin composition.
また、接着シートを半導体装置を製造する際に用いた場合、ダイシング時には半導体チップが飛散しない粘着力を有し、その後ピックアップ時にはダイシングテープから接着シート付き半導体チップを剥離することが望まれる。たとえば、接着シートの粘着性が高すぎるとピックアップが困難になることがある。そのため、適宜、接着シートのタック強度を調節することが好ましく、その方法としては、接着シートの室温におけるフローを上昇させることにより、粘着強度及びタック強度も上昇する傾向があり、フローを低下させれば粘着強度及びタック強度も低下する傾向があることを利用すればよい。例えば、フローを上昇させる方法としては、可塑剤の含有量を増加する、粘着付与剤の含有量を増加する等の方法がある。逆にフローを低下させる方法としては、前記可塑剤、粘着付与剤の含有量を減らせばよい。前記可塑剤としては、例えば、単官能のアクリルモノマー、単官能エポキシ樹脂、液状エポキシ樹脂、アクリル系樹脂、エポキシ系のいわゆる希釈剤等が挙げられる。 Further, when the adhesive sheet is used in manufacturing a semiconductor device, it is desired that the semiconductor chip has an adhesive force that does not scatter during dicing, and the semiconductor chip with the adhesive sheet is peeled off from the dicing tape after picking up. For example, if the adhesive sheet is too sticky, picking up may be difficult. For this reason, it is preferable to appropriately adjust the tack strength of the adhesive sheet. As a method for this, the adhesive strength and tack strength tend to increase by increasing the flow of the adhesive sheet at room temperature, and the flow can be reduced. For example, it may be used that the adhesive strength and tack strength tend to decrease. For example, as a method for increasing the flow, there are methods such as increasing the content of the plasticizer and increasing the content of the tackifier. Conversely, as a method of reducing the flow, the content of the plasticizer and tackifier may be reduced. Examples of the plasticizer include monofunctional acrylic monomers, monofunctional epoxy resins, liquid epoxy resins, acrylic resins, and epoxy-based so-called diluents.
ダイシングテープ上に接着シートを積層する方法としては、印刷のほか、予め作成した接着シートをダイシングテープ上にプレス、ホットロールラミネートする方法が挙げられるが、連続的に製造でき、効率が良い点でホットロールラミネートする方法が好ましい。 As a method of laminating the adhesive sheet on the dicing tape, in addition to printing, there is a method of pressing and hot roll laminating a pre-made adhesive sheet on the dicing tape, but it can be manufactured continuously and is efficient. A hot roll laminating method is preferred.
尚、ダイシングテープの膜厚は、特に制限はなく、接着シートの膜厚やダイシングテープ一体型シートの用途によって適宜、当業者の知識に基づいて定められるものであるが、経済性がよく、フィルムの取扱い性が良い点で６０〜１５０μｍ、好ましくは７０〜１３０μｍである。 The film thickness of the dicing tape is not particularly limited, and is determined based on the knowledge of those skilled in the art as appropriate depending on the thickness of the adhesive sheet and the application of the dicing tape-integrated sheet. Is 60 to 150 μm, preferably 70 to 130 μm, from the viewpoint of good handleability.
本発明の接着シートは、好ましくは半導体装置の製造に用いられ、より好ましくはウエハ、接着シート及びダイシングテープの順に０℃〜１２０℃で貼り合わせる工程、ウエハ、接着シート及びダイシングテープを同時に切断し、接着シートとダイシングテープ間で剥離して接着シート付き半導体チップを得る工程、前記接着シート付き半導体チップを凹凸を有する基板又は半導体チップに荷重０．００１〜１ＭＰａで接着する工程とを含む半導体装置の製造に用いられる。 The adhesive sheet of the present invention is preferably used for production of a semiconductor device, more preferably a step of laminating a wafer, an adhesive sheet and a dicing tape in the order of 0 ° C. to 120 ° C., and simultaneously cutting the wafer, the adhesive sheet and the dicing tape. A semiconductor device including a step of peeling between an adhesive sheet and a dicing tape to obtain a semiconductor chip with an adhesive sheet, and a step of adhering the semiconductor chip with an adhesive sheet to an uneven substrate or a semiconductor chip with a load of 0.001 to 1 MPa. Used in the manufacture of
本発明において、ウエハとしては、単結晶シリコンの他、多結晶シリコン、各種セラミック、ガリウム砒素などの化合物半導体などが使用される。 In the present invention, as the wafer, in addition to single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide, and the like are used.
ウエハに接着シートを貼り合わせた後、次いで接着シート面にダイシングテープを貼り合わせる。本発明の接着シート又は多層接着シート、及びダイシングテープを備える一体型シートを用いることにより、半導体装置を製造することもできる。接着シートとダイシングテープとを貼り合わせた一体型シートを用いる場合は、上記ウエハ、接着シート及びダイシングテープの順に０℃〜１２０℃で貼り合わせる工程を、ウエハと一体型シートの接着シート側とを０〜１２０℃で貼り合わせる工程に置き換えればよい。接着シートをウエハに貼り付ける温度、即ちラミネート温度は、通常０〜１２０℃であり、好ましくは１５〜８０℃であり、さらに好ましくは２０〜７０℃である。１２０℃を超え場合は、接着シートを貼り付け後のウエハの反りが大きくなる傾向がある。ダイシングテープ又は一体型シートを貼り付ける際にも、上記温度で行うことが好ましい。 After bonding the adhesive sheet to the wafer, a dicing tape is then bonded to the adhesive sheet surface. A semiconductor device can also be manufactured by using the adhesive sheet or multilayer adhesive sheet of the present invention, and an integrated sheet provided with a dicing tape. When using an integrated sheet in which an adhesive sheet and a dicing tape are bonded together, the step of bonding the wafer, the adhesive sheet, and the dicing tape in the order of 0 ° C. to 120 ° C. is performed by combining the wafer and the adhesive sheet side of the integrated sheet. What is necessary is just to replace with the process bonded together at 0-120 degreeC. The temperature at which the adhesive sheet is attached to the wafer, that is, the lamination temperature, is usually 0 to 120 ° C, preferably 15 to 80 ° C, and more preferably 20 to 70 ° C. When the temperature exceeds 120 ° C., the warpage of the wafer after the adhesive sheet is attached tends to increase. It is preferable that the dicing tape or the integrated sheet is also applied at the above temperature.
図３に、本発明の一実施態様である接着シートｂ、半導体ウエハＡ、及びダンシングテープ１の断面図を示す。
In FIG. 3, sectional drawing of the adhesive sheet b which is one embodiment of this invention, the semiconductor wafer A, and the
次いで、接着シート、ダイシングテープが貼り付けられた半導体ウエハを、ダイシングカッターを用いてダイシング、さらに洗浄、乾燥した後、図８に示すようにピックアップなどにより接着シートとダイシングテープ間で剥離して、接着シート付き半導体チップを得ることができる。 Next, the semiconductor wafer to which the adhesive sheet and the dicing tape are attached is diced using a dicing cutter, further washed and dried, and then peeled between the adhesive sheet and the dicing tape with a pickup as shown in FIG. A semiconductor chip with an adhesive sheet can be obtained.
また、他の実施態様として、本発明の接着シートは、図６に示すように基材フィルム５の上に接着シートｂを設けた基材フィルム付き接着シートとして用いてもよい。このようにすれば、接着シート単体では扱いにくい場合でも便利であり、例えば、図６に示す構造の基材フィルム付き接着シートの接着シートｂと上述のダイシングテープ１を貼り合わせた後、基材フィルム５を剥離し、接着シートｂと半導体ウエハＡを貼り合わせることで、容易に図３のような構造とすることができる。
As another embodiment, the adhesive sheet of the present invention may be used as an adhesive sheet with a base film in which an adhesive sheet b is provided on the
上記基材フィルム５としては、特に制限はなく、例えば、ポリエステルフィルム、ポリプロピレンフィルム、ポリエチレンテレフタレートフィルム、ポリイミドフィルム、ポリエーテルイミドフィルム、ポリエーテルナフタレートフィルム、メチルペンテンフィルム等が用いられる。
There is no restriction | limiting in particular as the said
ダイシングダイボンド一体型の接着シートは、好ましくはウエハ、接着シート及び基材フィルムを０℃〜８０℃で貼り合わせた後、回転刃でウエハ、接着シート及び基材フィルムを同時に切断し、接着剤付き半導体チップを得た後、当該接着剤付き半導体チップを凹凸を有する基板又は半導体チップに荷重０．００１〜１ＭＰａで接着し、接着剤で凹凸を充てんする工程を含む半導体装置の製造に用いられる。 The dicing die bond integrated adhesive sheet is preferably attached with a wafer, an adhesive sheet and a base film at 0 ° C. to 80 ° C., and then simultaneously cutting the wafer, the adhesive sheet and the base film with a rotary blade. After the semiconductor chip is obtained, the adhesive-attached semiconductor chip is bonded to a substrate having unevenness or a semiconductor chip with a load of 0.001 to 1 MPa, and used for manufacturing a semiconductor device including a step of filling the unevenness with an adhesive.
得られた接着シート付き半導体チップＡ１は、配線４に起因する凹凸を有する基板３又はワイヤ２に起因する凹凸を有する半導体チップに、接着シートｂ１を介して荷重０．００１〜１ＭＰａで接着され、接着シートにより凹凸が充てんされる（図５）。荷重は０．０１〜０．５ＭＰａであることが好ましく、０．０１〜０．３ＭＰａであることがより好ましい。荷重が０．００１ＭＰａ未満である場合は、ボイドが発生し耐熱性が低下する傾向があり、１ＭＰａを超える場合は、半導体チップが破損する傾向がある。
The obtained semiconductor chip A1 with an adhesive sheet is bonded to the
図５は、接着シート付き半導体チップをワイヤボンディングされた半導体チップに接着する際の工程の一例を示す概略図である。 FIG. 5 is a schematic diagram illustrating an example of a process for bonding a semiconductor chip with an adhesive sheet to a wire-bonded semiconductor chip.
本発明においては、接着シート付き半導体チップを凹凸を有する基板又は半導体チップに接着する際に、基板の配線、半導体チップのワイヤ等に起因する凹凸を加熱することが好ましい。加熱温度は６０〜２４０℃であることが好ましく、１００〜１８０℃であることがより好ましい。加熱温度が６０℃未満である場合は、接着性が低下する傾向があり、２４０℃を超える場合は、基板が変形し、反りが大きくなる傾向がある。加熱方法としては、凹凸を有する基板又は半導体チップを予め加熱した熱板に接触させる方法、凹凸を有する基板又は半導体チップに赤外線又はマイクロ波を照射する方法、凹凸を有する基板又は半導体チップに熱風を吹きかける方法等が挙げられる。 In the present invention, when the semiconductor chip with an adhesive sheet is bonded to a substrate having unevenness or a semiconductor chip, it is preferable to heat unevenness caused by wiring on the substrate, wires of the semiconductor chip, and the like. The heating temperature is preferably 60 to 240 ° C, and more preferably 100 to 180 ° C. When the heating temperature is less than 60 ° C., the adhesiveness tends to decrease, and when it exceeds 240 ° C., the substrate tends to be deformed and warpage tends to increase. As a heating method, a method of bringing a substrate or semiconductor chip having unevenness into contact with a preheated hot plate, a method of irradiating an infrared or microwave to the substrate or semiconductor chip having unevenness, hot air to the substrate or semiconductor chip having unevenness The method of spraying etc. are mentioned.
本発明においては、特定の樹脂組成を有する接着シートは配線回路及びワイヤの充てん性と上下の半導体チップとの絶縁性に優れる。 In the present invention, an adhesive sheet having a specific resin composition is excellent in wiring circuit and wire filling properties and insulation properties between upper and lower semiconductor chips.
また、本発明の接着シートは、配線回路及びワイヤの凹凸部の充てん性が良好であり、また、半導体装置の製造において、ウエハと接着シートを同時に切断するダイシング工程でダイシングの速度を速くすることができる。そのため、本発明の接着シートによれば、半導体装置の歩留の向上、製造速度の向上をはかることが可能となる。 In addition, the adhesive sheet of the present invention has good filling characteristics of the wiring circuit and the concavo-convex portions of the wire, and in the manufacture of a semiconductor device, the dicing speed is increased in the dicing process of simultaneously cutting the wafer and the adhesive sheet. Can do. Therefore, according to the adhesive sheet of the present invention, it is possible to improve the yield of the semiconductor device and the manufacturing speed.
さらに、本発明の接着シートは、半導体装置の製造における半導体チップと基板や下層の半導体チップなどの支持部材との接着工程において、接着信頼性に優れる接着シートとして使用することができる。即ち、本発明の接着シートは、半導体搭載用支持部材に半導体チップを実装する場合に必要な耐熱性、耐湿性、絶縁性を有し、かつ作業性に優れるものである。 Furthermore, the adhesive sheet of the present invention can be used as an adhesive sheet having excellent adhesion reliability in an adhesion process between a semiconductor chip and a support member such as a substrate or a lower layer semiconductor chip in the manufacture of a semiconductor device. That is, the adhesive sheet of the present invention has heat resistance, moisture resistance, insulation necessary for mounting a semiconductor chip on a semiconductor mounting support member, and is excellent in workability.
［接着シートの組成と製造方法］
（実施例１）
エポキシ樹脂としてビスフェノールＦ型エポキシ樹脂（エポキシ当量１６０、分子量３２０、東都化成株式会社製、商品名ＹＤ−８１７０Ｃを使用）２９重量部、クレゾールノボラック型エポキシ樹脂（エポキシ当量２１０、分子量８００〜１５００、東都化成株式会社製、商品名ＹＤＣＮ−７０３を使用）９．７重量部；エポキシ樹脂の硬化剤としてフェノールノボラック樹脂（大日本インキ化学工業株式会社製、商品名プライオーフェンＬＦ２８８２を使用）２７．４重量部；エポキシ基含有アクリル系共重合体としてエポキシ基含有アクリルゴム（ゲル パーミエーション クロマトグラフィーによる重量平均分子量８０万、グリシジルメタクリレート３重量％、Ｔｇは−７℃、ナガセケムテックス株式会社製、商品名ＨＴＲ−８６０Ｐ−３ＤＲを使用）２８．３重量部；硬化促進剤としてイミダゾール系硬化促進剤（四国化成工業株式会社製、キュアゾール２ＰＺ−ＣＮを使用）０．１重量部；シリカフィラー（アドマファイン株式会社製、Ｓ０−Ｃ２（比重：２．２ｇ／ｃｍ３、モース硬度７、平均粒径０．５μｍ、比表面積６．０ｍ２／ｇ））を使用）９４．４重量部；シランカップリング剤として（日本ユニカー株式会社製、商品名Ａ−１８９を使用）０．２５重量部および（日本ユニカー株式会社製、商品名Ａ−１１６０を使用）０．５重量部；からなる組成物に、シクロヘキサノンを加えて撹拌混合し、真空脱気して接着剤ワニスを得た。
[Composition and production method of adhesive sheet]
Example 1
29 parts by weight of bisphenol F type epoxy resin (epoxy equivalent 160, molecular weight 320, manufactured by Toto Kasei Co., Ltd., trade name YD-8170C) as an epoxy resin, cresol novolac type epoxy resin (epoxy equivalent 210, molecular weight 800-1500, Toto 9.7 parts by weight; a phenol novolac resin (Dainippon Ink Chemical Co., Ltd., trade name Pryofen LF2882) used as a curing agent for epoxy resin, 27.4 parts by weight Part: Epoxy group-containing acrylic rubber as epoxy group-containing acrylic copolymer (weight average molecular weight of 800,000 by gel permeation chromatography, 3% by weight of glycidyl methacrylate, Tg of −7 ° C., trade name, manufactured by Nagase ChemteX Corporation HTR-860P 38.3 is used) 28.3 parts by weight; imidazole-based curing accelerator (Shikoku Kasei Kogyo Co., Ltd., Curazole 2PZ-CN is used) 0.1 part by weight; silica filler (manufactured by Admafine, S0) -C2 (specific gravity: 2.2 g / cm 3 , Mohs hardness 7, average particle size 0.5 μm, specific surface area 6.0 m 2 / g))) 94.4 parts by weight; as a silane coupling agent (Nihon Unicar) To the composition consisting of 0.25 parts by weight (made by Co., Ltd., using trade name A-189) and 0.5 parts by weight (made by Nippon Unicar Co., Ltd., using trade name A-1160), cyclohexanone was added and stirred. After mixing and vacuum degassing, an adhesive varnish was obtained.
この接着剤ワニスを、厚さ３５μｍの離型処理したポリエチレンテレフタレートフィルム上に塗布し、９０℃で１０分間、１２０℃で５分間加熱乾燥して膜厚が６０μｍの塗膜とし、Ｂステージ状態の接着シートを作製した。 This adhesive varnish was applied onto a 35 μm thick release-treated polyethylene terephthalate film and dried by heating at 90 ° C. for 10 minutes and at 120 ° C. for 5 minutes to form a coating film having a film thickness of 60 μm. An adhesive sheet was prepared.
（実施例２〜４）
下記表１に示す配合を用いて、実施例１と同様に接着シートを作製した。なお、実施例４においては実施例１で用いたエポキシ基含有アクリル系共重合体としてエポキシ基含有アクリルゴムの分子量低減品（ゲル パーミエーション クロマトグラフィーによる重量平均分子量３０万、グリシジルメタクリレート３重量％、Ｔｇは−７℃、ナガセケムテックス株式会社製）を用いた。
(Examples 2 to 4)
An adhesive sheet was produced in the same manner as in Example 1 using the formulation shown in Table 1 below. In Example 4, the epoxy group-containing acrylic rubber used in Example 1 has a reduced molecular weight product of epoxy group-containing acrylic rubber (weight average molecular weight of 300,000 by gel permeation chromatography, 3% by weight of glycidyl methacrylate, Tg was -7 ° C, manufactured by Nagase ChemteX Corporation.
（比較例１〜３）
下記表１に示す配合を用いて、実施例１と同様に接着シートを作製した。
(Comparative Examples 1-3)
An adhesive sheet was produced in the same manner as in Example 1 using the formulation shown in Table 1 below.
実施例１〜４及び比較例１〜３で作製した接着シートに関し、以下の評価項目について評価を行った。 Regarding the adhesive sheets produced in Examples 1 to 4 and Comparative Examples 1 to 3, the following evaluation items were evaluated.
［評価項目］
（１）貯蔵弾性率の比Ｇ１/Ｇ１０の測定方法
硬化前の接着シートを７０℃でずり弾性率測定試験に供した。ＴＡインスツルメンツ製ＡＲＥＳを用い、一定周波数１．０（ｓ−１）で、ひずみ量１（％）における貯蔵弾性率Ｇ１とひずみ量１０（％）における貯蔵弾性率Ｇ１０（％）を測定し、貯蔵弾性率の比Ｇ１/Ｇ１０を求めた。
[Evaluation item]
(1) it was subjected to shear elastic modulus measurement test at 70 ° C. The adhesive sheet before measuring method curing ratio G 1 / G 10 of the storage modulus. Using ARES manufactured by TA Instruments, the storage elastic modulus G 1 at a strain amount of 1 (%) and the storage elastic modulus G 10 (%) at a strain amount of 10 (%) were measured at a constant frequency of 1.0 (s −1 ). The storage elastic modulus ratio G 1 / G 10 was determined.
（２）ずり粘度の比η１／η２の測定方法
硬化前の接着シートをＴＡインスツルメンツ製ＡＲＥＳを用いて、７０℃、ひずみ量０．４（％）、剪断速度０．１（ｓ−１）の条件でずり粘度η１を測定し、ひずみ量０．４（％）、剪断速度１００（ｓ−１）の条件でずり粘度η２を測定し、ずり粘度の比η１／η２を求めた。
(2) Measuring method of shear viscosity ratio η 1 / η 2 The adhesive sheet before curing is made by using TA Instruments ARES, 70 ° C., strain amount 0.4 (%), shear rate 0.1 (s −1 ), The shear viscosity η 1 is measured, the shear viscosity η 2 is measured under the conditions of a strain amount of 0.4 (%) and a shear rate of 100 (s −1 ), and the shear viscosity ratio η 1 / η 2 is calculated. Asked.
（３）タック強度の測定方法
Ｂステージ状態の基材フィルム付き接着シートの塗工した上面のタック強度を、レスカ株式会社製プローブタッキング試験機を用いて、ＪＩＳ Ｚ０２３７−１９９１に記載の方法（プローブ直径５．１ｍｍ、引き剥がし速度１０ｍｍ／ｓ、接触荷重１００ｇｆ／ｃｍ２、接触時間１ｓ）により測定した。
(3) Measuring method of tack strength The tack strength of the upper surface coated with the adhesive sheet with the base film in the B-stage state is measured according to the method described in JIS Z0237-1991 (probe) using a probe tacking tester manufactured by Reska Co., Ltd. The diameter was 5.1 mm, the peeling speed was 10 mm / s, the contact load was 100 gf / cm 2 , and the contact time was 1 s).
（４）ラミネート性
ホットロールラミネータ（６０℃、０．３ｍ／分、０．３ＭＰａ）で幅１０ｍｍの接着シートとウエハを貼り合わせ、その後、接着シートをＴＯＹＯＢＡＬＷＩＮ製ＵＴＭ−４−１００型テンシロンを用いて、２５℃の雰囲気中で、９０°の角度で、５０ｍｍ／分の引張り速度で剥がしたときの９０°ピール強度を求めた。９０°ピール強度が３０Ｎ／ｍ以上の場合はラミネート性良好、９０°ピール強度が３０Ｎ／ｍ未満の場合はラミネート性不良とした。
(4) Laminating property An adhesive sheet having a width of 10 mm and a wafer are bonded with a hot roll laminator (60 ° C., 0.3 m / min, 0.3 MPa), and then the adhesive sheet is made of TOYOBALWIN UTM-4-100 type Tensilon. The 90 ° peel strength when peeled off at an angle of 90 ° at a pulling speed of 50 mm / min in an atmosphere of 25 ° C. was obtained. When the 90 ° peel strength was 30 N / m or more, the laminate property was good, and when the 90 ° peel strength was less than 30 N / m, the laminate property was poor.
（５）吸湿耐リフロークラック性、耐温度サイクル性、ワイヤ充てん性
半導体ウエハ（厚さ８０μｍ）に接着シートを６０℃でラミネートし、端部を切断した。ダイシングテープ（古河電工株式会社製、商品名ＵＣ３００４Ｍ−８０、膜厚１００μｍ）を接着シート側に積層し、ホットロールラミネータ（Ｄｕ Ｐｏｎｔ製、Ｒｉｓｔｏｎ）で２５℃でラミネートした。次いで、ダイシングカッターを用いてダイシングし、さらに洗浄、乾燥を行った後、ピックアップによりダイシングテープを剥離して接着シート付き半導体チップを得た。接着シート付き半導体チップと、厚み２５μｍのポリイミドフィルムを基材に用いた高さ１０μｍの凹凸を有する配線基板を０．０５ＭＰａ、１秒、１３０℃の条件で貼り合せた半導体装置サンプル（片面にはんだボールを形成）を作製し、吸湿耐リフロークラック性、耐温度サイクル性を調べた。
(5) Moisture absorption reflow crack resistance, temperature cycle resistance, wire filling property An adhesive sheet was laminated to a semiconductor wafer (thickness: 80 μm) at 60 ° C., and the edge was cut. A dicing tape (manufactured by Furukawa Electric Co., Ltd., trade name UC3004M-80, film thickness 100 μm) was laminated on the adhesive sheet side and laminated at 25 ° C. with a hot roll laminator (Du Pont, Riston). Next, the wafer was diced using a dicing cutter, further washed and dried, and then the dicing tape was peeled off with a pickup to obtain a semiconductor chip with an adhesive sheet. A semiconductor device sample (soldered on one side) of a semiconductor chip with an adhesive sheet and a wiring board having an unevenness of 10 μm height using a polyimide film with a thickness of 25 μm as a base material under the conditions of 0.05 MPa, 1 second, and 130 ° C. Ball was formed), and the moisture absorption reflow crack resistance and temperature cycle resistance were examined.
（吸湿耐リフロークラック性）
吸湿耐リフロークラック性の評価は、半導体装置サンプルを８５℃相対湿度６０％の環境に１６８時間放置した後、サンプル表面の最高温度が２６０℃でこの温度を２０秒間保持するように温度設定したＩＲリフロー炉にサンプルを通し、室温で放置することにより冷却する処理を２回繰り返したサンプル中のクラックを、目視と超音波顕微鏡で視察した。試料１０個すべてでクラックの発生していないものを○とし、１個以上発生していたものを×とした。
(Hygroscopic resistance to reflow cracking)
Evaluation of moisture absorption reflow crack resistance was conducted by leaving a semiconductor device sample in an environment of 85 ° C. and 60% relative humidity for 168 hours, and then setting IR so that the maximum temperature of the sample surface was 260 ° C. and this temperature was maintained for 20 seconds. The sample was passed through a reflow oven and allowed to cool at room temperature for cooling twice. The cracks in the sample were observed visually and with an ultrasonic microscope. In all 10 samples, no crack occurred and ◯ indicates that one or more cracks occurred.
（耐温度サイクル性）
耐温度サイクル性は、サンプルを−５５℃雰囲気に３０分間放置し、その後１２５℃の雰囲気に３０分間放置する工程を１サイクルとして、１０００サイクル後において超音波顕微鏡を用いて剥離やクラック等の破壊が試料１０すべてで発生していないものを○、１個以上発生したものを×とした。
(Temperature cycle resistance)
The temperature cycle resistance is that the sample is left in a −55 ° C. atmosphere for 30 minutes and then left in a 125 ° C. atmosphere for 30 minutes. After 1000 cycles, an ultrasonic microscope is used to destroy peeling or cracks. Is not generated in all of the samples 10, and one or more is generated is ×.
（ワイヤ充てん性）
前記により作製された半導体チップ付き接着シートと、半導体チップ上に高さ５０μｍになるように金ワイヤ（直径２５μｍ）を布線した半導体チップとを０．４ＭＰａあるいは０．０８ＭＰａの圧力で１秒、１３０℃の条件で貼り合せたサンプルについて充てん性を評価した。半導体チップ中央部の断面を研磨し、光学顕微鏡でボイドの有無を調査した。直径３００μｍ以上のボイドのないものを○、あるものを×とした。
(Wire fillability)
An adhesive sheet with a semiconductor chip manufactured as described above and a semiconductor chip in which a gold wire (diameter 25 μm) is laid on the semiconductor chip so as to have a height of 50 μm are applied at a pressure of 0.4 MPa or 0.08 MPa for 1 second, The filling property was evaluated about the sample bonded on condition of 130 degreeC. The cross section of the central part of the semiconductor chip was polished, and the presence or absence of voids was examined with an optical microscope. Those having no voids with a diameter of 300 μm or more were marked with ◯, and those with voids were marked with ×.
また、チップ端部からの樹脂のはみだしが１５０μｍ超のものを×、１５０μｍ以下のものを○とした。 Moreover, the thing of the protrusion of the resin from a chip | tip edge part exceeding 150 micrometers is set to x, and the thing of 150 micrometers or less is set to (circle).
サンプルの作製方法について詳しく説明すると、接着シート単体の厚みが１００μｍ未満である場合は、接着シートを複数枚数貼り合わせて１００〜３００μｍの厚さにする。厚さが１００〜３００μｍであれば測定値が再現性よく得られるためである。例えば接着シート単体の厚みが４０μｍである場合は、接着シートを３〜７枚貼り合わせればよい。また、貼り合わせる条件はサンプルによって異なるが、測定中に貼り合わせ面において剥離が生じないようにすればよく、通常その接着シートの硬化が進まない条件で貼り合わせる。 The method for producing the sample will be described in detail. When the thickness of the adhesive sheet alone is less than 100 μm, a plurality of adhesive sheets are bonded to a thickness of 100 to 300 μm. This is because the measured value can be obtained with good reproducibility when the thickness is 100 to 300 μm. For example, when the thickness of the adhesive sheet alone is 40 μm, 3 to 7 adhesive sheets may be bonded together. Moreover, although the conditions for bonding differ depending on the sample, it is only necessary to prevent peeling on the bonding surface during measurement, and the bonding is usually performed under the condition that the adhesive sheet does not cure.
評価結果を下記表１に示した。
＊１：エポキシ基含有アクリルゴム（ゲル パーミエーション クロマトグラフィーによる重量平均分子量８０万、グリシジルメタクリレート３重量％、Ｔｇは−７℃、ナガセケムテックス株式会社製、商品名ＨＴＲ−８６０Ｐ−３ＤＲを使用）
＊２：エポキシ基含有アクリルゴムの分子量低減品（ゲル パーミエーション クロマトグラフィーによる重量平均分子量３０万、グリシジルメタクリレート３重量％、Ｔｇは−７℃、ナガセケムテックス株式会社製）
＊３：アクリルゴムの含有率（ｗｔ％）はアクリルゴム、エポキシ樹脂、硬化剤、硬化促進剤及びシリカフィラーの総重量に対するアクリルゴムの割合を示す。
＊４：フィラーの含有率（ｗｔ％）はアクリルゴム、エポキシ樹脂、硬化剤、硬化促進剤及びシリカフィラーの総重量に対するシリカフィラーの割合を示す。
＊５：樹脂中のアクリルゴムの含有率（ｗｔ％）はアクリルゴム、エポキシ樹脂、硬化剤の総重量に対するアクリルゴムの割合を示す。
実施例１〜４は、充てん性、吸湿耐リフロークラック性、耐温度サイクル性が良好である。比較例１〜３はいずれも不良である。
* 1: Epoxy group-containing acrylic rubber (weight average molecular weight by gel permeation chromatography: 800,000, glycidyl methacrylate: 3% by weight, Tg: -7 ° C, manufactured by Nagase ChemteX Corporation, trade name HTR-860P-3DR is used)
* 2: Epoxy group-containing acrylic rubber with reduced molecular weight (weight average molecular weight by gel permeation chromatography: 300,000, glycidyl methacrylate: 3% by weight, Tg: -7 ° C, manufactured by Nagase ChemteX Corporation)
* 3: Acrylic rubber content (wt%) indicates the ratio of acrylic rubber to the total weight of acrylic rubber, epoxy resin, curing agent, curing accelerator and silica filler.
* 4: Filler content (wt%) indicates the ratio of silica filler to the total weight of acrylic rubber, epoxy resin, curing agent, curing accelerator and silica filler.
* 5: The acrylic rubber content (wt%) in the resin indicates the ratio of the acrylic rubber to the total weight of the acrylic rubber, epoxy resin, and curing agent.
Examples 1-4 have good filling properties, moisture absorption reflow crack resistance, and temperature cycle resistance. Comparative Examples 1 to 3 are all defective.
以上、本発明について実施例を用いて説明してきたが、以下の作用効果を奏することがわかった。本発明の接着シートを用いた場合は、半導体チップと凹凸を有する基板、ワイヤ付き半導体チップとの接着工程において、充てん性に優れ、また半導体搭載用支持部材に半導体チップを実装する場合に必要な耐熱性、耐湿性を有し、かつ作業性に優れる。このことから、本発明の接着シートによれば、半導体装置の信頼性の向上と共に、半導体装置の加工速度、歩留の向上をはかることが可能となる。 As mentioned above, although this invention has been demonstrated using the Example, it turned out that there exist the following effects. When the adhesive sheet of the present invention is used, it is excellent in filling in the bonding process between the semiconductor chip, the substrate having irregularities, and the semiconductor chip with wire, and is necessary when the semiconductor chip is mounted on the semiconductor mounting support member. It has heat resistance and moisture resistance and is excellent in workability. Therefore, according to the adhesive sheet of the present invention, it is possible to improve the reliability of the semiconductor device and improve the processing speed and yield of the semiconductor device.
Ａ 半導体ウエハ
Ａ１ 半導体チップ
ａ 第１の接着剤層
ｂ 接着シート
ｂ’ 第２の接着剤層
ｂ１ 接着剤
ｃ 多層接着シート
１ ダイシングテープ
２ ワイヤ
３ 基板
４ 配線
５ 基材フィルム
A Semiconductor wafer A1 Semiconductor chip a First adhesive layer b Adhesive sheet b ′ Second adhesive layer b1 Adhesive c Multilayer
Claims (8)
樹脂と、該樹脂１００重量部に対しフィラー４０〜１８０重量部とを含む樹脂組成物からなり、
前記樹脂が、分子量８００以上のエポキシ樹脂を含む熱硬化性成分６０〜８５重量％と、重量平均分子量が１０万〜３０万で、かつＴｇが−５０〜５０℃であるエポキシ基含有（メタ）アクリル共重合体１５〜４０重量％とを含み、
接着シート成分を含むワニスを塗布し、９０℃で１０分間、１２０℃で５分間加熱乾燥して塗膜とした、膜厚が６０μｍの接着シートにおける７０℃でのずり弾性率測定において、ひずみ量１％の貯蔵弾性率Ｇ１、ひずみ量１０％の貯蔵弾性率Ｇ１０の比Ｇ１／Ｇ１０が１．２〜１００であり、かつ、７０℃での剪断速度０．１（ｓ−１）、ひずみ量０．４％の条件で測定した溶融粘度が１００Ｐａ・ｓ〜２５万Ｐａ・ｓであることを特徴とする接着シート。 A semiconductor chip with an adhesive sheet obtained by dicing a wafer, an adhesive sheet and a dicing tape bonded together on an uneven substrate or another semiconductor chip with an uneven surface is an adhesive sheet of the semiconductor chip with an adhesive sheet. It is an adhesive sheet for use by adhering at a load of 0.001 to 1 MPa so as to fill the unevenness,
A resin, a resin composition containing a filler 40 to 180 parts by weight per the resin 100 parts by weight,
An epoxy group-containing (meth) in which the resin is 60 to 85% by weight of a thermosetting component containing an epoxy resin having a molecular weight of 800 or more, a weight average molecular weight is 100,000 to 300,000, and Tg is −50 to 50 ° C. Acrylic copolymer 15 to 40 wt%,
In the measurement of shear modulus at 70 ° C. in an adhesive sheet having a film thickness of 60 μm, a varnish containing an adhesive sheet component was applied and dried by heating at 90 ° C. for 10 minutes and 120 ° C. for 5 minutes. The ratio G 1 / G 10 of the storage elastic modulus G 1 of 1 % and the storage elastic modulus G 10 of 10% strain is 1.2 to 100, and the shear rate at 70 ° C. is 0.1 (s −1 ), An adhesive sheet having a melt viscosity of 100 Pa · s to 250,000 Pa · s measured under a strain amount of 0.4%.
ウエハ、接着シート及びダンシングテープを同時に切断し、接着シートとダイシングテープ間で剥離して接着シート付き半導体チップを得る工程、
前記接着シート付き半導体チップを、凹凸を有する基板又は他の半導体チップに荷重０．００１〜１ＭＰａで接着する工程と、
を含む半導体装置の製造方法。 A step of bonding the wafer, the adhesive sheet according to any one of claims 1 to 4 and a dicing tape in this order at 0 ° C to 120 ° C,
Wafer, the adhesive sheet and Dancing tape simultaneously cut to obtain an adhesive sheet and the semiconductor chip with the adhesive sheet apart peeling between the dicing tape process,
A step of bonding a load 0.001~1MPa the semiconductor chip with the adhesive sheet, the substrate or other semiconductor chip having irregularities,
A method of manufacturing a semiconductor device including:
ウエハと一体型シートを同時に切断し、一体型シートの接着シートとダイシングテープ間で剥離して接着シート付き半導体チップを得る工程、
前記接着シート付き半導体チップを、凹凸を有する基板又は他の半導体チップに荷重０．００１〜１ＭＰａで接着する工程と、
を含む半導体装置の製造方法。 Bonding the wafer and the adhesive sheet side of the integrated sheet according to claim 5 at 0 ° C to 120 ° C;
Cutting the wafer and the integrated sheet at the same time, and peeling between the adhesive sheet of the integrated sheet and the dicing tape to obtain a semiconductor chip with an adhesive sheet;
A step of bonding a load 0.001~1MPa the semiconductor chip with the adhesive sheet, the substrate or other semiconductor chip having irregularities,
A method of manufacturing a semiconductor device including:
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| JP2008124141A (en) * | 2006-11-09 | 2008-05-29 | Shin Etsu Chem Co Ltd | Adhesive film for dicing/die bond |
| JP2010067772A (en) * | 2008-09-10 | 2010-03-25 | Sekisui Chem Co Ltd | Dicing/die bonding tape and method for manufacturing semiconductor chip |
| JP5976716B2 (en) * | 2008-12-24 | 2016-08-24 | 日東電工株式会社 | Thermosetting die bond film |
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| JP4897979B2 (en) * | 2010-03-30 | 2012-03-14 | 古河電気工業株式会社 | Chip protection film |
| JP6366228B2 (en) * | 2013-06-04 | 2018-08-01 | 日東電工株式会社 | Adhesive sheet and dicing die bonding film |
| CN111630640B (en) * | 2018-01-30 | 2023-04-28 | 日立化成株式会社 | Method for manufacturing semiconductor device, film-like adhesive, and adhesive sheet |
| KR20220122998A (en) * | 2019-12-27 | 2022-09-05 | 린텍 가부시키가이샤 | Curable resin film, composite sheet, and manufacturing method of a semiconductor chip |
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