TW201428115A - 薄膜金屬氮氧化半導體 - Google Patents
薄膜金屬氮氧化半導體 Download PDFInfo
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- TW201428115A TW201428115A TW103112326A TW103112326A TW201428115A TW 201428115 A TW201428115 A TW 201428115A TW 103112326 A TW103112326 A TW 103112326A TW 103112326 A TW103112326 A TW 103112326A TW 201428115 A TW201428115 A TW 201428115A
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- Prior art keywords
- nitrogen
- oxygen
- tin
- semiconductor
- semiconductor film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 229910052751 metal Inorganic materials 0.000 title claims description 18
- 239000002184 metal Substances 0.000 title claims description 18
- 239000010409 thin film Substances 0.000 title description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 101
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 74
- 239000001301 oxygen Substances 0.000 claims abstract description 74
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 74
- 239000007789 gas Substances 0.000 claims abstract description 57
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 49
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052718 tin Inorganic materials 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000005477 sputtering target Methods 0.000 claims abstract description 26
- 238000000151 deposition Methods 0.000 claims abstract description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 20
- 229910052738 indium Inorganic materials 0.000 claims abstract description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 17
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 17
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 12
- 239000011701 zinc Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 27
- 239000002019 doping agent Substances 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 5
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- 229920005591 polysilicon Polymers 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 68
- 239000011135 tin Substances 0.000 description 43
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- 229910052732 germanium Inorganic materials 0.000 description 19
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 17
- 229910052786 argon Inorganic materials 0.000 description 15
- 230000008021 deposition Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000005546 reactive sputtering Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 229910007717 ZnSnO Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910015148 B2H6 Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- CMLMFNACXHHYRY-UHFFFAOYSA-N azanylidynetin Chemical class [N].[Sn] CMLMFNACXHHYRY-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
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Abstract
本發明一般相關於一半導體薄膜和沉積該半導體薄膜之方法。該半導體薄膜包括氧、氮、與選自由下列所組成的群組之一或多元素:鋅、鎘、鎵、銦和錫。此外,半導體薄膜可摻質。可施加一電偏壓至一濺射靶材並導入一含氮氣體和一含氧氣體來沉積該半導體薄膜,該濺射靶材包括選自由下列所組成群組之一或多元素:鋅、鎘、鎵、銦、錫。該濺射靶材可以被摻質。該半導體薄膜具有比非晶矽大的遷移率。退火後,該半導體薄膜具有的遷移率大於多晶矽。
Description
本發明之實施例一般相關於半導體材料和用以沉積半導體材料之方法。
半導體層的電子遷移率對於一裝置的速度以驅動經過該裝置的電流有很大的影響。在相同的電壓下,較高的電子遷移率,有較快的裝置速度,和較高的源-汲電流。近年來,非晶矽和多晶矽一直作為半導體材料的選擇,其可用於薄膜電晶體(TFTs)、驅動液晶顯示器(LCD)之背板、有機發光二極體(OLED)顯示器、量子點顯示器、和製造太陽能電池面板。非晶矽可能具有的電子遷移率高達約1cm2/V-s。低溫多晶矽可能具有的電子遷移率高於50cm2/V-s,但需要一種複雜的製程步驟,例如,雷射退火,以達成電子遷移率。因此,製造具有高於cm2/V-s之電子遷移率的多晶矽的成本非常高,不適合大面積基板的應用。
在一場效電晶體(FET)中,半導體材料源極和汲極電極間產生通道。若沒有供應給柵電極一電壓,就沒有電流能通過源-汲電極,即便在源汲極電極間有一電壓。當電
壓被供應至柵電極,在半導體層內的移動電子將聚集在非常接近柵介電層和半導體層間的界面之區域。半導體層變可導電,而在源-汲極電極間可以一低電壓輕易地通過源-汲電極。半導體材料的高遷移率表示在半導體中的移動電子對於由柵電極所產生的電場更為敏感,並且該半導體通道變得更加導電。半導體材料決定了可能通過半導體通道的電流,其中該半導體通道係被施加至該閘和源端的電壓所影響。若半導體材料有較大的遷移率,則只需要較小的電壓即可跨越FET產生所需的電流。
非晶矽可以被氫鈍化,以在TFT中達成理想的遷移率。可在高達攝氏350度的溫度中藉由化學氣相沉積(CVD)沉積非晶矽。在由設備本身所產生的柵電極電壓和相對較高的溫度下,用來使非晶矽達到理想的遷移率的氫鈍化製程可能不穩定,例如,一TFT閾值電壓會隨著時間而改變。
因此,在本領域中需要一種穩定的半導體材料,其不僅是在具有高製程溫度的玻璃基板,且在塑膠基板及其他彈性基板,都具有足夠高的遷移率。
本發明一般相關於一半導體薄膜和沉積該半導體薄膜之方法。該半導體薄膜包括氧、氮、與選自由下列所組成的群組之一或多元素:鋅、鎘、鎵、銦和錫。此外,半導體薄膜可摻質。可施加一電偏壓至一濺射靶材來沉積該半導體薄膜,該濺射靶材包括選自由下列所組成群組之一或多元
素:鋅、鎘、鎵、銦、錫、並導入一含氮氣體和一含氧氣體。該濺射靶材可以被摻質。該半導體薄膜具有比非晶矽大的遷移率。退火後,該半導體薄膜具有的遷移率大於多晶矽。
在一實施例中,一種濺射方法包含下列步驟:使一含氧氣體、惰性氣體、及一含氮氣體流至一處理室;施加一電偏壓到濺射靶材,其包括選自由下列金屬所組成群組之一或多金屬:鎵、鎘、銦、和錫;以及在一基板上沉積一半導體層,該半導體層包含該一或多金屬、氧、和氮。
在另一實施例中,一種半導體材料包括:氮、氧、和選自由下列組成之群組之一或多元素:鎵、鎘、銦、和錫。在另一實施例中,一種半導體材料包括:氧、氮、和具有一填滿s軌道和一填滿d軌道之一或多元素。
在另一實施例中,一種半導體層沉積方法,包括下列步驟:將下列導入一處理室:一含氧前驅物、一含氮前驅物、以及選自由下列組成之群組之至少一前驅物:一鎵前驅物、一鎘前驅物、一錫前驅物、以及一銦前驅物;以及在置於該處理室的一基板上沉積一半導體層,該半導體層包括:氧、氮、和選自由下列組成之群組之至少一元素:鎵、鎘、錫、和銦。
在另一實施例中,一種半導體層沉積方法,包括下列步驟:使一含氧氣體及一含氮氣體流至一處理室;施加一電偏壓到一濺射靶材,其包括具有一填滿s軌道和一填滿d軌道之一或多元素;以及在一基板上沉積一半導體層,該半導體層包含該一或多元素、氧、和氮。
100‧‧‧處理室
102‧‧‧基板
104‧‧‧靶材
106‧‧‧基座
108‧‧‧舉升梢
110‧‧‧接地帶
112‧‧‧驅動器
114‧‧‧真空泵
116‧‧‧背板
118‧‧‧磁控管
120‧‧‧黑暗空間遮板
122‧‧‧處理室遮板
124‧‧‧陽極
126‧‧‧氣體引入管
128‧‧‧耦接器
130‧‧‧支架
132‧‧‧氣體面板
簡介如上之本發明上述之特徵可藉由下文之實施方式進一步了解,可能需參考實施例,其部分係藉由附圖所繪示。然而需指出的是,附圖僅說明本發明之典型實施例,因此不應視為限制本發明之範圍,而應含括其他均等之實施例。
圖1是一濺射處理室之截面視圖,依據本發明之一實施例,該濺射處理室可用於沉積半導體薄膜。
圖2A是一示意圖,其繪示氮氣流量對具有錫、氧、氮之半導體薄膜之通過率的影響。
圖2B是一示意圖,其繪示氧氣流量對具有錫、氧、氮之半導體薄膜之通過率的影響。
圖3A和3B之XRD圖繪示一半導體薄膜之膜結構,其包含:錫、氮和氧。
本發明一般相關於一半導體薄膜和沉積該半導體薄膜之方法。該半導體薄膜包括氧、氮、與選自由下列所組成的群組之一或多元素:鋅、鎘、鎵、銦和錫。此外,該半導體薄膜可被摻質。可施加一電偏壓至一濺射靶材來沉積該半導體薄膜,該濺射靶材包括選自由下列所組成群組之一或多元素:鋅、鎘、鎵、銦、錫、並導入一含氮氣體和一含氧氣體。該濺射靶材可以被摻質。該半導體薄膜具有比非晶矽大的遷移率。退火後,該半導體薄膜具有的遷移率大於多晶矽。
本文揭示一種反應濺射方法,其可實施於一物理氣相沉積處理室以處理大面積基板,例如,一4300物理氣相沉
積處理室,其可從應用材料公司(加利福尼亞州聖克拉拉市)之分公司AKT取得。然而,因為依據本方法所生產的半導體薄膜可藉由薄膜結構和組成來決定,請注意,反應濺射方法可用於其他的系統配置,包括:經配置以處理一大面積圓型基板的系統;以及其他設備商所生產的系統,包括:捲軸式處理平台。亦可明白,雖然本發明在下文中揭示為藉由物理氣相沉積來進行沉積,亦可使其他方法來沉積本發明之薄膜,包括可以用來沉積本發明之化學氣相沉積(CVD)、原子層沉積(ALD)、或旋轉製程。
圖1是一截面示意圖,其繪示依據本發明之一實施例的一PVD處理室100。處理室100可藉由一真空泵114抽真空。在處理室100中,一基板102可置於一靶材104的對面。該基板可置於處理室100內的一基座106。該基座106可藉由驅動器112升高和降低,如箭頭“A”所示。該基座106可提高以提高基板102至處理位置,並降低以使基板102自處理室100移除。當基座106在較低位置時,舉升梢108提高基板102至基座106之上。接地帶110可使基座106在處理過程中接地。在處理過程中可提升該基座106,以利於均勻沉積。基座106的溫度可被保持在室溫至攝氏400度的範圍內。在一實施例中,基座106的溫度可被保持在約攝氏25度和約攝氏250度。
靶材104可能包括一或多靶材104。在一實施例中,靶材104可能包括一大面積濺射靶材104。在另一實施例中,靶材可能包括104多個貼片。在又一實施例中,靶材104可
能包括多個靶材條。在另一實施例中,靶材104可能包括一或多圓筒形且可旋轉的靶材。靶材104可藉由一接合層(未顯示)接合至一背板116。一或多磁控管118可被置於背板116之後。該磁控管118可以直線運動或以二維路線來掃描整個背板116。處理室的牆可藉由一黑暗空間遮板120和處理室遮板122來遮蔽。
為了利於在整個基板102上提供均勻的濺射沉積,一陽極124可放在靶材104和基板102之間。在一實施例中,陽極124可珠擊經電弧熔射塗層的不銹鋼。在一實施例中,陽極124的一端可藉由一支架130安裝在處理室牆壁。陽極124提供一相反於靶材104之電荷,以將荷電離子吸引至靶材104,而非通常是接地的處理室牆壁。藉由在靶材104和基板102之間提供陽極124,電漿可能會更均勻,這可利於沉積。為了減少剝落,可通過一或多陽極124一冷卻液。藉由減少陽極124擴張和收縮的次數,可減少來自陽極124之材料的剝落。對於較小的基板,及因此較小的製程處理室,不一定要是處理室牆之跨越處理空間的陽極124可充分提供一接地的路徑和一均勻電漿分佈。
對於反應濺射,它可能有利於對處理室100提供一反應氣體。一或多氣體引入管126也可以跨越處理室100而介於靶材104和基板102之間。對於較小的基板及因此較小的處理室,跨越處理空間且不一定需要均勻分佈氣體之氣體引入管126可經由傳統氣體分配裝置。氣體引入管126可從氣體面板132引入濺射氣體。氣體引入管126可藉由一或多
耦接器128耦接陽極124。耦接器128可由導熱材料製成,以使氣體引入管126能進行傳導冷卻。此外,耦接器128可導電,以使氣體引入管126接地且作為陽極來作用。
反應濺射製程可能包括:在一濺射處理室中,將一金屬濺射靶材置於基板對面。金屬濺射靶材可包括選自由下列所組成的群組之一或多元素:鋅、鎵、銦、錫、和鎘。在一實施例中,濺射靶材可能包括具有一填滿s軌道和一填滿d軌道之一或多元素。在另一實施例中,該濺射靶材可能包括具有一填滿f軌道之一或多元素。在另一實施例中,該濺射靶材可能包括一或多二價元素。在另一實施例中,該濺射靶材可能包括一或多三價元素。在另一實施例中,該濺射靶材可能包括一或多四價元素。
濺射靶材亦可包括一摻質。可使用之適合的摻質包括鋁、錫、鎵、鈣、矽、鈦、銅、鍺、銦、鎳、錳、鉻、釩、鎂、SixNy、AlxOy、和SiC。在一實施例中,摻質包括鋁。在一實施例中,摻質包括錫。另一方面,基板可能包括塑塑、紙、聚合物、玻璃、不銹鋼、以及它們的組合。當基板是塑塑時,反應濺射可能會發生在溫度低於攝氏180度。可以沉積的半導體薄膜的例子包括:ZnOxNy:Al,ZnOxNy:Sn,SnOxNy:Al,InOxNy:Al,InOxNy:Sn,CdOxNy:Al,CdOxNy:Sn,GaOxNy:Al,GaOxNy:Sn,ZnSnOxNy:Al ZnInOxNy:Al,ZnInOxNy:Sn,ZnCdOxNy:Al,ZnCdOxNy:Sn,ZnGaOxNy:Al,ZnGaOxNy:Sn,SnInOxNy:Al,SnCdOxNy:Al,SnGaOxNy:Al,InCdOxNy:Al,InCdOxNy:Sn,InGaOxNy:Al,InGaOxNy:Sn,
CdGaOxNy:Al,CdGaOxNy:Sn,ZnSnInOxNy:Al,ZnSnCdOxNy:Al,ZnSnGaOxNy:Al,ZnInCdOxNy:Al,ZnInCdOxNy:Sn,ZnInGaOxNy:Al,ZnInGaOxNy:Sn,ZnCdGaOxNy:Al,ZnCdGaOxNy:Sn,SnInCdOxNy:Al,SnInGaOxNy:Al,SnCdGaOxNy:Al,InCdGaOxNy:Al,InCdGaOxNy:Sn,ZnSnInCdOxNy:Al,ZnSnInGaOxNy:Al,ZnInCdGaOxNy:Al,ZnInCdGaOxNy:Sn,and SnInCdGaOxNy:Al。
在濺射製程期間,氬氣、含氮氣體、和含氧氣體可提供給處理室,用於反應濺射的金屬靶材。額外的添加劑,如B2H6、二氧化碳、一氧化碳、甲烷、以及它們的組合也可以在濺射期間提供給處理室。在一實施例中,含氮氣體包含N2。在另一實施例中,含氮氣體包括:一氧化二氮、氨、或其組合。在一實施例中,含氧氣體包含O2。在另一實施例中,含氧氣體包含N2O。含氮氣體的氮和含氧氣體的氧與濺射靶材的金屬在基板上反應形成半導體材料,包括:金屬、氧、氮、和選擇性地一摻質。在一實施例中,含氮氣體和含氧氣體是不同氣體。在另一實施例中,含氮氣體和含氧氣體包含相同氣體。
沉積薄膜是一種半導體薄膜。可以沉積半導體薄膜的例子包括:ZnOxNy,SnOxNy,InOxNy,CdOxNy,GaOxNy,ZnSnOxNy,ZnInOxNy,ZnCdOxNy,ZnGaOxNy,SnInOxNy,SnCdOxNy,SnGaOxNy,InCdOxNy,InGaOxNy,CdGaOxNy,ZnSnInOxNy,ZnSnCdOxNy,ZnSnGaOxNy,ZnInCdOxNy,ZnInGaOxNy,ZnCdGaOxNy,SnInCdOxNy,SnInGaOxNy,
SnCdGaOxNy,InCdGaOxNy,ZnSnInCdOxNy,ZnSnInGaOxNy,ZnInCdGaOxNy,和SnInCdGaOxNy。上述半導體薄膜之各者可能被一摻質所摻質。
半導體薄膜可以包括一個氮化合物。在一實施例中,半導體薄膜包含金屬氮氧化合物以及金屬氮化合物。在另一實施例中,半導體薄膜可包括一金屬氮氧化合物、一金屬氮化物、及一金屬氧化物。在另一實施例中,半導體薄膜可包括一金屬氮氧化合物和一金屬氧化物。在另一實施例中,半導體薄膜可包括一金屬氮化合物和一金屬氧化物。
含氮氣體與含氧氣體的比例可能影響半導體薄膜的遷移率、載子濃度和電阻率。表一顯示氮流率對在氬氣和氮氣的氣體環境中濺射之一錫靶的遷移率、電阻率、和載子濃度之影響。一般而言,表一顯示當氮流率增加時,遷移率也增加。氬和氧流率可維持不變。在表一,氬流率是60sccm,而氧流率是5sccm。較高的基板溫度同時也增加了遷移率。載子濃度與遷移率呈弱相關。沉積薄膜是一種n型半導體材料,其可作為一電載子,及因此載子濃度呈現為負數。
含氧氣體也影響半導體薄膜的遷移率、載子濃度和電阻率。表二顯示氧流率對在氬氣、氮氣、和氧氣的氣體環境中濺射之一錫靶的遷移率、電阻率、和載子濃度之影響。氬流率可維持不變。在表二中,氬氣流率為60sccm。一般而言,表二繪示較高的氮氣氧氣比的遷移率可能高於非晶矽的遷移率。此外,氮對氧的比例愈高,則有較低的載子濃度。在一200sccm氮氣流率的情況下,當氧流率增加,則遷移率增加,而後氧流率較高,而遷移率減少。在一實施例中,溫度為攝氏150度時,遷移率可能介於約400cm2/V-s和約10cm2/V-s之間。遷移率的增加與載子濃度不相關。因此,遷移率的改善可能是由於較少的載子散射。如果不使用氮添加劑,遷移率可能非常的低。在這種情況下,當氧氣流量增加,則載子濃度大幅下降。當錫靶材的基板溫度較高時,則有較佳的遷移率。在一實施例中,壓力可能會介於約5mTorr至約20mTorr之間。
摻質的量還可能影響到沉積薄膜的遷移率。然而,不論靶材摻質與否,當氮氣流量增加,一般而言遷移率仍然會增加。表三顯示摻質對遷移率、載子濃度、和電阻率的效應。摻質是以重量百分比顯示。對於每個沉積薄膜,氬流率可能相同。在表三中,氬氣流率為120sccm。摻質的載子濃度可能低於沒有摻質的狀況。因此,摻質可用於調整載子濃度。
表四顯示含氧體對半導體薄膜的遷移率、載子濃度和電阻率的影響。一般來說,在氮氣流量固定時,當氧氣流量增加,薄膜的遷移率將增加,但當氧氣流量進一步增加時,則薄膜的遷移率將下降。對於每個沉積薄膜,氬流率可能相同。在表三中,氬氣流率為120sccm。在一實施例中,一旦含氮氣體比含氧氣體之比例小於約10:1,則薄膜的遷移率將減少。當氧氣流率增加,遷移率的增加並不相關於載子濃度的增加。當使用摻質,遷移率和載子濃度可能會降低。因此,可藉由調整摻質的量,來調整載子濃度和遷移率。
表五顯示施加的功率密度對半導體薄膜的遷移率、載子濃度和電阻率的影響。一般來說,功率密度不會大幅度影響遷移率,但較高的功率密度會產生較高的載子濃度和電阻率。在一實施例中,施加於濺射靶材的功率密度可介於約0.3W/cm2和1.0W/cm2之間。
表六顯示使用N2O作為含氧氣體,對沉積半導體薄膜的影響。該N2O氣體作為含氧氣體,以提高半導體薄膜的遷移率,以及達成一相當低的載子濃度。
表六
表七顯示半導體薄膜的化學分析,其包含:錫、氧、氮,和利用X射線光電子能譜(XPS)顯示含氧氣體的影響。施加400W直流偏壓至一濺射靶材,藉由濺射一錫靶材360秒後沉積得到薄膜1。以60sccm的流率將氬氣引入製程處理室,以200sccm的流率將氮氣引入,及以5sccm的流率將氧氣引入。沉積發生在攝氏250度的溫度。薄膜1具有:碳含量22.5原子百分比、氮含量19.4原子百分比、氧含量29.4原子百分比、氟含量0.7原子百分比、和錫含量28.1原子百分比。即使不是全部,絕大多數的碳可能來自外界的碳(即,暴露於大氣中的樣品表面所吸附的碳化合物)。施加400W直流偏壓至一濺射靶材,藉由濺射一錫靶材360秒後沉積得到薄膜2。以60sccm的流率將氬氣引入製程處理室,以200sccm的流率將氮氣引入,及以20sccm的流率將氧氣引入。沉積發生在攝氏250度的溫度。薄膜2具有:碳含量17.3原
子百分比、氮含量4.5原子百分比、氧含量49.9原子百分比、氟含量0.6原子百分比、和錫含量27.7原子百分比。即使不是全部,絕大多數的碳可能來自外界的碳(即,暴露於大氣中的樣品表面所吸附的碳化合物)。如表七,當氧流率增加(和因此,氧對氮的比例增加),則氮含量增加,錫氧化物含量亦增加。然而,錫氮化合物含量和氮氧化矽含量減少。在表七中,R等於氧氣或氮氣。
表八顯示一些藉由濺射所沉積的半導體薄膜的結果。半導體薄膜包含鋅、錫、氧、氮。從具有鋅含量70原子百分比和錫含量30原子百分比的濺射靶材,濺射沉積半導體薄膜。沉積發生在攝氏250度的溫度,施加於濺射靶材的功率為400W。在氬氣流量為60sccm和氧氣流量為20sccm下360秒沉積發生。這些數據顯示,當氮流量增加(和因此,氮對氧的比例增加),半導體薄膜的遷移率增加。
圖2A是一示意圖,其繪示氮氣流量對具有錫、氧、氮之半導體薄膜之通過率的影響。氮氣使得光學吸收邊緣移向一短波長或一較大帶隙。增加的氮流率可能導致薄膜在可視範圍更加透明。
圖2B是一示意圖,其繪示氧氣流量對具有錫、氧、氮之半導體薄膜之通過率的影響。氧氣流率愈大,則更多吸收邊緣移動到較短波長或較大帶隙。在較高的溫度下,吸收邊將移向較短波長。
圖3A和3B之XRD圖繪示一半導體薄膜之膜結構,其包含:錫、氮和氧。當氮對氧的比例增加,薄膜結構從金屬錫晶體結構變成非晶結構。圖3A顯示攝氏250度沉積的結
果。圖3B顯示攝氏150度沉積的結果。
雖然藉由濺射可能含有雜質的金屬靶材來沉積半導體薄膜之方式來敘述,應明白亦可利用其他沉積方法。在一實施例中,濺射靶材可能含有金屬、氧、和氮和,以及以一射頻電流進行偏壓。在另一實施例中,前驅物氣體可被引入一製程處理室,以藉由化學氣相沉積或ALD沉積半導體薄膜。在另一實施例中,液體前驅物可被引入一製程處理室,或者一反應物可被引入,以藉由旋轉、溶膠凝膠、或電鍍過程來沉積半導體薄膜。
半導體薄膜可用於各種裝置,如TFTs,有機發光二極體,和太陽能面板等等。可將半導體薄膜沉積至任何數目的基板,如矽晶圓、玻璃基板、鹼石灰玻璃基板、塑膠基板,基板等。基板可包括任何形狀或大小,例如,200毫米晶圓、300毫米晶圓、400毫米晶圓、平板基板、多邊形基板、捲軸式基板等。半導體薄膜可以是非結晶。在一實施例中,半導體薄膜可以是結晶的。半導體薄膜也可在沉積後退火。
當含氮氣體比含氧氣體的流量比約為10:1到50:1,則其產生的半導體薄膜具有之遷移率大於非晶矽20倍的遷移率,和多晶矽2倍的遷移率。在一實施例中,含氮氣體比含氧氣體流量比可以介於約5:1至約10:1。對沉積的半導體薄膜進行退火可增加薄膜遷移率至超過90cm2/V-s。退火可發生在溫度約攝氏400度之一氮氣環境。在高溫下,例如,大約攝氏600度,半導體薄膜可從一個n型半導體薄膜轉換為p型。半導體薄膜是穩定的,且經過一段時間其上可發展一自
然鈍化層。鈍化層可擴展成小於25埃的深度。
沉積的半導體薄膜可能具有一帶隙,其介於約3.1eV至約1.2eV,相當於大約400nm到1000nm的波長。由於具有較低的帶隙,該半導體薄膜可用於光電裝置。帶隙可以藉由改變製程參數調整,如氮對氧的流量比、功率密度、壓力、退火、和沉積溫度。藉由相對於氮氣增加氧氣供應量,可增加帶隙。半導體薄膜內的帶隙能量可分級以對整個薄膜的帶隙進行微調。例如,在半導體層的表面附近可能需要具有較高的帶隙能量,則藉由調整整個半導體層的厚度來調整帶隙能量。藉由控制氧氣流量相對於氮氣和氬氣流量之比例,可控制帶隙分佈。
包括氧、氮、與選自由下列組成的群組之一或多元素之半導體薄膜可能會更穩定和有相較於非晶矽和多晶矽來得高的遷移率:鋅、銦、鎵、鎘、和錫。因此,該半導體薄膜可取代矽作為電子裝置之主要半導體材料。
當以上文敘述本發明實施例時,亦可採取其他和進一步的實施例而不偏離其基本範疇,而其範疇係由后附申請專利範圍所決定。
100‧‧‧處理室
102‧‧‧基板
104‧‧‧靶材
106‧‧‧基座
108‧‧‧舉升梢
110‧‧‧接地帶
112‧‧‧驅動器
114‧‧‧真空泵
116‧‧‧背板
118‧‧‧磁控管
120‧‧‧黑暗空間遮板
122‧‧‧處理室遮板
124‧‧‧陽極
126‧‧‧氣體引入管
128‧‧‧耦接器
130‧‧‧支架
132‧‧‧氣體面板
Claims (17)
- 一種半導體材料,包括:氮、氧及選自由下列組成之群組之一或更多個元素:鎵、鎘、銦及錫。
- 如請求項1所述之半導體材料,其中該半導體材料包括二或更多個金屬,該二或更多個金屬選自由下列組成之群組:鋅、鎵、鎘、銦及錫。
- 如請求項1所述之半導體材料,更包含一摻質。
- 如請求項3所述之半導體材料,其中該摻質是選自由下列所組成群組:鋁、錫、鎵、鈣、矽、鈦、銅、鍺、銦、鎳、鉻、釩、鎂及它們的組合。
- 如請求項1所述之半導體材料,其中該半導體層之至少一部分包括一氮氧化合物及一氮化合物。
- 如請求項1所述之半導體材料,其中該半導體材料是非晶態或具有一奈米結晶結構。
- 一種半導體層沉積方法,包括下列步驟:將下列導入一處理室:一含氧前驅物、一含氮前驅物及選自由下列組成之群組之至少一前驅物:一鎵前驅物、一鎘前驅物、一錫前驅物以及一銦前驅物;以及在置於該處理室中的一基板上沉積一半導體層,該半導體層包括:氧、氮及選自由下列組成之群組之至少一元素:鎵、鎘、錫及銦。
- 如請求項7所述之方法,其中該半導體層包括二或更多個金屬,該二或更多個金屬選自由下列組成之群組:鋅、鎵、鎘、銦及錫。
- 如請求項7所述之方法,更包含一摻質。
- 如請求項9所述之方法,其中該摻質是選自由下列所組成群組:鋁、錫、鎵、鈣、矽、鈦、銅、鍺、銦、鎳、鉻、釩、鎂及它們的組合。
- 如請求項7所述之方法,其中該半導體層之至少一部分包括一氮氧化合物及一氮化合物。
- 如請求項7所述之方法,其中該半導體層是非晶態或具有一奈米結晶結構。
- 一種半導體材料,包括:氧、氮及具有一填滿s軌道和一填滿d軌道之一或更多個元素。
- 如請求項13所述之半導體材料,更包含一摻質。
- 如請求項13所述之半導體材料,其中該半導體材料是非晶態或具有一奈米結晶結構。
- 一種半導體層沉積方法,包括下列步驟:使一含氧氣體及一含氮氣體流至一處理室;施加一電偏壓到一濺射靶材,該濺射靶材包括具有一填滿s軌道和一填滿d軌道之一或更多個元素;以及在一基板上沉積一半導體層,該半導體層包含該一或更多個元素、氧及氮。
- 如請求項16所述之方法,其中該半導體層是非晶態或具有一奈米結晶結構。
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US20090233424A1 (en) | 2009-09-17 |
WO2009114362A1 (en) | 2009-09-17 |
TWI519659B (zh) | 2016-02-01 |
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