JP2011014884A - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
- Publication number
- JP2011014884A JP2011014884A JP2010122394A JP2010122394A JP2011014884A JP 2011014884 A JP2011014884 A JP 2011014884A JP 2010122394 A JP2010122394 A JP 2010122394A JP 2010122394 A JP2010122394 A JP 2010122394A JP 2011014884 A JP2011014884 A JP 2011014884A
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- Japan
- Prior art keywords
- semiconductor layer
- electrode
- aluminum
- photoelectric conversion
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims abstract description 234
- 239000012535 impurity Substances 0.000 claims abstract description 95
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 65
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 64
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 43
- 239000011701 zinc Substances 0.000 claims abstract description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims description 33
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 36
- 239000011787 zinc oxide Substances 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract description 16
- 239000000463 material Substances 0.000 abstract description 14
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- 239000012495 reaction gas Substances 0.000 description 19
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
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- 150000002500 ions Chemical group 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
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- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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Abstract
【解決手段】第1電極と第2電極との間に、一導電型である第1不純物半導体層と、半導体層と、第1不純物半導体層と逆導電型である第2不純物半導体層とが順に積層されて半導体接合を構成するユニットセルを1つ以上含み、第1の電極または第2の電極は、亜鉛及びアルミニウムを含む導電性酸窒化物で形成される光電変換装置である。亜鉛及びアルミニウムを含む導電性酸窒化物は、亜鉛の組成比が47原子%以下であり且つ前記アルミニウムの組成比より大きく、アルミニウムの組成比は窒素の組成比より大きく、二次イオン質量分析法により測定される窒素の濃度は、5.0×1020atoms/cm3以上である。
【選択図】図1
Description
図1に、本実施の形態に係る光電変換装置100の断面模式図の一例を示す。
本実施の形態では、上記実施の形態と異なる構成の光電変換装置を示す。具体的には、図1に示した光電変換装置と積層されるユニットセルの数が異なる例を示す。
本実施の形態では、同一基板上に複数の光電変換セルを形成し、複数の光電変換セルを直列接続して光電変換装置を集積化する、集積型光電変換装置(光電変換装置モジュール)の例を説明する。また、本実施の形態では、縦方向にユニットセルが2層積層されたタンデム型光電変換装置を集積化する例を説明する。なお、図1に示すようにユニットセルを1層を有する光電変換装置を集積化してもよいし、ユニットセルを3層以上積層した光電変換装置を集積化してもよい。以下、集積型光電変換装置の作製工程および構成の概略について説明する。
Claims (4)
- 第1電極と第2電極との間に、
一導電型である第1不純物半導体層と、
半導体層と、
前記第1不純物半導体層と逆導電型である第2不純物半導体層と、が順に積層されて半導体接合を構成するユニットセルを1つ以上含み、
前記第1の電極または前記第2の電極は、亜鉛及びアルミニウムを含む導電性酸窒化物で形成されることを特徴とする光電変換装置。 - 第1電極と、
前記第1電極上に形成される第1のユニットセルと、
前記第1のユニットセル上に形成される中間導電層と、
前記中間導電層上に形成される第2のユニットセルと、
前記第2のユニットセル上に形成される第2の電極とを有し、
前記第1のユニットセルは、
一導電型である第1不純物半導体層と、
第1の半導体層と、
前記第1不純物半導体層と逆導電型である第2不純物半導体層と、
が順に積層されて半導体接合を構成し、
前記第2のユニットセルは、
一導電型である第3不純物半導体層と、
第2の半導体層と、
前記第3不純物半導体層と逆導電型である第4不純物半導体層と、
が順に積層されて半導体接合を構成し、
前記第1の電極、第2の電極、または中間導電層は、亜鉛及びアルミニウムを含む導電性酸窒化物で形成されることを特徴とする光電変換装置。 - 請求項1または2において、
前記亜鉛及びアルミニウムを含む導電性酸窒化物は、
前記亜鉛の組成比が、47原子%以下であり且つ前記アルミニウムの組成比より大きく、 前記アルミニウムの組成比が窒素の組成比より大きく、
二次イオン質量分析法により測定される前記窒素の濃度が、5.0×1020atoms/cm3以上である
ことを特徴とする光電変換装置。 - 請求項1または2において、
前記亜鉛及びアルミニウムを含む導電性酸窒化物は、
前記亜鉛の組成比が47原子%以下であり、且つ前記アルミニウムの組成比より大きく、
前記アルミニウムの組成比が窒素の組成比より大きく、
1.0原子%乃至8.0原子%の前記アルミニウムを含み、且つ0.5原子%乃至4.0原子%の窒素を含む
ことを特徴とする光電変換装置。
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US8772627B2 (en) * | 2009-08-07 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
US9076909B2 (en) | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
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