TW201034798A

TW201034798A - Glass substrate and its production method

Info

Publication number: TW201034798A
Application number: TW099106957A
Authority: TW
Inventors: Koichi Shimotsu; Hiroyuki Nakatsu; Taiki Minari; Yuji Takahashi; Michiharu Eta; Hisatoshi Aiba
Original assignee: Nippon Electric Glass Co
Priority date: 2009-03-10
Filing date: 2010-03-10
Publication date: 2010-10-01
Also published as: KR101707056B1; CN102341214B; TWI480127B; KR20110139188A; CN102341214A

Abstract

A glass substrate 1 has a face 2a, an inner face 2b, and an end face 3b existing between the outer peripheral ends of the faces 2a and 2b. In the glass substrate 1, a beveling face 4 is formed on a boundary portion between at least one of the faces 2a, 2b and the end face 3b. The ten-point height of irregularities Rz2 of the beveling face 4 is smaller than the ten-point height of irregularities Rz1 of the end face 3b. Furthermore, the average length RSm2 of the roughness curve ingredient of the beveling face 4 is larger than the average length RSm1 of the roughness curve ingredient of the end face. Preferably, the ten-point height of irregularities Rz2 of the beveling face 4 and the ten-point height of irregularities Rz1 of the end face 3b satisfy a relation of Rz2 ≤ 1.5 μ m and 1.5 ≤ Rz1/Rz2 ≤ 10.0.

Description

201034798 六、發明說明：【發明所屬之技術領域】本發明是有關於一種將表面及背面、與存在於上述兩面的外周端彼此間的端面之間的邊界部的面性狀予以優化而成的玻璃基板及其製造方法。【先前技術】如眾所周知般，近年來，圖像（影像）顯示裝置中，以液晶顯示器（Liquid Crystal Display，LCD )、電漿顯示器（Plasma Display )(電衆顯示面板，plasma Display[Technical Field] The present invention relates to a glass obtained by optimizing a surface property of a boundary portion between a front surface and a back surface and an end surface existing between outer peripheral ends of the both surfaces. Substrate and method of manufacturing the same. [Prior Art] As is well known, in recent years, in an image (image) display device, a liquid crystal display (LCD), a plasma display (Plasma Display) (electrical display panel, plasma display)

Panel ’ PDP)、場發射顯示器（Field Emission Display， FED)、有機電致發光（eiectr〇iurninescent，el)顯示器（有機發光二極體，Organic Light Emitting Diode，OLED)等為代表的平板顯示器（Flat Panel Display，FPD )成為主流。又’有機EL並非如OLED般藉由薄膜電晶體（Thin Film Transistor，TFT)而閃爍微細的三原色，而是僅以單色（例如白色）發光來亦用作LCD的背光源（backlight)或室内照明的光源等的平面光源。上述FPD或照明均是藉由在玻璃基板的表面上附設包含各個元件或配線的各種構成物等並加以組合而構成。尤其是，自提高生產率的觀點考慮，對FPD進行如下的所謂的多數獲取：於一個大型玻璃基板上形成多個FPD用面板元件等，最後將該等FPD用面板元件等適當地加以分割而形成各個FPD用玻璃面板（glass panel)。該多數獲取中’伴隨於玻璃基板的大型化而使效率提高，因此，甚至 201034798Panel 'PDP), Field Emission Display (FED), organic electroluminescence (electr〇iurninescent, el) display (Organic Light Emitting Diode, OLED), etc. Panel Display (FPD) has become mainstream. In addition, 'organic EL is not like the OLED, which is a sub-primary color of a thin film transistor (TFT), but is only used in a single color (for example, white) to be used as a backlight or indoor of an LCD. A planar light source such as a light source for illumination. Each of the FPD and the illumination is configured by attaching various components including the respective elements or wirings to the surface of the glass substrate and combining them. In particular, the FPD is subjected to a so-called majority acquisition in which a plurality of FPD panel elements are formed on one large glass substrate, and finally, the FPD panel elements and the like are appropriately divided and formed. A glass panel is used for each FPD. In the majority of acquisitions, the efficiency is increased with the increase in the size of the glass substrate, and therefore, even 201034798

L 可使用一邊的長度超過3 m的玻璃基板。進而，近年來，正在推進FPD本身的大型化，因此，為了適應於阻止重量增加的要求，作為玻璃基板而必須為壁更薄的玻璃基板。又，該種玻璃基板除上述的FPD或有機E 至亦可用作太陽電池的玻璃基板。 * 而且，在上述的FPD、有機EL照明、以及太陽電池的製造步驟中，存在例如自壓盤來提昇玻璃基板的步驟或進行熱處理的步驟，上述步驟中，於提昇玻璃基板時會產 ^ 生如下所示的問題。即，若玻璃基板的尺寸不斷大型化及薄壁化，則提昇時會產生極大的彎曲，於因上述彎曲而變凸的面上作用著拉伸應力，並且於變凹的面上作用著壓縮應力。於此情形時，玻璃基板具有如下形態，即，表面及背面、以及存在於該兩面的外周端彼此間的端面分別經由邊界部而連接，但在玻璃基板彎曲時，該應力將集中於上述邊界部。因此，當玻璃基板彎曲時，在變凸的表面或背面與連接於表背面〇 ❸端_邊界部周邊，將產生較大陳伸應力。因此，若於玻璃基板的表背兩面與端面的各邊界部周邊存在傷痕、裂痕或者異物等的微小缺陷，則當玻璃基板彎曲時會在該缺陷附近產生大的拉伸應力，並且會於該缺陷處發生應力集中，從而微小缺陷將擴大而一下子致使玻璃基板破^。即使於上述玻璃基板的熱處理步驟中，亦會產生與上述同樣的問題。即’玻璃基板伴隨溫度上升而膨脹並I伴隨溫度下降而收縮，但若在熱處理步驟中於玻璃基板上發 5 201034798 ^不當的^讀，齡在-個_基㈣發生膨縣收從而¥致拉伸應力與壓縮應力混在—起。於此情形時，若在玻璃基板喊背_與端面的邊界部周邊存^微小缺陷、且在該邊界部上產生㈣應力，财於職小缺陷上發生應力集中而致使玻璃基板破損。該種玻璃基板藉由分割而形成為所需的大小，作為該玻璃基板的分割方法…般而謂用如下的所謂的折^ 利用鑽石晶片（diamond ehip )等在破璃基板的表面刻設割線（scribe line)，㈣該劃線作用拉伸應力的方式而施加力，從而將玻璃基板切斷。該種分割方法中，在分卹後的玻璃基板的表背兩面與端面的邊界部上，會產生無數的微小缺陷’因此’如上所述，當玻璃基板彎曲時或熱處理時，該玻璃基板破損的概率增大。為了應對上述問題，根據專利文獻丄、2而記載有如下情形.對玻璃基板的表背兩面與端面的邊界部實施研磨處理而形成倒角面’並且使研磨後的倒角面比端面更平滑。詳細而言’根據專利讀丨而記載有如下情形：較好的是，玻璃基板的端面相對於表背兩面而成直角，並且該端面的表©最大凹凸小於等於__且倒角面的表面最大凹凸小於等於議7 mm。又，根據專利文獻2而記載有如下情形：較好的是’玻璃基板的端面自表背兩面的外周端彎曲而向外側突出’並·端面的表面最大凹凸小於等於0_04mm且倒角面的表面最大凹凸小於等於〇〇〇7議。 [先行技術文獻] 201034798 [專利文獻] [專利文獻1]日本專利特開平9-278466號公報 [專利文獻2]日本專利特開平9_278467號公報然而，專利文獻卜2所記載的玻璃基板為強化玻璃，因此對於未實施強化處理的玻璃基板，即便與上述各文獻 .同樣地進行形成倒角面的處理，當玻璃基板產生彎曲或不當的溫度分佈時，亦無法確實地避免導致玻璃基板破損的問題。即，可說上述各文獻所記載的倒角面並非為可較佳地適用於包含上述所列舉的用途中所使用的玻璃基板在内的任一種玻璃基板的面性狀。而且上述各文獻所記載的玻璃基板的倒角面的面性狀疋以表面最大凹凸為參數（parameter )而規定的面性狀，基於該種規定的面性狀如上所述，無法確實地阻止玻璃^板的破損。即，不能說以表面最大凹凸作為參數的情形時本身為最佳，因此即便倒角面的面性狀滿足上述各文獻所記载的規定，亦無法確切地應對因基板的彎曲或不當〇的溫度分佈而導致的玻璃基板的破損。進而，若為上述各文獻中所規定的倒角面的面性狀，則亦有可能導致如下不良情況：在端面研磨時產生並附著於玻璃基板表面的玻璃微粒（glassparticle)等在清洗步驟中容易滞留於倒角面上。而且，會因此而導致在乾燥步驟中成為玻璃微粒等附著於玻璃基板表面的狀態，從而亦會導致玻璃基板品質下降的致命缺陷。另外，除藉由所述的折割而分割玻璃基板的情形以 7 201034798 外’在例如以下情形巾亦會同録生如上所述的問題，該情形為：對於如雷射靖等使用f射來分獅朗基板，在該玻璃基板^邊界部上形成藉由研磨而得的倒角面。而且，不管發生如上所述的問題的可能性是無法否定的’實際情況是就先前用以適當規定玻璃基板的面性狀的具體方法而言’並未發現最佳方法。【發明内容】本發明鑒於上述情形而以下述作為技術性課題：將自玻璃基板絲面及背面而跨過端_邊界面（懒面）的面性狀優化’藉此無論是否實施了触處理，均可確實地 =止因玻璃基板的彎曲或不當的溫度分佈而導致發生破損’並且亦解決玻璃微粒的問題。為解決上述技術性課題而發明的第i發明是一種玻璃包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面中的至少-個面與上述端面之間的邊界部上形成著倒角面，該倒角面的微觀不平度的十點高度(tenp〇mt娜〇f =eguiamles)RZ2小於上述端面的微觀不平度的十點高度 RZl，且該倒角面的粗韃度曲線要素的平均長度跑2大於上述端面的粗糙度曲線要素的平均長度似叫。另外，關 ^表面粗财，使贱京精密公司製造的恤議驅來進行測定（以下同樣）。又，此處微觀不平度的十點高度 ZJ1S( Zi、RZ2)以及粗糙度曲線要素的平均長度 RSm mi、RSm2)是依據日本工業標準㈤，了叩_e 201034798 c industry standard > ) B0601 : 2001 (以下同樣）。進而，所謂「倒角面」是指對該邊界部實施倒角加工而得的倒角部的表面（以下同樣）。L A glass substrate with a length of more than 3 m on one side can be used. Further, in recent years, the size of the FPD itself has been increasing. Therefore, in order to meet the demand for preventing an increase in weight, it is necessary to use a glass substrate having a thinner wall as a glass substrate. Moreover, such a glass substrate can be used as a glass substrate of a solar cell in addition to the above-mentioned FPD or organic E. * In the above-described FPD, organic EL illumination, and solar cell manufacturing steps, there are, for example, a step of lifting the glass substrate from the platen or a step of performing heat treatment, and in the above steps, the glass substrate is produced. The problem is as shown below. In other words, when the size of the glass substrate is increased in size and thickness, great bending occurs during lifting, tensile stress acts on the surface which is convex due to the above bending, and compression acts on the concave surface. stress. In this case, the glass substrate has a configuration in which the front surface and the back surface and the end faces existing between the outer peripheral ends of the both surfaces are connected via the boundary portion, but when the glass substrate is bent, the stress is concentrated on the boundary. unit. Therefore, when the glass substrate is bent, a large tensile stress is generated on the surface or the back surface which is convex, and the periphery of the boundary portion which is connected to the front and back sides. Therefore, when there are minute defects such as scratches, cracks, or foreign matter on the boundary between the front and back surfaces of the glass substrate and the end surface, a large tensile stress is generated in the vicinity of the defect when the glass substrate is bent, and Stress concentration occurs at the defect, so that the minute defect will expand and the glass substrate will be broken. Even in the heat treatment step of the above glass substrate, the same problems as described above occur. That is, the glass substrate expands with the temperature rise and I shrinks with the temperature drop. However, if the heat treatment step is performed on the glass substrate 5 201034798 ^ Improper reading, the age is in the - _ base (four) The tensile stress is mixed with the compressive stress. In this case, if a small defect is formed around the boundary portion between the glass substrate and the end surface, and (4) stress is generated at the boundary portion, stress concentration occurs in the small defect, and the glass substrate is damaged. Such a glass substrate is formed into a desired size by division, and as a method of dividing the glass substrate, a slash is formed on the surface of the glass substrate by a diamond ehip or the like as follows. (scribe line), (4) The scribe line exerts a force by applying a tensile stress to cut the glass substrate. In this type of division method, in the boundary portion between the front and back surfaces of the glass substrate after the shirting, there are numerous minute defects. Therefore, as described above, when the glass substrate is bent or heat-treated, the glass substrate is broken. The probability increases. In order to cope with the above problems, there is a case in which the boundary between the front and back surfaces of the glass substrate and the end surface is subjected to a rubbing treatment to form a chamfered surface and the chamfered surface after grinding is smoother than the end surface. . In detail, 'there is a case in which the end surface of the glass substrate is formed at a right angle with respect to both sides of the front and back sides, and the maximum unevenness of the surface of the end surface is less than or equal to __ and the surface of the chamfered surface is described in detail. The maximum bump is less than or equal to 7 mm. Further, according to Patent Document 2, it is preferable that the end surface of the glass substrate is bent from the outer peripheral end of both the front and back surfaces and protrudes outward, and the surface of the end surface has a maximum unevenness of 0_04 mm or less and a surface of the chamfered surface. The maximum bump is less than or equal to 〇〇〇7. [Patent Document 1] [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 9-278466 (Patent Document 2) Japanese Laid-Open Patent Publication No. Hei 9-278467. However, the glass substrate described in Patent Document 2 is a tempered glass. Therefore, even if the glass substrate which is not subjected to the strengthening treatment is subjected to the treatment of forming the chamfered surface in the same manner as in the above-mentioned respective documents, when the glass substrate is bent or has an improper temperature distribution, the problem of causing damage to the glass substrate cannot be reliably avoided. . In other words, it can be said that the chamfered surface described in each of the above documents is not preferably applicable to the surface properties of any of the glass substrates including the glass substrate used in the above-mentioned applications. In addition, the surface properties of the chamfered surface of the glass substrate described in each of the documents described above are defined by the maximum surface unevenness as a parameter, and the surface properties of the glass substrate are not reliably prevented by the above-described predetermined surface properties. Broken. In other words, it cannot be said that the maximum surface unevenness is used as a parameter. Therefore, even if the surface property of the chamfered surface satisfies the specifications described in the above documents, the temperature due to bending or improper enthalpy of the substrate cannot be accurately dealt with. Damage to the glass substrate caused by the distribution. Further, in the case of the surface properties of the chamfered surface defined in each of the above documents, there is a possibility that the glass particles which are generated during the end surface polishing and adhere to the surface of the glass substrate are easily removed in the cleaning step. Stay on the chamfered surface. Further, as a result, glass fine particles or the like adhere to the surface of the glass substrate in the drying step, which may cause fatal defects in deterioration of the quality of the glass substrate. In addition, except for the case where the glass substrate is divided by the folding described above, the problem described above is also recorded in the case of, for example, the following case, which is: for example, using a f-shot such as a laser The lion's substrate is divided into a chamfered surface obtained by grinding on the boundary portion of the glass substrate. Moreover, the possibility that the above-mentioned problem occurs cannot be denied. The actual situation is that the best method has not been found in the conventional method for appropriately specifying the surface properties of the glass substrate. SUMMARY OF THE INVENTION The present invention has been made in view of the above-described circumstances as a technical problem of optimizing the surface properties of the surface of the glass substrate and the back surface over the end-boundary surface (lazy surface), thereby whether or not the touch treatment is performed. It is possible to surely stop the occurrence of breakage due to bending or improper temperature distribution of the glass substrate and also solve the problem of glass particles. According to a first aspect of the invention, in which the glass includes a front surface and a back surface, and an end surface existing between the outer peripheral ends of the both surfaces, the glass substrate is characterized in that at least one of the surface and the back surface A chamfered surface is formed on a boundary portion between the surface and the end surface, and a ten-point height of the microscopic unevenness of the chamfered surface (tenp〇mtna〇f=eguiamles) RZ2 is smaller than a ten-point height of the microscopic unevenness of the end surface RZ1, and the average length of the rough curve element of the chamfered surface is 2, which is larger than the average length of the roughness curve element of the end face. In addition, the surface of the company was driven by a company that was made by the company, and the measurement was carried out (the same applies hereinafter). Moreover, the ten-point height of the microscopic unevenness ZZ1S (Zi, RZ2) and the average length of the roughness curve elements RSm mi, RSm2) are based on Japanese Industrial Standards (V), 叩_e 201034798 c industry standard > ) B0601 : 2001 (the same below). Further, the "chamfered surface" refers to the surface of the chamfered portion obtained by chamfering the boundary portion (the same applies hereinafter).

根據上述構成，不僅玻璃基板的表面及背面中的至少一個面與端面之間的邊界部上所形成的倒角面的微觀不平度的十點高度小於端面的微觀不平度的十點高度，該倒角面的粗糙度曲線要素的平均長度亦大於端面的粗糙度曲線要素的平均長度。如此，以微觀不平度的十點高度Rzjis 及粗糙度曲線要素的平均長度RSm為參數，而對倒角面的面性狀與端面的面性狀的關係加以規定，藉此可有效地避免如下不良情況：以該邊界部為起點而產生缺損或裂痕，從而導致玻璃基板缺損或破損；玻璃片或玻璃微粒自該邊界部剝離去除；在清洗步驟中玻璃微粒等滯留於該邊界部上；以及在乾燥步驟中玻璃微粒等附著於玻璃基板的表面而導致xm質下降等。而且，該第丨發明的玻璃基板無論實施或不實施強化處理（熱處理），均可獲得如上所述的優勢。於該第一知月中，較好的是上述倒角面的微觀不平度的十點同度Rz2及上述端面的微觀不平度的十點高度％滿足Rz2Slj㈣、且！ 5$Rzi/Rz2㈣〇的關係。如，藉自使上述邊界部上所形成的㈣面的微觀不平度的十點高度RZ2小於等於15 _，而更確實地抑制起點的破璃基板的破損等，並使端面周邊的裒^又升，並且亦可更有效地避免於該邊界部上產生 201034798 或滯f玻璃微粒等㈣題。而且，若端面的微觀不平度的十點高度尺心除以倒角面的微觀不平度的十點高度而得的值（RzyRz2)小於1.5，則由形成著倒角面而帶來的端面周邊的破壞強度的上升效果減少。相對於此，#叫私超過1G.G，則倒角面與端面的祕度之差增大，於該兩面的邊界上有可能會因新的應力集中而引起破損。因此，較好的是Rzi/Rz2處於上述數值範圍内。又，於該第1發明中，較好的是上述指定研磨面的粗链度曲線要素的平均長度心2滿足恤⑷⑻_的關若如此，則可更有效地避免以該邊界部為起點的玻璃破鮮、以及於該邊界部上產生或滞留玻璃微粒等其是藉由心2㈣_，而使倒角面的起伏二期）增大，表面積受到抑制，因此可有效二Γ:=著於有效面(表面)上的不良情況。於是減度轉要料平均長度之比、即 3 〇 2从等於0·1且小於等於〇.7。即，若RSml/RSm2 二兩倒角面的起伏凹凸的間隔之差增大， =兩者的邊界上表面性狀將急劇變化，因此損Γ。相對於此，若RSmi/Rs叫超過〇.7， ’起伏凹凸的間隔之差減小，結果，未稭由倒角面的形成而高效地的上升效果將變得不充分。因此凸;^破=度處於上述數值範_。崎的疋RSmi/RSm2 10 201034798 為解決上述技術性課題而發明的第2發明是一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的溝痕深度Rvk滿足Rvk^〇 95从瓜的關係。此處，溝痕深度Rvk是依據JIS B0671-2 : 2002 (以下同樣）。根據該種構成，玻璃基板的邊界部上所形成的倒角面 0 的面性狀是使用溝痕深度Rvk作為參數來進行規定，而且規疋為該Rvk小於等於0.95 //m，由於玻璃基板具有該種倒角面，因此可儘可能地抑制因該玻璃基板的彎曲或不當的溫度分佈而導致破損、以及因玻璃微粒而導致品質下降的問題。即，溝痕深度Rvk成為如下的指標的值，該指標表示較面的平均凹凸更深的部分為哪種程度，且該值越大，則越存在異常深的谷部分。而且，若邊界部為具有該種異常谷部分的面性狀，則當因彎曲或不當的溫度分佈而導致該邊界部上產生拉伸應力時，在異常深的谷部分上會〇發生應力集中，因此容易發生破損，並且玻璃微粒將容易殘存並滯留在該異常深的谷部分。然而，若如上所述邊界部上所形成的倒角面的溝痕深度Rvk小於等於0 95从 m，則邊界部上不存在異常深的谷部分，因此於邊界部上即便作用有拉伸應力，亦不易發生應力集中，並且不易殘存並滞留玻璃微粒。另外，自上述觀點考慮，更好的是邊界部上所形成的倒角面的溝痕深度Rvk小於等於〇 2〇 " m。又，有效的是玻璃基板的邊界部的溝痕深度Rvk小於 11 201034798 因玻璃基板C接的端面的溝痕深度g。即，在的内部產生應3或不當的溫度分料導致在該玻璃基板近。因此，：使二：明上述應力最容易產生於邊界部附度趾，則自容㈣=溝痕賴Rvk小於端面的溝痕深集中的異常深界部起，導™ ==或不當的溫度分佈而導致的破損，而且，板的端粒殘存並滯留的問題。另外，即便玻璃基糾小於邊界部_肖_溝痕深度。就面性狀的觀點考慮雖會成為超級品質，但不會在破損或玻璃微粒的問題方面造成妨礙。而且，該第2;月的玻璃基板巾亦為無4實施或不實施強化處理（熱強化處理），均可獲得如上所述的優點。為解決上述技術性課題而發明的第3發明是一種玻璃基板，包括表面及背®、以及存在於該兩_外周端彼此間的端面，該玻璃基板的特徵在於··在上述表面及背面中的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的粗糙度曲線的均方根斜率RAq滿足R^q〈 0.10的關係。此處，粗糙度曲線的均方根斜率RAq是依據 JISB0601-2001 (以下同樣）。根據該種構成，玻璃基板的邊界部上所形成的倒角面的面性狀是使用粗糙度曲線的均方根斜率作為參數來進行規定，而且規定為該RZ\q小於等於0.10，由於玻璃基板具有該種倒角面’因此可儘可能地抑制因該玻璃基 12 201034798 板=·彎曲或不當的溫度分佈而導致破損、以及因破璃微粒而導致品質下降的問題。即，粗糖度曲線的均方根斜率r △q是粗糙度曲線上的各凹部以及各凸部的相對於該面的 ❹ ms值，因此’該值越大，則凹凸的傾斜越 +為p，思味著谷底成尖銳的形狀的凹部較多。而且，若邊界部為該種性狀的倒角面，則當因料分佈而導致該邊界部上產生㈣應力時，於形狀的凹部上發生應力針，因此容祕生破損n Ο 凹部上容㈣存赠留㈣微粒。然而，若如上所述邊界部上所形成的倒肖面的粗糙度轉的均雜斜率r 於等於0.10 ’則邊界部上具有尖銳的谷底的凹部將減少至不會成為問題的程度’因此於邊界部上即便作用有拉伸應亦難以發生應力集中，並且_殘存並滯留玻璃微粒。另外，就上述觀點考慮，更好的是邊界部上所形成的倒角面的粗链度曲線的均方根斜率RAq小於等於⑽。而且，有效的是玻喊板的邊界面的粗财崎的均方根斜率R △ q小於與該邊界面連接的端面的粗輪度曲線的均方根斜率RAq。即，於因玻璃基板的彎曲或不當的溫度分佈而導致在該玻璃基板的内部產生應力時，判明上述應力最容產生於邊界部附近。因此，只要邊界部的粗糖度曲線的均方根斜率RAq小於端面的粗縫度曲線的均方根斜率Μ q’則自容易產生應力集中的邊界部起，導致該應力集中谷底尖銳的凹部減少。其結果，可儘可能地降低因板的彎曲或不當的溫度分佈而導致的破損，而且，亦可ς 13 201034798 免玻璃微粒殘存並滯留的問題。另外，即便玻璃基板的端面的粗糙度曲線的均方根斜率R^q小於邊界部的倒角面的粗链度曲線的均方根斜率R^q’就面性狀的觀點考慮雖然會成為超級品質，但不會在破損或玻璃微粒的問題方面造成妨礙。而且，該第3發明的玻璃基板中，亦為無論實施或不實施強化處理（熱強化處理），均可獲得如上所述的優點。為解決上述技術性課題而發明的第4發明是一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面中的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的最大谷深Rv滿足2.0 // m的關係。此處，最大谷深Rv是依據JIS B0601-2001 (以下同樣）。根據該種構成，玻璃基板的邊界部上所形成的倒角面的面性狀是使用最大谷深rv作為參數來規定，而且規定為该RV小於等於2·〇 #m，由於玻璃基板具有該種倒角面，因此可儘可能地抑制因該玻璃基板的彎曲或不當的溫度分佈而導致破損、以及因玻璃微粒而導致品質下降的問喊即，於表示上述倒角面的性狀的粗f造度曲線中存在有峰部與谷部，當谷部較深時，若因彎曲或熱而引起的拉伸 f力作用於倒角面上，則將於該谷底發生應力集中而使谷部被撕裂，由此導致谷部的撕裂不斷進展，藉此致使玻璃，板破損。然而，若如上所述倒角面的最大谷深Rv小於等於2.0 /zm，則倒角面中不會存在因熱或彎曲所引起的 14 201034798 拉伸應力而導致撕裂不斷進展般的深度的谷部，從而不僅難以發生玻璃基板的破指，且難以於谷部殘存並滞留玻璃According to the above configuration, not only the ten-point height of the microscopic unevenness of the chamfered surface formed on the boundary portion between at least one of the front surface and the back surface of the glass substrate but the microscopic unevenness of the end surface is less than ten points. The average length of the roughness curve elements of the chamfered surface is also greater than the average length of the roughness curve elements of the end face. In this way, the ten-point height Rzjis of the microscopic unevenness and the average length RSm of the roughness curve element are used as parameters, and the relationship between the surface property of the chamfered surface and the surface property of the end surface is defined, whereby the following problems can be effectively avoided. : a defect or a crack is generated from the boundary portion, thereby causing the glass substrate to be damaged or broken; the glass piece or the glass particle is peeled off from the boundary portion; the glass particles and the like are retained on the boundary portion in the cleaning step; and being dried In the step, glass fine particles or the like adhere to the surface of the glass substrate to cause a decrease in xm quality or the like. Further, the glass substrate of the second invention can achieve the advantages as described above regardless of whether or not the strengthening treatment (heat treatment) is carried out or not. In the first known month, it is preferable that the ten-degree homomorphism Rz2 of the microscopic unevenness of the chamfered surface and the ten-point height % of the microscopic unevenness of the end surface satisfy the Rz2Slj (four), and! 5$Rzi/Rz2 (four) 〇 relationship. For example, the ten-point height RZ2 of the microscopic unevenness of the (four) surface formed on the boundary portion is less than or equal to 15 _, and the damage of the glass substrate at the starting point is more reliably suppressed, and the periphery of the end surface is further suppressed. l, and can also more effectively avoid the occurrence of 201034798 or stagnation of glass particles (4) on the boundary. Further, if the value of the ten-point height of the microscopic unevenness of the end face divided by the ten-point height of the microscopic unevenness of the chamfered surface (RzyRz2) is less than 1.5, the periphery of the end face is formed by the chamfered surface. The effect of the increase in the strength of the damage is reduced. On the other hand, when the private number exceeds 1G.G, the difference between the secret angle of the chamfered surface and the end surface increases, and the boundary between the two surfaces may be damaged due to new stress concentration. Therefore, it is preferable that Rzi/Rz2 is within the above numerical range. Further, in the first aspect of the invention, it is preferable that the average length core 2 of the thick chain curve element of the predetermined polishing surface satisfies the condition of the shirt (4) (8)_, so that the boundary portion can be more effectively avoided. The glass is broken, and the glass particles or the like are generated or retained on the boundary portion by the heart 2 (four) _, and the undulation of the chamfered surface is increased, and the surface area is suppressed, so that it is effective: Bad conditions on the surface (surface). Therefore, the ratio of the average length of the reduction to the required material, that is, 3 〇 2 is equal to 0·1 and less than or equal to 〇.7. In other words, if the difference between the intervals of the undulations of the two chamfered surfaces of RSml/RSm2 increases, the surface properties of the boundary between the two will change abruptly, and thus the damage will occur. On the other hand, when RSmi/Rs is more than 〇.7, the difference in the interval between the undulations and the unevenness is reduced, and as a result, the effect of efficiently raising the stalk without the formation of the chamfered surface is insufficient. Therefore, the convexity; ^ breaking = degree is in the above numerical range _.崎疋 RSmi/RSm2 10 201034798 A second invention invented to solve the above-described technical problems is a glass substrate comprising a front surface and a back surface, and an end surface existing between the outer peripheral ends of the both surfaces, the glass substrate being characterized by: A chamfered surface is formed on a boundary portion between at least one of the surface and the back surface and the end surface, and the groove depth Rvk of the chamfered surface satisfies the relationship of Rvk^95 from the melon. Here, the groove depth Rvk is based on JIS B0671-2: 2002 (the same applies hereinafter). According to this configuration, the surface property of the chamfered surface 0 formed on the boundary portion of the glass substrate is defined by using the groove depth Rvk as a parameter, and the Rvk is equal to or greater than 0.95 //m, since the glass substrate has Since such a chamfered surface can suppress damage due to bending or improper temperature distribution of the glass substrate as much as possible, and deterioration in quality due to glass fine particles. In other words, the groove depth Rvk is a value of an index indicating how much the deeper average unevenness is, and the larger the value, the more abnormally deep valley portion. Further, if the boundary portion has a surface property having such an abnormal valley portion, when tensile stress is generated at the boundary portion due to bending or improper temperature distribution, stress concentration occurs in the abnormally deep valley portion. Therefore, breakage easily occurs, and the glass particles tend to remain and remain in the abnormally deep valley portion. However, if the groove depth Rvk of the chamfered surface formed on the boundary portion is less than or equal to 0 95 from m as described above, there is no abnormally deep valley portion on the boundary portion, and therefore even tensile stress acts on the boundary portion. It is also less prone to stress concentration and it is not easy to remain and retain glass particles. Further, from the above viewpoints, it is more preferable that the groove depth Rvk of the chamfered surface formed on the boundary portion is equal to or less than 〇 2〇 " m. Further, it is effective that the groove depth Rvk at the boundary portion of the glass substrate is smaller than the groove depth g of the end surface of the glass substrate C which is connected to the surface of the glass substrate C. That is, the internal temperature generated in the 3 or improper temperature is caused to be near the glass substrate. Therefore, it is said that the above stress is most likely to occur at the boundary toe of the boundary, and then the self-capacity (four) = the groove is determined to be smaller than the abnormal deep portion of the groove where the groove is deep, and the TM == or improper temperature The damage caused by the distribution, and the problem that the telomeres of the plate remain and remain. In addition, even if the glass base is corrected, it is smaller than the boundary portion _ _ groove depth. Although the viewpoint of the face properties is super quality, it does not interfere with the problem of breakage or glass particles. Further, the glass substrate of the second month is also provided with or without the strengthening treatment (heat strengthening treatment), and the advantages as described above can be obtained. According to a third aspect of the invention, in order to solve the above-mentioned technical problems, a glass substrate includes a surface and a back surface, and an end surface existing between the two outer peripheral ends, wherein the glass substrate is characterized by being in the surface and the back surface. A chamfered surface is formed on a boundary portion between the at least one surface and the end surface, and a root mean square slope RAq of the roughness curve of the chamfered surface satisfies a relationship of R^q<0.10. Here, the root mean square slope RAq of the roughness curve is based on JIS B0601-2001 (the same applies hereinafter). According to this configuration, the surface property of the chamfered surface formed on the boundary portion of the glass substrate is defined by using the root mean square slope of the roughness curve as a parameter, and it is defined that the RZ\q is 0.10 or less due to the glass substrate. With such a chamfered surface, it is possible to suppress as much as possible the damage caused by the temperature distribution of the glass base 12 201034798 plate = bending or improper, and the deterioration of quality due to the glass particles. That is, the root mean square slope r Δq of the coarse sugar curve is the value of each concave portion on the roughness curve and the ❹ ms value of each convex portion with respect to the surface, so that the larger the value, the more the inclination of the unevenness is +p I think that there are more recesses in the shape of the bottom of the valley. Further, if the boundary portion is a chamfered surface of the nature, when a stress is generated on the boundary portion due to the distribution of the material, a stress pin is generated on the concave portion of the shape, so that the damage is caused by the damage n Ο the concave portion is filled (4) Save and leave (four) particles. However, if the uniform slope r of the roughness of the inverted face formed on the boundary portion is equal to 0.10' as described above, the concave portion having the sharp valley bottom at the boundary portion is reduced to such an extent that it does not become a problem. Even if tensile action is applied to the boundary portion, stress concentration is unlikely to occur, and _ residual and retained glass particles. Further, from the above viewpoints, it is more preferable that the root mean square slope RAq of the thick chain curve of the chamfered surface formed on the boundary portion is equal to or less than (10). Further, it is effective that the root mean square slope R Δ q of the coarse sag of the boundary surface of the glass plate is smaller than the root mean square inclination RAq of the rough radiance curve of the end face connected to the boundary surface. That is, when stress is generated in the inside of the glass substrate due to bending of the glass substrate or improper temperature distribution, it is found that the above stress is most likely to occur in the vicinity of the boundary portion. Therefore, as long as the root mean square slope RAq of the coarse sugar curve of the boundary portion is smaller than the root mean square slope Μ q' of the rough seam curve of the end face, the boundary portion where the stress concentration is likely to occur is caused, and the stress concentration of the bottom portion of the valley is sharply reduced. . As a result, damage due to bending or improper temperature distribution of the sheet can be reduced as much as possible, and the problem that the glass particles remain and remain can be avoided. Further, even if the root mean square slope R^q of the roughness curve of the end surface of the glass substrate is smaller than the root mean square slope R^q' of the thick chain curve of the chamfered surface of the boundary portion, the surface property is considered to be super Quality, but it does not interfere with the problem of breakage or glass particles. Further, in the glass substrate of the third invention, the above-described advantages can be obtained regardless of whether or not the strengthening treatment (heat strengthening treatment) is carried out or not. According to a fourth aspect of the invention, there is provided a glass substrate comprising: a front surface and a back surface; and an end surface existing between the outer peripheral ends of the both surfaces, wherein the glass substrate is characterized in that at least the surface and the back surface A chamfered surface is formed on a boundary portion between the one surface and the end surface, and the maximum valley depth Rv of the chamfered surface satisfies a relationship of 2.0 // m. Here, the maximum valley depth Rv is based on JIS B0601-2001 (the same applies hereinafter). According to this configuration, the surface property of the chamfered surface formed at the boundary portion of the glass substrate is defined by using the maximum valley depth rv as a parameter, and the RV is equal to or less than 2·〇#m, which is due to the glass substrate. Since the chamfered surface is used as much as possible, it is possible to suppress the damage caused by the bending or improper temperature distribution of the glass substrate and the deterioration of the quality due to the glass fine particles, that is, the roughness of the property indicating the chamfered surface. There are peaks and valleys in the degree curve. When the valley is deep, if the tensile force due to bending or heat acts on the chamfered surface, stress concentration will occur at the bottom of the valley and the valley will be The tearing causes the tearing of the valley to progress, thereby causing damage to the glass and the board. However, if the maximum valley depth Rv of the chamfered surface is less than or equal to 2.0 /zm as described above, there is no tensile depth in the chamfered surface due to the tensile stress of 14 201034798 caused by heat or bending. In the valley, it is not only difficult to break the glass substrate, but it is difficult to remain in the valley and retain the glass.

即’於因玻璃基板的彎曲或不當的溫度分佈而導致在該玻璃基板的内部產生應力時，判明上〇述應力最容易產生於邊界部附近。因此，只要邊界部（倒角面）的最大谷深Rv小於端面的最大谷深Rv，則自容易發生應力集中的邊界部起，導致該應力集中的較深的谷部將減少或消失。其結果，可儘可能地降低因玻璃基板的彎曲或不當的溫度分佈而導致的破損，而且，亦可避免玻璃微粒殘存並滯留的問題。另外，即便玻璃基板的端面的最大谷深Rv小於邊界部的倒角面的最大谷深Rv，就面性狀的觀點考慮雖然會成為超級品質，但不會在破損或玻璃微粒的問題方面造成妨礙。而且，該第4發明的玻璃基板中， Ο 亦為無論實施或不實施強化處理（熱強化處理），均可獲得如上所述的優點。於以上第1發明〜第4發明中的任一項發明中，較好的是上述倒角面是藉由研磨處理而形成。即，若於玻璃基板的該邊界部上藉由研磨處理而形成倒角面’則藉由實施同一研磨處理，可使該倒角面的面性狀（第1發明中為Rzjis以及RSm，第2發明中為Rvk，第3發明中為R^q，第4發明中為Rv)均一化，因此可 15 201034798 —-r— 於單個玻璃基板的邊界部上遍及長度方向全長而形成具有均一的面性狀的倒角面。而且，對於多個玻璃基板，亦可與玻璃基板的差異無關，而於各邊界部上形成具有同等的面性狀的倒角面，且可降低品質的不均。進而，上述倒角面藉由上述端面的研磨處理後的研磨處理而形成為佳。即’首先藉由對玻璃基板的端面進行研磨，而適當地提高該端面的面性狀（第1發明中為減小Rzjis且增大 RSm，第2發明中為減小Rvk，第3發明中為減小RAq，第4發明中為減小RV) ’然後藉由研磨而形成倒角面，藉此，相較於上述端面的面性狀而使該倒角面的面性狀更佳，若如此則能夠高效地形成可解決玻璃基板的破損及微粒問題的面性狀。因此’就面性狀的觀點考慮而成為有效率的處理。於上述構成中，上述端面可於上述表面及背面的外周端彼此間形成為平坦面。若如此，則表面及背面此兩個面與端面之間的各邊界部成為角形狀態，因此就緩和拉伸應力的觀點考慮，於該邊界部上形成倒角面的意義變大。於此情形時，可對玻璃基板的端面實施研磨處理，或者如雷射切斷等般使用雷射來進行玻璃基板的分割時’亦可不對玻璃基板的端面實施研磨處理。即，於利用雷射切斷等來進行玻璃基板的分割時’形成為平坦面的玻璃基板的端面的面性狀接近於與表面及背面大致同等的面，因此，不對端面進行研磨，而僅 16 201034798 於邊^部上_細她面便足夠。至板科=:::==及背面的外周端 Ο Ο 的县端㈣狀的情科，較好的是，於與上述端面 _ ^ η正交且與上述表面及背面正交的剖面中，表盘貝=邊界部上所形成的上述倒角面的朝向表面侧的切線二述表面所成的角度α、以及背面側的邊界部上所形成的上述倒角面的朝向背面侧的切線與上述背面所成的角度万分別滿足10。^ α錢。及10。^万歳。的關係。即、’例如圖7中俯視觀察所示，僅對至板厚中央部向外侧而逐漸突出的剖面圓弧狀的端面3bl進行研磨後，該端面3bl與表面（或背面）2al的邊界部zl形成凹凸形狀，，且該邊界部zl本來存在於直線ζχ所表示的位置上，但實，上偏向表面（或背面）2al的中央側而存在。該種現象是因如下情形而產生的：於玻璃基板u的端面3Μ研磨時，磨石的研磨粒陷入至較本來應成為邊界的直線ζχ更靠近表面（或背面）2al側的位置；以及磨石的研磨粒使表面（或背面）2al側部分剝離。然而，如圖8縱剖面所示，若磨石的研磨面6bl以45。左右的斜率接觸於玻璃基板u 的表面（或背面）2al與端面3M的本來應成為邊界的上 17 201034798 w-» ^ ^ / ，直線zx附近，則實際的邊界部Z1與磨石的研磨面6bl 並不接觸。因此，磨石益法對兮m rt ^ ^ …對忒凹凸狀的邊界部zl進行研That is, when stress is generated in the inside of the glass substrate due to bending of the glass substrate or improper temperature distribution, it is found that the above-mentioned stress is most likely to occur in the vicinity of the boundary portion. Therefore, as long as the maximum valley depth Rv of the boundary portion (chamfered surface) is smaller than the maximum valley depth Rv of the end surface, the deep valley portion where the stress concentration is reduced or disappears from the boundary portion where the stress concentration is likely to occur. As a result, damage due to bending of the glass substrate or improper temperature distribution can be reduced as much as possible, and the problem that the glass particles remain and remain can be avoided. Further, even if the maximum valley depth Rv of the end surface of the glass substrate is smaller than the maximum valley depth Rv of the chamfered surface of the boundary portion, the surface quality is super quality, but it does not hinder the problem of breakage or glass particles. . Further, in the glass substrate of the fourth aspect of the invention, the above-described advantages can be obtained regardless of whether or not the strengthening treatment (heat strengthening treatment) is performed or not. In any one of the first to fourth inventions described above, it is preferred that the chamfered surface is formed by a polishing process. In other words, when the chamfered surface is formed by the polishing treatment at the boundary portion of the glass substrate, the surface property of the chamfered surface can be obtained by performing the same polishing treatment (in the first invention, Rzjis and RSm, second) In the invention, Rvk is R^q in the third invention, and Rv) is uniform in the fourth invention. Therefore, it is possible to form a uniform surface over the entire lengthwise direction of the boundary portion of the single glass substrate at 15 201034798--r. The chamfered surface of the trait. Further, irrespective of the difference in the glass substrate, a plurality of glass substrates can be formed with chamfered surfaces having the same surface properties at the respective boundary portions, and unevenness in quality can be reduced. Further, it is preferable that the chamfered surface is formed by a polishing treatment after the polishing treatment of the end surface. In other words, the surface of the glass substrate is firstly polished, and the surface properties of the end surface are appropriately increased (in the first invention, Rzjis is decreased and RSm is increased, and in the second invention, Rvk is decreased. In the third invention, In the fourth invention, in order to reduce RV)', the chamfered surface is formed by polishing, whereby the surface property of the chamfered surface is better than the surface property of the end surface, and if so, It is possible to efficiently form a surface property that can solve the problem of breakage and fine particles of the glass substrate. Therefore, it is treated as an effective rate from the viewpoint of the face trait. In the above configuration, the end surface may be formed as a flat surface between the outer peripheral ends of the front surface and the back surface. In this case, since the boundary portions between the two surfaces and the end surface are in an angular state, the significance of forming the chamfered surface on the boundary portion is increased from the viewpoint of relaxing the tensile stress. In this case, the end surface of the glass substrate may be subjected to a polishing treatment, or the laser substrate may be divided by a laser such as laser cutting. The end surface of the glass substrate may not be subjected to a polishing treatment. In other words, when the glass substrate is divided by laser cutting or the like, the surface property of the end surface of the glass substrate formed into a flat surface is close to the surface substantially equal to the surface and the back surface. Therefore, the end surface is not polished, but only 16 201034798 On the side of the section _ thin her face will be enough. To the syllabary =:::== and the county end (four) of the outer peripheral end Ο 背面 of the back, preferably, in a section orthogonal to the above-mentioned end face _ ^ η and orthogonal to the surface and the back surface The dial = = the angle α formed by the tangential surface on the surface side of the chamfered surface formed on the boundary portion, and the tangent line toward the back side of the chamfered surface formed on the boundary portion on the back side The angle formed by the back surface described above is 10, respectively. ^ α money. And 10. ^ Wan Hao. Relationship. In other words, for example, as shown in a plan view of Fig. 7, the boundary portion z1 of the end surface 3b1 and the surface (or the back surface) 2a is polished only after the end surface 3b1 of the cross-sectional arc shape which gradually protrudes outward toward the center portion of the plate thickness. The concavo-convex shape is formed, and the boundary portion z1 originally exists at a position indicated by the straight line ,, but the upper portion is biased toward the center side of the surface (or the back surface) 2a1. This phenomenon is caused by the fact that when the end surface 3 of the glass substrate u is ground, the abrasive grains of the grindstone fall into a position closer to the surface (or the back side) 2a side than the straight line which should be the boundary; The abrasive grains of the stone peel off the 2al side portion of the surface (or the back surface). However, as shown in the longitudinal section of Fig. 8, the grinding surface 6b1 of the grindstone is 45. The slope of the left and right sides is in contact with the surface (or the back surface) 2a of the glass substrate u and the upper surface of the end surface 3M which should be the boundary. 201034798 w-» ^ ^ / , near the line zx, the actual boundary portion Z1 and the polished surface of the grindstone 6bl does not touch. Therefore, the grindstone method is used to study the boundary portion zl of 兮m rt ^ ^ ...

留在:可對邊界部Z1的一部分進行研磨，其結凹凸狀的邊界部z並未完全地研磨， =邊界部上無法形成由指定的研磨面所構成的倒角面。 ^ ’較好的是使上述角度α、方小於等於45。，但若該又α、/3小於1G ’則藉由研磨而形成倒角面時，端面侧的研磨區域變窄’且該端面與表面（或背面）的各邊界 2上所殘存的玻璃碎屑（ehipping)或者缺損或裂痕等的除菱待不充》’因此，為避免上述情形，必須將研磨區域?大至表面侧（或背面側），作為邊界部而言成為不佳的升人％。相對於此’若上述角度α、0超過3〇。，則藉由研 J而形成倒角面時，如果未不當地擴大端面侧的研磨區域，則無法形成該倒角面，從而導致生產率的惡化。因此，忒角度α、/5只要處於上述數值範圍内，則不會發生上述不良情況。就上述觀點考慮，更好的是使上述角度“、点的下限值為15。，且使上限值為20。。於以上構成中，較好的是板厚τ滿足〇〇5 mm^TS U mm的關係。即’若玻璃基板的板厚T超過1.1 mm，則玻璃基板勺板尽T對该玻璃基板的強度的影響增大，有可能無法充分發揮上述的用以與導致玻璃基板破損的、因彎曲或不當的溫度分佈所引起的應力相對抗的本發明（第1〜第4發月）特有的效果。相對於此，若玻璃基板的板厚τ小於〇〇5 18 201034798 mm，則將難以對表面及背面兩個面與端面的各自之間的邊界部上實施適當的研磨處理。因此，只要玻璃基板的板厚T處於上述數值範_，則可避免上述不良情況。另外，就上述觀點考慮，更好的是使玻璃基板的板厚τ的下限值為0.1 mm’且使上限值為〇7mm。又，較好的是板厚T、以及與上述倒角面的長度方向正交的方向的寬度W滿足0.07 $ W/Ta3G的關係。 ❹ 即’若W/T小於0,07，則倒角面的形成區域變得不充分，由於倒角面的存在而帶來的端面強度的上升效果將減 =。相對於此’若W/T超過〇.3〇，則形成倒角面所需要的時間增長，生產率下降。目此，只要W/T處於上述數值範圍内，則可避免上料良肢。另外，就±述觀點考慮，更好的是滿足0.10SW/TS0.20的關係。另外，包括以上構成的玻璃基板較好的是遍及其邊的 ^長而形成著倒角面’但對於板厚較薄的玻璃基^等而言，考慮職由研磨㈣成倒角_難度，亦可將俯視觀察下的角（corner)部附近自倒角面的形成部位中除外。另-方面’為解決上述技術性課題而發明的方法的發明是-種玻璃基板的製造方法，製造形成上述倒角面而^ 的玻璃基板，其特徵在於：作為研磨上關角面的研磨工具，使用具有與旋轉軸正交的研磨面的旋轉研磨工具，其中上述研磨_外周部的粗糖度小於 J二且對於玻璃基板的表面及背面中的至少一個二U 後的端面之間的邊界部，上述旋轉研磨工具—邊沿上述邊 19 201034798 $部的長度方向相對直線移動， =面由上述研磨面的外周部以及内周部== 與旋方法/由於旋轉研磨工具的研磨面（相磨面）的粗糙产，二且f研磨面的外周部的粗糙度小於内周部主，口此，虽該旋轉研磨工具對於上述玻璃Λ板的〇 S:轵====== ==:::周二進行該邊界部的微細細微的句勻」效果。藉此，於#姑戚其 :=玻^ 或裂痕等的發;==，的缺損(初始碎屑）心二：! 段，旋轉研磨工具相對直線移動，綠度較大的内周部將抵接於與上述初二:進行相對的粗磨。藉由該相對的縮因:邊而i隹许m「… 開始㈣界部受到微細研磨 ill箄:自」’因此不會導致缺損或裂痕等的發生 ;，的進展，而是順利地開始進行相對的粗磨終ρ白段’該旋轉研磨卫具進而相對直線移動，^ ΞΙ的Ϊ述粗糙度較小的外周部將抵接於實施“對^ 動而^研Ϊ而進行精磨。藉此’對因該旋轉研磨工呈的振動而自研磨面的移動方向後端作用於倒角面上所產： 20It is noted that a part of the boundary portion Z1 can be polished, and the boundary portion z having the uneven portion is not completely polished, and the chamfered surface composed of the designated polishing surface cannot be formed at the boundary portion. It is preferable that the above-mentioned angle α and the square are equal to or less than 45. However, if α and /3 are less than 1G', the chamfered surface is formed by grinding, the polishing area on the end surface side is narrowed, and the glass remaining on the boundary 2 of the end surface and the surface (or the back surface) is broken. Therefore, in order to avoid the above situation, it is necessary to increase the grinding area to the surface side (or the back side) as a boundary portion. %. In contrast, the above angles α and 0 exceed 3 〇. When the chamfered surface is formed by grinding J, if the polishing region on the end surface side is not enlarged, the chamfered surface cannot be formed, resulting in deterioration in productivity. Therefore, if the 忒 angles α and /5 are within the above numerical range, the above-described problems do not occur. From the above viewpoints, it is more preferable to make the above-mentioned angle ", the lower limit of the point is 15 and the upper limit value is 20. In the above configuration, it is preferable that the plate thickness τ satisfies 〇〇 5 mm^ Relationship between TS U mm. That is, if the thickness T of the glass substrate exceeds 1.1 mm, the influence of the glass substrate on the strength of the glass substrate increases, and the above-mentioned glass substrate may not be sufficiently exhibited. The damage effect of the present invention (first to fourth months) due to stress or stress caused by bending or improper temperature distribution. In contrast, if the thickness τ of the glass substrate is smaller than 〇〇5 18 201034798 mm Therefore, it is difficult to perform an appropriate polishing treatment on the boundary portion between the front surface and the back surface of the front surface and the end surface. Therefore, if the thickness T of the glass substrate is in the above numerical range, the above-mentioned problem can be avoided. From the above viewpoints, it is more preferable that the lower limit value of the thickness τ of the glass substrate is 0.1 mm' and the upper limit is 〇7 mm. Further, the thickness T and the chamfered surface are preferably The width W of the direction orthogonal to the length direction is full 0.07 $ W/Ta3G relationship ❹ That is, if W/T is less than 0,07, the formation area of the chamfered surface becomes insufficient, and the effect of the end face strength due to the existence of the chamfered surface is reduced. On the other hand, if W/T exceeds 〇.3〇, the time required to form the chamfered surface increases, and the productivity decreases. Therefore, as long as W/T is within the above numerical range, the feeding of the good limb can be avoided. Further, it is more preferable to satisfy the relationship of 0.10SW/TS0.20 from the viewpoint of the above description. Further, it is preferable that the glass substrate including the above configuration has a chamfered surface formed over the length of the side thereof. In the case of a thin glass base, etc., it is considered that the grinding (4) is chamfered _ difficulty, and the corner portion in the plan view may be excluded from the formation of the chamfered surface. The invention of the method for solving the above-mentioned technical problems is a method for producing a glass substrate, and a glass substrate for forming the chamfered surface is used, and the polishing tool for polishing the upper corner surface is used and rotated. a rotary grinding tool with an axially orthogonal grinding surface, wherein The polishing-grinding degree of the outer peripheral portion is less than J2 and for the boundary portion between the end faces of at least one of the surface and the back surface of the glass substrate, the rotary grinding tool is edged along the length direction of the side portion 19 201034798 Linear movement, the = surface is roughened by the outer peripheral portion and the inner peripheral portion of the above-mentioned polishing surface == and the spinning method / the rough surface of the grinding surface (phase grinding surface) of the rotary grinding tool, and the roughness of the outer peripheral portion of the grinding surface is smaller than In the inner peripheral portion, the rotary grinding tool performs the effect of the fineness of the boundary portion on the 〇S: 轵========::: Tuesday of the glass raft. In this way, in ##戚其:=玻璃^ or cracks, etc.; ==, the defect (initial debris) heart two:! segment, the rotary grinding tool moves relative to the straight line, the inner circumference of the greener degree will be larger It is abutted against the roughing of the first two: By the relative contraction: the side of the 隹 m m "... The beginning (four) boundary is subjected to fine grinding ill 箄自自自 ' ' ' ' ' ' ' ' ' ' ' ' ' , , , , , , , , , , , , , , , , , , , , , , The relative rough grinding end ρ white segment 'The rotary grinding Guard is further moved in a straight line, and the outer peripheral portion of the ΞΙ Ϊ 粗糙度粗糙度粗糙度粗糙度粗糙度外外外外外外外外外外外外外This is produced by the rear end of the moving direction of the grinding surface acting on the chamfered surface due to the vibration of the rotating grinder: 20

201034798 2該倒角面的後端的缺損或裂痕等進行抑制，並且將因相 ^的粗磨而使倒角面上殘存的微小的磨削粉或_ = 除。如此，伴隨單個旋轉研磨工具的相對直線移動，玻璃基板的邊界部依序實施包括微細研磨（均勻）、相以及精磨的—連串研磨處理，藉此，可抑制缺損或 ^艮的產生，並且赌時間進行倒角面的形成處理，因此』’將確保«置的簡化以及倒角面周邊的良好品質，並且可《•某求生產率的大幅提高。另外，該旋轉研磨工具與玻璃 ^板中的任—者或兩者可直線觸，在朗基板的邊界部杯長度方向的尺寸大於等於mm的大型玻璃基板的月幵y時，有利的是在將玻璃基板固定於作業臺上等的狀態下使力疋轉研磨工具沿該玻璃基板的邊界部的長度方向移動；反之，於小型玻璃基板的情形時，有利的是固定設置 5亥旋轉研磨工具，並使玻璃基板以橫穿研磨面的方式而直線移，。而且’較好的是，於使用彈簧（spring)等彈性體來祕支撐旋轉研磨工具的狀態下，使該旋轉研磨工具 £接於上述玻璃基板的邊界部，藉此可使倒角面的面性狀變得較佳。進而，為解決上述技術性課題而發明的方法的發明是，種玻璃基板的製造方法，製造於上述的端面研磨處理後形成倒角φ而朗玻璃基板，其特徵在於：賊璃基板的端面實施粗磨處理後再實施精磨處理，然後，於玻璃基板的表面及背面中的至少一個面與上述端面之間的邊界部上，使用具有較上述精磨處理更細的粒度的研磨工具來實 21 201034798 施指定的研磨處理，藉此形成上述倒角面。根據上述方法，藉由粗磨與精磨，可高效地且短時間地將玻璃基板的端面研磨_如邮大致圓弧狀等，並且，作為此後的研磨，並不是進而利用更細的粒度的研磨工具來將該玻璃基板的端面研磨成相同雜，而是利用更細的粒度的研磨工具，於該邊界部上形成倒角面。因此， y=面、倒角面、以及表f面的三種面性狀為最佳，而 ^地提㈣面強度。而且’較好的是，將進行端面的粗磨處理的研磨工具、進行端面的精磨處理的研磨工具、以及進行指定研磨處理的研磨工具配設於同一路徑上了各可一邊連續相對地直線移動-邊進行各研磨處理， =行各處理的情形相比，可大幅縮短處理時間而謀來彈° f而’較好的是’於使用彈簧等彈性體支撐者進行指定研磨處理的研磨工具的狀態下，使的二處理的研磨工具壓接於上述破璃基板的邊界部，精此可使倒角面的面性狀變得較佳。 [發明的效果] 的至本發明，在玻璃基板的表面及背面中並使用=面之間所存在的邊界部上形成倒角面，此_倒角_面性狀規定為最佳值，因倒角而f因玻璃基板的f曲或不當的溫度分佈而導致該力集中將ίίϊΓ應力時’導致玻璃基板破裂或缺損的應璃微粒難以殘^及、而使破損的發生概率劇減，並且玻殘存及π召，可謀求製品的品質提高。 22 201034798 舉實施【實施方式】以下參純關式對本發明另外，独下的實舞齡，料LCD f的兄月用玻璃基板作騎象。圖1是將本實施形態的破璃基板1的主要部的縱剖面圖。另外，該圖^中，僅對玻璃基U的表面2a 側部分的形態進行圖示，背面側部分亦成為夾持板厚方向中^ X而大致對稱的形態。如該圖i所示，該玻璃基板 I括平面狀的表面2a、縱剖面形成凸狀的圓弧形狀的端面3、以及形成於表面2a與端面3之間的平面狀的倒角面 4。換言之，玻璃基板i +，存在於表面％及背面的外周端彼此_端面3、與細2a以及#面分職由倒角面4 而連接。另外，該玻璃基板丨並未實施強化處理（熱強化處理等）’但實施該處理亦無妨。〇該玻璃基板1的端面3是本實施形態中實施了粗磨處理後再實施精磨處理而成的研磨面，並且表面2&是成形面即未研磨面’且倒角面4是端面3的精磨處理後再實施指定研磨處理而成的指定研磨面。使該玻璃基板1的倒角面4的微觀不平度的十點高度 Rz2小於端面3的微觀不平度的十點高度Rzi，且使倒角面 4的粗糙度曲線要素的平均長度1^1112大於端面3的粗糙度曲線要素的平均長度RSmi。另外，表面2a為鏡面，因此 23 201034798201034798 2 The defect or crack at the rear end of the chamfered surface is suppressed, and the minute grinding powder remaining on the chamfered surface or _ = is removed by the coarse grinding of the phase. Thus, with the relative linear movement of the single rotary grinding tool, the boundary portion of the glass substrate is sequentially subjected to a series of grinding processes including fine grinding (uniform), phase, and fine grinding, whereby the occurrence of defects or defects can be suppressed. In addition, the gambling time is carried out to form the chamfered surface, so that the simplification of the setting and the good quality around the chamfered surface can be ensured, and the productivity can be greatly improved. In addition, any one or both of the rotary polishing tool and the glass plate may be in direct contact with each other. When the size of the large-sized glass substrate in the longitudinal direction of the cup of the Lang substrate is greater than or equal to mm, it is advantageous. When the glass substrate is fixed to the work table or the like, the force rubbing polishing tool is moved along the longitudinal direction of the boundary portion of the glass substrate; conversely, in the case of a small glass substrate, it is advantageous to fix the 5 round rotary grinding tool. And the glass substrate is linearly moved across the polishing surface. Further, it is preferable that the surface of the chamfered surface can be obtained by attaching the rotary polishing tool to the boundary portion of the glass substrate while using an elastic body such as a spring to support the rotary polishing tool. The traits became better. Further, the invention of the method for solving the above-described technical problems is a method for producing a glass substrate, which is manufactured by the above-described end surface polishing treatment to form a chamfer φ and a glazing substrate, which is characterized in that the end surface of the thief glass substrate is implemented. After the rough grinding treatment, the finish grinding treatment is performed, and then, at a boundary portion between at least one of the front surface and the back surface of the glass substrate and the end surface, a grinding tool having a finer grain size than the fine grinding treatment is used. 21 201034798 The specified grinding process is performed to form the chamfered surface described above. According to the above method, by rough grinding and fine grinding, the end surface of the glass substrate can be polished efficiently and in a short time, such as a substantially arc shape, and the subsequent polishing is not further using a finer particle size. The grinding tool grinds the end surface of the glass substrate to the same impurity, and a chamfered surface is formed on the boundary portion by using a grinding tool having a finer particle size. Therefore, the three surface properties of the y=face, the chamfered surface, and the surface f are optimal, and the (four) plane strength. Further, it is preferable that the polishing tool that performs the rough grinding treatment of the end surface, the polishing tool that performs the finishing treatment of the end surface, and the polishing tool that performs the specified polishing treatment are disposed on the same path, and each of them can be continuously and linearly aligned. By moving - each polishing process is performed, and the processing time can be greatly shortened compared to the case of each processing, and the grinding tool can be used to perform the specified polishing process using an elastic body supporter such as a spring. In the state of the second processing tool, the two processing tools are pressed against the boundary portion of the glass substrate, and the surface properties of the chamfered surface can be improved. [Effects of the Invention] In the present invention, a chamfered surface is formed on a boundary portion between the surface and the back surface of the glass substrate, and the _ chamfering surface property is defined as an optimum value. The angle f is caused by the f-curve of the glass substrate or the improper temperature distribution, which causes the force of the glass particles to be broken or broken, and the probability of occurrence of breakage is drastically reduced, and the glass is broken. Remaining and π calls can improve the quality of products. 22 201034798 实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施实施。。。。。。。。。。。。 Fig. 1 is a longitudinal sectional view showing a main part of a glass substrate 1 of the present embodiment. In the figure, only the form of the surface 2a side portion of the glass base U is shown, and the back side portion is also substantially symmetrical with respect to the thickness direction of the plate. As shown in Fig. i, the glass substrate 1 includes a planar surface 2a, an end surface 3 having a convex arcuate shape in a longitudinal section, and a planar chamfered surface 4 formed between the surface 2a and the end surface 3. In other words, the glass substrate i + is present on the outer surface of the surface % and the back surface, the end surface 3, and the thin surface 2a and the # surface are joined by the chamfered surface 4. Further, the glass substrate 丨 is not subjected to a strengthening treatment (heat strengthening treatment or the like), but the treatment may be carried out. The end surface 3 of the glass substrate 1 is a polishing surface which is subjected to a rough grinding treatment in the present embodiment and then subjected to a finish grinding treatment, and the surface 2 & is a molded surface, that is, an unpolished surface, and the chamfered surface 4 is an end surface 3 After the finish grinding process, the specified polishing surface specified by the grinding process is applied. The ten-point height Rz2 of the microscopic unevenness of the chamfered surface 4 of the glass substrate 1 is smaller than the ten-point height Rzi of the microscopic unevenness of the end face 3, and the average length of the roughness curve element of the chamfered surface 4 is greater than 1 11 11 The average length RSmi of the roughness curve elements of the end face 3. In addition, the surface 2a is mirrored, thus 23 201034798

該表面2a的微觀不平度的十點高度小於倒角面4的微觀不平度的十點尚度Rz2，且該表面2a的粗糙度曲線要素的平均長度大於倒角面4的粗糙度曲線要素的平均長度 RSm2。於此情形時’倒角面4的微觀不平度的十點高度 Rz2小於等於1.5 /zm’並且該倒角面4的微觀不平度的十點咼度Rz2與端面3的研磨面的微觀不平度的十點高度Rz I 之比，即 ^1/IVZ2入於寻於1.5且小於等於1〇·〇。又，倒角面4的粗紐曲線要素的平均長度RSm2A^等於⑽ ’並且該倒肖面4的姆度曲線要素的平均長度與端面3的祕度曲線要素的平均長度Μ%之比 RSnu/RSm2大於等於（U且小於等於〇 7。又’使，玻璃基板i的，φ 4的溝痕深度滅小於等於0.95 (較好的以、於等於G2q)。另外，由、為鏡面，因此該表面2a的溝濟、、疮 ' 溝痕深度Rvk。 h度Μ小於倒角面4的進而，使該玻璃基板丨的彳方根斜率RAq小料於αι ^度=均另外，由於表面2a為鏡面，因㈣=疋]、於等於〇.05)。的均方根斜率RAq小於倒表面2a的粗糙度曲線斜率RAq。 4的粗糙度曲線的均方根又，使該破璃基板1的倒备等於2.0 μιη (較好的是小於的最大谷深Rv小於表面2a為鏡面，因此該表面2 ^ ^ 另外，由於面4的最大谷深Rv。的取大谷深Rv小於倒角 24 201034798. 另一方面，於圖1所示的剖面（與端面3的長度方向正交、且與表面2a及背面正交的剖面）中’倒角面4的朝向表面2a側的切線A與表面2a所成的角度α大於等於1〇。且小於等於30° (於本實施形態中為18°)，並且雖然未圖示，但背面側的倒角面的朝向背面側的切線與背面所成的角度亦大於等於10。且小於等於30。（本實施形態中為 18。）。於此情形時’倒角面4是藉由指定研磨處理而將僅進 ® 行了端面3的研磨處理的狀態下的、形成表面2a與端面3 的波形的根源的邊界部z的周邊（圖1中以虛線表示的部位的周邊）去除而成的面，該去除部是自根源的邊界部z 朝向端面3側的寬度W1為70 ym、且自根源的邊界部z 朝向表面2a侧的寬度W2為30 的區域。另外，該根源的邊界部z的切線B與表面2a所成的角度7於本實施形態中為25。。進而，該玻璃基板1中設定為：該玻璃基板丨的板厚 Ο T小於等於1.1 mm且大於等於〇〇5 mm，並且倒角面4的寬度W(與倒角面4的長度方向（沿邊的方向）正交、且與表面2a及背面平行的方向的尺寸）與板厚τ之比，即， W/T大於等於0.07且小於等於〇 3〇。具備如上所述的構成的玻璃基板丨是以如下方式進行製造。日#圖2例示有：大致矩形的破璃基板〗，該玻璃基板i 是糟由以下方式而獲得，即，於利用下拉（d〇wndraw)法 25 201034798 或浮式（float)法等而成形後的玻璃原板的表面的四個部位，以獲得描晝著大致矩形的刻設線的區域的方式而書j出劃線（scribe)，且以該劃痕為起點而折割玻璃原板；以及研磨工具5,對該玻璃基板1的經折割的端面部3a進行研磨處理。該玻璃基板1的端面部3a首先藉由第丨研磨工具而進行粗磨處理，其次藉由第2研磨工具而進行精磨處理。如圖2所示’第1研磨工具為粗磨用旋轉磨輪（加町 grinding wheel)(金屬結合劑鑽石磨輪），該粗磨用旋轉磨輪疋於剷視下成凹狀的大致圓弧形狀的外周面上安裝由金 ❹ 屬結合劑（metal bond)保持的鑽石研磨粒層而成。而且，於將該第1研紅具減於玻璃基板丨_面部3a的狀態下’使第1研磨工具沿玻璃基板丨的端面部3a的長度方向 (沿邊方向）相對移動，藉此進行粗磨處理。第2研磨工具形成與第i研磨工具相同的形狀，且是以聚胺基甲酸酯樹脂（polyurethane resin )等而於該第2研磨工具的外周面結合碳化石夕等較細的研磨粒而成的精磨用旋轉磨輪（樹脂結合劑磨輪（resinbondwheel))。該第2研磨工具在抵壓於玻璃基板1的經粗磨處理的端面部的狀態下，與上述@ 樣地相對移動’藉此進行精磨處理，其結果如圖3所示，於玻璃基板1上形成剖面大致圓弧狀的端面％，該端面％的微觀不平度針點高度Rzjis約為丨〜3 _，溝痕深度 Rvk約為1.〇〜15，粗糖度曲線的均方根斜率約為 =2〜0.20,最大谷㈣約為3 〇〜5()鋒。另外，玻璃基板1的端面3b的形成並不限定於如上所示經過二階段的 26 201034798 研磨處理，亦可藉由經過三階段或三階段以上的研磨處理而進行。如上所述，當於玻璃基板1上形成著剖面大致圓弧狀的端面3b時，使用第3研磨工具6，藉由實施指定研磨處理而於該端面3b與表面2a的邊界部z、以及端面3b與背面2b的邊界部z上形成倒角面4。如圖4所示，該第3研磨工具6包括與旋轉軸6a正交的平面狀的研磨面（研磨面） 6b’5亥研磨面6b是由較上述第2研磨工具更細的研磨粒而〇形成。另外，玻璃基板1於端面扑的周邊向前突出的狀態下，安裝於作業台（平板）7的上表面。 “ 而且，一邊使兩個第3研磨工具6的研磨面6b同時抵壓於玻璃基板1的表面2a側的邊界部z與背面沘侧的邊界部z並旋轉，-邊使第3研磨工具6沿玻璃基板！的邊界部z的長度方向相對移動，藉此進行指定研磨處理。藉此，將玻璃基板1的邊界部z上所殘存的多數的玻璃碎屑等去除。於此情形時，設定為：兩個第3研磨工具6的 ❹ 研磨面6b、與玻璃基板1的表面2a及背面2b所成的角度分別大於等於10。且小於等於3〇。（本實施形態中為18。）。較好的疋，如圖5所示，第3研磨工具6中，中央部為圓瓜的凹。p ’以包圍該凹部的方式而排列粗链度相對小的内 f側，磨部6ba、以及粗糙度相對大的外周側研磨部_，藉由該兩個部—、_，玻縣板丨的邊界部z將受到指定研磨處理。另外，兩個第3研磨工具6是相對於相對移動方向而隔離配置著。 27 201034798 而且，結束該指定研磨處理，藉此如圖6(以及圖n 所示，於玻璃基板1的表面2a與端面3之間，形成完全去除邊界部z而成的倒角面4。藉由形成該倒角面4，即便因玻璃基板1的彎曲或不當的溫度分佈所引起的拉伸應力作用於該倒角面4上，該倒角面4上亦不會產生應力集中，端面3 (包括倒角面4)的破壞強度上升，並且可避免玻璃微粒或玻璃碎屑等殘存並滯留的問題。另外，於上述實施形態中，於端面3自表面2a及背面2b的外周端向外側彎曲成凸狀而成的玻璃基板1中應用〇本發明，但對於端面3形成平坦面（較好的是與表背^成直角的平坦面）的玻璃基板，亦可同樣地應用本發明。又，於上述實施形態中，在形成著如下端面的玻璃基板中應用本發明，該端面是形成自表面及背面的外周端至板厚中央部而向外側逐漸突出的彎曲面，但對於形成著如下端面的玻璃基板亦可同樣地應用本發明，該端面是於表面及背面的外周端彼此間形成與上述面成直角的平坦面。進而，於上述實施形態中，在藉由折割來分割玻璃原板而成的玻璃基板中應用本發明，但對於如雷射切斷般使用田射或熱應力分割玻璃原板而成的玻璃基板亦可同樣地應用本發明。於此情形時，不對形成平坦面的端面進行研磨處理’而是僅對邊界部進行處理，藉此形成倒角面。又於上述實施形恝中，於FPD用的玻璃基板中應用 ^明’但例如有機EL照明用或太陽電池用的玻璃基板中同樣亦可應用本發明。 28 201034798 [實施例l] 本發明者等為確認與上述圖1所例示的玻璃基板的倒角，的u觀不平度的十點高度Rzjis、以及粗链度曲線要素 2^均長度RSm相關的效果，而如下所示般進行本發明的貝=例la〜le與比較例la〜lc的對比。該等實施例以及比較例均使用藉由溢流下拉（加⑽办抓）法而成形的日本電氣確子股份公司製造的OA-10來作為玻璃原板。〇 i _於下縣1所示的本發明的實施例la〜le以及比較例a、lb ’沿劃痕折割而分割板厚為7〇〇 # m的玻璃原板’藉此獲得短邊尺寸為且長邊尺寸為180〇mm 的玻璃基板’將該玻璃基板作為所使用的試樣。又，同樣地，，於實施例ld、le以及比較例le，沿劃痕折割而分割板厚為5GG _的朗雜，藉此獲得短邊尺寸為55〇 mm且長邊尺寸為㈣_的玻璃基板，將該玻璃基板作為所使用的試樣。而且，對於該等玻璃基板的端面部，按〇照以τ所不_序來進行用則彡成剖面成凸狀的圓狐形狀 i端面的研麟理、以及用以在該研磨後的端Φ與表面及背面的各邊界部上形成倒角面的指定研磨處理。關於本發明的實施例la〜lc以及比較例la、lb，首先，於將玻璃基板載置並吸附固定於壓盤上的狀態下，使形成圖2所示的形態的作為第1研磨工具的粗磨^旋轉磨石（研磨粒#400)的外周面壓接於玻璃基板的端面部，並且以表1所示的磨削速度而直線移動，藉此來形成剖面大 29 201034798 Λ c 致圓弧形狀的粗縫面即端面部。其次，同樣地，使形成圖 2所不的_的作為第2研磨1具的精磨職轉磨石（研磨粒#ι_)的外周面壓接於玻璃基板的粗磨後的端面部，並且以表1所示的磨削速度而直線移動，藉此形成被精磨成。·ί面大致圓弧形狀而成的端面。又，關於本發明的實施例Id、le以及比較例lc，首先一邊使玻璃基板以表2所不的磨削速度而直線移動，—邊使固定配置於固定位置 ^、且形朗2所示的形態的作為第1研紅具的粗磨用 :疋轉磨石（研磨粒糾州的外周面壓接於玻璃基板的端面邵’藉此形成剖面大致圓弧形狀的粗糙面即端面部。其次， =樣地’ if使玻璃基板以表2所示的磨削速度直線移 ^ 邊使固定設置於固定位置、且形成圖2所示的形態、作為第2研磨工具的精磨用旋轉磨石（研磨粒#1_)的 =面壓接於玻璃基板的粗磨後的端㈣，藉此形成被精磨成剖面大致圓弧形狀而成的端面。然後，3研磨工具來對㈣基板_面與表面月面的各邊界部進行指糾磨處理。作為帛3研磨工 ^ ’使用在圓形的基盤上蚊著平板狀的鑽石研磨板的研二具，該平板狀的鑽騎餘是使_研練分散於二材料中而成。另外，上述研磨粒的大小以及表卜2 的研磨粒的大小是依據JISR6001 : 1998。、於執行Μ研祕科，以綱基㈣絲及背倒角面的切線所成的角度（圖1的角度α :背面側亦 ° Ο成I8。〜22。的方式，而適當地調整第3研磨工具的 30 201034798. 角度，並且對第3研磨工具與玻璃基板的接觸面供給磨削液（磨削水）。而且，為獲得預期的倒角尺寸，而使第3 研磨工具（研磨板）一邊以周速度2〇〇〇 m/min旋轉，一邊以如表1、2所示的不同磨削速度而直線移動，從而遍及除角部附近以外的玻璃基板的整個外周而進行指定研磨處理。如上所述，獲得實施例la〜lc以及實施例ld、le的玻璃基板。於實施例la、lb、Id中，第3研磨工具的研磨粒為〇 #3000，於實施例1c、le中，第3研磨工具的研磨粒為 #2000，相對於此，於比較例ia〜ic中，並不進行利用第 3研磨工具的指定研磨處理，而僅僅是對玻璃基板的端面部進行利用第1研磨工具的粗磨處理、以及利用第2研磨工具的精磨處理。又，於所有實施例中，以倒角尺寸（倒角寬度）處於60〜200 //m的範圍内的方式，而選定第3 研磨工具的移動速度或磨削條件，在作為試樣的玻璃基板的所有端面的與表面及背面的邊界部上形成大致平坦的倒〇角面。另外，於以上的實施例中，使用如下方法：於玻璃基板的端面部上形成大致圓弧狀的研磨面後，使用第3研磨工具，於端面的與表面及背面的邊界部上形成倒角面·，但亦可為如下：於將玻璃基板吸附固定於壓盤上的狀態下，於同一移動軌道（rail)上設置著第丨研磨工具、第^研磨工具、以及第3研磨工具，並沿該移動軌道而同時使三種研磨工具移動，藉此連續地完成研磨動作。若如此，則以 31 201034798 更短時間完朗有研磨處理，因此可顯著提高加工效率，，於各邊的尺寸大於等於麵麵的大型尺寸的玻璃基板的研磨處理步驟中，操作將變得容易。X，對於尺寸較小的玻璃基板，亦可使用如下方法：將三種研磨工具設置成與玻璃基板的邊平行，—邊個料料搬送機構來搬送玻璃基板，一邊連續進行各研磨處理。另一方面，關於實施例la〜le以及比較例la〜lc的各玻璃基板’使用東京精密公司製造的SurfeGm59〇A，以測定長度5.0 mm來進行粗糙度測定，並依據jis b〇6〇i : 2001而^算出玻縣板的端面以及㈣面的微觀不平度的十點IHJ度Rzjis (RZl、Rz2)、以及粗糙度曲線要素的平均長度RSm (RSim、RSm2)值的各粗糖度參數。關於該微觀不平度的十點高度Rzi、RZ2以及粗糙度曲線要素的平均長度RSm^RSm2,是於同一條件下對1〇個玻璃基板實施倒角處理，並且對各玻璃基板分別測定1〇次，並計算出平均值，藉此來進行評價。將結果示於下述表丨、2。一關於研磨後的玻璃基板的強度，藉由使用〇rientec& 司製造的Tensilon RTA-250的三點彎曲測試法來測定破壞強度。彎曲測試的樣品是使用將玻璃基板的端面部的邊的中央部切出為80x15 mm的尺寸的測試片，進而，使端面，的頂點（剖面大致圓弧的頂點）朝上而負載著負荷來測疋该測試片在破損時的負荷，利用下述數丨所示的式子進行計算，藉此來測定破壞應力（端面強度）σ。 [數1] 32 201034798 σ = ^-2 Β h2 另外，上述數1所示的式子中，ρ為破壞負荷，L為支點間距離，B為樣品寬度，h為玻璃厚度。 ^下述表1、2中記載有玻璃基板的破壞應力，該等破壞，力是表示針對各實施例以及各比較例的各玻璃基板的破壞應力而測定1 〇個玻璃基板所得的值中的最小值（強度最小）。進而，為了對附著或殘存於玻璃基板的表面上的玻璃微粒的附著特性進行評價，而於對各實施例以及各比較例的各玻璃基板進行清洗及乾燥後，對玻璃基板表面所殘存的每個玻璃片的表面的微粒值進行測定。微粒值是使用 Hitachi High-Technologies公司製造的微粒測定裝置 GI_72〇()來進行1 "m及1轉以上的微粒數的測定，將數值換算為每1平方米的個數。將結果示於下述表i、2。而且，關於各實施例以及各比較例的各玻璃基板，利用顯微鏡來對端面的與表面及背面的邊界部分上的因碎屑所引起的階差的殘存狀態進行放大觀察。將結果示於〇卜2、。於此情形時，在表1、2中，『〇』表示未確認到碎屑階差的存在’『△』表示觀察到殘存有微小的階差，『x 表示觀察到殘存有較大的階差。』 201034798 ,}!&./,86εε 【11 邊界部碎屑 Ο 〇 o < X 微粒值 i 1 (個/m2) On Os o V〇端面強度 (MPa) ί 180 190 V-» VD 134 »r> o i RSm1/RSm2 !____ 0.19 0.43 〇 RSm2 ( " m ) 倒角部 154 220 1_ m <N 沄 RSm! ( " m) i 端面 in - irj 00 IT) Rzi/Rz2 4.14 9.17 S 0.97 0.84 Rz2 ( " m ) 倒角部 0.37 — 一 00 o oo 1.20 2.91 Rz] ( /z m) 端面 m VO 2.49 M3 ! 2.45 :磨削速度 (mm/sec ) 100 100 400 100 400 倒角研磨板 #3000 #3000 #2000 實施例la 實施例lb 1 1 實施例1c ' 比較例la 比較例lb 201034798 ο ο 』·Ξ.ζ.86εε 【ίΝ<】邊界部 1 碎屑〇 Ο X 微粒值 (個 /m2) 00 134 端面強度 (MPa) ΙΛ) Os £ CO ε 00 0.41 0.45 00 ο RSm2 ( /ζ m) 倒角部 140 120 RSm, ( μ m) 端面 !η 5 <N N 苎 N* cd 3.58 7.24 0.98 Rz2 ( μ m ) 倒角部 0.85 0.41 3.05 Rz, ( // m) 端面丨…」—.0—4 2.97 2.98 磨削速度 I (mm/sec ) 200 200 200 倒角 1研磨板 #3000 #2000 實施例Id 實施例le 比較例lc 201034798 / 另外，於下述表3表示：在倒角面的指定研磨處理時的、玻璃基板的表面與鄰接於該表面的倒角面的朝向表面側的切線所成的角度α (參照圖1 )、及玻璃基板的背面與鄰接於該背面的倒角面的朝向背面側的切線所成的角度冷的實測值、以及倒角面的寬度W的測定值。 [表3] 倒角研磨板玻璃厚度T (yU m) 切線角度α (。）切線角度冷 (°) 倒角部寬度 W ( // in) W/T 實施例la #3000 700 18 18 120 0.17 實施例lb #3000 700 18 18 190 0.27 實施例lc #2000 700 24 24 80 0.11 實施例Id #3000 500 20 20 70 0.14 實施例le #2000 500 _ 20 20 130 0.26 根據上述表1、2而可確認：本發明的實施例u〜le 中任一者均於玻璃基板的端面的表面及背面的邊界部上形成著如下的倒角面，該倒角面的微觀不平度的十點高度較小，理所當然地接近鏡面’且具有充分的寬度；與如比較例la〜le的情形般未形成倒角面的玻璃基板相^實 la〜le中任-者均具有明_高的破壞強度（即度超過160 MPa)。又，於各實施例的倒角面中，並到因碎屬所引起的研磨邊界部的輯微小裂 :: 認到於玻额粒_著_财_下顯錢 36 20103479$ 結果。因此’本發明的各實施例的玻璃基板成為難以引起後 V驟中的破才貝、且強度極高的玻璃基板，並且因端面所弓丨起的玻璃微粒的產生極少，即便在如液晶顯示器或電漿顯示器、進而如有機EL等般用於高解析度顯示的顯示器時亦可有效地抑制在玻璃基板上形成顯示元件或裝置 (device)時所發生的斷線不良等。 ❹ 而且，於本發明的各實施例的情形時，即便使磨削速度自100mm/min增大至400mm/min，亦只要選擇合適的研磨工具的研磨板並設定磨削條件，則可高效地獲得同樣的倒角面，可實現各步驟的高效化。另一方面，於各比較例中，不僅研磨工具的移動速度為200 mm/sec或400 mm/sec的情形時，即便研磨工具的移動速度低速至100 mm/sec，端面部的最低破壞強度亦比較低，有可能會因搬送機構對強度較低的端向強度較低的端面的熱應力集中而引起破損。=一：〇較例均為：由於微粒值比較高、且邊界部的碎屑階差較大，因此例如於清洗時以及乾燥時、或搬送時以及捆包時等的步驟中，玻璃微粒自邊界部的碎屑部剝離並著板上，從而有可能於形成顯示元件或裝置時=== 良。因此，可確認：本發明的各實施例的玻璃基板與上述比較例的玻璃基板相比’於破壞強度與玻璃微粒的任面均極其優異。 [實施例2] 37 201034798 χ.... 本發明者等為確認與上述圖！所例示的玻璃基板的倒角面的溝痕深度Rvk有關的效果，而如下所示進行本發明的貫施例2a〜2續比較例的對比。關於該等實施例以及比車乂例’均使用利用溢流下拉法而成形的日本電氣确子股份公司製造的QA_1G (未實麵化處理）來作為玻璃原板。關於下述表4所示的本發明的實施例2a〜2d以及比較例’於板厚為 _的_原板上劃出劃線來進行折割而分割’藉此獲得短邊尺寸為⑽mm且長邊尺寸為 1800 mm的玻璃基板，將該玻璃基板作為所使用的試樣。〇具體的玻璃原板的分割方法為如下：利用鑽石晶片於玻璃原板的表面上劃出劃線，使彎曲力矩（bending 作用於玻璃原板以便於該劃線上產生拉伸應力，折割而分割。另外，作為其他分割方法，亦可為^進;; 用鑽石磨輪等，於玻璃原板的-部分上形成初始傷痕（初始裂痕）’對該部位照射雷射而進行局部加熱之後，喷附冷卻劑（refrigerant)而使該部位急劇冷卻，藉此使初始裂^ 有進展，由此切斷玻璃原板。其中，於利用該種雷射時’玻璃基板的端面成為平坦面，因此成為與實施例以及比較例的玻璃基板不同的端面形狀。使外周面由圓筒面（於該實施例以及比較例中為外周面凹陷為大致圓弧狀）構成的圓柱狀的磨石，一邊在旋轉軸排列成與玻璃基板的表面的法線方向平行的狀態下旋轉，一邊抵壓於以上述方式而獲得的玻璃基板的端面，並且沿該端面的長度方向相對地直線移動，藉此進行該端面 38 201034798 ι 磨的磨i °於此情料’作為對朗基㈣端面進行研的多預先準備著研練餘合劑（binde〇的不同树自最初研練餘且黏合雜硬的磨石逐漸磨粒較細且黏合劑較軟的磨石。 t ’對於結束端面的研磨處_玻璃絲，藉由研 f 與表面（#面）_界部上形成大致平面狀的The ten point height of the microscopic unevenness of the surface 2a is smaller than the ten point roughness Rz2 of the microscopic unevenness of the chamfered surface 4, and the average length of the roughness curve element of the surface 2a is larger than the roughness curve element of the chamfered surface 4 The average length is RSm2. In this case, the ten-point height Rz2 of the microscopic unevenness of the chamfered surface 4 is less than or equal to 1.5 /zm' and the ten-degree twist Rz2 of the microscopic unevenness of the chamfered surface 4 and the microscopic unevenness of the polished surface of the end face 3 The ratio of the ten-point height Rz I, that is, ^1/IVZ2 is found at 1.5 and less than or equal to 1〇·〇. Further, the average length RSm2A^ of the rough curve elements of the chamfered surface 4 is equal to (10)' and the ratio of the average length of the gradation curve elements of the inverted facet 4 to the average length Μ% of the endurance curve elements of the end face 3 RSnu/ RSm2 is greater than or equal to (U and less than or equal to 〇7. In addition, the glass substrate i, φ 4 groove depth is less than or equal to 0.95 (preferably equal to G2q). In addition, the mirror is mirrored, so The groove 2 of the surface 2a and the groove depth Rvk. The h degree Μ is smaller than the chamfered surface 4, so that the square root slope RAq of the glass substrate 小 is less than αι ^ degrees = respectively, since the surface 2a is Mirror, because (four) = 疋], equal to 〇.05). The root mean square slope RAq is smaller than the roughness curve slope RAq of the inverted surface 2a. The root mean square of the roughness curve of 4, in turn, makes the backing of the glass substrate 1 equal to 2.0 μm (preferably, the maximum valley depth Rv is smaller than the surface 2a is a mirror surface, so the surface 2 ^ ^ additionally, due to the surface The maximum valley depth Rv of 4 is larger than the chamfer 24 201034798. On the other hand, the cross section shown in Fig. 1 (the cross section orthogonal to the longitudinal direction of the end surface 3 and orthogonal to the front surface 2a and the back surface) The angle α between the tangent line A on the side facing the surface 2a side of the chamfered surface 4 and the surface 2a is 1 大于 or more and 30° or less (18° in the present embodiment), and although not shown, The angle formed by the tangent to the back side of the chamfered surface on the back side and the back surface is also 10 or more and 30 or less (18 in the present embodiment). In this case, the chamfered surface 4 is The periphery of the boundary portion z (the periphery of the portion indicated by a broken line in FIG. 1) that forms the root of the waveform of the surface 2a and the end surface 3 in the state in which only the polishing process of the end face 3 is performed is specified in the polishing process. In the formed surface, the removed portion is from the boundary portion z of the root source toward the end face 3 side The width W1 is 70 μm, and the width W2 from the boundary portion z of the root source toward the surface 2a side is 30. The angle 7 between the tangent B of the boundary portion z of the root and the surface 2a is in the present embodiment. Further, in the glass substrate 1, the thickness Ο T of the glass substrate 小于 is less than or equal to 1.1 mm and greater than or equal to 〇〇5 mm, and the width W of the chamfered surface 4 (with the chamfered surface 4) The ratio of the length direction (the direction along the side) and the dimension parallel to the surface 2a and the back surface) to the sheet thickness τ, that is, W/T is 0.07 or more and 小于3〇 or less. The glass substrate 丨 is manufactured in the following manner. Fig. 2 illustrates a substantially rectangular glass substrate, which is obtained by the following method, that is, by using a pull-down method (d〇wndraw) 25 201034798 or four parts of the surface of the original glass plate formed by a float method, etc., to obtain a region in which a substantially rectangular engraved line is drawn, and the book j is scribed, and The scratch is used as a starting point to cut the original glass plate; and the grinding tool 5, The folded end surface portion 3a of the glass substrate 1 is subjected to polishing treatment. The end surface portion 3a of the glass substrate 1 is first subjected to rough grinding treatment by a second polishing tool, and secondly, fine grinding treatment is performed by a second polishing tool. As shown in Fig. 2, the 'first grinding tool is a grinding wheel for rough grinding (metal bonding diamond wheel), and the rough grinding wheel is formed into a concave circular arc shape under scribing. A diamond abrasive grain layer held by a metal bond is attached to the outer peripheral surface, and the first grinding tool is made to reduce the first red tool to the glass substrate 丨_face 3a. The rough grinding process is performed by relatively moving in the longitudinal direction (in the side direction) of the end surface portion 3a of the glass substrate 丨. The second polishing tool has the same shape as the i-th polishing tool, and a fine abrasive grain such as carbon carbide is bonded to the outer circumferential surface of the second polishing tool by a polyurethane resin or the like. A rotary grinding wheel (resin bondwheel) for fine grinding. The second polishing tool is subjected to a refining process by being moved in a state of being pressed against the rough-treated end surface portion of the glass substrate 1 with the above-mentioned "sample", and the result is as shown in FIG. 1 is formed with a substantially arc-shaped end face %, the microscopic unevenness pin point height Rzjis of the end face % is about 丨~3 _, and the groove depth Rvk is about 1. 〇15, the root mean square slope of the coarse sugar curve About =2~0.20, the largest valley (four) is about 3 〇~5() front. Further, the formation of the end surface 3b of the glass substrate 1 is not limited to the above-described two-stage 26 201034798 polishing treatment, and may be performed by three or three stages or more. As described above, when the end surface 3b having a substantially arc-shaped cross section is formed on the glass substrate 1, the third polishing tool 6 is used to perform the specified polishing process on the boundary portion z between the end surface 3b and the surface 2a, and the end surface. A chamfered surface 4 is formed on the boundary portion z between the 3b and the back surface 2b. As shown in Fig. 4, the third polishing tool 6 includes a flat polishing surface (polishing surface) orthogonal to the rotating shaft 6a. 6b' The black polishing surface 6b is a finer abrasive grain than the second polishing tool. 〇 formation. Further, the glass substrate 1 is attached to the upper surface of the work table (flat plate) 7 in a state where the periphery of the end face is protruded forward. Further, while the polishing surface 6b of the two third polishing tools 6 is simultaneously pressed against the boundary portion z on the surface 2a side of the glass substrate 1 and the boundary portion z on the back surface side, the third polishing tool 6 is rotated. The specified polishing process is performed by relatively moving in the longitudinal direction of the boundary portion z of the glass substrate!, thereby removing a large amount of glass debris or the like remaining on the boundary portion z of the glass substrate 1. In this case, setting The angle between the 研磨-polishing surface 6b of the two third polishing tools 6 and the surface 2a and the back surface 2b of the glass substrate 1 is 10 or more and 3 Å or less (18 in the present embodiment). Preferably, as shown in Fig. 5, in the third polishing tool 6, the central portion is a concave of a round melon, and p' is arranged so as to surround the concave portion, and the inner portion f having a relatively small thickness is arranged, and the grinding portion 6ba, And the outer peripheral side polishing portion _ having a relatively large roughness, and the boundary portion z of the two portions, the _, the glass plate slab, is subjected to a specified grinding process. In addition, the two third grinding tools 6 are relatively moved relative to each other. The direction is isolated and configured. 27 201034798 And, the end of the designated research As a result, as shown in FIG. 6 (and FIG. 7 ), a chamfered surface 4 in which the boundary portion z is completely removed is formed between the surface 2 a of the glass substrate 1 and the end surface 3 . By forming the chamfered surface 4 , Even if tensile stress caused by bending or improper temperature distribution of the glass substrate 1 acts on the chamfered surface 4, stress concentration does not occur on the chamfered surface 4, and the end surface 3 (including the chamfered surface 4) In addition, in the above-described embodiment, the glass is formed by bending the outer surface of the end surface 3 outward from the outer peripheral end of the front surface 2a and the back surface 2b into a convex shape. Although the present invention is applied to the substrate 1, the present invention can be applied similarly to the glass substrate in which the end surface 3 is formed into a flat surface (preferably a flat surface at right angles to the front surface). Further, in the above embodiment, The present invention is applied to a glass substrate having an end surface which is a curved surface which is formed to extend outward from the outer peripheral end of the front surface and the back surface to the central portion of the thickness, but may be the same for the glass substrate on which the end surface is formed. Ground According to the invention, the end surface is formed with a flat surface at right angles to the surface between the outer peripheral end of the front surface and the back surface. Further, in the above embodiment, the glass substrate is formed by dividing the original glass sheet by folding. According to the present invention, the present invention can be applied similarly to a glass substrate obtained by dividing a glass original plate by field or thermal stress as in the case of laser cutting. In this case, the end surface forming the flat surface is not subjected to the grinding treatment. The boundary portion is treated only to form a chamfered surface. In the above-described embodiment, the glass substrate for FPD is applied. However, for example, in a glass substrate for organic EL illumination or solar cell, The present invention is applied. 28 201034798 [Embodiment 1] The inventors of the present invention confirmed the ten-point height Rzjis of the u-degree of irregularity and the thick-chain curve element 2^ in order to confirm the chamfering of the glass substrate illustrated in Fig. 1 described above. The effect of the length RSm is compared with the comparison of the examples la to lc of the present invention as shown below. In each of the examples and the comparative examples, OA-10 manufactured by Nippon Electric Co., Ltd., which was formed by an overflow pull-down method, was used as a glass original plate. 〇i_Inventive Examples la to le and Comparative Examples a and lb' of the present invention shown in Xiaxian 1 were cut along the scratches to divide the glass original plate having a thickness of 7 〇〇 # m, thereby obtaining the short side dimension A glass substrate having a long side dimension of 180 mm was used as the sample to be used. Further, in the same manner, in the examples ld, le and the comparative example le, the sheet thickness was divided into 5GG _ along the scratch, whereby the short side dimension was 55 〇 mm and the long side dimension was (4) _ The glass substrate was used as the sample to be used. Further, for the end surface portions of the glass substrates, the circular fox-shaped i-end surface of the circular fox-shaped cross-section having a cross-sectional shape is used in accordance with the τ, and the end portion for the polishing is used. Φ specifies a grinding process for forming a chamfered surface on each boundary portion between the front surface and the back surface. In the examples la to lc and the comparative examples 1a and 1b of the present invention, first, the glass substrate is placed and adsorbed and fixed on the platen, and the first polishing tool in the form shown in Fig. 2 is formed. The outer peripheral surface of the rough grindstone (abrasive grain #400) is crimped to the end surface portion of the glass substrate, and linearly moved at the grinding speed shown in Table 1, thereby forming a large cross section 29 201034798 Λ c The rough surface of the arc shape is the end face. Then, in the same manner, the outer peripheral surface of the fine grinding grindstone (abrasive grain #ι_) as the second polishing material 1 which is formed in FIG. 2 is pressure-bonded to the rough-finished end surface portion of the glass substrate, and The wire was moved linearly at the grinding speed shown in Table 1, thereby forming a finely ground. · An end face that is roughly circular in shape. Further, in the examples Id and le and the comparative example lc of the present invention, first, the glass substrate was linearly moved at a grinding speed not shown in Table 2, and was fixedly disposed at a fixed position and shown by a shape 2 In the rough grinding method of the first research red tool, the outer surface of the polishing grain is pressed against the end surface of the glass substrate, thereby forming an end surface portion which is a rough surface having a substantially circular arc shape. Next, if the glass substrate is linearly moved at the grinding speed shown in Table 2, it is fixed to the fixed position, and the shape shown in Fig. 2 is formed, and the rotary grinding mill for the second grinding tool is used as the second grinding tool. The surface of the stone (abrasive grain #1_) is pressure-bonded to the roughened end (four) of the glass substrate, thereby forming an end surface that is roughly ground into a substantially circular arc shape. Then, the 3 grinding tool is used to the (four) substrate _ The boundary between the surface and the surface of the moon surface is subjected to finger-finishing treatment. As a 帛3 grinding machine, the use of a flat diamond-shaped grinding plate on a circular base plate is used. _The research is dispersed in two materials. In addition, the above abrasive particles The size of the abrasive grains of Table 2 and Table 2 is based on JISR6001: 1998. The angle formed by the tangential line of the base (four) wire and the back chamfer surface is performed by the Μ 秘秘 ( ( ( ( ( ° Ο I I I 〜〜〜〜〜〜〜〜〜〜〜〜〜〜〜第第第第第第第第第第第第第第第第第第第第第第第第第第第第第第第第第第The desired chamfer size is obtained, and the third grinding tool (grinding plate) is linearly moved at different peripheral speeds as shown in Tables 1 and 2 while rotating at a peripheral speed of 2 〇〇〇 m/min. The specified polishing treatment was performed on the entire outer periphery of the glass substrate except for the vicinity of the corner portion. As described above, the glass substrates of Examples 1 to 1c and Examples 1 and 3 were obtained. In Examples la, lb, and Id, the third polishing was performed. The abrasive grains of the tool were 〇#3000. In the examples 1c and le, the abrasive grains of the third polishing tool were #2000. In contrast, in the comparative examples ia to ic, the designation using the third polishing tool was not performed. Grinding treatment, but only the end of the glass substrate The portion performs the rough grinding treatment using the first polishing tool and the fine grinding treatment using the second polishing tool. Further, in all of the embodiments, the chamfering size (chamfer width) is in the range of 60 to 200 //m. In the above-described manner, the moving speed or the grinding condition of the third polishing tool is selected, and a substantially flat inverted corner surface is formed on the boundary portion between the front surface and the back surface of all the end faces of the glass substrate as the sample. In the embodiment, a method of forming a substantially arc-shaped polished surface on the end surface portion of the glass substrate and forming a chamfered surface on the boundary portion between the end surface and the front surface and the back surface using the third polishing tool is used. The first polishing tool, the second grinding tool, and the third grinding tool are disposed on the same moving rail in a state where the glass substrate is adsorbed and fixed to the pressure plate, and along the moving rail. At the same time, the three grinding tools are moved, thereby continuously performing the grinding action. In this case, the grinding process is completed in a shorter time than 31 201034798, so that the processing efficiency can be remarkably improved, and the operation becomes easy in the polishing process of the glass substrate of the large size of each side having a size larger than or equal to the surface. . X. For a glass substrate having a small size, a method may be employed in which three types of polishing tools are disposed in parallel with the sides of the glass substrate, and the glass substrate is conveyed while the material conveying mechanism is being conveyed, and each polishing process is continuously performed. On the other hand, in each of the glass substrates of the examples la to le and the comparative examples la to lc, the roughness was measured using a Surfe Gm 59 A manufactured by Tokyo Seimitsu Co., Ltd., and the measurement was performed with a length of 5.0 mm, and based on jis b〇6〇i : 2001 and ^ calculate the coarseness parameters of the ten-point IHJ degree Rzjis (RZl, Rz2) of the end face of the glass plate and the micro-unevenness of the (four) face, and the average length RSm (RSim, RSm2) values of the roughness curve elements. Regarding the ten-point height Rzi, RZ2 of the microscopic unevenness and the average length RSm^RSm2 of the roughness curve elements, one glass substrate is chamfered under the same conditions, and each glass substrate is measured one time. And calculate the average value to evaluate. The results are shown in Tables 2 and 2 below. Regarding the strength of the polished glass substrate, the breaking strength was measured by a three-point bending test using Tensilon RTA-250 manufactured by 〇rientec & The sample for the bending test was a test piece in which the center portion of the side surface of the end surface of the glass substrate was cut to a size of 80×15 mm, and the apex of the end surface (the apex of the substantially circular arc of the cross section) was placed upward and loaded. The load at the time of breakage of the test piece was measured and calculated by the equation shown below to measure the breaking stress (end face strength) σ. [Equation 1] 32 201034798 σ = ^-2 Β h2 Further, in the equation shown in the above number 1, ρ is the breaking load, L is the distance between the fulcrums, B is the sample width, and h is the glass thickness. In the following Tables 1 and 2, the breaking stress of the glass substrate is described, and the force is a value obtained by measuring one glass substrate for the breaking stress of each glass substrate of each of the examples and the comparative examples. Minimum value (minimum intensity). Further, in order to evaluate the adhesion characteristics of the glass fine particles adhering to or remaining on the surface of the glass substrate, each glass substrate of each of the examples and the comparative examples was washed and dried, and then the remaining surface of the glass substrate was left. The particle values of the surface of the glass sheets were measured. The particle value was measured by the particle measuring device GI_72() manufactured by Hitachi High-Technologies Co., Ltd., and the number of particles of 1 "m and 1 revolution or more was measured, and the numerical value was converted into the number per square meter. The results are shown in Tables i and 2 below. Further, with respect to each of the glass substrates of the respective examples and the comparative examples, the remaining state of the step caused by the debris on the boundary portion between the end surface and the front surface and the back surface was magnified by the microscope. The results are shown in 〇 2. In this case, in Tables 1 and 2, "〇" indicates that the presence of the debris step is not confirmed. '△' indicates that there is a slight step difference observed, and "x indicates that a large step is observed. . 』 201034798 ,}!&./,86εε [11 Boundary debris Οo < X particle value i 1 (pieces / m2) On Os o V〇 face strength (MPa) ί 180 190 V-» VD 134 »r> oi RSm1/RSm2 !____ 0.19 0.43 〇RSm2 ( " m ) chamfering section 154 220 1_ m <N 沄RSm! ( " m) i end face in - irj 00 IT) Rzi/Rz2 4.14 9.17 S 0.97 0.84 Rz2 ( " m ) Chamfering 0.37 — 00 o oo 1.20 2.91 Rz] ( /zm) End face m VO 2.49 M3 ! 2.45 : Grinding speed (mm/sec) 100 100 400 100 400 Chamfering plate #3000 #3000 #2000 Example la Example lb 1 1 Example 1c 'Comparative Example la Comparative Example lb 201034798 ο ο 』·Ξ.ζ.86εε [ίΝ<] Boundary part 1 Detrital 〇Ο X Particle value /m2) 00 134 End face strength (MPa) ΙΛ) Os £ CO ε 00 0.41 0.45 00 ο RSm2 ( /ζ m) Chamfered part 140 120 RSm, ( μ m) End face! η 5 <NN 苎N* cd 3.58 7.24 0.98 Rz2 ( μ m ) Chamfering part 0.85 0.41 3.05 Rz, ( // m) End face 丨..."—.0—4 2.97 2.98 Grinding speed I (mm/sec) 200 200 200 Chamfer 1 grinding plate #3000 #2000 实Example Id Example: Comparative Example lc 201034798 / In addition, Table 3 below shows a tangent line on the surface of the glass substrate adjacent to the chamfered surface of the surface at the time of the specified polishing process on the chamfered surface. The angle α formed (see FIG. 1 ) and the measured value of the angle cold formed by the back surface of the glass substrate and the tangent to the back surface side of the chamfered surface adjacent to the back surface, and the measured value of the width W of the chamfered surface. [Table 3] Chamfered plate glass thickness T (yU m) Tangent angle α (.) Tangential angle cold (°) Chamfered width W ( // in) W/T Example la #3000 700 18 18 120 0.17 Example lb #3000 700 18 18 190 0.27 Example lc #2000 700 24 24 80 0.11 Example Id #3000 500 20 20 70 0.14 Example le #2000 500 _ 20 20 130 0.26 Can be confirmed according to Tables 1 and 2 above In any of the embodiments u to le of the present invention, a chamfered surface is formed on a boundary portion between the front surface and the back surface of the end surface of the glass substrate, and the ten-point height of the microscopic unevenness of the chamfered surface is small. Of course, it is close to the mirror surface 'and has a sufficient width; and the glass substrate phase which does not form a chamfered surface as in the case of the comparative examples la to le has a high-destructive strength (ie, degree) More than 160 MPa). Further, in the chamfered surface of each of the examples, the micro-cracking of the grinding boundary portion due to the genus of the genus is recognized: the glass granules are recognized as the result. Therefore, the glass substrate of each of the embodiments of the present invention becomes a glass substrate which is hard to cause breakage in the post-V step and has extremely high strength, and the generation of glass particles which are bowed by the end faces is extremely small, even in a liquid crystal display such as In the case of a plasma display or a display for high-resolution display such as an organic EL, it is possible to effectively suppress a disconnection failure or the like which occurs when a display element or a device is formed on a glass substrate. ❹ Moreover, in the case of the respective embodiments of the present invention, even if the grinding speed is increased from 100 mm/min to 400 mm/min, it is possible to efficiently select a grinding plate of a suitable grinding tool and set the grinding conditions. By obtaining the same chamfered surface, the efficiency of each step can be achieved. On the other hand, in each comparative example, when the moving speed of the grinding tool is 200 mm/sec or 400 mm/sec, even if the moving speed of the grinding tool is low to 100 mm/sec, the minimum breaking strength of the end face is also If it is relatively low, it may cause damage due to the thermal stress concentration of the end face of the lower end strength of the lower strength of the conveying mechanism. =1: 〇Comparative examples are: Since the particle value is relatively high and the chip size difference at the boundary is large, for example, in the steps of washing and drying, or during transportation and packing, the glass particles are self-contained. The chip portion of the boundary portion is peeled off and placed on the board, so that it is possible to form a display element or device === good. Therefore, it was confirmed that the glass substrate of each of the examples of the present invention is extremely excellent in both the breaking strength and the glass fine particles as compared with the glass substrate of the above comparative example. [Embodiment 2] 37 201034798 χ.... The inventors of the present invention confirmed the above figure! The effect of the groove depth Rvk on the chamfered surface of the glass substrate exemplified is as follows, and the comparison of Comparative Examples 2a to 2 of the present invention is carried out as follows. QA_1G (not surfaced) manufactured by Nippon Electric Co., Ltd., which was formed by the overflow down-draw method, was used as the glass original plate for each of the examples and the vehicle example. In the examples 2a to 2d and the comparative example of the present invention shown in Table 4 below, a scribe line was formed on the _ original plate having a thickness of _, and the scribe line was cut and divided, thereby obtaining a short side dimension of (10) mm and long. A glass substrate having an edge size of 1800 mm was used as the sample to be used.分割 The specific method of dividing the original glass plate is as follows: the diamond wafer is used to draw a scribe line on the surface of the glass original plate, so that the bending moment acts on the original glass plate to generate tensile stress on the scribe line, and is divided by folding. As another method of division, it is also possible to use: a diamond grinding wheel or the like to form an initial flaw (initial crack) on the portion of the original glass plate. After the portion is heated by laser irradiation, the coolant is sprayed ( In the case of rapid cooling of the portion, the initial crack is progressed, thereby cutting the original glass plate. In the case where the laser is used, the end surface of the glass substrate is a flat surface, so that it is compared with the embodiment and the like. In the example, the cylindrical surface of the glass substrate has a different end surface shape. The cylindrical grinding stone is formed by a cylindrical surface (in the embodiment and the comparative example, the outer peripheral surface is recessed into a substantially arc shape), and is arranged on the rotating shaft. The surface of the glass substrate is rotated in a state in which the normal direction is parallel, and is pressed against the end surface of the glass substrate obtained in the above manner, and along the end The length direction is relatively linearly moved, thereby performing the end face 38 201034798 ι grinding grinding i ° in this situation 'as a research on the Langji (four) end face more prepared for the research mixture (binde〇 different trees from The grindstone which was originally ground and adhered to the hard grindstone gradually grinds the grindstone which is finer and has a softer binder. t 'For the end of the grinding surface _ glass filament, by grinding f and surface (# surface) _ boundary Forming a substantially planar shape

GG

G 蚀田μ於此h料’必要的條件是：倒角面的研磨中所人’1石與上述端面的研磨用的磨石相比，研磨粒較細且黏1較軟。倒角_研_的磨石抵壓於儀面的面可，筒面或圓錐面，或亦可為大致平面狀的圓形端面或圓裒％面進而亦可為於布帶上固定著研磨粒的研磨布的表面。而且，料磨;5 (或韻布）相對於玻璃基板的倒角面的長度方向而相對地直線移動。若對下述表4所示的實施例2a進行具體說明，則首先於將分#j後的玻璃基板載置並吸關定於壓盤上的狀態下，使形成圖2所示的形態的作為第J研磨工具的粗磨用疑轉磨石（利用金屬結合劑而固定著#4〇〇研磨粒）的外周面一邊抵壓於玻璃基板的端面部一邊直線移動，藉此形成剖面大致圓弧形狀的粗糙面即端面部。其次，同樣地，使形成圖2所示的形態的作為第2研磨工具的精磨用旋轉磨石（利用樹脂結合而固定#1〇〇〇研磨粒）的外周面，一邊抵壓於玻璃基板的粗磨後的端面部一邊直線移動，藉此而形成被精磨成剖面大致圓弧形狀的端面。然後，利用第3 研磨工具來對玻璃基板的端面與表面及背面的各邊界部進 39 201034798 行指定研j理。作為第3研磨工具，使用一種在圓形的基盤上固疋著平板狀的鑽石研磨板的研磨工具，該平板狀的鑽石研磨板是使鑽石研磨粒（#3〇〇〇研磨粒）^散於樹脂材料中而成。於執行指定研磨處理時，以玻璃基板的表面及背面分別與倒角面的切線所成的角度（圖丨的角度 α :背面侧亦同樣）成18。〜22。的方式’而適當地調整第 3研磨工具的角度’並且對第3研磨工具與玻璃基板的接觸面供給磨削液（磨削水）。而且，為獲得預期的倒角面的寬度尺寸邊使苐3研磨工具（研磨板）以周速度Ο m/miii旋轉，一邊遍及除玻璃基板在俯視觀察下的角部附近以外的整個外周而進行指定研磨處理。如上所述，獲得實施例2a的玻璃基板。另外，上述的研磨粒的大小是依據 JIS R6001 : 1998。於此情形時，關於實施例2b、2c、2d、以及比較例，苐1、第2、第3研磨工具的研磨粒分別與實施例2a不同。下述表4所示的玻璃基板的倒角面的溝痕深度Rvk、以及端面的溝痕深度Rvk是使用東京精密公司製造的 ❹The condition of the G etched field is that the stone of the chamfered surface is thinner than the grinding stone for the end face, and the abrasive grain is finer and the viscosity is softer. The grinding stone of the chamfering_grinding_ can be pressed against the surface of the instrument surface, the cylindrical surface or the conical surface, or may be a substantially planar circular end surface or a rounded surface, or may be fixed on the cloth. The surface of the abrasive cloth. Further, the material mill; 5 (or rhyme) relatively linearly moves with respect to the longitudinal direction of the chamfered surface of the glass substrate. When the embodiment 2a shown in the following Table 4 is specifically described, first, the glass substrate after the division #j is placed and sucked on the platen, and the form shown in FIG. 2 is formed. The outer peripheral surface of the rough grinding honing stone (the #4 〇〇 abrasive grain is fixed by the metal bond) as the J-th grinding tool is linearly moved while being pressed against the end surface portion of the glass substrate, thereby forming a substantially circular cross section. The rough surface of the arc shape is the end face. In the same manner, the outer peripheral surface of the refining grindstone (the resin-bonded and fixed #1〇〇〇-abrasive grain) which is the second polishing tool in the form shown in Fig. 2 is pressed against the glass substrate. The roughened end surface portion is linearly moved, thereby forming an end surface that is refined to have a substantially circular arc shape in cross section. Then, the third polishing tool is used to specify the end faces of the glass substrate and the boundary portions of the front and back surfaces. As the third polishing tool, a polishing tool in which a flat diamond polishing plate is fixed to a circular base plate is used, and the flat diamond polishing plate is used to loosen diamond abrasive grains (#3〇〇〇 abrasive grains). Made of resin material. When the specified polishing process is performed, the angle between the surface and the back surface of the glass substrate and the tangent to the chamfered surface (the angle α of the figure: the back side is also the same) is 18. ~twenty two. In the manner of ', the angle of the third polishing tool is appropriately adjusted' and the grinding liquid (grinding water) is supplied to the contact surface of the third polishing tool and the glass substrate. Further, in order to obtain the desired width dimension of the chamfered surface, the crucible 3 polishing tool (grinding plate) is rotated at a peripheral speed Ο m/miii while extending over the entire periphery except for the vicinity of the corner portion of the glass substrate in plan view. Specify the grinding process. As described above, the glass substrate of Example 2a was obtained. Further, the size of the above abrasive grains is based on JIS R6001: 1998. In this case, in the examples 2b, 2c, 2d, and the comparative examples, the abrasive grains of the crucible 1, the second, and the third polishing tools were different from those of the embodiment 2a. The groove depth Rvk of the chamfered surface of the glass substrate shown in Table 4 below and the groove depth Rvk of the end surface are manufactured by Tokyo Precision Co., Ltd.

Surfcom590A，遍及測定長度5.0 mm來進行粗糖度測定，並依據JIS B0601 : 2001而計算出各Rvk的值。該兩種溝痕深度Rvk均為各自於同一條件下在1〇個玻璃基板上施予倒角面，並且對該等進行10次測定，並計算出平均值，藉此來進行評價。進而’與此同時，求出玻璃基板的端面的最大剖面高度Pt、以及倒角面的最大剖面高度pt。此外，求出玻璃基板的端面強度，來作為因玻璃基板的彎曲或熱 40 201034798 .1 強产，!1起破損的容易程度的標準。關於玻璃基板的端面 :又梅藉由使用0rientee公司製造的Tensilon RTA-250的法來測定破壞強度，並將該破壞強度作為端又奢曲測试的樣品是使用將玻璃基板的端面部的邊的:央部切出成8Gxl5聰的尺寸的測試片，進而，使端面^的頂點（剖面大致圓狐的頂點）朝上而負載著負荷來 ^疋，損時的負荷，利用已述的由數1所示的式子進行計算，藉此來測定破壞應力（端面強度）σ。於下述表4表示：以上述方式而求出的倒角面的溝痕殊度Rvk、端面強度、倒角面的最大剖面高度pt、以及端面的最大剖面高度Pt。 [表4] 實施例2a 實施例2b 實施例2c 實施例2d 比較例 _ Rvk["m] 0.11 0.68 0.55 0.94 0.97 端面強度[MPa] ---- 181 168 166 162 155 倒角面的Pt[以m] ——-— 1.07 5.00 3.55 5.30 5.57 端面的Pt[ μ m] 2.26 8.06 3.96 6.53 7.44 上述表4中，端面的最大剖面高度Pt以及倒角面的最大剖面高度Pt相當於JIS B0601 : 1982中的最大高度 Rmax，因此可認為該端面的最大剖面高度pt以及倒角面的最大剖面高度Pt相當於已述專利文獻1、2的表面最大凹凸。而且，比較例的玻璃基板中，倒角面的最大高度Pt 41 201034798 7 w / 上·/ ϋ 為5.57 //m且小於等於7 並且端面的最大南度Pt為7.44 且小於等於40 //m(〇.〇4mm；)，因此滿足已述專利文獻卜2中所記載的數值範圍的條件。然而’本發明者等確認：該比較例的玻璃基板於FPD、有機EL、以及太陽電池等的製造步驟中會頻繁地引起破損。此意味著：比較例的玻璃基板的端面強度不充分。考慮到此情況’可瞭解端面強度需要160 MPa。而且，本發明的貫％例2a〜2d中，可瞭解倒角面的溝痕深度Rvk小於等於0.95，藉此使端面強度超過16〇MPa而具有充分的端面〇強度。因此，可確認：規定玻璃基板的倒角面的溝痕深度 Rvk小於等於0 95，將在以下方面存在較大意義：抑制因玻璃基板的彎曲或不當的溫度分佈所引起的拉伸應力的產生，並儘可能地降低應力集中，防止玻璃基板的破損。又，對玻璃原板進行雷射切斷來分割而成的玻璃基板中，形成平坦面的端面的面性狀與表背面同樣地接近鏡面，因此可推測：即便於該玻璃基板的該邊界部上與上述，樣地形成倒角面時，只要該倒角面的溝痕深度Surfcom 590A, the measurement of the crude sugar content was carried out over a measurement length of 5.0 mm, and the value of each Rvk was calculated in accordance with JIS B0601:2001. The two groove depths Rvk were each subjected to a chamfered surface on one glass substrate under the same conditions, and the measurement was performed 10 times, and an average value was calculated, thereby evaluating. Further, at the same time, the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height pt of the chamfered surface were obtained. In addition, the strength of the end surface of the glass substrate was determined as a standard for the ease of breakage due to the bending of the glass substrate or the heat of the glass. Regarding the end face of the glass substrate: In addition, the tensile strength was measured by using the method of Tensilon RTA-250 manufactured by the company of the company, and the sample of the end face of the glass substrate was used as the sample of the end face of the glass substrate. The central part cuts out the test piece into the size of 8Gxl5, and further, the apex of the end face ^ (the apex of the roughly rounded fox) is loaded upwards, and the load is loaded, and the load is used. The equation shown in the number 1 is calculated to determine the breaking stress (end surface strength) σ. Table 4 below shows the groove mark degree Rvk of the chamfered surface obtained in the above manner, the end face strength, the maximum cross-sectional height pt of the chamfered surface, and the maximum cross-sectional height Pt of the end surface. [Table 4] Example 2a Example 2b Example 2c Example 2d Comparative Example _ Rvk ["m] 0.11 0.68 0.55 0.94 0.97 End face strength [MPa] ---- 181 168 166 162 155 Pt on the chamfered surface [ m] —————— 1.07 5.00 3.55 5.30 5.57 Pt[ μ m] of the end face 2.26 8.06 3.96 6.53 7.44 In Table 4 above, the maximum profile height Pt of the end face and the maximum profile height Pt of the chamfered surface correspond to JIS B0601 : 1982 Since the maximum height Rmax of the end face and the maximum cross-sectional height Pt of the chamfered surface are equivalent to the maximum surface unevenness of the above-mentioned Patent Documents 1 and 2. Further, in the glass substrate of the comparative example, the maximum height of the chamfered surface Pt 41 201034798 7 w / upper · / ϋ is 5.57 // m and less than or equal to 7 and the maximum southness Pt of the end face is 7.44 and less than or equal to 40 //m (〇.〇4 mm;), therefore, the conditions of the numerical range described in the above-mentioned patent document 2 are satisfied. However, the inventors of the present invention confirmed that the glass substrate of the comparative example frequently causes breakage in the manufacturing steps of FPD, organic EL, and solar cell. This means that the end surface strength of the glass substrate of the comparative example is insufficient. Considering this situation, it can be understood that the end face strength needs 160 MPa. Further, in the % of Examples 2a to 2d of the present invention, it is understood that the groove depth Rvk of the chamfered surface is less than 0.95, whereby the end face strength exceeds 16 MPa and has sufficient end face strength. Therefore, it has been confirmed that the groove depth Rvk of the chamfered surface of the glass substrate is set to be less than or equal to 0 95, which is of great significance in suppressing generation of tensile stress due to bending of the glass substrate or improper temperature distribution. And reduce stress concentration as much as possible to prevent breakage of the glass substrate. Further, in the glass substrate in which the glass original plate is subjected to laser cutting and division, the surface property of the end surface on which the flat surface is formed is similar to that of the front and back surfaces, and it is estimated that even at the boundary portion of the glass substrate In the above, when the chamfered surface is formed as a sample, as long as the chamfer depth of the chamfered surface

Rvk小於 u 等於0.95，則可獲得與上述表4所示的較佳結果同等或更佳的結果。 [實施例3] 本發明者等為確認與上述圖1所例示的玻璃基板的倒角面的粗輪度曲線的均方根斜率RAq有關的效果，而如下所不進行本發明的實施例3a〜3d與比較例的對比。關於該等實施例以及比較例’均使用利用溢流下拉法而成形的 42 1 201034798 曰本電氣硝子股份公司製造的OA-10 (未實施強化處理）來作為破螭原板。 ^關於下述表5所示的本發明的實施例3a〜3d以及比，例’於板厚為700 的玻璃原板上劃出劃線來進行折』而刀剎，藉此獲得短邊尺寸為15〇〇 mm且長邊尺寸為 1800 mm的玻璃基板，將該玻璃基板作為所使用的試樣。具體的破璃原板的分割方法為如下：利用鑽石晶片於玻璃〇，板的表面上劃出劃線，使彎曲力矩作用於玻璃原板以使該劃線上產生拉伸應力，藉此來進行折割而分割。另外，作為其他分割方法，亦可為如下：利用鑽石磨輪等，於玻璃原板的-部分上形成初始傷痕（初始裂痕），對該部位照射雷射而進行局部加熱之後，喷附冷卻劑而使該部位急劇冷卻，藉此使初始裂痕進展，由此切斷玻璃原板。其中，於利用該種雷射切斷時，玻璃基板的端面成為平坦面，因此成為與實施例以及比較例的玻璃基板不同的端面形狀。使外周面由圓筒面（於該實施例以及比較例中為外周面凹陷為大致圓弧狀）構成的圓柱狀的磨石，一邊在旋轉車由排列成與玻璃基板的表面的法線方向平行的狀態下旋轉」一邊抵壓於如上所述而獲得的玻璃基板的端面，並且沿該端面的長度方向相對地直線移動，藉此來進行該端面的研磨處理。於此情形時，作為對玻璃基板的端面來進行研磨的磨石，預先準備著研磨粒或黏合劑的不同的多種磨石、自敢初研磨粒較粗且黏合劑較硬的磨石逐漸變更為研磨粒較細且黏合劑較軟的磨石。 43 201034798 磨，玻:基板’藉由研使用的磨石與上述端面的研:面的:磨中所可為圖的研磨用的磨石抵壓於倒角面的面圓严端=1圓錐面’或亦可為大致平面狀的圓形端面或 : !可為在布帶上固定著研磨粒的研磨布的When Rvk is less than u and equal to 0.95, results equivalent to or better than those shown in Table 4 above can be obtained. [Embodiment 3] The inventors of the present invention confirmed the effect on the root mean square slope RAq of the rough radiance curve of the chamfered surface of the glass substrate illustrated in Fig. 1, and did not perform the embodiment 3a of the present invention as follows. ~3d comparison with the comparative example. For each of the examples and the comparative examples, OA-10 (not reinforced) manufactured by Sakamoto Electric Glass Co., Ltd., which was formed by the overflow down-draw method, was used as the original slab. ^About the examples 3a to 3d of the present invention shown in Table 5 below, and the example of "the scribe line is formed by folding a scribe line on a glass original plate having a thickness of 700", thereby obtaining a short side dimension. A glass substrate having a length of 15 mm and a length of 1800 mm was used as the sample to be used. The specific method for dividing the original glass plate is as follows: using a diamond wafer on a glass crucible, a scribe line is drawn on the surface of the plate, and a bending moment acts on the glass original plate to cause tensile stress on the scribe line, thereby performing folding. And split. Further, as another division method, an initial flaw (initial crack) may be formed on a portion of the original glass plate by using a diamond grinding wheel or the like, and the portion may be irradiated with a laser to be locally heated, and then the coolant may be sprayed. This portion is rapidly cooled, whereby the initial crack progresses, thereby cutting the glass original plate. In the case of cutting with such a laser, the end surface of the glass substrate is a flat surface, and thus has an end surface shape different from that of the glass substrates of the examples and the comparative examples. The cylindrical grindstone which is formed by the cylindrical surface (the outer peripheral surface is recessed into a substantially arc shape in this embodiment and the comparative example) is arranged in the normal direction of the surface of the glass substrate in the rotating car. The surface of the glass substrate obtained as described above is pressed against the end surface of the glass substrate obtained as described above, and is linearly moved in the longitudinal direction of the end surface, whereby the end surface is polished. In this case, as a grindstone for polishing the end surface of the glass substrate, a plurality of different grindstones of the abrasive grains or the binder are prepared in advance, and the grindstone having a relatively coarse abrasive grain and a hard binder is gradually changed. It is a grindstone with finer abrasive grains and softer binder. 43 201034798 Grinding, glass: substrate 'grinding the grindstone and grinding the above-mentioned end face: surface: the grindstone used for grinding in the grind is pressed against the chamfered surface The surface 'or may be a substantially planar circular end face or: ! can be a polishing cloth to which abrasive grains are fixed on the tape

以’轉磨石（或研磨布）相對於玻璃基板的倒角面的+長度方向而相對地直線移動。The 'rotary stone (or polishing cloth) is relatively linearly moved with respect to the + length direction of the chamfered surface of the glass substrate.

對下述表5所示的實施例3a精具體說明，則首「刀割後的玻璃基板載置並吸關定於壓盤上的狀態 =使幵V成圖2所示的形態的作為第丄研磨工具的粗磨用方疋轉磨石（利用金屬結合劑而固定著細〇研磨粒）的外周面，、邊抵壓於玻璃基板的端面部—邊直線移動，藉此而形成剖面大致圓弧形狀的粗糙面即端面部。其次，同樣地，使形成圖2所示的形態的作為第2研磨卫具的精磨用旋轉磨石（利用樹脂結合而固定#1〇〇()研磨粒）的外周面，一邊抵壓於玻璃基板的粗磨後的端面部一邊直線移動，藉此而形成被精磨成剖面大致圓弧形狀而成的端面。然後，利用第3研磨工具來對玻璃基板的端面與表面及背面的各邊界部進行指定研磨處理。作為第3研磨工具，使用一種在圓形的基盤上固定著平板狀的鑽石研磨板的研磨工具，該平板狀的鑽石研磨板是使鑽石研磨粒（#3〇⑻研磨粒）分散於樹脂材料中而成。於執行指定研磨處理時，以玻璃基 44 201034798 板的表面及背面分別與倒角面的切線所成的角度（圖i的角度α :背面側亦同樣）成18。〜22。的方式，而適當地句整第3研磨工具的角度，並且對第3研磨工具與玻璃基板的接觸面供給磨削液（磨削水）。而且，為獲得預期的倒角面的寬度尺寸，而使第3研磨工具（研磨板）一邊以周速度2000 m/min旋轉’一邊遍及除玻璃基板在俯視觀察下的角部附近以外的整個外周而進行指定研磨處理。如上所述而獲得實施例3a的玻璃基板。另外’上述的研磨粒的大小〇是依據JIS R6001 : 1998。於此情形時’關於實施例3b、 3c、3d、以及比較例’第1、第2、第3研磨工具的研磨粒分別與實施例3a不同。下述表5所示的玻璃基板的倒角面的粗糙度曲線的均方根斜率RAq、以及端面的粗糙度曲線的均方根斜率 q是使用東京精密公司製造的Surfc〇m590A，遍及測定長度5.0 mm來進行粗縫度測定’並依據JIS BO601 : 2001 而計算出各RAq的值。該兩種均方根斜率RAq均為各自〇於同一條件下在1〇個玻璃基板上施予倒角面，並且對該等進行10次測定’並計算出平均值’藉此進行評價。進而，與此同時，求出玻璃基板的端面的最大剖面高度Pt、以及倒角面的最大剖面高度汽。而且，求出玻璃基板的端面強度，來作為因玻璃基板的彎曲或熱應力而引起破損的容易程度的標準。關於玻璃基板的端面強度，是藉由使用 Orientec公司製造的Tensilon RTA-250的三點彎曲測試法來測定破壞強度，並將該破壞強度作為端面強度。彎曲測 45 201034798 _•一…f 試的樣品使用將玻璃基板的端面部的邊的中央部切出成 80x15 mm的尺寸的測試片，進而，使端面部的頂點（剖面大致圓弧的頂點）朝上而負載著負荷來測定破損時的負荷’利用已述的由數1所示的式子進行計算，藉此來測定破壞應力（端面強度）σ。於下述表5表示：以上述方式而求出的倒角面的均方根斜率RA q、端面強度、倒角面的最大剖面高度Pt、以及端面的最大剖面高度Pt。 [表5] 實施例3a 實施例3b 實施例3c 實施例3 d 比較例 RA q[~ ] 0.038 0.083 0.076 ------- 0.096 ------- 0.105 端面強度[MPa] 181 168 166 162 155 倒角面的Pt[y m] 1.07 5.00 3.55 5.30 5.57 端面的Pt[//m] 2.26 8.06 3.96 6.53 7.44 上述表5中’端面的最大剖面高度Pt以及倒角面的最大剖面高度Pt相當於JIS B0601 : 1982中的最大高度 Rmax，因此可認為該端面的最大剖面高度pt以及倒角面的最大剖面高度Pt相當於已述專利文獻1 ' 2的表面最大凹凸。而且，比較例的玻璃基板中，倒角面的最大高度pt 為5.57 //m且小於等於7 //m (0.007mm)，並且端面的最大高度Pt為7.44 /zm且小於等於40 #m(〇.〇4mm)，因此滿足已述專利文獻卜2中所記載的數值範圍的條件。 46 201034798In the third embodiment shown in the following Table 5, the first "the state in which the glass substrate after the knife cutting is placed and sucked on the platen = the state in which the 幵V is formed as shown in Fig. 2" The outer peripheral surface of the rough grinding tool for the rough grinding tool (the fine abrasive grains are fixed by a metal bond) is linearly moved while being pressed against the end surface portion of the glass substrate, thereby forming a cross section. The rough surface of the circular arc shape is the end surface part. Next, similarly, the grinding grindstone for fine grinding which is the second polishing head which forms the form shown in FIG. 2 (fixed by resin bonding #1〇〇() grinding) The outer peripheral surface of the pellet is linearly moved while being pressed against the rough-finished end surface portion of the glass substrate, thereby forming an end surface that is roughly ground into a substantially circular arc shape. Then, the third polishing tool is used. The end surface of the glass substrate and the boundary portion between the front surface and the back surface are subjected to a specified polishing treatment. As the third polishing tool, a polishing tool in which a flat diamond polishing plate is fixed to a circular base plate is used, and the flat diamond polishing plate is used. Is to grind diamonds (#3〇(8) abrasive grains) are dispersed in a resin material. When the specified grinding process is performed, the angle between the surface and the back surface of the glass base 44 201034798 plate and the tangent plane is respectively (the angle α of Fig. i) The back side is also the same as the method of 18 to 22, and the angle of the third polishing tool is appropriately set, and the grinding liquid (grinding water) is supplied to the contact surface of the third polishing tool and the glass substrate. In order to obtain the desired width dimension of the chamfered surface, the third polishing tool (polishing plate) is rotated at a peripheral speed of 2000 m/min, while extending over the entire periphery except for the vicinity of the corner portion of the glass substrate in plan view. The specified polishing treatment was carried out. The glass substrate of Example 3a was obtained as described above. Further, the size of the above-mentioned abrasive grains was based on JIS R6001: 1998. In this case, 'About Examples 3b, 3c, 3d, and Comparative Examples The abrasive grains of the first, second, and third polishing tools are different from those of the third embodiment. The root mean square slope RAq of the roughness curve of the chamfered surface of the glass substrate shown in Table 5 below, and the roughness of the end surface. song The rms slope q is calculated using the Surfc〇m590A manufactured by Tokyo Seimitsu Co., Ltd., and the measurement of the roughness is performed over the measurement length of 5.0 mm. The values of each RAq are calculated according to JIS BO601: 2001. The two root mean square slopes Each of RAq was subjected to a chamfered surface on one glass substrate under the same conditions, and the measurement was performed 10 times and the average value was calculated. Further, at the same time, The maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height of the chamfered surface are obtained. The thickness of the end surface of the glass substrate is determined as a standard for the degree of breakage due to bending or thermal stress of the glass substrate. The end face strength of the glass substrate was measured by a three-point bending test using Tensilon RTA-250 manufactured by Orientec, and the breaking strength was taken as the end face strength. Bending test 45 201034798 _•一...f The sample to be tested is cut into a test piece having a size of 80x15 mm at the center of the side of the end surface of the glass substrate, and further, the apex of the end face (the apex of the substantially circular arc of the cross section) The load at the time of damage was measured by the load and the load was measured by the equation shown by the number 1 described above, and the breaking stress (end surface strength) σ was measured. Table 5 below shows the root mean square slope RA q of the chamfered surface obtained in the above manner, the end face strength, the maximum cross-sectional height Pt of the chamfered surface, and the maximum cross-sectional height Pt of the end surface. [Table 5] Example 3a Example 3b Example 3c Example 3 d Comparative Example RA q[~ ] 0.038 0.083 0.076 ------- 0.096 ------- 0.105 End face strength [MPa] 181 168 166 162 155 Pt[ym] of chamfered surface 1.07 5.00 3.55 5.30 5.57 Pt[//m] of end face 2.26 8.06 3.96 6.53 7.44 In Table 5 above, the maximum profile height Pt of the end face and the maximum profile height Pt of the chamfered surface are equivalent. In the maximum height Rmax of JIS B0601: 1982, it is considered that the maximum cross-sectional height pt of the end surface and the maximum cross-sectional height Pt of the chamfered surface correspond to the maximum surface unevenness of the above-mentioned Patent Document 1 '2. Further, in the glass substrate of the comparative example, the maximum height pt of the chamfered surface is 5.57 //m and less than or equal to 7 //m (0.007 mm), and the maximum height Pt of the end face is 7.44 /zm and less than or equal to 40 #m ( 〇.〇4mm), therefore, the conditions of the numerical range described in the patent document 2 are satisfied. 46 201034798

LL

然而，本發明者等確認：該比較例的玻璃基板在FPD、有機EL、以及太陽電池等的製造步驟中會頻繁地引起破損。此意味著：比較例的玻璃基板的端面強度不充分。考慮到此情況，可暸解端面強度需要160 MPa。而且，本發明的實施例3a〜3d中，可瞭解倒角面的均方根斜率11^9小於等於0.10 ’藉此’端面強度超過160 MPa而具有充分的端面強度。因此’可確認：規定玻璃基板的倒角面的均方根斜率R^q小於等於〇.1〇，將在以下方面存在較大意義：抑制對因玻璃基板的彎曲或不當的溫度分佈所引起的拉伸應力的產生，並儘可能地降低應力集中，防止玻璃基板的破損。又，對玻璃原板進行雷射切斷來分割而成的玻璃基板中，形成平坦面的端面的面性狀與表背面同樣地接近鏡面，因此可推測：即便於該玻璃基板的該邊界部上與上述同樣地形成倒角面時，只要該倒角面的均方根斜率R^q 小於等於G.U) ’則可獲得與上絲5所示的較佳結果或更佳的結果。 [實施例4] 本發明者等為確認與上述圖W例示的玻璃基板的倒角面的最大谷深Rv相關的效果，而如下所示進行样明的實施例4a〜4d與比較例的對比。關於該等實施例以纽較例，均制溢流下拉法而成形的日本電氣確子股份公司製造的OA_1〇 (未實施強化處理）來作為破璃原板。關於下述表6所示的本發明的實施例如〜粕以及比 47 201034798 ~ ι— 較例，於板厚為700 //m的玻璃原板上劃出劃線來進行折咅1J而分割’藉此而獲得短邊尺寸為15〇〇 mm且長邊尺寸為 1800 mm的玻璃基板，將該玻璃基板作為所使用的試樣。具體的玻璃原板的分割方法為如下：利用鑽石晶片於玻璃原板的表面上劃出劃線，使彎曲力矩作用於玻璃原板以使該劃線上產生拉伸應力，藉此而進行折割而分割。另外，作為其他分割方法，亦可為如下：利用鑽石磨輪等，於玻璃原板的一部分上形成初始傷痕（初始裂痕），對該部位照射雷射而進行局部加熱之後，噴附冷卻劑而使該部位急劇冷卻，藉此使初始裂痕進展，由此切斷玻璃原板。其中，於利用δ亥種雷射切斷時，玻璃基板的端面成為平坦面，因此成為與實施例以及比較例的玻璃基板不同的端面形狀。使外周面由圓筒面（於該實施例以及比較例中為外周面凹陷為大致圓弧狀）構成的圓柱狀的磨石，一邊在旋轉軸排列成與玻璃基板的表面的法線方向平行的狀態下旋轉，一邊抵壓於以上述方式獲得的玻璃基板的端面，並且沿該端面的長度方向相對地直線移動，藉此進行該端面的研磨處理。於此情形時’作為對玻璃基板的端面進行研磨的磨石，預先準備著研磨粒或黏合劑的不同的多種磨石，自最初研磨粒較粗且黏合劑較硬的磨石逐漸變更為研磨粒較細且黏合劑較軟的磨石。其·人，對於結束端面的研磨處理的玻璃基板，藉由研磨而於端面與表面（背面）的邊界部上形成大致平面狀的倒角面。於此情形時，必要的條件是：倒角面的研磨中所 48 201034798 述端面的研磨用的磨石相比，研磨粒較細可為ιΞι筒：二倒角面的研磨用的磨石抵壓於倒角面的面圓^ Μ錐面、’或亦可為大致平面狀的圓形端面或矣I ❿亦可為在布帶上蚊著研磨粒的研磨布的自而等磨石（或研磨布）相對於玻璃基板的倒角面的長度方向而相對地直線移動。 ΟHowever, the inventors of the present invention confirmed that the glass substrate of the comparative example frequently causes breakage in the manufacturing steps of FPD, organic EL, and solar cell. This means that the end surface strength of the glass substrate of the comparative example is insufficient. With this in mind, it can be understood that the end face strength requires 160 MPa. Further, in the embodiments 3a to 3d of the present invention, it is understood that the root mean square slope 11^9 of the chamfered surface is less than or equal to 0.10', whereby the end face strength exceeds 160 MPa and has sufficient end face strength. Therefore, it can be confirmed that the root mean square slope R^q of the chamfered surface of the glass substrate is less than or equal to 〇.1〇, which has a large meaning in the following aspects: suppression of bending due to bending of the glass substrate or improper temperature distribution The tensile stress is generated and the stress concentration is reduced as much as possible to prevent breakage of the glass substrate. Further, in the glass substrate in which the glass original plate is subjected to laser cutting and division, the surface property of the end surface on which the flat surface is formed is similar to that of the front and back surfaces, and it is estimated that even at the boundary portion of the glass substrate When the chamfered surface is formed in the same manner as described above, a better result as shown by the upper wire 5 or a better result can be obtained as long as the root mean square slope R^q of the chamfered surface is equal to or less than GU)'. [Example 4] The inventors of the present invention confirmed the effects relating to the maximum valley depth Rv of the chamfered surface of the glass substrate exemplified in Fig. W, and compared the examples 4a to 4d shown in the following with the comparative examples. . With respect to these examples, OA_1〇 (not reinforced) manufactured by Nippon Electric Co., Ltd., which was formed by the overflow down-draw method, was used as the original glass plate. Regarding the embodiment of the present invention shown in Table 6 below, for example, 粕粕 and 47 34 34 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 700 700 700 700 700 700 700 700 700 700 700 700 700 Thus, a glass substrate having a short side dimension of 15 mm and a long side dimension of 1800 mm was obtained, and the glass substrate was used as a sample to be used. The method of dividing the specific glass original plate is as follows: a diamond wafer is used to draw a scribe line on the surface of the glass original plate, and a bending moment acts on the glass original plate to cause tensile stress on the scribe line, thereby being folded and divided. Further, as another division method, an initial flaw (initial crack) may be formed on a part of the original glass plate by using a diamond grinding wheel or the like, and the portion may be irradiated with a laser to be locally heated, and then the coolant may be sprayed. The portion is rapidly cooled, whereby the initial crack progresses, thereby cutting the original glass plate. In the case of cutting with a δ ray type laser, the end surface of the glass substrate is a flat surface, and thus has an end surface shape different from that of the glass substrates of the examples and the comparative examples. The cylindrical grindstone which is formed by the cylindrical surface (the outer peripheral surface is recessed into a substantially arc shape in this embodiment and the comparative example) is arranged in the rotation axis in parallel with the normal direction of the surface of the glass substrate. In the state of being rotated, the end surface of the glass substrate obtained in the above manner is pressed and linearly moved in the longitudinal direction of the end surface, whereby the end surface is polished. In this case, as the grindstone for polishing the end surface of the glass substrate, a plurality of different grindstones of abrasive grains or binders are prepared in advance, and the grindstone which is coarser from the initial abrasive grains and harder than the binder is gradually changed to grindstone. A finer stone with a finer binder and a softer binder. In the glass substrate which finished the end surface polishing treatment, a substantially planar chamfered surface is formed on the boundary portion between the end surface and the surface (back surface) by grinding. In this case, the necessary conditions are as follows: in the grinding of the chamfered surface, the abrasive grindstone of the end face of the grinding process of the surface of the surface is compared with the grinding grindstone of the end face. The surface of the chamfered surface is ^ Μ Μ ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( Or the polishing cloth) relatively linearly moves with respect to the longitudinal direction of the chamfered surface of the glass substrate. Ο

G 表6所不的實施例4a進行具體說明，則首〇於將後的麵基板載置並吸關定於壓盤上的狀態 _:形f圖2所不的形態的作為第1研磨工具的粗磨用專磨石（利用金屬結合劑而固定著#4〇〇研磨粒）的外周 f ’ -邊抵壓於_基板的端面部—邊直線移動，藉此形成剖面大關弧形狀的粗糙面即端面部。其次，同樣地，，形成圖2所示的形態的作為第2研紅具的精磨用旋轉磨石（利麟脂結合而固定#1〇〇〇研磨粒）的外周面，一邊抵壓於玻璃基板的粗磨後的端面部—邊直_動，藉此而形成被精磨成剖φ大致圓弧雜的端面。紐，利用第 3研磨工具來對玻璃基板的端面與表面及背面的各邊界部進行指定研磨處理。作為第3研磨工具，使用—種在圓形的基盤上固定著平板狀的鑽石研磨板的研磨工具，該平板狀的鑽石研磨板是使鑽石研磨粒（#3〇〇〇研磨粒）分散於樹脂材料中而成。於執行指定研磨處理時，以破璃基板的表面及为面分別與倒角面的切線所成的角度（圖丨的角度 α :背面側亦同樣）成18。〜22。的方式，而適當地調整第 3研磨工具的角度，並且對第3研磨工具與破璃基板的接 49 201034798 觸面供給磨削液（磨削水）。而且，為獲得預期的倒角面的寬度尺寸’而使第3研磨工具（研磨板）一邊以周速度2〇〇0 m/min旋轉，一邊遍及除玻璃基板在俯視觀察下的角部附近以外的整個外周而進行指定研磨處理。如上所述而獲得實施例4a的玻璃基板。另外’上述的研磨粒的大小是依據 JIS R6001 : 1998。於此情形時，關於實施例仆、4c、4d、以及比較例，第1、第2、第3研磨工具的研磨粒分別與實施例4a不同。下述表6所示的玻璃基板的倒角面的最大谷深Rv是〇使用東斤、精密公司製造的Surfcom590A，遍及測定長度5.0 mm來進行粗糙度測定，並依據JIS B〇6〇1 : 2〇〇1而計算出各Rv的值。該最大谷深Rv於同一條件下在1〇個玻璃基板上施予倒角面，並且對該等進行1〇次測定，並計算出平均值，藉此來進行評價。進而，與此同時，求出玻璃基板的端面的最大剖面高度Pt、以及倒角面的最大剖面高度 Pt二而且，求出玻璃基板的端面強度，來作為因玻璃基板的考曲或熱應力而引起破損的容易程度的標準。關於玻璃基板的端面強度，藉由使用Odentec社製造的 Tensilon RTA 250的二點彎曲測試法來測定破壞強度，並將該破壞 =度作為端面強度。彎曲測試的樣品是使用將玻璃基板的、面P的邊的中央部切出成8〇χ15 mm的尺寸的測試片，端面部的頂點（剖面大致圓弧的頂點）朝上而負者負何來測定破損時的負荷，利用已述的由數 1所示的進行汁算，藉此來測定破壞應力（端面強度）σ。 50 201034798 於下述表6表示：以上述方式而求出的倒角面的最大谷深Rv、端面強度口、倒角面的最大剖面高度Pt、以及端面的最大剖面高度Pt。 [表6] 實施例4a 實施例4b 實施例4c 實施例4d 比較例 RV[ u m] 1.96 1.62 0.76 0.44 3·15 端面強度[MPa] 161 164 170 180 134 倒角面的Pt[ # m] 1.07 5.00 3.55 5.30 5.57 h面的Pt[从m] 2.26 8.06 3.96 6.53 7.44In the fourth embodiment, the fourth embodiment is not described in detail. The rough grinding is performed by a special grindstone (fixed with a metal bond to fix the #4〇〇 abrasive grain), and the outer edge f'-edge is pressed against the end face of the substrate to move linearly, thereby forming a cross-sectional arc shape. The rough surface is the end face. Then, in the same manner, the outer peripheral surface of the refining grindstone (the lining grease is fixed and the #1 〇〇〇 abrasive grain) which is the second grinding red material in the form shown in Fig. 2 is formed, and is pressed against The roughened end surface portion of the glass substrate is straight-moved, thereby forming an end surface that is ground to a substantially circular arc. The third polishing tool is used to specify the polishing process on the end faces of the glass substrate and the boundary portions on the front and back surfaces. As the third polishing tool, a polishing tool in which a flat diamond polishing plate is fixed to a circular base plate is used, and the diamond-shaped abrasive plate is dispersed in the diamond abrasive grains (#3〇〇〇 abrasive grains). Made of resin material. When the specified polishing process is performed, the angle between the surface and the surface of the glass substrate and the tangent to the chamfered surface (the angle α of the figure: the back side is also the same) is 18. ~twenty two. In the manner of the third grinding tool, the angle of the third grinding tool is appropriately adjusted, and the grinding fluid (grinding water) is supplied to the contact surface of the third grinding tool and the glass substrate. In addition, in order to obtain the desired width dimension of the chamfered surface, the third polishing tool (polishing plate) is rotated at a peripheral speed of 2 〇〇 0 m/min, and is spread over the vicinity of the corner portion of the glass substrate in plan view. The specified grinding process is performed throughout the entire circumference. The glass substrate of Example 4a was obtained as described above. Further, the size of the above abrasive grains is based on JIS R6001: 1998. In this case, the abrasive grains of the first, second, and third polishing tools were different from those of the embodiment 4a in the examples of the servants, 4c, 4d, and the comparative examples. The maximum valley depth Rv of the chamfered surface of the glass substrate shown in the following Table 6 was obtained by using Surfcom 590A manufactured by Tosoh Corporation and Precision Co., Ltd., and measuring the roughness over a measurement length of 5.0 mm, and based on JIS B〇6〇1: The value of each Rv is calculated by 2〇〇1. The maximum valley depth Rv was subjected to evaluation by applying a chamfered surface on one glass substrate under the same conditions, and measuring the average number of times and calculating the average value. Further, at the same time, the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height Pt of the chamfered surface are determined, and the end surface strength of the glass substrate is determined as a test for the glass substrate or thermal stress. The standard for the ease of damage. Regarding the end face strength of the glass substrate, the breaking strength was measured by a two-point bending test using Tensilon RTA 250 manufactured by Odentec, and the damage = degree was taken as the end face strength. The sample for the bending test was a test piece in which the center portion of the side of the surface P of the glass substrate was cut into a size of 8 〇χ 15 mm, and the apex of the end surface (the apex of the substantially circular arc of the cross section) was upward and the negative was negative. The load at the time of damage was measured, and the fracture stress (end surface strength) σ was measured by the calculation of the juice shown by the number 1 mentioned above. 50 201034798 Table 6 below shows the maximum valley depth Rv of the chamfered surface obtained in the above manner, the end face strength port, the maximum cross-sectional height Pt of the chamfered surface, and the maximum cross-sectional height Pt of the end surface. [Table 6] Example 4a Example 4b Example 4c Example 4d Comparative Example RV[um] 1.96 1.62 0.76 0.44 3·15 End face strength [MPa] 161 164 170 180 134 Chamfered surface Pt[# m] 1.07 5.00 3.55 5.30 5.57 h-side Pt [from m] 2.26 8.06 3.96 6.53 7.44

上述表6中，端面的最大剖面高度Pt以及倒角面的最大剖面高度Pt相當於JIS B0601 : 1982中的最大高度 Rmax，因此可認為該端面的最大剖面高度pt以及倒角面的最大剖面高度Pt相當於已述專利文獻1、2的表面最大凹凸。而且’比較例的玻璃基板中’倒角面的最大高度Pt 〇為 5.57 且小於等於7 //m( 0.007 mm)，並且端面的最大高度Pt為7.44 //m且小於等於40 04 mm)，因此滿足已述專利文獻1、2中所記載的數值範圍的條件。然而，本發明者等確認：該比較例的玻璃基板在FPD、有機EL、以及太陽電池等的製造步驟中會頻繁地引起破損。此意味著：比較例的玻璃基板的端面強度不充分。考慮到此情況’可瞭解端面強度需要160 MPa。而且，本發明的實施例4a〜4d中，可瞭解倒角面的最大谷深Rv小於等於 51 201034798 2·0 /zm ’藉此’端面強度超過160 MPa而具有充分的端面強度。因此’可確認：規定玻璃基板的倒角面的最大谷深Rv小於等於2.0 //m，將在以下方面存在較大意義：抑制因玻璃基板的彎曲或不當的溫度分佈所引起的拉伸應力的產生，並儘可能地降低應力集中’防止玻璃基板的破損。而且，對玻璃原板進行雷射切斷來分割而成的玻璃基板中’形成平坦面的端面的面性狀與表背面同樣地接近鏡面，因此可推測：即便於該玻璃基板的該邊界部上與上述同樣地形成倒角面時，只要該倒角面的最大谷深Rv小於〇專於2.0 # m，則可獲得與上述表6所示的較佳結果同等或更佳的結果。雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍内，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。【圖式簡單說明】圖1是本發明的實施形態的玻璃基板的在與側緣部的 ❹ 長度方向正交的方向上切斷的端面的主要部分放大縱剖面圖。圖2是表示切斷玻璃原板而得的玻璃基板、以及對該破璃基板的端面部進行研磨的研磨工具的概略圖。圖3是表示僅進行端面研磨處理的玻璃基板的主要部分的縱剖面圖。圖4是表示對端面處理後的玻璃基板進行倒角面的形 52 201034798 成處理的狀態的概略前視圖。圖5是表示對端面處理後的玻璃基板進行倒角面的形成處理的狀態的概略俯視圖。圖6是表示倒角面形成後的玻璃基板的主要部分的概略俯視圖。圖7是表示用來表現先前問題的玻璃基板的主要部分的概略俯視圖。 Q 圖8是表示用來表現先前問題的玻璃基板的主要部分的縱剖面圖。【主要元件符號說明】 1、11 :玻璃基板 2a z表面 2al :表面（或背面） 2b :背面 3、3b、3bl :端面 3a :端面部〇 4 :倒角面 5 :研磨工具（第1、第2研磨工具） 6 :第3研磨工具 6a .第3研磨工具的旋轉轴 6b :第3研磨工具的研磨面（研磨面） 6bl :磨石的研磨面 6ba :第3研磨工具的研磨面（研磨面）的内周部 0bb :第3研磨工具的研磨面（研磨面）的外周部 201034798 7:作業台（平板） A :倒角面的朝向表面側的切線 B .邊界部z的切線 T :板厚〃上述倒角面的長度方向正交的方向的寬度 W1 ·自邊界部2朝向端面3側的寬度 W2_自邊界部2朝向表面2a側的寬度 X :中心線 z、zl :邊界部 ❹ zx :直線 α:切線與表面所成的角度 Τ ·邊界部ζ的切線Β與表面&所成的角度 54In the above Table 6, the maximum sectional height Pt of the end surface and the maximum sectional height Pt of the chamfered surface correspond to the maximum height Rmax in JIS B0601: 1982, so the maximum sectional height pt of the end surface and the maximum sectional height of the chamfered surface can be considered. Pt corresponds to the surface maximum unevenness of Patent Documents 1 and 2. Moreover, the maximum height Pt 〇 of the 'chamfered surface in the glass substrate of the comparative example is 5.57 and less than or equal to 7 //m (0.007 mm), and the maximum height Pt of the end face is 7.44 //m and less than or equal to 40 04 mm). Therefore, the conditions of the numerical range described in Patent Documents 1 and 2 are satisfied. However, the inventors of the present invention confirmed that the glass substrate of the comparative example frequently causes breakage in the manufacturing steps of FPD, organic EL, and solar cell. This means that the end surface strength of the glass substrate of the comparative example is insufficient. Considering this situation, it can be understood that the end face strength needs 160 MPa. Further, in the embodiments 4a to 4d of the present invention, it is understood that the maximum valley depth Rv of the chamfered surface is less than or equal to 51 201034798 2·0 /zm ', whereby the end face strength exceeds 160 MPa and has sufficient end face strength. Therefore, it can be confirmed that the maximum valley depth Rv of the chamfered surface of the glass substrate is less than or equal to 2.0 //m, which is significant in terms of suppressing tensile stress caused by bending or improper temperature distribution of the glass substrate. Produce and minimize stress concentration as much as possible to prevent breakage of the glass substrate. Further, in the glass substrate in which the glass original plate is subjected to laser cutting and division, the surface property of the end surface on which the flat surface is formed is close to the mirror surface in the same manner as the front and back surfaces. Therefore, it is presumed that even at the boundary portion of the glass substrate When the chamfered surface is formed in the same manner as described above, as long as the maximum valley depth Rv of the chamfered surface is smaller than 〇 and is dedicated to 2.0 #m, results equivalent to or better than those shown in Table 6 above can be obtained. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an enlarged longitudinal cross-sectional view showing an essential part of an end surface of a glass substrate according to an embodiment of the present invention, which is cut in a direction orthogonal to a longitudinal direction of a side edge portion. Fig. 2 is a schematic view showing a glass substrate obtained by cutting a glass original plate and a polishing tool for polishing an end surface portion of the glass substrate. Fig. 3 is a longitudinal cross-sectional view showing a main part of a glass substrate on which only end surface polishing treatment is performed. Fig. 4 is a schematic front view showing a state in which the shape of the chamfered surface of the glass substrate after the end surface treatment is processed. Fig. 5 is a schematic plan view showing a state in which a glass substrate after the end surface treatment is subjected to a forming process of a chamfered surface. Fig. 6 is a schematic plan view showing a main part of a glass substrate after a chamfered surface is formed. Fig. 7 is a schematic plan view showing a main part of a glass substrate for expressing a prior problem. Q Fig. 8 is a longitudinal sectional view showing a main part of a glass substrate for expressing a prior problem. [Description of main component symbols] 1, 11: Glass substrate 2a z surface 2al: surface (or back) 2b: back 3, 3b, 3bl: end face 3a: end face 〇 4: chamfered surface 5: grinding tool (1st The second polishing tool 6a: the third polishing tool 6a. The rotation axis 6b of the third polishing tool: the polishing surface of the third polishing tool (polishing surface) 6b1: the polishing surface 6ba of the grinding stone: the polishing surface of the third polishing tool ( Inner peripheral portion 0bb of the polishing surface): outer peripheral portion of the polishing surface (polishing surface) of the third polishing tool 201034798 7: work table (flat plate) A: tangent line B toward the surface side of the chamfered surface. Tangent line T of the boundary portion z : width W1 in the direction orthogonal to the longitudinal direction of the chamfered surface, width W2 from the boundary portion 2 toward the end surface 3 side, width X from the boundary portion 2 toward the surface 2a side: center line z, zl: boundary Part ❹ zx : line α: angle formed by the tangent to the surface Τ · the tangent of the boundary ζ and the angle formed by the surface &

Claims

201034798 七、申請專利範圍： h種破璃基板，包括表面及背面、以及存在於該兩面的外周立而彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面中的至少一個面與上述端面之間 =界部上形成著倒角面，該倒角面的微觀不平度的十點间又RZ2小於上述端面的微觀不平度的十點高度RZl，且該倒角面的粗糙度曲線要素的平均長度尺㈣大於上述端〇面的⑽度曲線要素的平均長度RSm!。 2. 如申明專利範圍第1項所述的玻璃基板，其中上述倒角面的微觀不平度的十點高度Rz2以及上述端面的微觀不平度的十點高度叫，滿足R衫15 _、且 1J$；RZi/rZ2s1〇〇的關係。 3. 如申請專利範圍第2項所述的玻璃基板，其中上述倒角面的粗糙度曲線要素的平均長度RSm2滿足 RSm2gl〇〇的關係。〇 4‘ 一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表，及背面中的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的溝痕深度Rvk滿足Rvk^〇95 从m的關係。 5·種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表，及背面中的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的粗糙度曲線的均方根斜率 55 201034798ι 滿足RAq$〇_l〇的關係。 6. —種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及月面中的至少一個面與上述端面之間的邊界部上形成倒角面’該倒角面的最大溝痕深度Rv滿足Rv< m的關係。 —.江 7. 如申請專利範圍第1項至第6項中任一項所述的玻璃基板，其中上述倒角面是藉由研磨處理而形成。 ◎ 8. 如申請專利範圍第7項所述的玻璃基板，其中上述倒角面是藉由上述端面的研磨處理後的研磨處理而形成。 9. 如申請專利範圍第8項所述的玻璃基板，其中上述端面在上述表面及背面的外周端的彼此間形成為平坦面。 10. 如申請專利範圍第8項所述的玻璃基板，其中上述端面形成為自上述表面及背面的外周端至板厚 ❹ 中央部而向外側逐漸突出的彎曲面。 11. 如申請專利範圍第1〇項所述的玻璃基板，其中在與上述端面的長度方向正交、且與上述表面及背面正交的剖面中，表面側的邊界部上所形成的上述倒角面的朝向表面側的切線與上述表面所成的角度α、以及背面側的邊界部上所形成的上述倒角面的朝向背面側的切線與上述背面所成的角度/3，分別滿足10。^ α $30°以及10。^ 56 201034798. 石$30°的關係。 12. 如申請專利範圍第u項所述的玻璃基板，其中板厚T滿足〇.〇5 mmSTgl.l mm的關係。 13. 如申請專利範圍第12項所述的玻璃基板，其中板厚T、以及與上述倒角面的長度方向正交的方向的寬度W滿足0.07SW/TS0.30的關係。 14. 一種玻璃基板的製造方法，製造如申請專利範圍第7項所述的玻璃基板，其特徵在於：〇作為研磨上述倒角面的研磨工具，而使用具有與旋轉軸正交的研磨面的旋轉研磨工具，其中上述研磨面的外周部的粗糙度小於内周部的粗糙度’並且對於玻璃基板的表面及背面中的至少一個面與研磨處理後的端面之間的邊界部，使上述旋轉研磨工具一邊沿上述邊界部的長度方向作相對直線移動’一邊繞上述旋轉軸旋轉，藉此，由上述研磨面的外周部以及内周部兩者而形成上述倒角面。 15. —種玻璃基板的製造方法’製造如申請專利範圍 Q 第8項所述的玻璃基板，其特徵在於：對玻璃基板的端面實施粗磨處理後再實施精磨處理，然後，在玻璃基板的表面及背面中的至少一個面與上述端面之間的邊界部上，使用具有較上述精磨處理更細的粒度的研磨工具來實施指定的研磨處理，藉此形成上述隹角面。 57201034798 VII. Patent application scope: h kinds of glass substrate, comprising a surface and a back surface, and an end surface existing on the outer sides of the two sides, the glass substrate is characterized by: at least one of the surface and the back surface A chamfered surface is formed on the boundary portion between the end faces, and a ten-point height RZ1 between the ten points of the microscopic unevenness of the chamfered surface is smaller than a ten-point height RZ1 of the microscopic unevenness of the end surface, and the roughness curve of the chamfered surface The average length of the element (4) is greater than the average length RSm! of the (10) degree curve element of the above-mentioned end face. 2. The glass substrate according to claim 1, wherein the ten-point height Rz2 of the microscopic unevenness of the chamfered surface and the ten-point height of the microscopic unevenness of the end surface are called, satisfying the R-shirt 15 _, and 1 J $;RZi/rZ2s1〇〇 relationship. 3. The glass substrate according to claim 2, wherein the average length RSm2 of the roughness curve elements of the chamfered surface satisfies the relationship of RSm2gl〇〇. 〇4' A glass substrate comprising a front surface and a back surface, and an end surface existing between the outer peripheral ends of the both surfaces, the glass substrate characterized by: a boundary between at least one of the front surface and the back surface A chamfered surface is formed on the portion, and the groove depth Rvk of the chamfered surface satisfies the relationship of Rvk^〇95 from m. 5. A glass substrate comprising: a front surface and a back surface; and an end surface existing between the outer peripheral ends of the both surfaces, the glass substrate characterized by: a boundary portion between at least one of the front surface and the back surface A chamfered surface is formed thereon, and the root mean square slope of the roughness curve of the chamfered surface 55 201034798ι satisfies the relationship of RAq$〇_l〇. 6. A glass substrate comprising: a front surface and a back surface; and an end surface existing between the outer peripheral ends of the both surfaces, the glass substrate characterized by: a boundary between at least one of the surface and the moon surface and the end surface The chamfered surface is formed on the portion. The maximum groove depth Rv of the chamfered surface satisfies the relationship of Rv < m. The glass substrate according to any one of claims 1 to 6, wherein the chamfered surface is formed by a grinding treatment. The glass substrate according to claim 7, wherein the chamfered surface is formed by a polishing treatment after the end surface is polished. 9. The glass substrate according to claim 8, wherein the end surface is formed as a flat surface between the outer peripheral ends of the front surface and the back surface. 10. The glass substrate according to claim 8, wherein the end surface is formed as a curved surface that gradually protrudes outward from an outer peripheral end of the front surface and the back surface to a central portion of the thickness ❹. The glass substrate according to the first aspect of the invention, wherein the glass substrate according to the first aspect of the end surface is perpendicular to the longitudinal direction of the end surface and perpendicular to the front surface and the back surface The angle α between the tangent to the surface on the surface of the corner surface and the surface α, and the angle/3 between the tangent to the back side of the chamfered surface formed on the boundary portion on the back side and the back surface respectively satisfy 10 . ^ α $30° and 10. ^ 56 201034798. Stone $30° relationship. 12. The glass substrate according to claim 5, wherein the sheet thickness T satisfies the relationship of 〇.〇5 mmSTgl.l mm. The glass substrate according to claim 12, wherein the plate thickness T and the width W in a direction orthogonal to the longitudinal direction of the chamfered surface satisfy a relationship of 0.07 SW/TS 0.30. A glass substrate manufacturing method according to claim 7, wherein the enamel is used as a polishing tool for polishing the chamfered surface, and a polishing surface having a perpendicular to a rotation axis is used. a rotary grinding tool in which the roughness of the outer peripheral portion of the polishing surface is smaller than the roughness of the inner peripheral portion and the rotation is made to a boundary portion between at least one of the surface and the back surface of the glass substrate and the end surface after the polishing treatment The polishing tool rotates around the rotation axis while moving linearly along the longitudinal direction of the boundary portion, whereby the chamfered surface is formed by both the outer peripheral portion and the inner peripheral portion of the polishing surface. A method for producing a glass substrate according to claim 8, wherein the glass substrate according to claim 8 is subjected to a rough grinding treatment on the end surface of the glass substrate, followed by a finish grinding treatment, and then, on the glass substrate. On the boundary portion between at least one of the surface and the back surface and the end surface, a predetermined grinding process is performed using an abrasive tool having a finer particle size than the above-described finish grinding treatment, thereby forming the above-mentioned corner surface. 57