TWI480127B - Glass substrate and its production method - Google Patents

Glass substrate and its production method Download PDF

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TWI480127B
TWI480127B TW099106957A TW99106957A TWI480127B TW I480127 B TWI480127 B TW I480127B TW 099106957 A TW099106957 A TW 099106957A TW 99106957 A TW99106957 A TW 99106957A TW I480127 B TWI480127 B TW I480127B
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Taiwan
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glass substrate
chamfered
end surface
polishing
boundary portion
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TW099106957A
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Chinese (zh)
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TW201034798A (en
Inventor
Koichi Shimotsu
Hiroyuki Nakatsu
Taiki Minari
Yuji Takahashi
Michiharu Eta
Hisatoshi Aiba
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Nippon Electric Glass Co
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Priority claimed from JP2009240672A external-priority patent/JP5516940B2/en
Priority claimed from JP2009240674A external-priority patent/JP5516941B2/en
Priority claimed from JP2010000570A external-priority patent/JP5516952B2/en
Priority claimed from JP2010022112A external-priority patent/JP5440786B2/en
Application filed by Nippon Electric Glass Co filed Critical Nippon Electric Glass Co
Publication of TW201034798A publication Critical patent/TW201034798A/en
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Publication of TWI480127B publication Critical patent/TWI480127B/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/08—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
    • B24B9/10—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Liquid Crystal (AREA)

Description

玻璃基板及其製造方法Glass substrate and method of manufacturing same

本發明是有關於一種將表面及背面、與存在於上述兩面的外周端彼此間的端面之間的邊界部的面性狀予以優化而成的玻璃基板及其製造方法。The present invention relates to a glass substrate obtained by optimizing a surface property of a boundary portion between a front surface and a back surface and an end surface existing between outer peripheral ends of the both surfaces, and a method for producing the same.

如眾所周知般，近年來，圖像(影像)顯示裝置中，以液晶顯示器(Liquid Crystal Display，LCD)、電漿顯示器(Plasma Display)(電漿顯示面板，Plasma Display Panel，PDP)、場發射顯示器(Field Emission Display，FED)、有機電致發光(electroluminescent，EL)顯示器(有機發光二極體，Organic Light Emitting Diode，OLED)等為代表的平板顯示器(Flat Panel Display，FPD)成為主流。又，有機EL並非如OLED般藉由薄膜電晶體(Thin Film Transistor，TFT)而閃爍微細的三原色，而是僅以單色(例如白色)發光來亦用作LCD的背光源(back light)或室內照明的光源等的平面光源。As is well known, in recent years, in an image (image) display device, a liquid crystal display (LCD), a plasma display (Plasma Display Panel, Plasma Display Panel, PDP), a field emission display A flat panel display (FPD) represented by (Field Emission Display, FED), an organic electroluminescent (EL) display (Organic Light Emitting Diode, OLED) has become mainstream. Moreover, the organic EL does not flicker the fine three primary colors by a thin film transistor (TFT) like an OLED, but only emits light in a single color (for example, white), and is also used as a backlight of an LCD or A planar light source such as a light source for indoor lighting.

上述FPD或照明均是藉由在玻璃基板的表面上附設包含各個元件或配線的各種構成物等並加以組合而構成。尤其是，自提高生產率的觀點考慮，對FPD進行如下的所謂的多數獲取：於一個大型玻璃基板上形成多個FPD用面板元件等，最後將該等FPD用面板元件等適當地加以分割而形成各個FPD用玻璃面板(glass panel)。該多數獲取中，伴隨於玻璃基板的大型化而使效率提高，因此，甚至 可使用一邊的長度超過3m的玻璃基板。進而，近年來，正在推進FPD本身的大型化，因此，為了適應於阻止重量增加的要求，作為玻璃基板而必須為壁更薄的玻璃基板。又，該種玻璃基板除上述的FPD或有機EL照明以外，甚至亦可用作太陽電池的玻璃基板。Each of the FPD and the illumination is configured by attaching and combining various components including respective elements or wirings on the surface of the glass substrate. In particular, the FPD is subjected to a so-called majority acquisition in which a plurality of FPD panel elements are formed on one large glass substrate, and finally, the FPD panel elements and the like are appropriately divided and formed. A glass panel is used for each FPD. In most of the acquisitions, the efficiency of the glass substrate increases as the size of the glass substrate increases, so that even A glass substrate having a length of more than 3 m on one side can be used. Further, in recent years, the FPD itself has been increasing in size. Therefore, in order to meet the demand for preventing an increase in weight, it is necessary to use a glass substrate having a thinner wall as a glass substrate. Moreover, such a glass substrate can be used as a glass substrate of a solar cell in addition to the above-mentioned FPD or organic EL illumination.

而且，在上述的FPD、有機EL照明、以及太陽電池的製造步驟中，存在例如自壓盤來提昇玻璃基板的步驟或進行熱處理的步驟，上述步驟中，於提昇玻璃基板時會產生如下所示的問題。Further, in the above-described FPD, organic EL illumination, and solar cell manufacturing steps, there are, for example, a step of lifting a glass substrate from a platen or a step of performing heat treatment, and in the above steps, when the glass substrate is lifted, the following is produced. The problem.

即，若玻璃基板的尺寸不斷大型化及薄壁化，則提昇時會產生極大的彎曲，於因上述彎曲而變凸的面上作用著拉伸應力，並且於變凹的面上作用著壓縮應力。於此情形時，玻璃基板具有如下形態，即，表面及背面、以及存在於該兩面的外周端彼此間的端面分別經由邊界部而連接，但在玻璃基板彎曲時，該應力將集中於上述邊界部。因此，當玻璃基板彎曲時，在變凸的表面或背面與連接於表背面的端面的邊界部周邊，將產生較大的拉伸應力。因此，若於玻璃基板的表背兩面與端面的各邊界部周邊存在傷痕、裂痕或者異物等的微小缺陷，則當玻璃基板彎曲時會在該缺陷附近產生大的拉伸應力，並且會於該缺陷處發生應力集中，從而微小缺陷將擴大而一下子致使玻璃基板破損。In other words, when the size of the glass substrate is increased in size and thickness, great bending occurs during lifting, tensile stress acts on the surface which is convex due to the above bending, and compression acts on the concave surface. stress. In this case, the glass substrate has a configuration in which the front surface and the back surface and the end surfaces existing between the outer peripheral ends of the both surfaces are connected via the boundary portion, but when the glass substrate is bent, the stress is concentrated on the boundary. unit. Therefore, when the glass substrate is bent, a large tensile stress is generated around the boundary portion between the convex surface or the back surface and the end surface connected to the front and back surfaces. Therefore, when there are minute defects such as scratches, cracks, or foreign matter on the boundary between the front and back surfaces of the glass substrate and the end surface, a large tensile stress is generated in the vicinity of the defect when the glass substrate is bent, and Stress concentration occurs at the defect, so that the minute defect will expand and the glass substrate will be damaged at once.

即使於上述玻璃基板的熱處理步驟中，亦會產生與上述同樣的問題。即，玻璃基板伴隨溫度上升而膨脹並且伴隨溫度下降而收縮，但若在熱處理步驟中於玻璃基板上發 生不當的溫度分佈，則會在一個玻璃基板內發生膨脹與收縮，從而導致拉伸應力與壓縮應力混在一起。於此情形時，若在玻璃基板的表背兩面與端面的邊界部周邊存在微小缺陷、且在該邊界部上產生拉伸應力，則會於該微小缺陷上發生應力集中而致使玻璃基板破損。Even in the heat treatment step of the above glass substrate, the same problem as described above occurs. That is, the glass substrate expands with an increase in temperature and shrinks with a drop in temperature, but is emitted on the glass substrate in the heat treatment step. Improper temperature distribution causes expansion and contraction in a glass substrate, causing tensile stress to be mixed with compressive stress. In this case, when there are minute defects around the boundary between the front and back surfaces of the glass substrate and the end surface, and tensile stress is generated at the boundary portion, stress concentration occurs in the minute defects, and the glass substrate is damaged.

該種玻璃基板藉由分割而形成為所需的大小，作為該玻璃基板的分割方法，一般而言採用如下的所謂的折割：利用鑽石晶片(diamond chip)等在玻璃基板的表面刻設劃線(scribe line)，以對該劃線作用拉伸應力的方式而施加力，從而將玻璃基板切斷。該種分割方法中，在分割後的玻璃基板的表背兩面與端面的邊界部上，會產生無數的微小缺陷，因此，如上所述，當玻璃基板彎曲時或熱處理時，該玻璃基板破損的概率增大。Such a glass substrate is formed into a desired size by division. As a method of dividing the glass substrate, generally, a so-called folding is employed in which a surface of a glass substrate is patterned by a diamond chip or the like. A scribe line applies a force to apply a tensile stress to the scribe line to cut the glass substrate. In this type of division method, in the boundary portion between the front and back surfaces of the glass substrate after the division and the end surface, numerous minute defects are generated. Therefore, as described above, when the glass substrate is bent or heat-treated, the glass substrate is broken. The probability increases.

為了應對上述問題，根據專利文獻1、2而記載有如下情形：對玻璃基板的表背兩面與端面的邊界部實施研磨處理而形成倒角面，並且使研磨後的倒角面比端面更平滑。詳細而言，根據專利文獻1而記載有如下情形：較好的是，玻璃基板的端面相對於表背兩面而成直角，並且該端面的表面最大凹凸小於等於0.05mm且倒角面的表面最大凹凸小於等於0.007mm。又，根據專利文獻2而記載有如下情形：較好的是，玻璃基板的端面自表背兩面的外周端彎曲而向外側突出，並且該端面的表面最大凹凸小於等於0.04mm且倒角面的表面最大凹凸小於等於0.007mm。In order to cope with the above problems, according to Patent Documents 1 and 2, a boundary portion between the front and back surfaces of the glass substrate is subjected to a polishing process to form a chamfered surface, and the chamfered surface after polishing is smoother than the end surface. . Specifically, according to Patent Document 1, it is preferable that the end surface of the glass substrate is formed at a right angle with respect to both sides of the front and back surfaces, and the maximum unevenness of the surface of the end surface is 0.05 mm or less and the surface of the chamfered surface is the largest. The unevenness is less than or equal to 0.007 mm. Further, according to Patent Document 2, it is preferable that the end surface of the glass substrate is bent outward from the outer peripheral ends of the front and back surfaces, and the surface has a maximum unevenness of 0.04 mm or less and a chamfered surface. The maximum surface roughness is less than or equal to 0.007mm.

[先行技術文獻][Advanced technical literature]

[專利文獻][Patent Literature]

[專利文獻1]日本專利特開平9-278466號公報[Patent Document 1] Japanese Patent Laid-Open No. Hei 9-278466

[專利文獻2]日本專利特開平9-278467號公報[Patent Document 2] Japanese Patent Laid-Open No. Hei 9-278467

然而，專利文獻1、2所記載的玻璃基板為強化玻璃，因此對於未實施強化處理的玻璃基板，即便與上述各文獻同樣地進行形成倒角面的處理，當玻璃基板產生彎曲或不當的溫度分佈時，亦無法確實地避免導致玻璃基板破損的問題。即，可說上述各文獻所記載的倒角面並非為可較佳地適用於包含上述所列舉的用途中所使用的玻璃基板在內的任一種玻璃基板的面性狀。However, since the glass substrate described in the patent documents 1 and 2 is a tempered glass, even if the glass substrate which does not carry out a strengthening process is the process of forming a chamfer surface similar to the above-mentioned each document, the glass substrate generate|occur|produces the bending or improper temperature. At the time of distribution, the problem of causing damage to the glass substrate cannot be surely avoided. In other words, it can be said that the chamfered surface described in each of the above documents is not preferably applicable to the surface properties of any of the glass substrates including the glass substrate used in the above-mentioned applications.

而且，上述各文獻所記載的玻璃基板的倒角面的面性狀是以表面最大凹凸為參數(parameter)而規定的面性狀，基於該種規定的面性狀如上所述，無法確實地阻止玻璃基板的破損。即，不能說以表面最大凹凸作為參數的情形時本身為最佳，因此即便倒角面的面性狀滿足上述各文獻所記載的規定，亦無法確切地應對因基板的彎曲或不當的溫度分佈而導致的玻璃基板的破損。In addition, the surface property of the chamfered surface of the glass substrate described in each of the above-mentioned documents is a surface property defined by a maximum surface unevenness as a parameter, and the glass properties cannot be reliably prevented as described above based on the predetermined surface properties. Broken. In other words, it cannot be said that the maximum surface unevenness is used as a parameter. Therefore, even if the surface property of the chamfered surface satisfies the specifications described in the above documents, it is impossible to accurately cope with the bending or improper temperature distribution of the substrate. The resulting glass substrate is damaged.

進而，若為上述各文獻中所規定的倒角面的面性狀，則亦有可能導致如下不良情況：在端面研磨時產生並附著於玻璃基板表面的玻璃微粒(glass particle)等在清洗步驟中容易滯留於倒角面上。而且，會因此而導致在乾燥步驟中成為玻璃微粒等附著於玻璃基板表面的狀態，從而亦會導致玻璃基板品質下降的致命缺陷。Further, in the case of the surface properties of the chamfered surface defined in each of the above documents, there is a possibility that glass particles or the like which are generated during the end surface polishing and adhere to the surface of the glass substrate are in the cleaning step. It is easy to stay on the chamfered surface. Further, as a result, the glass fine particles or the like adhere to the surface of the glass substrate in the drying step, which may cause fatal defects in the deterioration of the quality of the glass substrate.

另外，除藉由所述的折割而分割玻璃基板的情形以 外，在例如以下情形中亦會同樣產生如上所述的問題，該情形為：對於如雷射切斷等使用雷射來分割的玻璃基板，在該玻璃基板的邊界部上形成藉由研磨而得的倒角面。In addition, in addition to the case where the glass substrate is divided by the folding described above, In addition, the above-mentioned problem occurs in the case where, for example, a glass substrate which is divided by a laser such as laser cutting is formed on the boundary portion of the glass substrate by grinding. The chamfered surface.

而且，不管發生如上所述的問題的可能性是無法否定的，實際情況是就先前用以適當規定玻璃基板的面性狀的具體方法而言，並未發現最佳方法。Moreover, the possibility that the above-described problem occurs cannot be denied, and the actual situation is that the best method has not been found in the conventional method for appropriately specifying the surface properties of the glass substrate.

本發明鑒於上述情形而以下述作為技術性課題：將自玻璃基板的表面及背面而跨過端面的邊界面(倒角面)的面性狀優化，藉此無論是否實施了強化處理，均可確實地防止因玻璃基板的彎曲或不當的溫度分佈而導致發生破損，並且亦解決玻璃微粒的問題。In view of the above, the present invention has a technical problem of optimizing the surface properties of the boundary surface (chamfered surface) across the end surface from the front surface and the back surface of the glass substrate, thereby ensuring whether or not the reinforcing treatment is performed. It is prevented from being damaged due to bending or improper temperature distribution of the glass substrate, and the problem of the glass particles is also solved.

為解決上述技術性課題而發明的第1發明是一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面中的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的微觀不平度的十點高度(ten-point height of irregularities)Rz2 小於上述端面的微觀不平度的十點高度Rz1 ，且該倒角面的粗糙度曲線要素的平均長度RSm2 大於上述端面的粗糙度曲線要素的平均長度RSm1 。另外，關於表面粗糙度，使用東京精密公司製造的Surfcom590A來進行測定(以下同樣)。又，此處微觀不平度的十點高度Rzjis(Rz1 、Rz2 )以及粗糙度曲線要素的平均長度RSm(RSm1 、RSm2 )是依據日本工業標準(JIS，Japanese industry standard，)B0601：2001(以下同樣)。進而，所謂「倒角面」是指對該邊界部實施倒角加工而得的倒角部的表面(以下同樣)。According to a first aspect of the invention, in order to solve the above problems, a glass substrate includes a front surface and a back surface, and an end surface existing between the outer peripheral ends of the both surfaces, and the glass substrate is characterized in that at least the surface and the back surface are A chamfered surface is formed on a boundary portion between the one surface and the end surface, and a ten-point height of irregularities Rz 2 of the chamfered surface is smaller than a ten-point height of the microscopic unevenness of the end surface Rz 1 , and an average length RSm 2 of the roughness curve elements of the chamfered surface is larger than an average length RSm 1 of the roughness curve elements of the end faces. In addition, the surface roughness was measured using Surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd. (the same applies hereinafter). Moreover, the ten-point height Rzjis (Rz 1 , Rz 2 ) of the microscopic unevenness and the average length RSm (RSm 1 , RSm 2 ) of the roughness curve elements are based on Japanese Industrial Standard (JIS). 2001 (the same below). Further, the "chamfered surface" refers to a surface of a chamfered portion obtained by chamfering the boundary portion (the same applies hereinafter).

根據上述構成，不僅玻璃基板的表面及背面中的至少一個面與端面之間的邊界部上所形成的倒角面的微觀不平度的十點高度小於端面的微觀不平度的十點高度，該倒角面的粗糙度曲線要素的平均長度亦大於端面的粗糙度曲線要素的平均長度。如此，以微觀不平度的十點高度Rzjis及粗糙度曲線要素的平均長度RSm為參數，而對倒角面的面性狀與端面的面性狀的關係加以規定，藉此可有效地避免如下不良情況：以該邊界部為起點而產生缺損或裂痕，從而導致玻璃基板缺損或破損；玻璃片或玻璃微粒自該邊界部剝離去除；在清洗步驟中玻璃微粒等滯留於該邊界部上；以及在乾燥步驟中玻璃微粒等附著於玻璃基板的表面而導致品質下降等。而且，該第1發明的玻璃基板無論實施或不實施強化處理(熱強化處理)，均可獲得如上所述的優勢。According to the above configuration, not only the ten-point height of the microscopic unevenness of the chamfered surface formed on the boundary portion between at least one of the front surface and the back surface of the glass substrate but the microscopic unevenness of the end surface is less than ten points. The average length of the roughness curve elements of the chamfered surface is also greater than the average length of the roughness curve elements of the end face. In this way, the ten-point height Rzjis of the microscopic unevenness and the average length RSm of the roughness curve element are used as parameters, and the relationship between the surface property of the chamfered surface and the surface property of the end surface is defined, whereby the following problems can be effectively avoided. : a defect or a crack is generated from the boundary portion, thereby causing a defect or breakage of the glass substrate; the glass piece or the glass particle is peeled off from the boundary portion; the glass particles or the like are retained on the boundary portion in the cleaning step; and being dried In the step, glass fine particles or the like adhere to the surface of the glass substrate to cause deterioration in quality and the like. Further, the glass substrate of the first invention can achieve the above advantages regardless of whether or not the strengthening treatment (heat strengthening treatment) is performed or not.

於該第1發明中，較好的是上述倒角面的微觀不平度的十點高度Rz2 及上述端面的微觀不平度的十點高度Rz1 滿足Rz2 ≦1.5μm、且1.5≦Rz1 /Rz2 ≦10.0的關係。In the first invention, it is preferable that the ten-point height Rz 2 of the microscopic unevenness of the chamfered surface and the ten-point height Rz 1 of the microscopic unevenness of the end surface satisfy Rz 2 ≦ 1.5 μm and 1.5 ≦ Rz 1 /Rz 2 ≦10.0 relationship.

如此，藉由使上述邊界部上所形成的倒角面的微觀不平度的十點高度Rz2 小於等於1.5μm，而更確實地抑制以該邊界部為起點的玻璃基板的破損等，並使端面周邊的破壞強度上升，並且亦可更有效地避免於該邊界部上產生 或滯留玻璃微粒等的問題。而且，若端面的微觀不平度的十點高度Rz1 除以倒角面的微觀不平度的十點高度而得的值(Rz1 /Rz2 )小於1.5，則由形成著倒角面而帶來的端面周邊的破壞強度的上升效果減少。相對於此，若Rz1 /Rz2 超過10.0，則倒角面與端面的粗糙度之差增大，於該兩面的邊界上有可能會因新的應力集中而引起破損。因此，較好的是Rz1 /Rz2 處於上述數值範圍內。By setting the ten-point height Rz 2 of the microscopic unevenness of the chamfered surface formed on the boundary portion to 1.5 μm or less, it is possible to more reliably suppress damage or the like of the glass substrate starting from the boundary portion. The breaking strength around the end face is increased, and the problem of generating or retaining glass particles or the like on the boundary portion can be more effectively prevented. Further, if the value (Rz 1 /Rz 2 ) obtained by dividing the ten-point height Rz 1 of the microscopic unevenness of the end face by the ten-point height of the microscopic unevenness of the chamfered surface is less than 1.5, the chamfered surface is formed. The effect of increasing the damage strength around the end face is reduced. On the other hand, when Rz 1 /Rz 2 exceeds 10.0, the difference between the roughness of the chamfered surface and the end surface increases, and there is a possibility that the boundary between the both surfaces may be damaged by new stress concentration. Therefore, it is preferred that Rz 1 /Rz 2 is in the above numerical range.

又，於該第1發明中，較好的是上述指定研磨面的粗糙度曲線要素的平均長度RSm2 滿足RSm2 ≧100μm的關係。Further, in the first aspect of the invention, it is preferable that the average length RSm 2 of the roughness curve elements of the predetermined polishing surface satisfies the relationship of RSm 2 ≧ 100 μm.

若如此，則可更有效地避免以該邊界部為起點的玻璃基板的破損等、以及於該邊界部上產生或滯留玻璃微粒等的問題。尤其是藉由RSm2 ≧100μm，而使倒角面的起伏凹凸的間隔(週期)增大，表面積受到抑制，因此可有效地避免玻璃微粒附著於有效面(表面)上的不良情況。於此情形時，較好的是粗糙度曲線要素的平均長度之比、即RSm1 /RSm2 大於等於0.1且小於等於0.7。即，若RSm1 /RSm2 小於0.1，則端面與倒角面的起伏凹凸的間隔之差增大，於該兩者的邊界上表面性狀將急劇變化，因此該邊界上將產生新的破損起點。相對於此，若RSm1 /RSm2 超過0.7，則於端面與倒角部之間，起伏凹凸的間隔之差減小，結果，並未藉由倒角面的形成而高效地去除凹凸，從而破壞強度的上升效果將變得不充分。因此，較好的是RSm1 /RSm2 處於上述數值範圍內。In this manner, it is possible to more effectively avoid the problem of breakage of the glass substrate starting from the boundary portion and the like, or generation or retention of glass fine particles at the boundary portion. In particular, by RSm 2 ≧ 100 μm, the interval (period) of the undulations of the chamfered surface is increased, and the surface area is suppressed, so that the adhesion of the glass fine particles to the effective surface (surface) can be effectively avoided. In this case, it is preferable that the ratio of the average length of the roughness curve elements, that is, RSm 1 /RSm 2 is 0.1 or more and 0.7 or less. In other words, when RSm 1 /RSm 2 is less than 0.1, the difference between the undulations of the end faces and the chamfered surfaces increases, and the surface properties abruptly change at the boundary between the two, so that a new breakage point is generated at the boundary. . On the other hand, when RSm 1 /RSm 2 exceeds 0.7, the difference in the interval between the undulations and the unevenness is reduced between the end surface and the chamfered portion, and as a result, the unevenness is not efficiently removed by the formation of the chamfered surface. The effect of increasing the damage strength will become insufficient. Therefore, it is preferred that RSm 1 /RSm 2 be within the above numerical range.

為解決上述技術性課題而發明的第2發明是一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的突出谷部深度Rvk滿足Rvk≦0.95μm的關係。此處，突出谷部深度Rvk是依據JIS B0671-2：2002(以下同樣)。According to a second aspect of the invention, in order to solve the above problems, a glass substrate includes a front surface and a back surface, and an end surface existing between the outer peripheral ends of the both surfaces, and the glass substrate is characterized by at least one of the front surface and the back surface. A chamfered surface is formed on the boundary portion between the surface and the end surface, and the protruding valley depth Rvk of the chamfered surface satisfies the relationship of Rvk ≦ 0.95 μm. Here, the protruding valley depth Rvk is based on JIS B0671-2:2002 (the same applies hereinafter).

根據該種構成，玻璃基板的邊界部上所形成的倒角面的面性狀是使用突出谷部深度Rvk作為參數來進行規定，而且規定為該Rvk小於等於0.95μm，由於玻璃基板具有該種倒角面，因此可儘可能地抑制因該玻璃基板的彎曲或不當的溫度分佈而導致破損、以及因玻璃微粒而導致品質下降的問題。即，突出谷部深度Rvk成為如下的指標的值，該指標表示較面的平均凹凸更深的部分為哪種程度，且該值越大，則越存在異常深的谷部分。而且，若邊界部為具有該種異常谷部分的面性狀，則當因彎曲或不當的溫度分佈而導致該邊界部上產生拉伸應力時，在異常深的谷部分上會發生應力集中，因此容易發生破損，並且玻璃微粒將容易殘存並滯留在該異常深的谷部分。然而，若如上所述邊界部上所形成的倒角面的突出谷部深度Rvk小於等於0.95μm，則邊界部上不存在異常深的谷部分，因此於邊界部上即便作用有拉伸應力，亦不易發生應力集中，並且不易殘存並滯留玻璃微粒。另外，自上述觀點考慮，更好的是邊界部上所形成的倒角面的突出谷部深度Rvk小於等 於0.20μm。又，有效的是玻璃基板的邊界部的突出谷部深度Rvk小於與該邊界部的倒角面連接的端面的突出谷部深度Rvk。即，在因玻璃基板的彎曲或不當的溫度分佈而導致在該玻璃基板的內部產生應力時，判明上述應力最容易產生於邊界部附近。因此，若使邊界部的突出谷部深度Rvk小於端面的突出谷部深度Rvk，則自容易發生應力集中的邊界部起，導致該應力集中的異常深的谷部分減少。其結果，可儘可能地降低因玻璃基板的彎曲或不當的溫度分佈而導致的破損，而且，亦可避免玻璃微粒殘存並滯留的問題。另外，即便玻璃基板的端面的突出谷部深度Rvk小於邊界部的倒角面的突出谷部深度Rvk，就面性狀的觀點考慮雖會成為超級品質，但不會在破損或玻璃微粒的問題方面造成妨礙。而且，該第2發明的玻璃基板中，亦為無論實施或不實施強化處理(熱強化處理)，均可獲得如上所述的優點。According to this configuration, the surface property of the chamfered surface formed on the boundary portion of the glass substrate is defined by using the protruding valley depth Rvk as a parameter, and the Rvk is defined to be 0.95 μm or less, since the glass substrate has the species Since the angle is the surface, it is possible to suppress the damage due to the bending or improper temperature distribution of the glass substrate as much as possible, and the problem of deterioration in quality due to the glass fine particles. In other words, the protruding valley depth Rvk is a value of an index indicating how much the deeper average unevenness is, and the larger the value, the more abnormally deep valley portion. Further, when the boundary portion has a planarity having such an abnormal valley portion, when tensile stress is generated at the boundary portion due to bending or improper temperature distribution, stress concentration occurs in an abnormally deep valley portion, so that stress concentration occurs. It is prone to breakage, and the glass particles will easily remain and remain in the abnormally deep valley portion. However, if the protruding valley depth Rvk of the chamfered surface formed on the boundary portion is less than or equal to 0.95 μm as described above, there is no abnormally deep valley portion on the boundary portion, and therefore even if tensile stress acts on the boundary portion, Stress concentration is also less likely to occur, and it is difficult to retain and retain glass particles. Further, from the above viewpoints, it is more preferable that the protruding valley depth Rvk of the chamfered surface formed on the boundary portion is smaller than or equal to At 0.20 μm. Further, it is effective that the protruding valley portion depth Rvk at the boundary portion of the glass substrate is smaller than the protruding valley portion depth Rvk of the end surface connected to the chamfered surface of the boundary portion. That is, when stress is generated in the inside of the glass substrate due to bending of the glass substrate or improper temperature distribution, it is found that the stress is most likely to occur in the vicinity of the boundary portion. Therefore, when the protruding valley portion depth Rvk of the boundary portion is made smaller than the protruding valley portion depth Rvk of the end surface, the abnormally deep valley portion of the stress concentration is reduced from the boundary portion where the stress concentration is likely to occur. As a result, damage due to bending or improper temperature distribution of the glass substrate can be reduced as much as possible, and the problem that the glass fine particles remain and remain can be avoided. In addition, even if the protruding valley depth Rvk of the end surface of the glass substrate is smaller than the protruding valley depth Rvk of the chamfered surface of the boundary portion, the surface property is super quality, but it is not in the problem of damage or glass particles. Caused by hindrance. Further, in the glass substrate of the second aspect of the invention, the above-described advantages can be obtained regardless of whether or not the strengthening treatment (heat strengthening treatment) is performed or not.

為解決上述技術性課題而發明的第3發明是一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面中的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的粗糙度曲線的均方根斜率R△q滿足R△q≦0.10的關係。此處，粗糙度曲線的均方根斜率R△q是依據JIS B0601-2001(以下同樣)。According to a third aspect of the invention, there is provided a glass substrate comprising: a front surface and a back surface; and an end surface existing between the outer peripheral ends of the both surfaces, wherein the glass substrate is characterized in that at least the surface and the back surface A chamfered surface is formed on a boundary portion between the one surface and the end surface, and a root mean square slope RΔq of the roughness curve of the chamfered surface satisfies a relationship of RΔq ≦ 0.10. Here, the root mean square slope RΔq of the roughness curve is based on JIS B0601-2001 (the same applies hereinafter).

根據該種構成，玻璃基板的邊界部上所形成的倒角面的面性狀是使用粗糙度曲線的均方根斜率R△q作為參數 來進行規定，而且規定為該R△q小於等於0.10，由於玻璃基板具有該種倒角面，因此可儘可能地抑制因該玻璃基板的彎曲或不當的溫度分佈而導致破損、以及因玻璃微粒而導致品質下降的問題。即，粗糙度曲線的均方根斜率R△q是粗糙度曲線上的各凹部以及各凸部的相對於該面的法線的斜率的平均值，因此，該值越大，則凹凸的傾斜越陡峭，即，意味著谷底成尖銳的形狀的凹部較多。而且，若邊界部為該種性狀的倒角面，則當因彎曲或不當的溫度分佈而導致該邊界部上產生拉伸應力時，於谷底成尖銳的形狀的凹部上發生應力集中，因此容易發生破損，並且該凹部上容易殘存並滯留玻璃微粒。然而，若如上所述邊界部上所形成的倒角面的粗糙度曲線的均方根斜率R△q小於等於0.10，則邊界部上具有尖銳的谷底的凹部將減少至不會成為問題的程度，因此於邊界部上即便作用有拉伸應力，亦難以發生應力集中，並且難以殘存並滯留玻璃微粒。另外，就上述觀點考慮，更好的是邊界部上所形成的倒角面的粗糙度曲線的均方根斜率R△q小於等於0.05。而且，有效的是玻璃基板的邊界面的粗糙度曲線的均方根斜率R△q小於與該邊界面連接的端面的粗糙度曲線的均方根斜率R△q。即，於因玻璃基板的彎曲或不當的溫度分佈而導致在該玻璃基板的內部產生應力時，判明上述應力最容易產生於邊界部附近。因此，只要邊界部的粗糙度曲線的均方根斜率R△q小於端面的粗糙度曲線的均方根斜率R△q，則自容易產生應力集中的邊界部起，導致該應力集中的 谷底尖銳的凹部減少。其結果，可儘可能地降低因玻璃基板的彎曲或不當的溫度分佈而導致的破損，而且，亦可避免玻璃微粒殘存並滯留的問題。另外，即便玻璃基板的端面的粗糙度曲線的均方根斜率R△q小於邊界部的倒角面的粗糙度曲線的均方根斜率R△q，就面性狀的觀點考慮雖然會成為超級品質，但不會在破損或玻璃微粒的問題方面造成妨礙。而且，該第3發明的玻璃基板中，亦為無論實施或不實施強化處理(熱強化處理)，均可獲得如上所述的優點。According to this configuration, the surface property of the chamfered surface formed on the boundary portion of the glass substrate is the root mean square slope RΔq using the roughness curve as a parameter. The provision is made, and it is specified that the R Δq is less than or equal to 0.10. Since the glass substrate has such a chamfered surface, it is possible to suppress damage due to bending or improper temperature distribution of the glass substrate as much as possible, and glass particles. And the problem of quality decline. That is, the root mean square slope RΔq of the roughness curve is an average value of the slopes of the respective concave portions and the convex portions on the roughness curve with respect to the normal line of the surface, and therefore, the larger the value, the inclination of the unevenness The steeper, that is, the greater the number of recesses in which the valley bottom has a sharp shape. Further, when the boundary portion is a chamfered surface of the above-described nature, when tensile stress is generated in the boundary portion due to bending or improper temperature distribution, stress concentration occurs in the concave portion having a sharp bottom in the valley bottom, so that it is easy Breakage occurs, and the glass particles are easily retained and retained in the concave portion. However, if the root mean square slope RΔq of the roughness curve of the chamfered surface formed on the boundary portion is less than or equal to 0.10 as described above, the concave portion having the sharp valley bottom at the boundary portion is reduced to such an extent that it does not become a problem. Therefore, even if a tensile stress acts on the boundary portion, stress concentration hardly occurs, and it is difficult to retain and retain the glass fine particles. Further, from the above viewpoints, it is more preferable that the root mean square slope RΔq of the roughness curve of the chamfered surface formed on the boundary portion is 0.05 or less. Further, it is effective that the root mean square slope RΔq of the roughness curve of the boundary surface of the glass substrate is smaller than the root mean square slope RΔq of the roughness curve of the end surface connected to the boundary surface. That is, when stress is generated inside the glass substrate due to bending of the glass substrate or improper temperature distribution, it is found that the stress is most likely to occur in the vicinity of the boundary portion. Therefore, as long as the root mean square slope RΔq of the roughness curve of the boundary portion is smaller than the root mean square slope RΔq of the roughness curve of the end surface, the stress concentration is caused from the boundary portion where the stress concentration is likely to occur. The sharp recess of the valley bottom is reduced. As a result, damage due to bending or improper temperature distribution of the glass substrate can be reduced as much as possible, and the problem that the glass fine particles remain and remain can be avoided. Further, even if the root mean square slope RΔq of the roughness curve of the end surface of the glass substrate is smaller than the root mean square slope RΔq of the roughness curve of the chamfered surface of the boundary portion, the surface quality is considered to be super quality. , but will not cause obstacles in terms of damage or glass particles. Further, in the glass substrate of the third aspect of the invention, the above-described advantages can be obtained regardless of whether or not the strengthening treatment (heat strengthening treatment) is performed or not.

為解決上述技術性課題而發明的第4發明是一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面中的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的最大谷深Rv滿足Rv≦2.0μm的關係。此處，最大谷深Rv是依據JIS B0601-2001(以下同樣)。According to a fourth aspect of the invention, there is provided a glass substrate comprising: a front surface and a back surface; and an end surface existing between the outer peripheral ends of the both surfaces, wherein the glass substrate is characterized in that at least the surface and the back surface A chamfered surface is formed on a boundary portion between the one surface and the end surface, and the maximum valley depth Rv of the chamfered surface satisfies the relationship of Rv ≦ 2.0 μm. Here, the maximum valley depth Rv is based on JIS B0601-2001 (the same applies hereinafter).

根據該種構成，玻璃基板的邊界部上所形成的倒角面的面性狀是使用最大谷深Rv作為參數來規定，而且規定為該Rv小於等於2.0μm，由於玻璃基板具有該種倒角面，因此可儘可能地抑制因該玻璃基板的彎曲或不當的溫度分佈而導致破損、以及因玻璃微粒而導致品質下降的問題。即，於表示上述倒角面的性狀的粗糙度曲線中存在有峰部與谷部，當谷部較深時，若因彎曲或熱而引起的拉伸應力作用於倒角面上，則將於該谷底發生應力集中而使谷部被撕裂，由此導致谷部的撕裂不斷進展，藉此致使玻璃 基板破損。然而，若如上所述倒角面的最大谷深Rv小於等於2.0μm，則倒角面中不會存在因熱或彎曲所引起的拉伸應力而導致撕裂不斷進展般的深度的谷部，從而不僅難以發生玻璃基板的破損，且難以於谷部殘存並滯留玻璃微粒。另外，就上述觀點考慮，更好的是邊界部上所形成的倒角面的最大谷深Rv小於等於1.5μm。而且，有效的是玻璃基板的倒角面的最大谷深Rv小於與該倒角面連接的端面的最大谷深Rv。即，於因玻璃基板的彎曲或不當的溫度分佈而導致在該玻璃基板的內部產生應力時，判明上述應力最容易產生於邊界部附近。因此，只要邊界部(倒角面)的最大谷深Rv小於端面的最大谷深Rv，則自容易發生應力集中的邊界部起，導致該應力集中的較深的谷部將減少或消失。其結果，可儘可能地降低因玻璃基板的彎曲或不當的溫度分佈而導致的破損，而且，亦可避免玻璃微粒殘存並滯留的問題。另外，即便玻璃基板的端面的最大谷深Rv小於邊界部的倒角面的最大谷深Rv，就面性狀的觀點考慮雖然會成為超級品質，但不會在破損或玻璃微粒的問題方面造成妨礙。而且，該第4發明的玻璃基板中，亦為無論實施或不實施強化處理(熱強化處理)，均可獲得如上所述的優點。According to this configuration, the surface property of the chamfered surface formed on the boundary portion of the glass substrate is defined by using the maximum valley depth Rv as a parameter, and the Rv is set to be 2.0 μm or less, since the glass substrate has the chamfered surface. Therefore, it is possible to suppress the damage due to the bending or improper temperature distribution of the glass substrate as much as possible, and the problem of deterioration in quality due to the glass fine particles. That is, in the roughness curve indicating the property of the chamfered surface, there are peaks and valleys, and when the valleys are deep, if tensile stress due to bending or heat acts on the chamfered surface, Stress concentration at the bottom of the valley causes the valley to be torn, thereby causing the tearing of the valley to progress, thereby causing the glass to The substrate is broken. However, if the maximum valley depth Rv of the chamfered surface is less than or equal to 2.0 μm as described above, there is no valley portion in the chamfered surface where the tensile stress due to heat or bending causes the tear to progress. Therefore, it is difficult to cause damage to the glass substrate, and it is difficult to retain the glass particles in the valley portion. Further, from the above viewpoints, it is more preferable that the maximum valley depth Rv of the chamfered surface formed on the boundary portion is 1.5 μm or less. Further, it is effective that the maximum valley depth Rv of the chamfered surface of the glass substrate is smaller than the maximum valley depth Rv of the end surface connected to the chamfered surface. That is, when stress is generated inside the glass substrate due to bending of the glass substrate or improper temperature distribution, it is found that the stress is most likely to occur in the vicinity of the boundary portion. Therefore, as long as the maximum valley depth Rv of the boundary portion (the chamfered surface) is smaller than the maximum valley depth Rv of the end surface, the deep valley portion where the stress concentration is caused will be reduced or disappeared from the boundary portion where the stress concentration is likely to occur. As a result, damage due to bending or improper temperature distribution of the glass substrate can be reduced as much as possible, and the problem that the glass fine particles remain and remain can be avoided. Further, even if the maximum valley depth Rv of the end surface of the glass substrate is smaller than the maximum valley depth Rv of the chamfered surface of the boundary portion, the surface quality is super quality, but it does not hinder the problem of breakage or glass particles. . Further, in the glass substrate of the fourth aspect of the invention, the above-described advantages can be obtained regardless of whether or not the strengthening treatment (heat strengthening treatment) is performed or not.

於以上第1發明~第4發明中的任一項發明中，較好的是上述倒角面是藉由研磨處理而形成。In any one of the first to fourth inventions described above, it is preferable that the chamfered surface is formed by a polishing process.

即，若於玻璃基板的該邊界部上藉由研磨處理而形成倒角面，則藉由實施同一研磨處理，可使該倒角面的面性 狀(第1發明中為Rzjis以及RSm，第2發明中為Rvk，第3發明中為R△q，第4發明中為Rv)均一化，因此可於單個玻璃基板的邊界部上遍及長度方向全長而形成具有均一的面性狀的倒角面。而且，對於多個玻璃基板，亦可與玻璃基板的差異無關，而於各邊界部上形成具有同等的面性狀的倒角面，且可降低品質的不均。That is, when the chamfered surface is formed by the polishing treatment on the boundary portion of the glass substrate, the surface property of the chamfered surface can be obtained by performing the same polishing treatment. In the case of Rzjis and RSm in the first invention, Rvk in the second invention, RΔq in the third invention, and Rv in the fourth invention, it is uniform in the longitudinal direction of the boundary portion of the single glass substrate. A chamfered surface having a uniform surface property is formed over the entire length. Further, regardless of the difference in the glass substrate, the plurality of glass substrates may have chamfered surfaces having the same surface properties on the respective boundary portions, and the quality unevenness can be reduced.

進而，上述倒角面藉由上述端面的研磨處理後的研磨處理而形成為佳。Further, it is preferable that the chamfered surface is formed by a polishing treatment after the polishing treatment of the end surface.

即，首先藉由對玻璃基板的端面進行研磨，而適當地提高該端面的面性狀(第1發明中為減小Rzjis且增大RSm，第2發明中為減小Rvk，第3發明中為減小R△q，第4發明中為減小Rv)，然後藉由研磨而形成倒角面，藉此，相較於上述端面的面性狀而使該倒角面的面性狀更佳，若如此則能夠高效地形成可解決玻璃基板的破損及微粒問題的面性狀。因此，就面性狀的觀點考慮而成為有效率的處理。In other words, first, the end surface of the glass substrate is polished, and the surface properties of the end surface are appropriately increased (in the first invention, Rzjis is decreased and RSm is increased, and in the second invention, Rvk is decreased. In the third invention, When RΔq is decreased, in the fourth invention, Rv) is reduced, and then a chamfered surface is formed by polishing, whereby the surface property of the chamfered surface is better than the surface property of the end surface. In this way, it is possible to efficiently form a surface property that can solve the problem of breakage and fine particles of the glass substrate. Therefore, it is an efficient process from the viewpoint of the surface property.

於上述構成中，上述端面可於上述表面及背面的外周端彼此間形成為平坦面。In the above configuration, the end surface may be formed as a flat surface between the outer peripheral ends of the front surface and the back surface.

若如此，則表面及背面此兩個面與端面之間的各邊界部成為角形狀態，因此就緩和拉伸應力的觀點考慮，於該邊界部上形成倒角面的意義變大。於此情形時，可對玻璃基板的端面實施研磨處理，或者如雷射切斷等般使用雷射來進行玻璃基板的分割時，亦可不對玻璃基板的端面實施研磨處理。即，於利用雷射切斷等來進行玻璃基板的分割 時，形成為平坦面的玻璃基板的端面的面性狀接近於與表面及背面大致同等的面，因此，不對端面進行研磨，而僅於邊界部上藉由研磨而形成倒角面便足夠。In this case, since the boundary portions between the two surfaces and the end surface of the front surface and the back surface are in an angular state, the significance of forming the chamfered surface on the boundary portion is increased from the viewpoint of relaxing the tensile stress. In this case, the end surface of the glass substrate may be subjected to a polishing treatment, or when the glass substrate is divided by a laser as in laser cutting or the like, the end surface of the glass substrate may not be subjected to a polishing treatment. That is, the division of the glass substrate is performed by laser cutting or the like. In the case where the surface of the end surface of the glass substrate formed into a flat surface is close to the surface substantially equal to the surface and the back surface, it is sufficient that the end surface is not polished, and only the chamfered surface is formed by polishing on the boundary portion.

又，上述端面亦可形成為自上述表面及背面的外周端至板厚中央部而向外側逐漸突出的彎曲面。Further, the end surface may be formed as a curved surface that gradually protrudes outward from the outer peripheral end of the front surface and the back surface to the central portion of the thickness.

若如此，則可經由平緩的彎曲部而將倒角面與端面的連接部、以及倒角面與表面(或背面)的連接部連接，因此，於減小倒角面周邊所產生的拉伸應力或應力集中的方面較為有利。In this manner, the connection portion between the chamfered surface and the end surface and the connection portion between the chamfered surface and the surface (or the back surface) can be connected via the gentle curved portion, thereby reducing the stretching generated around the chamfered surface. The aspect of stress or stress concentration is advantageous.

於該種端面形狀的情形時，較好的是，於與上述端面的長度方向正交、且與上述表面及背面正交的剖面中，表面側的邊界部上所形成的上述倒角面的朝向表面側的切線與上述表面所成的角度α、以及背面側的邊界部上所形成的上述倒角面的朝向背面側的切線與上述背面所成的角度β分別滿足10°≦α≦30°及10°≦β≦30°的關係。In the case of such an end surface shape, it is preferable that the chamfered surface formed on the boundary portion on the front surface side is perpendicular to the longitudinal direction of the end surface and perpendicular to the front surface and the back surface. An angle α between the tangent to the front surface and the angle α formed by the surface, and a tangent to the back surface of the chamfered surface formed on the boundary portion on the back side and the angle β formed by the back surface respectively satisfy 10° ≦ α ≦ 30 ° and 10 ° ≦ β ≦ 30 ° relationship.

即，例如圖7中俯視觀察所示，僅對至板厚中央部向外側而逐漸突出的剖面圓弧狀的端面3b1進行研磨後，該端面3b1與表面(或背面)2a1的邊界部z1形成凹凸形狀，並且該邊界部z1本來存在於直線zx所表示的位置上，但實際上偏向表面(或背面)2a1的中央側而存在。該種現象是因如下情形而產生的：於玻璃基板11的端面3b1研磨時，磨石的研磨粒陷入至較本來應成為邊界的直線zx更靠近表面(或背面)2a1側的位置；以及磨石的研磨粒使表面(或背面)2a1側部分剝離。然而，如圖8縱剖面所示， 若磨石的研磨面6b1以45°左右的斜率接觸於玻璃基板11的表面(或背面)2a1與端面3b1的本來應成為邊界的上述直線zx附近，則實際的邊界部z1與磨石的研磨面6b1並不接觸。因此，磨石無法對該凹凸狀的邊界部z1進行研磨，或停留在僅可對邊界部z1的一部分進行研磨，其結果，導致如下情形：凹凸狀的邊界部z並未完全地研磨，於該邊界部上無法形成由指定的研磨面所構成的倒角面。由此，較好的是使上述角度α、β小於等於45°，但若該角度α、β小於10°，則藉由研磨而形成倒角面時，端面側的研磨區域變窄，且該端面與表面(或背面)的各邊界部上所殘存的玻璃碎屑(chipping)或者缺損或裂痕等的去除變得不充分，因此，為避免上述情形，必須將研磨區域擴大至表面側(或背面側)，作為邊界部而言成為不佳的形態。相對於此，若上述角度α、β超過30°，則藉由研磨而形成倒角面時，如果未不當地擴大端面側的研磨區域，則無法形成該倒角面，從而導致生產率的惡化。因此，該角度α、β只要處於上述數值範圍內，則不會發生上述不良情況。就上述觀點考慮，更好的是使上述角度α、β的下限值為15°，且使上限值為20°。In other words, for example, as shown in a plan view of FIG. 7, only the arcuate end surface 3b1 that gradually protrudes outward from the center portion of the thickness is polished, and then the boundary portion z1 between the end surface 3b1 and the surface (or the back surface) 2a1 is formed. The concavo-convex shape is present in the boundary portion z1 originally at the position indicated by the straight line zx, but actually exists on the center side of the surface (or the back surface) 2a1. This phenomenon is caused by the fact that when the end surface 3b1 of the glass substrate 11 is polished, the abrasive grains of the grindstone fall into a position closer to the surface (or the back surface) 2a1 side than the straight line zx which should be the boundary; The abrasive grains of the stone peel off the surface (or the back surface) 2a1 side. However, as shown in the longitudinal section of Figure 8, When the polished surface 6b1 of the grindstone contacts the vicinity of the straight line zx which should be the boundary of the surface (or the back surface) 2a1 and the end surface 3b1 of the glass substrate 11 with a slope of about 45°, the actual boundary portion z1 and the grinding of the grindstone Face 6b1 is not in contact. Therefore, the grindstone cannot grind the uneven boundary portion z1 or stay on only a part of the boundary portion z1, and as a result, the boundary portion z of the uneven portion is not completely polished. A chamfered surface composed of a specified polishing surface cannot be formed on the boundary portion. Therefore, it is preferable that the angles α and β are equal to or less than 45°. However, when the angles α and β are less than 10°, when the chamfered surface is formed by polishing, the polishing region on the end surface side is narrowed, and The removal of glass chipping or defects or cracks remaining on the boundary portions of the end surface and the surface (or the back surface) is insufficient, and therefore, in order to avoid the above, it is necessary to enlarge the polishing region to the surface side (or The back side) is a poor form as a boundary portion. On the other hand, when the angles α and β exceed 30°, when the chamfered surface is formed by polishing, if the polishing region on the end surface side is not unduly enlarged, the chamfered surface cannot be formed, and the productivity is deteriorated. Therefore, if the angles α and β are within the above numerical range, the above-described problems do not occur. From the above viewpoints, it is more preferable to make the lower limit of the above-mentioned angles α and β 15° and the upper limit to 20°.

於以上構成中，較好的是板厚T滿足0.05mm≦T≦1.1mm的關係。In the above configuration, it is preferable that the sheet thickness T satisfies the relationship of 0.05 mm ≦ T ≦ 1.1 mm.

即，若玻璃基板的板厚T超過1.1mm，則玻璃基板的板厚T對該玻璃基板的強度的影響增大，有可能無法充分發揮上述的用以與導致玻璃基板破損的、因彎曲或不當 的溫度分佈所引起的應力相對抗的本發明(第1~第4發明)特有的效果。相對於此，若玻璃基板的板厚T小於0.05mm，則將難以對表面及背面兩個面與端面的各自之間的邊界部上實施適當的研磨處理。因此，只要玻璃基板的板厚T處於上述數值範圍內，則可避免上述不良情況。另外，就上述觀點考慮，更好的是使玻璃基板的板厚T的下限值為0.1mm，且使上限值為0.7mm。In other words, when the thickness T of the glass substrate exceeds 1.1 mm, the influence of the thickness T of the glass substrate on the strength of the glass substrate increases, and the above-described bending or bending of the glass substrate may not be sufficiently exhibited. improper The stresses caused by the temperature distribution are particularly resistant to the effects of the present invention (first to fourth inventions). On the other hand, when the thickness T of the glass substrate is less than 0.05 mm, it is difficult to perform an appropriate polishing treatment on the boundary portion between the front surface and the back surface. Therefore, as long as the sheet thickness T of the glass substrate is within the above numerical range, the above-described problems can be avoided. Further, from the above viewpoints, it is more preferable that the lower limit of the thickness T of the glass substrate is 0.1 mm and the upper limit is 0.7 mm.

又，較好的是板厚T、以及與上述倒角面的長度方向正交的方向的寬度W滿足0.07≦W/T≦0.30的關係。Further, it is preferable that the plate thickness T and the width W in the direction orthogonal to the longitudinal direction of the chamfered surface satisfy a relationship of 0.07 ≦ W / T ≦ 0.30.

即，若W/T小於0.07，則倒角面的形成區域變得不充分，由於倒角面的存在而帶來的端面強度的上升效果將減少。相對於此，若W/T超過0.30，則形成倒角面所需要的時間增長，生產率下降。因此，只要W/T處於上述數值範圍內，則可避免上述不良情況。另外，就上述觀點考慮，更好的是滿足0.10≦W/T≦0.20的關係。In other words, when W/T is less than 0.07, the formation region of the chamfered surface becomes insufficient, and the effect of increasing the end face strength due to the presence of the chamfered surface is reduced. On the other hand, when W/T exceeds 0.30, the time required for forming a chamfered surface increases, and productivity falls. Therefore, as long as the W/T is within the above numerical range, the above disadvantage can be avoided. Further, from the above viewpoints, it is more preferable to satisfy the relationship of 0.10 ≦ W / T ≦ 0.20.

另外，包括以上構成的玻璃基板較好的是遍及其邊的全長而形成著倒角面，但對於板厚較薄的玻璃基板等而言，考慮到藉由研磨而形成倒角面的難度，亦可將俯視觀察下的角(corner)部附近自倒角面的形成部位中除外。Further, it is preferable that the glass substrate having the above configuration has a chamfered surface formed over the entire length of the side surface, but it is considered that the glass substrate having a small thickness is difficult to form a chamfered surface by polishing. The vicinity of the corner portion in a plan view may be excluded from the formation portion of the chamfered surface.

另一方面，為解決上述技術性課題而發明的方法的發明是一種玻璃基板的製造方法，製造形成上述倒角面而成的玻璃基板，其特徵在於：作為研磨上述倒角面的研磨工具，使用具有與旋轉軸正交的研磨面的旋轉研磨工具，其中上述研磨面的外周部的粗糙度小於內周部的粗糙度，並 且對於玻璃基板的表面及背面中的至少一個面與研磨處理後的端面之間的邊界部，上述旋轉研磨工具一邊沿上述邊界部的長度方向相對直線移動，一邊繞上述旋轉軸旋轉，藉此，由上述研磨面的外周部以及內周部兩者而形成上述倒角面。On the other hand, the invention of the method for solving the above-mentioned technical problems is a method for producing a glass substrate, and a glass substrate obtained by forming the chamfered surface is used as a polishing tool for polishing the chamfered surface. a rotary grinding tool having an abrasive surface orthogonal to the rotation axis, wherein a roughness of an outer peripheral portion of the polishing surface is smaller than a roughness of the inner circumferential portion, and In the boundary portion between at least one of the front surface and the back surface of the glass substrate and the end surface after the polishing process, the rotary polishing tool rotates around the rotation axis while moving linearly along the longitudinal direction of the boundary portion. The chamfered surface is formed by both the outer peripheral portion and the inner peripheral portion of the polishing surface.

根據上述方法，由於旋轉研磨工具的研磨面(相磨面)與旋轉軸正交，且該研磨面的外周部的粗糙度小於內周部的粗糙度，因此，當該旋轉研磨工具對於上述玻璃基板的邊界部，一邊沿上述邊界部的長度方向相對直線移動一邊繞旋轉軸旋轉而進行該邊界部的研磨處理時，首先藉由研磨面的粗糙度較小的外周部，進行該邊界部的微細磨削(微細研磨)而獲得所謂的「均勻」效果。藉此，於對玻璃基板的邊界部形成倒角面的初始階段，抑制不當的應力集中，且抑制因玻璃基板的顫動而導致的缺損(初始碎屑)或裂痕等的發生，並且於該邊界部上形成與初始階段相當的倒角面。作為下一階段，旋轉研磨工具相對直線移動，藉此，研磨面中的粗糙度較大的內周部將抵接於與上述初始階段相當的倒角面，而進行相對的粗磨。藉由該相對的粗磨，而提高研磨的前進速度，因此，倒角面形成時間將縮短，並且於相對的粗磨開始時，該邊界部受到微細研磨而進行上述的「均勻」，因此不會導致缺損或裂痕等的發生或該等的進展，而是順利地開始進行相對的粗磨。作為最終階段，該旋轉研磨工具進而相對直線移動，藉此，研磨面中的上述粗糙度較小的外周部將抵接於實施了相對的粗 磨的倒角面而進行精磨。藉此，對因該旋轉研磨工具的振動而自研磨面的移動方向後端作用於倒角面上所產生的朝向該倒角面的後端的缺損或裂痕等進行抑制，並且將因相對的粗磨而使倒角面上殘存的微小的磨削粉或玻璃粉去除。如此，伴隨單個旋轉研磨工具的相對直線移動，而對玻璃基板的邊界部依序實施包括微細研磨(均勻)、相對的粗磨、以及精磨的一連串研磨處理，藉此，可抑制缺損或裂痕等的產生，並且以短時間進行倒角面的形成處理，因此，將確保裝置的簡化以及倒角面周邊的良好品質，並且可謀求生產率的大幅提高。另外，該旋轉研磨工具與玻璃基板中的任一者或兩者可直線移動，在玻璃基板的邊界部的長度方向的尺寸大於等於1000mm的大型玻璃基板的情形時，有利的是在將玻璃基板固定於作業臺上等的狀態下，使旋轉研磨工具沿該玻璃基板的邊界部的長度方向移動；反之，於小型玻璃基板的情形時，有利的是固定設置該旋轉研磨工具，並使玻璃基板以橫穿研磨面的方式而直線移動。而且，較好的是，於使用彈簧(spring)等彈性體來彈性支撐旋轉研磨工具的狀態下，使該旋轉研磨工具壓接於上述玻璃基板的邊界部，藉此可使倒角面的面性狀變得較佳。According to the above method, since the polishing surface (phase grinding surface) of the rotary polishing tool is orthogonal to the rotation axis, and the roughness of the outer peripheral portion of the polishing surface is smaller than the roughness of the inner circumferential portion, when the rotary grinding tool is used for the glass When the boundary portion of the substrate is rotated about the rotation axis while moving in the longitudinal direction of the boundary portion and the polishing process is performed on the boundary portion, the boundary portion is first formed by the outer peripheral portion having a small roughness of the polishing surface. Fine grinding (fine grinding) to obtain a so-called "uniform" effect. In this way, in the initial stage of forming the chamfered surface at the boundary portion of the glass substrate, it is possible to suppress improper stress concentration, and to suppress occurrence of defects (initial debris), cracks, and the like due to chattering of the glass substrate, and at the boundary. A chamfered surface corresponding to the initial stage is formed on the portion. In the next stage, the rotary polishing tool moves in a straight line, whereby the inner peripheral portion having a large roughness in the polishing surface abuts against the chamfered surface corresponding to the initial stage, and the relative rough grinding is performed. Since the relative rough grinding increases the advancement speed of the polishing, the chamfered surface forming time is shortened, and at the start of the relative rough grinding, the boundary portion is finely ground to perform the above-described "uniformity", so This may lead to the occurrence of defects or cracks, or the like, and the smooth coarse grinding is started smoothly. In the final stage, the rotary polishing tool is further moved in a straight line, whereby the outer peripheral portion having the small roughness in the polishing surface is abutted against the opposite thick Grinding the chamfered surface for fine grinding. Thereby, the defect or crack or the like which is generated on the chamfered surface from the rear end in the moving direction of the polishing surface due to the vibration of the rotary polishing tool is suppressed, and the relative thickness is suppressed. Grind to remove the tiny grinding powder or glass powder remaining on the chamfered surface. In this way, with the relative linear movement of the single rotary polishing tool, a series of grinding processes including fine grinding (uniform), relative rough grinding, and fine grinding are sequentially performed on the boundary portion of the glass substrate, thereby suppressing defects or cracks. Since the formation of the chamfered surface is performed in a short time, the simplification of the apparatus and the good quality around the chamfered surface are ensured, and the productivity can be greatly improved. Further, when either or both of the rotary polishing tool and the glass substrate are linearly movable, in the case of a large-sized glass substrate having a length in the longitudinal direction of the boundary portion of the glass substrate of 1000 mm or more, it is advantageous to use the glass substrate. In a state of being fixed to a work table or the like, the rotary polishing tool is moved along the longitudinal direction of the boundary portion of the glass substrate; conversely, in the case of a small glass substrate, it is advantageous to fix the rotary polishing tool and to provide the glass substrate. Moves linearly across the abrasive surface. Further, it is preferable that the rotary polishing tool is pressed against the boundary portion of the glass substrate in a state where the rotary polishing tool is elastically supported by an elastic body such as a spring, whereby the surface of the chamfered surface can be made The traits became better.

進而，為解決上述技術性課題而發明的方法的發明是一種玻璃基板的製造方法，製造於上述的端面研磨處理後形成倒角面而成的玻璃基板，其特徵在於：對玻璃基板的端面實施粗磨處理後再實施精磨處理，然後，於玻璃基板 的表面及背面中的至少一個面與上述端面之間的邊界部上，使用具有較上述精磨處理更細的粒度的研磨工具來實施指定的研磨處理，藉此形成上述倒角面。Further, the invention of the method for solving the above-mentioned technical problems is a method for producing a glass substrate, which is produced by forming a chamfered surface after the end surface polishing treatment, and is characterized in that the end surface of the glass substrate is applied to the end surface of the glass substrate. After the rough grinding treatment, the fine grinding treatment is carried out, and then, on the glass substrate A predetermined grinding process is performed on the boundary portion between at least one of the front surface and the back surface and the end surface by using a grinding tool having a finer grain size than the above-described refining treatment, thereby forming the chamfered surface.

根據上述方法，藉由粗磨與精磨，可高效地且短時間地將玻璃基板的端面研磨成例如剖面大致圓弧狀等，並且，作為此後的研磨，並不是進而利用更細的粒度的研磨工具來將該玻璃基板的端面研磨成相同形狀，而是利用更細的粒度的研磨工具，於該邊界部上形成倒角面。因此，可使端面、倒角面、以及表背面的三種面性狀為最佳，而高效地提高端面強度。而且，較好的是，將進行端面的粗磨處理的研磨工具、進行端面的精磨處理的研磨工具、以及進行指定研磨處理的研磨工具配設於同一路徑上，各研磨工具可一邊連續相對地直線移動一邊進行各研磨處理，與分別進行各處理的情形相比，可大幅縮短處理時間而謀求生產率的提高。進而，較好的是，於使用彈簧等彈性體來彈性支撐著進行指定研磨處理的研磨工具的狀態下，使上述的進行指定研磨處理的研磨工具壓接於上述玻璃基板的邊界部，藉此可使倒角面的面性狀變得較佳。According to the above method, by rough grinding and fine grinding, the end surface of the glass substrate can be polished to a substantially circular arc shape, for example, in a highly efficient manner, and the subsequent polishing is not further performed by using a finer particle size. The grinding tool grinds the end surface of the glass substrate into the same shape, and a chamfered surface is formed on the boundary portion by using a grinding tool having a finer particle size. Therefore, the three surface properties of the end surface, the chamfered surface, and the front and back surfaces can be optimized, and the end surface strength can be efficiently improved. Further, it is preferable that the polishing tool that performs the rough grinding treatment of the end surface, the polishing tool that performs the finishing treatment of the end surface, and the polishing tool that performs the specified polishing treatment are disposed on the same path, and each of the polishing tools can be continuously opposed. Each of the polishing processes is performed while moving linearly, and the processing time can be significantly shortened to improve the productivity as compared with the case where each process is performed. Furthermore, it is preferable that the polishing tool that performs the predetermined polishing process is pressed against the boundary portion of the glass substrate in a state in which the polishing tool that performs the predetermined polishing process is elastically supported by an elastic body such as a spring. The surface properties of the chamfered surface can be improved.

如上所述，根據本發明，在玻璃基板的表面及背面中的至少一個面與端面之間所存在的邊界部上形成倒角面，並使用適當的參數將該倒角面的面性狀規定為最佳值，因此，即便於因玻璃基板的彎曲或不當的溫度分佈而導致該倒角面上產生拉伸應力時，導致玻璃基板破裂或缺損的應 力集中將難以發生，從而使破損的發生概率劇減，並且玻璃微粒難以殘存及滯留，可謀求製品的品質提高。As described above, according to the present invention, a chamfered surface is formed on a boundary portion existing between at least one of the front surface and the back surface of the glass substrate, and the surface property of the chamfered surface is defined as an appropriate parameter. The optimum value, therefore, even if tensile stress is generated on the chamfered surface due to bending or improper temperature distribution of the glass substrate, the glass substrate is broken or defective. The concentration of force is hard to occur, so that the probability of occurrence of breakage is drastically reduced, and it is difficult for glass particles to remain and remain, and the quality of the product can be improved.

為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.

以下，參照隨附圖式對本發明的實施形態進行說明。另外，於以下的實施形態中，將以LCD用為代表的FPD用玻璃基板作為對象。Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, in the following embodiments, a glass substrate for FPD typified by an LCD is targeted.

圖1是將本實施形態的玻璃基板1的主要部分放大後的縱剖面圖。另外，該圖1中，僅對玻璃基板1的表面2a側部分的形態進行圖示，背面側部分亦成為夾持板厚方向中心線X而大致對稱的形態。如該圖1所示，該玻璃基板1包括平面狀的表面2a、縱剖面形成凸狀的圓弧形狀的端面3、以及形成於表面2a與端面3之間的平面狀的倒角面4。換言之，玻璃基板1中，存在於表面2a及背面的外周端彼此間的端面3、與表面2a以及背面分別經由倒角面4而連接。另外，該玻璃基板1並未實施強化處理(熱強化處理等)，但實施該處理亦無妨。Fig. 1 is an enlarged longitudinal sectional view showing a main part of a glass substrate 1 of the present embodiment. In addition, in FIG. 1, only the form of the surface 2a side part of the glass substrate 1 is shown, and the back side part is also the shape which is the thing of the center line X of the thickness direction, and is substantially symmetrical. As shown in FIG. 1, the glass substrate 1 includes a planar surface 2a, an end surface 3 having a circular arc-shaped longitudinal section, and a planar chamfered surface 4 formed between the surface 2a and the end surface 3. In other words, in the glass substrate 1, the end surface 3 existing between the outer peripheral ends of the front surface 2a and the back surface is connected to the front surface 2a and the back surface via the chamfered surface 4, respectively. Further, the glass substrate 1 is not subjected to a strengthening treatment (heat strengthening treatment or the like), but it is also possible to carry out the treatment.

該玻璃基板1的端面3是本實施形態中實施了粗磨處理後再實施精磨處理而成的研磨面，並且表面2a是成形面即未研磨面，且倒角面4是端面3的精磨處理後再實施指定研磨處理而成的指定研磨面。The end surface 3 of the glass substrate 1 is a polishing surface which is subjected to a rough grinding treatment and then subjected to a finish grinding treatment in the present embodiment, and the surface 2a is an unpolished surface which is a molding surface, and the chamfered surface 4 is an end surface 3 After the grinding treatment, the specified polishing surface obtained by the specified grinding treatment is applied.

使該玻璃基板1的倒角面4的微觀不平度的十點高度Rz2 小於端面3的微觀不平度的十點高度Rz1 ，且使倒角面 4的粗糙度曲線要素的平均長度RSm2 大於端面3的粗糙度曲線要素的平均長度RSm1 。另外，表面2a為鏡面，因此該表面2a的微觀不平度的十點高度小於倒角面4的微觀不平度的十點高度Rz2 ，且該表面2a的粗糙度曲線要素的平均長度大於倒角面4的粗糙度曲線要素的平均長度RSm2 。於此情形時，倒角面4的微觀不平度的十點高度Rz2 小於等於1.5μm，並且該倒角面4的微觀不平度的十點高度Rz2 與端面3的研磨面的微觀不平度的十點高度Rz1 之比，即，Rz1 /Rz2 大於等於1.5且小於等於10.0。又，倒角面4的粗糙度曲線要素的平均長度RSm2 大於等於100μm，並且該倒角面4的粗糙度曲線要素的平均長度RSm2 與端面3的粗糙度曲線要素的平均長度RSm1 之比，即RSm1 /RSm2 大於等於0.1且小於等於0.7。The ten-point height Rz 2 of the microscopic unevenness of the chamfered surface 4 of the glass substrate 1 is smaller than the ten-point height Rz 1 of the microscopic unevenness of the end face 3, and the average length RSm 2 of the roughness curve elements of the chamfered surface 4 is made. The average length RSm 1 of the roughness curve elements larger than the end face 3. In addition, the surface 2a is a mirror surface, so the ten-point height of the microscopic unevenness of the surface 2a is smaller than the ten-point height Rz 2 of the microscopic unevenness of the chamfered surface 4, and the average length of the roughness curve element of the surface 2a is larger than the chamfering The average length RSm 2 of the roughness curve elements of the face 4. In this case, the ten-point height Rz 2 of the microscopic unevenness of the chamfered surface 4 is less than or equal to 1.5 μm, and the ten-point height Rz 2 of the microscopic unevenness of the chamfered surface 4 and the microscopic unevenness of the polished surface of the end face 3 The ratio of the ten point height Rz 1 , that is, Rz 1 /Rz 2 is greater than or equal to 1.5 and less than or equal to 10.0. Further, the average length RSm 2 of the roughness curve elements of the chamfered surface 4 is 100 μm or more, and the average length RSm 2 of the roughness curve elements of the chamfered surface 4 and the average length RSm 1 of the roughness curve elements of the end face 3 are The ratio, that is, RSm 1 /RSm 2 is greater than or equal to 0.1 and less than or equal to 0.7.

又，使該玻璃基板1的倒角面4的突出谷部深度Rvk小於等於0.95(較好的是小於等於0.20)。另外，由於表面2a為鏡面，因此該表面2a的突出谷部深度Rvk小於倒角面4的突出谷部深度Rvk。Moreover, the protruding valley depth Rvk of the chamfered surface 4 of the glass substrate 1 is made 0.95 or less (preferably 0.20 or less). Further, since the surface 2a is a mirror surface, the protruding valley depth Rvk of the surface 2a is smaller than the protruding valley depth Rvk of the chamfered surface 4.

進而，使該玻璃基板1的倒角面4的粗糙度曲線的均方根斜率R△q小於等於0.10(較好的是小於等於0.05)。另外，由於表面2a為鏡面，因此該表面2a的粗糙度曲線的均方根斜率R△q小於倒角面4的粗糙度曲線的均方根斜率R△q。Further, the root mean square slope RΔq of the roughness curve of the chamfered surface 4 of the glass substrate 1 is 0.10 or less (preferably 0.05 or less). Further, since the surface 2a is a mirror surface, the root mean square slope RΔq of the roughness curve of the surface 2a is smaller than the root mean square slope RΔq of the roughness curve of the chamfered surface 4.

又，使該玻璃基板1的倒角面4的最大谷深Rv小於等於2.0μm(較好的是小於等於1.5μm)。另外，由於 表面2a為鏡面，因此該表面2a的最大谷深Rv小於倒角面4的最大谷深Rv。Moreover, the maximum valley depth Rv of the chamfered surface 4 of the glass substrate 1 is made 2.0 μm or less (preferably 1.5 μm or less). In addition, due to The surface 2a is a mirror surface, so the maximum valley depth Rv of the surface 2a is smaller than the maximum valley depth Rv of the chamfered surface 4.

另一方面，於圖1所示的剖面(與端面3的長度方向正交、且與表面2a及背面正交的剖面)中，倒角面4的朝向表面2a側的切線A與表面2a所成的角度α大於等於10°且小於等於30°(於本實施形態中為18°)，並且雖然未圖示，但背面側的倒角面的朝向背面側的切線與背面所成的角度亦大於等於10°且小於等於30°(本實施形態中為18°)。On the other hand, in the cross section shown in Fig. 1 (the cross section orthogonal to the longitudinal direction of the end surface 3 and orthogonal to the front surface 2a and the back surface), the tangent line A and the surface 2a of the chamfered surface 4 toward the surface 2a side are The angle α formed is 10° or more and 30° or less (18° in the present embodiment), and although not shown, the angle formed by the tangent to the back side of the chamfered surface on the back side and the back surface is also It is 10 or more and 30 or less (18 in this embodiment).

於此情形時，倒角面4是藉由指定研磨處理而將僅進行了端面3的研磨處理的狀態下的、形成表面2a與端面3的波形的根源的邊界部z的周邊(圖1中以虛線表示的部位的周邊)去除而成的面，該去除部是自根源的邊界部z朝向端面3側的寬度W1為70μm、且自根源的邊界部z朝向表面2a側的寬度W2為30μm的區域。另外，該根源的邊界部z的切線B與表面2a所成的角度γ於本實施形態中為25°。In this case, the chamfered surface 4 is a periphery of the boundary portion z that forms the root of the waveform of the surface 2a and the end surface 3 in a state where only the end surface 3 is subjected to the polishing process by the specified polishing process (in FIG. 1 The surface of the removed portion is the width W1 from the boundary portion z of the root source toward the end surface 3 side of 70 μm, and the width W2 from the boundary portion z of the root source toward the surface 2a side is 30 μm. Area. Further, the angle γ between the tangent line B of the boundary portion z of the root source and the surface 2a is 25° in the present embodiment.

進而，該玻璃基板1中設定為：該玻璃基板1的板厚T小於等於1.1mm且大於等於0.05mm，並且倒角面4的寬度W(與倒角面4的長度方向(沿邊的方向)正交、且與表面2a及背面平行的方向的尺寸)與板厚T之比，即，W/T大於等於0.07且小於等於0.30。Further, in the glass substrate 1, the thickness T of the glass substrate 1 is set to be 1.1 mm or more and 0.05 mm or more, and the width W of the chamfered surface 4 (the length direction of the chamfered surface 4 (direction along the side)) The ratio of the dimension orthogonal to the surface 2a and the back surface to the thickness T, that is, W/T is 0.07 or more and 0.30 or less.

具備如上所述的構成的玻璃基板1是以如下方式進行製造。The glass substrate 1 having the above configuration is manufactured as follows.

圖2例示有：大致矩形的玻璃基板1，該玻璃基板1是藉由以下方式而獲得，即，於利用下拉(downdraw)法或浮式(float)法等而成形後的玻璃原板的表面的四個部位，以獲得描畫著大致矩形的刻設線的區域的方式而劃出劃線(scribe)，且以該劃痕為起點而折割玻璃原板；以及研磨工具5，對該玻璃基板1的經折割的端面部3a進行研磨處理。該玻璃基板1的端面部3a首先藉由第1研磨工具而進行粗磨處理，其次藉由第2研磨工具而進行精磨處理。如圖2所示，第1研磨工具為粗磨用旋轉磨輪(rotary grinding wheel)(金屬結合劑鑽石磨輪)，該粗磨用旋轉磨輪是於前視下成凹狀的大致圓弧形狀的外周面上安裝由金屬結合劑(metal bond)保持的鑽石研磨粒層而成。而且，於將該第1研磨工具抵壓於玻璃基板1的端面部3a的狀態下，使第1研磨工具沿玻璃基板1的端面部3a的長度方向(沿邊方向)相對移動，藉此進行粗磨處理。第2研磨工具形成與第1研磨工具相同的形狀，且是以聚胺基甲酸酯樹脂(polyurethane resin)等而於該第2研磨工具的外周面結合碳化矽等較細的研磨粒而成的精磨用旋轉磨輪(樹脂結合劑磨輪(resin bond wheel))。該第2研磨工具在抵壓於玻璃基板1的經粗磨處理的端面部的狀態下，與上述同樣地相對移動，藉此進行精磨處理，其結果如圖3所示，於玻璃基板1上形成剖面大致圓弧狀的端面3b，該端面3b的微觀不平度的十點高度Rzjis約為1~3μm，突出谷部深度Rvk約為1.0~1.5，粗糙度曲線的均方根斜率R△q 約為0.12~0.20，最大谷深Rv約為3.0~5.0μm。另外，玻璃基板1的端面3b的形成並不限定於如上所示經過二階段的研磨處理，亦可藉由經過三階段或三階段以上的研磨處理而進行。FIG. 2 illustrates a substantially rectangular glass substrate 1 obtained by, for example, a surface of a glass original plate formed by a downdraw method or a float method. Four portions are scribed in such a manner as to draw a region of the substantially rectangular engraved line, and the original glass plate is folded with the scratch as a starting point; and the polishing tool 5 is attached to the glass substrate 1 The cut end face portion 3a is subjected to a grinding process. The end surface portion 3a of the glass substrate 1 is first subjected to rough grinding treatment by a first polishing tool, and secondly, fine grinding treatment is performed by a second polishing tool. As shown in Fig. 2, the first polishing tool is a rotary grinding wheel (metal bond diamond grinding wheel) for rough grinding, and the rough grinding wheel is a substantially arc-shaped outer circumference which is concave in a front view. A diamond abrasive grain layer held by a metal bond is mounted on the surface. In the state in which the first polishing tool is pressed against the end surface portion 3a of the glass substrate 1, the first polishing tool is relatively moved in the longitudinal direction (in the side direction) of the end surface portion 3a of the glass substrate 1, thereby performing coarse Grinding treatment. The second polishing tool is formed into the same shape as the first polishing tool, and is formed by bonding fine abrasive grains such as niobium carbide to the outer peripheral surface of the second polishing tool by a polyurethane resin or the like. A refining grinding wheel (resin bond wheel) for fine grinding. The second polishing tool is moved in the same manner as described above while being pressed against the rough-treated end surface portion of the glass substrate 1, thereby performing a finish grinding process. As a result, as shown in FIG. 3, the glass substrate 1 is used. The end surface 3b having a substantially arc-shaped cross section is formed, the ten-point height Rzjis of the microscopic unevenness of the end surface 3b is about 1 to 3 μm, the protruding valley depth Rvk is about 1.0 to 1.5, and the root mean square slope RΔ of the roughness curve. q It is about 0.12~0.20, and the maximum valley depth Rv is about 3.0~5.0μm. Further, the formation of the end surface 3b of the glass substrate 1 is not limited to the two-stage polishing treatment as described above, and may be performed by a three-stage or three-stage polishing treatment.

如上所述，當於玻璃基板1上形成著剖面大致圓弧狀的端面3b時，使用第3研磨工具6，藉由實施指定研磨處理而於該端面3b與表面2a的邊界部z、以及端面3b與背面2b的邊界部z上形成倒角面4。如圖4所示，該第3研磨工具6包括與旋轉軸6a正交的平面狀的研磨面(研磨面)6b，該研磨面6b是由較上述第2研磨工具更細的研磨粒而形成。另外，玻璃基板1於端面3b的周邊向前突出的狀態下，安裝於作業台(平板)7的上表面。As described above, when the end surface 3b having a substantially arc-shaped cross section is formed on the glass substrate 1, the third polishing tool 6 is used to perform the specified polishing process on the boundary portion z between the end surface 3b and the surface 2a, and the end surface. A chamfered surface 4 is formed on the boundary portion z between the 3b and the back surface 2b. As shown in FIG. 4, the third polishing tool 6 includes a planar polishing surface (polishing surface) 6b orthogonal to the rotating shaft 6a, and the polishing surface 6b is formed by polishing finer particles than the second polishing tool. . Further, the glass substrate 1 is attached to the upper surface of the work table (plate) 7 in a state where the periphery of the end surface 3b protrudes forward.

而且，一邊使兩個第3研磨工具6的研磨面6b同時抵壓於玻璃基板1的表面2a側的邊界部z與背面2b側的邊界部z並旋轉，一邊使第3研磨工具6沿玻璃基板1的邊界部z的長度方向相對移動，藉此進行指定研磨處理。藉此，將玻璃基板1的邊界部z上所殘存的多數的玻璃碎屑等去除。於此情形時，設定為：兩個第3研磨工具6的研磨面6b、與玻璃基板1的表面2a及背面2b所成的角度分別大於等於10°且小於等於30°(本實施形態中為18°)。較好的是，如圖5所示，第3研磨工具6中，中央部為圓形的凹部，以包圍該凹部的方式而排列粗糙度相對大的內周側研磨部6ba、以及粗糙度相對小的外周側研磨部6bb，藉由該兩個研磨部6ba、6bb，玻璃基板1的邊界部z將受 到指定研磨處理。另外，兩個第3研磨工具6是相對於相對移動方向而隔離配置著。In addition, while the polishing surface 6b of the two third polishing tools 6 is simultaneously pressed against the boundary portion z on the surface 2a side of the glass substrate 1 and the boundary portion z on the back surface 2b side, the third polishing tool 6 is placed along the glass. The longitudinal direction of the boundary portion z of the substrate 1 is relatively moved, thereby performing a specified polishing process. Thereby, most of the glass scraps and the like remaining on the boundary portion z of the glass substrate 1 are removed. In this case, the angle between the polishing surface 6b of the two third polishing tools 6 and the surface 2a and the back surface 2b of the glass substrate 1 is set to be 10 or more and 30 or less, respectively (in the present embodiment, 18°). As shown in FIG. 5, in the third polishing tool 6, the central portion is a circular concave portion, and the inner peripheral side polishing portion 6ba having a relatively large roughness is arranged so as to surround the concave portion, and the roughness is relatively The small outer peripheral side polishing portion 6bb, by the two polishing portions 6ba and 6bb, the boundary portion z of the glass substrate 1 is subject to Go to the specified grinding process. Further, the two third polishing tools 6 are disposed to be opposed to each other with respect to the relative movement direction.

而且，結束該指定研磨處理，藉此如圖6(以及圖1)所示，於玻璃基板1的表面2a與端面3之間，形成完全去除邊界部z而成的倒角面4。藉由形成該倒角面4，即便因玻璃基板1的彎曲或不當的溫度分佈所引起的拉伸應力作用於該倒角面4上，該倒角面4上亦不會產生應力集中，端面3(包括倒角面4)的破壞強度上升，並且可避免玻璃微粒或玻璃碎屑等殘存並滯留的問題。Then, the designated polishing process is completed, and as shown in FIG. 6 (and FIG. 1), a chamfered surface 4 in which the boundary portion z is completely removed is formed between the surface 2a of the glass substrate 1 and the end surface 3. By forming the chamfered surface 4, even if tensile stress due to bending or improper temperature distribution of the glass substrate 1 acts on the chamfered surface 4, stress concentration does not occur on the chamfered surface 4, and the end surface is not formed. The breaking strength of 3 (including the chamfered surface 4) rises, and the problem of residual and retention of glass particles or glass chips can be avoided.

另外，於上述實施形態中，於端面3自表面2a及背面2b的外周端向外側彎曲成凸狀而成的玻璃基板1中應用本發明，但對於端面3形成平坦面(較好的是與表背面成直角的平坦面)的玻璃基板，亦可同樣地應用本發明。Further, in the above-described embodiment, the present invention is applied to the glass substrate 1 in which the end surface 3 is curved outward from the outer peripheral end of the front surface 2a and the back surface 2b, but a flat surface is formed on the end surface 3 (preferably, The present invention can also be applied similarly to a glass substrate having a flat surface having a right-angled back surface.

又，於上述實施形態中，在形成著如下端面的玻璃基板中應用本發明，該端面是形成自表面及背面的外周端至板厚中央部而向外側逐漸突出的彎曲面，但對於形成著如下端面的玻璃基板亦可同樣地應用本發明，該端面是於表面及背面的外周端彼此間形成與上述面成直角的平坦面。Further, in the above-described embodiment, the present invention is applied to a glass substrate on which an end surface is formed so as to form a curved surface which gradually protrudes from the outer peripheral end of the front surface and the back surface to the central portion of the thickness, but is formed to be formed. The present invention can also be applied to a glass substrate having an end surface formed with a flat surface at right angles to the surface between the outer peripheral ends of the front surface and the back surface.

進而，於上述實施形態中，在藉由折割來分割玻璃原板而成的玻璃基板中應用本發明，但對於如雷射切斷般使用雷射或熱應力分割玻璃原板而成的玻璃基板亦可同樣地應用本發明。於此情形時，不對形成平坦面的端面進行研磨處理，而是僅對邊界部進行研磨處理，藉此形成倒角面。Further, in the above-described embodiment, the present invention is applied to a glass substrate obtained by dividing a glass original plate by folding, but a glass substrate obtained by dividing a glass original plate by laser or thermal stress as in laser cutting is also used. The present invention is equally applicable. In this case, the end surface on which the flat surface is formed is not subjected to the rubbing treatment, but only the boundary portion is subjected to the rubbing treatment, thereby forming a chamfered surface.

又，於上述實施形態中，於FPD用的玻璃基板中應用 本發明，但例如有機EL照明用或太陽電池用的玻璃基板中同樣亦可應用本發明。Moreover, in the above embodiment, the application is applied to a glass substrate for FPD. In the present invention, for example, the present invention can also be applied to a glass substrate for organic EL illumination or solar cells.

[實施例1][Example 1]

本發明者等為確認與上述圖1所例示的玻璃基板的倒角面的微觀不平度的十點高度Rzjis、以及粗糙度曲線要素的平均長度RSm相關的效果，而如下所示般進行本發明的實施例1a~1e與比較例1a~1c的對比。該等實施例以及比較例，均使用藉由溢流下拉(overflow downdraw)法而成形的日本電氣硝子股份公司製造的OA-10來作為玻璃原板。The present inventors have confirmed the effects of the ten-point height Rzjis of the microscopic unevenness of the chamfered surface of the glass substrate illustrated in FIG. 1 and the average length RSm of the roughness curve elements, and the present invention is as follows. Comparison of Examples 1a to 1e with Comparative Examples 1a to 1c. In the examples and the comparative examples, OA-10 manufactured by Nippon Electric Glass Co., Ltd., which was formed by an overflow downdraw method, was used as the glass original plate.

關於下述表1所示的本發明的實施例1a~1c以及比較例1a、1b，沿劃痕折割而分割板厚為700μm的玻璃原板，藉此獲得短邊尺寸為1500mm且長邊尺寸為1800mm的玻璃基板，將該玻璃基板作為所使用的試樣。又，同樣地，關於實施例1d、1e以及比較例1c，沿劃痕折割而分割板厚為500μm的玻璃原板，藉此獲得短邊尺寸為550mm且長邊尺寸為670mm的玻璃基板，將該玻璃基板作為所使用的試樣。而且，對於該等玻璃基板的端面部，按照以下所示的順序來進行用以形成剖面成凸狀的圓弧形狀的端面的研磨處理、以及用以在該研磨後的端面與表面及背面的各邊界部上形成倒角面的指定研磨處理。With respect to Examples 1a to 1c and Comparative Examples 1a and 1b of the present invention shown in Table 1 below, a glass original plate having a thickness of 700 μm was cut along a scratch, thereby obtaining a short side dimension of 1500 mm and a long side dimension. The glass substrate of 1800 mm was used as the sample to be used. Further, in the same manner, in Examples 1d and 1e and Comparative Example 1c, a glass substrate having a thickness of 500 μm was divided by scratching, thereby obtaining a glass substrate having a short side dimension of 550 mm and a long side dimension of 670 mm. This glass substrate was used as a sample to be used. Further, the end surface portions of the glass substrates are subjected to a polishing process for forming an end surface having a circular arc shape having a convex shape in the following order, and an end surface, a surface and a back surface after the polishing. A specified polishing process is performed on each of the boundary portions to form a chamfered surface.

關於本發明的實施例1a~1c以及比較例1a、1b，首先，於將玻璃基板載置並吸附固定於壓盤上的狀態下，使形成圖2所示的形態的作為第1研磨工具的粗磨用旋轉磨 石(研磨粒#400)的外周面壓接於玻璃基板的端面部，並且以表1所示的磨削速度而直線移動，藉此來形成剖面大致圓弧形狀的粗糙面即端面部。其次，同樣地，使形成圖2所示的形態的作為第2研磨工具的精磨用旋轉磨石(研磨粒#1000)的外周面壓接於玻璃基板的粗磨後的端面部，並且以表1所示的磨削速度而直線移動，藉此形成被精磨成剖面大致圓弧形狀而成的端面。又，關於本發明的實施例1d、1e以及比較例1c，首先一邊使玻璃基板以表2所示的磨削速度而直線移動，一邊使固定配置於固定位置上、且形成圖2所示的形態的作為第1研磨工具的粗磨用旋轉磨石(研磨粒#400)的外周面壓接於玻璃基板的端面部，藉此形成剖面大致圓弧形狀的粗糙面即端面部。其次，同樣地，一邊使玻璃基板以表2所示的磨削速度直線移動，一邊使固定設置於固定位置、且形成圖2所示的形態的作為第2研磨工具的精磨用旋轉磨石(研磨粒#1000)的外周面壓接於玻璃基板的粗磨後的端面部，藉此形成被精磨成剖面大致圓弧形狀而成的端面。In the first to the first embodiments of the present invention, the first embodiment of the present invention, in the state in which the glass substrate is placed on the pressure plate, and the first polishing tool is formed in the form shown in FIG. Rotary mill for rough grinding The outer peripheral surface of the stone (abrasive grain #400) is pressed against the end surface portion of the glass substrate, and linearly moved at the grinding speed shown in Table 1, thereby forming an end surface portion which is a rough surface having a substantially circular arc shape. In the same manner, the outer peripheral surface of the grinding grindstone (abrasive grain #1000) as the second polishing tool in the form shown in Fig. 2 is pressure-bonded to the rough-finished end surface portion of the glass substrate, and The grinding speed shown in Table 1 was linearly moved, thereby forming an end surface which was refined to have a substantially circular arc shape in cross section. Further, in the first and second examples of the present invention, the glass substrate was linearly moved at the grinding speed shown in Table 2, and was fixedly placed at a fixed position to form the same as shown in FIG. The outer peripheral surface of the rough grinding rotary grindstone (abrasive grain #400) as the first polishing tool is pressed against the end surface portion of the glass substrate, thereby forming an end surface portion which is a rough surface having a substantially circular arc shape. In the same manner, the glass substrate is linearly moved at the grinding speed shown in Table 2, and the rotating grindstone for fine grinding as the second polishing tool is formed in a fixed position and formed in the form shown in Fig. 2 . The outer peripheral surface of (abrasive grain #1000) is pressure-bonded to the rough-finished end surface portion of the glass substrate, thereby forming an end surface that is roughly ground into a substantially circular arc shape.

然後，利用第3研磨工具來對玻璃基板的端面與表面及背面的各邊界部進行指定研磨處理。作為第3研磨工具，使用在圓形的基盤上固定著平板狀的鑽石研磨板的研磨工具，該平板狀的鑽石研磨板是使鑽石研磨粒分散於樹脂材料中而成。另外，上述研磨粒的大小以及表1、2所示的研磨粒的大小是依據JIS R6001：1998。Then, the third polishing tool is used to specify the polishing process on the end faces of the glass substrate and the boundary portions on the front and back surfaces. As the third polishing tool, a polishing tool in which a flat diamond polishing plate is fixed to a circular base plate, in which the diamond abrasive grains are dispersed in a resin material, is used. Further, the size of the above-mentioned abrasive grains and the size of the abrasive grains shown in Tables 1 and 2 are based on JIS R6001:1998.

於執行指定研磨處理時，以玻璃基板的表面及背面分 別與倒角面的切線所成的角度(圖1的角度α：背面側亦同樣)成18°~22°的方式，而適當地調整第3研磨工具的角度，並且對第3研磨工具與玻璃基板的接觸面供給磨削液(磨削水)。而且，為獲得預期的倒角尺寸，而使第3研磨工具(研磨板)一邊以周速度2000m/min旋轉，一邊以如表1、2所示的不同磨削速度而直線移動，從而遍及除角部附近以外的玻璃基板的整個外周而進行指定研磨處理。如上所述，獲得實施例1a~1c以及實施例1d、1e的玻璃基板。When performing the specified grinding process, the surface and the back surface of the glass substrate are divided. The angle formed by the tangent to the chamfered surface (the angle α in Fig. 1 : the same on the back side) is 18° to 22°, and the angle of the third grinding tool is appropriately adjusted, and the third grinding tool is The grinding liquid (grinding water) is supplied to the contact surface of the glass substrate. Further, in order to obtain a desired chamfer size, the third polishing tool (polishing plate) is linearly moved at different peripheral speeds as shown in Tables 1 and 2 while rotating at a peripheral speed of 2000 m/min. The specified polishing treatment is performed on the entire outer circumference of the glass substrate other than the corner portion. As described above, the glass substrates of Examples 1a to 1c and Examples 1d and 1e were obtained.

於實施例1a、1b、1d中，第3研磨工具的研磨粒為#3000，於實施例1c、1e中，第3研磨工具的研磨粒為#2000，相對於此，於比較例1a~1c中，並不進行利用第3研磨工具的指定研磨處理，而僅僅是對玻璃基板的端面部進行利用第1研磨工具的粗磨處理、以及利用第2研磨工具的精磨處理。又，於所有實施例中，以倒角尺寸(倒角寬度)處於60~200μm的範圍內的方式，而選定第3研磨工具的移動速度或磨削條件，在作為試樣的玻璃基板的所有端面的與表面及背面的邊界部上形成大致平坦的倒角面。In Examples 1a, 1b, and 1d, the abrasive grains of the third polishing tool were #3000, and in Examples 1c and 1e, the abrasive grains of the third polishing tool were #2000, whereas in Comparative Examples 1a to 1c. In the meantime, the specified polishing process using the third polishing tool is not performed, and only the end surface portion of the glass substrate is subjected to the rough grinding treatment using the first polishing tool and the fine grinding treatment using the second polishing tool. Further, in all of the examples, the moving speed or the grinding condition of the third grinding tool was selected in such a manner that the chamfering size (chamfer width) was in the range of 60 to 200 μm, and all of the glass substrates as the samples were selected. A substantially flat chamfered surface is formed on the boundary portion between the end surface and the front surface and the back surface.

另外，於以上的實施例中，使用如下方法：於玻璃基板的端面部上形成大致圓弧狀的研磨面後，使用第3研磨工具，於端面的與表面及背面的邊界部上形成倒角面；但亦可為如下：於將玻璃基板吸附固定於壓盤上的狀態下，於同一移動軌道(rail)上設置著第1研磨工具、第2研磨 工具、以及第3研磨工具，並沿該移動軌道而同時使三種研磨工具移動，藉此連續地完成研磨動作。若如此，則以更短時間完成所有研磨處理，因此可顯著提高加工效率，且於各邊的尺寸大於等於1000mm的大型尺寸的玻璃基板的研磨處理步驟中，操作將變得容易。又，對於尺寸較小的玻璃基板，亦可使用如下方法：將三種研磨工具設置成與玻璃基板的邊平行，一邊使用搬送帶等搬送機構來搬送玻璃基板，一邊連續進行各研磨處理。Further, in the above embodiments, a method of forming a substantially arc-shaped polished surface on the end surface portion of the glass substrate and then forming a chamfer on the boundary portion between the end surface and the front surface and the back surface using the third polishing tool is used. However, the first polishing tool and the second polishing may be disposed on the same moving rail in a state where the glass substrate is adsorbed and fixed to the pressure plate. The tool and the third grinding tool move the three grinding tools simultaneously along the moving rail, thereby continuously completing the grinding operation. In this case, all the polishing treatments are completed in a shorter time, so that the processing efficiency can be remarkably improved, and the operation becomes easy in the polishing processing step of the large-sized glass substrate having a size of 1000 mm or more on each side. In addition, in the case of the glass substrate having a small size, the three types of polishing tools may be arranged so as to be parallel to the side of the glass substrate, and the glass substrate may be conveyed by using a conveying mechanism such as a conveyor belt, and each polishing process may be continuously performed.

另一方面，關於實施例1a~1e以及比較例1a~1c的各玻璃基板，使用東京精密公司製造的Surfcom590A，以測定長度5.0mm來進行粗糙度測定，並依據JIS B0601：2001而計算出玻璃基板的端面以及倒角面的微觀不平度的十點高度Rzjis(Rz1 、Rz2 )、以及粗糙度曲線要素的平均長度RSm(RSm1 、RSm2 )值的各粗糙度參數。關於該微觀不平度的十點高度Rz1 、Rz2 以及粗糙度曲線要素的平均長度RSm1 、RSm2 ，是於同一條件下對10個玻璃基板實施倒角處理，並且對各玻璃基板分別測定10次，並計算出平均值，藉此來進行評價。將結果示於下述表1、2。On the other hand, in each of the glass substrates of Examples 1a to 1e and Comparative Examples 1a to 1c, the Surfcom 590 manufactured by Tokyo Seimitsu Co., Ltd. was used, and the roughness was measured by measuring a length of 5.0 mm, and the glass was calculated in accordance with JIS B0601:2001. Each roughness parameter of the ten-point height Rzjis (Rz 1 , Rz 2 ) of the microscopic unevenness of the end surface of the substrate and the chamfered surface, and the average length RSm (RSm 1 , RSm 2 ) of the roughness curve element. The ten-point heights Rz 1 and Rz 2 of the microscopic unevenness and the average lengths RSm 1 and RSm 2 of the roughness curve elements are subjected to chamfering treatment on ten glass substrates under the same conditions, and each glass substrate is measured. The evaluation was performed 10 times and the average value was calculated. The results are shown in Tables 1 and 2 below.

關於研磨後的玻璃基板的強度，藉由使用Orientec公司製造的Tensilon RTA-250的三點彎曲測試法來測定破壞強度。彎曲測試的樣品是使用將玻璃基板的端面部的邊的中央部切出為80×15mm的尺寸的測試片，進而，使端面部的頂點(剖面大致圓弧的頂點)朝上而負載著負荷來測定該測試片在破損時的負荷，利用下述數1所示的式子進 行計算，藉此來測定破壞應力(端面強度)σ。Regarding the strength of the polished glass substrate, the breaking strength was measured by a three-point bending test using Tensilon RTA-250 manufactured by Orientec. The sample for the bending test was a test piece in which the center portion of the side surface of the end surface of the glass substrate was cut to a size of 80 × 15 mm, and the apex of the end surface (the apex of the substantially circular arc of the cross section) was placed upward and loaded. To measure the load of the test piece at the time of damage, use the formula shown in the following number 1 to The row is calculated to determine the breaking stress (end face strength) σ.

另外，上述數1所示的式子中，P為破壞負荷，L為支點間距離，B為樣品寬度，h為玻璃厚度。Further, in the formula shown in the above number 1, P is the breaking load, L is the distance between the fulcrums, B is the sample width, and h is the glass thickness.

下述表1、2中記載有玻璃基板的破壞應力，該等破壞應力是表示針對各實施例以及各比較例的各玻璃基板的破壞應力而測定10個玻璃基板所得的值中的最小值(強度最小)。進而，為了對附著或殘存於玻璃基板的表面上的玻璃微粒的附著特性進行評價，而於對各實施例以及各比較例的各玻璃基板進行清洗及乾燥後，對玻璃基板表面所殘存的每個玻璃片的表面的微粒值進行測定。微粒值是使用Hitachi High-Technologies公司製造的微粒測定裝置GI-7200來進行1μm及1μm以上的微粒數的測定，將數值換算為每1平方米的個數。將結果示於下述表1、2。 而且，關於各實施例以及各比較例的各玻璃基板，利用顯微鏡來對端面的與表面及背面的邊界部分上的因碎屑所引起的階差的殘存狀態進行放大觀察。將結果示於下述表1、2。於此情形時，在表1、2中，『○』表示未確認到碎屑階差的存在，『△』表示觀察到殘存有微小的階差，『×』表示觀察到殘存有較大的階差。In the following Tables 1 and 2, the breaking stress of the glass substrate is shown, and the breaking stress is the minimum value of the values of the ten glass substrates measured for the breaking stress of each glass substrate of each of the examples and the comparative examples ( Minimum strength). Further, in order to evaluate the adhesion characteristics of the glass fine particles adhering to or remaining on the surface of the glass substrate, each glass substrate of each of the examples and the comparative examples was washed and dried, and then the remaining surface of the glass substrate was left. The particle values of the surface of the glass sheets were measured. The particle value is measured by using the particle measuring device GI-7200 manufactured by Hitachi High-Technologies Co., Ltd., and the number of particles of 1 μm and 1 μm or more is measured, and the numerical value is converted into the number per square meter. The results are shown in Tables 1 and 2 below. Further, in each of the glass substrates of the respective examples and the comparative examples, the remaining state of the step due to the debris on the boundary portion between the end surface and the front surface and the back surface was magnified by a microscope. The results are shown in Tables 1 and 2 below. In this case, in Tables 1 and 2, "○" indicates that the presence of the chip step is not confirmed, "△" indicates that a small step is observed, and "×" indicates that a large step remains. difference.

另外，於下述表3表示：在倒角面的指定研磨處理時的、玻璃基板的表面與鄰接於該表面的倒角面的朝向表面側的切線所成的角度α(參照圖1)、及玻璃基板的背面與鄰接於該背面的倒角面的朝向背面側的切線所成的角度β的實測值、以及倒角面的寬度W的測定值。In addition, Table 3 below shows an angle α between the surface of the glass substrate and the tangent to the surface side of the chamfered surface adjacent to the surface at the time of the specified polishing process on the chamfered surface (see FIG. 1), The measured value of the angle β between the back surface of the glass substrate and the tangent to the back surface side of the chamfered surface of the back surface, and the measured value of the width W of the chamfered surface.

根據上述表1、2而可確認：本發明的實施例1a~1e中任一者均於玻璃基板的端面的表面及背面的邊界部上形成著如下的倒角面，該倒角面的微觀不平度的十點高度較小，理所當然地接近鏡面，且具有充分的寬度；與如比較例1a~1c的情形般未形成倒角面的玻璃基板相比，實施例1a~1e中任一者均具有明顯較高的破壞強度(即，端面強度超過160MPa)。又，於各實施例的倒角面中，並未確認到因碎屑所引起的研磨邊界部的階差或微小裂痕，進而確認到於玻璃微粒的附著等的所有情形下顯示良好或極好的 結果。According to the above-mentioned Tables 1 and 2, it was confirmed that any of the examples 1a to 1e of the present invention has the following chamfered surface formed on the boundary portion between the front surface and the back surface of the end surface of the glass substrate, and the microscopic surface of the chamfered surface The ten-point height of the unevenness is small, and is naturally close to the mirror surface and has a sufficient width; compared with the glass substrate which does not form a chamfered surface as in the case of Comparative Examples 1a to 1c, any of the embodiments 1a to 1e Both have significantly higher fracture strength (ie, end face strength exceeds 160 MPa). Further, in the chamfered surface of each of the examples, the step or the micro crack of the polishing boundary portion due to the chipping was not confirmed, and it was confirmed that the glass fine particles adhered well or in all cases. result.

因此，本發明的各實施例的玻璃基板成為難以引起後步驟中的破損、且強度極高的玻璃基板，並且因端面所引起的玻璃微粒的產生極少，即便在如液晶顯示器或電漿顯示器、進而如有機EL等般用於高解析度顯示的顯示器時，亦可有效地抑制在玻璃基板上形成顯示元件或裝置(device)時所發生的斷線不良等。Therefore, the glass substrate of each embodiment of the present invention becomes a glass substrate which is less likely to cause breakage in the subsequent step and has extremely high strength, and the generation of glass fine particles due to the end face is extremely small, even in a liquid crystal display or a plasma display, for example. Further, when it is used for a display having a high-resolution display such as an organic EL, it is possible to effectively suppress a disconnection failure or the like which occurs when a display element or a device is formed on a glass substrate.

而且，於本發明的各實施例的情形時，即便使磨削速度自100mm/min增大至400mm/min，亦只要選擇合適的研磨工具的研磨板並設定磨削條件，則可高效地獲得同樣的倒角面，可實現各步驟的高效化。Further, in the case of the respective embodiments of the present invention, even if the grinding speed is increased from 100 mm/min to 400 mm/min, it is possible to efficiently obtain the grinding plate of a suitable grinding tool and set the grinding conditions. The same chamfered surface can achieve high efficiency in each step.

另一方面，於各比較例中，不僅研磨工具的移動速度為200mm/sec或400mm/sec的情形時，即便研磨工具的移動速度低速至100mm/sec，端面部的最低破壞強度亦比較低，有可能會因搬送機構對強度較低的端面的接觸、或向強度較低的端面的熱應力集中而引起破損。又，任一比較例均為：由於微粒值比較高、且邊界部的碎屑階差較大，因此例如於清洗時以及乾燥時、或搬送時以及捆包時等的步驟中，玻璃微粒自邊界部的碎屑部剝離並附著於玻璃基板上，從而有可能於形成顯示元件或裝置時引起斷線不良。因此，可確認：本發明的各實施例的玻璃基板與上述比較例的玻璃基板相比，於破壞強度與玻璃微粒的任一方面均極其優異。On the other hand, in each comparative example, when the moving speed of the grinding tool is 200 mm/sec or 400 mm/sec, even if the moving speed of the grinding tool is low to 100 mm/sec, the minimum breaking strength of the end face is relatively low. There is a possibility that damage may occur due to the contact of the conveying mechanism to the end face having a low strength or the concentration of thermal stress to the end face having a low strength. Further, in any of the comparative examples, since the particle value is relatively high and the chip size difference at the boundary portion is large, for example, in the steps of washing, drying, or transportation, and packing, the glass particles are self-contained. The chip portion at the boundary portion is peeled off and adhered to the glass substrate, which may cause a disconnection failure when the display element or device is formed. Therefore, it was confirmed that the glass substrate of each of the examples of the present invention is extremely excellent in both the breaking strength and the glass fine particles as compared with the glass substrate of the above comparative example.

[實施例2][Embodiment 2]

本發明者等為確認與上述圖1所例示的玻璃基板的倒角面的突出谷部深度Rvk有關的效果，而如下所示進行本發明的實施例2a~2d與比較例的對比。關於該等實施例以及比較例，均使用利用溢流下拉法而成形的日本電氣硝子股份公司製造的OA-10(未實施強化處理)來作為玻璃原板。In order to confirm the effect on the protruding valley depth Rvk of the chamfered surface of the glass substrate illustrated in Fig. 1, the inventors of the present invention performed comparisons of the examples 2a to 2d of the present invention with the comparative examples as follows. In the examples and the comparative examples, OA-10 (not reinforced) manufactured by Nippon Electric Glass Co., Ltd., which was formed by the overflow down-draw method, was used as the glass original plate.

關於下述表4所示的本發明的實施例2a~2d以及比較例，於板厚為700μm的玻璃原板上劃出劃線來進行折割而分割，藉此獲得短邊尺寸為1500mm且長邊尺寸為1800mm的玻璃基板，將該玻璃基板作為所使用的試樣。具體的玻璃原板的分割方法為如下：利用鑽石晶片於玻璃原板的表面上劃出劃線，使彎曲力矩(bending moment)作用於玻璃原板以便於該劃線上產生拉伸應力，藉此進行折割而分割。另外，作為其他分割方法，亦可為如下：利用鑽石磨輪等，於玻璃原板的一部分上形成初始傷痕(初始裂痕)，對該部位照射雷射而進行局部加熱之後，噴附冷卻劑(refrigerant)而使該部位急劇冷卻，藉此使初始裂痕有進展，由此切斷玻璃原板。其中，於利用該種雷射切斷時，玻璃基板的端面成為平坦面，因此成為與實施例以及比較例的玻璃基板不同的端面形狀。In Examples 2a to 2d and Comparative Examples of the present invention shown in Table 4 below, a scribe line was drawn on a glass original plate having a thickness of 700 μm, and was cut and divided to obtain a short side dimension of 1500 mm and long. A glass substrate having an edge size of 1800 mm was used as the sample to be used. The specific method for dividing the original glass plate is as follows: a diamond wafer is used to draw a scribe line on the surface of the glass original plate, and a bending moment is applied to the original glass plate to generate tensile stress on the scribe line, thereby performing folding. And split. Further, as another division method, an initial flaw (initial crack) may be formed on a part of the original glass plate by using a diamond grinding wheel or the like, and the portion may be irradiated with a laser to be locally heated, and then sprayed with a coolant (refrigerant). The portion is rapidly cooled, whereby the initial crack is progressed, thereby cutting the original glass sheet. In the case of cutting with such a laser, the end surface of the glass substrate is a flat surface, and therefore has an end surface shape different from that of the glass substrates of the examples and the comparative examples.

使外周面由圓筒面(於該實施例以及比較例中為外周面凹陷為大致圓弧狀)構成的圓柱狀的磨石，一邊在旋轉軸排列成與玻璃基板的表面的法線方向平行的狀態下旋轉，一邊抵壓於以上述方式而獲得的玻璃基板的端面，並 且沿該端面的長度方向相對地直線移動，藉此進行該端面的研磨處理。於此情形時，作為對玻璃基板的端面進行研磨的磨石，預先準備著研磨粒或黏合劑(binder)的不同的多種磨石，自最初研磨粒較粗且黏合劑較硬的磨石逐漸變更為研磨粒較細且黏合劑較軟的磨石。The cylindrical grindstone which is formed by the cylindrical surface (the outer peripheral surface is recessed into a substantially arc shape in this embodiment and the comparative example) is arranged in the rotation axis in parallel with the normal direction of the surface of the glass substrate. Rotating in a state of being pressed against the end surface of the glass substrate obtained in the above manner, and Further, the end surface is polished in a straight line by relatively linearly moving along the longitudinal direction of the end surface. In this case, as the grindstone for polishing the end surface of the glass substrate, different kinds of grindstones of abrasive grains or binders are prepared in advance, and the grindstone which is coarser in the initial grinding grain and harder in the binder is gradually formed. Change to a grindstone with a fine abrasive grain and a soft binder.

其次，對於結束端面的研磨處理的玻璃基板，藉由研磨而於端面與表面(背面)的邊界部上形成大致平面狀的倒角面。於此情形時，必要的條件是：倒角面的研磨中所使用的磨石與上述端面的研磨用的磨石相比，研磨粒較細且黏合劑較軟。倒角面的研磨用的磨石抵壓於倒角面的面可為圓筒面或圓錐面，或亦可為大致平面狀的圓形端面或圓環端面，進而亦可為於布帶上固定著研磨粒的研磨布的表面。而且，該等磨石(或研磨布)相對於玻璃基板的倒角面的長度方向而相對地直線移動。Next, a substantially planar chamfered surface is formed on the boundary portion between the end surface and the surface (back surface) by polishing the glass substrate that has finished the end surface polishing treatment. In this case, the necessary condition is that the grindstone used in the grinding of the chamfered surface is finer than the grinding stone for the end face, and the binder is soft. The surface of the chamfered surface for grinding the grinding stone against the chamfered surface may be a cylindrical surface or a conical surface, or may be a substantially planar circular end surface or a circular end surface, and may also be on the tape. The surface of the abrasive cloth to which the abrasive grains are fixed. Further, the grindstones (or polishing cloths) relatively linearly move with respect to the longitudinal direction of the chamfered surface of the glass substrate.

若對下述表4所示的實施例2a進行具體說明，則首先於將分割後的玻璃基板載置並吸附固定於壓盤上的狀態下，使形成圖2所示的形態的作為第1研磨工具的粗磨用旋轉磨石(利用金屬結合劑而固定著#400研磨粒)的外周面一邊抵壓於玻璃基板的端面部一邊直線移動，藉此形成剖面大致圓弧形狀的粗糙面即端面部。其次，同樣地，使形成圖2所示的形態的作為第2研磨工具的精磨用旋轉磨石(利用樹脂結合而固定#1000研磨粒)的外周面，一邊抵壓於玻璃基板的粗磨後的端面部一邊直線移動，藉此而形成被精磨成剖面大致圓弧形狀的端面。然後，利用第3 研磨工具來對玻璃基板的端面與表面及背面的各邊界部進行指定研磨處理。作為第3研磨工具，使用一種在圓形的基盤上固定著平板狀的鑽石研磨板的研磨工具，該平板狀的鑽石研磨板是使鑽石研磨粒(#3000研磨粒)分散於樹脂材料中而成。於執行指定研磨處理時，以玻璃基板的表面及背面分別與倒角面的切線所成的角度(圖1的角度α：背面側亦同樣)成18°~22°的方式，而適當地調整第3研磨工具的角度，並且對第3研磨工具與玻璃基板的接觸面供給磨削液(磨削水)。而且，為獲得預期的倒角面的寬度尺寸，一邊使第3研磨工具(研磨板)以周速度2000m/min旋轉，一邊遍及除玻璃基板在俯視觀察下的角部附近以外的整個外周而進行指定研磨處理。如上所述，獲得實施例2a的玻璃基板。另外，上述的研磨粒的大小是依據JIS R6001：1998。於此情形時，關於實施例2b、2c、2d、以及比較例，第1、第2、第3研磨工具的研磨粒分別與實施例2a不同。When the embodiment 2a shown in the following Table 4 is specifically described, first, the form shown in FIG. 2 is formed as the first state in which the divided glass substrate is placed and adsorbed and fixed on the platen. The outer peripheral surface of the rough grinding rotary grinding stone (the #400 abrasive grain is fixed by a metal bond) is linearly moved while being pressed against the end surface portion of the glass substrate, thereby forming a rough surface having a substantially circular arc shape. End face. In the same manner, the outer peripheral surface of the refining grindstone (the resin-bonded and fixed #1000 abrasive grains) which is the second polishing tool in the form shown in Fig. 2 is pressed against the rough grinding of the glass substrate. The rear end surface is linearly moved, thereby forming an end surface that is refined to have a substantially circular arc shape in cross section. Then, use the third The polishing tool performs a predetermined polishing process on the end faces of the glass substrate and the respective boundary portions on the front and back surfaces. As the third polishing tool, a polishing tool in which a flat diamond polishing plate is fixed to a circular base plate in which diamond abrasive grains (#3000 abrasive grains) are dispersed in a resin material is used. to make. When the specified polishing process is performed, the angle between the front surface and the back surface of the glass substrate and the tangent to the chamfered surface (the angle α in FIG. 1 : the back side is also the same) is 18° to 22°, and is appropriately adjusted. The angle of the third polishing tool is supplied to the contact surface of the third polishing tool and the glass substrate to supply a grinding fluid (grinding water). In addition, in order to obtain the desired width dimension of the chamfered surface, the third polishing tool (polishing plate) is rotated over the entire circumference of the glass substrate in the vicinity of the corner portion in plan view while rotating at a peripheral speed of 2000 m/min. Specify the grinding process. As described above, the glass substrate of Example 2a was obtained. Further, the size of the above abrasive grains is based on JIS R6001:1998. In this case, in the examples 2b, 2c, 2d, and the comparative examples, the abrasive grains of the first, second, and third polishing tools were different from those of the second embodiment.

下述表4所示的玻璃基板的倒角面的突出谷部深度Rvk、以及端面的突出谷部深度Rvk是使用東京精密公司製造的Surfcom590A，遍及測定長度5.0mm來進行粗糙度測定，並依據JIS B0601：2001而計算出各Rvk的值。該兩種突出谷部深度Rvk均為各自於同一條件下在10個玻璃基板上施予倒角面，並且對該等進行10次測定，並計算出平均值，藉此來進行評價。進而，與此同時，求出玻璃基板的端面的最大剖面高度Pt、以及倒角面的最大剖面高 度Pt。此外，求出玻璃基板的端面強度，來作為因玻璃基板的彎曲或熱應力而引起破損的容易程度的標準。關於玻璃基板的端面強度，藉由使用Orientec公司製造的Tensilon RTA-250的三點彎曲測試法來測定破壞強度，並將該破壞強度作為端面強度。彎曲測試的樣品是使用將玻璃基板的端面部的邊的中央部切出成80×15mm的尺寸的測試片，進而，使端面部的頂點(剖面大致圓弧的頂點)朝上而負載著負荷來測定破損時的負荷，利用已述的由數1所示的式子進行計算，藉此來測定破壞應力(端面強度)σ。The protruding valley depth Rvk of the chamfered surface of the glass substrate shown in the following Table 4 and the protruding valley depth Rvk of the end surface were measured using the Surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd., and the roughness was measured over the measurement length of 5.0 mm. JIS B0601:2001 calculates the value of each Rvk. The two kinds of protruding valley depths Rvk were each subjected to a chamfered surface on 10 glass substrates under the same conditions, and the evaluation was performed 10 times, and an average value was calculated. Further, at the same time, the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum profile height of the chamfered surface are obtained. Degree Pt. Further, the end surface strength of the glass substrate is determined as a standard for the ease of damage due to bending or thermal stress of the glass substrate. Regarding the end face strength of the glass substrate, the breaking strength was measured by a three-point bending test using Tensilon RTA-250 manufactured by Orientec, and the breaking strength was taken as the end face strength. The sample for the bending test was a test piece in which the center portion of the side surface of the end surface of the glass substrate was cut into a size of 80 × 15 mm, and the apex of the end surface (the apex of the substantially circular arc of the cross section) was placed upward and loaded. The load at the time of breakage was measured, and the fracture stress (end face strength) σ was measured by calculation using the equation shown by the number 1.

於下述表4表示：以上述方式而求出的倒角面的突出谷部深度Rvk、端面強度、倒角面的最大剖面高度Pt、以及端面的最大剖面高度Pt。Table 4 below shows the protruding valley depth Rvk of the chamfered surface obtained in the above manner, the end surface strength, the maximum sectional height Pt of the chamfered surface, and the maximum sectional height Pt of the end surface.

上述表4中，端面的最大剖面高度Pt以及倒角面的最大剖面高度Pt相當於JIS B0601：1982中的最大高度Rmax，因此可認為該端面的最大剖面高度Pt以及倒角面的最大剖面高度Pt相當於已述專利文獻1、2的表面最大 凹凸。而且，比較例的玻璃基板中，倒角面的最大高度Pt為5.57μm且小於等於7μm(0.007mm)，並且端面的最大高度Pt為7.44μm且小於等於40μm(0.04mm)，因此滿足已述專利文獻1、2中所記載的數值範圍的條件。然而，本發明者等確認：該比較例的玻璃基板於FPD、有機EL、以及太陽電池等的製造步驟中會頻繁地引起破損。此意味著：比較例的玻璃基板的端面強度不充分。考慮到此情況，可瞭解端面強度需要160MPa。而且，本發明的實施例2a~2d中，可瞭解倒角面的突出谷部深度Rvk小於等於0.95，藉此使端面強度超過160MPa而具有充分的端面強度。因此，可確認：規定玻璃基板的倒角面的突出谷部深度Rvk小於等於0.95，將在以下方面存在較大意義：抑制因玻璃基板的彎曲或不當的溫度分佈所引起的拉伸應力的產生，並儘可能地降低應力集中，防止玻璃基板的破損。In the above Table 4, the maximum sectional height Pt of the end surface and the maximum sectional height Pt of the chamfered surface correspond to the maximum height Rmax in JIS B0601:1982, so the maximum sectional height Pt of the end surface and the maximum sectional height of the chamfered surface can be considered. Pt is equivalent to the surface of the above-mentioned Patent Documents 1, 2 Bump. Further, in the glass substrate of the comparative example, the maximum height Pt of the chamfered surface is 5.57 μm and 7 μm or less (0.007 mm), and the maximum height Pt of the end surface is 7.44 μm and 40 μm (0.04 mm) or less. The conditions of the numerical range described in Patent Documents 1 and 2. However, the inventors of the present invention confirmed that the glass substrate of the comparative example frequently causes breakage in the production steps of FPD, organic EL, and solar cells. This means that the end surface strength of the glass substrate of the comparative example is insufficient. With this in mind, it can be understood that the end face strength needs to be 160 MPa. Further, in the second to second embodiments of the present invention, it is understood that the protruding valley depth Rvk of the chamfered surface is 0.95 or less, whereby the end surface strength exceeds 160 MPa and the end surface strength is sufficient. Therefore, it has been confirmed that the protruding valley depth Rvk of the chamfered surface of the glass substrate is not less than 0.95, which is significant in that the generation of tensile stress due to bending of the glass substrate or improper temperature distribution is suppressed. And reduce stress concentration as much as possible to prevent breakage of the glass substrate.

又，對玻璃原板進行雷射切斷來分割而成的玻璃基板中，形成平坦面的端面的面性狀與表背面同樣地接近鏡面，因此可推測：即便於該玻璃基板的該邊界部上與上述同樣地形成倒角面時，只要該倒角面的突出谷部深度Rvk小於等於0.95，則可獲得與上述表4所示的較佳結果同等或更佳的結果。Further, in the glass substrate in which the glass original plate is subjected to laser cutting and division, the surface property of the end surface on which the flat surface is formed is similar to that of the front and back surfaces, and it is estimated that even at the boundary portion of the glass substrate When the chamfered surface is formed in the same manner as described above, as long as the protruding valley depth Rvk of the chamfered surface is 0.95 or less, a result equivalent to or better than the preferable results shown in Table 4 above can be obtained.

[實施例3][Example 3]

本發明者等為確認與上述圖1所例示的玻璃基板的倒角面的粗糙度曲線的均方根斜率R△q有關的效果，而如 下所示進行本發明的實施例3a~3d與比較例的對比。關於該等實施例以及比較例，均使用利用溢流下拉法而成形的日本電氣硝子股份公司製造的OA-10(未實施強化處理)來作為玻璃原板。The inventors of the present invention have confirmed the effects relating to the root mean square slope RΔq of the roughness curve of the chamfered surface of the glass substrate illustrated in Fig. 1 described above. Comparison of Examples 3a to 3d of the present invention with Comparative Examples was carried out as shown below. In the examples and the comparative examples, OA-10 (not reinforced) manufactured by Nippon Electric Glass Co., Ltd., which was formed by the overflow down-draw method, was used as the glass original plate.

關於下述表5所示的本發明的實施例3a~3d以及比較例，於板厚為700μm的玻璃原板上劃出劃線來進行折割而分割，藉此獲得短邊尺寸為1500mm且長邊尺寸為1800mm的玻璃基板，將該玻璃基板作為所使用的試樣。具體的玻璃原板的分割方法為如下：利用鑽石晶片於玻璃原板的表面上劃出劃線，使彎曲力矩作用於玻璃原板以使該劃線上產生拉伸應力，藉此來進行折割而分割。另外，作為其他分割方法，亦可為如下：利用鑽石磨輪等，於玻璃原板的一部分上形成初始傷痕(初始裂痕)，對該部位照射雷射而進行局部加熱之後，噴附冷卻劑而使該部位急劇冷卻，藉此使初始裂痕進展，由此切斷玻璃原板。其中，於利用該種雷射切斷時，玻璃基板的端面成為平坦面，因此成為與實施例以及比較例的玻璃基板不同的端面形狀。In Examples 3a to 3d and Comparative Examples of the present invention shown in Table 5 below, the glass sheets having a thickness of 700 μm were scribed and cut and divided, thereby obtaining a short side dimension of 1500 mm and a long length. A glass substrate having an edge size of 1800 mm was used as the sample to be used. The method for dividing the specific glass original plate is as follows: a diamond wafer is used to draw a scribe line on the surface of the original glass plate, and a bending moment acts on the glass original plate to cause tensile stress on the scribe line, thereby dividing and dividing. Further, as another division method, an initial flaw (initial crack) may be formed on a part of the original glass plate by using a diamond grinding wheel or the like, and the portion may be irradiated with a laser to be locally heated, and then the coolant may be sprayed. The portion is rapidly cooled, whereby the initial crack progresses, thereby cutting the original glass plate. In the case of cutting with such a laser, the end surface of the glass substrate is a flat surface, and therefore has an end surface shape different from that of the glass substrates of the examples and the comparative examples.

使外周面由圓筒面(於該實施例以及比較例中為外周面凹陷為大致圓弧狀)構成的圓柱狀的磨石，一邊在旋轉軸排列成與玻璃基板的表面的法線方向平行的狀態下旋轉，一邊抵壓於如上所述而獲得的玻璃基板的端面，並且沿該端面的長度方向相對地直線移動，藉此來進行該端面的研磨處理。於此情形時，作為對玻璃基板的端面來進行研磨的磨石，預先準備著研磨粒或黏合劑的不同的多種磨 石、自最初研磨粒較粗且黏合劑較硬的磨石逐漸變更為研磨粒較細且黏合劑較軟的磨石。The cylindrical grindstone which is formed by the cylindrical surface (the outer peripheral surface is recessed into a substantially arc shape in this embodiment and the comparative example) is arranged in the rotation axis in parallel with the normal direction of the surface of the glass substrate. In the state of being rotated, the end surface of the glass substrate obtained as described above is pressed and linearly moved in the longitudinal direction of the end surface, whereby the end surface is polished. In this case, as a grindstone that grinds the end surface of the glass substrate, various kinds of different grinds of the abrasive grains or the binder are prepared in advance. Stone, the grindstone from the initial coarser grain and harder binder is gradually changed to a grindstone with finer abrasive grains and softer binder.

其次，對於結束端面的研磨處理的玻璃基板，藉由研磨而在端面與表面(背面)的邊界部上形成大致平面狀的倒角面。於此情形時，必要的條件是：倒角面的研磨中所使用的磨石與上述端面的研磨用的磨石相比，研磨粒較細且黏合劑較軟。倒角面的研磨用的磨石抵壓於倒角面的面可為圓筒面或圓錐面，或亦可為大致平面狀的圓形端面或圓環端面，進而亦可為在布帶上固定著研磨粒的研磨布的表面。而且，該等磨石(或研磨布)相對於玻璃基板的倒角面的長度方向而相對地直線移動。Next, a substantially planar chamfered surface is formed on the boundary portion between the end surface and the surface (back surface) by polishing on the glass substrate that has finished the end surface polishing treatment. In this case, the necessary condition is that the grindstone used in the grinding of the chamfered surface is finer than the grinding stone for the end face, and the binder is soft. The surface of the chamfered surface for grinding the grinding stone against the chamfered surface may be a cylindrical surface or a conical surface, or may be a substantially planar circular end surface or a circular end surface, and may also be on the tape. The surface of the abrasive cloth to which the abrasive grains are fixed. Further, the grindstones (or polishing cloths) relatively linearly move with respect to the longitudinal direction of the chamfered surface of the glass substrate.

若對下述表5所示的實施例3a進行具體說明，則首先於將分割後的玻璃基板載置並吸附固定於壓盤上的狀態下，使形成圖2所示的形態的作為第1研磨工具的粗磨用旋轉磨石(利用金屬結合劑而固定著#400研磨粒)的外周面，一邊抵壓於玻璃基板的端面部一邊直線移動，藉此而形成剖面大致圓弧形狀的粗糙面即端面部。其次，同樣地，使形成圖2所示的形態的作為第2研磨工具的精磨用旋轉磨石(利用樹脂結合而固定#1000研磨粒)的外周面，一邊抵壓於玻璃基板的粗磨後的端面部一邊直線移動，藉此而形成被精磨成剖面大致圓弧形狀而成的端面。然後，利用第3研磨工具來對玻璃基板的端面與表面及背面的各邊界部進行指定研磨處理。作為第3研磨工具，使用一種在圓形的基盤上固定著平板狀的鑽石研磨板的研磨工具，該 平板狀的鑽石研磨板是使鑽石研磨粒(#3000研磨粒)分散於樹脂材料中而成。於執行指定研磨處理時，以玻璃基板的表面及背面分別與倒角面的切線所成的角度(圖1的角度α：背面側亦同樣)成18°~22°的方式，而適當地調整第3研磨工具的角度，並且對第3研磨工具與玻璃基板的接觸面供給磨削液(磨削水)。而且，為獲得預期的倒角面的寬度尺寸，而使第3研磨工具(研磨板)一邊以周速度2000m/min旋轉，一邊遍及除玻璃基板在俯視觀察下的角部附近以外的整個外周而進行指定研磨處理。如上所述而獲得實施例3a的玻璃基板。另外，上述的研磨粒的大小是依據JIS R6001：1998。於此情形時，關於實施例3b、3c、3d、以及比較例，第1、第2、第3研磨工具的研磨粒分別與實施例3a不同。When the embodiment 3a shown in the following Table 5 is specifically described, first, the form shown in FIG. 2 is formed as the first state in which the divided glass substrate is placed and adsorbed and fixed on the platen. The outer peripheral surface of the rough grinding grindstone (the #400 abrasive grain is fixed by a metal bond) of the grinding tool is linearly moved while being pressed against the end surface portion of the glass substrate, thereby forming a rough shape having a substantially circular arc shape. The face is the end face. In the same manner, the outer peripheral surface of the refining grindstone (the resin-bonded and fixed #1000 abrasive grains) which is the second polishing tool in the form shown in Fig. 2 is pressed against the rough grinding of the glass substrate. The rear end surface is linearly moved, thereby forming an end surface that is refined to have a substantially circular arc shape in cross section. Then, the third polishing tool is used to specify the polishing process on the end faces of the glass substrate and the boundary portions on the front and back surfaces. As the third grinding tool, an abrasive tool in which a flat diamond polishing plate is fixed to a circular base plate is used. The flat diamond polishing plate is obtained by dispersing diamond abrasive grains (#3000 abrasive grains) in a resin material. When the specified polishing process is performed, the angle between the front surface and the back surface of the glass substrate and the tangent to the chamfered surface (the angle α in FIG. 1 : the back side is also the same) is 18° to 22°, and is appropriately adjusted. The angle of the third polishing tool is supplied to the contact surface of the third polishing tool and the glass substrate to supply a grinding fluid (grinding water). Further, in order to obtain the desired width dimension of the chamfered surface, the third polishing tool (polishing plate) is rotated over the entire circumference of the glass substrate in the vicinity of the corner portion in plan view while rotating at a peripheral speed of 2000 m/min. Perform the specified grinding process. The glass substrate of Example 3a was obtained as described above. Further, the size of the above abrasive grains is based on JIS R6001:1998. In this case, in the examples 3b, 3c, 3d, and the comparative examples, the abrasive grains of the first, second, and third polishing tools were different from those of the third embodiment.

下述表5所示的玻璃基板的倒角面的粗糙度曲線的均方根斜率R△q、以及端面的粗糙度曲線的均方根斜率R△q是使用東京精密公司製造的Surfcom590A，遍及測定長度5.0mm來進行粗糙度測定，並依據JIS BO601：2001而計算出各R△q的值。該兩種均方根斜率R△q均為各自於同一條件下在10個玻璃基板上施予倒角面，並且對該等進行10次測定，並計算出平均值，藉此進行評價。進而，與此同時，求出玻璃基板的端面的最大剖面高度Pt、以及倒角面的最大剖面高度Pt。而且，求出玻璃基板的端面強度，來作為因玻璃基板的彎曲或熱應力而引起破損的容易程度的標準。關於玻璃基板的端面強度，是藉由使用 Orientec公司製造的Tensilon RTA-250的三點彎曲測試法來測定破壞強度，並將該破壞強度作為端面強度。彎曲測試的樣品使用將玻璃基板的端面部的邊的中央部切出成80×15mm的尺寸的測試片，進而，使端面部的頂點(剖面大致圓弧的頂點)朝上而負載著負荷來測定破損時的負荷，利用已述的由數1所示的式子進行計算，藉此來測定破壞應力(端面強度)σ。The root mean square slope RΔq of the roughness curve of the chamfered surface of the glass substrate shown in Table 5 below and the root mean square slope RΔq of the roughness curve of the end surface were made using the Surfcom 590A manufactured by Tokyo Precision Co., Ltd. The roughness was measured by measuring a length of 5.0 mm, and the value of each RΔq was calculated in accordance with JIS BO601:2001. The two root mean square slopes RΔq were each subjected to a chamfered surface on 10 glass substrates under the same conditions, and the measurement was performed 10 times, and an average value was calculated, thereby evaluating. Further, at the same time, the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height Pt of the chamfered surface were obtained. Further, the end surface strength of the glass substrate is determined as a standard for the ease of damage due to bending or thermal stress of the glass substrate. About the end face strength of the glass substrate, by using The three-point bending test of Tensilon RTA-250 manufactured by Orientec was used to determine the breaking strength, and the breaking strength was used as the end strength. The sample for the bending test was obtained by cutting a central portion of the side of the end surface portion of the glass substrate into a test piece having a size of 80 × 15 mm, and further, the apex of the end surface portion (the apex of the substantially circular arc of the cross section) was upwardly loaded and loaded. The load at the time of damage was measured, and the breaking stress (end surface strength) σ was measured by the calculation of the equation shown by the number 1.

於下述表5表示：以上述方式而求出的倒角面的均方根斜率R△q、端面強度、倒角面的最大剖面高度Pt、以及端面的最大剖面高度Pt。Table 5 below shows the root mean square slope RΔq of the chamfered surface obtained in the above manner, the end face strength, the maximum cross-sectional height Pt of the chamfered surface, and the maximum cross-sectional height Pt of the end surface.

上述表5中，端面的最大剖面高度Pt以及倒角面的最大剖面高度Pt相當於JIS B0601：1982中的最大高度Rmax，因此可認為該端面的最大剖面高度Pt以及倒角面的最大剖面高度Pt相當於已述專利文獻1、2的表面最大凹凸。而且，比較例的玻璃基板中，倒角面的最大高度Pt為5.57μm且小於等於7μm(0.007mm)，並且端面的 最大高度Pt為7.44μm且小於等於40μm(0.04mm)，因此滿足已述專利文獻1、2中所記載的數值範圍的條件。然而，本發明者等確認：該比較例的玻璃基板在FPD、有機EL、以及太陽電池等的製造步驟中會頻繁地引起破損。此意味著：比較例的玻璃基板的端面強度不充分。考慮到此情況，可瞭解端面強度需要160MPa。而且，本發明的實施例3a~3d中，可瞭解倒角面的均方根斜率R△q小於等於0.10，藉此，端面強度超過160MPa而具有充分的端面強度。因此，可確認：規定玻璃基板的倒角面的均方根斜率R△q小於等於0.10，將在以下方面存在較大意義：抑制對因玻璃基板的彎曲或不當的溫度分佈所引起的拉伸應力的產生，並儘可能地降低應力集中，防止玻璃基板的破損。In the above Table 5, the maximum sectional height Pt of the end surface and the maximum sectional height Pt of the chamfered surface correspond to the maximum height Rmax in JIS B0601:1982, so the maximum sectional height Pt of the end surface and the maximum sectional height of the chamfered surface can be considered. Pt corresponds to the surface maximum unevenness of Patent Documents 1 and 2. Further, in the glass substrate of the comparative example, the maximum height Pt of the chamfered surface was 5.57 μm and 7 μm (0.007 mm) or less, and the end surface was Since the maximum height Pt is 7.44 μm and 40 μm or less (0.04 mm), the conditions of the numerical ranges described in Patent Documents 1 and 2 are satisfied. However, the inventors of the present invention confirmed that the glass substrate of the comparative example frequently causes breakage in the production steps of FPD, organic EL, and solar cells. This means that the end surface strength of the glass substrate of the comparative example is insufficient. With this in mind, it can be understood that the end face strength needs to be 160 MPa. Further, in the embodiments 3a to 3d of the present invention, it is understood that the root mean square slope RΔq of the chamfered surface is 0.10 or less, whereby the end surface strength exceeds 160 MPa and the end surface strength is sufficient. Therefore, it has been confirmed that the root mean square slope RΔq of the chamfered surface of the glass substrate is required to be 0.10 or less, which is significant in that the stretching due to bending or improper temperature distribution of the glass substrate is suppressed. The generation of stress and the reduction of stress concentration as much as possible to prevent breakage of the glass substrate.

又，對玻璃原板進行雷射切斷來分割而成的玻璃基板中，形成平坦面的端面的面性狀與表背面同樣地接近鏡面，因此可推測：即便於該玻璃基板的該邊界部上與上述同樣地形成倒角面時，只要該倒角面的均方根斜率R△q小於等於0.10，則可獲得與上述表5所示的較佳結果同等或更佳的結果。Further, in the glass substrate in which the glass original plate is subjected to laser cutting and division, the surface property of the end surface on which the flat surface is formed is similar to that of the front and back surfaces, and it is estimated that even at the boundary portion of the glass substrate When the chamfered surface is formed in the same manner as described above, if the root mean square slope RΔq of the chamfered surface is 0.10 or less, a result equivalent to or better than the preferable results shown in the above Table 5 can be obtained.

[實施例4][Example 4]

本發明者等為確認與上述圖1所例示的玻璃基板的倒角面的最大谷深Rv相關的效果，而如下所示進行本發明的實施例4a~4d與比較例的對比。關於該等實施例以及比較例，均使用利用溢流下拉法而成形的日本電氣硝子股份 公司製造的OA-10(未實施強化處理)來作為玻璃原板。In order to confirm the effect related to the maximum valley depth Rv of the chamfered surface of the glass substrate illustrated in Fig. 1, the inventors of the present invention compared the examples 4a to 4d of the present invention with the comparative examples as follows. Regarding the examples and the comparative examples, the Nippon Electric Glass Co., Ltd. formed by the overflow down-draw method was used. The company's OA-10 (without strengthening treatment) was used as the original glass plate.

關於下述表6所示的本發明的實施例4a~4d以及比較例，於板厚為700μm的玻璃原板上劃出劃線來進行折割而分割，藉此而獲得短邊尺寸為1500mm且長邊尺寸為1800mm的玻璃基板，將該玻璃基板作為所使用的試樣。具體的玻璃原板的分割方法為如下：利用鑽石晶片於玻璃原板的表面上劃出劃線，使彎曲力矩作用於玻璃原板以使該劃線上產生拉伸應力，藉此而進行折割而分割。另外，作為其他分割方法，亦可為如下：利用鑽石磨輪等，於玻璃原板的一部分上形成初始傷痕(初始裂痕)，對該部位照射雷射而進行局部加熱之後，噴附冷卻劑而使該部位急劇冷卻，藉此使初始裂痕進展，由此切斷玻璃原板。其中，於利用該種雷射切斷時，玻璃基板的端面成為平坦面，因此成為與實施例以及比較例的玻璃基板不同的端面形狀。In Examples 4a to 4d and Comparative Examples of the present invention shown in Table 6 below, a scribe line was drawn on a glass plate having a thickness of 700 μm, and was cut and divided, whereby a short side dimension of 1500 mm was obtained. A glass substrate having a long side dimension of 1800 mm was used as the sample to be used. The specific method of dividing the original glass plate is as follows: a diamond wafer is used to draw a scribe line on the surface of the glass original plate, and a bending moment acts on the glass original plate to cause tensile stress on the scribe line, thereby dividing and dividing. Further, as another division method, an initial flaw (initial crack) may be formed on a part of the original glass plate by using a diamond grinding wheel or the like, and the portion may be irradiated with a laser to be locally heated, and then the coolant may be sprayed. The portion is rapidly cooled, whereby the initial crack progresses, thereby cutting the original glass plate. In the case of cutting with such a laser, the end surface of the glass substrate is a flat surface, and therefore has an end surface shape different from that of the glass substrates of the examples and the comparative examples.

使外周面由圓筒面(於該實施例以及比較例中為外周面凹陷為大致圓弧狀)構成的圓柱狀的磨石，一邊在旋轉軸排列成與玻璃基板的表面的法線方向平行的狀態下旋轉，一邊抵壓於以上述方式獲得的玻璃基板的端面，並且沿該端面的長度方向相對地直線移動，藉此進行該端面的研磨處理。於此情形時，作為對玻璃基板的端面進行研磨的磨石，預先準備著研磨粒或黏合劑的不同的多種磨石，自最初研磨粒較粗且黏合劑較硬的磨石逐漸變更為研磨粒較細且黏合劑較軟的磨石。The cylindrical grindstone which is formed by the cylindrical surface (the outer peripheral surface is recessed into a substantially arc shape in this embodiment and the comparative example) is arranged in the rotation axis in parallel with the normal direction of the surface of the glass substrate. In the state of being rotated, the end surface of the glass substrate obtained in the above manner is pressed and linearly moved in the longitudinal direction of the end surface, whereby the end surface is polished. In this case, as the grindstone for polishing the end surface of the glass substrate, a plurality of different grindstones of the abrasive grains or the binder are prepared in advance, and the grindstone which is coarser from the initial abrasive grains and harder than the binder is gradually changed to grind. A finer stone with a finer binder and a softer binder.

其次，對於結束端面的研磨處理的玻璃基板，藉由研 磨而於端面與表面(背面)的邊界部上形成大致平面狀的倒角面。於此情形時，必要的條件是：倒角面的研磨中所使用的磨石與上述端面的研磨用的磨石相比，研磨粒較細且黏合劑較軟。倒角面的研磨用的磨石抵壓於倒角面的面可為圓筒面或圓錐面，或亦可為大致平面狀的圓形端面或圓環端面，進而亦可為在布帶上固定著研磨粒的研磨布的表面。而且，該等磨石(或研磨布)相對於玻璃基板的倒角面的長度方向而相對地直線移動。Next, the glass substrate for finishing the end surface is processed by grinding A substantially planar chamfered surface is formed on the boundary portion between the end surface and the surface (back surface). In this case, the necessary condition is that the grindstone used in the grinding of the chamfered surface is finer than the grinding stone for the end face, and the binder is soft. The surface of the chamfered surface for grinding the grinding stone against the chamfered surface may be a cylindrical surface or a conical surface, or may be a substantially planar circular end surface or a circular end surface, and may also be on the tape. The surface of the abrasive cloth to which the abrasive grains are fixed. Further, the grindstones (or polishing cloths) relatively linearly move with respect to the longitudinal direction of the chamfered surface of the glass substrate.

若對下述表6所示的實施例4a進行具體說明，則首先於將分割後的玻璃基板載置並吸附固定於壓盤上的狀態下，使形成圖2所示的形態的作為第1研磨工具的粗磨用旋轉磨石(利用金屬結合劑而固定著#400研磨粒)的外周面，一邊抵壓於玻璃基板的端面部一邊直線移動，藉此形成剖面大致圓弧形狀的粗糙面即端面部。其次，同樣地，使形成圖2所示的形態的作為第2研磨工具的精磨用旋轉磨石(利用樹脂結合而固定#1000研磨粒)的外周面，一邊抵壓於玻璃基板的粗磨後的端面部一邊直線移動，藉此而形成被精磨成剖面大致圓弧形狀的端面。然後，利用第3研磨工具來對玻璃基板的端面與表面及背面的各邊界部進行指定研磨處理。作為第3研磨工具，使用一種在圓形的基盤上固定著平板狀的鑽石研磨板的研磨工具，該平板狀的鑽石研磨板是使鑽石研磨粒(#3000研磨粒)分散於樹脂材料中而成。於執行指定研磨處理時，以玻璃基板的表面及背面分別與倒角面的切線所成的角度(圖1的角度 α：背面側亦同樣)成18°~22°的方式，而適當地調整第3研磨工具的角度，並且對第3研磨工具與玻璃基板的接觸面供給磨削液(磨削水)。而且，為獲得預期的倒角面的寬度尺寸，而使第3研磨工具(研磨板)一邊以周速度2000m/min旋轉，一邊遍及除玻璃基板在俯視觀察下的角部附近以外的整個外周而進行指定研磨處理。如上所述而獲得實施例4a的玻璃基板。另外，上述的研磨粒的大小是依據JIS R6001：1998。於此情形時，關於實施例4b、4c、4d、以及比較例，第1、第2、第3研磨工具的研磨粒分別與實施例4a不同。When the embodiment 4a shown in the following Table 6 is specifically described, first, the form shown in FIG. 2 is formed as the first state in which the divided glass substrate is placed and adsorbed and fixed on the platen. The outer peripheral surface of the rough grinding grindstone (the #400 abrasive grain is fixed by a metal bond) of the grinding tool is linearly moved while being pressed against the end surface portion of the glass substrate, thereby forming a rough surface having a substantially circular arc shape. The end face. In the same manner, the outer peripheral surface of the refining grindstone (the resin-bonded and fixed #1000 abrasive grains) which is the second polishing tool in the form shown in Fig. 2 is pressed against the rough grinding of the glass substrate. The rear end surface is linearly moved, thereby forming an end surface that is refined to have a substantially circular arc shape in cross section. Then, the third polishing tool is used to specify the polishing process on the end faces of the glass substrate and the boundary portions on the front and back surfaces. As the third polishing tool, a polishing tool in which a flat diamond polishing plate is fixed to a circular base plate in which diamond abrasive grains (#3000 abrasive grains) are dispersed in a resin material is used. to make. When performing the specified polishing process, the angle between the surface and the back surface of the glass substrate and the tangent of the chamfered surface (the angle of FIG. 1) α: the same as the back side), the angle of the third polishing tool is appropriately adjusted, and the grinding liquid (grinding water) is supplied to the contact surface of the third polishing tool and the glass substrate. Further, in order to obtain the desired width dimension of the chamfered surface, the third polishing tool (polishing plate) is rotated over the entire circumference of the glass substrate in the vicinity of the corner portion in plan view while rotating at a peripheral speed of 2000 m/min. Perform the specified grinding process. The glass substrate of Example 4a was obtained as described above. Further, the size of the above abrasive grains is based on JIS R6001:1998. In this case, in the examples 4b, 4c, 4d, and the comparative examples, the abrasive grains of the first, second, and third polishing tools were different from those of the example 4a.

下述表6所示的玻璃基板的倒角面的最大谷深Rv是使用東京精密公司製造的Surfcom590A，遍及測定長度5.0mm來進行粗糙度測定，並依據JIS B0601：2001而計算出各Rv的值。該最大谷深Rv於同一條件下在10個玻璃基板上施予倒角面，並且對該等進行10次測定，並計算出平均值，藉此來進行評價。進而，與此同時，求出玻璃基板的端面的最大剖面高度Pt、以及倒角面的最大剖面高度Pt。而且，求出玻璃基板的端面強度，來作為因玻璃基板的彎曲或熱應力而引起破損的容易程度的標準。關於玻璃基板的端面強度，藉由使用Orientec社製造的Tensilon RTA-250的三點彎曲測試法來測定破壞強度，並將該破壞強度作為端面強度。彎曲測試的樣品是使用將玻璃基板的端面部的邊的中央部切出成80×15mm的尺寸的測試片，進而，使端面部的頂點(剖面大致圓弧的頂點)朝上而負 載著負荷來測定破損時的負荷，利用已述的由數1所示的式子進行計算，藉此來測定破壞應力(端面強度)σ。The maximum valley depth Rv of the chamfered surface of the glass substrate shown in the following Table 6 was measured using a Surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd., and the roughness was measured over a measurement length of 5.0 mm, and each Rv was calculated in accordance with JIS B0601:2001. value. The maximum valley depth Rv was subjected to a chamfered surface on 10 glass substrates under the same conditions, and the measurement was performed 10 times, and the average value was calculated. Further, at the same time, the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height Pt of the chamfered surface were obtained. Further, the end surface strength of the glass substrate is determined as a standard for the ease of damage due to bending or thermal stress of the glass substrate. Regarding the end face strength of the glass substrate, the breaking strength was measured by a three-point bending test using Tensilon RTA-250 manufactured by Orientec, and the breaking strength was taken as the end face strength. The sample for the bending test was a test piece in which the center portion of the side surface of the end surface of the glass substrate was cut into a size of 80 × 15 mm, and the apex of the end surface (the apex of the substantially circular arc of the cross section) was turned upward and negative. The load at the time of damage was measured by carrying a load, and the fracture stress (end surface strength) σ was measured by the calculation of the equation shown by the number 1 mentioned above.

於下述表6表示：以上述方式而求出的倒角面的最大谷深Rv、端面強度σ、倒角面的最大剖面高度Pt、以及端面的最大剖面高度Pt。Table 6 below shows the maximum valley depth Rv of the chamfered surface obtained in the above manner, the end surface strength σ, the maximum cross-sectional height Pt of the chamfered surface, and the maximum cross-sectional height Pt of the end surface.

上述表6中，端面的最大剖面高度Pt以及倒角面的最大剖面高度Pt相當於JIS B0601：1982中的最大高度Rmax，因此可認為該端面的最大剖面高度Pt以及倒角面的最大剖面高度Pt相當於已述專利文獻1、2的表面最大凹凸。而且，比較例的玻璃基板中，倒角面的最大高度Pt為5.57μm且小於等於7μm(0.007mm)，並且端面的最大高度Pt為7.44μm且小於等於40μm(0.04mm)，因此滿足已述專利文獻1、2中所記載的數值範圍的條件。然而，本發明者等確認：該比較例的玻璃基板在FPD、有機EL、以及太陽電池等的製造步驟中會頻繁地引起破損。此意味著：比較例的玻璃基板的端面強度不充分。考慮到 此情況，可瞭解端面強度需要160MPa。而且，本發明的實施例4a~4d中，可瞭解倒角面的最大谷深Rv小於等於2.0μm，藉此，端面強度超過160MPa而具有充分的端面強度。因此，可確認：規定玻璃基板的倒角面的最大谷深Rv小於等於2.0μm，將在以下方面存在較大意義：抑制因玻璃基板的彎曲或不當的溫度分佈所引起的拉伸應力的產生，並儘可能地降低應力集中，防止玻璃基板的破損。In the above Table 6, the maximum sectional height Pt of the end surface and the maximum sectional height Pt of the chamfered surface correspond to the maximum height Rmax in JIS B0601:1982, so the maximum sectional height Pt of the end surface and the maximum sectional height of the chamfered surface can be considered. Pt corresponds to the surface maximum unevenness of Patent Documents 1 and 2. Further, in the glass substrate of the comparative example, the maximum height Pt of the chamfered surface is 5.57 μm and 7 μm or less (0.007 mm), and the maximum height Pt of the end surface is 7.44 μm and 40 μm (0.04 mm) or less. The conditions of the numerical range described in Patent Documents 1 and 2. However, the inventors of the present invention confirmed that the glass substrate of the comparative example frequently causes breakage in the production steps of FPD, organic EL, and solar cells. This means that the end surface strength of the glass substrate of the comparative example is insufficient. considering In this case, it can be understood that the end face strength needs to be 160 MPa. Further, in the examples 4a to 4d of the present invention, it is understood that the maximum valley depth Rv of the chamfered surface is 2.0 μm or less, whereby the end surface strength exceeds 160 MPa and has sufficient end surface strength. Therefore, it has been confirmed that the maximum valley depth Rv of the chamfered surface of the glass substrate is less than or equal to 2.0 μm, which is significant in that the generation of tensile stress due to bending of the glass substrate or improper temperature distribution is suppressed. And reduce stress concentration as much as possible to prevent breakage of the glass substrate.

而且，對玻璃原板進行雷射切斷來分割而成的玻璃基板中，形成平坦面的端面的面性狀與表背面同樣地接近鏡面，因此可推測：即便於該玻璃基板的該邊界部上與上述同樣地形成倒角面時，只要該倒角面的最大谷深Rv小於等於2.0μm，則可獲得與上述表6所示的較佳結果同等或更佳的結果。Further, in the glass substrate in which the glass original plate is subjected to laser cutting and division, the surface property of the end surface on which the flat surface is formed is similar to that of the front and back surfaces, and it is presumed that even at the boundary portion of the glass substrate When the chamfered surface is formed in the same manner as described above, as long as the maximum valley depth Rv of the chamfered surface is 2.0 μm or less, a result equivalent to or better than the preferable results shown in Table 6 above can be obtained.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

1、11‧‧‧玻璃基板1, 11‧‧‧ glass substrate

2a‧‧‧表面2a‧‧‧ surface

2a1‧‧‧表面(或背面)2a1‧‧‧Surface (or back)

2b‧‧‧背面2b‧‧‧back

3、3b、3b1‧‧‧端面3, 3b, 3b1‧‧‧ end face

3a‧‧‧端面部3a‧‧‧End face

4‧‧‧倒角面4‧‧‧Chamfered surface

5‧‧‧研磨工具(第1、第2研磨工具)5‧‧‧ Grinding tools (1st and 2nd grinding tools)

6‧‧‧第3研磨工具6‧‧‧3rd grinding tool

6a‧‧‧第3研磨工具的旋轉軸6a‧‧‧Rotation axis of the 3rd grinding tool

6b‧‧‧第3研磨工具的研磨面(研磨面)6b‧‧‧The grinding surface (grinding surface) of the third grinding tool

6b1‧‧‧磨石的研磨面6b1‧‧‧Grinding surface of grindstone

6ba‧‧‧第3研磨工具的研磨面(研磨面)的內周部6ba‧‧‧The inner peripheral part of the grinding surface (polishing surface) of the 3rd grinding tool

6bb‧‧‧第3研磨工具的研磨面(研磨面)的外周部6bb‧‧‧The outer peripheral part of the grinding surface (polishing surface) of the 3rd grinding tool

7‧‧‧作業台(平板)7‧‧‧Working table (flat)

A‧‧‧倒角面的朝向表面側的切線A‧‧‧ tangent to the surface side of the chamfered surface

B‧‧‧邊界部z的切線B‧‧‧ tangent to the boundary z

T‧‧‧板厚T‧‧‧ plate thickness

W‧‧‧與上述倒角面的長度方向正交的方向的寬度W‧‧‧Width in the direction orthogonal to the longitudinal direction of the chamfered surface

W1‧‧‧自邊界部z朝向端面3側的寬度W1‧‧‧Width from the boundary portion z toward the end face 3 side

W2‧‧‧自邊界部z朝向表面2a側的寬度W2‧‧‧Width from the boundary portion z toward the surface 2a side

X‧‧‧中心線X‧‧‧ center line

z、z1‧‧‧邊界部z, z1‧‧‧ borders

zx‧‧‧直線Zx‧‧‧ straight line

α‧‧‧切線與表面所成的角度‧‧‧‧The angle between the tangent and the surface

γ‧‧‧邊界部z的切線B與表面2a所成的角度γ‧‧‧An angle formed by the tangent B of the boundary portion z and the surface 2a

圖1是本發明的實施形態的玻璃基板的在與側緣部的長度方向正交的方向上切斷的端面的主要部分放大縱剖面圖。1 is an enlarged longitudinal cross-sectional view of an essential part of an end surface of a glass substrate according to an embodiment of the present invention, which is cut in a direction orthogonal to a longitudinal direction of a side edge portion.

圖2是表示切斷玻璃原板而得的玻璃基板、以及對該玻璃基板的端面部進行研磨的研磨工具的概略圖。2 is a schematic view showing a glass substrate obtained by cutting a glass original plate and a polishing tool for polishing an end surface portion of the glass substrate.

圖3是表示僅進行端面研磨處理的玻璃基板的主要部 分的縱剖面圖。Fig. 3 is a view showing main parts of a glass substrate which is subjected to only end surface polishing treatment; A longitudinal section of the subsection.

圖4是表示對端面處理後的玻璃基板進行倒角面的形成處理的狀態的概略前視圖。4 is a schematic front view showing a state in which a chamfered surface forming process is performed on the glass substrate after the end surface treatment.

圖5是表示對端面處理後的玻璃基板進行倒角面的形成處理的狀態的概略俯視圖。FIG. 5 is a schematic plan view showing a state in which a chamfered surface forming process is performed on the glass substrate after the end surface treatment.

圖6是表示倒角面形成後的玻璃基板的主要部分的概略俯視圖。FIG. 6 is a schematic plan view showing a main part of a glass substrate after the chamfered surface is formed.

圖7是表示用來表現先前問題的玻璃基板的主要部分的概略俯視圖。Fig. 7 is a schematic plan view showing a main part of a glass substrate for expressing a previous problem.

圖8是表示用來表現先前問題的玻璃基板的主要部分的縱剖面圖。Fig. 8 is a longitudinal cross-sectional view showing a main part of a glass substrate for expressing a prior problem.

1‧‧‧玻璃基板1‧‧‧ glass substrate

2a‧‧‧表面2a‧‧‧ surface

3‧‧‧端面3‧‧‧ end face

4‧‧‧倒角面4‧‧‧Chamfered surface

A‧‧‧倒角面的朝向表面側的切線A‧‧‧ tangent to the surface side of the chamfered surface

B‧‧‧邊界部z的切線B‧‧‧ tangent to the boundary z

T‧‧‧板厚T‧‧‧ plate thickness

W‧‧‧與上述倒角面的長度方向正交的方向的寬度W‧‧‧Width in the direction orthogonal to the longitudinal direction of the chamfered surface

W1‧‧‧自邊界部z朝向端面3側的寬度W1‧‧‧Width from the boundary portion z toward the end face 3 side

W2‧‧‧自邊界部z朝向表面2a側的寬度W2‧‧‧Width from the boundary portion z toward the surface 2a side

X‧‧‧中心線X‧‧‧ center line

z‧‧‧邊界部z‧‧‧Borders

α‧‧‧切線與表面所成的角度‧‧‧‧The angle between the tangent and the surface

γ‧‧‧邊界部z的切線B與表面2a所成的角度γ‧‧‧An angle formed by the tangent B of the boundary portion z and the surface 2a

Claims (15)

一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面中的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的微觀不平度的十點高度Rz2 小於上述端面的微觀不平度的十點高度Rz1 ，且該倒角面的粗糙度曲線要素的平均長度RSm2 大於上述端面的粗糙度曲線要素的平均長度RSm1 。A glass substrate comprising a front surface and a back surface, and an end surface existing between the outer peripheral ends of the both surfaces, wherein the glass substrate is formed on a boundary portion between at least one of the front surface and the back surface and the end surface a chamfered surface, a ten-point height Rz 2 of the microscopic unevenness of the chamfered surface is smaller than a ten-point height Rz 1 of the microscopic unevenness of the end surface, and an average length RSm 2 of the roughness curve element of the chamfered surface is larger than the end surface The average length of the roughness curve elements is RSm 1 . 如申請專利範圍第1項所述的玻璃基板，其中上述倒角面的微觀不平度的十點高度Rz2 以及上述端面的微觀不平度的十點高度Rz1 ，滿足Rz2 ≦1.5μm、且1.5≦Rz1 /Rz2 ≦10.0的關係。A glass substrate as defined in claim 1, item range, wherein the chamfered surface of the microscopic irregularities of the ten point height Rz 2 of the end face and the ten point average roughness Rz of a height, satisfying Rz 2 ≦ 1.5μm, and 1.5≦Rz 1 /Rz 2 ≦10.0 relationship. 如申請專利範圍第2項所述的玻璃基板，其中上述倒角面的粗糙度曲線要素的平均長度RSm2 滿足RSm2 ≧100μm的關係。The glass substrate according to claim 2, wherein the average length RSm 2 of the roughness curve elements of the chamfered surface satisfies the relationship of RSm 2 ≧ 100 μm. 一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面中的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的突出谷部深度Rvk滿足Rvk≦0.94μm的關係。 A glass substrate comprising a front surface and a back surface, and an end surface existing between the outer peripheral ends of the both surfaces, wherein the glass substrate is formed on a boundary portion between at least one of the front surface and the back surface and the end surface The chamfered surface, the protruding valley depth Rvk of the chamfered surface satisfies the relationship of Rvk ≦ 0.94 μm. 一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面中的至少一個面與上述端面之間的邊界部上形成著倒角面，該倒角面的粗糙度曲線的均方根斜率R△q 滿足R△q≦0.096的關係。 A glass substrate comprising a front surface and a back surface, and an end surface existing between the outer peripheral ends of the both surfaces, wherein the glass substrate is formed on a boundary portion between at least one of the front surface and the back surface and the end surface The chamfered surface, the root mean square slope RΔq of the roughness curve of the chamfered surface Satisfy the relationship of RΔq≦0.096. 一種玻璃基板，包括表面及背面、以及存在於該兩面的外周端彼此間的端面，該玻璃基板的特徵在於：在上述表面及背面中的至少一個面與上述端面之間的邊界部上形成倒角面，該倒角面的最大谷深Rv滿足Rv≦1.96μm的關係。 A glass substrate comprising a front surface and a back surface, and an end surface existing between the outer peripheral ends of the both surfaces, wherein the glass substrate is characterized by: forming a boundary portion between at least one of the front surface and the back surface and the end surface On the angular surface, the maximum valley depth Rv of the chamfered surface satisfies the relationship of Rv ≦ 1.96 μm. 如申請專利範圍第1項至第6項中任一項所述的玻璃基板，其中上述倒角面是藉由研磨處理而形成。 The glass substrate according to any one of claims 1 to 6, wherein the chamfered surface is formed by a rubbing treatment. 如申請專利範圍第7項所述的玻璃基板，其中上述倒角面是藉由上述端面的研磨處理後的研磨處理而形成。 The glass substrate according to claim 7, wherein the chamfered surface is formed by a polishing treatment after the polishing treatment of the end surface. 如申請專利範圍第8項所述的玻璃基板，其中上述端面在上述表面及背面的外周端的彼此間形成為平坦面。 The glass substrate according to claim 8, wherein the end surface is formed as a flat surface between the outer peripheral ends of the front surface and the back surface. 如申請專利範圍第8項所述的玻璃基板，其中上述端面形成為自上述表面及背面的外周端至板厚中央部而向外側逐漸突出的彎曲面。 The glass substrate according to claim 8, wherein the end surface is formed as a curved surface that gradually protrudes outward from an outer peripheral end of the front surface and the back surface to a central portion of the thickness. 如申請專利範圍第10項所述的玻璃基板，其中在與上述端面的長度方向正交、且與上述表面及背面正交的剖面中，表面側的邊界部上所形成的上述倒角面的朝向表面側的切線與上述表面所成的角度α、以及背面側的邊界部上所形成的上述倒角面的朝向背面側的切線與上述背面所成的角度β，分別滿足10°≦α≦30°以及10°≦ β≦30°的關係。 The glass substrate according to claim 10, wherein the chamfered surface formed on the boundary portion on the front side in a cross section orthogonal to the longitudinal direction of the end surface and orthogonal to the front surface and the back surface An angle α between the tangent to the front surface and the angle α formed by the surface, and an angle β between the tangent to the back surface of the chamfered surface formed on the boundary portion on the back side and the back surface respectively satisfy 10°≦α≦ 30° and 10°≦ The relationship between β≦30°. 如申請專利範圍第11項所述的玻璃基板，其中板厚T滿足0.05mm≦T≦1.1mm的關係。 The glass substrate according to claim 11, wherein the sheet thickness T satisfies the relationship of 0.05 mm ≦ T ≦ 1.1 mm. 如申請專利範圍第12項所述的玻璃基板，其中板厚T、以及與上述倒角面的長度方向正交的方向的寬度W滿足0.07≦W/T≦0.30的關係。 The glass substrate according to claim 12, wherein the plate thickness T and the width W in a direction orthogonal to the longitudinal direction of the chamfered surface satisfy a relationship of 0.07 ≦ W / T ≦ 0.30. 一種玻璃基板的製造方法，製造如申請專利範圍第7項所述的玻璃基板，其特徵在於：作為研磨上述倒角面的研磨工具，而使用具有與旋轉軸正交的研磨面的旋轉研磨工具，其中上述研磨面的外周部的粗糙度小於內周部的粗糙度，並且對於玻璃基板的表面及背面中的至少一個面與研磨處理後的端面之間的邊界部，使上述旋轉研磨工具一邊沿上述邊界部的長度方向作相對直線移動，一邊繞上述旋轉軸旋轉，藉此，由上述研磨面的外周部以及內周部兩者而形成上述倒角面。 A glass substrate according to claim 7, wherein the glass substrate according to claim 7 is characterized in that: as a polishing tool for polishing the chamfered surface, a rotary grinding tool having a polishing surface orthogonal to a rotation axis is used. The roughness of the outer peripheral portion of the polishing surface is smaller than the roughness of the inner peripheral portion, and the rotary grinding tool is provided at a boundary portion between at least one of the surface and the back surface of the glass substrate and the end surface after the polishing treatment. The chamfered surface is formed by both the outer peripheral portion and the inner peripheral portion of the polishing surface while being linearly moved in the longitudinal direction of the boundary portion and rotating around the rotation axis. 一種玻璃基板的製造方法，製造如申請專利範圍第8項所述的玻璃基板，其特徵在於：對玻璃基板的端面實施粗磨處理後再實施精磨處理，然後，在玻璃基板的表面及背面中的至少一個面與上述端面之間的邊界部上，使用具有較上述精磨處理更細的粒度的研磨工具來實施指定的研磨處理，藉此形成上述倒角面。 A glass substrate manufacturing method according to claim 8, wherein the glass substrate is subjected to a rough grinding treatment and then subjected to a finish grinding treatment, and then to the surface and the back surface of the glass substrate. A predetermined polishing process is performed on the boundary portion between at least one of the faces and the end face by using a grinding tool having a finer grain size than the above-described finish grinding process, thereby forming the chamfered surface.
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5907168B2 (en) * 2011-06-23 2016-04-20 旭硝子株式会社 LAMINATE MANUFACTURING METHOD AND LAMINATE
KR101974379B1 (en) 2012-05-22 2019-09-06 삼성디스플레이 주식회사 Substrate griding appatus and method thereof
KR20150011818A (en) * 2012-05-25 2015-02-02 아사히 가라스 가부시키가이샤 Chemically strengthened glass plate, cover glass, chemically strengthened glass with touch sensor, and display device
US20140080384A1 (en) * 2012-09-17 2014-03-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Edge-grinding machine for liquid crystal panel
US9470919B2 (en) 2013-05-14 2016-10-18 Microsoft Technology Licensing, Llc Methods for producing a glass-based non planar digital display
JP6238117B2 (en) * 2013-09-19 2017-11-29 旭硝子株式会社 Processing method of plate
JP6872903B2 (en) 2014-02-28 2021-05-19 コーニング インコーポレイテッド Glass processing equipment and glass processing method
DE102016107535A1 (en) 2016-04-22 2017-10-26 Schott Ag Flat glass product with increased edge strength and method for its production
JP6819853B2 (en) * 2016-07-19 2021-01-27 日本電気硝子株式会社 Disc-shaped flat glass and its manufacturing method
MY190084A (en) * 2016-08-25 2022-03-25 Shinetsu Chemical Co Rectangular glass substrate and method for preparing the same
US20200180210A1 (en) * 2017-08-30 2020-06-11 Nippon Electric Glass Co., Ltd. Transparent article
CN107608105A (en) * 2017-08-30 2018-01-19 广东深越光电技术有限公司 A kind of liquid crystal display die set that can increase effective display area
JP7045647B2 (en) * 2017-11-13 2022-04-01 日本電気硝子株式会社 Glass substrate
JP7022330B2 (en) * 2018-03-26 2022-02-18 日本電気硝子株式会社 Sheet glass manufacturing method and manufacturing equipment

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200506508A (en) * 2003-03-20 2005-02-16 Hoya Corp Reticle substrate, method of producing the same, mask blank and method of producing the same
TW200510260A (en) * 2003-07-18 2005-03-16 Shinetsu Chemical Co Large-sized substrate for photolithographic applications
TW200724510A (en) * 2005-12-26 2007-07-01 Nippon Electric Glass Co Glass substrate of flat display
TW200741308A (en) * 2006-02-22 2007-11-01 Central Glass Co Ltd Anti-glare glass substrate
TW200827100A (en) * 2006-10-06 2008-07-01 Nippon Electric Glass Co Grinding wheel
JP2008280245A (en) * 2008-08-12 2008-11-20 Shin Etsu Chem Co Ltd Large-size synthetic quartz glass substrate for exposure
TW200902467A (en) * 2007-03-02 2009-01-16 Nippon Electric Glass Co Reinforced plate glass and manufacturing method thereof
TW200906550A (en) * 2007-06-05 2009-02-16 Asahi Glass Co Ltd Method of polishing glass substrate

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4911743A (en) * 1986-05-29 1990-03-27 Hughes Aircraft Company Glass structure strengthening by etching
JP3008439B2 (en) * 1990-04-26 2000-02-14 日本油脂株式会社 Foaming shortening for cake
MY125707A (en) * 1994-10-26 2006-08-30 Nippon Sheet Glass Co Ltd Method of finishing edge of sheet glass, heat-tempered sheet grass using the method, and fire-resistant construction material using the heat-tempered sheet grass
JPH08118220A (en) * 1994-10-26 1996-05-14 Nippon Sheet Glass Co Ltd Method for finishing edge of plate glass
JPH09208246A (en) * 1995-10-16 1997-08-12 Central Glass Co Ltd Fireproof glass
JP3308446B2 (en) 1996-04-11 2002-07-29 日本板硝子株式会社 Heat-strengthened glass sheet and method for finishing edge portion thereof
JP3308447B2 (en) 1996-04-11 2002-07-29 日本板硝子株式会社 Heat-strengthened glass sheet and method for finishing edge portion thereof
US5939175A (en) * 1996-04-11 1999-08-17 Nippon Sheet Glass Co., Ltd. Method of finishing heat-reinforced plate glass and edge regions thereof
JP4406752B2 (en) * 2005-05-27 2010-02-03 日本電気硝子株式会社 Glass substrate end face processing apparatus and end face processing method
JP2007185753A (en) * 2006-01-16 2007-07-26 Shuji Horichi Grinding and polishing wheel
JP4821696B2 (en) * 2006-05-31 2011-11-24 日本電気硝子株式会社 Glass substrate for flat panel display
WO2008020509A1 (en) * 2006-08-14 2008-02-21 Asahi Glass Company, Limited Heat-resistant tempered glass and process for producing the same
JP4849341B2 (en) * 2007-04-17 2012-01-11 日本電気硝子株式会社 Glass substrate for flat panel display
JP2009134802A (en) * 2007-11-29 2009-06-18 Furukawa Electric Co Ltd:The Glass substrate for magnetic disk and magnetic disk apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200506508A (en) * 2003-03-20 2005-02-16 Hoya Corp Reticle substrate, method of producing the same, mask blank and method of producing the same
TW200510260A (en) * 2003-07-18 2005-03-16 Shinetsu Chemical Co Large-sized substrate for photolithographic applications
TW200724510A (en) * 2005-12-26 2007-07-01 Nippon Electric Glass Co Glass substrate of flat display
TW200741308A (en) * 2006-02-22 2007-11-01 Central Glass Co Ltd Anti-glare glass substrate
TW200827100A (en) * 2006-10-06 2008-07-01 Nippon Electric Glass Co Grinding wheel
TW200902467A (en) * 2007-03-02 2009-01-16 Nippon Electric Glass Co Reinforced plate glass and manufacturing method thereof
TW200906550A (en) * 2007-06-05 2009-02-16 Asahi Glass Co Ltd Method of polishing glass substrate
JP2008280245A (en) * 2008-08-12 2008-11-20 Shin Etsu Chem Co Ltd Large-size synthetic quartz glass substrate for exposure

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