TW200813236A - Junction structure for elemental device - Google Patents

Junction structure for elemental device Download PDF

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Publication number
TW200813236A
TW200813236A TW96129353A TW96129353A TW200813236A TW 200813236 A TW200813236 A TW 200813236A TW 96129353 A TW96129353 A TW 96129353A TW 96129353 A TW96129353 A TW 96129353A TW 200813236 A TW200813236 A TW 200813236A
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
alloy
layer
nitrogen
film
Prior art date
Application number
TW96129353A
Other languages
English (en)
Chinese (zh)
Inventor
Hironari Urabe
Yoshinori Matsuura
Takashi Kubota
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of TW200813236A publication Critical patent/TW200813236A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
TW96129353A 2006-08-09 2007-08-09 Junction structure for elemental device TW200813236A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006217228 2006-08-09
JP2006282051 2006-10-16

Publications (1)

Publication Number Publication Date
TW200813236A true TW200813236A (en) 2008-03-16

Family

ID=39033007

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96129353A TW200813236A (en) 2006-08-09 2007-08-09 Junction structure for elemental device

Country Status (4)

Country Link
JP (1) JPWO2008018478A1 (ko)
KR (1) KR20080086997A (ko)
TW (1) TW200813236A (ko)
WO (1) WO2008018478A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7968880B2 (en) 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
JP5518366B2 (ja) * 2008-05-16 2014-06-11 株式会社半導体エネルギー研究所 薄膜トランジスタ
CN102349159B (zh) * 2009-03-09 2014-03-12 株式会社半导体能源研究所 薄膜晶体管
JP5354781B2 (ja) 2009-03-11 2013-11-27 三菱マテリアル株式会社 バリア層を構成層とする薄膜トランジスターおよび前記バリア層のスパッタ成膜に用いられるＣｕ合金スパッタリングターゲット

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63178559A (ja) * 1987-01-19 1988-07-22 Sanyo Electric Co Ltd 薄膜トランジスタ
JP2000294556A (ja) * 1999-04-05 2000-10-20 Hitachi Metals Ltd ドライエッチング性に優れたＡｌ合金配線膜およびＡｌ合金配線膜形成用ターゲット
JP4179489B2 (ja) * 1999-08-11 2008-11-12 日立金属株式会社 Ａｌ合金電極膜の製造方法
JP3940385B2 (ja) * 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法

Also Published As

Publication number Publication date
JPWO2008018478A1 (ja) 2009-12-24
KR20080086997A (ko) 2008-09-29
WO2008018478A1 (fr) 2008-02-14

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