TW200725839A - Stacked wafer or die packaging with enhanced thermal and device performance - Google Patents

Stacked wafer or die packaging with enhanced thermal and device performance

Info

Publication number
TW200725839A
TW200725839A TW095139195A TW95139195A TW200725839A TW 200725839 A TW200725839 A TW 200725839A TW 095139195 A TW095139195 A TW 095139195A TW 95139195 A TW95139195 A TW 95139195A TW 200725839 A TW200725839 A TW 200725839A
Authority
TW
Taiwan
Prior art keywords
device performance
enhanced thermal
stacked wafer
die packaging
packaging
Prior art date
Application number
TW095139195A
Other languages
English (en)
Other versions
TWI340440B (en
Inventor
Rajashree Baskaran
Shriram Ramanathan
Patrick Morrow
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200725839A publication Critical patent/TW200725839A/zh
Application granted granted Critical
Publication of TWI340440B publication Critical patent/TWI340440B/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
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    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
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    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
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    • H01L2924/0001Technical content checked by a classifier
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Packaging Frangible Articles (AREA)
TW095139195A 2005-10-24 2006-10-24 Stacked wafer or die packaging with enhanced thermal and device performance TWI340440B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/257,595 US7723759B2 (en) 2005-10-24 2005-10-24 Stacked wafer or die packaging with enhanced thermal and device performance

Publications (2)

Publication Number Publication Date
TW200725839A true TW200725839A (en) 2007-07-01
TWI340440B TWI340440B (en) 2011-04-11

Family

ID=37845338

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095139195A TWI340440B (en) 2005-10-24 2006-10-24 Stacked wafer or die packaging with enhanced thermal and device performance

Country Status (6)

Country Link
US (1) US7723759B2 (zh)
CN (1) CN101292348B (zh)
DE (1) DE112006002909B4 (zh)
GB (1) GB2444467B (zh)
TW (1) TWI340440B (zh)
WO (1) WO2007050754A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI720094B (zh) * 2016-01-15 2021-03-01 台灣積體電路製造股份有限公司 整合式扇出型堆疊式封裝及其形成方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090108437A1 (en) * 2007-10-29 2009-04-30 M/A-Com, Inc. Wafer scale integrated thermal heat spreader
US8432022B1 (en) * 2009-09-29 2013-04-30 Amkor Technology, Inc. Shielded embedded electronic component substrate fabrication method and structure
US20110140232A1 (en) * 2009-12-15 2011-06-16 Intersil Americas Inc. Methods of forming a thermal conduction region in a semiconductor structure and structures resulting therefrom
US8294261B2 (en) * 2010-01-29 2012-10-23 Texas Instruments Incorporated Protruding TSV tips for enhanced heat dissipation for IC devices
KR101698932B1 (ko) * 2010-08-17 2017-01-23 삼성전자 주식회사 반도체 패키지 및 그 제조방법
CN104979305A (zh) * 2014-04-09 2015-10-14 中芯国际集成电路制造(上海)有限公司 一种半导体器件
US10998228B2 (en) 2014-06-12 2021-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned interconnect with protection layer
CN109863596B (zh) * 2019-01-22 2020-05-26 长江存储科技有限责任公司 集成电路封装结构及其制造方法
CN112701047A (zh) * 2019-10-23 2021-04-23 华通电脑股份有限公司 散热鳍片的制造方法
US11257753B2 (en) * 2020-01-21 2022-02-22 Taiwan Semiconductor Manufacturing Company Ltd. Interconnect structure and method for manufacturing the interconnect structure
EP3929971A1 (en) * 2020-06-24 2021-12-29 Imec VZW A method for inducing stress in semiconductor devices

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4842699A (en) * 1988-05-10 1989-06-27 Avantek, Inc. Method of selective via-hole and heat sink plating using a metal mask
JPH06310547A (ja) * 1993-02-25 1994-11-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
EP0742682B1 (en) * 1995-05-12 2005-02-23 STMicroelectronics, Inc. Low-profile socketed integrated circuit packaging system
JP2905736B2 (ja) * 1995-12-18 1999-06-14 株式会社エイ・ティ・アール光電波通信研究所 半導体装置
US6809421B1 (en) * 1996-12-02 2004-10-26 Kabushiki Kaisha Toshiba Multichip semiconductor device, chip therefor and method of formation thereof
US5991155A (en) * 1996-12-13 1999-11-23 Mitsubishi Denki Kabushiki Kaisha Heat sink assembly including flexible heat spreader sheet
US6451624B1 (en) * 1998-06-05 2002-09-17 Micron Technology, Inc. Stackable semiconductor package having conductive layer and insulating layers and method of fabrication
JP2000012723A (ja) * 1998-06-23 2000-01-14 Nitto Denko Corp 回路基板の実装構造体およびそれに用いる多層回路基板
US6278181B1 (en) * 1999-06-28 2001-08-21 Advanced Micro Devices, Inc. Stacked multi-chip modules using C4 interconnect technology having improved thermal management
US6573565B2 (en) * 1999-07-28 2003-06-03 International Business Machines Corporation Method and structure for providing improved thermal conduction for silicon semiconductor devices
US6091603A (en) * 1999-09-30 2000-07-18 International Business Machines Corporation Customizable lid for improved thermal performance of modules using flip chips
US6353256B1 (en) * 2000-09-11 2002-03-05 Siliconware Precision Industries Co., Ltd. IC package structure for achieving better heat dissipation
TW490820B (en) * 2000-10-04 2002-06-11 Advanced Semiconductor Eng Heat dissipation enhanced ball grid array package
US6653730B2 (en) * 2000-12-14 2003-11-25 Intel Corporation Electronic assembly with high capacity thermal interface
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6744135B2 (en) * 2001-05-22 2004-06-01 Hitachi, Ltd. Electronic apparatus
TW536795B (en) * 2001-05-30 2003-06-11 Apack Comm Inc Flip chip package of monolithic microwave integrated circuit
JP2005501413A (ja) * 2001-08-24 2005-01-13 エムシーエヌシー リサーチ アンド デベロップメント インスティテュート 貫通ビア垂直配線、貫通ビア型ヒートシンク及び関連する形成方法
US6599779B2 (en) * 2001-09-24 2003-07-29 St Assembly Test Service Ltd. PBGA substrate for anchoring heat sink
US6657296B2 (en) * 2001-09-25 2003-12-02 Siliconware Precision Industries Co., Ltd. Semicondctor package
US6861750B2 (en) * 2002-02-01 2005-03-01 Broadcom Corporation Ball grid array package with multiple interposers
JP4416376B2 (ja) * 2002-05-13 2010-02-17 富士通株式会社 半導体装置及びその製造方法
JP3908146B2 (ja) * 2002-10-28 2007-04-25 シャープ株式会社 半導体装置及び積層型半導体装置
JP2004175626A (ja) * 2002-11-28 2004-06-24 Sumitomo Electric Ind Ltd 高熱伝導性ダイヤモンド焼結体とそれを用いた半導体搭載用ヒートシンク及びその製造方法
JP4575782B2 (ja) 2002-12-20 2010-11-04 インターナショナル・ビジネス・マシーンズ・コーポレーション 3次元デバイスの製造方法
US6933602B1 (en) * 2003-07-14 2005-08-23 Lsi Logic Corporation Semiconductor package having a thermally and electrically connected heatspreader
TWI239603B (en) * 2003-09-12 2005-09-11 Advanced Semiconductor Eng Cavity down type semiconductor package
JP2006073651A (ja) * 2004-08-31 2006-03-16 Fujitsu Ltd 半導体装置
US20060103008A1 (en) * 2004-11-15 2006-05-18 Stats Chippac Ltd. Hyper thermally enhanced semiconductor package system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI720094B (zh) * 2016-01-15 2021-03-01 台灣積體電路製造股份有限公司 整合式扇出型堆疊式封裝及其形成方法

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US20070093066A1 (en) 2007-04-26
DE112006002909B4 (de) 2014-10-30
CN101292348B (zh) 2011-06-08
GB2444467A (en) 2008-06-04
WO2007050754A2 (en) 2007-05-03
WO2007050754A3 (en) 2007-06-14
GB0806342D0 (en) 2008-05-14
CN101292348A (zh) 2008-10-22
GB2444467B (en) 2010-12-08
DE112006002909T5 (de) 2008-09-18
US7723759B2 (en) 2010-05-25

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