SG25395G - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
SG25395G
SG25395G SG25395A SG25395A SG25395G SG 25395 G SG25395 G SG 25395G SG 25395 A SG25395 A SG 25395A SG 25395 A SG25395 A SG 25395A SG 25395 G SG25395 G SG 25395G
Authority
SG
Singapore
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
SG25395A
Other languages
English (en)
Inventor
Kazunori Furusawa
Shinji Nabetani
Yoshiaki Kamigaki
Masaaki Tarasawa
Original Assignee
Hitachi Ltd
Hitachi Ulsi Eng Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60164099A external-priority patent/JPS6226697A/ja
Priority claimed from JP18424585A external-priority patent/JPH0799633B2/ja
Application filed by Hitachi Ltd, Hitachi Ulsi Eng Corp filed Critical Hitachi Ltd
Priority to SG25395A priority Critical patent/SG25395G/en
Publication of SG25395G publication Critical patent/SG25395G/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
SG25395A 1985-07-26 1995-02-16 Semiconductor memory device SG25395G (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG25395A SG25395G (en) 1985-07-26 1995-02-16 Semiconductor memory device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60164099A JPS6226697A (ja) 1985-07-26 1985-07-26 半導体記憶装置
JP18424585A JPH0799633B2 (ja) 1985-08-23 1985-08-23 Ｅｅｐｒｏｍ装置
SG25395A SG25395G (en) 1985-07-26 1995-02-16 Semiconductor memory device

Publications (1)

Publication Number Publication Date
SG25395G true SG25395G (en) 1995-09-01

Family

ID=26489325

Family Applications (1)

Application Number Title Priority Date Filing Date
SG25395A SG25395G (en) 1985-07-26 1995-02-16 Semiconductor memory device

Country Status (6)

Country Link
US (1) US4769787A (de)
EP (1) EP0209912B1 (de)
KR (1) KR940011426B1 (de)
DE (1) DE3687322T2 (de)
HK (1) HK103695A (de)
SG (1) SG25395G (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159688A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd 半導体集積回路装置
JPH081759B2 (ja) * 1987-11-24 1996-01-10 株式会社東芝 不揮発性メモリ
JPH01158777A (ja) * 1987-12-15 1989-06-21 Sony Corp フローティングゲート型不揮発性メモリ
US5253200A (en) * 1987-12-15 1993-10-12 Sony Corporation Electrically erasable and programmable read only memory using stacked-gate cell
KR930000963B1 (ko) * 1988-03-09 1993-02-11 가부시기가이샤 도오시바 불휘발성 메모리 회로장치
JPH0271499A (ja) * 1988-09-06 1990-03-12 Hitachi Ltd 半導体記憶装置
JP2573335B2 (ja) * 1988-11-09 1997-01-22 株式会社東芝 不揮発性メモリ
JPH0738274B2 (ja) * 1988-12-22 1995-04-26 株式会社東芝 不揮発性半導体メモリシステム
JPH04123471A (ja) * 1990-09-14 1992-04-23 Oki Electric Ind Co Ltd 半導体記憶装置のデータ書込みおよび消去方法
DE4133490C2 (de) * 1991-10-09 1999-06-10 Texas Instruments Deutschland Verfahren zum Betreiben einer mit einer Versorgungsspannung gespeisten integrierten Halbleiterspeichervorrichtung mit zeilen- und spaltenweise angeordneten Speicherzellen
US5761127A (en) * 1991-11-20 1998-06-02 Fujitsu Limited Flash-erasable semiconductor memory device having an improved reliability
EP0570597B1 (de) * 1991-12-09 2001-03-21 Fujitsu Limited Flash-speicher mit verbesserten löscheigenschaften und schaltung dafür
JP2822791B2 (ja) * 1992-06-30 1998-11-11 日本電気株式会社 半導体装置
AU5545794A (en) * 1992-11-02 1994-05-24 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
US5644533A (en) * 1992-11-02 1997-07-01 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
US5557569A (en) * 1993-10-12 1996-09-17 Texas Instruments Incorporated Low voltage flash EEPROM C-cell using fowler-nordheim tunneling
US5511026A (en) * 1993-12-01 1996-04-23 Advanced Micro Devices, Inc. Boosted and regulated gate power supply with reference tracking for multi-density and low voltage supply memories
US5789776A (en) * 1995-09-22 1998-08-04 Nvx Corporation Single poly memory cell and array
JP3223877B2 (ja) * 1998-03-27 2001-10-29 日本電気株式会社 半導体記憶装置
JP3874234B2 (ja) * 2000-04-06 2007-01-31 株式会社ルネサステクノロジ 半導体集積回路装置
US6844588B2 (en) 2001-12-19 2005-01-18 Freescale Semiconductor, Inc. Non-volatile memory
US8072834B2 (en) 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
US7859925B1 (en) 2006-03-31 2010-12-28 Cypress Semiconductor Corporation Anti-fuse latch self-test circuit and method
US7859906B1 (en) 2007-03-30 2010-12-28 Cypress Semiconductor Corporation Circuit and method to increase read margin in non-volatile memories using a differential sensing circuit
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US8036032B2 (en) * 2007-12-31 2011-10-11 Cypress Semiconductor Corporation 5T high density NVDRAM cell
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
IT1400967B1 (it) * 2010-06-15 2013-07-05 St Microelectronics Srl Dispositivo di memoria non volatile con circuito di riconnessione
IT1400968B1 (it) 2010-06-15 2013-07-05 St Microelectronics Srl Dispositivo di memoria non-volatile con scarica controllata

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156370A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device
JPS5835783A (ja) * 1981-08-24 1983-03-02 Fujitsu Ltd 半導体メモリ
JPS5955071A (ja) * 1982-09-24 1984-03-29 Hitachi Micro Comput Eng Ltd 不揮発性半導体装置

Also Published As

Publication number Publication date
DE3687322T2 (de) 1993-05-27
EP0209912A3 (en) 1989-02-01
EP0209912B1 (de) 1992-12-23
KR940011426B1 (ko) 1994-12-15
DE3687322D1 (de) 1993-02-04
KR870001664A (ko) 1987-03-17
US4769787A (en) 1988-09-06
EP0209912A2 (de) 1987-01-28
HK103695A (en) 1995-07-07

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