SG143940A1 - Process for depositing composite coating on a surface - Google Patents
Process for depositing composite coating on a surfaceInfo
- Publication number
- SG143940A1 SG143940A1 SG200307671-8A SG2003076718A SG143940A1 SG 143940 A1 SG143940 A1 SG 143940A1 SG 2003076718 A SG2003076718 A SG 2003076718A SG 143940 A1 SG143940 A1 SG 143940A1
- Authority
- SG
- Singapore
- Prior art keywords
- coating
- substrate
- power
- composite coating
- depositing composite
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200307671-8A SG143940A1 (en) | 2003-12-19 | 2003-12-19 | Process for depositing composite coating on a surface |
US11/016,117 US20050136656A1 (en) | 2003-12-19 | 2004-12-17 | Process for depositing composite coating on a surface |
JP2004367997A JP2005248322A (ja) | 2003-12-19 | 2004-12-20 | 表面上への複合コーティングの蒸着プロセス |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200307671-8A SG143940A1 (en) | 2003-12-19 | 2003-12-19 | Process for depositing composite coating on a surface |
Publications (1)
Publication Number | Publication Date |
---|---|
SG143940A1 true SG143940A1 (en) | 2008-07-29 |
Family
ID=34676098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200307671-8A SG143940A1 (en) | 2003-12-19 | 2003-12-19 | Process for depositing composite coating on a surface |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050136656A1 (ja) |
JP (1) | JP2005248322A (ja) |
SG (1) | SG143940A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4931939B2 (ja) * | 2006-03-09 | 2012-05-16 | アプライド マテリアルズ インコーポレイテッド | 半導体デバイスを形成する方法 |
US7678710B2 (en) * | 2006-03-09 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
US7645710B2 (en) | 2006-03-09 | 2010-01-12 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
KR101216199B1 (ko) * | 2006-03-09 | 2012-12-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 낮은 에너지 플라즈마 시스템을 이용하여 하이 유전상수 트랜지스터 게이트를 제조하기 위한 방법 및 장치 |
US7837838B2 (en) | 2006-03-09 | 2010-11-23 | Applied Materials, Inc. | Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus |
US20070209930A1 (en) * | 2006-03-09 | 2007-09-13 | Applied Materials, Inc. | Apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
US20080100915A1 (en) * | 2006-10-27 | 2008-05-01 | Kuohua Wu | Removal of oxidation layer from metal substrate and deposition of titanium adhesion layer on metal substrate |
DE102007027335A1 (de) * | 2007-06-14 | 2008-12-18 | Mtu Aero Engines Gmbh | Verschleißschutzbeschichtung und Bauteil mit einer Verschleißschutzbeschichtung |
US7966909B2 (en) * | 2007-07-25 | 2011-06-28 | The Gillette Company | Process of forming a razor blade |
US8980066B2 (en) * | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
US7846824B2 (en) * | 2008-03-18 | 2010-12-07 | Applied Materials, Inc. | Methods for forming a titanium nitride layer |
JP5234925B2 (ja) * | 2008-04-03 | 2013-07-10 | 株式会社神戸製鋼所 | 硬質皮膜およびその形成方法ならびに硬質皮膜被覆部材 |
TWI365562B (en) | 2008-10-03 | 2012-06-01 | Ind Tech Res Inst | Positive electrode and method for manufacturing the same and lithium battery utilizing the same |
CN101746083A (zh) * | 2008-12-17 | 2010-06-23 | 鸿富锦精密工业(深圳)有限公司 | 具有多层膜结构的基板 |
US9341923B2 (en) * | 2011-09-14 | 2016-05-17 | Nikon Corporation | Composite plastic member and method for producing the same |
CN105112874B (zh) * | 2015-09-24 | 2018-06-22 | 无锡市中捷减震器有限公司 | 磁控溅射微纳米膜的方法 |
US10927449B2 (en) | 2017-01-25 | 2021-02-23 | Applied Materials, Inc. | Extension of PVD chamber with multiple reaction gases, high bias power, and high power impulse source for deposition, implantation, and treatment |
CN109526193B (zh) * | 2018-11-07 | 2020-07-28 | 深圳科诺桥科技股份有限公司 | 电磁波屏蔽膜及其制备方法 |
CN112962066A (zh) * | 2021-02-04 | 2021-06-15 | 中国科学院兰州化学物理研究所 | 一种氧化铬宽温域自润滑自修复涂层的制备方法 |
CN114086123B (zh) * | 2021-11-23 | 2023-07-25 | 吉林大学 | 一种超耐磨宽带吸收涂层及其制备方法 |
CN114632909B (zh) * | 2022-01-17 | 2024-04-30 | 温州瑞明工业股份有限公司 | 一种压铸模具表面离子注入制备碳氧氮涂层的方法 |
CN115287587A (zh) * | 2022-07-21 | 2022-11-04 | 厦门建霖健康家居股份有限公司 | 一种在塑料基材上镀拉丝膜的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5584974A (en) * | 1995-10-20 | 1996-12-17 | Eni | Arc control and switching element protection for pulsed dc cathode sputtering power supply |
US5830330A (en) * | 1997-05-22 | 1998-11-03 | Tokyo Electron Limited | Method and apparatus for low pressure sputtering |
US6365009B1 (en) * | 1997-06-17 | 2002-04-02 | Anelva Corporation | Combined RF-DC magnetron sputtering method |
WO2003097892A2 (en) * | 2002-05-17 | 2003-11-27 | Applied Films Corporation | System and apparatus for control of sputter deposition process |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3649502A (en) * | 1969-08-14 | 1972-03-14 | Precision Instr Co | Apparatus for supported discharge sputter-coating of a substrate |
GB9006073D0 (en) * | 1990-03-17 | 1990-05-16 | D G Teer Coating Services Limi | Magnetron sputter ion plating |
US5338422A (en) * | 1992-09-29 | 1994-08-16 | The Boc Group, Inc. | Device and method for depositing metal oxide films |
US5789071A (en) * | 1992-11-09 | 1998-08-04 | Northwestern University | Multilayer oxide coatings |
JP3064769B2 (ja) * | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法 |
US6117495A (en) * | 1993-09-01 | 2000-09-12 | Polymerit | Method for forming a mold-release coating |
US6309916B1 (en) * | 1999-11-17 | 2001-10-30 | Amkor Technology, Inc | Method of molding plastic semiconductor packages |
ITRM20010060A1 (it) * | 2001-02-06 | 2001-05-07 | Carlo Misiano | Perfezionamento di un metodo e apparato per la deposizione di film sottili, soprattutto in condizioni reattive. |
-
2003
- 2003-12-19 SG SG200307671-8A patent/SG143940A1/en unknown
-
2004
- 2004-12-17 US US11/016,117 patent/US20050136656A1/en not_active Abandoned
- 2004-12-20 JP JP2004367997A patent/JP2005248322A/ja not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5584974A (en) * | 1995-10-20 | 1996-12-17 | Eni | Arc control and switching element protection for pulsed dc cathode sputtering power supply |
US5830330A (en) * | 1997-05-22 | 1998-11-03 | Tokyo Electron Limited | Method and apparatus for low pressure sputtering |
US6365009B1 (en) * | 1997-06-17 | 2002-04-02 | Anelva Corporation | Combined RF-DC magnetron sputtering method |
WO2003097892A2 (en) * | 2002-05-17 | 2003-11-27 | Applied Films Corporation | System and apparatus for control of sputter deposition process |
Also Published As
Publication number | Publication date |
---|---|
US20050136656A1 (en) | 2005-06-23 |
JP2005248322A (ja) | 2005-09-15 |
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