WO2006094821A3 - Verfahren zum herstellen einer dünnen magnesiumoxidschicht - Google Patents
Verfahren zum herstellen einer dünnen magnesiumoxidschicht Download PDFInfo
- Publication number
- WO2006094821A3 WO2006094821A3 PCT/EP2006/002228 EP2006002228W WO2006094821A3 WO 2006094821 A3 WO2006094821 A3 WO 2006094821A3 EP 2006002228 W EP2006002228 W EP 2006002228W WO 2006094821 A3 WO2006094821 A3 WO 2006094821A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- magnesium oxide
- layer
- producing
- oxide layer
- produced
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
- H01F41/307—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Magnetic Heads (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
Abstract
Beschrieben wird ein Verfahren zum Herstellen von dünnen Magnesiumoxidschichten auf einem Substrat, wobei zunächst eine Schicht. aus metallischem Magnesium auf dem Substrat aufgebracht und danach die Magnesiumschicht durch Oxidation, z. B. durch Behandlung in einem Sauerstoff ionen enthaltenden Plasma in eine Magnesiumoxidschicht umgewandelt wird. Mit diesem Verfahren konnten insbesondere TMR-Schichtsysteme hergestellt werden, bei denen die isolierende Barriere- oder Zwischenschicht mit dem vorgenannten Verfahren hergestellt wird. Das beschriebene Verfahren ermöglicht sehr dünne Magnesiumoxidschichten mit geringen dicken Toleranzen.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200510011414 DE102005011414A1 (de) | 2005-03-11 | 2005-03-11 | Verfahren zum Herstellen einer dünnen Magnesiumoxidschicht mittels Plasma-Oxidation |
DE102005011414.8 | 2005-03-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006094821A2 WO2006094821A2 (de) | 2006-09-14 |
WO2006094821A3 true WO2006094821A3 (de) | 2007-04-26 |
Family
ID=36778295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2006/002228 WO2006094821A2 (de) | 2005-03-11 | 2006-03-10 | Verfahren zum herstellen einer dünnen magnesiumoxidschicht |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102005011414A1 (de) |
WO (1) | WO2006094821A2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7479394B2 (en) * | 2005-12-22 | 2009-01-20 | Magic Technologies, Inc. | MgO/NiFe MTJ for high performance MRAM application |
DE102010060910A1 (de) * | 2010-11-30 | 2012-05-31 | Roth & Rau Ag | Verfahren und Vorrichtung zur Ionenimplantation |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10008482A1 (de) * | 2000-02-24 | 2001-09-13 | Ccr Gmbh Beschichtungstechnolo | Hochfrequenz-Plasmaquelle |
DE10031002A1 (de) * | 2000-06-30 | 2002-01-10 | Ccr Gmbh Beschichtungstechnolo | Verfahren zur Herstellung dünner Oxid- oder Nitridschichten |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003283000A (ja) * | 2002-03-27 | 2003-10-03 | Toshiba Corp | 磁気抵抗効果素子およびこれを有する磁気メモリ |
-
2005
- 2005-03-11 DE DE200510011414 patent/DE102005011414A1/de not_active Withdrawn
-
2006
- 2006-03-10 WO PCT/EP2006/002228 patent/WO2006094821A2/de active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10008482A1 (de) * | 2000-02-24 | 2001-09-13 | Ccr Gmbh Beschichtungstechnolo | Hochfrequenz-Plasmaquelle |
DE10031002A1 (de) * | 2000-06-30 | 2002-01-10 | Ccr Gmbh Beschichtungstechnolo | Verfahren zur Herstellung dünner Oxid- oder Nitridschichten |
Non-Patent Citations (2)
Title |
---|
HEHN M ET AL: "Low-height sputter-deposited magnesium oxide tunnel barriers: experimental report and free electron modeling", EUROPEAN PHYSICAL JOURNAL B. CONDENSED MATTER, EDP SCIENCES; SPRINGER VERLAG, LES ULIS,, FR, vol. 40, no. 1, July 2004 (2004-07-01), pages 19 - 23, XP002365185, ISSN: 1434-6028 * |
KROZER A ET AL: "Hydrogen sorption kinetics in partly oxidized Mg films", JOURNAL OF ALLOYS AND COMPOUNDS, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 237, 15 April 1996 (1996-04-15), pages 74 - 80, XP004077066, ISSN: 0925-8388 * |
Also Published As
Publication number | Publication date |
---|---|
DE102005011414A1 (de) | 2006-09-14 |
WO2006094821A2 (de) | 2006-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009134840A3 (en) | Selective cobalt deposition on copper surfaces | |
TW200629408A (en) | Atomic layer deposited titanium aluminum oxide films | |
WO2008008753A3 (en) | A method for fabricating a gate dielectric layer utilized in a gate structure | |
WO2005076918A3 (en) | Barrier layer process and arrangement | |
WO2010025068A3 (en) | Cobalt deposition on barrier surfaces | |
WO2011008925A3 (en) | Methods for forming dielectric layers | |
WO2007140424A3 (en) | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen | |
WO2008064246A3 (en) | Method of clustering sequential processing for a gate stack structure | |
SG143940A1 (en) | Process for depositing composite coating on a surface | |
WO2004085305A3 (en) | Metal oxide-containing nanoparticles | |
WO2004068389A3 (en) | Method of forming a conductive metal region on a substrate | |
TW200612381A (en) | Method and apparatus for manufacturing display | |
JP2009158782A5 (de) | ||
WO2005034195A3 (en) | Growth of high-k dielectrics by atomic layer deposition | |
TW200722543A (en) | Improving adhesion and minimizing oxidation on electroless Co alloy films for integration with low k inter-metal dielectric and etch stop | |
WO2010025696A3 (de) | Verfahren zur herstellung eines organischen strahlungsemittierenden bauelements und organisches strahlungsemittierendes bauelement | |
MY158913A (en) | Material for electric contact and method of producing the same | |
TW200605221A (en) | Adhesion improvement for low k dielectrics | |
WO2004077519A3 (en) | Dielectric barrier layer films | |
WO2009092816A3 (en) | Permeation barrier layer | |
ZA200808685B (en) | Process for producing a corrosion-protected and high-gloss substrate | |
MX2010005433A (es) | Metodo para la produccion de componentes revestidos y endurecidos hechos de acero y cinta de acero revestida y capaz de ser endurecida para este proposito. | |
PL2195885T3 (pl) | Elektryczny element stykowy i sposób jego wytwarzania | |
WO2007040718A3 (en) | Multi-source method and system for forming an oxide layer | |
WO2005029568A3 (en) | INTERFACIAL OXIDATION PROCESS FOR HIGH-k GATE DIELECTRIC PROCESS INTEGRATION |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
NENP | Non-entry into the national phase |
Ref country code: DE |
|
NENP | Non-entry into the national phase |
Ref country code: RU |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: RU |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 06707523 Country of ref document: EP Kind code of ref document: A2 |