DE221563C
(ja)
|
|
|
|
|
DE206607C
(ja)
|
|
|
|
|
DE224448C
(ja)
|
|
|
|
|
DE242880C
(ja)
|
|
|
|
|
GB1242527A
(en)
|
1967-10-20 |
1971-08-11 |
Kodak Ltd |
Optical instruments
|
US3573975A
(en)
|
1968-07-10 |
1971-04-06 |
Ibm |
Photochemical fabrication process
|
US3903413A
(en)
|
1973-12-06 |
1975-09-02 |
Polaroid Corp |
Glass-filled polymeric filter element
|
US4280054A
(en)
|
1979-04-30 |
1981-07-21 |
Varian Associates, Inc. |
X-Y Work table
|
DE2963537D1
(en)
|
1979-07-27 |
1982-10-07 |
Tabarelli Werner W |
Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
|
JPS5645021A
(en)
|
1979-09-19 |
1981-04-24 |
Hitachi Ltd |
Moving apparatus
|
FR2474708B1
(fr)
|
1980-01-24 |
1987-02-20 |
Dme |
Procede de microphotolithographie a haute resolution de traits
|
JPS5754317A
(en)
|
1980-09-19 |
1982-03-31 |
Hitachi Ltd |
Method and device for forming pattern
|
US4509852A
(en)
|
1980-10-06 |
1985-04-09 |
Werner Tabarelli |
Apparatus for the photolithographic manufacture of integrated circuit elements
|
US4346164A
(en)
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
JPS57117238A
(en)
|
1981-01-14 |
1982-07-21 |
Nippon Kogaku Kk <Nikon> |
Exposing and baking device for manufacturing integrated circuit with illuminometer
|
US4390273A
(en)
|
1981-02-17 |
1983-06-28 |
Censor Patent-Und Versuchsanstalt |
Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
|
JPS57153433A
(en)
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
JPS58202448A
(ja)
|
1982-05-21 |
1983-11-25 |
Hitachi Ltd |
露光装置
|
DD206607A1
(de)
|
1982-06-16 |
1984-02-01 |
Mikroelektronik Zt Forsch Tech |
Verfahren und vorrichtung zur beseitigung von interferenzeffekten
|
JPS596274A
(ja)
|
1982-07-05 |
1984-01-13 |
Seiko Epson Corp |
液晶組成物
|
DE3318980C2
(de)
*
|
1982-07-09 |
1986-09-18 |
Perkin-Elmer Censor Anstalt, Vaduz |
Vorrichtung zum Justieren beim Projektionskopieren von Masken
|
JPS5919912A
(ja)
|
1982-07-26 |
1984-02-01 |
Hitachi Ltd |
液浸距離保持装置
|
DD242880A1
(de)
|
1983-01-31 |
1987-02-11 |
Kuch Karl Heinz |
Einrichtung zur fotolithografischen strukturuebertragung
|
DD221563A1
(de)
|
1983-09-14 |
1985-04-24 |
Mikroelektronik Zt Forsch Tech |
Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
|
DD224448A1
(de)
*
|
1984-03-01 |
1985-07-03 |
Zeiss Jena Veb Carl |
Einrichtung zur fotolithografischen strukturuebertragung
|
GB8427357D0
(en)
|
1984-10-30 |
1984-12-05 |
Davy Mckee Stockton |
Assembly of blast furnace shell
|
US4887904A
(en)
|
1985-08-23 |
1989-12-19 |
Canon Kabushiki Kaisha |
Device for positioning a semi-conductor wafer
|
US4853880A
(en)
|
1985-08-23 |
1989-08-01 |
Canon Kabushiki Kaisha |
Device for positioning a semi-conductor wafer
|
JPH0247515Y2
(ja)
|
1985-08-28 |
1990-12-13 |
|
|
JPS6265326A
(ja)
|
1985-09-18 |
1987-03-24 |
Hitachi Ltd |
露光装置
|
JPS6265326U
(ja)
|
1985-10-16 |
1987-04-23 |
|
|
US5162642A
(en)
|
1985-11-18 |
1992-11-10 |
Canon Kabushiki Kaisha |
Device for detecting the position of a surface
|
JPS62121417A
(ja)
|
1985-11-22 |
1987-06-02 |
Hitachi Ltd |
液浸対物レンズ装置
|
JPS62121417U
(ja)
|
1986-01-24 |
1987-08-01 |
|
|
JPS63157419A
(ja)
|
1986-12-22 |
1988-06-30 |
Toshiba Corp |
微細パタ−ン転写装置
|
JPS63157419U
(ja)
|
1987-03-31 |
1988-10-14 |
|
|
US5040020A
(en)
|
1988-03-31 |
1991-08-13 |
Cornell Research Foundation, Inc. |
Self-aligned, high resolution resonant dielectric lithography
|
US5523193A
(en)
|
1988-05-31 |
1996-06-04 |
Texas Instruments Incorporated |
Method and apparatus for patterning and imaging member
|
JPH0228312A
(ja)
*
|
1988-07-18 |
1990-01-30 |
Nikon Corp |
露光装置
|
JPH0247515A
(ja)
|
1988-08-09 |
1990-02-16 |
Mitsubishi Electric Corp |
光学式エンコーダ
|
JPH03209479A
(ja)
|
1989-09-06 |
1991-09-12 |
Sanee Giken Kk |
露光方法
|
EP0527166B1
(de)
|
1990-05-02 |
1995-06-14 |
Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. |
Belichtungsvorrichtung
|
JP2559076B2
(ja)
|
1990-06-28 |
1996-11-27 |
キヤノン株式会社 |
プリアライメント装置
|
US5121256A
(en)
|
1991-03-14 |
1992-06-09 |
The Board Of Trustees Of The Leland Stanford Junior University |
Lithography system employing a solid immersion lens
|
JPH04305915A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
JPH04305917A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
US5243195A
(en)
|
1991-04-25 |
1993-09-07 |
Nikon Corporation |
Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
|
JP3218478B2
(ja)
*
|
1992-09-04 |
2001-10-15 |
株式会社ニコン |
投影露光装置及び方法
|
JPH0562877A
(ja)
|
1991-09-02 |
1993-03-12 |
Yasuko Shinohara |
光によるlsi製造縮小投影露光装置の光学系
|
US6078380A
(en)
|
1991-10-08 |
2000-06-20 |
Nikon Corporation |
Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure
|
US5229872A
(en)
|
1992-01-21 |
1993-07-20 |
Hughes Aircraft Company |
Exposure device including an electrically aligned electronic mask for micropatterning
|
JPH05251544A
(ja)
|
1992-03-05 |
1993-09-28 |
Fujitsu Ltd |
搬送装置
|
JPH05304072A
(ja)
|
1992-04-08 |
1993-11-16 |
Nec Corp |
半導体装置の製造方法
|
JPH06124873A
(ja)
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
JP2753930B2
(ja)
*
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
JP2520833B2
(ja)
|
1992-12-21 |
1996-07-31 |
東京エレクトロン株式会社 |
浸漬式の液処理装置
|
JP3747958B2
(ja)
|
1995-04-07 |
2006-02-22 |
株式会社ニコン |
反射屈折光学系
|
US5654553A
(en)
*
|
1993-06-10 |
1997-08-05 |
Nikon Corporation |
Projection exposure apparatus having an alignment sensor for aligning a mask image with a substrate
|
JPH07220990A
(ja)
|
1994-01-28 |
1995-08-18 |
Hitachi Ltd |
パターン形成方法及びその露光装置
|
US5528118A
(en)
|
1994-04-01 |
1996-06-18 |
Nikon Precision, Inc. |
Guideless stage with isolated reaction stage
|
US5874820A
(en)
|
1995-04-04 |
1999-02-23 |
Nikon Corporation |
Window frame-guided stage mechanism
|
US5517344A
(en)
|
1994-05-20 |
1996-05-14 |
Prime View Hk Limited |
System for protection of drive circuits formed on a substrate of a liquid crystal display
|
US5633968A
(en)
|
1994-07-18 |
1997-05-27 |
Sheem; Sang K. |
Face-lock interconnection means for optical fibers and other optical components and manufacturing methods of the same
|
US5623853A
(en)
|
1994-10-19 |
1997-04-29 |
Nikon Precision Inc. |
Precision motion stage with single guide beam and follower stage
|
JP3387075B2
(ja)
|
1994-12-12 |
2003-03-17 |
株式会社ニコン |
走査露光方法、露光装置、及び走査型露光装置
|
JPH08171054A
(ja)
|
1994-12-16 |
1996-07-02 |
Nikon Corp |
反射屈折光学系
|
JPH08316125A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
JPH08316124A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
JP3287761B2
(ja)
|
1995-06-19 |
2002-06-04 |
日本電信電話株式会社 |
真空吸着装置および加工装置
|
US5883704A
(en)
|
1995-08-07 |
1999-03-16 |
Nikon Corporation |
Projection exposure apparatus wherein focusing of the apparatus is changed by controlling the temperature of a lens element of the projection optical system
|
JPH09184787A
(ja)
|
1995-12-28 |
1997-07-15 |
Olympus Optical Co Ltd |
光学レンズ用解析評価装置
|
WO1997033205A1
(en)
|
1996-03-06 |
1997-09-12 |
Philips Electronics N.V. |
Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
|
KR970067585A
(ko)
|
1996-03-25 |
1997-10-13 |
오노 시게오 |
결상특성의 측정방법 및 투영노광방법
|
JPH09283407A
(ja)
|
1996-04-12 |
1997-10-31 |
Nikon Corp |
露光装置
|
JPH1020195A
(ja)
|
1996-06-28 |
1998-01-23 |
Nikon Corp |
反射屈折光学系
|
WO1998009278A1
(en)
|
1996-08-26 |
1998-03-05 |
Digital Papyrus Technologies |
Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
|
JPH1092728A
(ja)
|
1996-09-11 |
1998-04-10 |
Canon Inc |
基板保持装置およびこれを用いた露光装置
|
US5825043A
(en)
*
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
JPH10135316A
(ja)
|
1996-10-28 |
1998-05-22 |
Sony Corp |
薄板状基板の真空吸着方法及びその真空吸着テーブル装置
|
JPH10160582A
(ja)
|
1996-12-02 |
1998-06-19 |
Nikon Corp |
透過波面測定用干渉計
|
DE69717975T2
(de)
|
1996-12-24 |
2003-05-28 |
Asml Netherlands Bv |
In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
|
ATE216091T1
(de)
|
1997-01-29 |
2002-04-15 |
Micronic Laser Systems Ab |
Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
|
JP3612920B2
(ja)
|
1997-02-14 |
2005-01-26 |
ソニー株式会社 |
光学記録媒体の原盤作製用露光装置
|
SE509062C2
(sv)
|
1997-02-28 |
1998-11-30 |
Micronic Laser Systems Ab |
Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
|
US6262796B1
(en)
|
1997-03-10 |
2001-07-17 |
Asm Lithography B.V. |
Positioning device having two object holders
|
JPH10255319A
(ja)
|
1997-03-12 |
1998-09-25 |
Hitachi Maxell Ltd |
原盤露光装置及び方法
|
JP3747566B2
(ja)
|
1997-04-23 |
2006-02-22 |
株式会社ニコン |
液浸型露光装置
|
JP3817836B2
(ja)
|
1997-06-10 |
2006-09-06 |
株式会社ニコン |
露光装置及びその製造方法並びに露光方法及びデバイス製造方法
|
JPH1116816A
(ja)
|
1997-06-25 |
1999-01-22 |
Nikon Corp |
投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
|
US5900354A
(en)
|
1997-07-03 |
1999-05-04 |
Batchelder; John Samuel |
Method for optical inspection and lithography
|
JP3495891B2
(ja)
*
|
1997-10-22 |
2004-02-09 |
株式会社湯山製作所 |
薬剤分割包装装置
|
JPH11176727A
(ja)
|
1997-12-11 |
1999-07-02 |
Nikon Corp |
投影露光装置
|
WO1999031717A1
(fr)
|
1997-12-12 |
1999-06-24 |
Nikon Corporation |
Procede d'exposition par projection et graveur a projection
|
WO1999039375A1
(fr)
|
1998-01-29 |
1999-08-05 |
Nikon Corporation |
Luxmetre et systeme d'exposition
|
JPH11239758A
(ja)
|
1998-02-26 |
1999-09-07 |
Dainippon Screen Mfg Co Ltd |
基板処理装置
|
AU2747999A
(en)
|
1998-03-26 |
1999-10-18 |
Nikon Corporation |
Projection exposure method and system
|
JPH11297615A
(ja)
|
1998-04-09 |
1999-10-29 |
Nikon Corp |
投影露光装置および該装置を用いた半導体デバイスの製造方法
|
US6031946A
(en)
|
1998-04-16 |
2000-02-29 |
Lucent Technologies Inc. |
Moving mirror switch
|
US5997963A
(en)
|
1998-05-05 |
1999-12-07 |
Ultratech Stepper, Inc. |
Microchamber
|
JP4505989B2
(ja)
|
1998-05-19 |
2010-07-21 |
株式会社ニコン |
収差測定装置並びに測定方法及び該装置を備える投影露光装置並びに該方法を用いるデバイス製造方法、露光方法
|
JP2000058436A
(ja)
|
1998-08-11 |
2000-02-25 |
Nikon Corp |
投影露光装置及び露光方法
|
JP2000097616A
(ja)
|
1998-09-22 |
2000-04-07 |
Nikon Corp |
干渉計
|
US6333775B1
(en)
|
1999-01-13 |
2001-12-25 |
Euv Llc |
Extreme-UV lithography vacuum chamber zone seal
|
JP3796369B2
(ja)
|
1999-03-24 |
2006-07-12 |
キヤノン株式会社 |
干渉計を搭載した投影露光装置
|
TW552480B
(en)
|
1999-04-19 |
2003-09-11 |
Asml Netherlands Bv |
Moveable support in a vacuum chamber and its application in lithographic projection apparatus
|
TWI242111B
(en)
|
1999-04-19 |
2005-10-21 |
Asml Netherlands Bv |
Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
|
JP2001023190A
(ja)
*
|
1999-07-07 |
2001-01-26 |
Sony Corp |
露光装置、露光方法、光ディスク装置、及び記録及び/又は再生方法
|
EP1077393A2
(en)
|
1999-08-19 |
2001-02-21 |
Canon Kabushiki Kaisha |
Substrate attracting and holding system for use in exposure apparatus
|
JP3548464B2
(ja)
|
1999-09-01 |
2004-07-28 |
キヤノン株式会社 |
露光方法及び走査型露光装置
|
DE69930398T2
(de)
|
1999-09-20 |
2006-10-19 |
Nikon Corp. |
Belichtungssystem mit einem parallelen Verbindungsmechanismus und Belichtungsverfahren
|
JP4504479B2
(ja)
|
1999-09-21 |
2010-07-14 |
オリンパス株式会社 |
顕微鏡用液浸対物レンズ
|
JP2001118773A
(ja)
|
1999-10-18 |
2001-04-27 |
Nikon Corp |
ステージ装置及び露光装置
|
KR100773165B1
(ko)
|
1999-12-24 |
2007-11-02 |
가부시키가이샤 에바라 세이사꾸쇼 |
반도체기판처리장치 및 처리방법
|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
US6995930B2
(en)
|
1999-12-29 |
2006-02-07 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
TWI256484B
(en)
|
2000-02-23 |
2006-07-01 |
Asml Netherlands Bv |
Method of measuring aberration in an optical imaging system
|
JP2001272604A
(ja)
|
2000-03-27 |
2001-10-05 |
Olympus Optical Co Ltd |
液浸対物レンズおよびそれを用いた光学装置
|
JP2001281050A
(ja)
|
2000-03-30 |
2001-10-10 |
Canon Inc |
光検出装置、露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
|
US20020041377A1
(en)
|
2000-04-25 |
2002-04-11 |
Nikon Corporation |
Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
|
JP4503906B2
(ja)
|
2000-05-03 |
2010-07-14 |
エーエスエムエル ホールディング エヌ.ブイ. |
パージガスを用いた非接触型シール
|
JP2001358056A
(ja)
|
2000-06-15 |
2001-12-26 |
Canon Inc |
露光装置
|
JP2002005737A
(ja)
|
2000-06-20 |
2002-01-09 |
Komatsu Ltd |
光検出装置
|
US7234477B2
(en)
|
2000-06-30 |
2007-06-26 |
Lam Research Corporation |
Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
|
TW591653B
(en)
|
2000-08-08 |
2004-06-11 |
Koninkl Philips Electronics Nv |
Method of manufacturing an optically scannable information carrier
|
EP1566695B1
(en)
*
|
2000-08-25 |
2007-10-31 |
ASML Netherlands B.V. |
Lithographic apparatus
|
DE60116967T2
(de)
*
|
2000-08-25 |
2006-09-21 |
Asml Netherlands B.V. |
Lithographischer Apparat
|
JP2002071513A
(ja)
|
2000-08-28 |
2002-03-08 |
Nikon Corp |
液浸系顕微鏡対物レンズ用干渉計および液浸系顕微鏡対物レンズの評価方法
|
JP4692862B2
(ja)
|
2000-08-28 |
2011-06-01 |
株式会社ニコン |
検査装置、該検査装置を備えた露光装置、およびマイクロデバイスの製造方法
|
TW497013B
(en)
*
|
2000-09-07 |
2002-08-01 |
Asm Lithography Bv |
Method for calibrating a lithographic projection apparatus and apparatus capable of applying such a method
|
DE10050349C2
(de)
*
|
2000-10-11 |
2002-11-07 |
Schott Glas |
Verfahren zur Bestimmung der Strahlenbeständigkeit von Kristallen und deren Verwendung
|
JP2002151400A
(ja)
|
2000-11-15 |
2002-05-24 |
Canon Inc |
露光装置、その保守方法並びに同装置を用いた半導体デバイス製造方法及び半導体製造工場
|
JP2002158154A
(ja)
|
2000-11-16 |
2002-05-31 |
Canon Inc |
露光装置
|
DE10058810A1
(de)
|
2000-11-27 |
2002-06-06 |
Philips Corp Intellectual Pty |
Röntgendetektormodul
|
JP2002170754A
(ja)
*
|
2000-11-30 |
2002-06-14 |
Nikon Corp |
露光装置、光学特性検出方法及び露光方法
|
GB2369724B
(en)
|
2000-12-04 |
2003-04-30 |
Infrared Integrated Syst Ltd |
Improving individual detector performance in radiation detector arrays
|
JP2002170765A
(ja)
|
2000-12-04 |
2002-06-14 |
Nikon Corp |
ステージ装置及び露光装置
|
KR100866818B1
(ko)
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
EP1231513A1
(en)
|
2001-02-08 |
2002-08-14 |
Asm Lithography B.V. |
Lithographic projection apparatus with adjustable focal surface
|
US20060285100A1
(en)
|
2001-02-13 |
2006-12-21 |
Nikon Corporation |
Exposure apparatus and exposure method, and device manufacturing method
|
EP1231514A1
(en)
|
2001-02-13 |
2002-08-14 |
Asm Lithography B.V. |
Measurement of wavefront aberrations in a lithographic projection apparatus
|
JP4921644B2
(ja)
|
2001-02-27 |
2012-04-25 |
オリンパス株式会社 |
波面測定装置および波面測定方法
|
JP2002296005A
(ja)
|
2001-03-29 |
2002-10-09 |
Nikon Corp |
アライメント方法、点回折干渉計測装置、及び該装置を用いた高精度投影レンズ製造方法
|
WO2002091078A1
(en)
|
2001-05-07 |
2002-11-14 |
Massachusetts Institute Of Technology |
Methods and apparatus employing an index matching medium
|
US6598974B2
(en)
|
2001-05-08 |
2003-07-29 |
Johnson & Johnson Vision Care, Inc. |
Method and apparatus for measuring wavefront aberrations
|
US7015491B2
(en)
|
2001-06-01 |
2006-03-21 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and device manufactured thereby, control system
|
US6788385B2
(en)
|
2001-06-21 |
2004-09-07 |
Nikon Corporation |
Stage device, exposure apparatus and method
|
DE60209652T2
(de)
|
2001-08-23 |
2006-12-21 |
Asml Netherlands B.V. |
Verfahren zur Messung der Aberration eines lithographischen Projektionssystems
|
US6600547B2
(en)
|
2001-09-24 |
2003-07-29 |
Nikon Corporation |
Sliding seal
|
US6801301B2
(en)
|
2001-10-12 |
2004-10-05 |
Canon Kabushiki Kaisha |
Exposure apparatus
|
EP1446703A2
(en)
*
|
2001-11-07 |
2004-08-18 |
Applied Materials, Inc. |
Optical spot grid array printer
|
US6842256B2
(en)
|
2001-11-15 |
2005-01-11 |
Zygo Corporation |
Compensating for effects of variations in gas refractivity in interferometers
|
JP2003158173A
(ja)
|
2001-11-20 |
2003-05-30 |
Oki Electric Ind Co Ltd |
ウェハホルダ
|
US7092069B2
(en)
|
2002-03-08 |
2006-08-15 |
Carl Zeiss Smt Ag |
Projection exposure method and projection exposure system
|
DE10210899A1
(de)
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
DE10229818A1
(de)
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
KR101013347B1
(ko)
|
2002-04-09 |
2011-02-10 |
가부시키가이샤 니콘 |
노광방법, 노광장치, 및 디바이스 제조방법
|
EP1353230A1
(en)
*
|
2002-04-12 |
2003-10-15 |
ASML Netherlands B.V. |
Device manufacturing method and computer programs
|
JP3958993B2
(ja)
|
2002-05-14 |
2007-08-15 |
東京エレクトロン株式会社 |
液処理装置および液処理方法
|
US7092231B2
(en)
|
2002-08-23 |
2006-08-15 |
Asml Netherlands B.V. |
Chuck, lithographic apparatus and device manufacturing method
|
CN100462844C
(zh)
|
2002-08-23 |
2009-02-18 |
株式会社尼康 |
投影光学***、微影方法、曝光装置及使用此装置的方法
|
US7383843B2
(en)
|
2002-09-30 |
2008-06-10 |
Lam Research Corporation |
Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
|
US7367345B1
(en)
|
2002-09-30 |
2008-05-06 |
Lam Research Corporation |
Apparatus and method for providing a confined liquid for immersion lithography
|
US6988326B2
(en)
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Phobic barrier meniscus separation and containment
|
US6954993B1
(en)
|
2002-09-30 |
2005-10-18 |
Lam Research Corporation |
Concentric proximity processing head
|
US7093375B2
(en)
|
2002-09-30 |
2006-08-22 |
Lam Research Corporation |
Apparatus and method for utilizing a meniscus in substrate processing
|
US6788477B2
(en)
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
SG121818A1
(en)
*
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
CN100568101C
(zh)
|
2002-11-12 |
2009-12-09 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
US9482966B2
(en)
|
2002-11-12 |
2016-11-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7110081B2
(en)
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7372541B2
(en)
|
2002-11-12 |
2008-05-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
CN101349876B
(zh)
|
2002-11-12 |
2010-12-01 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
DE10253679A1
(de)
|
2002-11-18 |
2004-06-03 |
Infineon Technologies Ag |
Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
TWI255971B
(en)
|
2002-11-29 |
2006-06-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
DE10257766A1
(de)
|
2002-12-10 |
2004-07-15 |
Carl Zeiss Smt Ag |
Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
|
AU2003289272A1
(en)
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Surface position detection apparatus, exposure method, and device porducing method
|
JP4232449B2
(ja)
|
2002-12-10 |
2009-03-04 |
株式会社ニコン |
露光方法、露光装置、及びデバイス製造方法
|
KR20120127755A
(ko)
|
2002-12-10 |
2012-11-23 |
가부시키가이샤 니콘 |
노광장치 및 디바이스 제조방법
|
KR101101737B1
(ko)
|
2002-12-10 |
2012-01-05 |
가부시키가이샤 니콘 |
노광장치 및 노광방법, 디바이스 제조방법
|
US6992750B2
(en)
|
2002-12-10 |
2006-01-31 |
Canon Kabushiki Kaisha |
Exposure apparatus and method
|
JP4179283B2
(ja)
|
2002-12-10 |
2008-11-12 |
株式会社ニコン |
光学素子及びその光学素子を用いた投影露光装置
|
WO2004053954A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
JP4352874B2
(ja)
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
CN101424883B
(zh)
|
2002-12-10 |
2013-05-15 |
株式会社尼康 |
曝光设备和器件制造法
|
JP4529433B2
(ja)
|
2002-12-10 |
2010-08-25 |
株式会社ニコン |
露光装置及び露光方法、デバイス製造方法
|
JP4645027B2
(ja)
*
|
2002-12-10 |
2011-03-09 |
株式会社ニコン |
露光装置及び露光方法、デバイス製造方法
|
EP1571694A4
(en)
|
2002-12-10 |
2008-10-15 |
Nikon Corp |
EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE
|
SG152063A1
(en)
|
2002-12-10 |
2009-05-29 |
Nikon Corp |
Exposure apparatus and method for producing device
|
WO2004053951A1
(ja)
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光方法及び露光装置並びにデバイス製造方法
|
CN100370533C
(zh)
|
2002-12-13 |
2008-02-20 |
皇家飞利浦电子股份有限公司 |
用于照射层的方法和用于将辐射导向层的装置
|
CN1316482C
(zh)
|
2002-12-19 |
2007-05-16 |
皇家飞利浦电子股份有限公司 |
照射层上斑点的方法和装置
|
US7010958B2
(en)
|
2002-12-19 |
2006-03-14 |
Asml Holding N.V. |
High-resolution gas gauge proximity sensor
|
JP4364806B2
(ja)
|
2002-12-19 |
2009-11-18 |
コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ |
層上にスポットを照射する方法及び装置
|
DE10261775A1
(de)
|
2002-12-20 |
2004-07-01 |
Carl Zeiss Smt Ag |
Vorrichtung zur optischen Vermessung eines Abbildungssystems
|
US7112727B2
(en)
|
2002-12-20 |
2006-09-26 |
Peotec Seeds S.R.L. |
Mutant allele of tomato
|
US6781670B2
(en)
|
2002-12-30 |
2004-08-24 |
Intel Corporation |
Immersion lithography
|
TWI247339B
(en)
|
2003-02-21 |
2006-01-11 |
Asml Holding Nv |
Lithographic printing with polarized light
|
US6943941B2
(en)
|
2003-02-27 |
2005-09-13 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US7206059B2
(en)
|
2003-02-27 |
2007-04-17 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
US7029832B2
(en)
|
2003-03-11 |
2006-04-18 |
Samsung Electronics Co., Ltd. |
Immersion lithography methods using carbon dioxide
|
US20050164522A1
(en)
|
2003-03-24 |
2005-07-28 |
Kunz Roderick R. |
Optical fluids, and systems and methods of making and using the same
|
KR20110104084A
(ko)
|
2003-04-09 |
2011-09-21 |
가부시키가이샤 니콘 |
액침 리소그래피 유체 제어 시스템
|
KR101364889B1
(ko)
|
2003-04-10 |
2014-02-19 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
|
JP4488005B2
(ja)
|
2003-04-10 |
2010-06-23 |
株式会社ニコン |
液浸リソグラフィ装置用の液体を捕集するための流出通路
|
EP1611486B1
(en)
|
2003-04-10 |
2016-03-16 |
Nikon Corporation |
Environmental system including a transport region for an immersion lithography apparatus
|
JP4656057B2
(ja)
|
2003-04-10 |
2011-03-23 |
株式会社ニコン |
液浸リソグラフィ装置用電気浸透素子
|
KR101861493B1
(ko)
|
2003-04-11 |
2018-05-28 |
가부시키가이샤 니콘 |
액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
|
JP4582089B2
(ja)
|
2003-04-11 |
2010-11-17 |
株式会社ニコン |
液浸リソグラフィ用の液体噴射回収システム
|
SG10201803122UA
(en)
|
2003-04-11 |
2018-06-28 |
Nikon Corp |
Immersion lithography apparatus and device manufacturing method
|
WO2004095135A2
(en)
|
2003-04-17 |
2004-11-04 |
Nikon Corporation |
Optical arrangement of autofocus elements for use with immersion lithography
|
JP4025683B2
(ja)
|
2003-05-09 |
2007-12-26 |
松下電器産業株式会社 |
パターン形成方法及び露光装置
|
JP4146755B2
(ja)
|
2003-05-09 |
2008-09-10 |
松下電器産業株式会社 |
パターン形成方法
|
TWI295414B
(en)
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
EP2270599A1
(en)
|
2003-05-13 |
2011-01-05 |
ASML Netherlands BV |
Lithographic apparatus
|
TWI474380B
(zh)
|
2003-05-23 |
2015-02-21 |
尼康股份有限公司 |
A method of manufacturing an exposure apparatus and an element
|
JP2005277363A
(ja)
*
|
2003-05-23 |
2005-10-06 |
Nikon Corp |
露光装置及びデバイス製造方法
|
EP1480065A3
(en)
|
2003-05-23 |
2006-05-10 |
Canon Kabushiki Kaisha |
Projection optical system, exposure apparatus, and device manufacturing method
|
JP5143331B2
(ja)
|
2003-05-28 |
2013-02-13 |
株式会社ニコン |
露光方法及び露光装置、並びにデバイス製造方法
|
KR101915914B1
(ko)
|
2003-05-28 |
2018-11-06 |
가부시키가이샤 니콘 |
노광 방법, 노광 장치, 및 디바이스 제조 방법
|
TWI442694B
(zh)
|
2003-05-30 |
2014-06-21 |
Asml Netherlands Bv |
微影裝置及元件製造方法
|
US7213963B2
(en)
|
2003-06-09 |
2007-05-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7317504B2
(en)
|
2004-04-08 |
2008-01-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP2261741A3
(en)
|
2003-06-11 |
2011-05-25 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP4054285B2
(ja)
|
2003-06-12 |
2008-02-27 |
松下電器産業株式会社 |
パターン形成方法
|
JP4084710B2
(ja)
|
2003-06-12 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
KR101940892B1
(ko)
|
2003-06-13 |
2019-01-21 |
가부시키가이샤 니콘 |
노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
|
KR101686762B1
(ko)
|
2003-06-19 |
2016-12-28 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조방법
|
US6867844B2
(en)
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
JP4084712B2
(ja)
|
2003-06-23 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
JP4029064B2
(ja)
|
2003-06-23 |
2008-01-09 |
松下電器産業株式会社 |
パターン形成方法
|
JP4343597B2
(ja)
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
JP2005019616A
(ja)
|
2003-06-25 |
2005-01-20 |
Canon Inc |
液浸式露光装置
|
US6809794B1
(en)
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
DE60308161T2
(de)
|
2003-06-27 |
2007-08-09 |
Asml Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
|
JP3862678B2
(ja)
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
EP1498778A1
(en)
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
EP1494074A1
(en)
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP2007527615A
(ja)
|
2003-07-01 |
2007-09-27 |
株式会社ニコン |
同位体特定流体の光学素子としての使用方法
|
WO2005010611A2
(en)
|
2003-07-08 |
2005-02-03 |
Nikon Corporation |
Wafer table for immersion lithography
|
US7738074B2
(en)
|
2003-07-16 |
2010-06-15 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7384149B2
(en)
|
2003-07-21 |
2008-06-10 |
Asml Netherlands B.V. |
Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
|
EP1500982A1
(en)
|
2003-07-24 |
2005-01-26 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7006209B2
(en)
|
2003-07-25 |
2006-02-28 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
EP3346485A1
(en)
|
2003-07-25 |
2018-07-11 |
Nikon Corporation |
Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
|
US7175968B2
(en)
|
2003-07-28 |
2007-02-13 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a substrate
|
EP1503244A1
(en)
|
2003-07-28 |
2005-02-02 |
ASML Netherlands B.V. |
Lithographic projection apparatus and device manufacturing method
|
US7326522B2
(en)
|
2004-02-11 |
2008-02-05 |
Asml Netherlands B.V. |
Device manufacturing method and a substrate
|
US7061578B2
(en)
|
2003-08-11 |
2006-06-13 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
US7579135B2
(en)
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
US7700267B2
(en)
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
US7085075B2
(en)
|
2003-08-12 |
2006-08-01 |
Carl Zeiss Smt Ag |
Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
|
US6844206B1
(en)
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
TWI263859B
(en)
|
2003-08-29 |
2006-10-11 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
US7070915B2
(en)
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
WO2005022616A1
(ja)
|
2003-08-29 |
2005-03-10 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
US6954256B2
(en)
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
US7014966B2
(en)
|
2003-09-02 |
2006-03-21 |
Advanced Micro Devices, Inc. |
Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
|
JP4288426B2
(ja)
|
2003-09-03 |
2009-07-01 |
株式会社ニコン |
液浸リソグラフィのための流体の供給装置及び方法
|
JP3870182B2
(ja)
|
2003-09-09 |
2007-01-17 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
US6961186B2
(en)
|
2003-09-26 |
2005-11-01 |
Takumi Technology Corp. |
Contact printing using a magnified mask image
|
KR101323396B1
(ko)
|
2003-09-29 |
2013-10-29 |
가부시키가이샤 니콘 |
노광장치, 노광방법 및 디바이스 제조방법
|
US7369217B2
(en)
|
2003-10-03 |
2008-05-06 |
Micronic Laser Systems Ab |
Method and device for immersion lithography
|
US7678527B2
(en)
|
2003-10-16 |
2010-03-16 |
Intel Corporation |
Methods and compositions for providing photoresist with improved properties for contacting liquids
|
WO2005050324A2
(en)
|
2003-11-05 |
2005-06-02 |
Dsm Ip Assets B.V. |
A method and apparatus for producing microchips
|
US7924397B2
(en)
|
2003-11-06 |
2011-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Anti-corrosion layer on objective lens for liquid immersion lithography applications
|
US8854602B2
(en)
|
2003-11-24 |
2014-10-07 |
Asml Netherlands B.V. |
Holding device for an optical element in an objective
|
US7545481B2
(en)
|
2003-11-24 |
2009-06-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7125652B2
(en)
|
2003-12-03 |
2006-10-24 |
Advanced Micro Devices, Inc. |
Immersion lithographic process using a conforming immersion medium
|
JP2005175016A
(ja)
|
2003-12-08 |
2005-06-30 |
Canon Inc |
基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
|
EP1697798A2
(en)
|
2003-12-15 |
2006-09-06 |
Carl Zeiss SMT AG |
Projection objective having a high aperture and a planar end surface
|
WO2005106589A1
(en)
|
2004-05-04 |
2005-11-10 |
Carl Zeiss Smt Ag |
Microlithographic projection exposure apparatus and immersion liquid therefore
|
EP1700163A1
(en)
|
2003-12-15 |
2006-09-13 |
Carl Zeiss SMT AG |
Objective as a microlithography projection objective with at least one liquid lens
|
US7460206B2
(en)
|
2003-12-19 |
2008-12-02 |
Carl Zeiss Smt Ag |
Projection objective for immersion lithography
|
US20050185269A1
(en)
|
2003-12-19 |
2005-08-25 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
WO2005059645A2
(en)
|
2003-12-19 |
2005-06-30 |
Carl Zeiss Smt Ag |
Microlithography projection objective with crystal elements
|
US7394521B2
(en)
|
2003-12-23 |
2008-07-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7589818B2
(en)
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
US7119884B2
(en)
|
2003-12-24 |
2006-10-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20050147920A1
(en)
|
2003-12-30 |
2005-07-07 |
Chia-Hui Lin |
Method and system for immersion lithography
|
US7088422B2
(en)
|
2003-12-31 |
2006-08-08 |
International Business Machines Corporation |
Moving lens for immersion optical lithography
|
JP4371822B2
(ja)
|
2004-01-06 |
2009-11-25 |
キヤノン株式会社 |
露光装置
|
JP4429023B2
(ja)
|
2004-01-07 |
2010-03-10 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
US20050153424A1
(en)
|
2004-01-08 |
2005-07-14 |
Derek Coon |
Fluid barrier with transparent areas for immersion lithography
|
KR101309242B1
(ko)
|
2004-01-14 |
2013-09-16 |
칼 짜이스 에스엠티 게엠베하 |
반사굴절식 투영 대물렌즈
|
KR101233879B1
(ko)
|
2004-01-16 |
2013-02-15 |
칼 짜이스 에스엠티 게엠베하 |
편광변조 광학소자
|
WO2005069078A1
(en)
|
2004-01-19 |
2005-07-28 |
Carl Zeiss Smt Ag |
Microlithographic projection exposure apparatus with immersion projection lens
|
CN1938646B
(zh)
|
2004-01-20 |
2010-12-15 |
卡尔蔡司Smt股份公司 |
曝光装置和用于投影透镜的测量装置
|
US7026259B2
(en)
|
2004-01-21 |
2006-04-11 |
International Business Machines Corporation |
Liquid-filled balloons for immersion lithography
|
US7391501B2
(en)
|
2004-01-22 |
2008-06-24 |
Intel Corporation |
Immersion liquids with siloxane polymer for immersion lithography
|
EP1723467A2
(en)
|
2004-02-03 |
2006-11-22 |
Rochester Institute of Technology |
Method of photolithography using a fluid and a system thereof
|
JP4018647B2
(ja)
|
2004-02-09 |
2007-12-05 |
キヤノン株式会社 |
投影露光装置およびデバイス製造方法
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
WO2005076084A1
(en)
|
2004-02-09 |
2005-08-18 |
Carl Zeiss Smt Ag |
Projection objective for a microlithographic projection exposure apparatus
|
EP1714192A1
(en)
|
2004-02-13 |
2006-10-25 |
Carl Zeiss SMT AG |
Projection objective for a microlithographic projection exposure apparatus
|
EP1721201A1
(en)
|
2004-02-18 |
2006-11-15 |
Corning Incorporated |
Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
|
US20050205108A1
(en)
|
2004-03-16 |
2005-09-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method and system for immersion lithography lens cleaning
|
US7027125B2
(en)
|
2004-03-25 |
2006-04-11 |
International Business Machines Corporation |
System and apparatus for photolithography
|
US7084960B2
(en)
|
2004-03-29 |
2006-08-01 |
Intel Corporation |
Lithography using controlled polarization
|
US7227619B2
(en)
|
2004-04-01 |
2007-06-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7034917B2
(en)
|
2004-04-01 |
2006-04-25 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and device manufactured thereby
|
US7295283B2
(en)
|
2004-04-02 |
2007-11-13 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US20050226737A1
(en)
|
2004-04-07 |
2005-10-13 |
Sauer-Danfoss, Inc. |
Axial piston hydraulic power unit with pseudo slippers
|
US7712905B2
(en)
|
2004-04-08 |
2010-05-11 |
Carl Zeiss Smt Ag |
Imaging system with mirror group
|
US7898642B2
(en)
|
2004-04-14 |
2011-03-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7271878B2
(en)
|
2004-04-22 |
2007-09-18 |
International Business Machines Corporation |
Wafer cell for immersion lithography
|
US7244665B2
(en)
|
2004-04-29 |
2007-07-17 |
Micron Technology, Inc. |
Wafer edge ring structures and methods of formation
|
US7379159B2
(en)
|
2004-05-03 |
2008-05-27 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US8054448B2
(en)
|
2004-05-04 |
2011-11-08 |
Nikon Corporation |
Apparatus and method for providing fluid for immersion lithography
|
US7091502B2
(en)
|
2004-05-12 |
2006-08-15 |
Taiwan Semiconductor Manufacturing, Co., Ltd. |
Apparatus and method for immersion lithography
|
US8107162B2
(en)
|
2004-05-17 |
2012-01-31 |
Carl Zeiss Smt Gmbh |
Catadioptric projection objective with intermediate images
|
US7616383B2
(en)
|
2004-05-18 |
2009-11-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7486381B2
(en)
|
2004-05-21 |
2009-02-03 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
KR101257960B1
(ko)
|
2004-06-04 |
2013-04-24 |
칼 짜이스 에스엠테 게엠베하 |
광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템
|
US8605257B2
(en)
|
2004-06-04 |
2013-12-10 |
Carl Zeiss Smt Gmbh |
Projection system with compensation of intensity variations and compensation element therefor
|
CN103558737A
(zh)
|
2004-06-09 |
2014-02-05 |
尼康股份有限公司 |
基板保持装置、具备其之曝光装置、方法
|
US7411657B2
(en)
*
|
2004-11-17 |
2008-08-12 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
US7317506B2
(en)
|
2005-03-29 |
2008-01-08 |
Asml Netherlands B.V. |
Variable illumination source
|
US7420194B2
(en)
|
2005-12-27 |
2008-09-02 |
Asml Netherlands B.V. |
Lithographic apparatus and substrate edge seal
|
US7760324B2
(en)
|
2006-03-20 |
2010-07-20 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
NL1036835A1
(nl)
|
2008-05-08 |
2009-11-11 |
Asml Netherlands Bv |
Lithographic Apparatus and Method.
|
JP1628330S
(ja)
|
2018-06-22 |
2019-04-01 |
|
|