SG11202111451WA - Methods for growing a single crystal silicon ingot using continuous czochralski method - Google Patents

Methods for growing a single crystal silicon ingot using continuous czochralski method

Info

Publication number
SG11202111451WA
SG11202111451WA SG11202111451WA SG11202111451WA SG11202111451WA SG 11202111451W A SG11202111451W A SG 11202111451WA SG 11202111451W A SG11202111451W A SG 11202111451WA SG 11202111451W A SG11202111451W A SG 11202111451WA SG 11202111451W A SG11202111451W A SG 11202111451WA
Authority
SG
Singapore
Prior art keywords
growing
methods
single crystal
crystal silicon
silicon ingot
Prior art date
Application number
SG11202111451WA
Other languages
English (en)
Inventor
Carissima Hudson
Jaewoo Ryu
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Publication of SG11202111451WA publication Critical patent/SG11202111451WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11202111451WA 2019-04-18 2020-04-13 Methods for growing a single crystal silicon ingot using continuous czochralski method SG11202111451WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962835735P 2019-04-18 2019-04-18
PCT/US2020/027953 WO2020214531A1 (en) 2019-04-18 2020-04-13 Methods for growing a single crystal silicon ingot using continuous czochralski method

Publications (1)

Publication Number Publication Date
SG11202111451WA true SG11202111451WA (en) 2021-11-29

Family

ID=70465569

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202111451WA SG11202111451WA (en) 2019-04-18 2020-04-13 Methods for growing a single crystal silicon ingot using continuous czochralski method

Country Status (8)

Country Link
US (1) US11408090B2 (ko)
EP (1) EP3956499B1 (ko)
JP (1) JP2022529451A (ko)
KR (1) KR102576552B1 (ko)
CN (1) CN113728129A (ko)
SG (1) SG11202111451WA (ko)
TW (1) TWI821556B (ko)
WO (1) WO2020214531A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11767611B2 (en) * 2020-07-24 2023-09-26 Globalwafers Co., Ltd. Methods for producing a monocrystalline ingot by horizontal magnetic field Czochralski
US20220349087A1 (en) * 2021-04-28 2022-11-03 Globalwafers Co., Ltd. Methods for producing silicon ingots by horizontal magnetic field czochralski

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104026A (en) 1976-03-12 1978-08-01 University Of Virginia Immunoassay separation technique
DE3049376A1 (de) 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
JPH0733305B2 (ja) 1987-03-20 1995-04-12 三菱マテリアル株式会社 石英製二重ルツボの製造方法
JPH0633218B2 (ja) 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
US4943160A (en) * 1988-07-25 1990-07-24 Massachusetts Institute Of Technology Interface angle estimation system
US5139750A (en) 1989-10-16 1992-08-18 Nkk Corporation Silicon single crystal manufacturing apparatus
JPH04317493A (ja) 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
TW440613B (en) 1996-01-11 2001-06-16 Mitsubishi Material Silicon Method for pulling single crystal
JP3769800B2 (ja) 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
DE19637182A1 (de) 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
DE69801903T2 (de) 1997-04-09 2002-03-28 Memc Electronic Materials Freistellenbeherrschendes silicium mit niedriger fehlerdichte
JP4510948B2 (ja) * 1998-03-25 2010-07-28 シルトロニック・ジャパン株式会社 シリコン単結晶ウェ―ハの製造方法
US6077343A (en) 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
KR20010041957A (ko) 1998-06-26 2001-05-25 헨넬리 헬렌 에프 임의인 대 직경의 무결함 실리콘 결정의 성장 공정
WO2000022196A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
JP3601324B2 (ja) 1998-11-19 2004-12-15 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
DE60010496T2 (de) 1999-09-23 2005-04-07 Memc Electronic Materials, Inc. Czochralski-Verfahren zur Herstellung Silizium-Einkristalle durch Steuerung der Abkühlgeschwindigkeit
JP2001089294A (ja) 1999-09-27 2001-04-03 Mitsubishi Materials Silicon Corp 点欠陥の凝集体が存在しないシリコン単結晶の連続引上げ法
JP3994602B2 (ja) 1999-11-12 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびその製造方法並びにｓｏｉウエーハ
JP4718668B2 (ja) 2000-06-26 2011-07-06 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
EP1346086A2 (en) * 2000-11-30 2003-09-24 MEMC Electronic Materials, Inc. Process for controlling thermal history of vacancy-dominated, single crystal silicon
EP1688519A3 (en) * 2001-01-26 2007-10-17 MEMC Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
JP2005015313A (ja) * 2003-06-27 2005-01-20 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶
JP4407192B2 (ja) * 2003-07-29 2010-02-03 信越半導体株式会社 単結晶の製造方法
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
JP2005162599A (ja) * 2003-12-03 2005-06-23 Siltron Inc 均一なベイカンシ欠陥を有するシリコン単結晶インゴット、シリコンウエハ、シリコン単結晶インゴットの製造装置、及びシリコン単結晶インゴットの製造方法
JP2007022863A (ja) 2005-07-19 2007-02-01 Sumco Corp シリコン単結晶の育成方法およびシリコンウェーハの製造方法
JP4483729B2 (ja) * 2005-07-25 2010-06-16 株式会社Ｓｕｍｃｏ シリコン単結晶製造方法
EP2027312B1 (en) 2006-05-19 2015-02-18 MEMC Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
FR2929960B1 (fr) 2008-04-11 2011-05-13 Apollon Solar Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes
KR20110052605A (ko) * 2008-08-07 2011-05-18 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 시변 자기장의 인가에 의한 실리콘 용융체 내의 펌핑력의 생성
CN103249875B (zh) 2010-09-03 2016-10-12 Gtatip控股有限责任公司 镓、铟、或铝掺杂单晶硅
CN103608496B (zh) 2011-04-14 2017-12-26 Gtat Ip控股有限责任公司 具有均匀多重掺杂物的硅锭及其制造方法和装置
WO2012145250A2 (en) * 2011-04-20 2012-10-26 GT Advanced CZ, LLC Side feed system for czochralski growth of silicon ingots
CN102260900B (zh) 2011-07-14 2013-11-27 西安华晶电子技术股份有限公司 提高单晶硅纵向电阻率一致性的装置及其处理工艺
JP5470349B2 (ja) 2011-10-17 2014-04-16 ジルトロニック アクチエンゲゼルシャフト ｐ型シリコン単結晶およびその製造方法
DE102012214085B4 (de) 2012-08-08 2016-07-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung
US20140144371A1 (en) * 2012-11-29 2014-05-29 Solaicx, Inc. Heat Shield For Improved Continuous Czochralski Process
KR20150103703A (ko) 2012-12-31 2015-09-11 엠이엠씨 일렉트로닉 머티리얼스 쏘시에떼 퍼 아찌오니 인듐 도핑된 실리콘 웨이퍼 및 이를 사용한 태양 전지
CN104711674B (zh) * 2013-12-09 2017-06-06 有研半导体材料有限公司 一种减少直拉单晶硅内部微气孔密度的方法
KR20150107241A (ko) * 2014-03-13 2015-09-23 (주)기술과가치 잉곳 제조 방법 및 잉곳 제조 장치
JP6222013B2 (ja) 2014-08-29 2017-11-01 信越半導体株式会社 抵抗率制御方法
KR101680213B1 (ko) * 2015-04-06 2016-11-28 주식회사 엘지실트론 실리콘 단결정 잉곳의 성장 방법
CN105887194A (zh) 2016-05-30 2016-08-24 上海超硅半导体有限公司 一种n型单晶硅的生长方法

Also Published As

Publication number Publication date
KR102576552B1 (ko) 2023-09-07
WO2020214531A1 (en) 2020-10-22
CN113728129A (zh) 2021-11-30
TW202104678A (zh) 2021-02-01
JP2022529451A (ja) 2022-06-22
US11408090B2 (en) 2022-08-09
US20200332439A1 (en) 2020-10-22
KR20210154193A (ko) 2021-12-20
EP3956499B1 (en) 2023-11-29
EP3956499A1 (en) 2022-02-23
TWI821556B (zh) 2023-11-11

Similar Documents

Publication Publication Date Title
EP3561158A4 (en) PROCESS FOR CULTURING A LARGE DIAMETER MONOCCRYSTALLINE SILICON CARBIDE INGOT
EP3330415A4 (en) PROCESS FOR PREPARING AN EPITACTIC SILICON CARBIDE CRYSTAL WAFERS
EP2405038A4 (en) MIRROR, DEVICE AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS
EP2642001A4 (en) PROCESS FOR PREPARING AN EPITACTIC SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
EP3260582A4 (en) Method for producing silicon carbide single crystal ingot and silicon carbide single crystal ingot
WO2013025024A3 (en) Ingot growing apparatus and method of manufacturing ingot
EP3026147A4 (en) SILICON CARBIDE MONOCRYSTAL WAFER AND PROCESS FOR PRODUCING MONOCRYSTAL SILICON CARBIDE INGOT
EP2699716A4 (en) LATERAL SUPPLY SYSTEM FOR GROWING SILICON INGOTS BY THE CZOCHRALSKI PROCESS
SG11202111451WA (en) Methods for growing a single crystal silicon ingot using continuous czochralski method
DE112008000893B8 (de) Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot
EP4108814A4 (en) PROCESS FOR PREPARING LARGE MONOCRYSTAL
EP3760767A4 (en) BLOCK FURNACE FOR DIRECTED Solidification GROWTH OF CRYSTALLINE SILICON AND APPLICATION
EP3260581A4 (en) Method for producing silicon carbide single crystal epitaxial wafer and silicon carbide single crystal epitaxial wafer
EP4012078A4 (en) SEED CRYSTAL SEED OF SIC AND PRODUCTION METHOD THEREFOR, SIC INGOT PRODUCED BY GROWING SAID SEED CRYSTAL SEED OF SIC AND PRODUCTION METHOD THEREFOR, AND SIC WAFER PRODUCED FROM SAID SIC INGOT AND EPITAXIAL FILM SIC WAFER AND METHODS RESPECTIVE PRODUCTION RESPECTS OF SAID SIC WAFER AND SAID EPITAXIAL FILM SIC WAFER
SG11201401557UA (en) Crucible and method for the production of a (near) monocrystalline semiconductor ingot
EP3763853A4 (en) SILICON CARBIDE MONOCRISTAL PRODUCTION PROCESS
ZA202109413B (en) Method for splicing growth of large-size monocrystal diamond
EP3978657A4 (en) GERMANIUM SINGLE CRYSTAL WAFER, METHOD OF MAKING A GERMANIUM SINGLE CRYSTAL WAFER, METHOD OF MAKING A CRYSTAL ROD AND USE OF A SINGLE CRYSTAL WAFER
EP3812488A4 (en) DEVICE FOR GROWING A SINGLE CRYSTAL OF SILICON CARBIDE AND METHOD FOR PRODUCTION OF A SINGLE CRYSTAL OF SILICON CARBIDE
EP4008811C0 (de) Verfahren zur herstellung eines einkristalls in einem wachstumstiegel
EP3690085A4 (en) PROCESS FOR THE PRODUCTION OF A SINGLE CRYSTAL OF SILICON CARBIDE
SG11202103680RA (en) Apparatus for pulling a single crystal of semiconductor material by the cz method from a melt and method using the apparatus
WO2016117847A3 (ko) 단결정 잉곳의 직경 제어 시스템 및 제어 방법
EP4056739C0 (en) METHOD FOR GROWING HIGH QUALITY SINGLE CRYSTAL SILICON CARBIDE
EP2657375A4 (en) SEED MATERIAL FOR LIQUID PHASE PITAXISM OF MONOCRYSTALLINE SILICON CARBIDE AND METHOD FOR THE LIQUID PHASE PITAXY OF MONOCRYSTALLINE SILICON CARBIDE