WO2016117847A3 - 단결정 잉곳의 직경 제어 시스템 및 제어 방법 - Google Patents

단결정 잉곳의 직경 제어 시스템 및 제어 방법 Download PDF

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Publication number
WO2016117847A3
WO2016117847A3 PCT/KR2015/014588 KR2015014588W WO2016117847A3 WO 2016117847 A3 WO2016117847 A3 WO 2016117847A3 KR 2015014588 W KR2015014588 W KR 2015014588W WO 2016117847 A3 WO2016117847 A3 WO 2016117847A3
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WO
WIPO (PCT)
Prior art keywords
seed
silicon ingot
diameter
single crystal
seed chuck
Prior art date
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PCT/KR2015/014588
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English (en)
French (fr)
Other versions
WO2016117847A2 (ko
Inventor
김윤구
나광하
안윤하
Original Assignee
주식회사 엘지실트론
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Application filed by 주식회사 엘지실트론 filed Critical 주식회사 엘지실트론
Priority to JP2017538404A priority Critical patent/JP6553194B2/ja
Priority to CN201580074232.4A priority patent/CN107208307B/zh
Priority to EP15879101.2A priority patent/EP3249082B1/en
Priority to US15/544,501 priority patent/US10385472B2/en
Publication of WO2016117847A2 publication Critical patent/WO2016117847A2/ko
Publication of WO2016117847A3 publication Critical patent/WO2016117847A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명의 실시예는 초크랄스키법에 의한 실리콘 잉곳의 성장시 실리콘 잉곳의 직경 편차를 제어하는 시스템으로서, 종결정인 시드와 결합되며 성장되는 실리콘 잉곳을 지지하는 시드척; 상기 시드척 상면과 케이블로 연결되어 상기 시드척에 가해지는 부하를 측정하는 측정부; 상기 시드척이 케이블과 연결된 상태에서 상기 시드척의 위치를 상하부로 이동시켜 실리콘 잉곳에 가해지는 부하를 변경하는 부하 조절부; 및 상기 측정부에서 측정된 부하값에 따라 상기 부하 조절부를 구동시켜 실리콘 잉곳에 가해지는 부하를 제어하는 제어부를 포함할 수 있다. 따라서, 단결정 잉곳의 성장 공정을 진행하는 도중 시드의 흔들림이 방지되어, 성장하는 단결정 잉곳의 직경 편차를 감소시킬 수 있다.
PCT/KR2015/014588 2015-01-21 2015-12-31 단결정 잉곳의 직경 제어 시스템 및 제어 방법 WO2016117847A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017538404A JP6553194B2 (ja) 2015-01-21 2015-12-31 単結晶インゴットの直径制御システム及び制御方法
CN201580074232.4A CN107208307B (zh) 2015-01-21 2015-12-31 单晶锭直径的控制***及控制方法
EP15879101.2A EP3249082B1 (en) 2015-01-21 2015-12-31 Control system for diameter of single crystal ingot
US15/544,501 US10385472B2 (en) 2015-01-21 2015-12-31 Control system and control method for diameter of single crystal ingot

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150009976A KR101674287B1 (ko) 2015-01-21 2015-01-21 단결정 잉곳의 직경 제어 시스템 및 제어 방법
KR10-2015-0009976 2015-01-21

Publications (2)

Publication Number Publication Date
WO2016117847A2 WO2016117847A2 (ko) 2016-07-28
WO2016117847A3 true WO2016117847A3 (ko) 2016-09-15

Family

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PCT/KR2015/014588 WO2016117847A2 (ko) 2015-01-21 2015-12-31 단결정 잉곳의 직경 제어 시스템 및 제어 방법

Country Status (6)

Country Link
US (1) US10385472B2 (ko)
EP (1) EP3249082B1 (ko)
JP (1) JP6553194B2 (ko)
KR (1) KR101674287B1 (ko)
CN (1) CN107208307B (ko)
WO (1) WO2016117847A2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200002838A1 (en) * 2018-06-28 2020-01-02 Global Wafers Co., Ltd. Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rate
US11414778B2 (en) * 2019-07-29 2022-08-16 Globalwafers Co., Ltd. Production and use of dynamic state charts when growing a single crystal silicon ingot
CN111041551B (zh) * 2020-01-06 2021-02-05 北京北方华创真空技术有限公司 直拉硅单晶炉
CN114059151B (zh) * 2021-11-18 2022-08-02 深圳市毫欧电子有限公司 一种用于发热电子元件制备用拉晶装置
CN114481318A (zh) * 2022-02-14 2022-05-13 北京青禾晶元半导体科技有限责任公司 一种碳化硅晶体生长的控制方法及装置

Citations (5)

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JPH07172980A (ja) * 1993-12-20 1995-07-11 Komatsu Electron Metals Co Ltd 半導体単結晶製造装置
JPH09175893A (ja) * 1995-12-25 1997-07-08 Shin Etsu Handotai Co Ltd 引上げ結晶重量測定装置
JPH09286693A (ja) * 1996-04-22 1997-11-04 Komatsu Electron Metals Co Ltd 半導体単結晶製造装置
KR20000068909A (ko) * 1997-09-05 2000-11-25 모리 레이지로 단결정 인양장치 및 단결정 인양방법
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Publication number Priority date Publication date Assignee Title
JPH07172980A (ja) * 1993-12-20 1995-07-11 Komatsu Electron Metals Co Ltd 半導体単結晶製造装置
JPH09175893A (ja) * 1995-12-25 1997-07-08 Shin Etsu Handotai Co Ltd 引上げ結晶重量測定装置
JPH09286693A (ja) * 1996-04-22 1997-11-04 Komatsu Electron Metals Co Ltd 半導体単結晶製造装置
KR20000068909A (ko) * 1997-09-05 2000-11-25 모리 레이지로 단결정 인양장치 및 단결정 인양방법
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Also Published As

Publication number Publication date
EP3249082A4 (en) 2018-10-31
JP2018504354A (ja) 2018-02-15
CN107208307B (zh) 2020-04-28
KR20160090099A (ko) 2016-07-29
WO2016117847A2 (ko) 2016-07-28
JP6553194B2 (ja) 2019-07-31
CN107208307A (zh) 2017-09-26
EP3249082B1 (en) 2021-03-03
US10385472B2 (en) 2019-08-20
US20180171507A1 (en) 2018-06-21
KR101674287B1 (ko) 2016-11-08
EP3249082A2 (en) 2017-11-29

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