SG11202101302TA - Sputtering target, magnetic film, and perpendicular magnetic recording medium - Google Patents

Sputtering target, magnetic film, and perpendicular magnetic recording medium

Info

Publication number
SG11202101302TA
SG11202101302TA SG11202101302TA SG11202101302TA SG11202101302TA SG 11202101302T A SG11202101302T A SG 11202101302TA SG 11202101302T A SG11202101302T A SG 11202101302TA SG 11202101302T A SG11202101302T A SG 11202101302TA SG 11202101302T A SG11202101302T A SG 11202101302TA
Authority
SG
Singapore
Prior art keywords
recording medium
sputtering target
magnetic recording
magnetic film
perpendicular magnetic
Prior art date
Application number
SG11202101302TA
Other languages
English (en)
Inventor
Manami Masuda
Masayoshi Shimizu
Yasuyuki Iwabuchi
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11202101302TA publication Critical patent/SG11202101302TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/656—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
    • G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
    • G11B5/706—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
    • G11B5/70605—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
    • H01F1/10—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites, e.g. [(Ba,Sr)O(Fe2O3)6] ferrites with hexagonal structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/405—Iron group metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/408—Noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
SG11202101302TA 2018-08-09 2019-05-23 Sputtering target, magnetic film, and perpendicular magnetic recording medium SG11202101302TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018150675 2018-08-09
PCT/JP2019/020556 WO2020031460A1 (fr) 2018-08-09 2019-05-23 Cible de pulvérisation, film magnétique et support d'enregistrement magnétique perpendiculaire

Publications (1)

Publication Number Publication Date
SG11202101302TA true SG11202101302TA (en) 2021-03-30

Family

ID=69414607

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202101302TA SG11202101302TA (en) 2018-08-09 2019-05-23 Sputtering target, magnetic film, and perpendicular magnetic recording medium

Country Status (6)

Country Link
US (2) US11618944B2 (fr)
JP (1) JP7076555B2 (fr)
CN (1) CN112585295B (fr)
SG (1) SG11202101302TA (fr)
TW (1) TWI780331B (fr)
WO (1) WO2020031460A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727322B (zh) * 2018-08-09 2021-05-11 日商Ｊｘ金屬股份有限公司 濺鍍靶及磁性膜

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60228637A (ja) * 1984-04-25 1985-11-13 Toshiba Corp 磁気記録媒体用Ｃｏ基合金
JP3259844B2 (ja) * 1990-03-27 2002-02-25 株式会社豊田中央研究所 異方性ナノ複合材料およびその製造方法
JPH04218906A (ja) * 1990-03-29 1992-08-10 Mitsui Petrochem Ind Ltd 光磁気記録媒体
JPH05275233A (ja) * 1992-03-30 1993-10-22 Toshiba Corp 軟磁性薄膜
JP2001256631A (ja) * 2000-01-05 2001-09-21 Naruse Atsushi 磁気記録媒体およびその製造方法
JP2002358616A (ja) * 2000-06-12 2002-12-13 Toshiba Corp 磁気記録媒体および磁気記録装置
JP4221484B2 (ja) * 2003-09-09 2009-02-12 Ｄｏｗａエレクトロニクス株式会社 金属磁性粉末およびその製造法
JP2006155861A (ja) * 2004-10-29 2006-06-15 Showa Denko Kk 垂直磁気記録媒体及びその製造方法並びに磁気記録再生装置
KR101494250B1 (ko) 2006-08-21 2015-02-17 인터디지탈 테크날러지 코포레이션 Ｌｔｅ에서의 가변 데이터율 서비스를 위한 동적 자원 할당, 스케쥴링 및 시그널링
JP2009087501A (ja) * 2007-10-03 2009-04-23 Showa Denko Kk 垂直磁気記録媒体および磁気記録再生装置
JP2011081873A (ja) 2009-10-07 2011-04-21 Ulvac Japan Ltd 垂直磁気記録媒体用記録層、垂直磁気記録媒体、及び強磁性金属膜の作製方法
JP2011174174A (ja) 2010-01-26 2011-09-08 Mitsubishi Materials Corp 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP2011175725A (ja) 2010-01-26 2011-09-08 Mitsubishi Materials Corp 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP5375707B2 (ja) 2010-03-28 2013-12-25 三菱マテリアル株式会社 磁気記録膜形成用スパッタリングターゲットおよびその製造方法
CN103038388B (zh) 2010-09-03 2015-04-01 吉坤日矿日石金属株式会社 强磁性材料溅射靶
JP2012117147A (ja) 2010-11-12 2012-06-21 Jx Nippon Mining & Metals Corp コバルト酸化物が残留したスパッタリングターゲット
MY156203A (en) 2010-12-22 2016-01-29 Jx Nippon Mining & Metals Corp Sintered compact sputtering target
WO2014141737A1 (fr) * 2013-03-12 2014-09-18 Jx日鉱日石金属株式会社 Cible de pulvérisation
CN105934532B (zh) 2013-10-29 2019-09-20 田中贵金属工业株式会社 磁控溅射用靶
JP6260517B2 (ja) * 2014-11-20 2018-01-17 富士電機株式会社 磁気記録媒体およびその製造方法
JP6284126B2 (ja) * 2014-12-15 2018-02-28 昭和電工株式会社 垂直記録媒体、垂直記録再生装置
JP6042520B1 (ja) * 2015-11-05 2016-12-14 デクセリアルズ株式会社 Ｍｎ−Ｚｎ−Ｏ系スパッタリングターゲット及びその製造方法
CN109923610B (zh) * 2016-11-01 2021-01-29 田中贵金属工业株式会社 磁记录介质用溅射靶

Also Published As

Publication number Publication date
TW202009311A (zh) 2020-03-01
US20210310114A1 (en) 2021-10-07
JPWO2020031460A1 (ja) 2021-10-07
US11618944B2 (en) 2023-04-04
US20230227964A1 (en) 2023-07-20
US11939663B2 (en) 2024-03-26
CN112585295B (zh) 2023-04-04
CN112585295A (zh) 2021-03-30
WO2020031460A1 (fr) 2020-02-13
JP7076555B2 (ja) 2022-05-27
TWI780331B (zh) 2022-10-11

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