SG11201912232WA - Etching method and plasma etching material - Google Patents
Etching method and plasma etching materialInfo
- Publication number
- SG11201912232WA SG11201912232WA SG11201912232WA SG11201912232WA SG11201912232WA SG 11201912232W A SG11201912232W A SG 11201912232WA SG 11201912232W A SG11201912232W A SG 11201912232WA SG 11201912232W A SG11201912232W A SG 11201912232WA SG 11201912232W A SG11201912232W A SG 11201912232WA
- Authority
- SG
- Singapore
- Prior art keywords
- etching
- plasma
- plasma etching
- etching method
- etching material
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000001020 plasma etching Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017125070A JP6896522B2 (en) | 2017-06-27 | 2017-06-27 | Etching method and materials for plasma etching |
| PCT/EP2018/066486 WO2019002058A1 (en) | 2017-06-27 | 2018-06-20 | Etching method and plasma etching material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201912232WA true SG11201912232WA (en) | 2020-01-30 |
Family
ID=62948071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201912232WA SG11201912232WA (en) | 2017-06-27 | 2018-06-20 | Etching method and plasma etching material |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP6896522B2 (en) |
| KR (1) | KR102563633B1 (en) |
| CN (1) | CN110832623B (en) |
| SG (1) | SG11201912232WA (en) |
| TW (1) | TWI749216B (en) |
| WO (1) | WO2019002058A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102244862B1 (en) * | 2020-08-04 | 2021-04-27 | (주)원익머트리얼즈 | Etch gas mixture and pattern formation method using the same |
| KR102244885B1 (en) * | 2021-02-03 | 2021-04-27 | (주)원익머트리얼즈 | Etch gas mixture with high selectivity and pattern formation method using the same |
| KR102489934B1 (en) * | 2021-02-17 | 2023-01-18 | 대전대학교 산학협력단 | Etching treatment device and etching treatment method |
| US20230094212A1 (en) * | 2021-09-30 | 2023-03-30 | Tokyo Electron Limited | Plasma etch process for fabricating high aspect ratio (har) features |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163476A (en) * | 1992-11-18 | 1994-06-10 | Sony Corp | Dry etching method |
| US5626775A (en) * | 1996-05-13 | 1997-05-06 | Air Products And Chemicals, Inc. | Plasma etch with trifluoroacetic acid and derivatives |
| IL119598A0 (en) * | 1995-11-17 | 1997-02-18 | Air Prod & Chem | Plasma etch with trifluoroacetic acid or its derivatives |
| JP4095246B2 (en) * | 1997-07-22 | 2008-06-04 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
| TW428045B (en) * | 1997-08-20 | 2001-04-01 | Air Liquide Electronics Chemic | Plasma cleaning and etching methods using non-global-warming compounds |
| JPH11124386A (en) * | 1997-10-17 | 1999-05-11 | Asahi Denka Kogyo Kk | Stabilization of trimethoxysilane |
| US20050011859A1 (en) * | 2003-07-15 | 2005-01-20 | Bing Ji | Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications |
| US20050241671A1 (en) * | 2004-04-29 | 2005-11-03 | Dong Chun C | Method for removing a substance from a substrate using electron attachment |
| JP2006128245A (en) * | 2004-10-27 | 2006-05-18 | Sony Corp | Method of processing insulating film |
| JP6257638B2 (en) * | 2012-10-30 | 2018-01-10 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Fluorocarbon molecules for high aspect ratio oxide etching |
| JP6327295B2 (en) * | 2015-08-12 | 2018-05-23 | セントラル硝子株式会社 | Dry etching method |
-
2017
- 2017-06-27 JP JP2017125070A patent/JP6896522B2/en active Active
-
2018
- 2018-04-20 TW TW107113536A patent/TWI749216B/en active
- 2018-06-20 SG SG11201912232WA patent/SG11201912232WA/en unknown
- 2018-06-20 CN CN201880041923.8A patent/CN110832623B/en active Active
- 2018-06-20 KR KR1020207001019A patent/KR102563633B1/en active IP Right Grant
- 2018-06-20 WO PCT/EP2018/066486 patent/WO2019002058A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200018627A (en) | 2020-02-19 |
| WO2019002058A1 (en) | 2019-01-03 |
| CN110832623A (en) | 2020-02-21 |
| JP2019009335A (en) | 2019-01-17 |
| JP6896522B2 (en) | 2021-06-30 |
| TW201906004A (en) | 2019-02-01 |
| TWI749216B (en) | 2021-12-11 |
| CN110832623B (en) | 2024-01-19 |
| KR102563633B1 (en) | 2023-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG10201610044VA (en) | Plasma etching method | |
| SG10201702290WA (en) | Plasma Processing Method | |
| SG11201913310RA (en) | Etching method and etching device | |
| SG11202005088WA (en) | Plasma processing apparatus and methods | |
| SG11201709189VA (en) | Plasma resistant coating film and fabricating method thereof | |
| SG10201510372PA (en) | Etching Method And Etching Apparatus | |
| SG11201609143TA (en) | Plasma processing method and plasma processing apparatus | |
| SG11201703122PA (en) | Plasma etching method | |
| EP3206223A4 (en) | Plasma processing method and plasma processing apparatus | |
| SG10201702291PA (en) | Plasma Processing Method | |
| EP3382452A4 (en) | Resist-pattern formation method and resist material | |
| SG11201912232WA (en) | Etching method and plasma etching material | |
| EP3514249A4 (en) | Metal mask material and method for manufacturing same | |
| GB201521822D0 (en) | Devices and method of operation thereof | |
| EP3524977A4 (en) | Plasma separation device and plasma separation method | |
| IL295424B1 (en) | Plasma source and a method for manufacturing thereof | |
| GB201708927D0 (en) | Methods of plasma etching and plasma dicing | |
| EP3318686A4 (en) | Vacuum insulating material providing assembly and vacuum insulating material providing method using same | |
| EP3257969A4 (en) | Etching liquid and etching method | |
| SG10201510131WA (en) | Plasma Etching Method | |
| HUE056818T2 (en) | Plasma spray apparatus and method | |
| SG11202004968SA (en) | Plasma etching method and plasma etching apparatus | |
| EP3506335A4 (en) | Plasma etching method | |
| EP3432345A4 (en) | Plasma etching method | |
| EP3328613A4 (en) | Material and method for 3-d fabrication |