SG10201510372PA - Etching Method And Etching Apparatus - Google Patents

Etching Method And Etching Apparatus

Info

Publication number
SG10201510372PA
SG10201510372PA SG10201510372PA SG10201510372PA SG10201510372PA SG 10201510372P A SG10201510372P A SG 10201510372PA SG 10201510372P A SG10201510372P A SG 10201510372PA SG 10201510372P A SG10201510372P A SG 10201510372PA SG 10201510372P A SG10201510372P A SG 10201510372PA
Authority
SG
Singapore
Prior art keywords
etching
etching method
etching apparatus
Prior art date
Application number
SG10201510372PA
Inventor
Takeda Ryohei
Takashima Ryuichi
Ooya Yoshinobu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201510372PA publication Critical patent/SG10201510372PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Plasma Technology (AREA)
SG10201510372PA 2014-12-25 2015-12-17 Etching Method And Etching Apparatus SG10201510372PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014262859A JP6408903B2 (en) 2014-12-25 2014-12-25 Etching processing method and etching processing apparatus

Publications (1)

Publication Number Publication Date
SG10201510372PA true SG10201510372PA (en) 2016-07-28

Family

ID=56165053

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201510372PA SG10201510372PA (en) 2014-12-25 2015-12-17 Etching Method And Etching Apparatus

Country Status (6)

Country Link
US (1) US9659789B2 (en)
JP (1) JP6408903B2 (en)
KR (1) KR102033979B1 (en)
CN (1) CN105742148B (en)
SG (1) SG10201510372PA (en)
TW (1) TWI710021B (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9922806B2 (en) * 2015-06-23 2018-03-20 Tokyo Electron Limited Etching method and plasma processing apparatus
US9997374B2 (en) * 2015-12-18 2018-06-12 Tokyo Electron Limited Etching method
JP6568822B2 (en) * 2016-05-16 2019-08-28 東京エレクトロン株式会社 Etching method
JP6820206B2 (en) * 2017-01-24 2021-01-27 東京エレクトロン株式会社 How to process the work piece
JP6832171B2 (en) * 2017-01-24 2021-02-24 東京エレクトロン株式会社 Plasma processing method including cleaning of the inside of the chamber body of the plasma processing device
JP6948181B2 (en) 2017-08-01 2021-10-13 東京エレクトロン株式会社 How to etch a multilayer film
US10811267B2 (en) * 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems
US10766057B2 (en) 2017-12-28 2020-09-08 Micron Technology, Inc. Components and systems for cleaning a tool for forming a semiconductor device, and related methods
KR20190098922A (en) 2018-02-15 2019-08-23 도쿄엘렉트론가부시키가이샤 Plasma etching method and plasma etching apparatus
JP6843089B2 (en) * 2018-04-09 2021-03-17 東京エレクトロン株式会社 Condensation prevention method and processing equipment
KR102554014B1 (en) * 2018-06-15 2023-07-11 삼성전자주식회사 Method of etching in low temperature and plasma etching apparatus
KR20200100555A (en) * 2019-02-18 2020-08-26 도쿄엘렉트론가부시키가이샤 Etching method
US11651969B2 (en) 2019-07-18 2023-05-16 Kioxia Corporation Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
JP2021028968A (en) 2019-08-13 2021-02-25 東京エレクトロン株式会社 Substrate and substrate processing method
US11688609B2 (en) 2020-05-29 2023-06-27 Tokyo Electron Limited Etching method and plasma processing apparatus
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
KR20220008007A (en) 2020-07-13 2022-01-20 (주)옵토레인 Metal-Assisted Chemical Etching Process for Silicon Substrate
TW202213502A (en) 2020-08-12 2022-04-01 日商東京威力科創股份有限公司 Etching method and plasma etching apparatus
CN115917711A (en) 2021-05-07 2023-04-04 东京毅力科创株式会社 Substrate processing method and substrate processing apparatus
WO2022234640A1 (en) 2021-05-07 2022-11-10 東京エレクトロン株式会社 Substrate processing method and substrate processing device
CN113421814B (en) * 2021-06-18 2022-05-27 长江存储科技有限责任公司 Semiconductor structure processing machine, operation method and electrostatic chuck
JP2023032693A (en) 2021-08-27 2023-03-09 東京エレクトロン株式会社 Etching method and plasma etching device
CN114959888B (en) * 2021-09-06 2023-11-10 江苏汉印机电科技股份有限公司 Production process of SiC epitaxial film
JP7385142B2 (en) * 2021-11-01 2023-11-22 ダイキン工業株式会社 Etching gas and etching method using it

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61240635A (en) * 1985-04-17 1986-10-25 Sanyo Electric Co Ltd Dry etching method
US5259922A (en) * 1990-08-14 1993-11-09 Matsushita Electric Industrial Co., Ltd. Drying etching method
JP3013446B2 (en) * 1990-12-28 2000-02-28 ソニー株式会社 Dry etching method
JP3084497B2 (en) * 1992-03-25 2000-09-04 東京エレクトロン株式会社 Method for etching SiO2 film
JP3277394B2 (en) * 1992-12-04 2002-04-22 ソニー株式会社 Method for manufacturing semiconductor device
JPH06260449A (en) * 1993-03-02 1994-09-16 Kobe Steel Ltd Plasma processor
US5494522A (en) * 1993-03-17 1996-02-27 Tokyo Electron Limited Plasma process system and method
JPH0722393A (en) 1993-06-23 1995-01-24 Toshiba Corp Dry etching equipment and method
JPH09148418A (en) * 1995-11-22 1997-06-06 Hitachi Ltd Plasma processing method and device
JPH09219439A (en) * 1996-02-13 1997-08-19 Kobe Steel Ltd Substrate treating apparatus
JPH09298192A (en) * 1996-03-04 1997-11-18 Sony Corp Semiconductor device manufacturing apparatus and method of attaching/detaching wafer to/from electrostatic chuck
US6280584B1 (en) * 1998-07-29 2001-08-28 Applied Materials, Inc. Compliant bond structure for joining ceramic to metal
US6346428B1 (en) * 1998-08-17 2002-02-12 Tegal Corporation Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processing
US6184147B1 (en) * 1999-03-05 2001-02-06 United Microelectronics Corp. Method for forming a high aspect ratio borderless contact hole
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US6986851B2 (en) * 2001-08-20 2006-01-17 Tokyo Electron Limited Dry developing method
JP4278915B2 (en) * 2002-04-02 2009-06-17 東京エレクトロン株式会社 Etching method
JP4295490B2 (en) * 2002-11-15 2009-07-15 東京エレクトロン株式会社 Processing device, chiller control method and chiller control device for processing device
US7072165B2 (en) * 2003-08-18 2006-07-04 Axcelis Technologies, Inc. MEMS based multi-polar electrostatic chuck
JP4701776B2 (en) * 2005-03-25 2011-06-15 東京エレクトロン株式会社 Etching method and etching apparatus
JP4593402B2 (en) * 2005-08-25 2010-12-08 株式会社日立ハイテクノロジーズ Etching method and etching apparatus
US8228658B2 (en) * 2007-02-08 2012-07-24 Axcelis Technologies, Inc. Variable frequency electrostatic clamping
US7675730B2 (en) * 2007-06-25 2010-03-09 Varian Semiconductor Equipment Associates, Inc. Techniques for detecting wafer charging in a plasma processing system
US20090161285A1 (en) * 2007-12-20 2009-06-25 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
TW201005825A (en) * 2008-05-30 2010-02-01 Panasonic Corp Plasma processing apparatus and method
WO2010019430A2 (en) * 2008-08-12 2010-02-18 Applied Materials, Inc. Electrostatic chuck assembly
JP5563860B2 (en) * 2010-03-26 2014-07-30 東京エレクトロン株式会社 Substrate processing method
JP6085079B2 (en) * 2011-03-28 2017-02-22 東京エレクトロン株式会社 Pattern forming method, temperature control method for member in processing container, and substrate processing system
US8992792B2 (en) * 2012-07-20 2015-03-31 Applied Materials, Inc. Method of fabricating an ultra low-k dielectric self-aligned via
JP6035117B2 (en) * 2012-11-09 2016-11-30 東京エレクトロン株式会社 Plasma etching method and plasma etching apparatus
US9006106B2 (en) * 2013-03-14 2015-04-14 Applied Materials, Inc. Method of removing a metal hardmask
US8906810B2 (en) * 2013-05-07 2014-12-09 Lam Research Corporation Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization
CN104241182B (en) * 2013-06-08 2017-07-25 中微半导体设备(上海)有限公司 The manufacture method of electrostatic chuck, electrostatic chuck and plasma processing apparatus
CN104241181B (en) * 2013-06-08 2018-05-29 中微半导体设备(上海)有限公司 The manufacturing method of electrostatic chuck, electrostatic chuck and plasma processing apparatus
CN104078399B (en) * 2014-07-25 2017-11-10 上海华力微电子有限公司 Reaction chamber and method for SiConi etchings

Also Published As

Publication number Publication date
CN105742148B (en) 2019-06-18
US9659789B2 (en) 2017-05-23
JP6408903B2 (en) 2018-10-17
TWI710021B (en) 2020-11-11
US20160189975A1 (en) 2016-06-30
TW201640579A (en) 2016-11-16
KR102033979B1 (en) 2019-10-18
CN105742148A (en) 2016-07-06
KR20160078879A (en) 2016-07-05
JP2016122774A (en) 2016-07-07

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