SE0802294L - Förfarande för tillverkning av en kiselkarbid-halvledarkrets - Google Patents

Förfarande för tillverkning av en kiselkarbid-halvledarkrets

Info

Publication number
SE0802294L
SE0802294L SE0802294A SE0802294A SE0802294L SE 0802294 L SE0802294 L SE 0802294L SE 0802294 A SE0802294 A SE 0802294A SE 0802294 A SE0802294 A SE 0802294A SE 0802294 L SE0802294 L SE 0802294L
Authority
SE
Sweden
Prior art keywords
manufacturing
silicon carbide
carbide semiconductor
semiconductor circuit
semiconductor substrate
Prior art date
Application number
SE0802294A
Other languages
English (en)
Other versions
SE533497C2 (sv
Inventor
Masatake Nagaya
Yuuichi Takeuchi
Katsuhiro Nagata
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of SE0802294L publication Critical patent/SE0802294L/sv
Publication of SE533497C2 publication Critical patent/SE533497C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8213—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using SiC technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
SE0802294A 2007-11-13 2008-10-28 Förfarande för tillverkning av en kiselkarbid-halvledarkrets SE533497C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007294163A JP4732423B2 (ja) 2007-11-13 2007-11-13 炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
SE0802294L true SE0802294L (sv) 2009-05-14
SE533497C2 SE533497C2 (sv) 2010-10-12

Family

ID=40624093

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0802294A SE533497C2 (sv) 2007-11-13 2008-10-28 Förfarande för tillverkning av en kiselkarbid-halvledarkrets

Country Status (3)

Country Link
US (1) US7763543B2 (sv)
JP (1) JP4732423B2 (sv)
SE (1) SE533497C2 (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113561053A (zh) * 2021-08-03 2021-10-29 青岛佳恩半导体有限公司 一种超薄碳化硅单晶衬底的制备设备及方法

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* Cited by examiner, † Cited by third party
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JP5096556B2 (ja) * 2007-04-17 2012-12-12 アイメック 基板の薄層化方法
JP5335576B2 (ja) * 2009-06-26 2013-11-06 株式会社ディスコ 半導体ウエーハの加工方法
JP5350127B2 (ja) * 2009-08-13 2013-11-27 株式会社ディスコ 被加工物の研削方法
DE102009051007B4 (de) * 2009-10-28 2011-12-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
JP5666897B2 (ja) * 2010-12-28 2015-02-12 日本電産サンキョー株式会社 多チャンネル磁気センサ装置の製造方法および多チャンネル磁気センサ装置
WO2012093684A1 (ja) * 2011-01-06 2012-07-12 日立金属株式会社 炭化珪素単結晶基板への識別マークの形成方法、及び炭化珪素単結晶基板
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
JP6106419B2 (ja) * 2012-12-12 2017-03-29 昭和電工株式会社 ＳｉＣ基板の製造方法
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6648743B2 (ja) 2016-10-05 2020-02-14 株式会社デンソー 炭化珪素半導体装置の製造方法
JP2021077757A (ja) * 2019-11-08 2021-05-20 株式会社ディスコ ＳｉＣ基板の再生方法
US20220115226A1 (en) * 2020-10-08 2022-04-14 Okmetic Oy Manufacture method of a high-resistivity silicon handle wafer for a hybrid substrate structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144638A (ja) 1996-11-15 1998-05-29 Sony Corp 半導体装置の製造方法
US5816900A (en) * 1997-07-17 1998-10-06 Lsi Logic Corporation Apparatus for polishing a substrate at radially varying polish rates
US5997392A (en) * 1997-07-22 1999-12-07 International Business Machines Corporation Slurry injection technique for chemical-mechanical polishing
WO2001015223A1 (fr) * 1999-08-23 2001-03-01 Rohm Co., Ltd. Dispositif semi-conducteur et son procede de fabrication
JP4028163B2 (ja) * 1999-11-16 2007-12-26 株式会社デンソー メカノケミカル研磨方法及びメカノケミカル研磨装置
JP2002151786A (ja) * 2000-11-10 2002-05-24 Sharp Corp 半導体レーザ素子
JP4719991B2 (ja) * 2001-03-12 2011-07-06 株式会社デンソー 炭化珪素半導体装置の製造方法
WO2004053967A1 (ja) * 2002-12-10 2004-06-24 Fujitsu Limited 半導体装置、配線基板の形成方法及び基板処理装置
US7485962B2 (en) * 2002-12-10 2009-02-03 Fujitsu Limited Semiconductor device, wiring substrate forming method, and substrate processing apparatus
JP2006032655A (ja) * 2004-07-16 2006-02-02 Kyoto Univ 炭化珪素基板の製造方法
WO2006031641A2 (en) * 2004-09-10 2006-03-23 Cree, Inc. Method of manufacturing carrier wafer and resulting carrier wafer structures
JP2007197302A (ja) * 2005-12-28 2007-08-09 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法および製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113561053A (zh) * 2021-08-03 2021-10-29 青岛佳恩半导体有限公司 一种超薄碳化硅单晶衬底的制备设备及方法
CN113561053B (zh) * 2021-08-03 2024-05-31 青岛佳恩半导体有限公司 一种超薄碳化硅单晶衬底的制备设备及方法

Also Published As

Publication number Publication date
JP2009123806A (ja) 2009-06-04
SE533497C2 (sv) 2010-10-12
US7763543B2 (en) 2010-07-27
US20090124060A1 (en) 2009-05-14
JP4732423B2 (ja) 2011-07-27

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