NO20091286L - Krystallfabrikasjon - Google Patents
KrystallfabrikasjonInfo
- Publication number
- NO20091286L NO20091286L NO20091286A NO20091286A NO20091286L NO 20091286 L NO20091286 L NO 20091286L NO 20091286 A NO20091286 A NO 20091286A NO 20091286 A NO20091286 A NO 20091286A NO 20091286 L NO20091286 L NO 20091286L
- Authority
- NO
- Norway
- Prior art keywords
- crystal fabrication
- fabrication
- crystal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Steroid Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/514,177 US8152921B2 (en) | 2006-09-01 | 2006-09-01 | Crystal manufacturing |
PCT/FI2007/000217 WO2008025872A2 (en) | 2006-09-01 | 2007-08-31 | Crystal manufacturing |
Publications (2)
Publication Number | Publication Date |
---|---|
NO20091286L true NO20091286L (no) | 2009-05-29 |
NO346806B1 NO346806B1 (no) | 2023-01-16 |
Family
ID=38691083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20091286A NO346806B1 (no) | 2006-09-01 | 2007-08-31 | Krystallfabrikasjon |
Country Status (10)
Country | Link |
---|---|
US (2) | US8152921B2 (no) |
EP (1) | EP2057305B1 (no) |
JP (1) | JP5707040B2 (no) |
KR (1) | KR101472330B1 (no) |
CN (1) | CN101548031B (no) |
CA (1) | CA2664325C (no) |
NO (1) | NO346806B1 (no) |
RU (1) | RU2456386C2 (no) |
TW (1) | TWI468561B (no) |
WO (1) | WO2008025872A2 (no) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4730937B2 (ja) * | 2004-12-13 | 2011-07-20 | Sumco Techxiv株式会社 | 半導体単結晶製造装置および製造方法 |
US8152921B2 (en) | 2006-09-01 | 2012-04-10 | Okmetic Oyj | Crystal manufacturing |
DE102006060359B4 (de) * | 2006-12-20 | 2013-09-05 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium |
TW200914371A (en) * | 2007-06-01 | 2009-04-01 | Gt Solar Inc | Processing of fine silicon powder to produce bulk silicon |
KR20120083333A (ko) * | 2009-09-02 | 2012-07-25 | 지티 크리스탈 시스템스, 엘엘씨 | 조절된 압력하에 헬륨을 사용하는 고온 처리 방법 |
JP5392040B2 (ja) | 2009-12-04 | 2014-01-22 | 信越半導体株式会社 | 単結晶製造装置及び単結晶製造方法 |
KR101218852B1 (ko) * | 2010-01-05 | 2013-01-18 | 주식회사 엘지실트론 | 단결정 성장장치의 단열장치 및 이를 포함하는 단결정 성장장치 |
CN101914808A (zh) * | 2010-07-19 | 2010-12-15 | 常州天合光能有限公司 | 可消除挥发份在热屏外侧沉积的单晶炉热场 |
TW201224230A (en) * | 2010-10-21 | 2012-06-16 | Advanced Renewable Energy Company Llc | Intermediate materials and methods for high-temperature applications |
CN101979720A (zh) * | 2010-11-30 | 2011-02-23 | 奥特斯维能源(太仓)有限公司 | 一种单晶炉热场 |
JP2013053017A (ja) * | 2011-09-01 | 2013-03-21 | Shin Etsu Handotai Co Ltd | 単結晶育成装置 |
JP5470349B2 (ja) * | 2011-10-17 | 2014-04-16 | ジルトロニック アクチエンゲゼルシャフト | p型シリコン単結晶およびその製造方法 |
US9206525B2 (en) | 2011-11-30 | 2015-12-08 | General Electric Company | Method for configuring a system to grow a crystal by coupling a heat transfer device comprising at least one elongate member beneath a crucible |
JP5776587B2 (ja) * | 2012-02-24 | 2015-09-09 | 信越半導体株式会社 | 単結晶製造方法 |
US9664448B2 (en) * | 2012-07-30 | 2017-05-30 | Solar World Industries America Inc. | Melting apparatus |
DE102012213715A1 (de) * | 2012-08-02 | 2014-02-06 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone |
JP5904079B2 (ja) * | 2012-10-03 | 2016-04-13 | 信越半導体株式会社 | シリコン単結晶育成装置及びシリコン単結晶育成方法 |
JP2014094842A (ja) * | 2012-11-07 | 2014-05-22 | Shin Etsu Handotai Co Ltd | 単結晶製造装置 |
CN105051267B (zh) * | 2013-01-23 | 2018-07-06 | Lg矽得荣株式会社 | 单晶体生长设备 |
TW201435158A (zh) * | 2013-03-15 | 2014-09-16 | Saint Gobain Ceramics | 帶狀藍寶石以及用以產生複數個具有改良尺寸穩定性之帶狀藍寶石之設備以及方法 |
KR101530274B1 (ko) * | 2013-08-27 | 2015-06-23 | 주식회사 엘지실트론 | 잉곳성장장치 및 잉곳성장방법 |
CN105002556A (zh) * | 2014-04-21 | 2015-10-28 | 洛阳金诺机械工程有限公司 | 一种拉制硅芯时提高硅芯结晶速度的装置 |
TWI633612B (zh) * | 2014-06-19 | 2018-08-21 | 蘭姆研究股份公司 | 用以與處理晶圓狀物件用之設備一起使用的收集器 |
US10358740B2 (en) * | 2014-07-25 | 2019-07-23 | Corner Star Limited | Crystal growing systems and methods including a passive heater |
CN104651934B (zh) * | 2014-10-17 | 2017-12-01 | 洛阳西格马炉业股份有限公司 | 一种节能型蓝宝石晶体生长炉 |
DE102014226297A1 (de) * | 2014-12-17 | 2016-06-23 | Sgl Carbon Se | Doppelwandiger Graphit-Trichter |
US11313049B2 (en) * | 2015-10-19 | 2022-04-26 | Globalwafers Co., Ltd. | Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects |
CN105369346A (zh) * | 2015-12-09 | 2016-03-02 | 天津市环欧半导体材料技术有限公司 | 一种直拉重掺砷低电阻硅单晶的装置 |
CN105525342A (zh) * | 2015-12-22 | 2016-04-27 | 英利集团有限公司 | 一种直拉法制备大尺寸单晶硅棒的方法及单晶炉 |
US10487418B2 (en) | 2016-01-06 | 2019-11-26 | Globalwafers Co., Ltd. | Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process |
JP6304424B1 (ja) | 2017-04-05 | 2018-04-04 | 株式会社Sumco | 熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法 |
JP6828674B2 (ja) * | 2017-12-20 | 2021-02-10 | 株式会社Sumco | クリーニング方法、シリコン単結晶の製造方法、および、クリーニング装置 |
CN109309035A (zh) * | 2018-11-08 | 2019-02-05 | 德淮半导体有限公司 | 半导体工艺腔室及其形成方法、半导体工艺装置 |
CN111519241B (zh) * | 2019-02-01 | 2021-12-17 | 上海新昇半导体科技有限公司 | 一种半导体晶体生长装置 |
CN109943882A (zh) * | 2019-03-28 | 2019-06-28 | 浙江晶鸿精密机械制造有限公司 | 一种应用于单晶炉一体式水冷套结构 |
US11534967B2 (en) | 2019-12-12 | 2022-12-27 | Arcam Ab | Additive manufacturing apparatuses with powder distributors and methods of use |
EP4130349A4 (en) | 2020-05-06 | 2023-10-18 | Meishan Boya Advanced Materials Co., Ltd. | CRYSTAL PRODUCTION APPARATUS AND GROWTH METHOD |
CN111254486A (zh) * | 2020-05-06 | 2020-06-09 | 眉山博雅新材料有限公司 | 一种晶体制备装置 |
JP7432734B2 (ja) * | 2020-08-10 | 2024-02-16 | 西安奕斯偉材料科技股▲ふん▼有限公司 | 単結晶炉の組立スリーブ及び単結晶炉 |
US20220145492A1 (en) * | 2020-11-12 | 2022-05-12 | GlobalWaters Co., Ltd. | Ingot puller apparatus having a heat shield disposed below a side heater and methods for preparing an ingot with such apparatus |
CN114318510B (zh) * | 2021-12-30 | 2023-09-19 | 无锡晶名光电科技有限公司 | 锑化铟晶体生长方法及晶体生长炉 |
CN115074829B (zh) * | 2022-07-13 | 2024-01-26 | 西安奕斯伟材料科技股份有限公司 | 拉晶炉 |
CN115506017A (zh) * | 2022-10-27 | 2022-12-23 | 徐州鑫晶半导体科技有限公司 | 单晶硅生长炉及其控制方法 |
CN116043329B (zh) * | 2023-03-31 | 2023-05-30 | 苏州晨晖智能设备有限公司 | 一种具有氩气定位导向功能的单晶炉 |
CN117305972B (zh) * | 2023-11-28 | 2024-02-13 | 内蒙古鼎泰万邦新材料有限公司 | 一种单晶炉 |
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DE2821481C2 (de) * | 1978-05-17 | 1985-12-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze |
JPS61158890A (ja) * | 1984-12-28 | 1986-07-18 | Fujitsu Ltd | 結晶成長装置 |
JPH0745354B2 (ja) * | 1987-08-31 | 1995-05-17 | 新日本製鐵株式会社 | 単結晶棒の引上げ装置 |
JPH0639352B2 (ja) * | 1987-09-11 | 1994-05-25 | 信越半導体株式会社 | 単結晶の製造装置 |
JPH0633218B2 (ja) * | 1987-12-08 | 1994-05-02 | 日本鋼管株式会社 | シリコン単結晶の製造装置 |
US5260037A (en) * | 1990-03-12 | 1993-11-09 | Osaka Titanium Co., Ltd. | Apparatus for producing silicon single crystal |
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US5363795A (en) * | 1991-09-04 | 1994-11-15 | Kawasaki Steel Corporation | Czochralski crystal pulling process and an apparatus for carrying out the same |
US5373805A (en) * | 1991-10-17 | 1994-12-20 | Shin-Etsu Handotai Co., Ltd. | Single crystal pulling apparatus |
JP2795036B2 (ja) * | 1992-02-04 | 1998-09-10 | 信越半導体株式会社 | 単結晶引上装置 |
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JP2807609B2 (ja) * | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | 単結晶の引上装置 |
JPH06340490A (ja) * | 1993-05-31 | 1994-12-13 | Sumitomo Sitix Corp | シリコン単結晶製造装置 |
JP2619611B2 (ja) * | 1993-05-31 | 1997-06-11 | 住友シチックス株式会社 | 単結晶の製造装置および製造方法 |
US5443034A (en) * | 1994-08-17 | 1995-08-22 | Solec International, Inc. | Method and apparatus for increasing silicon ingot growth rate |
DE4442829A1 (de) * | 1994-12-01 | 1996-06-05 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zur Herstellung eines Einkristalls |
JP2940437B2 (ja) * | 1995-06-01 | 1999-08-25 | 信越半導体株式会社 | 単結晶の製造方法及び装置 |
EP0765954B1 (de) | 1995-09-26 | 1999-04-28 | Balzers und Leybold Deutschland Holding Aktiengesellschaft | Kristallziehanlage |
JP2937109B2 (ja) * | 1996-02-29 | 1999-08-23 | 住友金属工業株式会社 | 単結晶の製造装置および製造方法 |
JPH1072277A (ja) * | 1996-08-30 | 1998-03-17 | Mitsubishi Materials Corp | シリコン単結晶の育成方法及びその装置 |
US5904768A (en) * | 1996-10-15 | 1999-05-18 | Memc Electronic Materials, Inc. | Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
US5942032A (en) * | 1997-08-01 | 1999-08-24 | Memc Electronic Materials, Inc. | Heat shield assembly and method of growing vacancy rich single crystal silicon |
JP2003221296A (ja) * | 2002-01-29 | 2003-08-05 | Komatsu Electronic Metals Co Ltd | 単結晶の製造装置及び製造方法 |
JP4161804B2 (ja) * | 2003-05-30 | 2008-10-08 | 株式会社Sumco | シリコン単結晶引上げ装置の熱遮蔽部材 |
US8152921B2 (en) * | 2006-09-01 | 2012-04-10 | Okmetic Oyj | Crystal manufacturing |
-
2006
- 2006-09-01 US US11/514,177 patent/US8152921B2/en active Active
-
2007
- 2007-08-29 TW TW96131961A patent/TWI468561B/zh active
- 2007-08-31 WO PCT/FI2007/000217 patent/WO2008025872A2/en active Application Filing
- 2007-08-31 NO NO20091286A patent/NO346806B1/no unknown
- 2007-08-31 RU RU2009110967/05A patent/RU2456386C2/ru active
- 2007-08-31 CA CA2664325A patent/CA2664325C/en active Active
- 2007-08-31 EP EP07823079.4A patent/EP2057305B1/en active Active
- 2007-08-31 JP JP2009526143A patent/JP5707040B2/ja active Active
- 2007-08-31 CN CN200780040210.1A patent/CN101548031B/zh active Active
- 2007-08-31 KR KR1020097006758A patent/KR101472330B1/ko active IP Right Grant
-
2012
- 2012-03-09 US US13/416,998 patent/US8641820B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP5707040B2 (ja) | 2015-04-22 |
US8152921B2 (en) | 2012-04-10 |
CN101548031A (zh) | 2009-09-30 |
WO2008025872A2 (en) | 2008-03-06 |
EP2057305B1 (en) | 2014-12-10 |
CA2664325C (en) | 2015-02-24 |
NO346806B1 (no) | 2023-01-16 |
WO2008025872A3 (en) | 2008-10-02 |
KR101472330B1 (ko) | 2014-12-12 |
US20080053372A1 (en) | 2008-03-06 |
CN101548031B (zh) | 2014-07-16 |
US20120217446A1 (en) | 2012-08-30 |
JP2010501466A (ja) | 2010-01-21 |
RU2009110967A (ru) | 2010-10-10 |
RU2456386C2 (ru) | 2012-07-20 |
EP2057305A2 (en) | 2009-05-13 |
US8641820B2 (en) | 2014-02-04 |
CA2664325A1 (en) | 2008-03-06 |
TW200817537A (en) | 2008-04-16 |
KR20090058009A (ko) | 2009-06-08 |
TWI468561B (zh) | 2015-01-11 |
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