NL8900480A - Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof. - Google Patents

Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof. Download PDF

Info

Publication number: NL8900480A
Authority: NL; Netherlands
Prior art keywords: liquid; substrates; vapor; shaped member; organic solvent
Prior art date: 1989-02-27

Application number

NL8900480A

Other languages

English (en)

Dutch (nl)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-02-27

Filing date

1989-02-27

Publication date

1990-09-17

1989-02-27 Application filed by Philips Nv filed Critical Philips Nv

1989-02-27 Priority to NL8900480A priority Critical patent/NL8900480A/nl

1990-02-21 Priority to DE69012373T priority patent/DE69012373T2/de

1990-02-21 Priority to EP90200409A priority patent/EP0385536B1/de

1990-02-22 Priority to JP2042302A priority patent/JP3009699B2/ja

1990-02-23 Priority to KR1019900002291A priority patent/KR0173449B1/ko

1990-02-24 Priority to CN90100958A priority patent/CN1023450C/zh

1990-09-17 Publication of NL8900480A publication Critical patent/NL8900480A/nl

1992-07-15 Priority to US07/914,654 priority patent/US6012472A/en

1998-07-30 Priority to US09/126,621 priority patent/US6139645A/en

2000-01-14 Priority to US09/502,724 priority patent/US6170495B1/en

2000-11-13 Priority to US09/711,231 priority patent/US6533872B1/en

Links

239000007788 liquid Substances 0.000 title claims description 121
239000000758 substrate Substances 0.000 title claims description 103
238000000034 method Methods 0.000 title claims description 28
238000001035 drying Methods 0.000 title description 24
238000011282 treatment Methods 0.000 title description 5
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 21
239000003960 organic solvent Substances 0.000 claims description 17
239000000203 mixture Substances 0.000 claims description 14
239000000126 substance Substances 0.000 claims description 13
BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 12
WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 10
YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 5
ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
239000012159 carrier gas Substances 0.000 claims description 3
239000007789 gas Substances 0.000 claims description 3
238000002156 mixing Methods 0.000 claims description 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
229910052710 silicon Inorganic materials 0.000 description 7
239000010703 silicon Substances 0.000 description 7
229920002120 photoresistant polymer Polymers 0.000 description 6
229960004592 isopropanol Drugs 0.000 description 5
235000012431 wafers Nutrition 0.000 description 5
238000005530 etching Methods 0.000 description 4
239000012535 impurity Substances 0.000 description 4
229940044613 1-propanol Drugs 0.000 description 3
LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
239000000428 dust Substances 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
239000000463 material Substances 0.000 description 3
239000002245 particle Substances 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
239000002904 solvent Substances 0.000 description 3
238000012360 testing method Methods 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
150000001298 alcohols Chemical class 0.000 description 2
150000001299 aldehydes Chemical class 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
238000009833 condensation Methods 0.000 description 2
230000005494 condensation Effects 0.000 description 2
150000002148 esters Chemical class 0.000 description 2
239000011521 glass Substances 0.000 description 2
150000002576 ketones Chemical class 0.000 description 2
239000002184 metal Substances 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000004033 plastic Substances 0.000 description 2
239000010453 quartz Substances 0.000 description 2
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
239000004809 Teflon Substances 0.000 description 1
229920006362 Teflon® Polymers 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
229950005499 carbon tetrachloride Drugs 0.000 description 1
239000000356 contaminant Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
239000008367 deionised water Substances 0.000 description 1
229910021641 deionized water Inorganic materials 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
150000002334 glycols Chemical class 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
230000005499 meniscus Effects 0.000 description 1
150000002739 metals Chemical group 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
210000000056 organ Anatomy 0.000 description 1
238000012545 processing Methods 0.000 description 1
108090000623 proteins and genes Proteins 0.000 description 1
239000005871 repellent Substances 0.000 description 1
229920006395 saturated elastomer Polymers 0.000 description 1
239000011780 sodium chloride Substances 0.000 description 1
VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Cleaning Or Drying Semiconductors (AREA)
Drying Of Solid Materials (AREA)
Cleaning By Liquid Or Steam (AREA)
Weting (AREA)

NL8900480A 1989-02-27 1989-02-27 Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof. NL8900480A (nl)

Priority Applications (10)

Application Number	Priority Date	Filing Date	Title
NL8900480A NL8900480A (nl)	1989-02-27	1989-02-27	Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
DE69012373T DE69012373T2 (de)	1989-02-27	1990-02-21	Verfahren und Vorrichtung zum Trocknen von Substraten nach Behandlung in einer Flüssigkeit.
EP90200409A EP0385536B1 (de)	1989-02-27	1990-02-21	Verfahren und Vorrichtung zum Trocknen von Substraten nach Behandlung in einer Flüssigkeit
JP2042302A JP3009699B2 (ja)	1989-02-27	1990-02-22	基板の処理方法
KR1019900002291A KR0173449B1 (ko)	1989-02-27	1990-02-23	기판 처리방법 및 그 장치
CN90100958A CN1023450C (zh)	1989-02-27	1990-02-24	对经液体处理后的基片进行清洁干燥的方法和装置
US07/914,654 US6012472A (en)	1989-02-27	1992-07-15	Method and arrangement for drying substrates after treatment in a liquid
US09/126,621 US6139645A (en)	1989-02-27	1998-07-30	Method and arrangement for drying substrates after treatment in a liquid
US09/502,724 US6170495B1 (en)	1989-02-27	2000-01-14	Apparatus for treating substrates using the marangoni effect
US09/711,231 US6533872B1 (en)	1989-02-27	2000-11-13	Method and arrangement for drying substrates after treatment in a liquid

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL8900480A NL8900480A (nl)	1989-02-27	1989-02-27	Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
NL8900480		1989-02-27

Publications (1)

Publication Number	Publication Date
NL8900480A true NL8900480A (nl)	1990-09-17

Family

ID=19854214

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8900480A NL8900480A (nl)	1989-02-27	1989-02-27	Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.

Country Status (7)

Country	Link
US (4)	US6012472A (de)
EP (1)	EP0385536B1 (de)
JP (1)	JP3009699B2 (de)
KR (1)	KR0173449B1 (de)
CN (1)	CN1023450C (de)
DE (1)	DE69012373T2 (de)
NL (1)	NL8900480A (de)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
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NL8900480A (nl) *	1989-02-27	1990-09-17	Philips Nv	Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
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NL9000484A (nl) *	1990-03-01	1991-10-01	Philips Nv	Werkwijze voor het in een centrifuge verwijderen van een vloeistof van een oppervlak van een substraat.
JPH04215878A (ja) *	1990-03-14	1992-08-06	Seiko Epson Corp	液中ジェット洗浄方法及び洗浄装置
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1989
- 1989-02-27 NL NL8900480A patent/NL8900480A/nl not_active Application Discontinuation
1990
- 1990-02-21 DE DE69012373T patent/DE69012373T2/de not_active Expired - Lifetime
- 1990-02-21 EP EP90200409A patent/EP0385536B1/de not_active Expired - Lifetime
- 1990-02-22 JP JP2042302A patent/JP3009699B2/ja not_active Expired - Lifetime
- 1990-02-23 KR KR1019900002291A patent/KR0173449B1/ko not_active IP Right Cessation
- 1990-02-24 CN CN90100958A patent/CN1023450C/zh not_active Expired - Lifetime
1992
- 1992-07-15 US US07/914,654 patent/US6012472A/en not_active Expired - Lifetime
1998
- 1998-07-30 US US09/126,621 patent/US6139645A/en not_active Expired - Fee Related
2000
- 2000-01-14 US US09/502,724 patent/US6170495B1/en not_active Expired - Fee Related
- 2000-11-13 US US09/711,231 patent/US6533872B1/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0385536B1 (de)	1994-09-14
KR0173449B1 (ko)	1999-04-01
EP0385536A1 (de)	1990-09-05
CN1045539A (zh)	1990-09-26
US6139645A (en)	2000-10-31
KR900013597A (ko)	1990-09-06
DE69012373D1 (de)	1994-10-20
US6012472A (en)	2000-01-11
US6170495B1 (en)	2001-01-09
JP3009699B2 (ja)	2000-02-14
US6533872B1 (en)	2003-03-18
JPH02291128A (ja)	1990-11-30
CN1023450C (zh)	1994-01-12
DE69012373T2 (de)	1995-04-20

Legal Events

Date	Code	Title	Description
1990-09-17	A1B	A search report has been drawn up
1991-10-01	BV	The patent application has lapsed

Publication	Publication Date	Title
NL8900480A (nl)	1990-09-17	Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
US5105556A (en)	1992-04-21	Vapor washing process and apparatus
US6132811A (en)	2000-10-17	Procedure for the drying of silicon
JP5424848B2 (ja)	2014-02-26	半導体基板の表面処理装置及び方法
US6637445B2 (en)	2003-10-28	Substrate processing unit
JPH0878372A (ja)	1996-03-22	有機物除去方法及びその装置
US20060040506A1 (en)	2006-02-23	Semiconductor fabrication methods and apparatus
AU697397B2 (en)	1998-10-08	Procedure for the drying of silicon
KR101457732B1 (ko)	2014-11-03	조기 건조를 방지하는 장치, 시스템, 및 방법
JPH04251930A (ja)	1992-09-08	洗浄処理後の基板の乾燥処理方法並びに乾燥処理装置
US6495215B1 (en)	2002-12-17	Method and apparatus for processing substrate
US6030754A (en)	2000-02-29	Photoresist removal without organic solvent following ashing operation
US5815942A (en)	1998-10-06	Vapor drying system and method
JP2502232B2 (ja)	1996-05-29	高分子系薄膜のドライ・エッチング加工法
Marra	1993	Ultraclean Marangoni Drying
JP2588524Y2 (ja)	1999-01-13	基板の純水引上げ乾燥装置
KR100431186B1 (ko)	2004-05-12	웨이퍼의 세정 및 건조 방법
CN115430665A (zh)	2022-12-06	一种从半导体中去除纳米级颗粒的基质激光清洗方法
JPH06291105A (ja)	1994-10-18	化合物半導体単結晶基板の洗浄、乾燥方法
JPH09205056A (ja)	1997-08-05	レジスト剥離と水洗方法
JPH09314073A (ja)	1997-12-09	基板乾燥方法
JPH0878370A (ja)	1996-03-22	半導体基板の洗浄装置と洗浄方法