CN1023450C - 对经液体处理后的基片进行清洁干燥的方法和装置 - Google Patents
对经液体处理后的基片进行清洁干燥的方法和装置 Download PDFInfo
- Publication number
- CN1023450C CN1023450C CN90100958A CN90100958A CN1023450C CN 1023450 C CN1023450 C CN 1023450C CN 90100958 A CN90100958 A CN 90100958A CN 90100958 A CN90100958 A CN 90100958A CN 1023450 C CN1023450 C CN 1023450C
- Authority
- CN
- China
- Prior art keywords
- liquid
- substrate
- groove
- steam
- organic solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 126
- 239000007788 liquid Substances 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000001035 drying Methods 0.000 title claims abstract description 28
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 239000003960 organic solvent Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 12
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical group C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 6
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical group CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229960005082 etohexadiol Drugs 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 238000011109 contamination Methods 0.000 abstract 1
- -1 for example Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 14
- 206010070834 Sensitisation Diseases 0.000 description 6
- 230000008313 sensitization Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000004922 lacquer Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 241001252483 Kalimeris Species 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920002994 synthetic fiber Polymers 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- BOSAWIQFTJIYIS-UHFFFAOYSA-N 1,1,1-trichloro-2,2,2-trifluoroethane Chemical compound FC(F)(F)C(Cl)(Cl)Cl BOSAWIQFTJIYIS-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical class CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8900480A NL8900480A (nl) | 1989-02-27 | 1989-02-27 | Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof. |
NL8900480 | 1989-02-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1045539A CN1045539A (zh) | 1990-09-26 |
CN1023450C true CN1023450C (zh) | 1994-01-12 |
Family
ID=19854214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN90100958A Expired - Lifetime CN1023450C (zh) | 1989-02-27 | 1990-02-24 | 对经液体处理后的基片进行清洁干燥的方法和装置 |
Country Status (7)
Country | Link |
---|---|
US (4) | US6012472A (zh) |
EP (1) | EP0385536B1 (zh) |
JP (1) | JP3009699B2 (zh) |
KR (1) | KR0173449B1 (zh) |
CN (1) | CN1023450C (zh) |
DE (1) | DE69012373T2 (zh) |
NL (1) | NL8900480A (zh) |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8900480A (nl) * | 1989-02-27 | 1990-09-17 | Philips Nv | Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof. |
JPH06103686B2 (ja) * | 1989-11-24 | 1994-12-14 | シー エフ エム テクノロジーズ,インコーポレイテッド | 表面乾燥処理方法および装置 |
NL9000484A (nl) * | 1990-03-01 | 1991-10-01 | Philips Nv | Werkwijze voor het in een centrifuge verwijderen van een vloeistof van een oppervlak van een substraat. |
JPH04215878A (ja) * | 1990-03-14 | 1992-08-06 | Seiko Epson Corp | 液中ジェット洗浄方法及び洗浄装置 |
WO1993006949A1 (en) | 1991-10-04 | 1993-04-15 | Cfm Technologies, Inc. | Ultracleaning of involuted microparts |
JP2639771B2 (ja) * | 1991-11-14 | 1997-08-13 | 大日本スクリーン製造株式会社 | 基板の洗浄・乾燥処理方法並びにその処理装置 |
JPH06196472A (ja) * | 1992-12-22 | 1994-07-15 | Soltec:Kk | ウェットエッチング方法及びウェット洗浄方法 |
JP3347814B2 (ja) * | 1993-05-17 | 2002-11-20 | 大日本スクリーン製造株式会社 | 基板の洗浄・乾燥処理方法並びにその処理装置 |
US5464480A (en) * | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
US5911837A (en) * | 1993-07-16 | 1999-06-15 | Legacy Systems, Inc. | Process for treatment of semiconductor wafers in a fluid |
AU7923894A (en) † | 1993-09-22 | 1995-04-10 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
JP2888409B2 (ja) * | 1993-12-14 | 1999-05-10 | 信越半導体株式会社 | ウェーハ洗浄槽 |
DE4413077C2 (de) * | 1994-04-15 | 1997-02-06 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zur chemischen Behandlung von Substraten |
DE4428169C2 (de) * | 1994-08-09 | 1996-07-11 | Steag Micro Tech Gmbh | Träger für Substrate |
US5772784A (en) * | 1994-11-14 | 1998-06-30 | Yieldup International | Ultra-low particle semiconductor cleaner |
US5634978A (en) * | 1994-11-14 | 1997-06-03 | Yieldup International | Ultra-low particle semiconductor method |
US5849104A (en) * | 1996-09-19 | 1998-12-15 | Yieldup International | Method and apparatus for cleaning wafers using multiple tanks |
US5571337A (en) * | 1994-11-14 | 1996-11-05 | Yieldup International | Method for cleaning and drying a semiconductor wafer |
US5958146A (en) * | 1994-11-14 | 1999-09-28 | Yieldup International | Ultra-low particle semiconductor cleaner using heated fluids |
DE19549490C2 (de) * | 1995-01-05 | 2001-01-18 | Steag Micro Tech Gmbh | Anlage zur chemischen Naßbehandlung |
DE19546990C2 (de) * | 1995-01-05 | 1997-07-03 | Steag Micro Tech Gmbh | Anlage zur chemischen Naßbehandlung |
JPH08211592A (ja) * | 1995-02-07 | 1996-08-20 | Nikon Corp | 洗浄乾燥方法及び洗浄乾燥装置 |
DE19517573C2 (de) * | 1995-05-12 | 2000-11-02 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zur Naßbehandlung von Substraten in einem Behälter |
US5714203A (en) * | 1995-08-23 | 1998-02-03 | Ictop Entwicklungs Gmbh | Procedure for the drying of silicon |
DE19531031C2 (de) * | 1995-08-23 | 1997-08-21 | Ictop Entwicklungsgesellschaft | Verfahren zum Trocknen von Silizium |
DE19541436C2 (de) | 1995-11-07 | 1998-10-08 | Steag Micro Tech Gmbh | Anlage zur Behandlung von Gegenständen in einem Prozeßtank |
TW322605B (zh) * | 1995-12-07 | 1997-12-11 | Tokyo Electron Co Ltd | |
TW310452B (zh) | 1995-12-07 | 1997-07-11 | Tokyo Electron Co Ltd | |
EP0784336A3 (en) | 1995-12-15 | 1998-05-13 | Texas Instruments Incorporated | Improvements in or relating to the fabrication and processing of semiconductor devices |
DE19800584C2 (de) * | 1998-01-09 | 2002-06-20 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zum Trocknen von Substraten |
DE19613620C2 (de) * | 1996-04-04 | 1998-04-16 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zum Trocknen von Substraten |
DE19637875C2 (de) | 1996-04-17 | 1999-07-22 | Steag Micro Tech Gmbh | Anlage zur Naßbehandlung von Substraten |
DE19703646C2 (de) * | 1996-04-22 | 1998-04-09 | Steag Micro Tech Gmbh | Vorrichtung und Verfahren zum Behandeln von Substraten in einem Fluid-Behälter |
JP4421686B2 (ja) | 1996-06-24 | 2010-02-24 | インテルウニフェルシテール ミクロエレクトロニカ セントルム フェライニジンク ゾンダ ウィンストベヤーク | 平坦な基材を湿式でクリーニングまたはエッチングするための装置および方法 |
US6045624A (en) * | 1996-09-27 | 2000-04-04 | Tokyo Electron Limited | Apparatus for and method of cleaning objects to be processed |
DE19640848C2 (de) | 1996-10-03 | 1998-07-16 | Steag Microtech Gmbh Pliezhaus | Verfahren und Vorrichtung zum Behandeln von Substraten |
DE19706072C1 (de) * | 1997-02-17 | 1998-06-04 | Steag Microtech Gmbh Pliezhaus | Vorrichtung und Verfahren zum Behandeln von Substraten in einem Fluid-Behälter |
US6350322B1 (en) | 1997-03-21 | 2002-02-26 | Micron Technology, Inc. | Method of reducing water spotting and oxide growth on a semiconductor structure |
US6164297A (en) * | 1997-06-13 | 2000-12-26 | Tokyo Electron Limited | Cleaning and drying apparatus for objects to be processed |
JP3151613B2 (ja) | 1997-06-17 | 2001-04-03 | 東京エレクトロン株式会社 | 洗浄・乾燥処理方法及びその装置 |
JPH1126423A (ja) * | 1997-07-09 | 1999-01-29 | Sugai:Kk | 半導体ウエハ等の処理方法並びにその処理装置 |
US6158449A (en) * | 1997-07-17 | 2000-12-12 | Tokyo Electron Limited | Cleaning and drying method and apparatus |
US5884640A (en) * | 1997-08-07 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for drying substrates |
US6261377B1 (en) * | 1997-09-24 | 2001-07-17 | Interuniversitair Microelektronica Centrum (Imec) | Method of removing particles and a liquid from a surface of substrate |
US5807439A (en) * | 1997-09-29 | 1998-09-15 | Siemens Aktiengesellschaft | Apparatus and method for improved washing and drying of semiconductor wafers |
JP3043709B2 (ja) | 1997-11-19 | 2000-05-22 | 株式会社カイジョー | 基板の乾燥装置 |
JPH11176798A (ja) * | 1997-12-08 | 1999-07-02 | Toshiba Corp | 基板洗浄・乾燥装置及び方法 |
EP1044465A4 (en) * | 1997-12-10 | 2001-07-18 | Cfmt Inc | WET PROCESSING PROCESSES FOR THE MANUFACTURE OF ELECTRONIC COMPONENTS |
DE19800949A1 (de) * | 1998-01-13 | 1999-07-15 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zum Trocknen eines Gegenstandes |
DE19800951A1 (de) * | 1998-01-13 | 1999-07-15 | Steag Micro Tech Gmbh | Vorrichtung zur Naßbehandlung von Substraten |
DE19802579A1 (de) * | 1998-01-23 | 1999-07-29 | Steag Micro Tech Gmbh | Vorrichtung und Verfahren zur Behandlung von Substraten |
KR100452542B1 (ko) | 1998-04-14 | 2004-10-12 | 가부시끼가이샤가이죠 | 세정물 건조장치 및 건조방법 |
US6047717A (en) * | 1998-04-29 | 2000-04-11 | Scd Mountain View, Inc. | Mandrel device and method for hard disks |
US6273100B1 (en) | 1998-08-27 | 2001-08-14 | Micron Technology, Inc. | Surface cleaning apparatus and method |
US6216709B1 (en) | 1998-09-04 | 2001-04-17 | Komag, Inc. | Method for drying a substrate |
US6571806B2 (en) | 1998-09-04 | 2003-06-03 | Komag, Inc. | Method for drying a substrate |
DE19859468C2 (de) * | 1998-12-22 | 2002-01-17 | Steag Micro Tech Gmbh | Vorrichtung zum Behandeln und Handhaben von Substraten |
US6328814B1 (en) | 1999-03-26 | 2001-12-11 | Applied Materials, Inc. | Apparatus for cleaning and drying substrates |
US6495215B1 (en) | 1999-05-26 | 2002-12-17 | Tokyo Electron Limited | Method and apparatus for processing substrate |
DE19924302A1 (de) * | 1999-05-27 | 2000-12-07 | Steag Micro Tech Gmbh | Vorrichtung und Verfahren zum Trocknen von Substraten |
US6192600B1 (en) * | 1999-09-09 | 2001-02-27 | Semitool, Inc. | Thermocapillary dryer |
US6355111B1 (en) | 1999-11-24 | 2002-03-12 | International Business Machines Corporation | Method for removing contaminants from a workpiece using a chemically reactive additive |
DE19960241A1 (de) * | 1999-12-14 | 2001-07-05 | Steag Micro Tech Gmbh | Vorrichtung und Verfahren zum Behandeln von Substraten |
US6293616B1 (en) * | 2000-01-10 | 2001-09-25 | Ford Global Technologies, Inc. | Modular rail for roof and windshield |
JP2001291698A (ja) * | 2000-04-10 | 2001-10-19 | Nec Corp | 処理装置および処理方法 |
US7364625B2 (en) * | 2000-05-30 | 2008-04-29 | Fsi International, Inc. | Rinsing processes and equipment |
EP1168422B1 (en) * | 2000-06-27 | 2009-12-16 | Imec | Method and apparatus for liquid-treating and drying a substrate |
US6508014B2 (en) | 2001-02-16 | 2003-01-21 | International Business Machines Corporation | Method of drying substrates |
DE10122669A1 (de) * | 2001-05-10 | 2002-12-12 | Mattson Wet Products Gmbh | Vorrichtung zum Nassreinigen von scheibenförmigen Substraten |
CN101414548B (zh) | 2001-11-02 | 2011-10-19 | 应用材料股份有限公司 | 单个晶片的干燥装置和干燥方法 |
US7513062B2 (en) * | 2001-11-02 | 2009-04-07 | Applied Materials, Inc. | Single wafer dryer and drying methods |
US20030136429A1 (en) * | 2002-01-22 | 2003-07-24 | Semitool, Inc. | Vapor cleaning and liquid rinsing process vessel |
DE10215283B4 (de) * | 2002-04-05 | 2004-06-03 | Astec Halbleitertechnologie Gmbh | Vorrichtung zur Aufnahme von Substraten |
US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
KR100480606B1 (ko) * | 2002-08-01 | 2005-04-06 | 삼성전자주식회사 | 아이피에이 증기 건조 방식을 이용한 반도체 웨이퍼 건조장치 |
US6875289B2 (en) * | 2002-09-13 | 2005-04-05 | Fsi International, Inc. | Semiconductor wafer cleaning systems and methods |
US20040129297A1 (en) * | 2003-01-03 | 2004-07-08 | Settlemyer Kenneth T. | Method and system for reducing effects of halfpitch wafer spacing during wet processes |
KR20050015411A (ko) * | 2003-08-05 | 2005-02-21 | 삼성전자주식회사 | 세정 장치 및 이를 이용한 세정 방법 |
US6977215B2 (en) * | 2003-10-28 | 2005-12-20 | Nec Electronics America, Inc. | Tungsten plug corrosion prevention method using gas sparged water |
DE10359320A1 (de) * | 2003-12-17 | 2005-07-21 | Scp Germany Gmbh | Vorrichtung und Verfahren zum Trocknen von Substraten |
JP2006080420A (ja) * | 2004-09-13 | 2006-03-23 | Ses Co Ltd | 基板処理法及び基板処理装置 |
DE102004058386B4 (de) * | 2004-12-03 | 2007-06-21 | Alfing Montagetechnik Gmbh | Vorrichtung und Verfahren zum Unterkühlen von Montageteilen |
DE102004060980A1 (de) * | 2004-12-17 | 2006-07-06 | Infineon Technologies Ag | Vorrichtung und Verfahren zur Trocknung von Substraten |
US8070884B2 (en) * | 2005-04-01 | 2011-12-06 | Fsi International, Inc. | Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance |
TWI364524B (en) * | 2005-05-13 | 2012-05-21 | Lam Res Ag | Method for drying a surface |
KR20080023264A (ko) * | 2005-06-28 | 2008-03-12 | 아사히 테크 가부시끼가이샤 | 표면 개질된 부재, 표면 처리 방법 및 표면 처리 장치 |
JP5043021B2 (ja) * | 2005-10-04 | 2012-10-10 | アプライド マテリアルズ インコーポレイテッド | 基板を乾燥するための方法及び装置 |
US8388762B2 (en) * | 2007-05-02 | 2013-03-05 | Lam Research Corporation | Substrate cleaning technique employing multi-phase solution |
US20110195579A1 (en) * | 2010-02-11 | 2011-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Scribe-line draining during wet-bench etch and clean processes |
US20120306139A1 (en) | 2011-06-03 | 2012-12-06 | Arthur Keigler | Parallel single substrate processing system holder |
US9293305B2 (en) * | 2011-10-31 | 2016-03-22 | Lam Research Corporation | Mixed acid cleaning assemblies |
DE102013102545A1 (de) | 2012-04-27 | 2013-10-31 | Awt Advanced Wet Technologies Gmbh | Verfahren zum Behandeln von zumindest einem Substrat in einem flüssigen Medium |
DE102014207266A1 (de) | 2014-04-15 | 2015-10-15 | Siltronic Ag | Verfahren zum Trocknen von scheibenförmigen Substraten undScheibenhalter zur Durchführung des Verfahrens |
JP6489524B2 (ja) * | 2015-08-18 | 2019-03-27 | 株式会社Screenホールディングス | 基板処理装置 |
JP7241568B2 (ja) * | 2019-03-04 | 2023-03-17 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
JP7281925B2 (ja) * | 2019-03-07 | 2023-05-26 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
CN110544654B (zh) * | 2019-08-27 | 2022-04-15 | 西安奕斯伟材料科技有限公司 | 一种硅片处理装置和处理方法 |
EP3840023B1 (en) | 2019-12-18 | 2022-10-19 | Siltronic AG | Improved device for drying semiconductor substrates |
EP3840021B1 (en) | 2019-12-18 | 2022-10-19 | Siltronic AG | Improved device for drying semiconductor substrates |
EP3840022B1 (en) | 2019-12-18 | 2022-10-05 | Siltronic AG | Improved device for drying semiconductor substrates |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4463774A (en) * | 1983-01-28 | 1984-08-07 | The Boeing Company | Fuselage-mounted valve for condensate drainage and cabin-air pressurization |
JPS60223130A (ja) * | 1984-04-19 | 1985-11-07 | Sharp Corp | 基板の洗滌乾燥方法及びその装置 |
JPH0673352B2 (ja) * | 1984-05-18 | 1994-09-14 | 松下電器産業株式会社 | 高圧ジェット洗浄方法 |
US4778532A (en) * | 1985-06-24 | 1988-10-18 | Cfm Technologies Limited Partnership | Process and apparatus for treating wafers with process fluids |
US4911761A (en) * | 1984-05-21 | 1990-03-27 | Cfm Technologies Research Associates | Process and apparatus for drying surfaces |
US4577650A (en) * | 1984-05-21 | 1986-03-25 | Mcconnell Christopher F | Vessel and system for treating wafers with fluids |
US4633893A (en) * | 1984-05-21 | 1987-01-06 | Cfm Technologies Limited Partnership | Apparatus for treating semiconductor wafers |
JPS6263422A (ja) * | 1985-09-13 | 1987-03-20 | Toshiba Ceramics Co Ltd | シリコンウエ−ハ処理用治具 |
US4746397A (en) * | 1986-01-17 | 1988-05-24 | Matsushita Electric Industrial Co., Ltd. | Treatment method for plate-shaped substrate |
US4722752A (en) * | 1986-06-16 | 1988-02-02 | Robert F. Orr | Apparatus and method for rinsing and drying silicon wafers |
JPH0789547B2 (ja) * | 1986-07-02 | 1995-09-27 | 松下電器産業株式会社 | 乾燥方法 |
JPS6315048U (zh) * | 1986-07-16 | 1988-02-01 | ||
JPS6327576A (ja) * | 1986-07-22 | 1988-02-05 | Toshiba Ceramics Co Ltd | 研磨プレ−ト用接着剤 |
NL8601939A (nl) * | 1986-07-28 | 1988-02-16 | Philips Nv | Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat. |
JPS6356921A (ja) * | 1986-08-28 | 1988-03-11 | Tokyo Ohka Kogyo Co Ltd | 基板の処理方法 |
JPH0695514B2 (ja) * | 1986-12-25 | 1994-11-24 | 株式会社トクヤマ | 乾燥方法 |
JPS63182818A (ja) * | 1987-01-26 | 1988-07-28 | Hitachi Ltd | 乾燥装置 |
US5105556A (en) * | 1987-08-12 | 1992-04-21 | Hitachi, Ltd. | Vapor washing process and apparatus |
US4828751A (en) * | 1987-08-28 | 1989-05-09 | Pcr, Inc. | Solvent composition for cleaning silicon wafers |
US4902350A (en) * | 1987-09-09 | 1990-02-20 | Robert F. Orr | Method for rinsing, cleaning and drying silicon wafers |
US5129955A (en) * | 1989-01-11 | 1992-07-14 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method |
NL8900480A (nl) * | 1989-02-27 | 1990-09-17 | Philips Nv | Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof. |
-
1989
- 1989-02-27 NL NL8900480A patent/NL8900480A/nl not_active Application Discontinuation
-
1990
- 1990-02-21 DE DE69012373T patent/DE69012373T2/de not_active Expired - Lifetime
- 1990-02-21 EP EP90200409A patent/EP0385536B1/en not_active Expired - Lifetime
- 1990-02-22 JP JP2042302A patent/JP3009699B2/ja not_active Expired - Lifetime
- 1990-02-23 KR KR1019900002291A patent/KR0173449B1/ko not_active IP Right Cessation
- 1990-02-24 CN CN90100958A patent/CN1023450C/zh not_active Expired - Lifetime
-
1992
- 1992-07-15 US US07/914,654 patent/US6012472A/en not_active Expired - Lifetime
-
1998
- 1998-07-30 US US09/126,621 patent/US6139645A/en not_active Expired - Fee Related
-
2000
- 2000-01-14 US US09/502,724 patent/US6170495B1/en not_active Expired - Fee Related
- 2000-11-13 US US09/711,231 patent/US6533872B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0385536B1 (en) | 1994-09-14 |
KR0173449B1 (ko) | 1999-04-01 |
NL8900480A (nl) | 1990-09-17 |
EP0385536A1 (en) | 1990-09-05 |
CN1045539A (zh) | 1990-09-26 |
US6139645A (en) | 2000-10-31 |
KR900013597A (ko) | 1990-09-06 |
DE69012373D1 (de) | 1994-10-20 |
US6012472A (en) | 2000-01-11 |
US6170495B1 (en) | 2001-01-09 |
JP3009699B2 (ja) | 2000-02-14 |
US6533872B1 (en) | 2003-03-18 |
JPH02291128A (ja) | 1990-11-30 |
DE69012373T2 (de) | 1995-04-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1023450C (zh) | 对经液体处理后的基片进行清洁干燥的方法和装置 | |
KR102031814B1 (ko) | 기판의 표면을 처리하기 위한 조성물, 방법 및 장치 | |
CN1279586C (zh) | 制造半导体器件的方法和用于清洗衬底的设备 | |
KR960013142B1 (ko) | 기판 표면의 바람직하지 않은 입자 제거 방법 | |
US5823210A (en) | Cleaning method and cleaning apparatus | |
EP0496899B1 (en) | Method for cleaning | |
US8828144B2 (en) | Process for cleaning wafers | |
US20090205677A1 (en) | Method and apparatus for wafer cleaning | |
CN1708362A (zh) | 光致抗蚀剂去除用超临界二氧化碳/化学制剂 | |
US9228120B2 (en) | Liquid chemical for forming protecting film | |
CN1708572A (zh) | 用于去除灰化和未灰化铝蚀刻后残留物的超临界二氧化碳化学制剂 | |
CN1250226A (zh) | 制造半导体器件的方法 | |
CN1902297A (zh) | 采用超临界流体/化学制剂去除mems牺牲层 | |
CN104091771A (zh) | 增强的晶片清洗方法 | |
CN1236977A (zh) | 半导体器件清洗装置和清洗半导体器件的方法 | |
EP0273628A1 (en) | Process for production of semiconductor devices | |
CN101154563A (zh) | 基板处理方法以及基板处理装置 | |
CN1628000A (zh) | 清洁微电子结构的方法 | |
US6401353B2 (en) | Substrate dryer | |
CN1638882A (zh) | 基片毛细干燥法 | |
CN1226998A (zh) | 用于半导体衬底的清洗水溶液 | |
KR0155305B1 (ko) | 웨이퍼 건조방법 | |
JPH056884A (ja) | シリコンウエハーの洗浄方法 | |
KR20080057087A (ko) | 웨이퍼 습식 세정 장비 및 이를 이용한 습식 세정 방법 | |
JPS60225635A (ja) | 成膜方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C53 | Correction of patent of invention or patent application | ||
COR | Change of bibliographic data |
Free format text: CORRECT: PATENTEE; FROM: N.V. PHILIPS OPTICAL LAMP MANUFACTURING COMPANY TO: N.V. PHILIPS OPTICALLAMP LTD., CO. |
|
CP01 | Change in the name or title of a patent holder |
Patentee after: Philips Electronics N. V. Patentee before: N.V. Philips' Gloeipenfabrieken |
|
C53 | Correction of patent of invention or patent application | ||
COR | Change of bibliographic data |
Free format text: CORRECT: PATENTEE; FROM: N.V. PHILIPS OPTICAL LAMP LTD., CO. TO: ROYAL PHILIPS ELECTRONICS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Patentee after: Koninklike Philips Electronics N. V. Patentee before: Philips Electronics N. V. |
|
C15 | Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993) | ||
OR01 | Other related matters | ||
C56 | Change in the name or address of the patentee |
Owner name: NXP CO., LTD. Free format text: FORMER NAME OR ADDRESS: ROYAL PHILIPS ELECTRONICS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Holland Ian Deho Finn Patentee after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Patentee before: Koninklike Philips Electronics N. V. |
|
C17 | Cessation of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 19940112 |