NL192155C - Datatransmissieketen. - Google Patents
Datatransmissieketen. Download PDFInfo
- Publication number
- NL192155C NL192155C NL8801541A NL8801541A NL192155C NL 192155 C NL192155 C NL 192155C NL 8801541 A NL8801541 A NL 8801541A NL 8801541 A NL8801541 A NL 8801541A NL 192155 C NL192155 C NL 192155C
- Authority
- NL
- Netherlands
- Prior art keywords
- line
- data
- lines
- clock signal
- transistor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019870006287A KR900006293B1 (ko) | 1987-06-20 | 1987-06-20 | 씨모오스 디램의 데이터 전송회로 |
| KR870006287 | 1987-06-20 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL8801541A NL8801541A (nl) | 1989-01-16 |
| NL192155B NL192155B (nl) | 1996-10-01 |
| NL192155C true NL192155C (nl) | 1997-02-04 |
Family
ID=19262251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8801541A NL192155C (nl) | 1987-06-20 | 1988-06-16 | Datatransmissieketen. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5153459A (ja) |
| JP (1) | JPS6419588A (ja) |
| KR (1) | KR900006293B1 (ja) |
| DE (1) | DE3820800A1 (ja) |
| FR (1) | FR2616934B1 (ja) |
| NL (1) | NL192155C (ja) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920001082B1 (ko) * | 1989-06-13 | 1992-02-01 | 삼성전자 주식회사 | 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로 |
| JP2545481B2 (ja) * | 1990-03-09 | 1996-10-16 | 富士通株式会社 | 半導体記憶装置 |
| JP2745251B2 (ja) * | 1991-06-12 | 1998-04-28 | 三菱電機株式会社 | 半導体メモリ装置 |
| US5243572A (en) * | 1992-01-15 | 1993-09-07 | Motorola, Inc. | Deselect circuit |
| KR930020442A (ko) * | 1992-03-13 | 1993-10-19 | 김광호 | 데이타의 고속 액세스가 이루어지는 비트라인 제어회로 |
| US5682110A (en) * | 1992-03-23 | 1997-10-28 | Texas Instruments Incorporated | Low capacitance bus driver |
| US6028796A (en) * | 1992-04-02 | 2000-02-22 | Sony Corporation | Read-out circuit for semiconductor memory device |
| US5289415A (en) * | 1992-04-17 | 1994-02-22 | Motorola, Inc. | Sense amplifier and latching circuit for an SRAM |
| KR0127263B1 (ko) * | 1993-02-23 | 1997-12-29 | 사토 후미오 | 반도체 집적회로 |
| DE69426845T2 (de) * | 1993-06-30 | 2001-09-13 | St Microelectronics Inc | Verfahren und Einrichtung zur Parallelprüfung von Speichern |
| US5721875A (en) * | 1993-11-12 | 1998-02-24 | Intel Corporation | I/O transceiver having a pulsed latch receiver circuit |
| JP4197755B2 (ja) | 1997-11-19 | 2008-12-17 | 富士通株式会社 | 信号伝送システム、該信号伝送システムのレシーバ回路、および、該信号伝送システムが適用される半導体記憶装置 |
| US6347350B1 (en) | 1998-12-22 | 2002-02-12 | Intel Corporation | Driving the last inbound signal on a line in a bus with a termination |
| US6738844B2 (en) * | 1998-12-23 | 2004-05-18 | Intel Corporation | Implementing termination with a default signal on a bus line |
| US7269212B1 (en) | 2000-09-05 | 2007-09-11 | Rambus Inc. | Low-latency equalization in multi-level, multi-line communication systems |
| US7161513B2 (en) | 1999-10-19 | 2007-01-09 | Rambus Inc. | Apparatus and method for improving resolution of a current mode driver |
| US7124221B1 (en) | 1999-10-19 | 2006-10-17 | Rambus Inc. | Low latency multi-level communication interface |
| US6396329B1 (en) | 1999-10-19 | 2002-05-28 | Rambus, Inc | Method and apparatus for receiving high speed signals with low latency |
| US6603817B1 (en) * | 2000-03-21 | 2003-08-05 | Mitsubisihi Denki Kabushiki Kaisha | Buffer circuit capable of correctly transferring small amplitude signal in synchronization with high speed clock signal |
| US8861667B1 (en) | 2002-07-12 | 2014-10-14 | Rambus Inc. | Clock data recovery circuit with equalizer clock calibration |
| US7362800B1 (en) | 2002-07-12 | 2008-04-22 | Rambus Inc. | Auto-configured equalizer |
| US7292629B2 (en) * | 2002-07-12 | 2007-11-06 | Rambus Inc. | Selectable-tap equalizer |
| US7903477B2 (en) | 2008-02-29 | 2011-03-08 | Mosaid Technologies Incorporated | Pre-charge voltage generation and power saving modes |
| CN114255793A (zh) | 2020-11-20 | 2022-03-29 | 台湾积体电路制造股份有限公司 | 存储器器件的写入电路 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS592996B2 (ja) * | 1976-05-24 | 1984-01-21 | 株式会社日立製作所 | 半導体記憶回路 |
| US4202045A (en) * | 1979-03-05 | 1980-05-06 | Motorola, Inc. | Write circuit for a read/write memory |
| JPS595989B2 (ja) * | 1980-02-16 | 1984-02-08 | 富士通株式会社 | スタティック型ランダムアクセスメモリ |
| JPS5851354B2 (ja) * | 1980-10-15 | 1983-11-16 | 富士通株式会社 | 半導体記憶装置 |
| JPS57127989A (en) * | 1981-02-02 | 1982-08-09 | Hitachi Ltd | Mos static type ram |
| JPS58203694A (ja) * | 1982-05-21 | 1983-11-28 | Nec Corp | メモリ回路 |
| JPS6142795A (ja) * | 1984-08-03 | 1986-03-01 | Toshiba Corp | 半導体記憶装置の行デコ−ダ系 |
| US4665508A (en) * | 1985-05-23 | 1987-05-12 | Texas Instruments Incorporated | Gallium arsenide MESFET memory |
| US4686396A (en) * | 1985-08-26 | 1987-08-11 | Xerox Corporation | Minimum delay high speed bus driver |
| JPS62165785A (ja) * | 1986-01-17 | 1987-07-22 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US4763303A (en) * | 1986-02-24 | 1988-08-09 | Motorola, Inc. | Write-drive data controller |
| KR890003488B1 (ko) * | 1986-06-30 | 1989-09-22 | 삼성전자 주식회사 | 데이터 전송회로 |
| JPH0831275B2 (ja) * | 1986-09-09 | 1996-03-27 | 日本電気株式会社 | メモリ回路 |
-
1987
- 1987-06-20 KR KR1019870006287A patent/KR900006293B1/ko not_active IP Right Cessation
-
1988
- 1988-06-15 US US07/206,824 patent/US5153459A/en not_active Expired - Lifetime
- 1988-06-16 NL NL8801541A patent/NL192155C/nl not_active IP Right Cessation
- 1988-06-16 JP JP63147051A patent/JPS6419588A/ja active Granted
- 1988-06-17 FR FR8808134A patent/FR2616934B1/fr not_active Expired - Lifetime
- 1988-06-20 DE DE3820800A patent/DE3820800A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| KR890001304A (ko) | 1989-03-20 |
| FR2616934B1 (fr) | 1993-07-02 |
| NL8801541A (nl) | 1989-01-16 |
| JPH0583999B2 (ja) | 1993-11-30 |
| US5153459A (en) | 1992-10-06 |
| DE3820800A1 (de) | 1988-12-29 |
| NL192155B (nl) | 1996-10-01 |
| FR2616934A1 (fr) | 1988-12-23 |
| JPS6419588A (en) | 1989-01-23 |
| KR900006293B1 (ko) | 1990-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: SAMSUNG ELECTRONICS CO., LTD. |
|
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| V4 | Discontinued because of reaching the maximum lifetime of a patent |
Effective date: 20080616 |