NL185251B - Halfgeleiderlichtbron. - Google Patents

Halfgeleiderlichtbron.

Info

Publication number
NL185251B
NL185251B NLAANVRAGE7607677,A NL7607677A NL185251B NL 185251 B NL185251 B NL 185251B NL 7607677 A NL7607677 A NL 7607677A NL 185251 B NL185251 B NL 185251B
Authority
NL
Netherlands
Prior art keywords
light source
semiconductor light
semiconductor
source
light
Prior art date
Application number
NLAANVRAGE7607677,A
Other languages
English (en)
Other versions
NL185251C (nl
NL7607677A (nl
Original Assignee
Post Office
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Post Office filed Critical Post Office
Publication of NL7607677A publication Critical patent/NL7607677A/nl
Publication of NL185251B publication Critical patent/NL185251B/nl
Application granted granted Critical
Publication of NL185251C publication Critical patent/NL185251C/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
NLAANVRAGE7607677,A 1975-07-16 1976-07-12 Halfgeleiderlichtbron. NL185251C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB29810/75A GB1517537A (en) 1975-07-16 1975-07-16 Lasers and photo-detectors

Publications (3)

Publication Number Publication Date
NL7607677A NL7607677A (nl) 1977-01-18
NL185251B true NL185251B (nl) 1989-09-18
NL185251C NL185251C (nl) 1990-02-16

Family

ID=10297543

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7607677,A NL185251C (nl) 1975-07-16 1976-07-12 Halfgeleiderlichtbron.

Country Status (6)

Country Link
JP (2) JPS5214393A (nl)
CA (1) CA1076237A (nl)
DE (1) DE2632222A1 (nl)
FR (1) FR2318505A1 (nl)
GB (1) GB1517537A (nl)
NL (1) NL185251C (nl)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2903554C2 (de) * 1979-01-31 1983-11-17 Telefonbau Und Normalzeit Gmbh, 6000 Frankfurt Opto-Koppler zur opto-elektronischen Signalübertragung
US4349906A (en) * 1979-09-18 1982-09-14 Xerox Corporation Optically controlled integrated current diode lasers
JPS5789289A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor device
JPS57139984A (en) * 1981-02-24 1982-08-30 Nec Corp Buried photo emitting and receiving semiconductor integrated device
JPS5875879A (ja) * 1981-10-29 1983-05-07 Nec Corp 光集積化素子
JPS5884486A (ja) * 1981-11-13 1983-05-20 Nec Corp 半導体レ−ザ・フオトデイテクタ光集積化素子
JPS5880887A (ja) * 1981-11-09 1983-05-16 Nec Corp 半導体レ−ザ・フオトダイオ−ド光集積化素子
JPS5871676A (ja) * 1981-10-23 1983-04-28 Nec Corp 埋め込みへテロ構造半導体レ−ザ・フオトダイオ−ド光集積化素子
JPS5875877A (ja) * 1981-10-30 1983-05-07 Nec Corp モニタ内蔵半導体レ−ザ素子
JPS58162090A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
JPS58186986A (ja) * 1982-04-27 1983-11-01 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1007876A (en) * 1963-08-15 1965-10-22 Mullard Ltd Improvements in and relating to opto-electronic semiconductor devices
GB1100682A (en) * 1963-09-26 1968-01-24 Mullard Ltd Improvements in opto-electronic semiconductor devices
DE1190506B (de) * 1963-10-10 1965-04-08 Siemens Ag Optisch gesteuerte, mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp aufweisende Schalt- oder Kippdiode
FR1464724A (fr) * 1964-11-07 1967-01-06 Ibm Dispositif semi-conducteur photoélectrique
JPS5081695A (nl) * 1973-11-21 1975-07-02

Also Published As

Publication number Publication date
GB1517537A (en) 1978-07-12
CA1076237A (en) 1980-04-22
NL185251C (nl) 1990-02-16
DE2632222A1 (de) 1977-03-03
FR2318505A1 (fr) 1977-02-11
JPS5214393A (en) 1977-02-03
NL7607677A (nl) 1977-01-18
JPS60149156U (ja) 1985-10-03
FR2318505B1 (nl) 1982-10-08

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
SNR Assignments of patents or rights arising from examined patent applications

Owner name: BRITISH TELECOMMUNICATIONS PLC

SNR Assignments of patents or rights arising from examined patent applications

Owner name: BRITISH TELECOMMUNICATIONS PLC

V1 Lapsed because of non-payment of the annual fee

Effective date: 19960201