GB1100682A - Improvements in opto-electronic semiconductor devices - Google Patents
Improvements in opto-electronic semiconductor devicesInfo
- Publication number
- GB1100682A GB1100682A GB3794763A GB3794763A GB1100682A GB 1100682 A GB1100682 A GB 1100682A GB 3794763 A GB3794763 A GB 3794763A GB 3794763 A GB3794763 A GB 3794763A GB 1100682 A GB1100682 A GB 1100682A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- layers
- wafer
- layer
- alloyed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000010410 layer Substances 0.000 abstract 16
- 235000012431 wafers Nutrition 0.000 abstract 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 4
- 239000008188 pellet Substances 0.000 abstract 4
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 229910052714 tellurium Inorganic materials 0.000 abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- 229910000925 Cd alloy Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 229910001260 Pt alloy Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- YAMPQRWRFJYHJN-UHFFFAOYSA-N [Cd].[Bi] Chemical compound [Cd].[Bi] YAMPQRWRFJYHJN-UHFFFAOYSA-N 0.000 abstract 1
- PRAZETMPVAHKHH-UHFFFAOYSA-N [Pt].[Sn].[Bi] Chemical compound [Pt].[Sn].[Bi] PRAZETMPVAHKHH-UHFFFAOYSA-N 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- CCXYPVYRAOXCHB-UHFFFAOYSA-N bismuth silver Chemical compound [Ag].[Bi] CCXYPVYRAOXCHB-UHFFFAOYSA-N 0.000 abstract 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000004922 lacquer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
1,100,682. Semi-conductor devices. MULLARD Ltd. 6 Aug., 1964 [26 Sept., 1963], No. 37947/63. Heading HIK. In an opto-electronic semi-conductor device comprising four layers of alternate conductivity types, the junction between the first and second layers emits photons when forwardly biased and the minimum separation between this junction and the junction between the second and third layers is greater than a minority carrier diffusion length. As shown, Fig. 5, a wafer 11 of N-type GaAs doped with tellurium, has P-type surface layers 12, 13 produced by diffusing-in zinc. The thickness of layer 12 is reduced by etching and part of the new surface is masked and the exposed part of layer 12 is removed. Layer 13 is also reduced in thickness by etching, and pellets 14, 16 of bismuth-tin-platinum alloy are alloyed to regions 13 and 11 to form a rectifying and an ohmic connection respectively. A pellet 16 of bismuth-cadmium alloy is alloyed to region 12 to form an ohmic contact. A reflective coating 17 of aluminium is applied over contact 16 and layer 12, leads are attached to the alloyed contacts and the device is encapsulated. Layers 12, 11, 13 act as an opto-electronic transistor in which recombination radiation emitted by the forward biased junction between layers 11 and 12 produces electron-hole pairs at the reverse biased junction between layers 11 and 13. Layers 14, 13, 11 act as a junction transistor and if the sum of the current amplification factors of the two " transistors " exceeds unity the complete device operates as a high speed switch controlled by gate contact 15. In a second embodiment, Fig. 8, an N-type wafer of GaAs doped with tellurium and having P-type surface layers produced by vapour diffusion of zinc is attached to a glass plate using dental wax and the exposed P-type layer removed by grinding and etching. The wafer is reversed on the plate and the remaining P-type layer is reduced in thickness using the same method. The wafer is then divided into a plurality of wafers 22 and an annular cavity 24 is ultrasonically drilled through the P-type layer 23 of each wafer. A pellet 25 of bismuthtin alloy is alloyed to the wafer to form a rectifying contact and a ring 26 of bismuthsilver alloy and a pellet 27 of bismuth-tinplatinum alloy are alloyed to the wafer to form ohmic contacts. A silicon oxide layer 29 and a reflective layer 30 of aluminium are applied to the edges of the wafer. Leads are connected and the device encapsulated, cavity 24 being filled with a transparent lacquer through which the light emitted from the outer annular junction can pass to the co-planar inner junction. This device operates as in the first embodiment. The light receiving junction may also be a heterojunction, the material of the third region having a lower energy gap than that of the second region to decrease the photon absorption length. Suitable pairs of materials are gallium arsenide/gallium-indium arsenide and gallium arseno-phosphide/gallium arsenide. In a preferred embodiment the first and second regions are of the first material and the third and fourth regions are of the second material. Reference has been directed by the Comptroller to Specification 967,439.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3794763A GB1100682A (en) | 1963-09-26 | 1963-09-26 | Improvements in opto-electronic semiconductor devices |
| NL6410883A NL6410883A (en) | 1963-09-26 | 1964-09-18 | |
| CH1233664A CH440479A (en) | 1963-09-26 | 1964-09-23 | Semiconductor device |
| SE11453/64A SE316835B (en) | 1963-09-26 | 1964-09-23 | |
| BE653530A BE653530A (en) | 1963-09-26 | 1964-09-24 | |
| DE19641489181 DE1489181A1 (en) | 1963-09-26 | 1964-09-25 | Semiconductor device |
| FR989487A FR1409138A (en) | 1963-09-26 | 1964-09-26 | Semiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3794763A GB1100682A (en) | 1963-09-26 | 1963-09-26 | Improvements in opto-electronic semiconductor devices |
| GB4755463 | 1963-12-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1100682A true GB1100682A (en) | 1968-01-24 |
Family
ID=26263643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3794763A Expired GB1100682A (en) | 1963-09-26 | 1963-09-26 | Improvements in opto-electronic semiconductor devices |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE653530A (en) |
| CH (1) | CH440479A (en) |
| DE (1) | DE1489181A1 (en) |
| GB (1) | GB1100682A (en) |
| NL (1) | NL6410883A (en) |
| SE (1) | SE316835B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1517537A (en) * | 1975-07-16 | 1978-07-12 | Post Office | Lasers and photo-detectors |
-
1963
- 1963-09-26 GB GB3794763A patent/GB1100682A/en not_active Expired
-
1964
- 1964-09-18 NL NL6410883A patent/NL6410883A/xx unknown
- 1964-09-23 SE SE11453/64A patent/SE316835B/xx unknown
- 1964-09-23 CH CH1233664A patent/CH440479A/en unknown
- 1964-09-24 BE BE653530A patent/BE653530A/xx unknown
- 1964-09-25 DE DE19641489181 patent/DE1489181A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL6410883A (en) | 1965-03-29 |
| CH440479A (en) | 1967-07-31 |
| DE1489181A1 (en) | 1969-05-14 |
| BE653530A (en) | 1965-03-24 |
| SE316835B (en) | 1969-11-03 |
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